KR20120099549A - Light emitting device package, fabrication method for light emitting device package and lighting system - Google Patents

Light emitting device package, fabrication method for light emitting device package and lighting system Download PDF

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Publication number
KR20120099549A
KR20120099549A KR1020110009074A KR20110009074A KR20120099549A KR 20120099549 A KR20120099549 A KR 20120099549A KR 1020110009074 A KR1020110009074 A KR 1020110009074A KR 20110009074 A KR20110009074 A KR 20110009074A KR 20120099549 A KR20120099549 A KR 20120099549A
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KR
South Korea
Prior art keywords
light emitting
emitting device
layer
device package
electrode layer
Prior art date
Application number
KR1020110009074A
Other languages
Korean (ko)
Inventor
조범철
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엘지이노텍 주식회사
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Priority to KR1020110009074A priority Critical patent/KR20120099549A/en
Publication of KR20120099549A publication Critical patent/KR20120099549A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

Abstract

PURPOSE: A light emitting device package, a manufacturing method thereof, and a lighting system are provided to reduce thermal resistance at the surface of the light emitting device package by releasing heat generated in a light emitting device through a plurality of holes arranged within a body. CONSTITUTION: A body(110) has a plurality of holes(111,112). An insulating layer(121) is formed on the surface of the body. A plurality of electrode layers(131,133) is separately formed on the body. A light emitting device(141) is arranged at least one surfaces among the plurality of electrode layers. The plurality of electrode layers is formed into a metal layer of a single layer. The plurality of electrode layers comprises at least one between aluminum and silver. The thickness of the plurality of electrode layers is in a range of 1 to 30micrometers.

Description

LIGHT EMITTING DEVICE PACKAGE, FABRICATION METHOD FOR LIGHT EMITTING DEVICE PACKAGE AND LIGHTING SYSTEM}

Embodiments relate to a light emitting device package, a method of manufacturing the same, and an illumination system.

Light emitting diodes (LEDs) are semiconductor light emitting devices that convert current into light. Recently, light emitting diodes (LEDs) have been increasingly used as a light source for displays, a light source for automobiles, and a light source for illumination. Recently, light emitting diodes Can also be implemented.

The embodiment provides a light emitting device package having a new structure.

The embodiment provides a light emitting device package having a single electrode layer.

The embodiment provides a light emitting device package capable of dissipating heat generated from the light emitting device through a plurality of holes disposed in the body.

The embodiment can improve the reliability of the light emitting device package and the lighting system having the same.

The light emitting device package according to the embodiment includes a body having a plurality of holes; An insulating layer on the surface of the body; A plurality of electrode layers spaced apart from each other on the body; A light emitting device is disposed on at least one of the plurality of electrode layers, and the plurality of electrode layers is formed of a single metal layer.

In another embodiment, a light emitting device package manufacturing method includes: forming a mask layer having a plurality of openings on a body; Etching the opening to form a plurality of holes in the body; Removing the mask layer and forming an insulating layer on a surface of the body; Forming a single layer electrode layer on the insulating layer by using a metal paste; Mounting a light emitting device on the electrode layer;

The embodiment can reduce the thermal resistance on the surface of the light emitting device package, thereby improving heat dissipation efficiency.

The embodiment can improve the reliability of the light emitting device package.

1 is a perspective view of a light emitting device package according to a first embodiment.
FIG. 2 is a cross-sectional view taken along the AA side of FIG. 1.
3 is a partially enlarged view of FIG. 2.
4 is a side cross-sectional view of a light emitting device package according to the second embodiment.
5 to 17 are diagrams illustrating a manufacturing process of the light emitting device package of FIG. 1.
18 is a side cross-sectional view of a light emitting device package according to the third embodiment.
19 and 20 are views illustrating a surface image of an electrode layer by a screen printing method according to an embodiment.
21 is a diagram illustrating a display device including a light emitting device package according to an exemplary embodiment.
22 is a diagram illustrating another display device including a light emitting device package according to an exemplary embodiment.
23 is a view showing a lighting device having a light emitting device package according to the embodiment.

In the description of an embodiment, each layer (film), region, pattern, or structure is formed “on” or “under” a substrate, each layer (film), region, pad, or pattern. In the case where it is described as "to", "on" and "under" include both "directly" or "indirectly" formed. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

The thickness and size of each layer in the drawings are exaggerated, omitted, or schematically shown for convenience and clarity of explanation. In addition, the size of each component does not necessarily reflect the actual size.

1 is a perspective view illustrating a light emitting device package according to a first embodiment, and FIG. 2 is a cross-sectional view taken along the line A-A of FIG.

1 and 2, the light emitting device package 100 includes a body 110, holes 111 and 112, an insulating layer 121, a plurality of electrode layers 131 and 133, a light emitting device 141, and a lens 151. Include.

The body 110 may include a conductive material, for example, a silicon (Si) based material. The body 110 may use a material other than silicon (Si), for example, a resin material, a semiconductor material, a metal material, or a ceramic material substrate, but is not limited thereto.

The body 110 has a high thermal conductivity and a wide energy band gap (eg, 1.2 eV), so that the body 110 can be stably used at a high temperature.

A plurality of holes 111 and 112 are formed in the body 110, and the plurality of holes 111 and 112 are spaced apart from each other by more than a width of the light emitting element 141. The plurality of holes 111 and 112 may be disposed on opposite sides of the light emitting element 141, and may be disposed at the first hole 111 disposed at one side of the light emitting element 141 and the other side of the light emitting element 141. One or more second holes 112 may be formed.

The width of the first hole 111 and the second hole 112 is the narrowest in the vicinity of the center side of the body 110, it may be formed wider toward the upper and lower direction of the body (110).

The insulating layer 121 is formed on the surface of the body 110, the insulating layer 121 may be formed to a thickness of 5000 ~ 5㎛, the material is a silicon thermal oxide film (Si0 2 , Si x O y Etc.), aluminum oxide (AlOx), silicon nitride film (Si 3 N 4 , Si x N y , SiO x N y) Etc.), alumina (AlN), sapphire (Al 2 O 3 ) At least one selected from the group consisting of and the like may be formed, but is not limited thereto.

The insulating layer 121 may be disposed between the surface of the body 110, the electrode layers 131 and 133, and the bonding parts 135 and 137, but is not limited thereto.

The insulating layer 121 may be disposed in the first hole 111 and the second hole 112 to insulate the electrode layers 131 and 133 from the body 110, respectively.

The first electrode layer 131 and the second electrode layer 133 are formed on the insulating layer 121. The first electrode layer 131 and the second electrode layer 133 are spaced apart from each other by the first separator 115 on the upper surface of the body 110 and are electrically opened.

A part of the first electrode layer 131 extends through the first hole 111 to the first bonding part 135 disposed on the bottom surface of the body 110, and a part of the second electrode layer 133 is It extends to the second bonding portion 137 disposed on the lower surface of the body 110 through the second hole 112. The first electrode layer 131 and the first bonding part 135 are integrally connected, and the second electrode layer 133 and the second bonding part 137 are integrally connected.

The first electrode layer 131 and the second electrode layer 133 may be formed of a single layer metal layer using a metal having a reflectance of 80% or more in a visible light wavelength band, and the single metal layer may be aluminum (Al) and / or silver. (Ag). The reflectance of the aluminum and silver has a reflectance of 90% or more in the wavelength band of 400nm or more. The electrode layers 131 and 133 may be formed of an alloy of another metal material together with aluminum or silver, but is not limited thereto.

The thickness of the first electrode layer 131 and the second electrode layer 133 may be formed in a range of 1 μm to 30 μm, but is not limited thereto.

The first hole 111 is used as a via electrode connecting the first electrode layer 131 of the upper surface of the body 110 and the first bonding portion 135 of the lower surface of the body 110 to each other, and the second hole 112. ) May be used as a via electrode connecting the first electrode layer 131 of the upper surface of the body 110 and the second bonding portion 137 of the lower surface of the body 110 to each other. The first hole 111 and the second hole 112 are disposed closer to both side surfaces of the body 110 than the center of the body 110. Heat generated from the light emitting element 141 may be transferred to the bonding parts 135 and 137 disposed on the bottom surface of the body 110 through the first and second electrode layers 131 and 133 and the first and second holes 111 and 112. Can be. Accordingly, the heat dissipation efficiency can be improved.

At least one of the first hole 111 and the second hole 112 may be filled with each electrode layer, or only the surface of each hole may be filled. When the stack is formed on the surfaces of the first hole 111 and the second hole 112, a void may be formed in at least one of the first and second holes 111 and 112, and the void The holes 111 and 112 may be formed to have a size that does not open the connection between the respective electrode layers and the bonding portion.

A first bonding part 135, a second bonding part 137, and a heat dissipation part 139 are disposed on the bottom surface of the body 110, and the heat dissipation part 139 is formed by the first bonding part 135 and the It is disposed between the second bonding portion 137, and may be formed of the same material as the material of the electrode layers (131, 133). The heat dissipation unit 139 may be formed to have a larger area than the area of the light emitting element 141 in an area of the lower surface of the body 110 that may overlap with the light emitting element 141 in a vertical direction.

The first electrode layer 131 and the second electrode layer 133 may be disposed on the entire body of the body 110 except for the first separator 115, and may efficiently reflect light. The first separator 115 structurally separates the first electrode layer 131 and the second electrode layer 133, and the shape of the first separator 115 may be formed in a line shape.

Under the body 110, a third separation part 116 between the first bonding part 135 and the heat dissipation part 139, and a third separation part (between the second bonding part 137 and the heat dissipation part 139). 117 is disposed. The second separator 116 and the third separator 117 may be disposed in parallel to each other, for example, may be formed in a line shape. The width of each separation unit 115, 116, 117 may be formed to 100㎛ ~ 300㎛, which may represent the gap between the metal layer.

The light emitting device 141 is mounted on the first electrode layer 131, and the light emitting device 141 is connected to the second electrode layer 133 by a wire 142. The light emitting device 141 includes a Group III - V compound semiconductor, and is preferably In X Al Y Ga 1 -X - Y N (0≤X≤1, 0≤Y≤, 0≤X + Y≤1 It may include an active layer having a composition formula), and may emit light in the visible light band or emit light in the ultraviolet band.

The light emitting device 141 may be, for example, an LED chip emitting light in a visible light band such as a blue LED chip, a green LED chip, a red LED chip, or a yellow LED chip, or an LED chip emitting light in an ultraviolet (UV) band. Can be made. As another example, the light emitting device 141 may be connected by a bonding method such as a plurality of wires, a die method, a flip method, and the like.

A lens 151 is disposed on the bodies 110 and 110, and the lens 151 may be formed of a light-transmissive resin or a glass material. The light transmitting resin series may preferably include a resin series such as silicone or epoxy. The lens 151 may be formed to have a size covering the light emitting element 141 and the wire 143.

The cross-sectional shape of the lens 151 may be a hemispherical shape or polygonal shape, and at least one portion of the lens 151 may have a concave shape. The surface of the lens 151 may be further formed with a light extraction structure such as an uneven pattern.

At least one kind of phosphor may be added in the lens 151, and the phosphor may selectively include a red phosphor, a green phosphor, a yellow phosphor, and the like, and the material of the phosphor is YAG, TAG, Silicate, Nitride. And at least one of O xy nitride-based materials.

As another example, the phosphor may be applied to the top surface of the light emitting element 141 or to the surface of the lens 151, but is not limited thereto. In addition, the lens 151 may be arranged in a multi-layer structure, but is not limited thereto.

3 will be referred to for the holes 111 and 112 formed in the body 110. 3 is an enlarged view of the second hole 112, and the first hole 111 will also be described with reference to the following description.

As shown in FIG. 3, a first inclined surface S1 and a second inclined surface S2 are formed in the second hole 112, and the first inclined surface S1 is formed from the upper surface of the body 110. Inclined at a first angle θ1 to a center direction of the center, and the second inclined surface S2 is inclined at a second angle θ2 from a lower surface of the body 110 to a central direction of the second hole 112. Is formed. The first angle θ1 and the second angle θ2 may be formed at about 30 ° to about 80 °, and preferably at about 54.74 °.

The boundary portion between the first slope S1 and the second slope S2 may be the center of the second hole 112, and as another example, an upper surface of the body 110 than the center of the second hole 112. It may be disposed closer to or closer to the lower surface of the body 110, but is not limited thereto. The minimum width D3 of the second hole 112 may be 20 μm or more, and the interval D2 between the insulating layers 121 in the second hole 112 may be spaced 10 μm or more. This interval may be an interval where holes are not blocked or blocked by the insulating layer 121.

Although the inclination surface and the inclination angle of the second hole 112 have been described, the structure of the first hole 111 is the same as that of the second hole 112, and thus, the structure of the second hole 112 is referred to. Shall be.

The center of the second hole 112 may be spaced apart from the side surface of the body 110 at a first interval, and the first hole 111 may be spaced at the same interval as described above. The first hole 111 and the second hole 112 may be spaced apart by 100 μm or more from both side surfaces of the body 110, but is not limited thereto.

In the light emitting device package according to the embodiment, the insulating layer 121 is disposed on the surface of the body 110 such as a silicon wafer having high thermal conductivity, and a metal layer having high reflectance is stacked on the surface of the insulating layer 121 as a single layer. By doing so, it is possible to improve the heat radiation efficiency. In addition, the via electrode structures are disposed in the first and second holes 111 and 112, thereby improving heat dissipation efficiency.

4 is a side cross-sectional view illustrating a light emitting device package according to a second embodiment.

Referring to FIG. 4, the light emitting device package has a structure in which a phosphor layer 145 is formed on the light emitting device 141 and a lens 151 covering the light emitting device 141 is disposed.

The phosphor layer 145 may be formed to have the same width as the top surface of the light emitting device 141, and the cross-sectional shape may include a hemispherical shape and a polygonal shape.

It is disposed closer to the top surface of the body 110 than the surface of the lens 151 of the phosphor layer 145, preferably in direct contact with the top surface of the light emitting element 141, the thickness is 1? It may be formed as above.

The phosphor layer 145 may be formed by adding at least one of yellow, blue, and green phosphors into the translucent resin, but is not limited thereto.

By disposing the phosphor layer 145 on the light emitting element 141, a separate phosphor may not be added to the lens 151, but is not limited thereto.

5 to 17 are diagrams illustrating a manufacturing process of the light emitting device package of FIG. 1.

5 and 6, the mask layer 101 is formed on the surface of the body 110.

The body 110 may preferably use a wafer made of silicon. The mask layer 101 may be formed of SiNx.

A mask pattern 102 having openings A1, A2, A3, and A4 is formed on the mask layer 101, and the mask pattern 102 is formed of silicon dioxide or a dry film photoresist (DFR). It can be formed using).

7 and 8, a portion of the mask layer 101 is removed through the openings A1, A2, A3, and A4 of the mask pattern 102, thereby opening the opening A1 of the mask pattern 102. The surface of the body 110 is exposed in A2, A3 and A4. This process can optionally utilize photo-lithography techniques and etching. The mask pattern 102 is removed from the surface of the body 110, and the mask layer 101 having the openings A1, A2, A3, and A4 is exposed.

9 and 10, a plurality of holes 111 and 112 are formed by performing an etching process through the openings of the mask layer 101.

The holes 111 and 112 may be formed by an etching process. The etching process may be etched with respect to the body 110 using a bulk etching method, wherein the bulk etching method is a wet etching method, a dry etching method, a laser drilling method. Etc. may be used, and two or more of the above methods may be used together. A typical method of the dry etching method is a deep reactive ion etching method. Potassium hydroxide (KOH) may be used as the etching solution of the wet etching. Compared to other anisotropic wet etching solutions, it has a faster etching rate, lower cost, and better crystal orientation.

The holes 111 and 112 are etched through the upper and lower surfaces of a predetermined region among the surfaces of the body 110, so that the upper and lower widths of the holes 111 and 112 are widest and narrow toward the center of the holes 111 and 112. It can be formed as.

Inclined surfaces S1 and S2 are formed in each of the holes 111 and 112, and the inclined surfaces S1 and S2 may be formed by the crystal orientation of the silicon wafer, and an etching angle thereof may be preferably formed at 54.74 °. It is not limited thereto.

The mask layer 101 is removed from the surface of the body 110. The mask layer 101 may be removed by using a wet etching solution, but is not limited thereto.

10 and 11, the holes 111 and 112 may be disposed closer to both side surfaces F1 and F2 of the body 110 than to the center of the body 110, and the body 110 as shown in FIG. 12. A plurality of first holes 111 are formed in an area closer to the first side surface F1 than the center of the center, and a plurality of second holes are located in an area closer to the second side surface F2 than the center of the body 110. 112 can be formed. The first side surface F1 and the second side surface F2 of the body 110 may be opposite sides to each other, but are not limited thereto.

The shape of the first hole 111 and the second hole 112 includes a line shape, but is not limited thereto.

Referring to FIG. 13, an insulating layer 121 is formed on the surface of the body 110. The insulating layer 121 may be formed using a deposition method, and the material may be a silicon thermal oxide layer (Si0 2 , Si x O y). Etc.), aluminum oxide (AlOx), silicon nitride film (Si 3 N 4 , Si x N y , SiO x N y) Etc.), alumina (AlN), sapphire (Al 2 O 3 ) At least one selected from the group consisting of and the like may be formed, but is not limited thereto. The insulating layer 121 may have a thickness of 5000 μm to 5 μm and may be formed in a range that does not block the holes 111 and 112.

Referring to FIG. 14, a screen mask 114 is disposed on the insulating layer 121. The screen mask 114 is an area for separating the first electrode layer 131 and the second electrode layer 133, an area for separating the first bonding part 135 and the heat dissipation part 139, and a second bonding part. 137 and the heat dissipation unit 139 are respectively formed in the area for separating.

The screen mask 114 may be formed to have a thickness of 1 μm to 50 μm, may be formed to be greater than or equal to the thickness of the electrode layers 131 and 133, and may be formed to have a width of 100 μm to 300 μm.

The screen mask 114 may be formed using a mask pattern or a photo resist, but is not limited thereto.

14 and 15, the metal paste 160 is formed by screen printing.

The metal paste 160 may be, for example, aluminum (Al) or silver (Ag) paste, and may be printed using a squeeze 161. The metal paste 160 may be mixed with other metal materials together with aluminum or silver, but is not limited thereto.

The screen printing method prints by moving to the upper and lower surfaces of the body 110 by rubbing the metal paste 160 using the squeeze 161, and the metal paste 160 in the spaces of the holes 111 and 112, respectively. ) Is filled. The metal paste 160 is formed in an area excluding the screen mask 114, and thus, the first bonding part (ie, the first electrode layer 131, the second electrode layer 133, and the bottom surface of the body 110) is formed on the upper surface of the body 110. 135, the second bonding part 137, and the heat dissipation part 139 may be divided into the two parts. The metal pate 160 may be filled in the holes 111 and 112 to connect the metal paste disposed on the upper surface of the body 110 and the lower surface of the body 110 to each other.

The screen printing method can apply a large area in a short time to the deposition or plating method, and the electrode manufacturing process has a simple effect. By forming the metal paste by the screen printing method, the first electrode layer 131 and the second electrode layer 133, the first bonding unit 135 and the second bonding unit 137, and the heat dissipating unit 139 are formed of a single layer. It may be formed of a metal layer.

The thickness of the metal layer of the single layer may be formed to a thickness of 1㎛ ~ 30㎛ from the surface of the insulating layer 121, but is not limited thereto.

Thereafter, the screen mask is removed. Accordingly, the first electrode layer 131 and the second electrode layer 133 are separated by the first separating part 115, and the first bonding part 135 and the heat dissipating part 139 are connected to the second separating part 116. The second bonding part 137 and the heat dissipation part 139 may be separated by the third separating part 117.

Thereafter, a process of firing the metal paste is performed. The firing process is baked at a low temperature, for example, 300 ℃ ~ 600 ℃ to cure. 19 and 20 are surface images of a metal paste fired by a screen printing method. 19 shows an example of firing a metal paste at a firing temperature of 450 ° C. and has a rough surface.

FIG. 20 shows that the metal paste is fired at a firing temperature of 550 ° C., and may be a surface of a substantially metal layer. Here, FIG. 20A illustrates an SEM electron beam image, and FIG. 20B illustrates an SEM ion beam image. As shown in FIG. 20, the surface of the metal paste is formed with irregular roughness, and the roughness can scatter light, thereby improving light extraction efficiency.

The firing process may be performed without separating the screen mask, but the embodiment is not limited thereto.

Referring to FIG. 16, the light emitting device 141 is mounted on the first electrode layer 131 above the body 110, and the light emitting device 141 is connected to the second electrode layer 133 by a wire 142. .

The light emitting element 141 may be electrically connected to the first electrode layer 131 and the second electrode layer 133. The light emitting device 141 may be connected to the first electrode layer 131 and the second electrode layer 133 by a wire 152. The light emitting device 141 may be bonded to the first electrode layer 131 with a solder paste (not shown) or bonded in a die attach manner. Here, the light emitting device 141 emits light of a predetermined wavelength, for example, an LED chip that emits light in a visible light band such as a blue LED chip, a green LED chip, a red LED chip, a yellow LED chip, or an ultraviolet ray. It may consist of an LED chip that emits light in the (UV) band.

The light emitting device 141 is a group III -5 compound may comprise a semiconductor material, preferably In x Al y Ga 1 -x- y N (0≤x≤1, 0≤y≤1, 0≤x and a semiconductor material having a compositional formula of + y ≦ 1). As another example, the light emitting device 141 may be connected to the first electrode layer 131 and the second electrode layer 133 by a plurality of wires, or may be used as a bonding method such as a die method or a flip method.

A plurality of light emitting devices 141 may be disposed on the first electrode layer 131 and / or the second electrode layer 133, but embodiments are not limited thereto.

Referring to FIG. 17, a lens 151 is disposed on the light emitting element 141. The lens 151 may include a translucent resin material, and the translucent resin material may be formed on the light emitting device 141 by dispensing a liquid material such as silicon or epoxy, or manufactured in a separate lens 151 shape. Can then be combined. The lens 151 includes a glass material, but is not limited thereto.

The cross-sectional shape of the lens 151 may include a hemispherical or polygonal shape, and at least one kind of phosphor may be added therein, and the phosphor may selectively include a red phosphor, a green phosphor, a yellow phosphor, and the like. But it is not limited thereto. The material of the fluorescent material may include YAG, TAG, Silicate, Nitride, O xy nitride -based at least one of the substances.

18 is a side cross-sectional view illustrating a light emitting device package according to a third embodiment.

Referring to FIG. 18, in the light emitting device package, the first hole 111A is disposed at the center of the body 110, and the second hole 112 is formed at a position closer to the second side surface than the center of the body 110. do. The first hole 111A is spaced apart from the first side surface F1 of the body 110 by a distance D4 about 1/2 of the width of the body 110 and disposed at the center of the body 110. Accordingly, power may be supplied to the light emitting device 141 through the first hole 111A, and heat may be radiated by conducting heat generated from the light emitting device 141 in a vertical downward direction.

Although the package of the embodiment has been shown and described in the form of a top view, it is implemented in a side view method has the effect of improving the heat dissipation characteristics, conductivity and reflection characteristics as described above, the indicator device employing such a top view or side view light emitting device package, When applied to a lighting device, a display device, etc., it is possible to improve the reliability by the heat radiation efficiency.

The light emitting device package according to the embodiment may be applied to the light unit. The light unit includes a structure in which a plurality of light emitting device packages are arranged, and includes a display device shown in FIGS. 21 and 22 and a lighting device shown in FIG. 23. Can be.

21 is an exploded perspective view of a display device according to an exemplary embodiment.

Referring to FIG. 21, the display device 1000 according to the embodiment includes a light guide plate 1041, a light emitting module 1031 that provides light to the light guide plate 1041, and a reflective member 1022 under the light guide plate 1041. ), An optical sheet 1051 on the light guide plate 1041, a display panel 1061, a light guide plate 1041, a light emitting module 1031, and a reflective member 1022 on the optical sheet 1051. The bottom cover 1011 may be included, but is not limited thereto.

The bottom cover 1011, the reflective sheet 1022, the light guide plate 1041, and the optical sheet 1051 can be defined as a light unit 1050.

The light guide plate 1041 diffuses light to serve as a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), cycloolefin copolymer (COC), and polyethylene naphthalate (PEN). It may include one of the resins.

The light emitting module 1031 provides light to at least one side of the light guide plate 1041, and ultimately serves as a light source of the display device.

The light emitting module 1031 may include at least one, and may provide light directly or indirectly at one side of the light guide plate 1041. The light emitting module 1031 may include a substrate 1033 and a light emitting device package 100 according to the above-described embodiment, and the light emitting device package 100 may be arrayed on the substrate 1033 at predetermined intervals. have.

The substrate 1033 may be a printed circuit board (PCB) including a circuit pattern (not shown). However, the substrate 1033 may include not only a general PCB but also a metal core PCB (MCPCB, Metal Core PCB), a flexible PCB (FPCB, Flexible PCB) and the like, but is not limited thereto. When the light emitting device package 100 is mounted on the side surface of the bottom cover 1011 or the heat dissipation plate, the substrate 1033 may be removed. Here, a part of the heat dissipation plate may contact the upper surface of the bottom cover 1011.

In addition, the plurality of light emitting device packages 100 may be mounted on the substrate 1033 such that an emission surface from which light is emitted is spaced apart from the light guide plate 1041 by a predetermined distance, but is not limited thereto. The light emitting device package 100 may directly or indirectly provide light to a light incident portion that is one side of the light guide plate 1041, but is not limited thereto.

The reflective member 1022 may be disposed under the light guide plate 1041. The reflective member 1022 may improve the luminance of the light unit 1050 by reflecting light incident to the lower surface of the light guide plate 1041 and pointing upward. The reflective member 1022 may serve to diffuse, for example, a surface light source. The light guide plate 1041 is made of a transparent material, for example, acrylic resin-based, such as polymethyl metaacrylate (PMMA), polyethylene terephthlate (PET), polycarbonate (PC), polyvinyl chloride (PVC), cycloolefin copolymer (COC) And PEN (polyethylene naphthalate) resin.

The reflective member 1022 may be an upper surface of the bottom cover 1011, but is not limited thereto.

The bottom cover 1011 may house the light guide plate 1041, the light emitting module 1031, the reflective member 1022, and the like. To this end, the bottom cover 1011 may be provided with a housing portion 1012 having a box-like shape with an opened upper surface, but the present invention is not limited thereto. The bottom cover 1011 may be combined with the top cover, but is not limited thereto.

The bottom cover 1011 may be formed of a metal material or a resin material, and may be manufactured using a process such as press molding or extrusion molding. In addition, the bottom cover 1011 may include a metal or a non-metal material having good thermal conductivity, but the present invention is not limited thereto.

The display panel 1061 is, for example, an LCD panel, and includes a first and second substrates of transparent materials facing each other, and a liquid crystal layer interposed between the first and second substrates. A polarizing plate may be attached to at least one surface of the display panel 1061, but the present invention is not limited thereto. The display panel 1061 displays information by light passing through the optical sheet 1051. The display device 1000 may be applied to various portable terminals, monitors of notebook computers, monitors of laptop computers, televisions, and the like.

The optical sheet 1051 is disposed between the display panel 1061 and the light guide plate 1041 and includes at least one light transmissive sheet. The optical sheet 1051 may include at least one of a sheet such as, for example, a diffusion sheet, a horizontal and vertical prism sheet, and a brightness enhancement sheet. The diffusion sheet diffuses the incident light, the horizontal and / or vertical prism sheet focuses the incident light into the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness. A protective sheet may be disposed on the display panel 1061, but the present invention is not limited thereto.

Here, the light guide plate 1041 and the optical sheet 1051 may be included as an optical member on the optical path of the light emitting module 1031, but are not limited thereto.

22 is a diagram illustrating a display device according to an exemplary embodiment. The package disclosed in the description of FIG. 22 will be referred to the package of FIG. 1.

Referring to FIG. 22, the display device 1100 includes a bottom cover 1152, a substrate 1120 on which the light emitting device package 100 disclosed above is arranged, an optical member 1154, and a display panel 1155. .

The substrate 1120 and the light emitting device package 100 may be defined as a light emitting module 1060. The bottom cover 1152, at least one light emitting module 1060, and the optical member 1154 may be defined as a light unit.

The bottom cover 1152 may include an accommodating part 1153, but is not limited thereto.

Here, the optical member 1154 may include at least one of a lens 151, a light guide plate, a diffusion sheet, horizontal and vertical prism sheets, and a brightness enhancement sheet. The light guide plate may be made of a polycarbonate (PC) material or a poly methy methacrylate (PMMA) material, and the light guide plate may be removed. The diffusion sheet diffuses the incident light, the horizontal and vertical prism sheets focus the incident light onto the display area, and the brightness enhancement sheet reuses the lost light to improve the brightness.

23 is a perspective view of a lighting apparatus according to an embodiment.

Referring to FIG. 23, the lighting device 1500 may include a case 1510, a light emitting module 1530 installed in the case 1510, and a connection terminal installed in the case 1510 and receiving power from an external power source. 1520).

The case 1510 may be formed of a material having good heat dissipation, for example, may be formed of a metal material or a resin material.

The light emitting module 1530 may include a substrate 1532 and a light emitting device package 200 according to an embodiment mounted on the substrate 1532. The plurality of light emitting device packages 200 may be arranged in a matrix form or spaced apart at predetermined intervals.

The substrate 1532 may be a circuit pattern printed on an insulator, and for example, a general printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like. It may include.

In addition, the substrate 1532 may be formed of a material that reflects light efficiently, or a surface may be coated with a color, for example, white or silver, in which the light is efficiently reflected.

At least one light emitting device package 200 may be mounted on the substrate 1532. Each of the light emitting device packages 200 may include at least one light emitting diode (LED) chip. The LED chip may include a colored light emitting diode emitting red, green, blue or white colored light, and a UV emitting diode emitting ultraviolet (UV) light.

The light emitting module 1530 may be arranged to have a combination of various light emitting device packages 200 to obtain color and luminance. For example, a white light emitting diode, a red light emitting diode, and a green light emitting diode may be combined to secure high color rendering (CRI).

The connection terminal 1520 may be electrically connected to the light emitting module 1530 to supply power. The connection terminal 1520 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1520 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by a wire.

Although the present invention has been described above with reference to the embodiments, these are merely examples and are not intended to limit the present invention. It will be appreciated that various modifications and applications are not illustrated. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

100: light emitting device package, 111, 112: hole, 121: insulating layer, 131, 133: electrode layer, 141: light emitting element, 151: lens, 145: phosphor layer

Claims (10)

A body having a plurality of holes;
An insulating layer on the surface of the body;
A plurality of electrode layers spaced apart from each other on the body;
A light emitting device disposed on at least one of the plurality of electrode layers,
The plurality of electrode layers is a light emitting device package formed of a single metal layer. The light emitting device package of claim 1, wherein the plurality of electrode layers comprises at least one of aluminum and silver. The light emitting device package of claim 1, wherein the electrode layer has a thickness in a range of about 1 μm to about 30 μm. The method of claim 1, wherein the plurality of electrode layers comprises a first electrode layer and a second electrode layer,
A first bonding part disposed under the body and connected to the first electrode layer through the first hole; And a second bonding part disposed under the body and connected to the second electrode layer through the second hole.
The first bonding portion and the second bonding portion is a light emitting device package formed of the same metal layer as the first and second electrode layer. The light emitting device of claim 4, further comprising a heat dissipation unit disposed below the body in a direction perpendicular to the light emitting element.
The heat dissipation unit is a light emitting device package formed of the same metal layer as the electrode layer. The light emitting device package of claim 1, further comprising a phosphor layer in contact with the light emitting device. The light emitting device package of claim 1 or 6, further comprising a lens on the light emitting device. The light emitting device package of claim 1, wherein the body comprises a silicon material. Forming a mask layer having a plurality of openings on the body;
Etching the opening to form a plurality of holes in the body;
Removing the mask layer and forming an insulating layer on a surface of the body;
Forming a single layer electrode layer on the insulating layer by using a metal paste;
A light emitting device package manufacturing method comprising the step of mounting a light emitting device on the electrode layer. The method of claim 9, wherein the electrode layer of the single layer comprises at least one of aluminum and silver, and is filled in the hole, respectively.
KR1020110009074A 2011-01-28 2011-01-28 Light emitting device package, fabrication method for light emitting device package and lighting system KR20120099549A (en)

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