KR20120014534A - Electromagnetic casting apparatus for silicon ingot - Google Patents
Electromagnetic casting apparatus for silicon ingot Download PDFInfo
- Publication number
- KR20120014534A KR20120014534A KR1020100134399A KR20100134399A KR20120014534A KR 20120014534 A KR20120014534 A KR 20120014534A KR 1020100134399 A KR1020100134399 A KR 1020100134399A KR 20100134399 A KR20100134399 A KR 20100134399A KR 20120014534 A KR20120014534 A KR 20120014534A
- Authority
- KR
- South Korea
- Prior art keywords
- raw material
- silicon
- cooling crucible
- ingot
- crucible
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
- C30B30/02—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using electric fields, e.g. electrolysis
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
Abstract
The silicon raw material is introduced into the conductive bottomless cooling crucible through the raw material introduction tube, and by the electromagnetic induction heating from the induction coil surrounding the cooling crucible, and the plasma arc heating from the plasma torch inserted at the top of the cooling crucible. In an electronic casting apparatus in which a silicon raw material is melted and the molten silicon is solidified while being pulled down from a cooling crucible to continuously cast a silicon ingot, a through hole is formed in the side wall of the cooling crucible, and the raw material introduction pipe is connected to the through hole. It is. As a result, the silicon raw material can be prevented from coming into contact with the plasma torch as the silicon raw material is introduced into the cooling crucible, the metal impurity contamination of the molten silicon can be suppressed, and the melting of the silicon raw material can be stabilized.
Description
The present invention relates to an electronic casting device for continuously casting a silicon ingot that is a raw material of a solar cell substrate.
As a substrate of a solar cell, it is mainstream to use a polycrystalline silicon wafer. The polycrystalline silicon wafer is made of a silicon ingot of solidification in one direction and manufactured by slicing this ingot. Therefore, in order to spread the solar cell, it is necessary to secure the quality of the silicon wafer and to reduce the cost. Therefore, it is required to manufacture the silicon ingot with high quality and low cost in the previous step. As a method which can respond to this request, for example, as disclosed in
4 is a diagram schematically showing a configuration of a conventional representative electronic casting apparatus used in the electronic casting method. As shown in this figure, the electronic casting device includes a
In the
The
Moreover, in the
In the bottom wall of the
Immediately above the
In the electroforming method using such an electronic casting device, the silicon
In addition, a plasma arc is generated between the
The
During casting, in order to maintain the inside of the
According to such an electronic casting apparatus, since the contact of the
In the above-described conventional electronic casting apparatus, when the silicon
As for the
Moreover, since the silicon
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and when continuously casting a silicon ingot, the silicon raw material is prevented from coming into contact with the plasma torch due to the introduction of the silicon raw material into the cooling crucible, thereby preventing metal impurity contamination of the molten silicon. In addition, it aims at providing the electronic casting apparatus of the silicon ingot which can stabilize and melt | dissolve the silicon raw material.
MEANS TO SOLVE THE PROBLEM This inventor repeated earnestly, paying attention to the behavior of the silicon raw material thrown into a cooling crucible, in order to achieve the said objective. As a result, in order to prevent the silicon raw material from contacting the plasma torch, the silicon raw material is not introduced from above the cooling crucible, but a through hole is formed in the sidewall of the cooling crucible, and the silicon raw material is introduced into the cooling crucible from the through crucible. It was found that it was effective to inject and completed the present invention.
The gist of the present invention resides in an electron casting device of a silicon ingot shown below. That is, the silicon raw material is introduced into the conductive bottomless cooling crucible through the raw material introduction tube, the electromagnetic induction heating from the induction coil surrounding the bottomless cooling crucible, and the plasma inserted above the bottomless cooling crucible. In an electronic casting apparatus in which a silicon raw material is melted by plasma arc heating from a torch, and molten silicon is solidified while being pulled down from a bottomless cooling crucible to continuously cast a silicon ingot, which penetrates the sidewall of the bottomless cooling crucible. A hole is formed, and the raw material introduction pipe is connected to this through-hole, It is the electroforming apparatus of a silicon ingot.
In the above-mentioned electronic casting apparatus, it is preferable that the said raw material introduction tube is arrange | positioned at the inclination angle which inject | pours the said silicon raw material to the hot water center of the said molten silicon.
Moreover, in said electron casting apparatus, it is preferable that the inner surface of the said raw material introduction tube is covered by the silicone member.
According to the electronic casting apparatus of the silicon ingot of the present invention, when the silicon ingot is continuously cast, the silicon raw material is brought into contact with the plasma torch by injecting the silicon raw material into the cooling crucible through a raw material introduction pipe connected to the sidewall of the cooling crucible. Since it is possible to prevent the metal impurity contamination from the plasma torch, it is possible to suppress the metal impurity contamination of the molten silicon, and at the same time, the deposition position of the injected silicon raw material is constant, and the melting of the silicon raw material is stabilized.
BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows typically the structure of the electronic casting apparatus of this invention.
2 is a plan view schematically showing the appearance of a cooling crucible used in the electroforming apparatus of the present invention.
FIG. 3 is a diagram showing measurement results of metal impurity concentrations in silicon ingots by the test of Examples, FIG. 3 (a) shows Fe concentration, FIG. 3 (b) shows Ni concentration, and FIG. ) Represents Cu concentration, and FIG. 3 (d) represents Cr concentration.
4 is a diagram schematically showing a configuration of a conventional representative electronic casting apparatus used in the electronic casting method.
EMBODIMENT OF THE INVENTION Below, embodiment is described in detail about the electronic casting apparatus of the silicon ingot of this invention.
BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows typically the structure of the electronic casting apparatus of this invention. The electroforming apparatus of this invention shown in this figure is based on the structure of the electroforming apparatus shown in said FIG. 4, The same code | symbol is attached | subjected to the same structure as that, and the overlapping description is abbreviate | omitted suitably.
As shown in FIG. 1, the through-
It is necessary to form the through
In addition, the through
Moreover, the inclination angle (theta) is set in the raw material introduction pipe |
In addition, since the silicon
2 is a plan view schematically showing the appearance of a cooling crucible used in the electroforming apparatus of the present invention. As shown in this figure, the cooling
Here, the space | interval of the
According to the electronic casting apparatus of such a structure, when continuously casting a silicon ingot, a silicon raw material can be thrown on the molten silicon in a cooling crucible without contacting a plasma torch via the raw material introduction tube connected to the side wall of a cooling crucible. . For this reason, metal impurity contamination from a plasma torch can be prevented, and metal impurity contamination of molten silicon can be suppressed, and an ingot excellent in quality can be manufactured. In addition, since the deposition position of the injected silicon raw material is constant and the melting of the silicon raw material is stabilized, no special operation for greatly varying the casting speed is required.
When the silicon raw material is placed in the center of the molten silicon, the melting of the silicon raw material is further stabilized, and since the injected silicon raw material does not come into contact with the inner wall of the cooling crucible, it is possible to prevent contamination of metal impurities from the cooling crucible. Can be.
[Example]
In order to confirm the effect by the electroforming apparatus of the present invention, a silicon ingot having a total length of 7000 mm was continuously cast in a square cross section having one side of 345 mm using the electroforming apparatus shown in FIG. 1. For comparison, silicon ingots having the same dimensions were continuously cast using the conventional electronic casting apparatus shown in FIG. 4. Any continuous casting was performed by three batches, the sample was taken from each obtained ingot, and the test which measured the density | concentration of a metal impurity was done.
The sample was extract | collected from each of the center part of an ingot and the outer peripheral part in the cross section corresponded to length 3600mm from the lower end (the position of the head of continuous casting) of an ingot. The concentration of metal impurities was measured by component analysis by all dissolution methods, and the respective concentrations of Fe, Ni, Cu, and Cr were evaluated as metal impurities.
FIG. 3 is a diagram showing measurement results of metal impurity concentrations in silicon ingots by the test of Examples, FIG. 3 (a) shows Fe concentration, FIG. 3 (b) shows Ni concentration, and FIG. 3 (c). ) Represents the concentration of Cu, and FIG. 3 (d) represents the Cr concentration. The density | concentration of each metal impurity shown in this figure is the value which divided | segmented into the example of this invention, and the comparative example, and averaged the measured value of three arrangement | positioning in each of the center part and outer peripheral part of an ingot.
From the results shown in Figs. 3A to 3D, in the example of the present invention in which the silicon raw material does not come into contact with the plasma torch when the silicon raw material is introduced, Fe and Ni are compared with the comparative example in which the silicon raw material comes in contact with the plasma torch. It has become clear that any metal impurities or concentrations of Cu, Cr and Cr can be reduced to suppress metal impurity contamination of molten silicon.
[Industrial Availability]
According to the electronic casting apparatus of the silicon ingot of the present invention, the silicon raw material can be prevented from contacting the plasma torch by introducing the silicon raw material into the cooling crucible through the raw material introduction pipe connected to the sidewall of the cooling crucible. Metal impurity contamination is prevented, and metal impurity contamination of the molten silicon can be suppressed, and at the same time, the deposition position of the injected silicon raw material is constant, and the melting of the silicon raw material is stabilized. Therefore, the electronic casting apparatus of this invention is extremely useful at the point which can manufacture the silicon ingot for solar cells excellent in quality efficiently.
1: Chamber 2: Raw material feed hopper
3: silicon ingot 4: outlet
5: inert gas inlet 6: exhaust port
7: cooling crucible without
7b:
8: induction coil 9: after heater
10: raw material introduction pipe 11: silicon raw material
12: molten silicon 13: plasma torch
14: support θ: inclination angle
Claims (3)
A through hole is formed in the side wall of a cooling crucible without a bottom, and the raw material introduction pipe | tube is connected to this through hole, The electronic casting apparatus of the silicon ingot.
The raw material introduction tube is arranged at an inclination angle to inject the silicon raw material into the center of the molten silicon of the molten silicon, characterized in that the electronic casting device of the silicon ingot.
The inner surface of the said raw material introduction tube is covered with the silicon member, The electronic casting apparatus of the silicon ingot.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010178459A JP2012036045A (en) | 2010-08-09 | 2010-08-09 | Electromagnetic casting apparatus of silicon ingot |
JPJP-P-2010-178459 | 2010-08-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20120014534A true KR20120014534A (en) | 2012-02-17 |
Family
ID=45837571
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100134399A KR20120014534A (en) | 2010-08-09 | 2010-12-24 | Electromagnetic casting apparatus for silicon ingot |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2012036045A (en) |
KR (1) | KR20120014534A (en) |
-
2010
- 2010-08-09 JP JP2010178459A patent/JP2012036045A/en active Pending
- 2010-12-24 KR KR1020100134399A patent/KR20120014534A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JP2012036045A (en) | 2012-02-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6438007B2 (en) | Electromagnetic induction furnace for melting a mixture of metal and oxide, a typical example being corium, and its use | |
JP5878398B2 (en) | Titanium melting equipment | |
JP4099062B2 (en) | Treatment of molten metal by moving electrical discharge | |
KR20150004788A (en) | Process and device for bringing two immiscible liquids into contact, without mixing and at high temperature, with heating and brazing by induction | |
TWI527942B (en) | Silicon electromagnetic casting device | |
KR20120014534A (en) | Electromagnetic casting apparatus for silicon ingot | |
JP6961110B2 (en) | Floating melting method using cyclic elements | |
KR20120031421A (en) | Electromagnetic casting method for silicon ingot | |
KR20120021136A (en) | Electromagnetic casting apparatus for silicon ingot | |
JP5342322B2 (en) | Ingot manufacturing method | |
KR20120026431A (en) | Method for electromagnetic casting of silicon ingot | |
JP2003307390A (en) | Cold crucible induction melting and casting system and induction melting and casting method | |
WO2012011159A1 (en) | Process for continuously casting silicon ingots | |
JP4366705B2 (en) | Ingot manufacturing method and apparatus | |
KR20120021134A (en) | Apparatus for electromagnetic casting of silicon ingot | |
RU2319752C2 (en) | Method for induction melting of metal and apparatus for performing the same | |
JP2005055017A (en) | Molten metal tapping device | |
JP2000088467A (en) | Floating melting apparatus | |
JP2003048052A (en) | Method and device for manufacturing ingot for wire drawing | |
KR20120023487A (en) | Apparatus and method for continuous casting of silicon ingot | |
KR20120023488A (en) | Apparatus and method for continuous casting of silicon ingot | |
JP2012136410A (en) | Method for casting polycrystalline silicon | |
JP2012224502A (en) | Method for continuously casting polycrystalline silicon | |
JP2005089837A (en) | Melt spraying device for metal | |
JP2020020018A (en) | Method and apparatus for manufacturing titanium ingot or titanium alloy ingot |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
N231 | Notification of change of applicant | ||
WITB | Written withdrawal of application |