KR20120052789A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
KR20120052789A
KR20120052789A KR1020100114097A KR20100114097A KR20120052789A KR 20120052789 A KR20120052789 A KR 20120052789A KR 1020100114097 A KR1020100114097 A KR 1020100114097A KR 20100114097 A KR20100114097 A KR 20100114097A KR 20120052789 A KR20120052789 A KR 20120052789A
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South Korea
Prior art keywords
light emitting
layer
substrate
semiconductor layer
emitting device
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KR1020100114097A
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Korean (ko)
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임우식
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엘지이노텍 주식회사
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Priority to KR1020100114097A priority Critical patent/KR20120052789A/en
Publication of KR20120052789A publication Critical patent/KR20120052789A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: A light emitting device is provided to form a concave part without an additional process by forming the concave part on a silicon base substrate in a process of forming a light extracting pattern. CONSTITUTION: A substrate(101) includes a first surface and a second surface. A light emitting structure(135) is formed on the first surface of the substrate and includes a first conductive semiconductor layer(110), an active layer(120), and a second conductive semiconductor layer(130). A first electrode(112) is formed on the first conductive semiconductor layer. A light transmission conductive layer(132) and a second electrode(134) are formed on a second conductive semiconductor layer.

Description

[0001] LIGHT EMITTING DEVICE [0002]

The present disclosure relates to a light emitting device.

Light emitting diodes (LEDs) are a type of semiconductor device that converts electrical energy into light. The light emitting diode has advantages of low power consumption, semi-permanent life, fast response speed, safety and environmental friendliness compared to conventional light sources such as fluorescent and incandescent lamps.

Therefore, many researches are being made to replace the existing light sources with light emitting diodes, and the use of light emitting devices as light sources for lighting devices such as various lamps, liquid crystal displays, electronic signs, and street lamps that are used indoors and outdoors is increasing. to be.

Embodiments provide a light emitting device capable of improving reliability.

The light emitting device according to the embodiment includes a substrate having a first surface and a second surface opposite to each other; And an active layer disposed on the first surface of the substrate and disposed between the first conductive semiconductor layer, the second conductive semiconductor layer, and the first conductive semiconductor layer and the second conductive semiconductor layer. It includes a light emitting structure. The light emitting structure is repeatedly disposed with a space on the substrate, and a recess is formed in at least a portion of the second surface corresponding to the area on the first surface between the light emitting structures.

The light emitting device according to the embodiment includes a substrate having a first surface and a second surface opposite to each other; And an active layer disposed on the first surface of the substrate and disposed between the first conductive semiconductor layer, the second conductive semiconductor layer, and the first conductive semiconductor layer and the second conductive semiconductor layer. It includes a light emitting structure. The substrate is thicker in the center portion than in the side end portion.

In the light emitting device according to the present embodiment, recesses are formed in the substrate to correspond to the plurality of chip regions, thereby simplifying the chip separation process. In addition, it is possible to reduce the failure of the light emitting device to improve the reliability.

Here, the substrate may include a silicon base substrate and a GaN layer (gallium nitride layer) to form a recess in the silicon base substrate in a process of forming a light extraction pattern on the light emitting structure. Thereby, the concave portion can be formed by a simple process without any additional process.

1 is a cross-sectional view of a light emitting device according to the first embodiment.
2 to 5 are cross-sectional views showing steps of a method of manufacturing a light emitting device according to the first embodiment.
6 is a cross-sectional view of a light emitting device according to one modification.
7 is a cross-sectional view of a light emitting device according to another modification.
8 is a cross-sectional view of a light emitting device according to the second embodiment.
9 to 17 are cross-sectional views illustrating steps of a method of manufacturing a light emitting device according to the second embodiment.
18 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiment.
19 is a view illustrating a backlight unit including a light emitting device package according to an embodiment.
20 is a view illustrating a lighting unit including a light emitting device package according to an embodiment.

In the description of embodiments, each layer, region, pattern, or structure may be “on” or “under” the substrate, each layer, region, pad, or pattern. Substrate formed in ”includes all formed directly or through another layer. Criteria for the top / bottom or bottom / bottom of each layer will be described with reference to the drawings.

The thickness or the size of each layer (film), region, pattern or structure in the drawings may be modified for clarity and convenience of explanation, and thus does not entirely reflect the actual size.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a cross-sectional view of a light emitting device according to an embodiment.

Referring to FIG. 1, a light emitting device 100 according to an embodiment may be disposed on a substrate 101, a first surface (hereinafter, “top surface”) of the substrate 101, and may include a first conductive semiconductor layer 110, The light emitting structure 135 includes an active layer 120 and a second conductivity type semiconductor layer 130. And a first electrode 112 positioned on the first conductive semiconductor layer 110, a light transmissive conductive layer 132 and a second electrode 134 positioned on the second conductive semiconductor layer 130. Concave portions 103a and 103b are formed at both ends of the second surface (hereinafter referred to as “lower surface”) of the substrate 101. This will be described in more detail as follows.

The substrate 101 may be a growth substrate on which the light emitting structure 135 is grown. For example, the substrate 101 may include at least one of sapphire (Al 2 O 3 ), Si, SiC, GaAs, GaN, ZnO, MgO, GaP, InP, and Ge. However, the embodiment is not limited thereto, and the substrate 101 made of various materials may be used.

A buffer layer (not shown) may be formed on the top surface of the substrate 101. The buffer layer is a layer for alleviating the difference in lattice constant between the substrate 101 and the light emitting structure 135. The buffer layer is formed of any one of an AlInN / GaN stacked structure, an In x Ga 1 - x N / GaN stacked structure, and an In x Al y Ga 1- xy N / In x Ga 1-x N / GaN stacked structure. Can be. Here, 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦ 1.

In addition, the buffer layer may include an undoped semiconductor layer. Although the undoped semiconductor layer is not intentionally implanted with impurities, the undoped semiconductor layer may be a nitride layer that may have the same first conductivity type as the first conductivity-type semiconductor layer 110 positioned thereon. For example, the undoped semiconductor layer may be a GaN based semiconductor layer.

The light emitting structure 135 formed on the buffer layer may include a compound semiconductor layer of a plurality of group III-V elements. In this case, the first conductive semiconductor layer 110 is positioned on the buffer layer, the active layer 120 is positioned on the first conductive semiconductor layer 110, and the second conductive semiconductor layer 130 is disposed on the active layer 120. It can be located at

The first conductivity type semiconductor layer 110 may include a compound semiconductor of a group III-V element doped with the first conductivity type dopant. For example, the first conductivity-type semiconductor layer 110 may include an n-type semiconductor layer. The n-type semiconductor layer is an n-type dopant in a semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) doped Can be formed. For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, etc. may include n-type dopants such as Si, Ge, Sn, Se, Te, and the like. The first conductivity type semiconductor layer 110 may be formed as a single layer or a multilayer, but is not limited thereto.

The active layer 120 may be formed of any one of a single quantum well structure, a multi quantum well structure (MQW), a quantum dot structure, or a quantum line structure, but is not limited thereto.

The active layer 120 may be formed of a semiconductor material having a composition formula of In x Al y Ga 1 -x- y N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). When the active layer 120 is formed in a multi-quantum well structure, the active layer 120 may be formed by stacking a plurality of well layers and a plurality of barrier layers. For example, the well layer / barrier layer of the active layer 120 may have a pair structure of one or more of InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs (InGaAs) / AlGaAs, GaP (InGaP) / AlGaP. It may be formed, but is not limited thereto. The well layer may be formed of a material having a lower band gap than the band gap of the barrier layer.

A clad layer (not shown) doped with an n-type or p-type dopant may be formed on and / or under the active layer 120, and the clad layer may include an AlGaN layer or an InAlGaN layer.

The second conductivity type semiconductor layer 130 may include a compound semiconductor of a group III-V element doped with the second conductivity type dopant. For example, the second conductivity-type semiconductor layer 130 may include a p-type semiconductor layer. The p-type semiconductor layer is a p-type dopant doped into the semiconductor material having a compositional formula of In x Al y Ga 1 -x- y N (0≤x≤1, 0 ≤y≤1, 0≤x + y≤1) Can be formed. For example, GaN, AlN, AlGaN, InGaN, InN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP, AlGaInP, etc. may be formed by including p-type dopants such as Mg, Zn, Ca, Sr, Br and the like. The second conductivity-type semiconductor layer 130 may be formed as a single layer or a multilayer, but is not limited thereto.

In the above description, the first conductive semiconductor layer 110 includes an n-type semiconductor layer and the second conductive semiconductor layer 130 includes a p-type semiconductor layer. However, the embodiment is not limited thereto. Accordingly, the first conductivity type semiconductor layer 110 may include a p-type semiconductor layer and the second conductivity type semiconductor layer 130 may include an n-type semiconductor layer. In addition, another n-type or p-type semiconductor layer (not shown) may be formed under the second conductivity-type semiconductor layer 130. Accordingly, the light emitting structure 135 may have at least one of np, pn, npn, and pnp junction structures. In addition, the doping concentrations of the dopants in the first conductive semiconductor layer 110 and the second conductive semiconductor layer 130 may be uniform or non-uniform. That is, the structure of the light emitting structure 135 may be variously modified, the embodiment is not limited thereto.

The transmissive conductive layer 132 is positioned on the second conductivity type semiconductor layer 130. The transparent conductive layer 132 is, for example, indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), or IGTO (IGTO). It may be formed of at least one of indium gallium tin oxide (AZO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), ZnO, RuO x , TiO x , or IrO x .

In the region in which the active layer 120 and the second conductive semiconductor layer 130 are removed, the first electrode 112 is formed on the first conductive semiconductor layer 110. The second electrode 134 is formed on the transparent conductive layer 132.

The first electrode 112 and / or the second electrode 134 is a metal having excellent conductivity, for example, Au, Pd, Pt, Ru, Re, Mg, Zn, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Al, Ni, Cu, WTi, V or an alloy thereof may be included.

For example, the first electrode 112 and / or the second electrode 134 may include an ohmic layer formed in contact with the light emitting structure 135 and an electrode layer formed on the ohmic layer for ohmic contact with the light emitting structure 135. It may be formed to include. For example, the ohmic layer may include Cr, Al, V, Ti, or the like. The electrode layer may be formed by sequentially stacking a barrier layer including Ni, Al, a metal layer including Cu, a barrier layer including Ni, Al, and the like, and a wire bonding layer including Au and the like. However, the embodiment is not limited thereto, and the electrode layer may be formed of a single layer such as a W layer, a WTi layer, a Ti layer, an Al layer, or an Ag layer.

In this embodiment, concave portions 103a and 103b are formed at both ends of the lower surface of the substrate 101, respectively, so that the thickness T1 of the center portion is thicker than the thickness T2 of the side end portion. Accordingly, the chip separation process of separating the light emitting device (see reference numeral 102 of FIG. 5) having the plurality of light emitting structures 135 into the plurality of light emitting devices 100 may be simplified and the reliability of the light emitting device 100 may be improved. Can be. This will be described in more detail later with reference to FIGS. 2 to 5.

In this case, the ratio of the thickness T2 of the side end portion to the thickness T1 of the center portion may be 0.9 or less. If this ratio exceeds 0.9, it may be difficult to perform the chip separation process by applying pressure only without laser scribing or sawing. The depths of the recesses 103a and 103b may be 100 μm to 500 μm, and the maximum widths of the recesses 103a and 103b may be 10 μm to 50 μm. However, the embodiment is not limited thereto, and the numerical value may vary depending on the design matter.

In the present exemplary embodiment, the side surfaces of the recesses 103a and 103b are formed to be inclined with respect to the upper and lower surfaces of the substrate 101, but the exemplary embodiments are not limited thereto.

Hereinafter, a method of manufacturing a light emitting device according to an embodiment will be described with reference to FIGS. 2 to 5. 2 to 5 are cross-sectional views illustrating steps of a method of manufacturing a light emitting device in FIG. 1. For the sake of simplicity and clarity, detailed descriptions of the same or very similar parts to those described above will be omitted, and only different parts will be described in detail.

As shown in FIG. 2, the light emitting structure 135 is formed on the substrate 101.

The light emitting structure 135 may be formed by sequentially growing the first conductivity type semiconductor layer 110, the active layer 120, and the second conductivity type semiconductor layer 130 on the growth substrate 101.

The light emitting structure 135 may include, for example, metal organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), It may be formed using a method such as molecular beam epitaxy (MBE), hydride vapor phase epitaxy (HVPE). However, this is not limitative.

Meanwhile, a buffer layer (not shown) and / or an undoped nitride layer (not shown) may be formed between the light emitting structure 135 and the growth substrate 101 to alleviate the lattice constant difference.

Subsequently, as shown in FIG. 3, the opening 114 is formed by mesa etching for removing a portion of the second conductivity-type semiconductor layer 130, the active layer 120, and the first conductivity-type semiconductor layer 110. . A portion of the first conductivity type semiconductor layer 110 is exposed by the opening 114. As such mesa etching, dry etching may be applied.

Subsequently, as shown in FIG. 4, the transparent conductive layer 132 and the second electrode 134 are formed on the second conductive semiconductor layer 130, and the first conductive type is exposed through the opening 114. The first electrode 112 is formed on the semiconductor layer 110. The transparent conductive layer 132, the second electrode 134, and the first electrode 112 may be formed by sputtering or vapor deposition.

In the present exemplary embodiment, the transmissive conductive layer 132, the second electrode 134, and the first electrode 112 are formed after the mesa etching. However, various modifications may be possible and this is also within the scope of the exemplary embodiment.

 Subsequently, as shown in FIG. 5, the recess 103 is formed on the lower surface of the substrate 101, and the light emitting device 102 in which the plurality of unit chip regions are defined is separated by a chip separation process. A plurality of light emitting elements 100 can be manufactured. Here, the unit chip regions may be defined by at least a portion of the light emitting structure 135 spaced apart from each other by the opening 114.

In this case, the recess 103 is formed in the light emitting device 102 in which the plurality of unit chip regions are defined, corresponding to the boundary of the unit chip regions, that is, the breaking line BL. As a result, the thickness T2 at the portion where the recess 103 is formed is thinner than the thickness T1 at the portion where the recess 103 is not formed. Therefore, if the recessed portion 103 is formed more fragile than the recessed portion 103 is not formed, the external force can be easily separated from the chip. That is, in this embodiment, the chip can be easily separated by a simple breaking process of applying external force without laser scribing or sawing.

That is, the light emitting structures 135 are repeatedly disposed with a space on the substrate, and the recesses 103 are formed in at least a portion of the lower surface corresponding to the upper surface region between the light emitting structures 135, thereby providing a simple breaking process. Chip can be separated.

As such, since the present embodiment does not require a laser scribing process or a sawing process requiring expensive equipment, the process cost can be reduced. In addition, physical and thermal damages by laser scribing or sawing process and contamination by by-products can be reduced, thereby minimizing the defects of the light emitting device (reference numeral 100 of FIG. 1) separated into the unit chip region, thereby ensuring reliability. Can improve. However, embodiments are not limited thereto, and chip separation may be performed using a laser scribing process or a sawing process. Even when using a laser scribing or sawing process, the effect of minimizing physical and thermal damage can be obtained.

In this case, the ratio of the thickness T2 of the portion where the recess 103 is formed to the thickness T1 in the portion where the recess 103 is not formed may be 0.9 or less. In the drawings and description, the side end portion is illustrated and described as having a predetermined thickness T2, but the exemplary embodiment is not limited thereto. Accordingly, the substrate 101 may not exist at the portion where the recess 103 is formed, which also belongs to the embodiment.

The depth of the recess 103 may be 100 μm to 500 μm, and the maximum width W of the recess 103 may be 20 μm to 100 μm. This is a range for smoothly separating the chip by the recess 103 while stably forming the recess 103, but embodiments are not limited thereto, and these values may be changed according to design matters.

In the present exemplary embodiment, the recess 103 is formed after the first electrode 112, the transparent electrode layer 132, and the second electrode 134 are formed. However, the exemplary embodiment is not limited thereto. Accordingly, the concave portion 103 may be formed in a step before forming the first electrode 112, the light transmissive electrode layer 132, and the second electrode 134, or between the forming processes thereof.

The concave portion 103 may be formed by etching. In the present exemplary embodiment, the side surface of the recess 103 has a trapezoidal shape with a predetermined inclination angle (for example, 135 °) with respect to the upper and lower surfaces of the substrate 101 by using wet etching, but the embodiment is limited thereto. It doesn't happen. Accordingly, as shown in FIG. 6, the side surface of the recess 105 may be perpendicular to the upper and lower surfaces of the substrate 101 using dry etching. In addition, as shown in FIG. 7, a recess having a first portion 107a having a side etched by dry etching and having a side surface formed in an orthogonal direction and a second portion 107b having a side etched by wet etching having a side surface formed therein ( 107 may be formed.

Hereinafter, the light emitting device and the manufacturing method thereof according to the second embodiment will be described with reference to FIGS. 8 to 17. For the purpose of simplicity and clarity, detailed descriptions of the same or very similar parts as those of the first embodiment will be omitted, and only different parts will be described in detail.

8 is a cross-sectional view of a light emitting device according to the second embodiment.

Referring to FIG. 8, the light emitting device 104 according to the embodiment includes a conductive support substrate 175, a light emitting structure 135 that generates light on the conductive support substrate 175, and a light emitting structure 135 on the light emitting structure 135. The first electrode 112 is included in the. The present embodiment differs from the first embodiment in that the conductive support substrate 175 functions as a second electrode by using the conductive support substrate 175 including a conductive material as the substrate.

Between the conductive support substrate 175 and the light emitting structure 135, the bonding layer 170, the reflective layer 160, the ohmic layer 150, the current blocking layer (CBL) 145, and the protection member 140. Etc., the passivation layer 180 may be formed on the side surface of the light emitting structure 135. This will be described in more detail as follows.

The conductive support substrate 175 may support the light emitting structure 135 and provide power to the light emitting structure 135 together with the first electrode 112. The conductive support substrate 175 may include a conductive material or a semiconductor material. For example, the conductive support substrate 175 may include at least one of Cu, Au, Ni, Mo, Cu-W, Si, Ge, GaAs, ZnO, SiC, SiGe, GaN.

In this case, the conductive support substrate 175 may include a silicon (Si) base substrate 175a and a gallium nitride (GaN) layer 175b formed on the silicon base substrate 175a. Then, the conductive support substrate 175 may have a coefficient of thermal expansion and lattice constant similar to that of the light emitting structure 135. Accordingly, even when the contraction and expansion are repeated by heat generated when the light emitting device 104 is driven, the light emitting structure 135 and the conductive support substrate 175 may be effectively prevented from being peeled off. Therefore, structural reliability can be improved.

The gallium nitride layer 175b may be directly grown on the silicon base substrate 175a. The gallium nitride layer 175b thus grown may include a plurality of dislocations. In this case, when power is applied to the light emitting element 104, the charges can be easily moved by the potential. As a result, the electrical characteristics of the light emitting device 104 can be improved.

In addition, the silicon base substrate 175a may be etched together in the process of forming the light extraction pattern 115 by the etching process on the light emitting structure 135. That is, the concave portions 173a and 173b may be formed in the conductive support substrate 175 without additional process, which is advantageous in the process.

In this case, the recesses 173a and 176b may be formed in the silicon base substrate 175a with the silicon base substrate 175a left by a predetermined thickness T3. However, the embodiment is not limited thereto. That is, the gallium nitride layer 175b may be exposed because the silicon base substrate 175a does not exist in the portions where the recesses 173a and 173b are formed, and the recesses 173a and 173b are inside the gallium nitride layer 175b. It is also possible to be formed.

The bonding layer 170 may be formed on the conductive support substrate 175. The bonding layer 170 may be formed under the reflective layer 160 and the protection member 140 as a bonding layer. The bonding layer 170 is in contact with the reflective layer 160, the end of the ohmic layer 150, and the protective member 140 to enhance the adhesion between the reflective layer 160, the ohmic layer 150, and the protective member 140. Can give

The bonding layer 170 includes a barrier metal or a bonding metal. For example, the bonding layer 170 may include at least one of Ti, Au, Sn, Ni, Cr, Ga, In, Bi, Cu, Al, Si, Ag, Ta, and alloys thereof.

The reflective layer 160 may be formed on the bonding layer 170. The reflective layer 160 may be generated by the light emitting structure 135 to reflect the light toward the reflective layer 160, thereby improving the luminous efficiency of the light emitting device 104.

For example, the reflective layer 160 may include at least one of Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf, or an alloy thereof. In addition, the reflective layer 160 may be formed in multiple layers using the above-described metal or alloy and a light-transmitting conductive material such as ITO, IZO, IZTO, IAZO, IGTO, IGZO, AZO, ATO, and GZO. For example, the reflective layer 160 may include a stacked structure of IZO / Ni, AZO / Ag, IZO / Ag / Ni, AZO / Ag / Ni, Ag / Cu, Ag / Pd / Cu, and the like.

The ohmic layer 150 may be formed on the reflective layer 160. The ohmic layer 150 is in ohmic contact with the second conductive semiconductor layer 130 so that power can be smoothly supplied to the light emitting structure 135. The ohmic layer 150 may include ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, gallium zinc oxide (GZO), IrO x , RuO x , RuO x / ITO, In, Zn, Sn, Ni, Ag , Pt, Ni / IrO x / Au, or Ni / IrO x / Au / ITO can be implemented in a single layer or multiple layers.

As described above, the upper surface of the reflective layer 160 is illustrated in contact with the ohmic layer 150. However, it is also possible for the reflective layer 160 to contact the protective member 140, the current blocking layer 145, or the light emitting structure 135.

A current blocking layer 145 may be formed between the ohmic layer 150 and the second conductive semiconductor layer 130. An upper surface of the current blocking layer 145 may contact the second conductive semiconductor layer 130, and a lower surface and a side surface of the current blocking layer 145 may contact the ohmic layer 150.

The current blocking layer 145 may be formed such that at least a portion of the current blocking layer 145 overlaps with the first electrode 112 in a vertical direction, thereby concentrating current to the shortest distance between the first electrode 112 and the conductive support substrate 175. The light emission efficiency of the light emitting device 104 may be improved by alleviating the phenomenon.

The current blocking layer 145 may be formed of a material having electrical insulation, a material having a lower electrical conductivity than the reflective layer 160 or the bonding layer 170, or a material forming Schottky contact with the second conductive semiconductor layer 130. Can be formed. For example, the current blocking layer 145 includes ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , TiO x , TiO 2 , Ti, Al, or Cr.

As described above, the ohmic layer 150 contacts the bottom and side surfaces of the current blocking layer 145, but is not limited thereto. Therefore, the ohmic layer 150 and the current blocking layer 145 may be spaced apart from each other, or the ohmic layer 150 may contact only the side surface of the current blocking layer 145. Alternatively, the current blocking layer 145 may be formed between the reflective layer 160 and the ohmic layer 150.

The protection member 140 may be formed in the circumferential region of the upper surface of the bonding layer 170 described above. That is, the protection member 140 may be formed in a circumferential region between the light emitting structure 135 and the bonding layer 170, thereby forming a ring shape, a loop shape, a frame shape, and the like. A portion of the protection member 140 may overlap the light emitting structure 135 in the vertical direction.

The protection member 140 may increase the distance between the bonding layer 170 and the active layer 120 at the side, thereby reducing the possibility of the electrical short between the bonding layer 170 and the active layer 120. In addition, the protection member 140 may also prevent moisture or the like from penetrating into the gap between the light emitting structure 135 and the conductive support substrate 175.

In addition, the protection member 140 may prevent the occurrence of an electrical short in the chip separation process. In more detail, in the case of isolation etching to separate the light emitting structure 135 into the unit chip region, the fragments generated in the bonding layer 170 are separated from the second conductive semiconductor layer 130 and the active layer. An electrical short may occur between the layers 120 or between the active layer 120 and the first conductivity-type semiconductor layer 110, and the protection member 140 may prevent the electrical short. Accordingly, the protection member 140 may be formed of a material that does not break or cause fragments during the isolation etching, or an insulating material that does not cause an electrical short even if a very small portion or a small amount of fragments is generated.

The protective member 140 may be formed of a material having electrical insulation, a material having a lower electrical conductivity than the reflective layer 160 or the bonding layer 170, or a material forming Schottky contact with the second conductive semiconductor layer 130. Can be formed.

However, the embodiment is not limited thereto, and the protection member 140 may be made of metal, which also belongs to the scope of the present invention.

For example, the protective member 140 may include ITO, IZO, IZTO, IAZO, IGZO, IGTO, AZO, ATO, ZnO, SiO 2 , SiO x , SiO x N y , Si 3 N 4 , Al 2 O 3 , It may include at least one of TiO x , TiO 2 , Ti, Al or Cr.

The light emitting structure 135 may be formed on the ohmic layer 150 and the protection member 140. Sides of the light emitting structure 135 may be inclined by an isolation etching that divides the light emitting structure 135 into unit chip regions.

The second conductive semiconductor layer 130 is positioned on the ohmic layer 150 and the protection member 140, the active layer 120 is positioned on the second conductive semiconductor layer 130, and the first conductive semiconductor layer ( 110 may be located on the active layer 120.

The light extraction pattern 115 may be formed on an upper surface of the light emitting structure 135, more precisely, an upper surface of the first conductive semiconductor layer 130. The light extraction pattern 115 may improve the light extraction efficiency of the light emitting device 104 by minimizing the amount of light totally reflected from the surface. The light extraction pattern 115 may have a random shape and arrangement, or may be formed to have a desired shape and arrangement.

For example, the light extraction pattern 115 may be formed by arranging a photonic crystal structure having a period of 50 nm to 3000 nm. The photonic crystal structure can efficiently extract light of a specific wavelength region to the outside by an interference effect or the like.

In addition, the light extraction pattern 115 may be formed to have various shapes such as a cylinder, a polygonal pillar, a cone, a polygonal pyramid, a truncated cone, a polygonal truncated cone, but is not limited thereto.

The first electrode 112 may be formed on the light emitting structure 135, more specifically, the first conductivity type semiconductor layer 110. One surface of the first conductivity-type semiconductor layer 110 on which the first electrode 112 is formed may be an N-face surface.

The passivation layer 180 may be formed on the top and side surfaces of the first conductive semiconductor layer 110 and the top surface of the protection member 140. However, it is not limited thereto.

Hereinafter, a method of manufacturing the light emitting device 104 according to the second embodiment will be described with reference to FIGS. 9 to 17. 9 to 17 are cross-sectional views illustrating steps of a method of manufacturing a light emitting device according to the second embodiment.

As shown in FIG. 9, the light emitting structure 135 is formed on the substrate 101, which is a growth substrate.

Subsequently, as illustrated in FIG. 10, the protection member 140 may be selectively formed on the light emitting structure 135 corresponding to the unit chip region. The protection member 140 may be formed around the unit chip area by using the patterned mask. The protective member 140 may be formed using various deposition methods such as electron beam (E-beam) deposition, sputtering, and PECVD.

Subsequently, as illustrated in FIG. 11, the current blocking layer 145 may be formed on the second conductivity-type semiconductor layer 130. The current blocking layer 145 may be formed using a mask pattern.

10 and 11 illustrate that the protective member 140 and the current blocking layer 145 are formed in separate processes, but the protective member 140 and the current blocking layer 145 are formed of the same material to form a single process. It is also possible to form at the same time. For example, after forming the SiO 2 layer on the second conductivity-type semiconductor layer 130, the protective member 140 and the current blocking layer 145 may be simultaneously formed using a mask pattern.

Next, as shown in FIG. 12, the ohmic layer 150 and the reflective layer 160 may be sequentially formed on the second conductivity-type semiconductor layer 130 and the current blocking layer 145.

The ohmic layer 150 and the reflective layer 160 may be formed by, for example, any one of electron beam (E-beam) deposition, sputtering, and PECVD.

Subsequently, as illustrated in FIG. 13, the conductive support substrate 175 is bonded to the structure of FIG. 5 through the bonding layer 170. The bonding layer 170 may be in contact with the reflective layer 160, the end of the ohmic layer 150, and the protective member 140 to strengthen the adhesive force therebetween.

Subsequently, as shown in FIG. 14, the substrate 101 is removed from the light emitting structure 135. 14 illustrates the structure shown in FIG. 13 upside down.

The substrate 101 may be removed by a laser lift off method or a chemical lift off method.

Subsequently, as illustrated in FIG. 15, the light emitting structure 135 is isolated by a plurality of light emitting structures 135 by isolation etching according to the unit chip region. For example, the isolation etching may be performed by a dry etching method such as inductively coupled plasma (ICP).

Next, as shown in FIG. 16, the passivation layer 180 is formed on the protection member 140 and the light emitting structure 135, and the passivation layer 180 is exposed to expose the top surface of the first conductivity-type semiconductor layer 110. Optionally remove).

Subsequently, as shown in FIG. 17, the light extraction pattern 115 is formed on the upper surface of the first conductivity-type semiconductor layer 110 to improve light extraction efficiency, and the recessed portion is formed on the lower surface of the conductive support substrate 175. 173). The recess 173 may be formed at a boundary of the unit chip region, that is, a portion where the cutting line BL is located. The light extraction pattern 115 and the recess 173 may be formed by a wet etching process or a dry etching process.

For example, when the conductive support substrate 175 includes the silicon base substrate 175a and the gallium nitride layer 175b, the silicon base substrate 175a and the first conductivity type semiconductor layer 110 may be potassium hydroxide (KOH). Can be etched simultaneously. That is, since the light extraction pattern 115 and the recess 173 may be formed at the same time, the recess 173 may be formed without additional process.

In the drawings, the side of the recess 173 is inclined to the top and bottom of the conductive support substrate 175 as an example, but the embodiment is not limited thereto, and the side of the recess is conductive as shown in FIGS. 6 and 7. It may also include a portion orthogonal to the top and bottom surfaces of the support substrate 175.

A plurality of light emitting devices 104 of FIG. 8 may be manufactured by forming the first electrode 112 on the light emitting device and performing a chip separation process to separate the unit chip region.

Hereinafter, a light emitting device package including a light emitting device according to the present embodiment will be described with reference to FIG. 18. 18 is a cross-sectional view of a light emitting device package including a light emitting device according to the embodiment.

Referring to FIG. 18, the light emitting device package according to the embodiment includes a package body 30, a first electrode layer 31 and a second electrode layer 32 provided on the package body 30, and the package body 30. The light emitting device 100 is installed at and electrically connected to the first and second electrode layers 31 and 32, and a molding member 40 surrounding the light emitting device 100.

The package body 30 may be formed of a resin such as polyphthal amide (PPA), liquid crystal polymer (LCP), polyamide 9T (polyamid9T, PA9T), metal, photo sensitive glass, sapphire ( Al 2 O 3 ), ceramics, and printed circuit boards (PCBs). However, the present embodiment is not limited to these materials.

The package body 30 is formed with a cavity 34 whose top is opened. The sides of the cavity 34 may be perpendicular or inclined to the bottom surface of the cavity 34.

In the package body 30, a first electrode layer 31 and a second electrode layer 32 electrically connected to the light emitting device 100 are disposed. The first electrode layer 31 and the second electrode layer 32 may be formed of a metal plate having a predetermined thickness, and another metal layer may be plated on this surface. The first electrode layer 31 and the second electrode layer 32 may be made of a metal having excellent conductivity. Such metals include titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), and the like. There is this.

The first and second electrode layers 31 and 32 provide power to the light emitting device 100. In addition, the first and second electrode layers 31 and 32 may serve to increase light efficiency by reflecting light generated from the light emitting device 100, and discharge heat generated from the light emitting device 100 to the outside. It can also play a role.

The light emitting device 100 is positioned in the cavity 34 while being electrically connected to the first electrode layer 31 and the second electrode layer 32. The light emitting device 100 may be electrically connected to the first electrode layer 31 and the second electrode layer 32 by any one of a wire method, a flip chip method, or a die bonding method. In the embodiment, the light emitting device 100 is electrically connected to the first electrode layer 31 through the wire 50 and directly connected to the second electrode layer 32.

In the present exemplary embodiment, the light emitting device 100 is positioned in the cavity 34 of the package body 30, but the exemplary embodiment is not limited thereto. Accordingly, the package body 30 may not include the cavity 34, and the light emitting device 100 may be positioned on the upper surface of the body 30.

The molding member 40 may be formed while surrounding the light emitting device 100 to protect the light emitting device 100. In addition, the molding member 40 may include a phosphor to change the wavelength of light emitted from the light emitting device 100.

However, the embodiment is not limited thereto, and the phosphor may be located in the coating layer disposed on the molding member 40 or in the coating layer surrounding the light emitting device 100. Alternatively, the phosphor may be located in a lens (not shown) located on the molding member 40.

As the phosphor, various materials such as garnet-based phosphors, silicate-based phosphors, nitride-based phosphors, and oxynitride-based phosphors may be used. As the phosphor, a single phosphor may be used, or a plurality of phosphors may be mixed and used.

In the drawings and the above description, the light emitting device 100 of FIG. 1 is applied as an example. However, the embodiment is not limited thereto, and the light emitting device of FIGS. 6 to 8 may be applied.

The light emitting device package of the above-described embodiment may function as a lighting system such as a backlight unit, an indicator device, a lamp, and a street lamp. This will be described with reference to FIGS. 19 and 20.

19 is a view illustrating a backlight unit including a light emitting device package according to an embodiment. However, the backlight unit 1100 of FIG. 19 is an example of an illumination system, and is not limited thereto.

Referring to FIG. 19, the backlight unit 1100 may be disposed on a bottom cover 1140, a light guide member 1120 disposed in the bottom cover 1140, and at least one side or a bottom surface of the light guide member 1120. The light emitting module 1110 may be included. In addition, a reflective sheet 1130 may be disposed under the light guide member 1120.

The bottom cover 1140 may be formed in a box shape having an upper surface open to accommodate the light guide member 1120, the light emitting module 1100, and the reflective sheet 1130, and may be formed of metal or resin. Can be. However, the present invention is not limited thereto.

The light emitting module 1110 may include a plurality of light emitting device packages 600 mounted on the substrate 700. The plurality of light emitting device packages 600 provides light to the light guide member 1120.

As shown, the light emitting module 1110 may be disposed on at least one of the inner surfaces of the bottom cover 1140, thereby providing light toward at least one side of the light guide member 1120. .

However, the light emitting module 1110 may be disposed under the light guide member 1120 in the bottom cover 1140 to provide light toward the bottom surface of the light guide member 1120. This may be variously modified according to the design of the backlight unit 1100.

The light guide member 1120 may be disposed in the bottom cover 1140. The light guide member 1120 may surface-light the light provided from the light emitting module 1110 and guide the light guide member to a display panel (not shown).

The light guide member 1120 may be, for example, a light guide panel (LGP). The light guide plate may be, for example, an acrylic resin such as polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), a cyclic olefin copolymer (COC), or a polycarbonate (PC). It may be formed of one of polyethylene naphthalate resin.

The optical sheet 1150 may be disposed above the light guide member 1120.

The optical sheet 1150 may include at least one of, for example, a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet. For example, the optical sheet 1150 may be formed by stacking a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet. In this case, the diffusion sheet 1150 evenly diffuses the light emitted from the light emitting module 1110, and the diffused light may be focused onto a display panel (not shown) by the light collecting sheet. At this time, the light emitted from the light collecting sheet is light that is randomly polarized. The luminance rising sheet can increase the degree of polarization of light emitted from the light collecting sheet. The light collecting sheet can be, for example, a horizontal or / and vertical prism sheet. In addition, the brightness rising sheet may be, for example, a dual brightness enhancement film. In addition, the fluorescent sheet may be a translucent plate or film containing phosphors.

The reflective sheet 1130 may be disposed under the light guide member 1120. The reflective sheet 1130 may reflect light emitted through the lower surface of the light guide member 1120 toward the exit surface of the light guide member 1120. The reflective sheet 1130 may be formed of a resin having good reflectance, for example, PET, PC, poly vinyl chloride, resin, or the like, but is not limited thereto.

20 is a view illustrating a lighting unit including a light emitting device package according to an embodiment. However, the lighting unit 1200 of FIG. 20 is an example of a lighting system, but is not limited thereto.

Referring to FIG. 20, the lighting unit 1200 includes a case body 1210, a light emitting module 1230 installed in the case body 1210, and a connection terminal installed in the case body 1210 and receiving power from an external power source. 1220.

The case body 1210 is preferably formed of a material having good heat dissipation, for example, may be formed of a metal or a resin.

The light emitting module 1230 may include a substrate 700 and at least one light emitting device package 600 mounted on the substrate 700.

The substrate 700 may be a circuit pattern printed on the insulator, for example, a printed circuit board (PCB), a metal core PCB, a flexible PCB, a ceramic PCB, and the like. It may include.

In addition, the substrate 700 may be formed of a material that efficiently reflects light, or the surface may be formed of a color in which the light is efficiently reflected, for example, white, silver, or the like.

At least one light emitting device package 600 may be mounted on the substrate 700.

Each of the light emitting device packages 600 may include at least one light emitting diode (LED). The light emitting device may include a colored light emitting device for emitting colored light of red, green, blue or white color, and a UV light emitting device for emitting ultraviolet light (UV, UltraViolet).

The light emitting module 1230 may be arranged to have a combination of various light emitting devices to obtain color and luminance. For example, the white light emitting device, the red light emitting device, and the green light emitting device may be combined to secure high color rendering (CRI). In addition, a fluorescent sheet may be further disposed on a traveling path of light emitted from the light emitting module 1230, and the fluorescent sheet changes the wavelength of light emitted from the light emitting module 1230. For example, when the light emitted from the light emitting module 1230 has a blue wavelength band, the fluorescent sheet may include a yellow phosphor, and the light emitted from the light emitting module 1230 may be finally viewed as white light after passing through the fluorescent sheet. do.

The connection terminal 1220 may be electrically connected to the light emitting module 1230 to supply power. According to FIG. 20, the connection terminal 1220 is inserted into and coupled to an external power source in a socket manner, but is not limited thereto. For example, the connection terminal 1220 may be formed in a pin shape and inserted into an external power source, or may be connected to the external power source by wiring.

In the lighting system as described above, at least one of a light guide member, a diffusion sheet, a light collecting sheet, a luminance rising sheet, and a fluorescent sheet may be disposed on a propagation path of light emitted from the light emitting module to obtain a desired optical effect.

As described above, the illumination system may have excellent reliability by including a light emitting device package having excellent reliability.

The features, structures, effects and the like described in the foregoing embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. In addition, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

In addition, the above description has been made with reference to the embodiments, which are merely examples and are not intended to limit the invention. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiments may be modified and implemented. It is to be understood that the present invention may be embodied in many other specific forms without departing from the spirit or essential characteristics thereof.

Claims (13)

A substrate having a first side and a second side opposite to each other; And
A light emission comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer on the first surface of the substrate structure
Including,
The light emitting structure is repeatedly disposed with a space on the substrate,
And a recess formed in at least a portion of the second surface corresponding to an area on the first surface between the light emitting structures. The method of claim 1,
And a side surface of the concave portion formed to be inclined or perpendicular to the first surface of the substrate. The method of claim 1,
A light emitting device in which the substrate comprises a conductive material. The method of claim 3,
And the substrate comprises a silicon base substrate and a gallium nitride (GaN) layer formed on the silicon base substrate. The method of claim 4, wherein
The concave portion is formed on one surface of the silicon base substrate. The method of claim 1,
A light emitting element having a depth of the recessed portion of 100 µm to 500 µm and a width of the recessed portion of 20 µm to 100 µm. The method of claim 1,
The ratio of the thickness of the said board | substrate in the part in which the said recessed part was formed with respect to the thickness of the said board | substrate in the part in which the said recessed part is not formed is a light emitting element. A substrate having a first side and a second side opposite to each other; And
A light emission comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer on the first surface of the substrate structure
Including,
The substrate is light-emitting element thicker than the thickness of the center portion than the thickness of the side end portion. The method of claim 8,
The light emitting device of claim 2, wherein recesses are formed at both ends of the second surface of the substrate. The method of claim 8,
And a side surface of the concave portion formed to be inclined or perpendicular to the first surface of the substrate. The method of claim 8,
A light emitting device in which the substrate comprises a conductive material. The method of claim 11,
And the substrate comprises a silicon base substrate and a gallium nitride (GaN) layer formed on the silicon base substrate. The method of claim 12,
The concave portion is formed on one surface of the silicon base substrate.
KR1020100114097A 2010-11-16 2010-11-16 Light emitting device KR20120052789A (en)

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