KR20120117411A

KR20120117411A - Cooling device and method of manufacturing thereof

Info

Publication number: KR20120117411A
Application number: KR1020110035153A
Authority: KR
Inventors: 최은수
Original assignee: 삼성테크윈 주식회사
Priority date: 2011-04-15
Filing date: 2011-04-15
Publication date: 2012-10-24

Abstract

PURPOSE: A cooling device is provided to apply a photo lithography process to a silicon wafer, thereby appropriating mass production. CONSTITUTION: A first plate(100) includes a first space(110) for acceptance of a refrigerant. One or more second plates(200) are laminated to an upper side of the first plate for covering the first space. A first penetration hole(210) is connected to one side of the first space. A second penetration hole(220) is connected to other side of the first space. The first penetration hole and the second penetration hole are formed in one or more the second plates. A third plate(300) is arranged in the upper side of the second plates. A second space(310) for connecting the first penetration hole and the second penetration hole is formed in the third plate.

Description

Cooling device and method for manufacturing thereof

The present invention relates to a cooling device for cooling an electronic component.

Heat pipes for cooling electronic components such as central processing units or memories are widely used.

Such a heat pipe accommodates a refrigerant therein, and cools the electronic component by absorbing heat of the electronic component while the refrigerant evaporates. The evaporated refrigerant condenses while releasing the absorbed heat to the outside and returns to the position where the heat of the electronic component is absorbed. That is, the heat pipe effectively discharges heat of the electronic component to the outside while the refrigerant inside the evaporation and condensation repeat.

Such heat pipes generally have disadvantages in that the size of the pipe and the volume of the condensor are larger than those of components to be dissipated. Therefore, when the component to be radiated is small, an additional device for fixing the heat pipe to the periphery of the component may be additionally required.

In order to solve the above problems, some aspects of the present invention, which is advantageous for miniaturization, is an object of the present invention to provide a cooling device and a method of manufacturing the same suitable for mass production.

In order to achieve the above object, a cooling apparatus according to an embodiment of the present invention, the first plate formed with a first space for containing a coolant, and laminated on the upper side of the first plate to cover the first space And at least one second plate having a first through hole connected to one side of the first space and a second through hole connected to the other side of the first space, and disposed on an upper side of the second plate. And a third plate having a second space for connecting the second through hole.

In addition, in order to achieve the above object, a manufacturing method of a cooling apparatus according to another embodiment of the present invention, preparing a first plate having a first space for containing a refrigerant, and when laminated on the first plate Preparing at least one second plate having at least one first through hole which may be connected to one side of the first space and at least one second through hole which may be connected to the other side of the first space; Preparing a third plate having a second space in which the at least one first through hole and the at least one second through hole are connected to each other when disposed above the second plate; Stacking and joining the at least one second plate and the third plate in sequence.

The cooling device according to some embodiments of the present invention is advantageous for miniaturization and is suitable for mass production. In addition, according to the cooling apparatus manufacturing method according to another embodiment of the present invention, it is possible to easily manufacture the cooling apparatus.

1 is a schematic perspective view of a cooling apparatus according to an embodiment of the present invention.
2 is a cross-sectional view taken along the line II-II of the cooling device of FIG.
3 is a cross-sectional view taken along line III-III of the cooling device of FIG.
4 is a view schematically showing an operating state of the cooling device of FIG. 1.
5 is a view schematically showing another operating state of the cooling device of FIG. 1.
6 is a flowchart schematically illustrating a method of manufacturing a cooling device according to another embodiment of the present invention.
7 to 13 are views for explaining a manufacturing process of the cooling device of FIG.
14 to 15 are views for explaining another manufacturing process of the cooling device of FIG.
16 is a schematic cross-sectional view of a cooling apparatus according to another embodiment of the present invention.

Hereinafter, a cooling apparatus according to an embodiment of the present invention will be described with reference to the drawings.

1 is a schematic perspective view of a cooling apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line II-II of the cooling apparatus of FIG. 1, and FIG. 3 is III-III of the cooling apparatus of FIG. 1. A cross section taken along the line.

1 to 3, the cooling device 1 of the present embodiment includes a first plate 100, a plurality of second plates 200, a third plate 300, and a fourth plate 400. The refrigerant C is accommodated therein.

The first plate 100 is in contact with the electronic component to be radiated, and may be formed of a metal material having high thermal conductivity, such as copper, aluminum, and silicon. Hereinafter, the first plate 100 will be described, for example, as being manufactured by etching a silicon wafer.

Since the first plate 100 is manufactured by etching a silicon wafer, its overall thickness corresponds to a typical silicon wafer thickness. Since the thickness of the silicon wafer is generally about 0.5 to 1 millimeter, the thickness of the thickest portion of the first plate 100 is about the same. Hereinafter, the first plate 100 will be manufactured using a silicon wafer having a thickness of about 750 micrometers, for example.

The first plate 110 is formed in the first plate 100 is open upward. The first space 110 is a space that can contain the refrigerant (C) may be formed to a depth of about 200 to 500 micrometers. As a method for forming the first space 110 in the first plate 100, a photolithography process widely used in a semiconductor manufacturing process may be used.

A hole for injecting the refrigerant C may be formed below the first plate 100, and the hole may be sealed with sealing materials 152 and 154 made of a material such as epoxy.

A plurality of second plates 200 are disposed above the first plate 100. Since the second plate 200 is also made from a silicon wafer, it has a thickness of about 750 micrometers, similar to a silicon wafer.

A plurality of first through holes 210 and a plurality of second through holes 220 are formed in each of the second plates 200a, 200b, and 200c.

The first through hole 210 is located at one side of the second plate 200 and is arranged in a direction perpendicular to the longitudinal direction of the second plate 200. The first through hole 210 is connected to one side of the first space 110 when the second plate 200 is coupled to the upper side of the first plate 100.

The second through hole 220 is located on the other side of the second plate 200, that is, on the opposite side where the first through hole 210 is located in the second plate 200, and in the longitudinal direction of the second plate 200. It is arranged in a vertical direction. The second through hole 220 is connected to the other side of the first space 110 when the second plate 200 is coupled to the upper side of the first plate 100.

When the plurality of second plates 200 are stacked, the first through holes 210 and the second through holes 220 of the second plates 200a, 200b and 200c communicate with each other and extend upward.

The first through hole 210 and the second through hole 220 of each second plate 200 may be formed by an etching process in a photolithography process.

The third plate 300 is coupled to the upper side of the second plate 200c of the uppermost layer. Since the third plate 300 is also made from a silicon wafer, the thickness of the thickest portion has a thickness of about 750 micrometers, similar to the thickness of the silicon wafer.

On the upper side of the third plate 300, a plurality of grooves 326 formed to extend in a direction from the first through hole 210 to the second through hole 220 of the second plate 200 may be formed by etching. Can be. The plurality of grooves 326 form a plurality of second spaces 310 extending upwards, and the plurality of second spaces 310 serve as flow paths through which the vaporized refrigerant C flows. The vaporized refrigerant C is condensed while passing through the second space 310 to release heat to the outside.

A bottom portion 320 is disposed below the second space 310, and a plurality of third through holes 322 and a plurality of fourth through holes 324 are formed in the bottom portion 320.

The third through hole 322 may be connected to the first through hole 210 of the second plates 200 located below the plurality of third through holes 322 at a position corresponding to the first through hole 210 of the second plate 200. It is formed as a dog. Therefore, the first space 110 is connected to the second space 310 through the first through hole 210 and the third through hole 322.

The fourth through hole 324 may be connected to the second through hole 220 of the second plate 200 positioned below the plurality of fourth through holes 324 at a position corresponding to the first through hole 210 of the second plate 200. It is formed as a dog. Therefore, the first space 110 is also connected to the second space 310 through the second through hole 220 and the fourth through hole 324.

The third through hole 322 and the fourth through hole 324 of the third plate 300 may also be formed by a photolithography process.

The fourth plate 400 is coupled to the upper side of the third plate 300 to cover and seal the second space 310 of the third plate 300. The fourth plate 400 may be made of a transparent glass material, for example, Pyrex glass having chemical heat resistance and similar thermal expansion coefficient to that of a silicon wafer. Therefore, it is possible to visually observe the refrigerant C flowing through the fourth plate 400 and the bonding state with the third plate 300 and the second space 310 between the two plates.

Next, the operation mode of the cooling apparatus 1 which concerns on a present Example is demonstrated with reference to drawings.

Fig. 4 schematically shows the arrangement of the cooling device of this embodiment on an electronic component.

In order to cool the cooling of the electronic component I such as an integrated circuit, the cooling device 1 according to the present embodiment is coupled to the upper side of the electronic component I. Since the first to third plates 100, 200, and 300 of the cooling apparatus 1 according to the present exemplary embodiment may be manufactured by applying a photolithography process to a silicon wafer, the electronic apparatus may be miniaturized as in an electronic component. Therefore, since the cooling device 1 of the present embodiment can be miniaturized correspondingly even when the size of the electronic component I to be cooled is small, the cooling device 1 is mounted on the substrate S on which the electronic component I is mounted. There is no need for a separate fixing device for fixing.

On the other hand, since the electronic component I, such as an integrated circuit, is often not symmetrically designed, the heat generating portion H is often positioned to one side as shown in FIG. 4. As such, when the heat generating part H is biased to one side, the refrigerant C adjacent to the heat generating part H is evaporated to rise through the first through hole 210. The elevated refrigerant C condenses in the second space 310 and emits heat to the outside. The condensed refrigerant C flows back into the first space 110 through the second through hole 220. In this way, the refrigerant C accommodated in the cooling device 1 of the present embodiment effectively releases heat of the electronic component I to the outside atmosphere while repeating evaporation and condensation.

FIG. 5 schematically illustrates a method of using the cooling apparatus according to the present embodiment when the heat generating portion of the electronic component is located at the center.

As shown in FIG. 5, the heat generating part H of the electronic component I may be located at the center. In this case, in order to circulate the refrigerant C in one direction, the temperature of the cooling device 1 of the present embodiment may be reduced. The imbalance of must occur. As a method for forming the temperature imbalance of the cooling device 1 of the present embodiment, there is a method of arranging the heat dissipation member 500 only on one side of the cooling device, as shown in FIG. As such, when the heat dissipation member 500 is disposed asymmetrically, the cooling device 1 has an asymmetrical temperature distribution, so that the contained refrigerant C may circulate only in one direction.

Next, the manufacturing method of the cooling apparatus 1 demonstrated above is demonstrated with reference to drawings.

6 is a flowchart schematically illustrating a method of manufacturing the cooling device of FIG. 1, and FIGS. 7 to 13 are schematic views illustrating a manufacturing process of the cooling device of FIG. 1.

Referring to FIG. 6, the method of manufacturing the cooling apparatus 1 according to the present embodiment includes preparing a silicon wafer (S10), forming a first plate 100 (S20), and a second plate 200. Forming step (S30), forming a third plate 300 (S40) and the first to fourth plates 400 and the step of stacking and bonding (S60).

A step S10 of preparing a silicon wafer is a step of manufacturing a silicon wafer W by cutting a silicon ingot. Since the process of manufacturing the silicon wafer (W) is widely used in a conventional semiconductor manufacturing process, a detailed description thereof will be omitted.

Forming the first plate 100 (S20) is a step of forming the first plate 100 from the silicon wafer W through a photolithography process.

FIG. 7 is a diagram schematically illustrating coating of photoresist (PR) having etching resistance to form the first space 110 of the first plate 100.

As shown in FIG. 7, the portion corresponding to the first plate 100 of the photoresist PR is removed through an exposure process or the like. Subsequently, when the etching process is performed, a first space 110 may be formed in the first plate 100 as shown in FIG. 8. The etching process may be either dry etching or wet etching. In the first plate 100, holes for injecting the coolant C may also be formed in advance through an etching process.

Since the area of the first plate 100 may be smaller than that of the silicon wafer W, a plurality of first plates 100 may be formed from one silicon wafer W. That is, the plurality of first plates 100 may be formed by forming a plurality of first spaces 110 in one silicon wafer W and then performing a wafer dicing process of cutting the plurality of first spaces 110 into the plurality of first plates 100. I can make it.

The step S30 of forming the second plate 200 is a step of forming the second plate 200 from the silicon wafer W through a photolithography process. As shown in FIG. 9, the photoresist PR is coated on both surfaces of the silicon wafer W, and the first through hole 210 of the photoresist PR is coated on the upper and lower surfaces of the silicon wafer W, and The portion corresponding to the second through hole 220 is removed by an exposure process. Next, when the etching process is performed, portions corresponding to the first through hole 210 and the second through hole 220 of the silicon wafer W are etched from both sides, so that the first through hole ( 210 and the second through hole 220 is formed. When the photoresist PR is removed, the second plate 200 is completed. Like the first plate 100, a plurality of second plates 200 may be manufactured from a single silicon wafer (W).

The step S40 of forming the third plate 300 is a step of forming the third plate 300 from the silicon wafer W through a photolithography process. As shown in FIG. 11, after the photoresist PR is coated on both surfaces of the silicon wafer, the third through hole 322, the fourth through hole 324 and the groove ( 326) is removed. When the etching process is performed and the remaining photoresist PR is removed, the third plate having the third through hole 322, the fourth through hole 324, and the plurality of grooves 326 is formed as shown in FIG. 12. 300 is formed. Like the first and second plates 100 and 200, a plurality of third plates 300 may be manufactured from one silicon wafer W.

On the other hand, the fourth plate 400 is prepared in a shape corresponding to the third plate 300 to cover the third plate 300, the third plate 300 is produced by cutting a large plate-like glass material Can be.

The stacking and bonding of the first to fourth plates 100, 200, 300, and 400 (S60) is a step of laminating and anodic bonding the first to fourth plates 400 in sequence.

FIG. 13 illustrates a process of sequentially stacking and bonding the first to fourth plates 100, 200, 300, and 400.

As shown in FIG. 13, when the second plate 200a contacts the upper side of the first plate 100, the first plate 100 and the second plate 200a are coupled to each other by performing anodic bonding. The anodic bonding may be performed by pressing the first plate 100 and the second plate 200a in contact with each other and applying a strong electric field to the contact portion. By using the positive electrode bonding as described above, the first plate 100 and the second plate 200 can be uniformly bonded without using a separate adhesive material. Therefore, the outflow of the refrigerant C between the first plate 100 and the second plate 200a may be more effectively prevented.

When the bonding between the first plate 100 and the second plate 200 is completed, the other second plates 200b and 200c are stacked thereon, and the anode bonding is performed in turn. By repeating this process to the third plate 300 and the fourth plate 400, the third plate 300 and the fourth plate 400 may also be sequentially joined. In this case, the fourth plate 400 is formed of a glass material instead of the silicon wafer W, but since the glass material includes silicon elements, the fourth plate 400 may also be anode-bonded to the third plate 300.

When the space for accommodating the refrigerant C is sealed by joining the first to fourth plates 100, 200, 300, and 400, the cooling device according to the present embodiment uses the refrigerant C through the refrigerant injection holes formed in the first plate 100. It can be injected into the inside of (1). When the injection of the refrigerant C is completed, the refrigerant injection hole formed in the first plate 100 is sealed with epoxy or the like.

As described above, since the cooling device 1 of the present embodiment combines the first to fourth plates 100, 200, 300, and 400 by an anodic bonding, there is no need to use an adhesive and has excellent advantages in terms of sealing properties.

Meanwhile, in the above, the first through hole 210 and the second through hole 220 are formed in each of the second plates 200, and then, the second plate 200 is laminated. However, the second plate 200 is laminated and the positive electrode. After joining, the first through hole 210 and the second through hole 220 may be formed at the same time.

14 and 15 illustrate a first through hole 210 and a second through hole 220 after laminating and bonding the second plate 200. First, as shown in FIG. 14, a plurality of second plates 200 are stacked and bonded by an anode junction. Then, the photoresist PR is applied to both surfaces of the bonded second plate 200, and the first through hole 210 and the second through hole 220 of the second plate 200 of the photoresist PR are applied. Remove the part corresponding to. Then, when the etching process is performed, the first through hole 210 and the second through hole 220 may be simultaneously removed from the second plate 200 as shown in FIG. 15.

The cooling device 1 of the present embodiment may be manufactured by joining the second plate 200 formed as described above with the first plate 100, the third plate 300, and the fourth plate 400.

The cooling apparatus 1 and the manufacturing method thereof having the first to fourth plates 100, 200, 300, and 400 are described as some embodiments of the present disclosure, but the cooling apparatus according to the present invention may be configured differently. Hereinafter, a cooling device having no fourth plate 400 will be described with reference to the drawings.

16 is a schematic cross-sectional view of a cooling apparatus according to another embodiment of the present invention.

Referring to FIG. 16, the cooling device 2 according to another embodiment of the present invention is different from the cooling device 1 of FIG. 1 without the fourth plate 400, and the first plate 100 and the second plate 200. ), And only the third plate 300 '. Since the first plate 100 and the second plate 200 are substantially the same as those of the cooling apparatus of FIG. 1, detailed description thereof will be omitted.

The third plate 300 ′ has a second space 310 connected to the first through hole 210 and the second through hole 220 of the second plate 200. The second space 310 of the third plate 300 ′ is grooved to extend from the first through hole 210 of the second plate 200 to the second through hole 220 in the third plate 300 ′. It can be formed by forming a. In the present embodiment, the second space 310 of the third plate 300 ′ is formed in a shape in which an upper side thereof is blocked and opened downward. That is, the third plate 300 ′ does not have a bottom portion 320 unlike the third plate 300 of the cooling device 1 of FIG. 1, and instead has a ceiling portion 350. It is provided.

Since the third plate 300 ′ does not have a bottom portion, when the third plate 300 ′ is coupled to the upper side of the second plate 200, the second space 310 of the third plate 300 ′ may have a second portion. The first through hole 210 and the second through hole 220 of the plate 200 is in direct communication. Since the third plate 300 ′ has a ceiling 350, when the third plate 300 ′ is coupled to the second plate 200, the space in which the refrigerant C is accommodated is sealed.

As described above, according to the cooling device 2 of the present embodiment, a space in which the refrigerant C is accommodated can be sealed without the fourth plate. Therefore, since the cooling device 2 of the present embodiment does not include the fourth plate 400, it may be more advantageous to reduce manufacturing costs.

While some embodiments of the present invention have been described above, the present invention is not limited thereto and may be embodied in various forms within the scope of the technical idea of the present invention.

For example, in the above-described embodiment, a plurality of second spaces are formed between the first space 110 and the second space 310 such that a sufficient temperature difference is formed between the first space 110 and the second space 310 so as to provide a sufficient temperature difference. Although the plate 200 has been described as being disposed, the second plate 200 may be disposed as one if the first space 110 and the second space can be sufficiently separated. That is, when the thickness of the second plate 200 is sufficiently thick, only one second plate 200 may be used.

In addition, the above-described embodiment has been described as using the silicon wafer as the material of the first to third plates (100, 200, 300), the first to third plates (100, 200, 300) may be manufactured by etching a copper or aluminum plate.

In addition, in the above-described embodiment, the photolithography method is used to form the first to third plates 100, 200 and 300, but the first to third plates 100, 200 and 300 may be manufactured by mechanical processing such as drilling or cutting. It may be.

In addition, although the fourth plate 400 of the cooling apparatus of FIG. 1 has been described as being made of a glass material, the fourth plate 400 may also be made of a silicon wafer material.

In addition, in the method of manufacturing a cooling apparatus according to the above-described embodiment, the process of preparing the first to fourth plates 100, 200, 300, and 400 and the process of combining them are sequentially described, but this is merely for convenience of explanation. That is, the process of preparing the first to fourth plates 100, 200, 300, and 400 may be performed in a different order or at the same time, or may be performed simultaneously with the process of combining the first to fourth plates 100, 200, 300, and 400.

In addition, the present invention may be embodied in various forms.

1,2 ... cooling unit 100 ... first plate
110 ... First space 200 ... Second plate
210 ... first through hole 220 ... second through hole
300 ... third plate 310 ... second space
400 ... fourth plate C ... refrigerant

Claims

A first plate having a first space for containing a refrigerant therein;
At least one second plate stacked on an upper side of the first plate to cover the first space and having a first through hole connected to one side of the first space and a second through hole connected to the other side of the first space. Wow,
And a third plate disposed above the second plate and having a second space connecting the first through hole and the second through hole.

The method of claim 1,
The first plate, the second plate and the third plate,
Cooling device formed of silicon wafer material.

The method of claim 1,
The third plate,
The second space is formed in a shape that is open upwards,
And a fourth plate disposed above the third plate to cover the second space.

The method of claim 3,
The fourth plate,
Cooling device formed of glass material.

The method of claim 1,
In the third plate,
A plurality of grooves extending from the first through hole of the second plate in the direction of the second through hole is further formed,
The second space of the third plate,
The cooling device which is a space which the said some groove divides.

Preparing a first plate having a first space therein for containing a refrigerant;
At least one second plate having at least one first through hole which may be connected to one side of the first space and at least one second through hole which may be connected to the other side of the first space when the first plate is laminated; Preparing a;
Preparing a third plate having a second space in which the at least one first through hole and the at least one second through hole are connected to each other when disposed above the second plate; And
Stacking and joining the first plate, the at least one second plate, and the third plate in sequence.

The method of claim 6,
Preparing the first plate,
Preparing the first plate by etching the silicon wafer to form the first space,
Preparing the second plate,
Etching the silicon wafer to form the second plate by forming the first through hole and the second through hole,
Preparing the third plate,
And preparing the third plate by etching the silicon wafer to form the second space.

The method of claim 7, wherein
The third plate,
The second space is formed in a shape that is open upwards,
Preparing a fourth plate to cover the second space; And
Arranging and coupling the fourth plate on the upper side of the third plate.

9. The method of claim 8,
Preparing the fourth plate,
The manufacturing method of the cooling apparatus which is a step of providing the said 4th plate from a glass material.

The method of claim 6,
In the third plate,
A plurality of grooves extending from the first through hole of the second plate in the direction of the second through hole is further formed,
The second space of the third plate,
The manufacturing method of the cooling apparatus which is a space which the said some groove divides.

The method of claim 6,
Laminating and bonding the first, second and third plates in sequence,
Bonding between the first, second and third plates with an anodic junction.

Providing a first plate having a first space therein for containing a refrigerant;
Stacking and bonding the plurality of second plates to each other;
At least one first through hole connected to one side of the first space and at least one second through hole connected to the other side of the first space when the stacked second plate is disposed above the first plate. Forming a;
Providing a third plate having a second space in which the at least one first through hole and the at least one second through hole are connected to each other when disposed above the plurality of second plates; And
Stacking and joining the first plate, the plurality of second plates, and the third plate.