KR20120001589A - Glass phase forming agent, metal ink composition with the same for front electrode of silicon solar cell, and silicon solar cell using the same - Google Patents
Glass phase forming agent, metal ink composition with the same for front electrode of silicon solar cell, and silicon solar cell using the same Download PDFInfo
- Publication number
- KR20120001589A KR20120001589A KR1020110016196A KR20110016196A KR20120001589A KR 20120001589 A KR20120001589 A KR 20120001589A KR 1020110016196 A KR1020110016196 A KR 1020110016196A KR 20110016196 A KR20110016196 A KR 20110016196A KR 20120001589 A KR20120001589 A KR 20120001589A
- Authority
- KR
- South Korea
- Prior art keywords
- metal
- solar cell
- glass phase
- silicon solar
- front electrode
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 69
- 239000010703 silicon Substances 0.000 title claims abstract description 69
- 239000011521 glass Substances 0.000 title claims abstract description 51
- 239000003795 chemical substances by application Substances 0.000 title claims abstract description 34
- 239000002184 metal Substances 0.000 title claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 33
- 239000000203 mixture Substances 0.000 title claims description 10
- 238000000034 method Methods 0.000 claims abstract description 33
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 27
- 238000007639 printing Methods 0.000 claims abstract description 21
- 239000003960 organic solvent Substances 0.000 claims abstract description 14
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000002082 metal nanoparticle Substances 0.000 claims abstract description 5
- 229910001960 metal nitrate Inorganic materials 0.000 claims abstract description 5
- -1 glycol ethers Chemical class 0.000 claims abstract description 4
- 150000001298 alcohols Chemical class 0.000 claims abstract description 3
- 150000002170 ethers Chemical class 0.000 claims abstract description 3
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims abstract description 3
- 150000005846 sugar alcohols Polymers 0.000 claims abstract description 3
- 238000007496 glass forming Methods 0.000 claims description 23
- 238000002508 contact lithography Methods 0.000 claims description 18
- 229940100890 silver compound Drugs 0.000 claims description 9
- 150000003379 silver compounds Chemical class 0.000 claims description 9
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 4
- 150000001242 acetic acid derivatives Chemical class 0.000 claims description 3
- 150000004677 hydrates Chemical class 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000007650 screen-printing Methods 0.000 abstract description 6
- 150000001875 compounds Chemical class 0.000 abstract description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 abstract description 2
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000000976 ink Substances 0.000 description 53
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 43
- 229910052709 silver Inorganic materials 0.000 description 43
- 239000004332 silver Substances 0.000 description 43
- 239000012071 phase Substances 0.000 description 35
- 235000012431 wafers Nutrition 0.000 description 32
- 238000010438 heat treatment Methods 0.000 description 14
- RLJMLMKIBZAXJO-UHFFFAOYSA-N lead nitrate Chemical compound [O-][N+](=O)O[Pb]O[N+]([O-])=O RLJMLMKIBZAXJO-UHFFFAOYSA-N 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 12
- XIOUDVJTOYVRTB-UHFFFAOYSA-N 1-(1-adamantyl)-3-aminothiourea Chemical compound C1C(C2)CC3CC2CC1(NC(=S)NN)C3 XIOUDVJTOYVRTB-UHFFFAOYSA-N 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 239000002105 nanoparticle Substances 0.000 description 9
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 8
- 239000011701 zinc Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229940046892 lead acetate Drugs 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000007641 inkjet printing Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 239000010944 silver (metal) Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000007791 liquid phase Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000011858 nanopowder Substances 0.000 description 3
- 229910002651 NO3 Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 150000001622 bismuth compounds Chemical class 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- QYIGOGBGVKONDY-UHFFFAOYSA-N 1-(2-bromo-5-chlorophenyl)-3-methylpyrazole Chemical compound N1=C(C)C=CN1C1=CC(Cl)=CC=C1Br QYIGOGBGVKONDY-UHFFFAOYSA-N 0.000 description 1
- 101710134784 Agnoprotein Proteins 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000443 aerosol Substances 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010946 fine silver Substances 0.000 description 1
- RXPAJWPEYBDXOG-UHFFFAOYSA-N hydron;methyl 4-methoxypyridine-2-carboxylate;chloride Chemical compound Cl.COC(=O)C1=CC(OC)=CC=N1 RXPAJWPEYBDXOG-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002611 lead compounds Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D11/00—Inks
- C09D11/52—Electrically conductive inks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
본 발명은 실리콘 태양전지의 전면전극 형성을 위한 액상형태의 유리상 형성제, 이를 포함한 금속 잉크 및 이를 이용한 실리콘 태양전지에 관한 것으로, 보다 구체적으로는 한 번의 비접촉식 인쇄를 통해 SiNx 반사방지막의 에칭과 전면전극 형성을 동시에 수행할 수 있도록 고안된 액상의 유리상 형성제 및 이를 포함한 금속 잉크 그리고 이를 이용한 실리콘 태양전지에 관한 것이다.
The present invention relates to a liquid phase glass-forming agent for forming a front electrode of a silicon solar cell, a metal ink including the same, and a silicon solar cell using the same. More specifically, the SiN x anti-reflection film is etched through a single non-contact printing process. The present invention relates to a liquid glass phase former designed to simultaneously perform front electrode formation, a metal ink including the same, and a silicon solar cell using the same.
태양전지는 원료 물질 및 구조에 따라 크게 실리콘 태양전지(silicon solar cell), 화합물 반도체 태양전지(compound semiconductor solar cell) 및 적층형 태양전지(tandem solar cell)로 구분된다. 상업용 태양전지 시장에서는 이러한 3가지 종류의 태양전지 중 실리콘 태양전지가 주류를 이루고 있다.Solar cells are largely divided into silicon solar cells, compound semiconductor solar cells, and tandem solar cells according to raw materials and structures. Among the three types of solar cells, silicon solar cells are the mainstream in the commercial solar cell market.
태양전지에 태양광이 입사되면, 광기전력효과(photovoltaic effect)에 의해 불순물이 도핑된 실리콘 반도체에서 전자(electron)와 정공(hole)이 발생한다. n형 실리콘 반도체로 이루어진 에미터층에서는 정공이 소수 캐리어로 발생되고, p형 실리콘 반도체로 이루어진 기판에서는 전자가 소수 캐리어로 발생된다. 광기전력효과에 의해 생성된 전자와 정공은 각각 n형 실리콘 반도체 및 p형 실리콘 반도체 쪽으로 끌어 당겨져 각각 에미터층 상부 및 기판 하부와 접합된 전면전극 및 후면전극으로 이동하며, 이 전극들을 전선으로 연결하면 전류가 흐르게 된다.When sunlight is incident on a solar cell, electrons and holes are generated in a silicon semiconductor doped with impurities by a photovoltaic effect. Holes are generated as minority carriers in the emitter layer made of n-type silicon semiconductor, and electrons are generated as minority carriers in the substrate made of p-type silicon semiconductor. The electrons and holes generated by the photovoltaic effect are attracted to the n-type and p-type silicon semiconductors, respectively, and move to the front and rear electrodes bonded to the upper and lower emitter layers, respectively. Current will flow.
태양전지의 효율을 개선하기 위해서는 입사되는 빛의 반사를 최소화해야 한다. 빛의 반사를 최소화하기 위한 방법으로는 건식식각 또는 습식식각을 통해 태양전지의 표면 구조를 개선(텍스쳐: texture)하는 방법과 실리콘 태양전지의 에미터층 위에 반사방지막을 증착하는 방법이 있다. 일반적으로는 실리콘 태양전지에서는 두 가지 방법을 모두 이용하여 빛의 반사를 최소화하고 있다.In order to improve the efficiency of solar cells, it is necessary to minimize the reflection of incident light. Methods for minimizing light reflection include a method of improving the surface structure of a solar cell through dry etching or wet etching, and depositing an antireflection film on an emitter layer of a silicon solar cell. In general, silicon solar cells use both methods to minimize light reflection.
실리콘 태양전지 위에 전면전극을 형성하기 위한 인쇄법으로는 접촉식 인쇄법과 비접촉식 인쇄법이 있다. 접촉식 인쇄법인 스크린 인쇄법은 실리콘 웨이퍼 상부에 금속 페이스트를 사용하여 회로를 인쇄한 후 열처리를 통해 전면전극을 형성하기 위한 인쇄법이다. 일반적으로 금속 페이스트에는 반사방지막의 에칭을 위한 유리분말과 에미터층과의 전극형성을 위한 금속분말로서 주로 은(Ag) 분말을 포함하고 있다. 실리콘 웨이퍼에 인쇄된 금속 페이스트는 열처리 과정 동안 먼저 반사방지막을 에칭하고 에미터층과의 반응을 통해 에미터층의 표면에 금속 결정립(crystallite)이 생성되도록 하여 전면전극이 형성되도록 한다. 하지만 스크린 인쇄법과 같은 접촉식 인쇄법은 인쇄 시 실리콘 웨이퍼에 가해지는 압력 때문에 실리콘 기판이 파손될 수 있는 단점이 있다. 이러한 기판의 파손 문제는 실리콘 태양전지가 박형화됨에 따라 더욱 심각해지고 있다.Printing methods for forming front electrodes on silicon solar cells include contact printing and non-contact printing. Screen printing, a contact printing method, is a printing method for forming a front electrode through heat treatment after printing a circuit using a metal paste on a silicon wafer. In general, the metal paste mainly contains silver (Ag) powder as a metal powder for forming an electrode between the glass powder for etching the antireflection film and the emitter layer. The metal paste printed on the silicon wafer first etches the anti-reflection film during the heat treatment and reacts with the emitter layer so that metal crystallites are formed on the surface of the emitter layer to form the front electrode. However, the contact printing method such as the screen printing method has a disadvantage that the silicon substrate may be damaged due to the pressure applied to the silicon wafer during printing. The problem of breakage of the substrate becomes more serious as the silicon solar cell becomes thinner.
비접촉식 인쇄법은 인쇄 공정 동안 실리콘 기판에 압력이 가해지지 않기 때문에 접촉식 인쇄법에서 발생할 수 있는 태양전지의 파손을 방지할 수 있다. 비접촉식 인쇄법으로는 잉크젯(ink jet) 인쇄법, 에어로졸젯(aerosol jet) 인쇄법 등이 있다. 비접촉식 인쇄법은 미세한 노즐(nozzle)을 통해 인쇄 물질을 분사하는 방법이기 때문에 스크린 인쇄법과 달리 점도가 낮은 액상의 금속 잉크(ink)를 사용한다. 금속 잉크는 일반적으로 은(Ag) 잉크가 사용되며 인쇄 시 분사 노즐의 막힘을 방지하기 위해 은 나노입자가 용매에 분산되어 있는 잉크나 은 화합물이 유기용매에 녹아 있는 형태의 MOD(metallo-organic decomposition) 잉크를 사용한다. The contactless printing method does not apply pressure to the silicon substrate during the printing process, thereby preventing damage to the solar cell that may occur in the contact printing method. Non-contact printing methods include ink jet printing and aerosol jet printing. Since the non-contact printing method is a method of spraying the printing material through a fine nozzle (no nozzle), unlike the screen printing method, a liquid metal ink having a low viscosity is used. Metallic inks are generally silver (Ag) inks, and metallo-organic decomposition in the form of ink in which silver nanoparticles are dispersed in a solvent or silver compounds dissolved in an organic solvent to prevent clogging of the spray nozzle during printing. ) Use ink.
하지만 비접촉식 인쇄법에 사용되는 종래의 은 잉크만으로는 반사방지막을 에칭할 수 없기 때문에 은 잉크를 인쇄하기 전에 SiNx 반사방지막을 에칭할 수 있는 물질을 먼저 인쇄하는 공정이 필요하다. 따라서 종래의 은 잉크를 사용한 비접촉식 인쇄는 두 단계 공정이 필요해지므로 전체 공정의 효율성이 떨어지고 공정 단가가 상승하는 문제가 있다. 한 번의 비접촉식 인쇄로 전면전극을 형성하기 위해 SiNx 반사방지막을 에칭할 수 있는 유리 나노 분말을 은 잉크에 혼합하는 방법이 고려되고 있으나, 유리 나노 분말의 제조 비용과 혼합이 어려운 문제점이 있다.
However, since the anti-reflection film cannot be etched only by the conventional silver ink used in the non-contact printing method, a process of first printing a material capable of etching the SiN x anti-reflection film is necessary before printing the silver ink. Therefore, the conventional non-contact printing using the silver ink requires a two-step process, there is a problem that the efficiency of the overall process is lowered and the process cost is increased. Although a method of mixing glass nanopowders capable of etching a SiN x antireflection film into silver ink has been considered in order to form a front electrode by one non-contact printing, there is a problem in that manufacturing costs and mixing of glass nanopowders are difficult.
이에 본 발명자들은 비접촉식 인쇄법을 통해 보다 효율적으로 실리콘 태양전지의 전면전극 형성을 수행할 수 있는 방법을 개발하고자 예의 노력한 결과, 금속 잉크에 액상형태의 유리상 형성제를 첨가하여 SiNx 반사방지막의 에칭 및 전면전극 형성을 한 번의 비접촉식 인쇄로 수행할 수 있음을 알아내고 본 발명을 완성하기에 이르렀다. Accordingly, the present inventors have made diligent efforts to develop a method of forming the front electrode of a silicon solar cell more efficiently through a non-contact printing method. As a result, by adding a liquid phase glass-forming agent to the metal ink, the etching of the SiN x antireflection film is performed. And finding that the front electrode formation can be performed in one contactless printing, the present invention has been completed.
이에 본 발명에서는 한 번의 비접촉식 인쇄로 SiNx 반사방지막의 에칭과 전면전극 형성을 동시에 수행할 수 있는 금속 잉크에 포함되는 유리상 형성제를 제공하고자 한다.
Accordingly, the present invention is to provide a glass-forming agent included in a metal ink capable of simultaneously performing the etching of the SiN x anti-reflection film and the formation of the front electrode by one contactless printing.
상기 과제를 해결하기 위하여 본 발명에서는 유리상 형성용 금속화합물 및 이를 용해할 수 있는 유기용매를 포함하는 실리콘 태양전지의 전면전극 형성용 유리상 형성제가 제공된다. In order to solve the above problems, the present invention provides a glass phase former for forming a front electrode of a silicon solar cell including a metal compound for forming a glass phase and an organic solvent capable of dissolving the same.
본 발명의 일실시예에 따르면, 상기 유리상 형성용 금속화합물은 금속질산염, 금속아세트산염 및 이들의 수화물로부터 선택되는 하나 이상일 수 있다. According to an embodiment of the present invention, the glass phase forming metal compound may be at least one selected from metal nitrate, metal acetate, and hydrates thereof.
본 발명의 일실시예에 따르면, 상기 유기용매는 알콜류, 폴리하이드릭알콜류, 에테르류, 글리콜에테르류로 이루어진 군으로부터 선택되는 것일 수 있다. According to one embodiment of the present invention, the organic solvent may be selected from the group consisting of alcohols, polyhydric alcohols, ethers, glycol ethers.
본 발명의 다른 측면에 따르면, 상기 본 발명에 따른 유리상 형성제; 및 금속 나노입자 또는 금속화합물을 포함하는 실리콘 태양전지 전면전극 형성용 금속 잉크 조성물이 제공될 수 있다. According to another aspect of the invention, the glass phase former according to the present invention; And a metal ink composition for forming a silicon solar cell front electrode comprising a metal nanoparticle or a metal compound may be provided.
본 발명의 일실시예에 따르면, 상기 금속 나노입자는 은 나노입자이고, 상기 금속화합물은 은 화합물일 수 있다. According to one embodiment of the invention, the metal nanoparticles are silver nanoparticles, the metal compound may be a silver compound.
본 발명의 또 다른 측면에 따르면, 상기 본 발명에 따른 유리상 형성제가 포함된 금속 잉크 조성물이 인쇄되어 형성된 전면전극을 구비하는 실리콘 태양전지가 제공될 수 있다. According to another aspect of the present invention, a silicon solar cell having a front electrode formed by printing the metal ink composition including the glass-forming agent according to the present invention may be provided.
본 발명의 일실시예에 따르면, 상기 유리상 형성제를 포함한 금속 잉크가 비접촉식 인쇄법으로 인쇄된 것일 수 있다.
According to one embodiment of the invention, the metal ink including the glass-forming agent may be printed by a non-contact printing method.
본 발명에 따르면 한 번의 비접촉식 인쇄를 통해 실리콘 태양전지의 전면전극을 형성하는 공정을 단순화할 수 있고, 종래 사용되던 스크린 인쇄법에 의한 전면전극 형성보다 수율을 높일 수 있는 동시에 미세 금속 회로를 구현할 수 있는 실리콘 태양전지의 전면전극 형성용 금속 잉크가 제공될 수 있다.
According to the present invention, it is possible to simplify the process of forming the front electrode of the silicon solar cell through a single non-contact printing, and to increase the yield compared to the front electrode formed by the screen printing method, which is conventionally used, and to implement a fine metal circuit. Metal ink for forming a front electrode of a silicon solar cell can be provided.
도 1은 SiNx 반사방지막이 코팅된 실리콘 웨이퍼 위에 유리상 형성제가 포함되지 않은 은 잉크를 도포하고 800oC에서 열처리한 단면 FE-SEM 사진(좌) 및 유리상 형성제(질산납과 질산아연육수화물)가 포함된 은 잉크를 도포하고 800oC에서 열처리한 실리콘 웨이퍼의 단면 FE-SEM 사진(우)이다. 유리상 형성제가 첨가되지 않은 경우와 달리 본 발명이 제공하는 유리상 형성제가 첨가된 경우에는 반사방지막이 에칭되어 실리콘 웨이퍼의 계면에 은 결정립이 생성된 것을 보여주고 있다.
도 2는 실시예 1의 제조예 1에 따라 제조된 유리상 형성제가 포함된 은 화합물 잉크를 SiNx 반사방지막이 코팅된 실리콘 웨이퍼 위에 도포하고 800oC에서 각각 5분 및 10분간 열처리한 실리콘 웨이퍼의 계면에 은 결정립이 형성된 단면 FE-SEM 사진이다.
도 3은 실시예 1의 제조예 2에 따라 제조된 유리상 형성제가 포함된 은 화합물 잉크를 SiNx 반사방지막이 코팅된 실리콘 웨이퍼 위에 도포하고 800oC에서 각각 5분 및 10분간 열처리한 실리콘 웨이퍼의 계면에 은 결정립이 형성된 단면 FE-SEM 사진이다.
도 4는 실시예 2의 제조예 1에 따라 제조된 유리상 형성제가 포함된 은 나노입자 잉크를 SiNx 반사방지막이 코팅된 실리콘 웨이퍼 위에 도포하고 800oC에서 1분간 열처리한 실리콘 웨이퍼의 계면에 은 결정립이 형성된 단면 FE-SEM 사진이다.
도 5는 실시예 3의 제조예 1에 따라 제조된 유리상 형성제가 포함된 은 나노입자 잉크를 SiNx 반사방지막이 코팅된 실리콘 웨이퍼 위에 도포하고 800oC에서 1분간 열처리한 실리콘 웨이퍼의 계면에 은 결정립이 형성된 단면 FE-SEM 사진이다.1 is a cross-sectional FE-SEM photograph (left) and a glass phase former (lead nitrate and zinc nitrate hexahydrate) coated with a silver ink without a glass phase former on a silicon wafer coated with SiN x antireflection film and heat-treated at 800 ° C. ) Is a cross-sectional FE-SEM photograph (right) of a silicon wafer coated with silver ink and heat-treated at 800 ° C. Unlike the case where the glass phase former is not added, when the glass phase former provided by the present invention is added, the antireflection film is etched to show that silver crystal grains are formed at the interface of the silicon wafer.
FIG. 2 is a view of a silicon wafer coated with a SiN x antireflective coating on a silicon wafer coated with a silver compound ink prepared according to Preparation Example 1 of Example 1 and heat-treated at 800 ° C. for 5 minutes and 10 minutes, respectively. It is a sectional FE-SEM photograph in which silver crystal grains were formed in the interface.
FIG. 3 shows a silicon wafer coated with a SiN x anti-reflective coating on a silicon wafer coated with a silver compound ink prepared according to Preparation Example 2 of Example 1 and heat-treated at 800 ° C. for 5 minutes and 10 minutes, respectively. It is a sectional FE-SEM photograph in which silver crystal grains were formed in the interface.
FIG. 4 is a silver nanoparticle ink including a glass-forming agent prepared according to Preparation Example 1 of Example 2 on a silicon wafer coated with a SiN x antireflection film and subjected to heat treatment at 800 ° C. for 1 minute. It is a cross-sectional FE-SEM photograph in which crystal grains were formed.
5 is a silver nanoparticle ink including a glass-forming agent prepared according to Preparation Example 1 of Example 3 was applied on a silicon wafer coated with a SiN x antireflection film and subjected to a heat treatment at 800 ° C. for 1 minute to provide a silver on the interface of the silicon wafer. It is a cross-sectional FE-SEM photograph in which crystal grains were formed.
이하에서는 본 발명에 대하여 보다 구체적으로 설명한다.
Hereinafter, the present invention will be described in more detail.
본 발명에서는 유리상 형성용 금속화합물과 이를 용해할 수 있는 유기용매를 포함하는 실리콘 태양전지의 전면전극 형성용 유리상 형성제가 제공된다. 상기 유리상 형성제는 실리콘 태양전지의 전면전극 형성을 위한 금속 잉크에 첨가되어 SiNx 반사방지막의 에칭과 전면전극 형성을 동시에 수행할 수 있도록 하는 역할을 한다. In the present invention, a glass phase former for forming a front electrode of a silicon solar cell including a metal compound for forming a glass phase and an organic solvent capable of dissolving the same. The glass-form forming agent is added to the metal ink for forming the front electrode of the silicon solar cell to serve to simultaneously perform the etching of the SiN x antireflection film and the front electrode formation.
실리콘 태양전지의 전면전극은 전면전극 형성용 금속 잉크와 실리콘 웨이퍼의 반응을 통해서 형성된다. 이때 상기 금속 잉크에 포함된 유리상 형성제에 의해 실리콘 웨이퍼에 코팅된 SiNx 반사방지막이 에칭되고 잉크에 포함된 금속이 에미터층과 전기적으로 연결되어 전면전극을 형성한다. The front electrode of the silicon solar cell is formed through the reaction between the metal ink for forming the front electrode and the silicon wafer. At this time, the SiN x antireflection film coated on the silicon wafer is etched by the glass-forming agent included in the metal ink, and the metal included in the ink is electrically connected to the emitter layer to form the front electrode.
실리콘 태양전지의 전면전극을 형성하기 위한 금속 잉크로서 은(Ag) 잉크는 은 나노입자가 용매에 분산되어 있는 형태나 은 화합물이 유기용매에 녹아있는 형태의 잉크이다. 은 잉크를 사용하여 한 번의 비접촉식 인쇄로 실리콘 태양전지의 전면전극을 형성하기 위해서는 은 잉크가 열처리 중 실리콘 웨이퍼에 코팅된 SiNx 반사방지막을 에칭하고, 에미터층에 은 결정립을 형성할 수 있어야 한다. As a metal ink for forming a front electrode of a silicon solar cell, silver (Ag) ink is an ink in which silver nanoparticles are dispersed in a solvent or silver compounds are dissolved in an organic solvent. In order to form the front electrode of a silicon solar cell with one contactless printing using silver ink, SiN x coated on the silicon wafer during the heat treatment It should be possible to etch the antireflection film and to form silver grains in the emitter layer.
종래 비접촉식 인쇄법에 의한 실리콘 태양전지의 전면전극 형성을 위해서는 SiNx 반사방지막을 에칭할 수 있는 물질을 인쇄하여 먼저 에칭작업을 수행하고 은 잉크를 인쇄하는 두 단계를 거쳐야 했지만, 본 발명에 따른 유리상 형성제를 포함한 금속 잉크를 사용하면 한 번의 비접촉식 인쇄로 전면전극 형성이 가능하다. In order to form a front electrode of a silicon solar cell by a conventional non-contact printing method, a material capable of etching a SiN x antireflection film was first printed and then subjected to two steps of etching and printing silver ink. By using a metal ink containing a forming agent, the front electrode can be formed by one contactless printing.
은이 포함된 금속 잉크를 사용해서 한 번의 비접촉식 인쇄로 실리콘 웨이퍼에 코팅된 SiNx 반사방지막을 에칭하고, 은 결정립을 형성하여 전극을 한 번에 형성할 수 있도록 하기 위해서 은이 포함된 금속 잉크에 열처리 중 유리상(glass phase)을 형성할 수 있는 유리상 형성제를 첨가한다. 은 잉크에 유리 나노 분말을 직접 첨가하는 것이 아니라 열처리 공정 동안 유리상으로 변화하는 유리상 형성제를 첨가하는 것이므로 유리상 형성제는 유리상 형성용 금속화합물을 유기용매에 완전히 용해시킨 액상형태로 제공한다. SiN x coated on silicon wafers in one non-contact printing with metallic ink containing silver The anti-reflective film is etched, and a glass-forming agent capable of forming a glass phase during heat treatment is added to the metallic ink containing silver in order to form silver crystal grains so that the electrode can be formed at one time. The glass phase forming agent is provided in a liquid form in which the glass phase forming metal compound is completely dissolved in an organic solvent because the glass phase forming agent is added to the silver ink rather than directly adding the glass nano powder.
본 발명에 따른 액상형태의 유리상 형성제가 포함된 금속 잉크를 SiNx 반사방지막이 코팅된 실리콘 웨이퍼 위에 도포한 후 건조시켜 유기용매를 제거하고 열처리를 하게 되면 열처리 공정 동안에 유리상 형성제에 녹아있던 금속화합물이 금속산화물로 분해되면서 용융상을 이루어 SiNx 반사방지막의 에칭과 은 결정립의 형성에 역할을 한다. The metal ink containing the liquid phase glass-forming agent according to the present invention is SiN x It was then coated on the antireflection film-coated silicon wafer as drying to remove the organic solvent, and when the heat treatment the metal compound was dissolved in the glass phase-forming agent during the heat treatment step the decomposition of a metal oxide made of a melt phase SiN x It plays a role in the etching of the antireflection film and the formation of the silver grains.
상기 유리상 형성제로 작용할 수 있는 유리상 형성용 금속화합물로는 질산납(Pb(NO3)2), 질산아연(Zn(NO3)2), 질산비스무스(Bi(NO3)3)와 같은 금속질산염, 아세트산납(Pb(C2H3O2)4), 아세트산비스무스(Bi(C2H3O2)3) 등과 같은 금속아세트산염이 사용될 수 있다. 또한 상기 금속질산염 또는 금속아세트산염의 수화물도 효과적인 유리상 형성용 금속화합물로 사용될 수 있다. Examples of the metal compound for forming a glass phase that may act as the glass phase former include metal nitrates such as lead nitrate (Pb (NO 3 ) 2 ), zinc nitrate (Zn (NO 3 ) 2 ), and bismuth nitrate (Bi (NO 3 ) 3 ). , Metal acetates such as lead acetate (Pb (C 2 H 3 O 2 ) 4 ), bismuth acetate (Bi (C 2 H 3 O 2 ) 3 ), and the like may be used. Hydrates of the metal nitrates or metal acetates may also be used as effective metal phase forming compounds.
상기 금속화합물 중에서 납 화합물 또는 비스무스 화합물이 유리상 형성제의 주성분으로 포함되는 것이 바람직하다. 유리상의 구성 산화물은 납 혹은 비스무스, 실리콘 등의 산화물일 수 있는데, 이 중 실리콘 산화물은 유리상 형성제와 실리콘 웨이퍼의 반응에 의해 유리상에 포함될 수 있고, 납 또는 비스무스 산화물은 유리상 형성제를 구성하는 납 또는 비스무스 화합물이 열처리 동안 분해되어 유리상에 포함될 수 있다. It is preferable that a lead compound or a bismuth compound is contained as a main component of a glass phase former among the said metal compounds. The constituent oxide in the glass phase may be lead, or an oxide such as bismuth or silicon, wherein silicon oxide may be included in the glass phase by reaction of the glass phase former and the silicon wafer, and lead or bismuth oxide may be lead constituting the glass phase former. Or the bismuth compound may decompose during heat treatment and be included in the glass phase.
납과 비스무스의 산화물은 열처리 시 비교적 낮은 온도에서 유리상을 형성할 수 있기 때문에 상기 유리상 형성제의 주성분으로서 사용된다. 일반적으로 인쇄 후 전면전극을 형성시키기 위한 열처리는 수 초의 짧은 시간에 실시되는 것이어서 유리상이 낮은 온도에서 형성되는 것이 바람직하기 때문이다. Oxides of lead and bismuth are used as the main component of the glass phase former because they can form a glass phase at a relatively low temperature during heat treatment. In general, the heat treatment for forming the front electrode after printing is performed in a short time of several seconds, so that the glass phase is preferably formed at a low temperature.
또한 유리상을 형성하기 위한 상기의 주된 금속화합물과 아연 화합물과 같은 보조 금속화합물의 혼합 비율은 특정 범위에 한정되지 않는다. 다만 본 발명의 하기 실시예에서는 기존의 스크린 인쇄법에 사용되는 은 페이스트에 포함되어 있는 유리 분말의 조성을 참고하여 납과 아연의 금속화합물의 비율을 선정하여 실험에 사용하였다. 또한 하기 실시예에서는 보조 금속화합물로서 아연의 금속화합물을 사용하였지만 바람직한 유리상의 형성에 적합하다면 이에 한정되지 않는다. In addition, the mixing ratio of the said main metal compound and auxiliary metal compound, such as a zinc compound, for forming a glass phase is not limited to a specific range. However, in the following examples of the present invention, the ratio of the metal compound of lead and zinc was selected in reference to the composition of the glass powder contained in the silver paste used in the conventional screen printing method and used in the experiment. In addition, although the metal compound of zinc was used as an auxiliary metal compound in the following Example, if it is suitable for formation of a preferable glass phase, it is not limited to this.
질산납(Pb(NO3)2)과 질산아연육수화물(Zn(NO3)2·6H2O)을 유기용매에 완전히 녹여서 제조한 유리상 형성제를 은 잉크와 혼합하여 실리콘 웨이퍼에 도포하고, 은 잉크의 유기용매를 건조한 후 열처리를 하면 열처리 중 질산납과 질산아연육수화물이 각각 산화납과 산화아연으로 분해되고 두 산화물이 유리상을 이루어 SiNx 반사방지막의 에칭과 은 결정립을 형성하는데 역할을 하는 것이다.A glass-forming agent prepared by dissolving lead nitrate (Pb (NO 3 ) 2 ) and zinc nitrate hexahydrate (Zn (NO 3 ) 2 · 6H 2 O) completely in an organic solvent is mixed with silver ink and applied to a silicon wafer. When the organic solvent of silver ink is dried and then heat treated, lead nitrate and zinc nitrate hexahydrate are decomposed into lead oxide and zinc oxide, respectively, and the two oxides form a glass phase, which plays a role in etching the SiN x antireflection film and forming silver grains. It is.
도 1은 SiNx 반사방지막이 코팅된 실리콘 웨이퍼 위에 유리상 형성제가 포함되지 않은 은 잉크를 잉크젯 인쇄법으로 도포하고 800oC에서 열처리한 단면 FE-SEM 사진(좌)과 상기와 같이 유리상 형성제(질산납과 질산아연육수화물)가 포함된 은 잉크를 잉크젯 인쇄법으로 도포하고 800oC에서 열처리하여 웨이퍼 계면에 은 결정립이 형성된 단면 FE-SEM 사진(우)를 나타내었다. 유리상 형성제가 첨가되지 않은 경우와 달리 본 발명이 제공하는 유리상 형성제가 첨가된 경우에는 반사방지막이 에칭되어 실리콘 웨이퍼의 계면에 은 결정립이 생성된 것을 보여주고 있다. 이와 같이 유리상 형성제가 포함된 전면전극 형성용 금속 잉크는 SiNx 반사방지막이 코팅된 실리콘 웨이퍼에 한 번의 비접촉식 인쇄를 통해 전면전극이 형성될 수 있도록 한다.
1 is a cross-sectional FE-SEM photograph (left) coated with a silver ink containing no glass-forming agent on an SiN x anti-reflection film-coated silicon wafer by an inkjet printing method and heat-treated at 800 ° C. The silver ink containing lead nitrate and zinc nitrate hexahydrate) was applied by ink jet printing and heat-treated at 800 ° C. to show a cross-sectional FE-SEM photograph (right) in which silver grains were formed at the wafer interface. Unlike the case where the glass phase former is not added, when the glass phase former provided by the present invention is added, the antireflection film is etched to show that silver crystal grains are formed at the interface of the silicon wafer. As described above, the metal ink for forming the front electrode including the glass-forming agent enables the front electrode to be formed through a single non-contact printing on a silicon wafer coated with SiN x antireflection film.
이하에서는 실시예를 통하여 본 발명을 더욱 상세히 설명하고자 한다. 다만, 이들 실시예는 오로지 본 발명을 예시하기 위한 것으로서, 본 발명의 범위가 이들 실시예에 의해 제한되는 것으로 해석되지는 않는다 할 것이다.
Hereinafter, the present invention will be described in more detail with reference to Examples. However, these Examples are only for illustrating the present invention, and the scope of the present invention will not be construed as being limited by these Examples.
실시예Example 1: One: 질산납과Lead Nitrate 질산아연육수화물이Nitrate zinc hydrate 용해된 은 화합물 잉크 제조 Molten Silver Compound Ink Preparation
하기의 표 1과 같은 조성비로 질산납과 질산아연육수화물을 에틸렌글리콜 0.5 ml에 완전히 녹여 제조된 유리상 형성제 용액에 질산은(AgNO3) 0.2353 g을 완전히 녹여 은 화합물 잉크를 제조하였다.In the composition ratio as shown in Table 1 below, 0.2353 g of silver nitrate (AgNO 3 ) was completely dissolved in a glass-forming agent prepared by dissolving lead nitrate and zinc nitrate hexahydrate in 0.5 ml of ethylene glycol to prepare a silver compound ink.
실시예Example 2: 2: 질산납과Lead Nitrate 질산아연육수화물이Nitrate zinc hydrate 용해된 은 나노입자 잉크 제조 Dissolved Silver Nanoparticle Ink Preparation
하기의 표 2와 같은 조성비로 질산납과 질산아연육수화물을 에틸렌글리콜 2.0 ml에 완전히 녹여 유리상 형성제 용액을 제조한 후, 제조된 유리상 형성제 용액 0.05 ml와 은 나노입자 잉크(은 함량 0.2471 g)를 혼합하여 은 나노입자 잉크를 제조하였다.Lead nitrate and zinc nitrate hexahydrate were completely dissolved in 2.0 ml of ethylene glycol at the composition ratio as shown in Table 2 to prepare a glass-forming agent solution, and then 0.05 ml of the glass-forming agent solution prepared and silver nanoparticle ink (0.2471 g of silver content). ) Was mixed to prepare a silver nanoparticle ink.
실시예Example 3: 3: 아세트산납과With lead acetate 질산아연육수화물이Nitrate zinc hydrate 용해된 은 나노입자 잉크 제조 Dissolved Silver Nanoparticle Ink Preparation
하기의 표 3과 같은 조성비로 아세트산납과 질산아연육수화물을 에틸렌글리콜 2.0 ml에 완전히 녹여 유리상 형성제 용액을 제조한 후, 제조된 유리상 형성제 용액 0.05 ml와 은 나노입자 잉크(은 함량 0.2471 g)를 혼합하여 은 나노입자 잉크를 제조하였다.Lead acetate and zinc nitrate hexahydrate were completely dissolved in 2.0 ml of ethylene glycol at the composition ratio as shown in Table 3 to prepare a glass-forming agent solution, and then 0.05 ml of the glass-forming agent solution prepared and silver nanoparticle ink (0.2471 g of silver content). ) Was mixed to prepare a silver nanoparticle ink.
실시예Example 4: 실리콘 기판 위에 4: on the silicon substrate 잉크젯Inkjet 인쇄 print
상기 실시예 1 내지 3의 각각의 제조예에 따라 제조된 유리상 형성제를 첨가한 은 잉크를 SiNx 반사방지막이 80 nm 두께로 코팅된 단결정 실리콘 웨이퍼에 잉크젯 인쇄법으로 도포한 후 오븐(JEIO TECH사의 VO-10X)에서 유기용매를 건조하였다. 건조는 150℃에서 5분간 진행하였다.
The silver ink to which the glass-forming agent prepared according to the respective preparation examples of Examples 1 to 3 was applied to a single crystal silicon wafer coated with an SiN x antireflection film with a thickness of 80 nm by inkjet printing, followed by an oven (JEIO TECH VO-10X) was dried over an organic solvent. Drying was performed at 150 degreeC for 5 minutes.
실시예Example 5: 5: RTARTA 열처리와 계면 미세조직 관찰 Heat treatment and interfacial microstructure observation
실시예 4에서 건조된 실리콘 웨이퍼를 RTA(rapid thermal annealing) furnace(Korea Vacuum Tech LTD.)를 사용하여 800℃에서 1초, 1분, 5분, 10분 등 시간을 달리하여 열처리하였다. 도 2 및 3은 각각 실시예 1의 제조예 1 및 2에 따라 제조된 유리상 형성제가 포함된 은 화합물 잉크를 도포하고 5분 및 10분간 열처리한 실리콘 웨이퍼의 단면을 전계방출형 주사전자현미경(FESEM)으로 관찰한 것이다. 제조예 1과 2에서 보는 바와 같이 유리상 형성용 금속화합물로 사용된 질산납과 질산아연육수화물의 혼합비가 크게 변화하여도 열처리 공정을 통해 SiNx 반사방지막이 에칭되고 실리콘 웨이퍼 표면에 은 결정립(Ag crystallite)이 형성된 것을 확인할 수 있다. 또한 두 제조예 각각의 유리상 형성제를 첨가한 경우 800oC에서 1초간 열처리한 경우에도 SiNx 반사방지막이 에칭되고 실리콘 웨이퍼 표면에 미세한 은 결정립(Ag crystallite)이 형성된 것을 확인할 수 있었다.The silicon wafer dried in Example 4 was heat-treated at 800 ° C. for 1 second, 1 minute, 5 minutes, 10 minutes, etc. using a rapid thermal annealing (RTA) furnace (Korea Vacuum Tech LTD.). 2 and 3 are field emission scanning electron microscopes (FESEM) of cross-sections of silicon wafers coated with a silver compound ink containing a glass-forming agent prepared according to Preparation Examples 1 and 2 of Example 1, and heat-treated for 5 minutes and 10 minutes, respectively. ). As shown in Preparation Examples 1 and 2, even though the mixing ratio of lead nitrate and zinc nitrate hexahydrate used as the metal compound for forming a glass phase changed significantly, the SiN x antireflection film was etched through the heat treatment process and silver grains (Ag) were deposited on the silicon wafer surface. crystallite) is formed. In addition, when the glass-forming agents of each of the two preparation examples were added, the SiN x anti-reflection film was etched even after 1 second heat treatment at 800 ° C., and fine silver crystallites were formed on the silicon wafer surface.
도 4 및 5는 실시예 2 및 3의 각각의 제조예에 따라 제조된 유리상 형성제가 포함된 은 나노입자 잉크를 SiNx 반사방지막이 코팅된 실리콘 웨이퍼에 도포하고 각각 1분간 열처리한 실리콘 웨이퍼의 단면을 나타낸 것이다. 유리상 형성용 금속화합물로서 질산납 대신 아세트산납을 사용한 경우에도 동일하게 SiNx 반사방지막이 에칭되고 실리콘 웨이퍼 표면에 은 결정립(Ag crystallite)이 형성된 것을 확인할 수 있다.
4 and 5 are cross-sectional views of silicon wafers in which silver nanoparticle inks containing a glass-forming agent prepared according to the respective preparation examples of Examples 2 and 3 were applied to a silicon wafer coated with a SiN x antireflection film and then heat-treated for 1 minute, respectively. It is shown. In the case of using lead acetate instead of lead nitrate as the metal compound for forming the glass phase, the SiN x antireflection film was etched and silver crystallites were formed on the surface of the silicon wafer.
이상으로 본 발명 내용의 특정한 부분을 상세히 기술하였는바, 당업계의 통상의 지식을 가진 자에게 있어서, 이러한 구체적 기술은 단지 바람직한 실시 양태일 뿐이며, 이에 의해 본 발명의 범위가 제한되는 것이 아닌 점은 명백할 것이다. 따라서 본 발명의 실질적인 범위는 첨부된 청구항들과 그것들의 등가물에 의하여 정의된다고 할 것이다.
While the present invention has been particularly shown and described with reference to specific embodiments thereof, those skilled in the art will appreciate that such specific embodiments are merely preferred embodiments and that the scope of the present invention is not limited thereby. something to do. Thus, the substantial scope of the present invention will be defined by the appended claims and their equivalents.
Claims (7)
A glass phase former for forming a front electrode of a silicon solar cell comprising a metal compound for forming a glass phase and an organic solvent capable of dissolving the same.
The glass phase former for forming a front electrode of a silicon solar cell according to claim 1, wherein the metal compound for forming a glass phase is at least one selected from metal nitrates, metal acetates, and hydrates thereof.
The glass phase former for forming a front electrode of a silicon solar cell according to claim 1, wherein the organic solvent is selected from the group consisting of alcohols, polyhydric alcohols, ethers, and glycol ethers.
Glass phase former according to any one of claims 1 to 3; And a metal ink composition for forming a front electrode of a silicon solar cell including metal nanoparticles or a metal compound.
The metal ink composition of claim 4, wherein the metal nanoparticles are silver nanoparticles, and the metal compound is a silver compound.
A silicon solar cell comprising a front electrode formed by printing a metal ink composition for forming a silicon solar cell front electrode including the glass phase forming agent according to any one of claims 1 to 3.
The silicon solar cell of claim 6, wherein the metal ink including the glass-forming agent is printed by a non-contact printing method.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/169,515 US9249319B2 (en) | 2010-06-29 | 2011-06-27 | Liquid additive for etching silicon nitride and silicon oxide layers, metal ink containing the same, and method of manufacturing silicon solar cell electrodes |
| KR1020110063173A KR101293771B1 (en) | 2010-06-29 | 2011-06-28 | Liquid additive for etching silicon nitride and silicon oxide layers, metal ink containing the same, and method of manufacturing silicon solar cell electrodes |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020100062329 | 2010-06-29 | ||
| KR20100062329 | 2010-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20120001589A true KR20120001589A (en) | 2012-01-04 |
Family
ID=45609269
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020110016196A KR20120001589A (en) | 2010-06-29 | 2011-02-23 | Glass phase forming agent, metal ink composition with the same for front electrode of silicon solar cell, and silicon solar cell using the same |
| KR1020110063173A KR101293771B1 (en) | 2010-06-29 | 2011-06-28 | Liquid additive for etching silicon nitride and silicon oxide layers, metal ink containing the same, and method of manufacturing silicon solar cell electrodes |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020110063173A KR101293771B1 (en) | 2010-06-29 | 2011-06-28 | Liquid additive for etching silicon nitride and silicon oxide layers, metal ink containing the same, and method of manufacturing silicon solar cell electrodes |
Country Status (1)
| Country | Link |
|---|---|
| KR (2) | KR20120001589A (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3522639B2 (en) | 1994-05-13 | 2004-04-26 | 株式会社半導体エネルギー研究所 | Method for manufacturing semiconductor device and method for manufacturing liquid crystal display device |
| GB0601318D0 (en) * | 2006-01-23 | 2006-03-01 | Imp Innovations Ltd | Method of etching a silicon-based material |
| JP2007327109A (en) | 2006-06-08 | 2007-12-20 | Chemiprokasei Kaisha Ltd | Metal nanocolloidal composition, ink comprising the same and method for forming metal pattern using the same |
| GB2464158B (en) | 2008-10-10 | 2011-04-20 | Nexeon Ltd | A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
-
2011
- 2011-02-23 KR KR1020110016196A patent/KR20120001589A/en active Search and Examination
- 2011-06-28 KR KR1020110063173A patent/KR101293771B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| KR101293771B1 (en) | 2013-08-06 |
| KR20120001677A (en) | 2012-01-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI559372B (en) | Epitaxial structures, methods of forming the same, and devices including the same | |
| KR101543046B1 (en) | Layered contact structure for solar cells | |
| TWI604513B (en) | Composition for forming p-type diffusion layer, method of producing silicon substrate having p-type diffusion layer, method of producing photovoltaic cell element, and photovoltaic cell | |
| JP6185232B2 (en) | Use of conductive compositions containing lead-tellurium-based oxides in the manufacture of semiconductor devices with lightly doped emitters | |
| US8759144B2 (en) | Fabrication of contacts for silicon solar cells including printing burn through layers | |
| EP2662900B1 (en) | Solar cell, manufacturing method thereof, and solar cell module | |
| RU2499810C2 (en) | Conductive pastes with organometallic modifiers | |
| US20120142140A1 (en) | Nanoparticle inks for solar cells | |
| JP6114630B2 (en) | Method for manufacturing crystalline silicon solar cell | |
| US8895348B2 (en) | Methods of forming a high efficiency solar cell with a localized back surface field | |
| JP2013503443A (en) | Silver thick film paste composition and its use in solar cell conductors | |
| TWI591652B (en) | A conductive paste containing lead-free glass frit | |
| TWI521548B (en) | A conductive paste containing lead-free glass frit | |
| TWI505294B (en) | A conductive paste containing lead-free glass frit | |
| US9847437B1 (en) | Method of forming conductive electrode grids over silicon wafer surfaces | |
| JP2012094739A (en) | Deposition method and method of manufacturing semiconductor device | |
| KR20120001589A (en) | Glass phase forming agent, metal ink composition with the same for front electrode of silicon solar cell, and silicon solar cell using the same | |
| TW201331991A (en) | N-type diffusion layer forming composition, n-type diffusion layer forming composition set, method for producing semiconductor substrate having n-type diffusion layer, and method for producing photovoltaic cell element | |
| US10026862B2 (en) | Interdigitated back contact metal-insulator-semiconductor solar cell with printed oxide tunnel junctions | |
| KR20120086389A (en) | Conductive pastes for electrodes of solar cell and methods of manufacturing solar cells using the conductive pastes | |
| TWI559336B (en) | Conductive paste for solar cell processes | |
| EP3702048B1 (en) | Method for drying polyimide paste and method for producing solar cells capable of highly-efficient photoelectric conversion | |
| TW201705500A (en) | Conductive paste and process for forming an electrode on a p-type emitter on an n-type base semiconductor substrate | |
| TW201731115A (en) | Conductive silver paste for solar cell manufacturing process preventing damage caused by thermal stress and avoiding wire expansion to enhance mechnical strength and improve production yield | |
| JP2015179866A (en) | P-type diffusion layer formation composition, and solar cell and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination |