KR20120097820A - Ribbon wire for solar cell module and manufacturing method thereof - Google Patents

Ribbon wire for solar cell module and manufacturing method thereof Download PDF

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KR20120097820A
KR20120097820A KR1020110017280A KR20110017280A KR20120097820A KR 20120097820 A KR20120097820 A KR 20120097820A KR 1020110017280 A KR1020110017280 A KR 1020110017280A KR 20110017280 A KR20110017280 A KR 20110017280A KR 20120097820 A KR20120097820 A KR 20120097820A
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tin
solar cell
cell module
flat conductor
ribbon wire
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KR1020110017280A
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Korean (ko)
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김정익
박재성
곽일조
한흥남
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엘에스전선 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C2/00—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor
    • C23C2/04—Hot-dipping or immersion processes for applying the coating material in the molten state without affecting the shape; Apparatus therefor characterised by the coating material
    • C23C2/08—Tin or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
    • H01B13/0026—Apparatus for manufacturing conducting or semi-conducting layers, e.g. deposition of metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02016—Circuit arrangements of general character for the devices
    • H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

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  • Engineering & Computer Science (AREA)
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Abstract

PURPOSE: A ribbon wire for a solar cell module and a manufacturing method thereof are provided to reduce surface oxidation by using a first tin plated annular wire rod as a base material for a flat conductor. CONSTITUTION: A first tin plated annular wire rod is prepared. A flat conductor(110) is formed by rolling the first tin plated annular wire rod. A tin plating film(122) is formed on the surface of the flat conductor. The tin plating film is formed on a first tin plating film by a second plating process.

Description

태양전지 모듈용 리본 와이어 및 그 제조방법{Ribbon wire for solar cell module and manufacturing method thereof}Ribbon wire for solar cell module and manufacturing method therefor {Ribbon wire for solar cell module and manufacturing method

본 발명은 태양전지 모듈용 리본 와이어 및 그 제조방법에 관한 것으로서, 보다 상세하게는 태양전지 모듈의 각 태양전지 셀(Solar cell)들을 전기적으로 연결하는 용도로 사용되는 리본 와이어에 관한 것으로 특히, 주석이 도금되어 태양전지 셀과의 용접이 용이한 태양전지 모듈용 리본 와이어 및 그 제조방법에 관한 것이다.The present invention relates to a ribbon wire for a solar cell module and a method for manufacturing the same, and more particularly, to a ribbon wire used for electrically connecting each solar cell of a solar cell module. The present invention relates to a ribbon wire for a solar cell module which is plated and easily welded to a solar cell, and a manufacturing method thereof.

태양광 발전에 사용되는 태양전지는 전지용량 등의 요구 특성에 걸맞게 다수의 태양전지 셀(Solar cell)들이 패널 내에 배열된 모듈 형태로 제작된다.Solar cells used in photovoltaic power generation are manufactured in the form of modules in which a plurality of solar cells are arranged in a panel in accordance with requirements such as battery capacity.

이러한 태양전지 모듈은 도 1에 도시된 바와 같이, 다수의 태양전지 셀(1)들이 리본 와이어(10)에 의해 상호 전기적으로 접속되도록 구성된다.Such a solar cell module is configured such that a plurality of solar cells 1 are electrically connected to each other by ribbon wires 10, as shown in FIG.

일반적으로, 상기 리본 와이어(10)는 도 2에 도시된 바와 같이, 평각 도체(11)와 그 표면에 태양전지 셀(10)과의 접속을 위해 형성된 땜납 도금막(12)을 포함한다.In general, the ribbon wire 10 includes a flat conductor 11 and a solder plating film 12 formed on the surface thereof for connection with the solar cell 10.

상기 평각 도체(11)는 태양전지 셀(10)과의 부착 면적을 넓히기 위해 TPC(터프피치 동)나 OFC(무산소 동)로 이루어진 환형 선재를 압연공정을 통해 제조된다. 이 때, 원활한 압연공정을 위해 압연 중 압연유를 환형 선재의 표면에 도포하며 압연후에는 인장강도, 항복강도, 연신율 등 평각 도체(11)의 기계적인 특성을 만족시키기 위해 열처리를 수행한다. 압연공정을 통해 제조된 평각 도체(11)는 표면에 부착되어 있는 압연유 등 도금의 품질을 저하할 수 있는 이물질을 제거하기 위하여 탈지, 산세, 수세 등의 공정을 수행한다.The flat conductor 11 is manufactured through a rolling process of an annular wire made of TPC (tough pitch copper) or OFC (oxygen-free copper) to widen the attachment area with the solar cell 10. At this time, the rolling oil is applied to the surface of the annular wire rod during rolling for smooth rolling process, and after rolling, heat treatment is performed to satisfy the mechanical properties of the flat conductor 11 such as tensile strength, yield strength and elongation. The flat conductor 11 manufactured through the rolling process performs a process such as degreasing, pickling, and washing in order to remove foreign matters that may lower the quality of plating such as rolling oil attached to the surface.

상기 땜납 도금막(12)은 주석(Sn) 또는 주석합금을 평각 도체(11) 표면에 도금하여 형성한다. 상기 땜납 도금막(12)의 형성은 주로 용융도금 방식이 이용되는데 이는 다시 수직형 또는 수평형 도금으로 나뉠 수 있으며, 이 중 수직형 도금 방식이 수평형 도금 방식에 비해 상대적으로 두께 편차의 해소가 쉬운 것으로 알려져 있다.The solder plating film 12 is formed by plating tin (Sn) or a tin alloy on the flat conductor 11 surface. The solder plating film 12 is mainly formed by a hot dip plating method, which may be divided into a vertical type or a horizontal type plating. Among them, the vertical plating method eliminates the variation in thickness relative to the horizontal plating method. It is known to be easy.

이러한 땜납 도금막(12)의 두께를 조절하는 방법으로는 수평식의 경우 다이스 방식이 이용되고, 수직식의 경우 에어나이프 방식이 일반적으로 적용된다.As a method of adjusting the thickness of the solder plating film 12, a die method is used in the horizontal type, and an air knife method is generally applied in the vertical type.

다이스 방식의 경우 다이스 표면과의 직접적인 접촉에 의해 도금층 두께의 조절 및 표면의 평탄화가 가능하며, 에어나이프 방식의 경우 에어나이프의 노즐을 통해 분사되는 공기압을 이용하여 도금층 두께의 조절 및 표면의 평탄화가 이루어진다.In the case of the die method, the thickness of the plating layer can be adjusted and the surface is flattened by direct contact with the surface of the die.In the case of the air knife method, the thickness of the plating layer can be controlled and the surface is flattened by using the air pressure sprayed through the nozzle of the air knife. Is done.

그런데, 상기한 다이스 방식을 이용한 주석 또는 주석합금 용융 도금 방법에서는 용융 주석의 표면이 대기와의 접촉으로 인해 산화 주석층이 형성될 수 있었고, 이 산화 주석층과 용융액의 도금조 내에 유입되는 불순물이 평각 도체(11)의 표면 또는 다이스에 부착되면서 평각 도체(11)에 도금되는 땜납 도금막(12)의 두께가 불균일해지는 문제점이 있었다.However, in the tin or tin alloy hot dip plating method using the die method, a tin oxide layer may be formed due to the surface of the molten tin being in contact with the atmosphere, and impurities introduced into the tin oxide layer and the plating tank of the melt may be formed. There was a problem that the thickness of the solder plating film 12 plated on the flat conductor 11 while being attached to the surface or the die of the flat conductor 11 was uneven.

이러한 문제점을 해결하기 위해서 종래에는 다이스를 주석 용융조 내에 설치하는 방법이나, 에어나이프 방식의 융용 도금 방법을 이용하거나 직접 평각 도체 표면을 닦는 방법이 이용되었다. 하지만, 이러한 종래의 방법으로도 선재 표면에 부착되는 산화 주석층이나 오염물을 근본적으로 제거하는 방법이 아니었기 때문에 품질 저항의 문제를 여전히 안고 있는 문제점이 있었다.In order to solve this problem, conventionally, a method of installing a die in a tin melting tank, an air knife melt plating method, or a method of directly cleaning a flat conductor surface has been used. However, this conventional method was not a method of fundamentally removing the tin oxide layer or contaminants adhering to the wire surface, so there was still a problem of quality resistance.

본 발명은 상기와 같은 종래기술의 문제점을 해결하기 위해 창안된 것으로서, 태양전지 모듈용 리본 와이어의 평각 도체를 형성하는 모재로 1차 주석 도금된 환형 선재를 이용하여 표면 산화를 줄일 수 있고, 전처리 공정의 생략이 가능한 태양전지 모듈용 리본 와이어 및 그 제조방법을 제공하는데 그 목적이 있다.The present invention has been made to solve the problems of the prior art as described above, by using a primary tin plated annular wire as a base material to form a flat conductor of a ribbon wire for a solar cell module, it is possible to reduce the surface oxidation, pretreatment It is an object of the present invention to provide a ribbon wire for a solar cell module and a method of manufacturing the same, which can be omitted.

상기 기술적 과제를 달성하기 위한 본 발명에 따른 태양전지 모듈용 리본 와이어는, 태양전지 모듈용 리본 와이어에 있어서, 평각 형태의 평각 도체와, 상기 평각 도체의 표면에 형성된 주석 도금막을 포함하고, 상기 평각 도체는 1차 주석 도금된 환형 선재를 모재로 하여 형성되는 것을 특징으로 한다.The ribbon wire for a solar cell module according to the present invention for achieving the above technical problem, in the ribbon wire for a solar cell module, includes a flat conductor of the flat form and a tin-plated film formed on the surface of the flat conductor, the flat The conductor is characterized in that it is formed with a primary tin-plated annular wire as a base material.

바람직하게, 상기 평각 도체는 상기 1차 주석 도금된 환형 선재를 압연 가공하여 형성된다.Preferably, the flat conductor is formed by rolling the primary tin plated annular wire rod.

바람직하게, 상기 주석 도금막은 상기 1차 주석 도금막 상에 2차적으로 도금하여 형성된다.Preferably, the tin plating film is formed by secondary plating on the primary tin plating film.

바람직하게, 상기 주석 도금막과 1차 주석 도금막은 유사한 녹는점을 갖는 성분으로 이루어진다.Preferably, the tin plated film and the primary tin plated film are made of a component having a similar melting point.

상기 기술적 과제를 달성하기 위한 본 발명에 따른 태양전지 모듈용 리본 와이어의 제조방법에 있어서, 태양전지 모듈용 리본 와이어의 제조방법에 있어서, 1차 주석 도금된 환형 선재를 준비하는 단계; 상기 1차 주석 도금된 환형 선재를 압연 가공하여 평각 도체를 형성하는 단계; 상기 평각 도체 표면에 주석 도금막을 형성하는 단계;를 포함한다.In the method of manufacturing a ribbon wire for a solar cell module according to the present invention for achieving the above technical problem, A method of manufacturing a ribbon wire for a solar cell module, comprising: preparing a primary tin plated annular wire; Rolling the primary tin plated annular wire to form a flat conductor; And forming a tin plating film on the flat conductor surface.

본 발명에 따르면, 태양전지 모듈용 리본 와이어의 평각 도체를 형성하는 모재로 1차 주석 도금된 환형 선재를 이용함으로써, 평각 도체의 압연 공정이나 도금 공정에서 표면에 산화층이 발생되는 것을 줄일 수 있고, 도금막 품질에 영향을 줄 수 있는 오염 인자들을 제거할 수 있어 용융 도금 공정 이전의 전처리 공정을 배제하는 것이 가능하여 제조 공정 단순화와 제조비용을 절감할 수 있는 경제성이 있다.According to the present invention, by using a primary tin plated annular wire as a base material for forming a flat conductor of a ribbon wire for a solar cell module, it is possible to reduce the occurrence of an oxide layer on the surface during the rolling process or the plating process of the flat conductor, Contamination factors that can affect the plating film quality can be eliminated, which makes it possible to exclude pretreatment processes prior to the hot dip plating process, thereby simplifying the manufacturing process and reducing the manufacturing cost.

본 명세서에 첨부되는 도면들은 본 발명의 바람직한 실시예를 예시하는 것이며, 발명의 후술되는 상세한 설명과 함께 본 발명의 기술사상을 더욱 이해시키는 역할을 하는 것이므로, 본 발명은 그러한 도면에 기재된 사항에만 한정되어 해석되어서는 아니된다.
도 1은 일반적인 태양전지 모듈의 주요 구성을 도시한 부분 확대도이다.
도 2는 종래의 태양전지 모듈용 리본 와이어의 단면도이다.
도 3은 본 발명에 따른 태양전지 모듈용 리본 와이어의 단면도이다.
도 4는 본 발명에 따른 태양전지 모듈용 리본 와이어의 제조방법을 설명하기 위해 도시한 흐름도이다.BRIEF DESCRIPTION OF THE DRAWINGS The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate preferred embodiments of the invention and, together with the description, And shall not be interpreted.
1 is a partially enlarged view illustrating a main configuration of a general solar cell module.
2 is a cross-sectional view of a ribbon cable for a conventional solar cell module.
3 is a cross-sectional view of a ribbon wire for a solar cell module according to the present invention.
4 is a flowchart illustrating a method of manufacturing a ribbon wire for a solar cell module according to the present invention.

이하 첨부된 도면을 참조로 본 발명의 바람직한 실시예를 상세히 설명하기로 한다. 이에 앞서, 본 명세서 및 청구범위에 사용된 용어나 단어는 통상적이거나 사전적인 의미로 한정해서 해석되어서는 아니 되며, 발명자는 그 자신의 발명을 가장 최선의 방법으로 설명하기 위해 용어의 개념을 적절하게 정의할 수 있다는 원칙에 입각하여 본 발명의 기술적 사상에 부합하는 의미와 개념으로 해석되어야만 한다. 따라서, 본 명세서에 기재된 실시예와 도면에 도시된 구성은 본 발명의 가장 바람직한 일 실시예에 불과할 뿐이고 본 발명의 기술적 사상을 모두 대변하는 것은 아니므로, 본 출원시점에 있어서 이들을 대체할 수 있는 다양한 균등물과 변형예들이 있을 수 있음을 이해하여야 한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms and words used in the present specification and claims should not be construed as limited to ordinary or dictionary terms, and the inventor should appropriately interpret the concepts of the terms appropriately It should be interpreted in accordance with the meaning and concept consistent with the technical idea of the present invention based on the principle that it can be defined. Therefore, the embodiments described in this specification and the configurations shown in the drawings are merely the most preferred embodiments of the present invention and do not represent all the technical ideas of the present invention. Therefore, It is to be understood that equivalents and modifications are possible.

도 3은 본 발명에 따른 태양전지 모듈용 리본 와이어의 단면도이고, 도 4는 본 발명에 따른 태양전지 모듈용 리본 와이어의 제조방법을 설명하기 위해 도시한 흐름도이다.3 is a cross-sectional view of a ribbon wire for a solar cell module according to the present invention, Figure 4 is a flow chart illustrating a method for manufacturing a ribbon wire for a solar cell module according to the present invention.

도 3을 참조하면, 본 발명에 따른 태양전지 모듈용 리본 와이어(100)는, 평각 형태를 갖는 평각 도체(110)와, 이 평각 도체(110) 표면에 도금된 주석 도금막(122)을 포함한다.Referring to FIG. 3, the ribbon wire 100 for a solar cell module according to the present invention includes a flat conductor 110 having a flat shape, and a tin plated film 122 plated on the flat conductor 110 surface. do.

상기 평각 도체(110)는 태양전지 셀과의 부착 면적을 넓히기 위해 평각 형태로 이루어진다. 평각 도체(110)는 구리(Cu)를 주성분으로 이루어지며, 형태적 특성 부여를 위해 환형 선재를 압연가공하여 제조된 것이다.The flat conductor 110 is formed in a flat shape to widen the attachment area with the solar cell. The flat conductor 110 is made of copper (Cu) as a main component, and is manufactured by rolling an annular wire rod for morphological characteristics.

종래의 경우, 나동 환형 선재를 모재로 이용하여 평각 도체를 제조하였으나, 이 경우, 이 후에 주석 도금막을 형성하는 과정에서 평각 도체 표면에 산화 주석층이나 기타 오염물질로 인해 주석 도금막의 두께가 불균일한 문제가 있었다. 이에 종래에는 평각 도체의 표면 변색 및 압연 가공중에 부착된 압연유 등의 오염물질을 제거하기 위하여 산세, 수세 공정 등으로 이루어진 전처리 공정을 필수적으로 수반되어야만 하는 어려움이 있었다.Conventionally, the flat conductor was manufactured using a bare copper wire as a base material, but in this case, the thickness of the tin plated film was uneven due to the tin oxide layer or other contaminants on the flat conductor surface during the formation of the tin plated film. There was a problem. Therefore, in the related art, in order to remove contaminants such as rolling oil adhered during surface discoloration and rolling processing of the flat conductor, there is a difficulty in that a pretreatment process consisting of a pickling process and a water washing process is essential.

본 발명은 상기와 같이 종래의 평각 도체로의 제조 과정에서 필수적으로 수반되었던 전처리 공정을 배제하면서도 평각 도체 표면의 산화 주석층의 형성을 줄일 수 있고, 오염 물질로 인한 주석 도금층의 불균일한 형성을 줄일 수 있도록 상기 평각 도체(110)를 제조하는데 사용되는 모재로 1차 주석 도금된 환형 선재를 이용하는 것을 특징으로 한다.The present invention can reduce the formation of the tin oxide layer on the surface of the flat conductor, while eliminating the pretreatment process that was essential in the manufacturing process of the conventional flat conductor as described above, and reduce the non-uniform formation of the tin plating layer due to contaminants. In order to be able to manufacture the flat conductor 110, it is characterized in that using the primary tin-plated annular wire rod.

본 발명에 따른 평각 도체(110)는 1차 주석 도금된 환형 선재를 압연 가공하여 형성되어 표면에 1차 주석 도금막(121)이 형성되어 있다. 이는 평각 도체(110)에 1차 주석 도금막(121)이 형성되어 있기 때문에 상기 주석 도금막(122)을 형성하기 위한 주석 용융 도금 공정 이전에 평각 도체(110) 표면의 활성화가 불필요하고, 이 후, 주석 용융 도금 공정을 통해 형성되는 주석 도금막(122)과 유사한 녹는점을 갖는 성분의 물질이기 때문에 별도의 전처리 공정 없이 곧바로 주석 도금막(122)을 형성할 수 있게 된다.The flat conductor 110 according to the present invention is formed by rolling a primary tin plated annular wire rod to form a primary tin plated film 121 on a surface thereof. Since the primary tin plating film 121 is formed on the flat conductor 110, the surface of the flat conductor 110 is unnecessary before the tin hot dip plating process for forming the tin plate film 122. Afterwards, since the material has a melting point similar to that of the tin plating film 122 formed through the tin hot-dip plating process, the tin plating film 122 may be immediately formed without a separate pretreatment process.

상기 주석 도금막(122)은 상기 평각 도체(110) 표면에 주석(Sn) 또는 주석합금을 주성분으로 하는 물질을 도금하여 형성된다. 주석 도금막(122)은 전해 도금 방법 또는 용융 도금 방법을 이용하여 형성할 수 있으나, 주로 용융 도금 방법을 이용하여 형성된다.The tin plating film 122 is formed by plating a material containing tin (Sn) or a tin alloy as a main component on the surface of the flat conductor 110. The tin plating film 122 may be formed using an electrolytic plating method or a hot dip plating method, but is mainly formed using a hot dip plating method.

본 발명에서는 상기 주석 도금막(122)이 형성될 평각 도체(110) 표면에 1차 도금막(121)이 형성되어 있기 때문에 별도의 전처리 공정 없이 곧바로 용융 도금 방법에 의해 주석 도금막(122)을 형성할 수 있다. 이는 주석 도금막(122) 형성을 위한 용융된 주석이 수용된 도금조에 상기 평각 도체(110)를 디핑하더라도 평각 도체(110)의 표면의 1차 주석 도금막(121)이 구리와 주석 도금액의 직접적인 접촉을 근본적으로 차단하여 도금 과정에서 구리 성분이 주석 도금액 내에 확산되는 것을 방지할 수 있어 주석 도금액의 변성에 대한 우려를 없앨 수 있다. 또한, 전처리 공정을 배제할 수 있기 때문에 이 과정에서 부착될 수 있는 오염물질에 의한 주석 도금액의 오염을 근본적으로 해결 가능하므로, 주석 도금 품질에 영향을 크게 미치는 인자들을 제거할 수 있게 된다.In the present invention, since the primary plating film 121 is formed on the surface of the flat conductor 110 on which the tin plating film 122 is to be formed, the tin plating film 122 is directly formed by a hot dip plating method without a separate pretreatment process. Can be formed. This is because the primary tin plating film 121 on the surface of the flat conductor 110 is in direct contact with copper and the tin plating liquid even when the flat conductor 110 is dipped in a plating bath containing molten tin for forming the tin plating film 122. By fundamentally blocking the copper component can be prevented from being diffused in the tin plating liquid during the plating process, thereby eliminating the concern about the modification of the tin plating liquid. In addition, since the pretreatment process can be eliminated, the contamination of the tin plating liquid by the contaminants that can be attached in this process can be fundamentally solved, and thus, factors that greatly affect the tin plating quality can be removed.

이하에서는 태양전지 모듈용 리본 와이어의 제조방법에 대하여 도 2를 참조하여 설명하기로 한다.Hereinafter, a method of manufacturing a ribbon wire for a solar cell module will be described with reference to FIG. 2.

본 발명에 따른 태양전지 모듈용 리본 와이어의 제조방법은, 먼저, 단계(S10)에서, 1차적으로 주석이 도금된 환형 선재를 준비한다. 그런 다음, 단계(S20)에서, 태양전지 셀과의 부착 면적을 넓히기 위한 형태적 특성을 부여하기 위해 1차 주석 도금된 환형 선재를 압연 가공하여 평각 형태를 갖는 평각 도체(110)를 형성한다. 이 때, 상기 평각 도체(110)는 사전에 1차적으로 주석이 도금된 환형 선재를 압연 가공하였기 때문에 그 표면에 1차 주석 도금막(121)이 형성되어 있다.In the method for manufacturing a ribbon wire for a solar cell module according to the present invention, first, in step S10, a ring-shaped wire rod is primarily prepared with tin. Then, in step S20, the primary tin-plated annular wire is rolled to form a flat conductor 110 having a flat shape in order to give a morphological characteristic for widening an attachment area with the solar cell. At this time, since the flat conductor 110 has been rolled the annular wire rod firstly tin-plated in advance, a primary tin plated film 121 is formed on the surface thereof.

본 발명에서는 상기 평각 도체(110) 표면에 1차 도금막(121)이 형성되어 있기 때문에 별도의 전처리 공정(S25)을 배제하고 곧바로 주석 도금막(122)을 형성할 수 있다.In the present invention, since the primary plating film 121 is formed on the surface of the flat conductor 110, the tin plating film 122 may be formed immediately without the separate pretreatment step S25.

단계(S30)에서, 상기 평각 도체(110)의 표면에 용융 도금 방법을 이용하여 주석 도금막(122)을 형성하여 태양전지 모듈용 리본 와이어(100)를 제조한다.In step S30, a tin plating film 122 is formed on the surface of the flat conductor 110 by using a hot dip plating method to manufacture a ribbon wire 100 for a solar cell module.

이상과 같이, 본 발명은 비록 한정된 실시예와 도면에 의해 설명되었으나, 본 발명은 이것에 의해 한정되지 않으며 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에 의해 본 발명의 기술사상과 아래에 기재될 특허청구범위의 균등범위 내에서 다양한 수정 및 변형이 가능함은 물론이다.While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. It will be understood that various modifications and changes may be made without departing from the scope of the appended claims.

100 : 태양전지 모듈용 리본 와이어
110 : 평각 도체 121 : 1차 주석 도금막
122 : 주석 도금막100: ribbon wire for solar cell module
110: flat conductor 121: primary tin plating film
122: tin plated film

Claims (7)

태양전지 모듈용 리본 와이어에 있어서,
평각 형태의 평각 도체와, 상기 평각 도체의 표면에 형성된 주석 도금막을 포함하고,
상기 평각 도체는 1차 주석 도금된 환형 선재를 모재로 하여 형성되는 것을 특징으로 하는 태양전지 모듈용 리본 와이어.In the ribbon wire for a solar cell module,
A flat conductor having a flat shape, and a tin plating film formed on a surface of the flat conductor,
The flat conductor is a ribbon wire for a solar cell module, characterized in that the primary tin-plated annular wire as a base material. 제1항에 있어서,
상기 평각 도체는 상기 1차 주석 도금된 환형 선재를 압연 가공하여 형성되는 것을 특징으로 하는 태양전지 모듈용 리본 와이어.The method of claim 1,
The flat conductor is a ribbon wire for a solar cell module, characterized in that formed by rolling the primary tin plated annular wire. 제1항에 있어서,
상기 주석 도금막은 상기 1차 주석 도금막 상에 2차적으로 도금하여 형성되는 것을 특징으로 하는 태양전지 모듈용 리본 와이어.The method of claim 1,
The tin plating film is a ribbon wire for a solar cell module, characterized in that formed on the secondary tin plating film by secondary plating. 제3항에 있어서,
상기 주석 도금막과 1차 주석 도금막은 유사한 녹는점을 갖는 성분으로 이루어지는 것을 특징으로 하는 태양전지 모듈용 리본 와이어.The method of claim 3,
The tin plated film and the primary tin plated film is a ribbon wire for a solar cell module, characterized in that consisting of a component having a similar melting point. 태양전지 모듈용 리본 와이어의 제조방법에 있어서,
1차 주석 도금된 환형 선재를 준비하는 단계;
상기 1차 주석 도금된 환형 선재를 압연 가공하여 평각 도체를 형성하는 단계;
상기 평각 도체 표면에 주석 도금막을 형성하는 단계;를 포함하는 것을 특징으로 하는 태양전지 모듈용 리본 와이어의 제조방법.In the manufacturing method of the ribbon wire for solar cell modules,
Preparing a primary tin plated annular wire;
Rolling the primary tin plated annular wire to form a flat conductor;
Forming a tin plated film on the surface of the flat conductor; Method of manufacturing a ribbon wire for a solar cell module comprising a. 제5항에 있어서,
상기 주석 도금막은 상기 1차 주석 도금막 상에 2차적으로 도금하여 형성되는 것을 특징으로 하는 태양전지 모듈용 리본 와이어의 제조방법.The method of claim 5,
The tin plating film is a method of manufacturing a ribbon wire for a solar cell module, characterized in that the secondary tin plating film formed by secondary plating. 제6항에 있어서,
상기 주석 도금막과 1차 주석 도금막은 유사한 녹는점을 갖는 성분으로 이루어지는 것을 특징으로 하는 태양전지 모듈용 리본 와이어의 제조방법.The method of claim 6,
The tin plating film and the primary tin plating film is a method of manufacturing a ribbon wire for a solar cell module, characterized in that consisting of a component having a similar melting point.
KR1020110017280A 2011-02-25 2011-02-25 Ribbon wire for solar cell module and manufacturing method thereof KR20120097820A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101417676B1 (en) * 2013-09-02 2014-07-10 박두식 Ribbon machining roller for solar cell and method for manufacturing therof
KR20160137060A (en) * 2015-05-22 2016-11-30 엘에스전선 주식회사 Circular wire for solar cell module
KR20230076427A (en) * 2021-11-24 2023-05-31 주식회사 제이에이치머티리얼즈 Black bus bar and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101417676B1 (en) * 2013-09-02 2014-07-10 박두식 Ribbon machining roller for solar cell and method for manufacturing therof
KR20160137060A (en) * 2015-05-22 2016-11-30 엘에스전선 주식회사 Circular wire for solar cell module
KR20230076427A (en) * 2021-11-24 2023-05-31 주식회사 제이에이치머티리얼즈 Black bus bar and manufacturing method thereof

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