KR20120062813A - Bonding capillary - Google Patents

Bonding capillary Download PDF

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Publication number
KR20120062813A
KR20120062813A KR1020127007378A KR20127007378A KR20120062813A KR 20120062813 A KR20120062813 A KR 20120062813A KR 1020127007378 A KR1020127007378 A KR 1020127007378A KR 20127007378 A KR20127007378 A KR 20127007378A KR 20120062813 A KR20120062813 A KR 20120062813A
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KR
South Korea
Prior art keywords
bonding
bottle neck
capacitor
damping
diameter dimension
Prior art date
Application number
KR1020127007378A
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Korean (ko)
Inventor
마사테루 와다
마모루 사쿠라이
유이치 요시이
타케시 우치무라
Original Assignee
토토 가부시키가이샤
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Publication of KR20120062813A publication Critical patent/KR20120062813A/en

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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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    • B23K20/10—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding
    • B23K20/103—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating making use of vibrations, e.g. ultrasonic welding using a roller
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  • Engineering & Computer Science (AREA)
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  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

The bonding capacitor according to the present invention has a first cylindrical portion mechanically fixed to a bonding apparatus, a cone portion provided on the side for bonding the first cylindrical portion, and a bottle neck portion provided on the side for bonding the cone portion. A damping having a diameter dimension between the cone portion and the bottle neck portion that is smaller than the diameter dimension of the end portion of the cone-side bonding side and larger than the diameter dimension of the end portion of the bottle-neck portion opposite the bonding side. Characterized in that the installation.
In the wire bonding of copper wire, the bonding capacitor which can suppress generation | occurrence | production of mechanical damage to an aluminum electrode or a semiconductor element can be implement | achieved in the state which bonded strength is ensured.

Description

Bonding Capitol {BONDING CAPILLARY}

The present invention generally relates to a bonding capacitor used when wiring with fine metal wires in order to obtain electrical conduction between an electrode formed in a semiconductor element and a lead frame, and in particular, the material of the fine metal wire is copper or copper alloy. It relates to suitable bonding capacities in the case.

In the conventional wire bonding using gold for fine metal wires, the bonding capacitor increases the load for pressing the metal fine wires to the aluminum electrode or the lead frame for the purpose of shortening the bonding cycle, and also applies the power of the ultrasonic wave applied to the bonding capacitor. There is a tendency for firm bonding strength to be obtained even if the bonding is performed at a high speed to make it strong (see Non-Patent Document 1, for example).

In such a case, there was a risk of mechanical damage to the aluminum electrode or the semiconductor element itself due to the stress at the time of bonding.

In recent years, attempts have been made to use copper, which is less expensive than gold as a material for fine metal wires, and since copper is harder than gold, it is possible to increase the bonding load and the ultrasonic power to bond at high speed. There is a problem that it is easy to cause damage.

In addition, when gold wire is used, damage to an aluminum electrode or a semiconductor element can be suppressed by adjusting the bond load (bonding load) or the power of ultrasonic waves to limit the amplitude of no-load at the tip of the bonding capacitor to a certain range. (For example, refer patent document 1).

Also in this case, when the copper wire is used, the bond load must be strengthened beyond the limit range described in Patent Literature 1 in order to obtain a constant distortion shape of the copper wire tip, and in order to suppress mechanical damage to the aluminum electrode or the semiconductor element, It was necessary to drastically reduce the power of in accordance with the bond load.

However, in the market, a number of bonding devices optimized for gold wire have already been introduced, and it is common to use a conventional bonding device optimized for gold wire for wire bonding of copper wire, and the conventional bonding capacities used for gold wire and copper wire In combination, it is difficult to set the optimum ultrasonic power to a stable oscillation range only by adjusting the power of the ultrasonic oscillator under a strongly set bond load in order to obtain a constant crushed shape. There is a problem that it is transmitted and causes mechanical damage.

Moreover, in the bonding wire for gold wires, the bonding capacitor which ensured the bottleneck height sufficient in order to prevent interference with the wire of an integrated chip is proposed (refer patent document 2).

In the bonding capacitor disclosed in Patent Literature 2, if the bottle neck height is excessively high, shearing is broken, the two-stage high bottle neck type is used to secure the height for avoiding wire contact. In addition, by providing a step between the second bottle neck portion and the straight portion, and aiming at the doubled effect of the ultrasonic transmission, the amplitude at the bonding capillary tip can be increased even at a low bond load and a low ultrasonic power compared with the conventional one. Tensile strength and shear strength can be increased.

However, in the case of the technique disclosed in this Patent Document 2, even if the shear strength of the bonded portion increases due to the increase in the amplitude of the bonding capillary tip, the local vertical stress acting on the aluminum electrode or the semiconductor element from the bonding capillary tip increases accordingly. As a result, there is a problem that the possibility of mechanical damage to the aluminum electrode or the semiconductor element also increases. In particular, in the wire bonding using copper wire, this tendency becomes remarkable because copper is harder than gold and bond load conditions are different.

Japanese Patent No. 3086158 (claim 1, Fig. 1) Japanese Patent Publication No. 2007-150225 (Fig. 4)

 Japanese Society of Mechanical Engineers 62, 595, Paper No. 95-1149, March 1996

Embodiment of this invention is made | formed in order to solve the said problem, so that even if wire bonding of copper wire is performed with the existing bonding apparatus optimized for gold wire, the damage of an aluminum electrode or a semiconductor element by excessive ultrasonic power transmission does not arise. It is to provide a bonding capital.

1st invention has a 1st cylindrical part mechanically fixed to the bonding apparatus, the cone part provided in the side which bonds the said 1st cylinder part, and the bottle neck part provided in the side which bonds the said cone part, The said cone part Between the bottle neck portion and a damping portion having a diameter dimension smaller than the diameter dimension of the end portion of the conical portion on which the bonding is performed and larger than the diameter dimension of the end portion on the opposite side of the bottle neck portion to the bonding side; It is a bonding capacitor characterized by the above-mentioned.

Since the damping part is provided in this bonding capacitor, excessive inclination of a bottle neck part can be suppressed. Therefore, bonding without mechanical damage to an aluminum electrode or a semiconductor element becomes possible.

In this case, even when the wire bonding of copper wire is performed by the existing bonding apparatus optimized for gold wire, the damage of an aluminum electrode or a semiconductor element by the excessive ultrasonic power transmission can be suppressed.

Further, in the second invention, in the first invention, the damping portion has a rigidity higher than that of the bottle neck portion and lower than the rigidity of the first cylindrical portion.

According to this bonding capacitor, it can suppress more that excessive deformation generate | occur | produces in the front end side of a bonding capacitor. That is, excessive inclination of the bottle neck part can be suppressed more.

In the third invention, the diameter of the damping portion in the first invention or the second invention is φ 0.3 mm or less, which is a bonding capacitor.

According to this bonding capacitor, generation | occurrence | production of excessive and local vertical stress to an aluminum electrode or a semiconductor element can be suppressed more. Moreover, by setting it as the damping part which has such a diameter dimension, excessive inclination of a bottle neck part can be suppressed more.

Moreover, in 4th invention, in any one of 1st invention-3rd invention, the length of the said damping part is 0.1 mm or more and 0.5 mm or less, It is a bonding capacitor characterized by the above-mentioned.

According to this bonding capacitor, generation | occurrence | production of excessive and local vertical stress to an aluminum electrode or a semiconductor element can be suppressed more. Moreover, by setting it as the damping part which has such a length dimension, excessive inclination of a bottle neck part can be suppressed more.

(Effects of the Invention)

According to the embodiment of the present invention, there is an effect that a bonding capacitor capable of suppressing the occurrence of mechanical damage to an aluminum electrode or a semiconductor element can be realized in a state in which bonding strength is secured in copper wire bonding.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram which shows the bonding capacitor in one Example of this invention.
It is a schematic enlarged view which shows the tip shape of the bonding capacitor in one Example of this invention.
3 is an analysis diagram for illustrating the vibration behavior of the bonding capital. Fig. 3 (a) shows the bonding capacities according to Comparative Example 1, and Fig. 3 (b) shows the bonding capacities according to the embodiment of the present invention.
4 is an analytical diagram for illustrating the local vertical stress occurring in the joint portion.
5 is a photograph illustrating damage of an aluminum splash and a semiconductor device. 5 (a) is a scanning electron micrograph of the junction portion. FIG. 5B is a scanning electron micrograph of the surface of a semiconductor element provided under the aluminum electrode.
6 is a graph for illustrating the vertical stress occurring in the bonded portion.
7 is a schematic diagram illustrating a bonding capacitor according to Comparative Example 1. FIG.
It is a schematic enlarged view which shows the tip shape of the bonding capacitor by the comparative example 1.
9 is a schematic diagram illustrating a bonding capacitor according to Comparative Example 2. FIG.
It is a schematic enlarged view which shows the tip shape of the bonding capacitor by the comparative example 2.
It is a schematic enlarged view which shows the tip shape of the bonding capacitor which concerns on Example 1. FIG.
It is a schematic enlarged view which shows the tip shape of the bonding capacitor which concerns on Example 7. FIG.
It is a schematic enlarged view which shows the tip shape of the bonding capacitor which concerns on Example 4. FIG.
14 is a graph for illustrating an aluminum splash amount.
15 is a diagram for illustrating measurement data of an aluminum splash amount.
16 is a graph for illustrating ball shear strength.
17 is a diagram for illustrating measurement data of ball shear strength.

MEANS TO SOLVE THE PROBLEM The present inventors acquired the knowledge that the amplitude behavior of the bonding capacitor in a wire bonding process differs by the structure of the front-end | tip part of a bonding capacitor.

Further, by conducting stress analysis and practical performance evaluation, knowledge regarding the configuration of the tip portion of the bonding capacitor suitable for suppressing mechanical damage to the aluminum electrode or the semiconductor element was obtained.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this invention is illustrated, referring drawings. In addition, the same code | symbol is attached | subjected to the same component in each figure, and detailed description is abbreviate | omitted suitably.

BRIEF DESCRIPTION OF THE DRAWINGS It is a schematic diagram which shows the bonding capacitor which concerns on one Embodiment of this invention.

The bonding capital 1 according to the embodiment of the present invention includes a first cylindrical portion 23 having a diameter for mechanically fixing the bonding apparatus, a cone portion 22 connected to the damping portion 25, The bottle neck part 21 for bonding to a desired position and avoiding the adjacent fine metal wire which has been wired is provided, and the front end part 24 is provided in the front end surface of the bottle neck part 21. As shown in FIG.

That is, as shown in FIG. 1, the bonding capacitor 1 which concerns on this embodiment is equipped with the 1st cylindrical part 23, the cone part 22, the damping part 25, and the bottle neck part 21. As shown in FIG.

Moreover, the inside of the bonding capacitor 1 is formed so that the hole for penetrating a metal fine wire may penetrate in an axial direction.

The first cylindrical portion 23 is mechanically fixed to the bonding apparatus. Therefore, the 1st cylindrical part 23 has the diameter dimension which can be fixed to a bonding apparatus mechanically.

The conical part 22 is provided in the side (front end side of the bonding capacitor 1) which bonds the 1st cylindrical part 23. As shown in FIG. In addition, the cone portion 22 has a truncated cone shape in which the diameter dimension becomes smaller (cross-sectional area becomes smaller) as the tip portion 24 side becomes, and the diameter dimension of the end portion on the side connected with the first cylindrical portion 23 becomes the first. It is substantially the same as the diameter dimension of the cylindrical part 23.

The damping portion 25 is provided between the cone portion 22 and the bottle neck portion 21. Further, the damping portion 25 has a diameter dimension smaller than the diameter dimension of the end portion on the side of the conical portion 22 bonding, and larger than the diameter dimension of the end portion on the opposite side to the side on which the bottleneck portion 21 is bonded. have. That is, the diameter dimension of the damping portion 25 is smaller than the diameter dimension of the tip end portion 24 side of the cone portion 22, and is larger than the diameter dimension of the end portion opposite to the tip end portion 24 side of the bottle neck portion 21. have.

The damping portion 25 may be higher than the rigidity of the bottle neck portion 21 and lower than the rigidity of the first cylindrical portion 23.

The bottle neck part 21 is provided in the side which bonds the cone part 22. As shown in FIG. Moreover, the bottle neck part 21 has a diameter dimension which can wire-bond to a predetermined joining position, avoiding the metal thin wire of the neighboring wire which is already wired. Moreover, the front end surface of the bottle neck part 21 is made into the front end part 24. As shown in FIG.

By reducing the outer diameter of the bottle neck portion 21 of the bonding capital 1, the pitch of the bond position (bonding position) is small, for example, 50 micrometers or less, and it can respond to high density wire bonding.

That is, if the diameter of the bottle neck portion 21 is reduced, even if the spacing of the joining positions is narrow (when high-density wire bonding is performed), it is possible to suppress the interference between the neighboring metal wire already wired and the bottle neck portion 21. Can be.

It is a schematic enlarged view which shows the tip shape of the bonding capacitor which concerns on one Embodiment of this invention.

In addition, FIG. 2 enlarges the part A in FIG.

Between the cone portion 22 and the bottle neck portion 21, an attenuation portion 25 is provided as an embodiment which has an effect of suppressing excessive and local vertical stresses to an aluminum electrode or a semiconductor element generated by ultrasonic vibration. It is.

That is, by providing the attenuation part 25, generation | occurrence | production of the excessive local stress in an aluminum electrode or a semiconductor element can be suppressed. In addition, details regarding the generation of excessive and local vertical stresses will be described later.

The damping section 25 has a damping section length 26 and a damping section diameter 27.

That is, the axial length of the damping part 25 is set as the damping part length 26, and the diameter dimension is set as the damping part diameter 27. As shown in FIG.

The damping part diameter 27 is formed small compared with the diameter dimension of the lower part connected with the damping part 25 of the cone part 22. As shown in FIG. The damping portion diameter 27 is formed larger than the diameter of the tip portion 24.

That is, as described above, the attenuation portion diameter 27 (diameter dimension of the attenuation portion 25) is smaller than the diameter dimension of the tip portion 24 side of the cone portion 22, and the tip portion 24 of the bottle neck portion 21. It is larger than the diameter dimension of the edge part on the opposite side to a side.

Thus, by providing the damping part 25 which is at least thinner than the 1st cylindrical part 23, the effect which suppresses the vertical stress with respect to the aluminum electrode or the semiconductor element which generate | occur | produces by the ultrasonic vibration transmitted to the bonding capacitor 1 is effective. Can be obtained. The tip portion 24 also vibrates by ultrasonic vibration, but the damping portion 25 is provided between the bottle neck portion 21 and the cone portion 22 to control the amplitude behavior of the entire bonding capacitor 1 and to bond bonding. The vertical direction of the tip (tip 24) of the claw 1 can be suppressed. Therefore, localized concentrated stress acting in the vertical direction with respect to the aluminum electrode or the semiconductor element can be reduced.

In addition, the local concentrated stress in the vertical direction with respect to the aluminum electrode or the semiconductor element can be reduced, and more uniform vertical stress can be generated in the entire contact surface between the aluminum electrode and the ball formed at the end of the metal thin wire. . Therefore, the generation efficiency of friction energy can be improved in the whole between a ball and an aluminum electrode in a wire bonding process. Therefore, the bonding shear strength can be kept high. As a result, the problem that the aluminum electrode or the semiconductor element is peeled off by mechanical damage can be solved while maintaining the bonding strength between the tip of the metal thin wire and the aluminum electrode.

Although the thing which has the damping part diameter 27 was illustrated as the damping part 25, the truncated cone shape which becomes small in diameter from the cone part 22 to the bottle neck part 21 is not suitable in a cylindrical shape, either.

That is, although the cylindrical shape whose diameter dimension is the damping part diameter 27 was illustrated as a shape of the external appearance of the damping part 25, it is not limited to this. For example, it can also be set as the truncated cone shape by which the diameter dimension becomes small (a cross-sectional area becomes small) from the cone part 22 side to the bottle neck part 21 side.

In addition, an oval shape, a polygonal column shape, or a polygonal pyramid shape is suitable as the external shape of the damping portion 25.

Here, the attenuation part 25 is further demonstrated.

According to the findings obtained by the present inventors, the amplitude behavior of the bonding capacitor in the wire bonding process varies depending on the configuration of the tip portion of the bonding capacitor.

3 is an analysis diagram for illustrating the vibration behavior of the bonding capital. In addition, FIG.3 (a) is a case of the bonding capacities by the comparative example 1 mentioned later (refer FIG.7, FIG.8), and FIG.3 (b) is a case of the bonding capacities by the embodiment of this invention. That is, FIG. 3 (a) shows the bonding capacities according to the third embodiment described below, in the case of the bonding capacities in which the damping unit 25 is not provided similarly to the bonding capacities disclosed in Patent Literature 2. Is the case.

In addition, the amplitude behavior of the bonding capacitor was analyzed by CAE (Computer Aided Engineering) analysis. In addition, the excitation direction was made into the direction perpendicular | vertical to the axial direction of a bonding capacitor, and made amplitude 1 micrometer and frequency 120 Hz.

As can be seen from FIG. 3 (a), in the case of the bonding capacitor according to Comparative Example 1, the deformation is large at the tip side of the bonding capacitor. That is, the bottle neck part is inclined excessively.

On the other hand, as can be seen from FIG. 3 (b), in the case of the bonding capacitor according to the embodiment of the present invention, deformation at the tip end side of the bonding capacitor can be suppressed. That is, the inclination of the bottle neck part can be suppressed.

Here, the tip end of the bonding capacitor is pressed against the electrode on the 1st side through the ball formed at the end of the fine metal wire. Alternatively, the distal end portion of the bonding capacitor is pressed against the electrode on the 2nd side through the thin metal wire.

Therefore, when the deformation | transformation on the front end side of a bonding capacitor becomes large, there exists a possibility that it may mechanically damage an electrode or the semiconductor element provided in the lower layer of an electrode. In particular, when the electrode on the 1st side is an aluminum electrode, the influence of deformation on the tip side of the bonding capacitor becomes remarkable. In addition, when the metal thin wire is a copper wire, the hardness is higher than that of the gold wire, and thus the effect of deformation on the tip side of the bonding capacitor becomes more remarkable.

In this case, when the deformation at the front end side of the bonding capacitor becomes large, there is a fear that the local vertical stress acting on the aluminum electrode or the semiconductor element becomes excessive.

4 is an analytical diagram for illustrating the local vertical stress occurring in the joint portion.

In addition, FIG. 4 analyzes the local vertical stress which arises when joining through the ball formed in the edge of a metal fine wire by CAE analysis.

As shown in FIG. 4, when the deformation | transformation in the front end side of a bonding capacitor becomes large and the bottle neck part 21 inclines greatly, a large vertical stress locally generate | occur | produces in the peripheral edge (circumferential edge of a ball) of a joining part. In this case, compressive stress is generated on the right side in FIG. 4, and tensile stress is generated on the left side in FIG. 4. In addition, since the bonding capacitor is excited in the left-right direction in FIG. 4, the compressive stress and the tensile stress are alternately generated.

When such a locally large vertical stress occurs, there is a concern that a so-called aluminum splash may occur in the aluminum electrode or damage may occur in the semiconductor device.

5 is a photograph illustrating damage of an aluminum splash and a semiconductor device.

5 (a) is a scanning electron microscope (SEM) photograph of the junction portion. FIG. 5B is a scanning electron micrograph of the surface of a semiconductor element provided under the aluminum electrode.

When aluminum splash as shown in FIG. 5 (a) occurs, there exists a possibility that it may short-circuit with the adjacent electrode. In addition, since the aluminum electrode also has a function of protecting the semiconductor element provided in the lower layer, there is a fear that the protective action of the semiconductor element is reduced.

In addition, if a large vertical stress is locally generated at the peripheral edge (the peripheral edge of the ball) of the bonded portion, damage as shown in Fig. 5B may occur on the surface of the semiconductor element.

Therefore, in the embodiment of the present invention, the damping portion 25 is provided between the cone portion 22 and the bottle neck portion 21 to suppress the occurrence of excessive and local vertical stress.

6 is a graph for illustrating the vertical stress occurring in the bonded portion.

In addition, the vertical axis | shaft of FIG. 6 has shown the vertical direction stress, and the horizontal axis | shaft has shown the position in a junction part. In this case, 0 (zero) on the horizontal axis is the center position of the joined portion (center position of the pressed ball portion).

In addition, B in FIG. 6 is a case of the bonding capacitor by the comparative example 1 mentioned later, C in FIG. 6 is a case of the bonding capacitor by embodiment of this invention. That is, in the case of B in FIG. 6, in the case of the bonding capacities in which the damping unit 25 is not provided in the same manner as in the bonding capacities disclosed in Patent Document 2, the C in FIG. to be.

As can be seen from FIG. 6, according to the bonding capacitor according to the embodiment of the present invention, the vertical stress generated at the peripheral edge (the peripheral edge of the ball) of the joined portion can be greatly reduced. Moreover, the vertical stress which generate | occur | produces in the whole area of a junction part can also be reduced.

Next, examples of the bonding capacitor according to the embodiment of the present invention will be described.

(Example)

Table 1 puts together the comparison of the Example and the comparative example of the bonding capacitor which concerns on embodiment of this invention.

Figure pct00001

(Comparative Example 1)

The comparative example 1 is a case of the bonding capacitor which does not have the damping part 25 like the bonding capacitor disclosed by patent document 2. As shown in FIG.

7 is a schematic diagram illustrating a bonding capacitor according to Comparative Example 1. FIG.

It is a schematic enlarged view which shows the tip shape of the bonding capacitor by the comparative example 1.

8 enlarges the part D in FIG.

As shown in FIG. 7, the bonding capacitor according to Comparative Example 1 includes the first cylindrical portion 13, the conical portion 12, and the bottle neck portion 11. Moreover, the front end surface of the bottle neck part 11 becomes the front end part 14. As shown in FIG. That is, the attenuation part is not provided in the bonding capacitor by the comparative example 1.

In the shape of the conventional bonding capacities shown in FIGS. 7 and 8, the ball in the bonding capacitor having a bottle neck in which the diameter of the tip portion 14 is 0.075 mm and the length of the bottle neck portion 11 is 0.150 mm. Shear strength of 18.91 gf was sufficient, but damage was observed on the surface of the semiconductor element. Moreover, the maximum value of the stress which generate | occur | produces in a vertical direction is analyzed, and the maximum stress value at this time is made into one. In addition, the bonding strength on the 1st side is called ball shear strength.

That is, as shown in Table 1, in the case of the bonding capacitor according to Comparative Example 1, good ball shear strength was obtained, but damage occurred on the surface of the semiconductor element. In addition, the aluminum splash also increased.

The occurrence of damage to the surface of the semiconductor element or the increase of aluminum splash is due to the excessive local vertical stress acting on the aluminum electrode or the semiconductor element.

Therefore, in order to compare with an Example, the maximum value of the stress which generate | occur | produces in the vertical direction in Comparative Example 1 was analyzed by CAE analysis, and this analysis value was made into "100%" (reference value).

(Comparative Example 2)

The comparative example 2 is a case of the bonding capacitor equivalent to the bonding capacitor disclosed by patent document 2. As shown in FIG. That is, the comparative example 2 is also the case of the bonding capacitor which does not have the damping part 25. FIG.

9 is a schematic diagram illustrating a bonding capacitor according to Comparative Example 2. FIG.

It is a schematic enlarged view which shows the tip shape of the bonding capacitor by the comparative example 2.

10 enlarges the part E in FIG.

As shown in FIG. 9, the bonding capacitor by the comparative example 2 is equipped with the 1st cylindrical part 13, the conical part 12a, and the bottle neck part 11. As shown in FIG. Moreover, the front end surface of the bottle neck part 11 becomes the front end part 14. As shown in FIG. That is, the attenuation part is not provided in the bonding capacitor by the comparative example 2. In addition, a stepped portion 103 'is provided between the first cylindrical portion 13 and the conical portion 12a.

As shown in Table 1, when the stress analysis was conducted on the bonding capacitor according to Comparative Example 2, it was found that the analysis value of the vertical stress was 153% of Comparative Example 1, but rather the vertical stress was increased. Therefore, there is a high possibility of causing damage to the surface of the semiconductor element.

(Example 1)

In one embodiment of the present invention shown in FIG. 11, the diameter dimension of the tip portion 24 is 0.075 mm, the length of the bottle neck portion 21 is 0.150 mm, and the damping portion length 26 shown in FIG. 2 is 0.100 mm. The maximum stress value in the vertical direction when the attenuation portion diameter 27 is 0.168 mm is 71.7%, and it can be seen that the vertical stress which is connected by mechanical damage to the aluminum electrode or the semiconductor element can be reduced. . In the bonding evaluation, the ball shear strength was 18.91 gf, the aluminum splash amount could be smaller than that of Comparative Example 1, and the occurrence of damage on the semiconductor element surface was not confirmed. In addition, the numerical imbalance is reduced along with the aluminum splash amount and the ball shear strength, and stable wire bonding becomes possible as compared with the conventional art.

That is, FIG. 11 is a schematic enlarged view which shows the tip shape of the bonding capacitor which concerns on Example 1. FIG.

In Example 1, the damping part length 26, the damping part diameter 27, the diameter dimension of the tip part 24, and the length of the bottle neck part 21 of the bonding capacitor 1 shown in FIG. 1, FIG. It is a case where it shows in Example 1 of the following.

In the case shown in FIG. 11, the external appearance of the damping part 25a has a truncated conical shape. Thus, when the external appearance of the damping part 25a shows the truncated conical shape, the diameter of a damping part shall be made into the diameter dimension (minimum diameter dimension) of the end surface by the bottle neck part 21 side. In the case of the damping portion 25a, the angle formed by the central axis and the ridgeline is 10 ° (20 ° in both angles).

As shown in Table 1, according to Example 1, the analysis value of the vertical stress can be 71.7% of Comparative Example 1. And the aluminum splash amount can be suppressed compared with the case of the comparative example 1. In this case, the occurrence of damage on the surface of the semiconductor element was not confirmed.

In addition, the ball shear strength can also be 18.91 gf, so that good ball shear strength can be obtained.

(Example 7)

In one embodiment of the present invention shown in FIG. 12, the diameter of the tip portion 24 is 0.075 mm, the length of the bottle neck portion 21 is 0.150 mm, and the attenuation portion length 26 shown in FIG. 2 is 0.100 mm and attenuation. The maximum stress value in the vertical direction in the aluminum electrode when the negative diameter 27 was 0.252 mm was 71.8%. In the bonding evaluation, the ball shear strength was 18.89 gf, the aluminum splash amount could be made smaller than that of the conventional comparative example, and no occurrence of aluminum electrode damage was also confirmed. Also in this embodiment, both the aluminum splash amount and the ball shear strength are smaller in numerical imbalance, and stable wire bonding is possible as compared with the prior art.

That is, FIG. 12: is a schematic enlarged view which shows the tip shape of the bonding capacitor which concerns on Example 7. FIG.

Example 7 shows the attenuation part length 26, the attenuation part diameter 27, the diameter dimension of the tip part 24, and the length of the bottle neck part 21 of the bonding capacitor 1 shown in FIG. 1, FIG. It is a case where it shows in Example 7 of the following.

In the case of FIG. 12, the external appearance of the damping part 25b has shown the shape of the truncated cone. Therefore, the damping part diameter shown in Table 1 is a diameter dimension (minimum diameter dimension) of the end surface of the bottle neck part 21 side. In the case of the damping portion 25b, the angle formed by the central axis and the ridgeline is set to 10 degrees (20 degrees on both angles).

As shown in Table 1, according to Example 7, the analysis value of the vertical stress can be 71.8% of Comparative Example 1. And the aluminum splash amount can be suppressed compared with the case of the comparative example 1. In this case, the occurrence of damage on the surface of the semiconductor element was not confirmed.

In addition, the ball shear strength can also be 18.89 gf, whereby good ball shear strength can be obtained.

In addition, as shown in Table 1, also in Example 3, Example 6, and Example 8, the analysis value of a vertical direction stress can be made small compared with the case of the comparative example 1. Moreover, also in Example 3, aluminum splash amount can be suppressed compared with the case of the comparative example 1. FIG. In addition, in the case of Example 2-Example 6 and Example 8, generation | occurrence | production of the damage on the surface of a semiconductor element was not confirmed. In addition, also in Example 3, a ball shear strength can be set to 18.00 gf, and favorable ball shear strength can be obtained.

In this case, the external appearance of the damping part of Example 2, Example 3, and Example 5-Example 8 showed the shape of a truncated cone. Therefore, the damping part diameter shown in Table 1 is a diameter dimension (minimum diameter dimension) of the end surface of the bottle neck part 21 side. In addition, in the case of these attenuation portions, the angle formed between the central axis and the ridgeline is set to 10 degrees (20 degrees on both angles).

On the other hand, the external appearance of the damping part of Example 4 has shown the column shape.

It is a schematic enlarged view which shows the tip shape of the bonding capacitor which concerns on Example 4. FIG.

Thus, when the external appearance of the damping part 25c shows the cylinder shape, the diameter of the damping part shown in Table 1 becomes a diameter dimension of the damping part 25c.

As described above, the diameter of the damping portion is preferably set to φ 0.3 mm or less.

Moreover, it is preferable that the length of attenuation part shall be 0.1 mm or more and 0.5 mm or less.

14 is a graph for illustrating an aluminum splash amount.

15 is a diagram for illustrating measurement data of an aluminum splash amount. 14 is a graph based on the data illustrated in FIG. 15. "Ave" represents an average value, "Max" represents a maximum value, "Min" represents a minimum value, and "σ" represents a deviation.

16 is a graph for illustrating ball shear strength.

17 is a diagram for illustrating measurement data of ball shear strength. 16 is a graph based on the data illustrated in FIG. 17. "Ave" represents an average value, "Max" represents a maximum value, "Min" represents a minimum value, and "σ" represents a deviation.

As shown to FIG. 14, FIG. 15, according to Example 1 and Example 7, compared with the case of the comparative example 1, aluminum splash amount can be reduced and the nonuniformity (deviation) of aluminum splash amount can be made small. .

As shown in Figs. 16 and 17, according to Example 1 and Example 7, the ball shear strength can be made almost equal as compared with the case of Comparative Example 1, and the nonuniformity (deviation) of the ball shear strength is reduced. can do.

That is, this means that stable wire bonding becomes possible compared with the case of the comparative example 1.

Since the bonding neck 21 is not required to be folded during use in the bonding capital, ceramics having a physical property value of hardness of 1900 Hv or more and bending strength of 1100 MPa or more are preferable in this embodiment, for example, aluminum oxide in a weight ratio. Ceramic materials containing 75% or more are preferred.

(Industrial availability)

As described in detail above, according to the present invention, even when the wire bonding of the copper wire is performed with the existing bonding apparatus optimized for gold wire, the bonding capacities that do not cause damage to the aluminum electrode or the semiconductor element due to excessive ultrasonic power transfer. The industrial merit is enormous.

11: bottle neck part 12: conical part
12a: cone portion 13: first cylindrical portion
14: tip 21: bottle neck
22: cone portion 23: the first cylindrical portion
24: tip portion 25: attenuation portion
25a to 25c: Damping section 26: Damping section length
27: diameter of damping part

Claims (4)

A first cylindrical portion mechanically fixed to the bonding apparatus,
A cone portion provided on the side for bonding the first cylindrical portion,
A bottle neck portion provided on the bonding side of the cone portion;
An attenuation portion having a diameter dimension between the cone portion and the bottle neck portion having a diameter dimension smaller than the diameter dimension of the end portion on the bonding side of the cone portion and larger than the diameter dimension on the side opposite to the bonding side of the bottle neck portion. Bonding capillary characterized in that the installation. The method of claim 1,
And the damping portion has a rigidity higher than that of the bottle neck portion and lower than that of the first cylindrical portion. The method of claim 1,
The diameter of the said damping part is a bonding capacitor characterized by being φ0.3 mm or less. The method of claim 1,
The length of the said damping part is 0.1 mm or more and 0.5 mm or less, The bonding capillary characterized by the above-mentioned.
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JP4941268B2 (en) * 2007-12-17 2012-05-30 富士通株式会社 Wire bonding method and wire bonding apparatus

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