KR20120019965A - Fuse circuit - Google Patents
Fuse circuit Download PDFInfo
- Publication number
- KR20120019965A KR20120019965A KR1020100083610A KR20100083610A KR20120019965A KR 20120019965 A KR20120019965 A KR 20120019965A KR 1020100083610 A KR1020100083610 A KR 1020100083610A KR 20100083610 A KR20100083610 A KR 20100083610A KR 20120019965 A KR20120019965 A KR 20120019965A
- Authority
- KR
- South Korea
- Prior art keywords
- signal
- fuse
- pull
- node
- enabled
- Prior art date
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
- G11C17/18—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/027—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in fuses
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/14—Implementation of control logic, e.g. test mode decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/36—Data generation devices, e.g. data inverters
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- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
The fuse circuit generates a pull-down signal and a pull-up signal that are sequentially enabled in response to the test mode signal, and generates a fuse screen signal by delaying the test mode signal by a predetermined period, and the fuse screen signal. And an output fuse signal generator configured to generate an output fuse signal in which the level transition is determined in response to the enable period.
Description
The present invention relates to a fuse circuit capable of detecting a fuse having an abnormal resistance value.
Semiconductor integrated circuit products use optional processing to change their mode. Conventional option treatments include bonding options, metal options, or fuse options.
In particular, the fuse option is widely used to replace an abnormal memory cell generated during a manufacturing process of a semiconductor memory device with a normal memory cell and to change a design of a semiconductor memory chip. The fuse option is implemented by cutting a fuse by irradiating a laser beam or by applying excessive current. A circuit having at least one fuse for the fuse option is called a fuse circuit.
On the other hand, a fuse included in the fuse circuit has an abnormal resistance value due to a defect generated in the manufacturing process, cutting of adjacent fuses or moisture introduced during the HAST (High Accelerated Stress Test) abnormal resistance value of the fuse included in the fuse circuit. Can have If a fuse included in the fuse circuit has an abnormal resistance value, a malfunction of the fuse circuit may be caused. Accordingly, there is a need for a method of detecting a fuse that causes a malfunction of the fuse circuit by screening the resistance value of the fuse included in the fuse circuit.
The present invention discloses a fuse circuit capable of detecting a fuse having an abnormal resistance value.
To this end, the present invention generates a pull-down signal and a pull-up signal that is sequentially enabled in response to the test mode signal, and a signal generation unit for generating a fuse screen signal by delaying the test mode signal by a predetermined interval, and the fuse screen Provided is a fuse circuit including an output fuse signal generator for generating an output fuse signal in which a level transition is determined in response to an enable period of a signal.
1 is a block diagram showing the configuration of a fuse circuit according to an embodiment of the present invention.
FIG. 2 is a circuit diagram of a signal generation unit included in the fuse circuit shown in FIG. 1.
3 is a circuit diagram of an output fuse signal generation unit included in the fuse circuit of FIG. 1.
4 and 5 are timing diagrams for explaining the operation of the fuse circuit shown in FIG.
Hereinafter, the present invention will be described in more detail with reference to Examples. These embodiments are only for illustrating the present invention, and the scope of rights of the present invention is not limited by these embodiments.
1 is a block diagram showing the configuration of a fuse circuit according to an embodiment of the present invention.
As shown in Fig. 1, the fuse circuit of this embodiment includes a
As illustrated in FIG. 2, the
The
As shown in FIG. 3, the output
The output
Looking at the operation of the fuse circuit of the present embodiment described above, on the assumption that the fuse (F20) is cut as follows. 4 and 5, the enable period of the test mode signal TM is divided into a case of X and a case of Y, as follows.
As shown in FIG. 4, the reset signal RSTB transitions to a logic low level at a time t10 after the power-up period ends and the predetermined period elapses, and a pulse of the reset pulse RSTP is input. Accordingly, the pull-down signal PD is disabled at a logic low level, and the pull-up signal PU is enabled at a logic low level in a period t10 to t11 where a pulse of the reset pulse RSTP is input. Since the fuse F20 is cut, the node nd22 maintains the logic low level and the output fuse signal F_OUT maintains the logic high level by the logic high level enabled pull-down signal PD before t10. do.
Thereafter, when the test mode signal TM in which the enable section is set to X is input at time t12, the logic low level is enabled from time t13 at which the delay period of the
At this time, the PMOS transistors P20 and P21 and the NMOS transistor N21 are simultaneously turned on by the pull-up signal PU enabled at the logic low level and the fuse screen signal FS enabled at the logic high level. The level of nd22 gradually rises. Since the enable section of the test mode signal TM is sufficiently secured as X, the level of the node nd22 rises to a logic high level, and the output fuse signal F_OUT transitions to a logic low level. When the output fuse signal F_OUT is output at a logic low level, the fuse F20 is recognized as not cut.
On the other hand, as shown in FIG. 5, when the enable period of the test mode signal TM is set to Y, the level of the node nd22 does not rise to the logic high level, so the output fuse signal F_OUT changes the logic high level. Keep it. Therefore, the fuse F20 is recognized as being cut.
As described above, the fuse circuit of the present exemplary embodiment may determine whether the output fuse signal F_OUT is level shifted by adjusting the enable period of the test mode signal TM. The level transition time of the output fuse signal F_OUT according to the enable period of the test mode signal TM is determined by the resistance value of the fuse. Therefore, a fuse having an abnormal resistance value can be detected on the basis of the information on the enable section of the test mode signal TM that shifts the level of the output fuse signal F_OUT in a fuse circuit having a fuse having a normal resistance value. have.
1: signal generator 10: test mode signal processor
100: reverse delay unit 2: output fuse signal generation unit
20: drive unit 21: fuse detection unit
22: output unit
Claims (8)
And an output fuse signal generation unit configured to generate an output fuse signal in which a level transition is determined in response to an enable period of the fuse screen signal.
A driving unit driving a first node in response to the pull-up signal and the pull-down signal;
A fuse detector configured to pull down the first node in response to the fuse screen signal; And
And an output unit configured to generate the output fuse signal by buffering the first node and to drive the first node in response to the output fuse signal.
A first pull-up element connected between a power supply voltage and a second node and turned on in response to the pull-up signal;
A fuse connected between the second node and a third node;
A second pull-up element connected between the third node and the first node and turned on in response to the pull-up signal; And
And a first pull-down device connected between the first node and a ground voltage and turned on in response to the pull-down signal.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100083610A KR20120019965A (en) | 2010-08-27 | 2010-08-27 | Fuse circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100083610A KR20120019965A (en) | 2010-08-27 | 2010-08-27 | Fuse circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20120019965A true KR20120019965A (en) | 2012-03-07 |
Family
ID=46128750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100083610A KR20120019965A (en) | 2010-08-27 | 2010-08-27 | Fuse circuit |
Country Status (1)
Country | Link |
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KR (1) | KR20120019965A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3741827A1 (en) | 2012-02-27 | 2020-11-25 | LG Chem, Ltd. | Organic light emitting diode |
-
2010
- 2010-08-27 KR KR1020100083610A patent/KR20120019965A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3741827A1 (en) | 2012-02-27 | 2020-11-25 | LG Chem, Ltd. | Organic light emitting diode |
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