KR20120045539A - Light emitting device package - Google Patents

Light emitting device package Download PDF

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Publication number
KR20120045539A
KR20120045539A KR1020100107146A KR20100107146A KR20120045539A KR 20120045539 A KR20120045539 A KR 20120045539A KR 1020100107146 A KR1020100107146 A KR 1020100107146A KR 20100107146 A KR20100107146 A KR 20100107146A KR 20120045539 A KR20120045539 A KR 20120045539A
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KR
South Korea
Prior art keywords
light emitting
emitting device
device package
light
light source
Prior art date
Application number
KR1020100107146A
Other languages
Korean (ko)
Inventor
강경모
Original Assignee
엘지이노텍 주식회사
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Priority to KR1020100107146A priority Critical patent/KR20120045539A/en
Publication of KR20120045539A publication Critical patent/KR20120045539A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22Roughened surfaces, e.g. at the interface between epitaxial layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • H01L33/486Containers adapted for surface mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Planar Illumination Modules (AREA)

Abstract

PURPOSE: A light emitting device package is provided to improve reliability of a wire bonding process by forming a rough region for binding a wire on a lead frame. CONSTITUTION: A body(110) comprises a cavity and a wall. A first lead frame and a second lead frame are mounted on the body. A light source part is electrically connected to the first lead frame and the second lead frame. The first or second lead frame comprises a wire bonding region for bonding a wire and the light source part. A rough region(170) is formed on the wire bonding region. A auxiliary barrier(180) is formed between the wire bonding region and the light source part.

Description

Light Emitting Device Package

An embodiment relates to a light emitting device package.

Currently, semiconductor light emitting devices such as LEDs are applied to various devices including televisions, monitors, notebooks, mobile phones, and other display devices, and in particular, are widely used as backlight units in place of existing CCFLs.

The light emitting device package may include a light source unit and a lead frame. In order to electrically connect the light source unit and the lead frame, wire bonding by wires may be formed. When the light source unit and the lead frame are wire bonded by a wire, the reliability of wire bonding is directly related to the reliability of the light emitting device package.

Embodiments provide a light emitting device package in which roughness is formed in a region where wires on a lead frame are bonded, thereby improving reliability of wire bonding and light efficiency.

The light emitting device package according to the embodiment includes a body including a cavity and a wall portion, first and second lead frames mounted on the body, and a light source unit electrically connected to the first and second frames. At least one of the two lead frames includes a wire bonding region wire-bonded with the light source unit, a roughness is formed in the wire bonding region, and an auxiliary partition wall formed between the wire bonding region and the light source unit.

In addition, the roughness may consist of a plurality of protrusions.

In addition, the protrusions may be formed non-uniformly.

In addition, the roughness may consist of a plurality of grooves.

In addition, the groove portion may be formed non-uniformly.

In addition, the roughness may be formed wider than the wire bonding region.

In addition, the auxiliary partition wall may be lower than the height of the light source unit.

In addition, the auxiliary partition wall may include an inclined surface.

In addition, the auxiliary partition wall may include a reflective layer.

The light emitting device package according to the embodiment may increase the contact area wire-bonded to each lead frame, thereby improving bonding reliability and reducing bonding defects. In addition, due to the improved reliability of wire bonding, a thin wire may be used and the wire loop height may be reduced, thereby reducing the size of the light emitting device package. In addition, since scattering of light due to roughness is prevented through the auxiliary partition wall, deterioration of luminous efficiency of the light emitting device package may be prevented.

1A is a cross-sectional view illustrating a structure of a light emitting device package according to an embodiment;
1B is a cross-sectional view showing the structure of a light emitting device package according to the embodiment;
1C to 1E are partial perspective views of a region where roughness of the first lead frame is formed;
2A is a cross-sectional view illustrating an inventive device package according to an embodiment;
2B to 2D are partial cross-sectional views of a region in which an auxiliary partition wall of a second lead frame is formed;
3A and 3B are partial cross-sectional views of a region in which an auxiliary partition wall of a second lead frame is formed;
4A is a perspective view illustrating a lighting device including a light emitting device package according to an embodiment;
4b is a sectional view showing a section CC ′ of the lighting apparatus of FIG. 4a;
5 is an exploded perspective view of a liquid crystal display device including a light emitting device package according to an embodiment; and
6 is an exploded perspective view of a liquid crystal display including the light emitting device package according to the embodiment.

In the drawings, the thickness or size of each component is exaggerated, omitted, or schematically illustrated for convenience and clarity of description. In addition, the size and area of each component does not necessarily reflect the actual size or area.

Hereinafter, a light emitting device package according to an embodiment will be described with reference to the accompanying drawings.

1A and 1B are cross-sectional views illustrating a structure of a light emitting device package according to an embodiment, and FIGS. 1C to 1E are partial perspective views of regions in which roughness of a first lead frame is formed.

Referring to FIG. 1A, the light emitting device package 100 may include a body 110 including a cavity 160 and a wall part 120, first and second lead frames 140 and 142 mounted on the body 110, and a first light source. And a light source unit 130 electrically connected to the first and second lead frames 140 and 142, wherein at least one of the first and second lead frames 140 and 142 is bonded to the light source unit 130 and the wire 150. Roughness 170 is formed in the wire 150 bonding area, and includes the auxiliary barrier wall 180 formed between the wire 150 bonding area and the light source unit 130.

The body 110 is made of a resin material such as polyphthalamide (PPA), silicon (Si), aluminum (Al), aluminum nitride (AlN), liquid crystal polymer (PSG, photo sensitive glass), polyamide 9T (PA9T) ), Neo geotactic polystyrene (SPS), a metal material, sapphire (Al 2 O 3 ), beryllium oxide (BeO), may be formed of at least one of a printed circuit board (PCB, Printed Circuit Board). The body 110 may be formed by injection molding, etching, or the like, but is not limited thereto.

The body 110 may include a cavity 160 and a wall 120.

An inclined surface may be formed on the inner surface of the wall part 120. The angle of reflection of the light emitted from the light source unit 130 may vary according to the angle of the inclined surface, thereby adjusting the directivity angle of the light emitted to the outside.

As the direction angle of the light decreases, the concentration of light emitted from the light source 130 to the outside increases. On the contrary, as the direction angle of light increases, the concentration of the light emitted from the light source 130 to the outside decreases.

The wall portion 120 may further include a reflective layer (not shown) on an inner side surface, and thus the luminous intensity and light efficiency may be improved.

On the other hand, the shape of the cavity 160 formed on the body 110 as viewed from above may be circular, rectangular, polygonal, elliptical, or the like, and may have a curved shape, but is not limited thereto.

The light source unit 130 is electrically connected to the first and second lead frames 140 and 142. For example, the light source unit 130 may be mounted on the first lead frame 140, and the light source unit 130 and the second lead frame 142 may be wire bonded by the wire 150, or as shown in FIG. 1B. The light source unit 130 may be wire bonded by the first lead frame 140 and the second lead frame 142 and the wire 150, but is not limited thereto.

The light source unit 130 may be, for example, a light emitting diode. The light emitting diode may be, for example, a colored light emitting diode emitting light of red, green, blue, white, or the like, or an Ultra Violet (UV) emitting diode emitting ultraviolet light, but is not limited thereto. In addition, one or more light emitting diodes may be mounted.

In addition, the light emitting diode is applicable to both a horizontal type in which the electrical terminals are formed on the upper surface, or to a vertical type formed on the upper and lower surfaces.

Meanwhile, a resin layer (not shown) may be formed in the cavity 160 to cover the light source unit 130.

The resin layer (not shown) may be formed of silicon, epoxy, and other resin materials.

In addition, the resin layer (not shown) may include a phosphor, and the phosphor may be selected from a wavelength of light emitted from the light source unit 130 to allow the light emitting device package 100 to realize white light.

The phosphor may be one of a blue light emitting phosphor, a blue green light emitting phosphor, a green light emitting phosphor, a yellow green light emitting phosphor, a yellow light emitting phosphor, a yellow red light emitting phosphor, an orange light emitting phosphor, and a red light emitting phosphor according to a wavelength of light emitted from the light source unit 130. Applicable, but not limited to.

That is, the phosphor may be excited by the light having the first light emitted from the light source unit 130 to generate the second light. For example, when the light source unit 130 is a blue light emitting diode and the phosphor is a yellow phosphor, the yellow phosphor may be excited by blue light to emit yellow light, and excited by blue light and blue light generated from the blue light emitting diode. As the generated yellow light is mixed, the light emitting device package 100 may provide white light. In addition, the light emitting device package 100 may provide green light, blue light, and the like, but is not limited thereto.

Similarly, when the light source unit 130 is a green light emitting diode, a magenta phosphor or a mixture of blue and red phosphors is mixed. When the light source unit 130 is a red light emitting diode, a cyan phosphor or a blue and green phosphor is used. For example.

Such phosphors may be known phosphors such as YAG, TAG, sulfide, silicate, aluminate, nitride, carbide, nitridosilicate, borate, fluoride, phosphate, etc. Do not.

The first and second lead frames 140 and 142 may be formed of a metal material, for example, titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), and tantalum (Ta). , Platinum (Pt), tin (Sn), silver (Ag), phosphorus (P), aluminum (Al), indium (In), palladium (Pd), cobalt (Co), silicon (Si), germanium (Ge) , Hafnium (Hf), ruthenium (Ru), iron (Fe) may include one or more materials or alloys. In addition, each of the lead frames 140 and 142 may be formed to have a single layer or a multilayer structure. As shown in the drawings, several lead frames (not shown) may be provided in addition to the first and second lead frames 140 and 142. It may be implemented, but not limited thereto.

The first lead frame 140 and the second lead frame 142 may be spaced apart from each other and electrically separated from each other. The first lead frame 140 may be directly connected to the light source unit 130 or wire-bonded through a wire 150 having conductivity. In addition, the second lead frame 142 may be wire-bonded by the wire 150 to be electrically connected to the light source unit 130. Therefore, when power is connected to the first and second lead frames 140 and 142, power may be applied to the light source unit 130.

The first and second lead frames 140 and 142 may include a roughness 170 formed in an area where the wire 150 is bonded. The roughness 170 is formed by injection molding the first and second lead frames 140 and 142 on which the roughness 170 is formed, or by etching or pressing the first and second lead frames 140 and 142. It may be, but not limited to.

The roughness 170 may be implemented in various forms, and as shown in FIG. 1C, a regular protrusion may be formed on the surfaces of the first and second lead frames 140 and 142. Preferably, the region where the roughness 170 is formed may have an area equal to or larger than that of the wire 150 bonding region.

Meanwhile, the roughness 170 may be formed of a plurality of protrusions 171 having at least one of a size, a separation distance, and a protrusion angle as shown in FIG. 1D, but are not limited thereto. The plurality of protrusions 171 may protrude convexly toward the upper ends of the first and second lead frames 140 and 142 and may be formed unevenly to improve friction and contact force, thereby improving bonding reliability.

Meanwhile, as illustrated in FIG. 1E, the roughness 170 may include a plurality of grooves 172 having at least one of a depth, a separation distance, and a depression angle. The plurality of grooves 172 may be concave in the first and second lead frames 140 and 142, and may be regularly or irregularly formed. Preferably, the grooves 172 may be irregularly formed to improve friction and contact force, thereby bonding wires. Can improve the reliability.

As the roughness 170 is formed in one region of the first and second lead frames 140 and 142 and the wire 150 is bonded to the region in which the roughness 170 is formed, the contact area of the wire becomes wider to bond the wire. The reliability of can be improved. In addition, since the wire bonding may be formed using the thin wire 150 as the reliability of the wire bonding is improved, the luminous efficiency of the light emitting device package 100 may be prevented by the wire 150. Since the height of the wire loop may be reduced, the size of the light emitting device package 100 may be reduced, so that the reliability, economy, and utility of the light emitting device package 100 may be improved.

The light emitting device package 100 may include an auxiliary partition wall 180.

The auxiliary partition wall 180 may be formed in at least one region of the body 110 or at least one region of the first and second lead frames 140 and 142. In FIG. 1A, the auxiliary partition wall 180 is formed in one region of the second lead frame 142. In FIG. 1B, the auxiliary partition wall 180 is formed in one region of the first and second lead frames 140 and 142. It is not limited to this.

The auxiliary partition wall 180 may be formed by forming a protrusion on a region of the inner surface of the body 110 or by combining separate members, or at least one region of the first and second lead frames 140 and 142. It may be formed by forming a protrusion on or by combining separate members, but is not limited thereto. The auxiliary barrier wall 180 may be formed between a region where the light source unit 130 is mounted and a region where the roughness 170 is formed.

Since the auxiliary partition wall 180 is formed between the light source unit 130 and the region where the roughness 170 is formed, light emitted from the light source unit 130 may be prevented from being scattered by the roughness 170, and thus the light emitting device package may be used. The luminous efficiency of 100 may be improved.

Preferably, the auxiliary partition wall 180 may have a height lower than the height of the light source unit 130. When the height of the auxiliary barrier rib 180 is higher than the height of the light source unit 130, the light generated by the light source unit 130 may be blocked by the auxiliary barrier rib 180 to reduce the light emitting efficiency of the light emitting device package 100.

Meanwhile, in FIGS. 1A and 1B, the auxiliary barrier wall 180 is illustrated to be formed as a rectangular partition wall. However, the shape of the auxiliary partition wall 180 may be formed as a rectangle, a circle, a triangle, a polygon, and the like, but is not limited thereto.

2A is a cross-sectional view illustrating the inventive device package according to the embodiment of the present invention, and FIGS. 2B to 2D are partial cross-sectional views of a region in which an auxiliary partition wall shown in FIG. 2A is formed.

2A to 2D, at least one region of the auxiliary partition 280 may include an inclined surface 285.

In FIG. 2B, the inclined surfaces 285 are formed at both sides of the auxiliary partition 280, and in FIG. 2C, the inclined surfaces 285 are formed at one side of the auxiliary partition 280, but are not limited thereto. 285 may be formed in any region of the secondary partition 280. Meanwhile, as illustrated in FIG. 2D, the inclined surface 285 of the auxiliary partition 280 may be formed to have a curvature, but is not limited thereto. Preferably, the angle i formed by the inclined surface 285 of the auxiliary partition wall 280 and the bottom surface of the cavity 260 may be an obtuse angle, but is not limited thereto.

When at least one area of the auxiliary barrier rib 280 is formed as an inclined surface, since light generated from the light source unit 260 may be prevented from being blocked or scattered by the auxiliary barrier rib 280, the light emitting efficiency of the light emitting device package 200 may be prevented. This can be improved.

3A and 3B are partial cross-sectional views illustrating a light emitting device package according to an embodiment.

Referring to FIGS. 3A and 3B, the auxiliary partition 380 may include a reflective layer 390.

Preferably, the auxiliary partition 380 may include a reflective layer 390 formed in at least one region. The reflective layer 390 may be formed of a metal or an alloy including at least one of silver (Ag), aluminum (Al), platinum (Pt), palladium (Pd), or copper (Cu) having high reflectance, but is not limited thereto. No. Meanwhile, an adhesive layer (not shown) may be formed between the reflective layer 390 and the auxiliary partition 380 to enhance the interfacial bonding force between the two layers, but is not limited thereto. When the reflective layer 390 is formed on the auxiliary barrier rib 380, light scattering by the auxiliary barrier rib 380 may be prevented, thereby improving light emission efficiency of the light emitting device package (not shown).

4A is a perspective view illustrating a lighting device including a light emitting device package according to an embodiment, and FIG. 4B is a cross-sectional view illustrating a cross-sectional view taken along line C-C 'of the lighting device of FIG. 4A.

Hereinafter, in order to describe the shape of the lighting apparatus 400 according to the embodiment in more detail, the longitudinal direction (Z) of the lighting apparatus 400, the horizontal direction (Y) perpendicular to the longitudinal direction (Z), and the length The height direction X perpendicular to the direction Z and the horizontal direction Y will be described.

That is, FIG. 4B is a cross-sectional view of the lighting apparatus 400 of FIG. 4A cut in the plane of the longitudinal direction Z and the height direction X, and viewed in the horizontal direction Y. As shown in FIG.

4A and 4B, the lighting device 400 may include a body 410, a cover 430 fastened to the body 410, and a closing cap 450 positioned at both ends of the body 410. have.

The light emitting device module 440 is fastened to the lower surface of the body 410, and the body 410 is conductive so that heat generated from the light emitting device package 444 can be discharged to the outside through the upper surface of the body 410. And it may be formed of a metal material having an excellent heat dissipation effect.

The light emitting device package 444 has roughness (not shown) formed on each lead frame (not shown), so that the reliability and luminous efficiency of bonding can be improved, and between the roughness (not shown) and the light source unit (not shown) An auxiliary partition (not shown) is formed in the structure, which is advantageous for designing a slim and compact display device without deteriorating luminous efficiency due to roughness (not shown).

The light emitting device package 444 may be mounted on the PCB 442 in multiple colors and in multiple rows to form an array. The light emitting device package 444 may be mounted at the same interval or may be mounted with various separation distances as necessary to adjust brightness. As the PCB 442, a metal core PCB (MPPCB) or a PCB made of FR4 may be used.

The cover 430 may be formed in a circular shape to surround the lower surface of the body 410, but is not limited thereto.

The cover 430 protects the light emitting device module 440 from the outside and the like. In addition, the cover 430 may include diffusing particles to prevent glare of the light generated from the light emitting device package 444 and to uniformly emit light to the outside, and may also include at least one of an inner surface and an outer surface of the cover 430. A prism pattern or the like may be formed on either side. In addition, a phosphor may be applied to at least one of an inner surface and an outer surface of the cover 430.

On the other hand, since the light generated from the light emitting device package 444 is emitted to the outside through the cover 430, the cover 430 should have excellent light transmittance, and has sufficient heat resistance to withstand the heat generated from the light emitting device package 444. The cover 430 is preferably formed of a material including polyethylene terephthalate (PET), polycarbonate (PC), polymethyl methacrylate (PMMA), or the like. .

Closing cap 450 is located at both ends of the body 410 may be used for sealing the power supply (not shown). In addition, the fin 450 is formed on the finishing cap 450, so that the lighting device 400 according to the embodiment can be used immediately without a separate device on the terminal from which the conventional fluorescent lamp is removed.

5 is an exploded perspective view of a liquid crystal display including the light emitting device package according to the embodiment.

5 is an edge-light method, and the liquid crystal display 500 may include a liquid crystal display panel 510 and a backlight unit 570 for providing light to the liquid crystal display panel 510.

The liquid crystal display panel 510 may display an image by using light provided from the backlight unit 570. The liquid crystal display panel 510 may include a color filter substrate 512 and a thin film transistor substrate 514 facing each other with a liquid crystal interposed therebetween.

The color filter substrate 512 may implement colors of an image displayed through the liquid crystal display panel 510.

The thin film transistor substrate 514 is electrically connected to the printed circuit board 518 on which a plurality of circuit components are mounted through the driving film 517. The thin film transistor substrate 514 may apply a driving voltage provided from the printed circuit board 518 to the liquid crystal in response to the driving signal provided from the printed circuit board 518.

The thin film transistor substrate 514 may include a thin film transistor and a pixel electrode formed of a thin film on another substrate of a transparent material such as glass or plastic.

The backlight unit 570 may convert the light provided from the light emitting device module 520, the light emitting device module 520 into a surface light source, and provide the light guide plate 530 to the liquid crystal display panel 510. Reflective sheet for reflecting the light emitted from the rear of the light guide plate 530 and the plurality of films 550, 566, 564 to uniform the luminance distribution of the light provided from the 530 and improve the vertical incidence ( 540.

The light emitting device module 520 may include a PCB substrate 522 so that a plurality of light emitting device packages 524 and a plurality of light emitting device packages 524 may be mounted to form an array.

In particular, roughness (not shown) is formed in the light emitting device package 524 in a region where wires are bonded by light sources (not shown) and wires (not shown) of the first and second lead frames (not shown). And improves the reliability of the bonding, and an auxiliary partition (not shown) is formed between the roughness (not shown) and the light source unit (not shown), so that it is slim, compact, and more without degrading luminous efficiency due to the roughness (not shown). Reliable backlight unit 570 can be implemented.

Meanwhile, the backlight unit 570 includes a diffusion film 566 for diffusing light incident from the light guide plate 530 toward the liquid crystal display panel 510, and a prism film 550 for condensing the diffused light to improve vertical incidence. ), And may include a protective film 564 to protect the prism film 550.

6 is an exploded perspective view of a liquid crystal display including the light emitting device package according to the embodiment. However, the parts shown and described in Fig. 5 are not repeatedly described in detail.

6 is a direct view, the liquid crystal display device 600 may include a liquid crystal display panel 610 and a backlight unit 670 for providing light to the liquid crystal display panel 610.

Since the liquid crystal display panel 610 is the same as that described with reference to FIG. 5, a detailed description thereof will be omitted.

The backlight unit 670 may include a plurality of light emitting device modules 623, a reflective sheet 624, a lower chassis 630 in which the light emitting device modules 623 and the reflective sheet 624 are accommodated, and an upper portion of the light emitting device module 623. It may include a diffusion plate 640 and a plurality of optical film 660 disposed in the.

LED Module 623 A plurality of light emitting device packages 622 and a plurality of light emitting device packages 622 may be mounted to include a PCB substrate 621 to form an array.

In particular, roughness (not shown) is formed in the light emitting device package 622 in a region where wires are bonded by light sources (not shown) and wires (not shown) of the first and second lead frames (not shown). And improves the reliability of the bonding, and an auxiliary partition (not shown) is formed between the roughness (not shown) and the light source unit (not shown), so that it is slim, compact, and more without degrading luminous efficiency due to the roughness (not shown). Reliable backlight unit 670 can be implemented.

The reflective sheet 624 reflects the light generated from the light emitting device package 622 in the direction in which the liquid crystal display panel 610 is positioned to improve light utilization efficiency.

On the other hand, the light generated from the light emitting device module 623 is incident on the diffusion plate 640, the optical film 660 is disposed on the diffusion plate 640. The optical film 660 includes a diffusion film 666, a prism film 650, and a protective film 664.

In addition, the above description has been made with reference to the embodiment, which is merely an example, and is not intended to limit the present invention. Those skilled in the art to which the present invention pertains will be illustrated as above without departing from the essential characteristics of the present embodiment. It will be appreciated that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

100: light emitting device package 110: the body
150: wire 160: cavity
170: roughness 171: protrusion
172: groove 180: auxiliary partition

Claims (14)

A body including a cavity and a wall;
First and second lead frames mounted to the body; And
And a light source unit electrically connected to the first and second frames.
At least one of the first and second lead frames includes a wire bonding region wire-bonded with the light source unit, and roughness is formed in the wire bonding region,
The light emitting device package including an auxiliary partition formed between the wire bonding region and the light source.
The method of claim 1,
The roughness is a light emitting device package consisting of a plurality of protrusions.
The method of claim 2,
The projecting portion of the light emitting device package is formed in at least one of the size, the projecting angle, and at least one of the separation distance.
The method of claim 1,
The roughness is a light emitting device package consisting of a plurality of grooves.
The method of claim 4, wherein
The groove is a light emitting device package is formed at least one of the depth, the depression angle, and the separation distance are non-uniform.
The method of claim 1,
The area of the region where the roughness is formed is greater than or equal to the area of the wire bonding region.
The method of claim 1,
The auxiliary barrier rib is formed on at least one of the first and second lead frame.
The method of claim 1,
The auxiliary partition wall is a light emitting device package formed in at least one region of the body.
The method of claim 1,
The auxiliary barrier rib has a height lower than the height of the light source unit package.
The method of claim 1,
The auxiliary partition wall includes a light emitting device package having an inclined surface formed in at least one area.
The method of claim 11,
The inclined surface is a light emitting device package having a curvature.
The method of claim 1,
The auxiliary partition wall is a light emitting device package including a reflective layer in at least one area.
The lighting device comprising the light emitting device package of any one of claims 1 to 12. A backlight unit comprising the light emitting device package of any one of claims 1 to 12.
KR1020100107146A 2010-10-29 2010-10-29 Light emitting device package KR20120045539A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150007735A (en) * 2013-07-12 2015-01-21 엘지이노텍 주식회사 Light Emitting Diode Package
KR20170132932A (en) * 2016-05-24 2017-12-05 주식회사 세미콘라이트 Semiconductor light emitting device
KR20170134816A (en) * 2016-05-26 2017-12-07 주식회사 세미콘라이트 Semiconductor light emitting device
US10008648B2 (en) 2015-10-08 2018-06-26 Semicon Light Co., Ltd. Semiconductor light emitting device
US11038086B2 (en) 2016-03-07 2021-06-15 Semicon Light Co., Ltd. Semiconductor light-emitting element and manufacturing method therefor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150007735A (en) * 2013-07-12 2015-01-21 엘지이노텍 주식회사 Light Emitting Diode Package
US10008648B2 (en) 2015-10-08 2018-06-26 Semicon Light Co., Ltd. Semiconductor light emitting device
US11038086B2 (en) 2016-03-07 2021-06-15 Semicon Light Co., Ltd. Semiconductor light-emitting element and manufacturing method therefor
KR20170132932A (en) * 2016-05-24 2017-12-05 주식회사 세미콘라이트 Semiconductor light emitting device
KR20170134816A (en) * 2016-05-26 2017-12-07 주식회사 세미콘라이트 Semiconductor light emitting device

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