KR20120047585A - Solar cell - Google Patents

Solar cell Download PDF

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Publication number
KR20120047585A
KR20120047585A KR1020100109237A KR20100109237A KR20120047585A KR 20120047585 A KR20120047585 A KR 20120047585A KR 1020100109237 A KR1020100109237 A KR 1020100109237A KR 20100109237 A KR20100109237 A KR 20100109237A KR 20120047585 A KR20120047585 A KR 20120047585A
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KR
South Korea
Prior art keywords
layer
electrode
emitter layer
solar cell
electrically connected
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KR1020100109237A
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Korean (ko)
Inventor
서명균
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삼성전자주식회사
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Priority to KR1020100109237A priority Critical patent/KR20120047585A/en
Publication of KR20120047585A publication Critical patent/KR20120047585A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

PURPOSE: A solar cell is provided to prevent a dark current from being generated by including an insulating layer between an emitter layer and a bus bar electrode. CONSTITUTION: An emitter layer(130) is formed on one side of a base layer(110). A back electrode(150) is electrically connected to the base layer. A front electrode(191) is electrically connected to the emitter layer on one side of the emitter layer. A bus bar electrode(193) is formed while being separated from the front electrode on one side of the emitter layer. An insulating layer(170) is formed between the emitter layer and the bus bar electrode.

Description

Solar cell {SOLAR CELL}

The present disclosure relates to a solar cell.

Solar cells convert solar energy into electrical energy. Solar cells are basically diodes composed of PN junctions, and are classified into various types according to materials used as light absorption layers.

The solar cell is a silicon solar cell using silicon as the light absorption layer, a compound thin film solar cell using CIGS (CuInGaSe 2 ), CIS (CuInSe 2 ) or CGS (CuGaSe 2 ), III-V group solar cell, dye-sensitized solar cell Cell, organic solar cell, and the like.

At present, researches are being actively conducted to improve the efficiency of these solar cells.

One aspect of the present invention provides a solar cell having reduced dark current and improved fill factor, open voltage (Voc) and photoelectric conversion efficiency.

Solar cell according to an aspect of the invention the base layer; An emitter layer formed on one surface of the base layer; A rear electrode electrically connected to the base layer; A front electrode electrically connected to the emitter layer on one surface of the emitter layer; A bus bar electrode formed on one surface of the emitter layer to be distinguished from the front electrode; And an insulating layer formed between the emitter layer and the busbar electrode. In this case, the front electrode and the bus bar electrode are electrically connected.

The insulating layer is an oxide including aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), titanium oxide (TiO 2 or TiO 4 ), magnesium oxide (MgO), cerium oxide (CeO 2 ), or a combination thereof. , Nitrides including aluminum nitride (AlN), silicon nitride (SiN x ), titanium nitride (TiN), or combinations thereof, aluminum oxynitride (AlON), silicon oxynitride (SiON), titanium oxynitride (TiON), or combinations thereof It may include oxynitride, magnesium fluoride (MgF 2 ), zinc sulfide (ZnS), or a combination thereof.

The insulating layer may have a thickness of about 50 nm to about 300 nm.

The insulating layer may be formed at a portion between the emitter layer and the busbar electrode.

The busbar electrode may have a portion of the busbar electrode electrically connected to the emitter layer. Specifically, the busbar electrode may be electrically connected to the emitter layer at a portion adjacent to the light receiving portion of the emitter layer. It may be connected.

An area adjacent to the insulating layer and an emitter layer of the busbar electrodes may have an area ratio of about 100: 1 to about 10: 1.

The solar cell may further include an antireflection film formed on a portion of one surface of the emitter layer where the front electrode and the bus bar electrode are not formed.

The insulating layer and the anti-reflection film may include the same material.

Other aspects of the present invention are included in the following detailed description.

A solar cell excellent in a fill factor, an open voltage Voc, and a photoelectric conversion efficiency can be provided.

1 is a top view illustrating a solar cell according to an embodiment of the present invention.
FIG. 2 is an example of a cross-sectional view of the solar cell cut in the II-II direction according to the exemplary embodiment of the present invention illustrated in FIG. 1.
3 is another example of a cross-sectional view of the solar cell according to the exemplary embodiment of the present invention illustrated in FIG. 1 in the II-II direction.
4 is a top view illustrating a solar cell according to another embodiment of the present invention.
FIG. 5 is a cross-sectional view of the solar cell cut in the V-V direction according to another exemplary embodiment of the present invention illustrated in FIG. 4.
6 is a top view illustrating a solar cell according to another embodiment of the present invention, respectively.
7 is a top view showing a solar cell according to another embodiment of the present invention, respectively.
8 is a current-voltage graph of the solar cells prepared in Example 1 and Comparative Example 1. FIG.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a portion of a layer, film, substrate, etc. is said to be "on" another component, this includes not only when the other component is "right on" but also when there is another component in the middle.

Solar cell according to an embodiment of the present invention; An emitter layer formed on one surface of the base layer; A rear electrode electrically connected to the base layer; A front electrode electrically connected to the emitter layer on one surface of the emitter layer; A bus bar electrode formed on one surface of the emitter layer to be distinguished from the front electrode; And an insulating layer formed between the emitter layer and the busbar electrode. Here, the front electrode and the bus bar electrode are electrically connected.

By including an insulating layer between the emitter layer and the busbar electrode, it is possible to prevent or reduce the generation of dark current generated in the busbar electrode. As a result, the fill factor, the open voltage Voc, and the photoelectric conversion efficiency of the solar cell including the insulating layer between the emitter layer and the bus bar electrode may be improved. Here, the dark current means a current flowing in a direction opposite to the light current by a forward bias, and the light current corresponds to the electron-hole pair formed in the base layer and the emitter layer. It means the current generated by.

First, a solar cell 100 according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3.

1 is a top view illustrating a solar cell 100 according to an embodiment of the present invention.

Referring to FIG. 1, the anti-reflection film 160 is formed on a portion where the front electrode 191 and the bus bar electrode 193 are electrically connected, and the front electrode 191 and the bus bar electrode 193 are not formed. ) Is formed.

FIG. 2 is an example of a cross-sectional view of the solar cell cut in the II-II direction according to the exemplary embodiment of the present invention illustrated in FIG. 1. 3 is another example of a cross-sectional view of the solar cell according to the exemplary embodiment of the present invention illustrated in FIG. 1 in the II-II direction.

Hereinafter, the side of the base layer that receives sunlight is called a front side, and the opposite side of the front side of the base layer is called a rear side. In addition, the following describes the positional relationship of the upper and lower centering on the base layer for convenience of description, but is not limited thereto.

The solar cell according to the embodiment of the present invention includes a base layer 110; An emitter layer 130 formed on one surface of the base layer 110; A rear electrode 150 electrically connected to the base layer 110; A front electrode 191 electrically connected to the emitter layer 130 on one surface of the emitter layer 130; A bus bar electrode 193 formed on one surface of the emitter layer 130 to be separated from the front electrode 191; And an insulating layer 170 formed between the emitter layer 130 and the bus bar electrode 193. Here, the front electrode 191 and the bus bar electrode 193 are electrically connected.

The base layer 110 may be a Group IV compound such as silicon (Si) or germanium (Ge); Group III-V compounds such as GaAs, InGaAs, GaInP, AlGaAs, InGaAsN, GaN, InGaN, GaP; Or combinations thereof, but is not limited thereto.

2 and 3 illustrate the semiconductor layer doped with p-type impurities as the base layer 110. However, the present invention is not limited thereto, and a semiconductor layer doped with n-type impurities may be used. In this case, the p-type impurity may be a Group III compound such as boron (B) or aluminum (Al); Group IIb compounds such as zinc (Zn) and cadmium (Cd); Group IV compounds such as carbon (C); Or a combination thereof, and the n-type impurity may be a Group V compound such as phosphorus (P); Group IV compounds such as silicon (Si); Group VI compounds such as selenium (Se) and tellurium (Te); Or combinations thereof. The type of the p-type impurity and the type of the n-type impurity may vary depending on the material forming the base layer 110.

When the base layer 110 is a semiconductor layer doped with p-type impurities, the separated holes can be effectively collected by the electrode. On the other hand, when the base layer 110 is a semiconductor layer doped with n-type impurities, the separated electrons can be effectively collected by the electrode.

The base layer 110 may have a thickness of about 100 nm to about 200 μm, depending on the absorption coefficient of the material. When the thickness of the base layer 110 is within the above range, it can absorb most of the sunlight in the wavelength band that the material can absorb. Specifically, the base layer 110 may have a thickness of about 500 nm to about 5 μm.

The emitter layer 130 is formed on the front surface of the base layer 110.

The emitter layer 130 may be a Group IV compound such as silicon (Si) or germanium (Ge); Group III-V compounds such as GaAs, InGaAs, GaInP, AlGaAs, InGaAsN, GaN, InGaN, GaP; Or combinations thereof, but is not limited thereto.

2 and 3 illustrate the semiconductor layer doped with n-type impurities as the emitter layer 130. However, the present invention is not limited thereto, and a semiconductor layer doped with p-type impurities may be used. The p-type impurity and the n-type impurity have been described above. The type of the p-type impurity and the type of the n-type impurity may vary depending on the material forming the emitter layer 130.

When the emitter layer 130 is a semiconductor layer doped with n-type impurities, separated electrons may be effectively collected by the electrode. On the other hand, when the emitter layer 130 is a semiconductor layer doped with p-type impurities, the separated holes can be effectively collected by the electrode.

The emitter layer 130 may have a thickness of about 10 nm to about 1 μm, but is not limited thereto.

The front electrode 191 is formed on the front surface of the emitter layer 130, and is electrically connected to the emitter layer 130. For example, the front electrode 191 may be formed by screen printing, inkjet printing, stamping printing, sputtering, e-beam evaporation, and the like having excellent conductivity such as silver (Ag) and gold (Au). It may be formed through thermal evaporation or a combination thereof.

Although not shown in FIGS. 2 and 3, before the front electrode 191 is formed, a window layer and a contact layer may be sequentially formed on the front surface of the emitter layer 130 in order. have. However, the present invention is not limited thereto, and the window layer and the contact layer may be omitted.

The window layer may include, for example, a transparent conductive material such as InGaP, AlInP, or AlGaAs doped with n-type impurities, but is not limited thereto. The description of the n-type impurity is as described above.

The window layer can prevent or mitigate a decrease in the short circuit current Jsc by preventing electron-hole recombination at the emitter layer surface.

The window layer may, for example, have a thickness of about 10 nm to about 500 nm, specifically about 20 nm to about 100 nm.

The contact layer may include, for example, a conductive material such as GaAs or InGaAs, but is not limited thereto.

The contact layer may serve to reduce contact resistance between the front electrode and the semiconductor layer.

The contact layer may, for example, have a thickness of about 50 nm to about 1 μm, specifically about 200 nm to about 500 nm.

After the front electrode 191 is formed on the contact layer, a portion of the contact layer in which the front electrode 190 is not formed may be etched and removed.

The insulating layer 170 is formed on a portion of the front surface of the emitter layer 130 where the front electrode 191 is not formed. Thereafter, a bus bar electrode is formed on the insulating layer 170. The insulating layer 170 may prevent the emitter layer 130 and the busbar electrode from being directly electrically connected to each other, or reduce the area in which the emitter layer 130 and the busbar electrode are directly electrically connected to each other. . As a result, it is possible to prevent or reduce the generation of the dark current generated in the bus bar electrode, thereby improving the filling factor, the open voltage and the photoelectric conversion efficiency of the solar cell including the insulating layer 170.

The insulating layer 170 may include an insulating material, for example, aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), titanium oxide (TiO 2 or TiO 4 ), magnesium oxide (MgO), Oxides containing cerium oxide (CeO 2 ) or combinations thereof, aluminum nitrides (AlN), silicon nitrides (SiN x ), titanium nitrides (TiN) or nitrides containing combinations thereof, aluminum oxynitrides (AlON), silicon oxynitrides (SiON), oxynitrides including titanium oxynitride (TiON) or a combination thereof, and may include magnesium fluoride (MgF 2 ), zinc sulfide (ZnS), or a combination thereof, and may be formed in a single layer or in multiple layers. Can be.

The insulating layer 170 may be formed on the entire surface of the emitter layer 130, for example, magnesium fluoride through sputtering, e-beam deposition, thermal deposition, or a combination thereof, but is not limited thereto.

The insulating layer 170 may have a thickness of about 50 nm to about 300 nm. When the thickness of the insulating layer 170 is within the range, it is possible to effectively prevent or reduce the generation of dark current in the bus bar electrode. Specifically, the insulating layer 170 may have a thickness of about 80 nm to about 150 nm.

The bus bar electrode 193 is formed on the entire surface of the insulating layer 170.

Referring to FIG. 2, the busbar electrodes 193 are all formed on the front surface of the insulating layer 170, so that the busbar electrodes 193 and the emitter layer 130 are not directly connected electrically. . In this case, dark current can be effectively prevented from occurring in the bus bar electrode 193.

Referring to FIG. 3, a part of the busbar electrode 193 is formed on the front surface of the insulating layer 170, and the other part of the busbar electrode 193 is electrically connected to the emitter layer 130. It is formed to be. Specifically, the bus bar electrode 193 is electrically connected to the emitter layer 130 at a portion of the bus bar electrode 193 adjacent to the light-receiving portion of the emitter layer 130. In this case, although some dark current is generated at a portion of the busbar electrode 193 electrically connected to the emitter layer 130, the bus bar electrode 193 is formed at the base layer 110 and the emitter layer 130. Photocurrent generated by the electron-hole pair may effectively flow through the busbar electrode 193 electrically connected to the emitter layer 130. Therefore, the solar cell 100 can flow the photocurrent well while effectively reducing the generation of the dark current. In this case, the area adjacent to the insulating layer 170 and the area adjacent to the emitter layer 130 of the bus bar electrode 193 may have an area ratio of about 100: 1 to about 10: 1.

2 and 3, the anti-reflection film 160 is formed on a portion of the front surface of the emitter layer 130 where the front electrode 190 and the bus bar electrode 193 are not formed. However, the present invention is not limited thereto, and the anti-ring film 160 may be omitted. The anti-reflection film 160 may include a material that reflects less light and has an insulating property. For example, aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), titanium oxide (TiO 2 or TiO 4 ), and magnesium oxide Oxides containing (MgO), cerium oxide (CeO 2 ) or combinations thereof, aluminum nitrides (AlN), silicon nitrides (SiN x ), titanium nitrides (TiN) or combinations thereof, aluminum nitrides (AlON) ), Silicon oxynitride (SiON), titanium oxynitride (TiON) or combinations thereof, and may include oxynitride, magnesium fluoride (MgF 2 ), zinc sulfide (ZnS), or combinations thereof, It may be formed in a plurality of layers.

The anti-reflection film 160 may be formed on the entire surface of the emitter layer 130 by, for example, sputtering, e-beam deposition, thermal deposition, or a combination thereof, but is not limited thereto.

The anti-reflection film 160 may have a thickness of, for example, about 50 nm to about 300 nm, and specifically, may have a thickness of about 80 nm to about 150 nm.

The anti-reflection film 160 may be formed on the entire surface of the base layer 110 that receives solar energy to reduce reflectance of light and increase selectivity of a specific wavelength region.

The back electrode 150 is formed under the base layer 110. The rear electrode 150 may be made of an opaque metal such as aluminum (Al), but is not limited thereto. The back electrode 150 may have a thickness of about 1 μm to about 100 μm, and specifically, may have a thickness of about 1 μm to about 10 μm.

The back electrode 150 may improve the efficiency of the solar cell by preventing the loss of light by reflecting the light passing through the base layer 110 back to the base layer 110.

Next, a solar cell 200 according to another embodiment of the present invention will be described with reference to FIGS. 4 and 5.

4 is a top view illustrating a solar cell 200 according to another embodiment of the present invention.

Referring to FIG. 4, the front electrode 291 and the busbar electrode 293 are electrically connected to each other, and an insulating layer 270 is formed.

FIG. 5 is a cross-sectional view of the solar cell cut in the V-V direction according to another exemplary embodiment of the present invention illustrated in FIG. 4.

Hereinafter, the side of the base layer that receives sunlight is called a front side, and the opposite side of the front side of the base layer is called a rear side. In addition, the following describes the positional relationship of the upper and lower centering on the base layer for convenience of description, but is not limited thereto.

Solar cell according to another embodiment of the present invention is a base layer 210; An emitter layer 230 formed on one surface of the base layer 210; A back electrode 250 electrically connected to the base layer 210; A front electrode 291 electrically connected to the emitter layer 230 on one surface of the emitter layer 230; A bus bar electrode 293 formed on one surface of the emitter layer 230 so as to be separated from the front electrode 291; And an insulating layer 270 formed in a region other than a portion where the front electrode 291 is formed on one surface of the emitter layer 230. The front electrode 291 and the bus bar electrode 293 are electrically connected to each other.

In the solar cell 200, the insulating layer 270 is not only formed between the emitter layer 230 and the busbar electrode 293, but the front electrode 291 of the emitter layer 230 is not formed. It is formed to the part which is not. Accordingly, the insulating layer 270 may serve to prevent or reduce generation of dark current from the busbar electrode 293, and may also serve as an antireflection film. As a result, it is not necessary to form an antireflection film separately, so that the process can be simplified and the economics can be improved.

Although not shown in FIG. 5, the window layer and the contact layer may be sequentially formed on the front surface of the emitter layer 230 before the front electrode 291 is formed. However, the present invention is not limited thereto, and the window layer and the contact layer may be omitted.

Unless otherwise described below, the base layer, the emitter layer, the front electrode, the insulating layer, the bus bar electrode, the back electrode, the anti-reflection film, the window layer and the contact layer will be described above. same.

In FIGS. 2, 3, and 5, the solar cell having one base layer and one emitter layer has been described as an example. However, the present invention is not limited thereto. It may be a multi-junction solar cell including a plurality.

In addition, although the structure of the solar cell has been described with reference to FIGS. 1 and 4, the present invention is not limited thereto. The solar cell according to the exemplary embodiment of the present invention may be manufactured in various structures. For example, the solar cell according to the embodiment of the present invention may also be manufactured in the structure shown in FIGS. 6 and 7. 6 and 7 are top views illustrating solar cells according to still another embodiment of the present invention, respectively.

Example

Hereinafter, the present invention will be described in more detail with reference to Examples and Comparative Examples, but the following Examples and Comparative Examples are for illustrative purposes only and are not intended to limit the present invention.

Example  1: manufacture of solar cells

Solar cells are fabricated by growing single junction GaAs on a GaAs substrate using metalorganic vapor phase epitaxy (MOVPE). At this time, the thickness of the base layer is 3.5 μm, and the emitter layer is grown to be 0.1 μm. Subsequently, a 25 nm InGaP window layer and a 400 nm GaAs contact layer are sequentially grown on the emitter layer. Subsequently, a rear electrode Au / Ag is formed on the rear surface of the base layer by e-beam evaporation, and a front electrode Ti / Au is formed on the portion of the contact layer by e-beam deposition. Form by e-beam evaporation. Subsequently, a portion of the contact layer in which the front electrode is not formed is removed by wet etching. Subsequently, an MgF 2 / ZnS insulating layer is formed to a thickness of 100 nm by using an e-beam deposition method on the portion where the contact layer is removed. Subsequently, a bus bar electrode Ag is formed on a portion of the insulating layer. In this case, the front electrode Ti / Au and the bus bar electrode Ag may be electrically connected to each other.

The size of the solar cell thus formed is 6 mm (width) x 6 mm (length), and the width of the busbar electrode is 0.5 mm, and is formed at the edge of the solar cell as shown in FIG. In this case, the light receiving area of the solar cell is 0.25 cm 2 . In this case, the insulating layer serves as an insulating layer in a portion adjacent to the busbar electrode, and serves as an antireflection film in the light receiving surface of the solar cell.

Comparative example  1: manufacture of solar cells

Solar cells are fabricated by growing single junction GaAs on a GaAs substrate using metalorganic vapor phase epitaxy (MOVPE). At this time, the thickness of the base layer is 3.5 μm, and the emitter layer is grown to be 0.1 μm. Subsequently, a 25 nm InGaP window layer and a 400 nm GaAs contact layer are sequentially grown on the emitter layer. Subsequently, a rear electrode Au / Ag is formed on the rear surface of the base layer by e-beam evaporation, a front electrode Ti / Au on a portion of the contact layer, and the contact layer The busbar electrode Ag is formed on the other part of the substrate by e-beam evaporation. In this case, the front electrode Ti / Au and the bus bar electrode Ag may be electrically connected to each other. Subsequently, a portion of the contact layer in which the front electrode and the bus bar electrode are not formed is removed by wet etching. Subsequently, an MgF 2 / ZnS anti-reflection film is formed to a thickness of 100 nm by using an e-beam deposition method on the portion where the contact layer is removed.

The size of the solar cell thus formed is 6 mm (width) x 6 mm (length), and the width of the busbar electrode is 0.5 mm, and is formed at the edge of the solar cell as shown in FIG. In this case, the light receiving area of the solar cell is 0.25 cm 2 .

Test Example  1: Evaluation of Open Voltage Characteristics

For solar cells manufactured in Example 1 and Comparative Example 1, current-voltage change was measured under conditions of AM1.5G 1sun using a WACOM Solar Simulator and a Keithley Source Meter. The measured current-voltage graph is shown in FIG. 8.

As shown in FIG. 8, the solar cell prepared in Example 1 exhibits an open voltage of 0.96 V. On the other hand, the solar cell manufactured in Comparative Example 1 has an open voltage of 0.90 V. As a result, it can be seen that the solar cell manufactured in Example 1 has a higher open voltage than the solar cell manufactured in Comparative Example 1. This is considered to be a result of suppressing generation of dark current in the busbar electrode by the insulating layer existing between the emitter layer and the busbar electrode.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention and the accompanying drawings. Naturally, it belongs to the scope of the invention.

100, 200: solar cell, 110, 210: base layer,
130, 230: emitter layer, 150, 250: rear electrode,
160: antireflection film, 170, 270: insulating layer,
191, 291: front electrode, 193, 293: busbar electrode

Claims (9)

Base layer;
An emitter layer formed on one surface of the base layer;
A rear electrode electrically connected to the base layer;
A front electrode electrically connected to the emitter layer on one surface of the emitter layer;
A bus bar electrode formed on one surface of the emitter layer to be distinguished from the front electrode; And
An insulating layer formed between the emitter layer and the busbar electrode
Including;
And the front electrode and the busbar electrode are electrically connected.
The method of claim 1,
The insulating layer is an oxide including aluminum oxide (Al 2 O 3 ), silicon oxide (SiO 2 ), titanium oxide (TiO 2 or TiO 4 ), magnesium oxide (MgO), cerium oxide (CeO 2 ), or a combination thereof. , Nitrides including aluminum nitride (AlN), silicon nitride (SiN x ), titanium nitride (TiN), or combinations thereof, aluminum oxynitride (AlON), silicon oxynitride (SiON), titanium oxynitride (TiON), or combinations thereof A solar cell comprising an oxynitride, magnesium fluoride (MgF 2 ), zinc sulfide (ZnS), or a combination thereof.
The method of claim 1,
The insulating layer is a solar cell having a thickness of 50 nm to 300 nm.
The method of claim 1,
The insulating layer is formed on a portion between the emitter layer and the bus bar electrode.
The method of claim 4, wherein
The busbar electrode is a solar cell wherein a portion of the busbar electrode is electrically connected to the emitter layer.
The method of claim 5,
And the busbar electrode is electrically connected to the emitter layer at a portion adjacent to the lighted portion of the emitter layer.
The method of claim 5,
The area adjacent to the insulating layer and the area adjacent to the emitter layer of the bus bar electrode has an area ratio of 100: 1 to 10: 1.
The method of claim 1,
The solar cell of claim 1, further comprising an antireflection film formed on a portion where the front electrode and the bus bar electrode are not formed.
The method of claim 8,
The insulating layer and the anti-reflection film is a solar cell comprising the same material.
KR1020100109237A 2010-11-04 2010-11-04 Solar cell KR20120047585A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9666831B2 (en) 2014-10-17 2017-05-30 Samsung Display Co., Ltd. Organic light emitting display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9666831B2 (en) 2014-10-17 2017-05-30 Samsung Display Co., Ltd. Organic light emitting display device

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