KR20110137132A - Cleaning agent composition for removing solder flux - Google Patents
Cleaning agent composition for removing solder flux Download PDFInfo
- Publication number
- KR20110137132A KR20110137132A KR1020100057176A KR20100057176A KR20110137132A KR 20110137132 A KR20110137132 A KR 20110137132A KR 1020100057176 A KR1020100057176 A KR 1020100057176A KR 20100057176 A KR20100057176 A KR 20100057176A KR 20110137132 A KR20110137132 A KR 20110137132A
- Authority
- KR
- South Korea
- Prior art keywords
- compound
- group
- weight
- flux
- ether acetate
- Prior art date
Links
- 230000004907 flux Effects 0.000 title claims abstract description 85
- 239000000203 mixture Substances 0.000 title claims abstract description 58
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 46
- 239000012459 cleaning agent Substances 0.000 title claims abstract 3
- -1 amine compound Chemical class 0.000 claims abstract description 49
- 238000004140 cleaning Methods 0.000 claims abstract description 45
- 150000001875 compounds Chemical class 0.000 claims abstract description 37
- 239000008096 xylene Substances 0.000 claims abstract description 12
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims abstract description 11
- 150000002894 organic compounds Chemical class 0.000 claims abstract description 6
- 125000003396 thiol group Chemical group [H]S* 0.000 claims abstract description 5
- 230000007797 corrosion Effects 0.000 claims description 42
- 238000005260 corrosion Methods 0.000 claims description 42
- 239000003112 inhibitor Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 20
- 125000004432 carbon atom Chemical group C* 0.000 claims description 19
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 16
- 125000000217 alkyl group Chemical group 0.000 claims description 15
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 12
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims description 10
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 claims description 8
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 claims description 7
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical compound CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 6
- SHLSSLVZXJBVHE-UHFFFAOYSA-N 3-sulfanylpropan-1-ol Chemical compound OCCCS SHLSSLVZXJBVHE-UHFFFAOYSA-N 0.000 claims description 6
- XLSZMDLNRCVEIJ-UHFFFAOYSA-N 4-methylimidazole Chemical compound CC1=CNC=N1 XLSZMDLNRCVEIJ-UHFFFAOYSA-N 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 claims description 6
- KLSJWNVTNUYHDU-UHFFFAOYSA-N Amitrole Chemical group NC1=NC=NN1 KLSJWNVTNUYHDU-UHFFFAOYSA-N 0.000 claims description 5
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 claims description 4
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims description 4
- 239000012964 benzotriazole Substances 0.000 claims description 4
- PJUIMOJAAPLTRJ-UHFFFAOYSA-N monothioglycerol Chemical compound OCC(O)CS PJUIMOJAAPLTRJ-UHFFFAOYSA-N 0.000 claims description 4
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims description 4
- 239000000600 sorbitol Substances 0.000 claims description 4
- 229940035024 thioglycerol Drugs 0.000 claims description 4
- AXJZCJSXNZZMDU-UHFFFAOYSA-N (5-methyl-1h-imidazol-4-yl)methanol Chemical compound CC=1N=CNC=1CO AXJZCJSXNZZMDU-UHFFFAOYSA-N 0.000 claims description 3
- JVVRJMXHNUAPHW-UHFFFAOYSA-N 1h-pyrazol-5-amine Chemical compound NC=1C=CNN=1 JVVRJMXHNUAPHW-UHFFFAOYSA-N 0.000 claims description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 3
- LJDSTRZHPWMDPG-UHFFFAOYSA-N 2-(butylamino)ethanol Chemical compound CCCCNCCO LJDSTRZHPWMDPG-UHFFFAOYSA-N 0.000 claims description 3
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 3
- CUFCLMBCQAMQES-UHFFFAOYSA-N 3-[2-(2,3-dihydroxypropylsulfanyl)ethenylsulfanyl]propane-1,2-diol Chemical group OC(CSC=CSCC(CO)O)CO CUFCLMBCQAMQES-UHFFFAOYSA-N 0.000 claims description 3
- BLFRQYKZFKYQLO-UHFFFAOYSA-N 4-aminobutan-1-ol Chemical compound NCCCCO BLFRQYKZFKYQLO-UHFFFAOYSA-N 0.000 claims description 3
- CMGDVUCDZOBDNL-UHFFFAOYSA-N 4-methyl-2h-benzotriazole Chemical compound CC1=CC=CC2=NNN=C12 CMGDVUCDZOBDNL-UHFFFAOYSA-N 0.000 claims description 3
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 claims description 3
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 3
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 3
- 229930195725 Mannitol Natural products 0.000 claims description 3
- PVCJKHHOXFKFRP-UHFFFAOYSA-N N-acetylethanolamine Chemical compound CC(=O)NCCO PVCJKHHOXFKFRP-UHFFFAOYSA-N 0.000 claims description 3
- AKNUHUCEWALCOI-UHFFFAOYSA-N N-ethyldiethanolamine Chemical compound OCCN(CC)CCO AKNUHUCEWALCOI-UHFFFAOYSA-N 0.000 claims description 3
- OPKOKAMJFNKNAS-UHFFFAOYSA-N N-methylethanolamine Chemical compound CNCCO OPKOKAMJFNKNAS-UHFFFAOYSA-N 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- SLINHMUFWFWBMU-UHFFFAOYSA-N Triisopropanolamine Chemical compound CC(O)CN(CC(C)O)CC(C)O SLINHMUFWFWBMU-UHFFFAOYSA-N 0.000 claims description 3
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 claims description 3
- 125000002777 acetyl group Chemical group [H]C([H])([H])C(*)=O 0.000 claims description 3
- 125000002009 alkene group Chemical group 0.000 claims description 3
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- LVTYICIALWPMFW-UHFFFAOYSA-N diisopropanolamine Chemical compound CC(O)CNCC(C)O LVTYICIALWPMFW-UHFFFAOYSA-N 0.000 claims description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims description 3
- 239000000594 mannitol Substances 0.000 claims description 3
- 235000010355 mannitol Nutrition 0.000 claims description 3
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 claims description 3
- XWESXZZECGOXDQ-UHFFFAOYSA-N n-tert-butylhydroxylamine Chemical compound CC(C)(C)NO XWESXZZECGOXDQ-UHFFFAOYSA-N 0.000 claims description 3
- KOUKXHPPRFNWPP-UHFFFAOYSA-N pyrazine-2,5-dicarboxylic acid;hydrate Chemical compound O.OC(=O)C1=CN=C(C(O)=O)C=N1 KOUKXHPPRFNWPP-UHFFFAOYSA-N 0.000 claims description 3
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims description 3
- NBOMNTLFRHMDEZ-UHFFFAOYSA-N thiosalicylic acid Chemical compound OC(=O)C1=CC=CC=C1S NBOMNTLFRHMDEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229940103494 thiosalicylic acid Drugs 0.000 claims description 3
- 229960004418 trolamine Drugs 0.000 claims description 3
- 239000000811 xylitol Substances 0.000 claims description 3
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 claims description 3
- 235000010447 xylitol Nutrition 0.000 claims description 3
- 229960002675 xylitol Drugs 0.000 claims description 3
- 125000003354 benzotriazolyl group Chemical group N1N=NC2=C1C=CC=C2* 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims 1
- 150000003464 sulfur compounds Chemical class 0.000 claims 1
- 238000005476 soldering Methods 0.000 abstract description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract description 4
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052717 sulfur Inorganic materials 0.000 abstract description 4
- 239000011593 sulfur Substances 0.000 abstract description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 abstract description 2
- 239000003795 chemical substances by application Substances 0.000 abstract 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical group C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 23
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 14
- 229910052782 aluminium Inorganic materials 0.000 description 13
- 239000000758 substrate Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 7
- 239000003599 detergent Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000011135 tin Substances 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 239000002529 flux (metallurgy) Substances 0.000 description 6
- 239000011133 lead Substances 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 238000012858 packaging process Methods 0.000 description 5
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 4
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- CWERGRDVMFNCDR-UHFFFAOYSA-N thioglycolic acid Chemical compound OC(=O)CS CWERGRDVMFNCDR-UHFFFAOYSA-N 0.000 description 4
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 230000001988 toxicity Effects 0.000 description 3
- 231100000419 toxicity Toxicity 0.000 description 3
- JQMFQLVAJGZSQS-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-N-(2-oxo-3H-1,3-benzoxazol-6-yl)acetamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)CC(=O)NC1=CC2=C(NC(O2)=O)C=C1 JQMFQLVAJGZSQS-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 229910000978 Pb alloy Inorganic materials 0.000 description 2
- 238000010669 acid-base reaction Methods 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000005456 alcohol based solvent Substances 0.000 description 2
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical group NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 1
- VXWYQEYFYNAZOD-UHFFFAOYSA-N 2-[3-[(4,4-difluoropiperidin-1-yl)methyl]-4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound FC1(F)CCN(CC2=NN(CC(=O)N3CCC4=C(C3)N=NN4)C=C2C2=CN=C(NC3CC4=C(C3)C=CC=C4)N=C2)CC1 VXWYQEYFYNAZOD-UHFFFAOYSA-N 0.000 description 1
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 description 1
- AFCARXCZXQIEQB-UHFFFAOYSA-N N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CCNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 AFCARXCZXQIEQB-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- JAWMENYCRQKKJY-UHFFFAOYSA-N [3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-ylmethyl)-1-oxa-2,8-diazaspiro[4.5]dec-2-en-8-yl]-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]methanone Chemical compound N1N=NC=2CN(CCC=21)CC1=NOC2(C1)CCN(CC2)C(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F JAWMENYCRQKKJY-UHFFFAOYSA-N 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 150000003839 salts Chemical group 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 150000003738 xylenes Chemical class 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/24—Hydrocarbons
- C11D7/247—Hydrocarbons aromatic
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Emergency Medicine (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Detergent Compositions (AREA)
Abstract
Description
본 발명은 반도체 제조 공정 중 플립 칩 패키징 공정(Flip Chip Packaging Process)에서의 땜납 공정에 사용되는 플럭스 제거용 세정제 조성물에 관한 것이다.
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flux removal detergent composition used in a soldering process in a flip chip packaging process in a semiconductor manufacturing process.
플립 칩 패키징 공정은 소형이면서 경량인 전자 제품의 제조를 위해 널리 사용되고 있다. 플립 칩 패키징 공정은 전자 부품의 크기 감소 및 포장 밀도 증가에 중요한 역할을 한다.Flip chip packaging processes are widely used for the manufacture of small, lightweight electronic products. Flip chip packaging processes play an important role in reducing the size and packaging density of electronic components.
일반적으로 플립 칩 패키징 공정은 전 공정에서 얻은 반도체 칩을 땜납에 의해 회로 기판에 전기적으로 결합시키는 단계를 포함한다. 통상 반도체 칩은 그 위에 형성된 땜납 범프(Solder Bump)에 의해 회로 기판에 전기적으로 결합된다.In general, a flip chip packaging process includes electrically bonding a semiconductor chip obtained in the previous process to a circuit board by soldering. Typically, a semiconductor chip is electrically coupled to a circuit board by solder bumps formed thereon.
땜납 범프는 회로 기판에 도포된 땜납 페이스트를 리플로우(Reflow) 시켜 형성된다.The solder bumps are formed by reflowing the solder paste applied to the circuit board.
땜납 페이스트는 땜납 분말 및 플럭스를 포함한다. 플럭스는 땜납 페이스트의 도포성(Printability)을 개선시키고, 땜납의 표면 또는 납땜되는 회로 기판 상의 산화물을 감소시키며, 땜납의 습윤성(Wettability) 및 전개성(Spreadability)을 증가시키는 역할을 한다.Solder pastes include solder powder and flux. The flux serves to improve the printability of the solder paste, reduce the oxide on the surface of the solder or the circuit board being soldered, and increase the wettability and spreadability of the solder.
이러한 플럭스는 일반적으로 로진 또는 이의 유도체 등의 베이스 수지; 유기산, 할로겐화물 등의 활성제; 및 용제 등으로 구성된다.Such fluxes are generally base resins such as rosin or derivatives thereof; Active agents such as organic acids and halides; And solvents and the like.
플럭스는 잔류시 땜납 접합의 신뢰성 및 보존 안정성 등에 악영향을 미칠 수 있으므로 땜납 공정 후에는 이의 세정을 위한 공정이 반드시 필요하다.Since the flux may adversely affect the reliability and storage stability of the solder joint when remaining, a process for cleaning thereof is necessary after the soldering process.
종래에는 플럭스 세정제로 불소계 또는 염소계 용제, 탄화 수소계 또는 알콜계 용제, 및 물 등이 사용되었다. 그러나 불소계 및 염소계 용제는 환경 문제와 인체에 대한 독성 문제가 있고, 탄화 수소계 및 알콜계 용제는 독성과 인화성 문제가 있으며, 물은 세정력이 불충분하여 더 이상 사용되기 어렵다.Conventionally, fluorine-based or chlorine-based solvents, hydrocarbon-based or alcohol-based solvents, water and the like have been used as flux cleaners. However, fluorine-based and chlorine-based solvents have environmental problems and toxicity to the human body, hydrocarbon-based and alcohol-based solvents have toxicity and flammability problems, water is insufficient cleaning ability is no longer used.
최근 대한민국 특허공개 제2008-114718호, 대한민국 특허등록 제805014호 및 대한민국 특허등록 제907568호 등을 통해, 플럭스 세정력이 우수하면서도 환경오염 및 독성의 문제가 없다고 기재된 기술들이 다수 제안되고 있으나, 땜납 범프 표면에 존재하는 플럭스 잔류물 등이 완전히 제거되지 않고, 회로 기판에 사용되는 금속이 부식되는 단점이 있다.
Recently, Korean Patent Publication No. 2008-114718, Republic of Korea Patent Registration No. 805014, and Republic of Korea Patent Registration No. 907568 have been proposed a number of technologies that have excellent flux cleaning power, but there is no problem of environmental pollution and toxicity, but solder bump Flux residues, etc. present on the surface are not completely removed, and the metal used for the circuit board is corroded.
본 발명은 땜납 플럭스 잔류물의 제거력이 우수한 세정제 조성물을 제공하는 것을 목적으로 한다.It is an object of the present invention to provide a cleaning composition having excellent removal ability of solder flux residues.
본 발명은 회로 기판에 사용되는 주석, 납, 은, 알루미늄 및 이들의 합금(배선포함) 등의 금속의 부식 방지에 유용한 세정제 조성물을 제공하는 것을 또 다른 목적으로 한다.
It is another object of the present invention to provide a cleaning composition useful for preventing corrosion of metals such as tin, lead, silver, aluminum, and alloys thereof (including wiring) used in circuit boards.
1. 유기아민 화합물 0.05 내지 10중량%; 자일렌 1 내지 40중량%; 글리콜 에테르 아세테이트계 화합물 35 내지 98.85중량%; 및 부식방지제 0.1 내지 15중량%를 포함하는 땜납 플럭스 제거용 세정제 조성물.1. 0.05 to 10 weight percent organic amine compound; 1 to 40% by weight of xylene; 35 to 98.85% by weight of a glycol ether acetate compound; And 0.1 to 15% by weight of a corrosion inhibitor.
2. 위 1에 있어서, 유기아민 화합물은 하기 화학식 1의 화합물, 화학식 2의 화합물 또는 이들의 혼합물인 땜납 플럭스 제거용 세정제 조성물:2. According to the above 1, the organic amine compound is a compound of formula 1, a compound of formula 2 or a mixture thereof solder flux removal cleaning composition:
(식 중, R1 및 R2는 각각 수소 원자, 아세틸기, 또는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 알칸올기이고; R3는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 알콕시기이거나, 탄소수가 2 내지 6인 직쇄 또는 분지쇄의 알켄기이며; n은 0 또는 1임),(Wherein R 1 and R 2 are each a hydrogen atom, an acetyl group, or a straight or branched chain alkyl or alkanol group having 1 to 6 carbon atoms; R 3 is a straight or branched chain alkyl group having 1 to 6 carbon atoms) Or an alkoxy group or a straight or branched chain alkene group having 2 to 6 carbon atoms; n is 0 or 1),
(식 중, R4, R5, R6 및 R7은 각각 수소원자 또는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 탄소수가 2 내지 6인 직쇄 또는 분지쇄의 알켄기임).(Wherein R 4 , R 5 , R 6 and R 7 each represent a hydrogen atom or a straight or branched chain alkyl group having 1 to 6 carbon atoms or a straight or branched chain alken group having 2 to 6 carbon atoms).
3. 위 2에 있어서, R3는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기인 땜납 플럭스 제거용 세정제 조성물.3. In the above 2, R 3 is a straight-chain or branched chain alkyl group having 1 to 6 carbon atoms, the solder flux removal cleaning composition.
4. 위 3에 있어서, 화학식 1의 화합물은 모노-, 디- 또는 트리-에탄올아민; 모노-, 디- 또는 트리-프로판올아민; 모노-, 디- 또는 트리-이소프로판올아민; 부탄올아민; 부틸모노에탄올아민; 에틸디에탄올아민; N-메틸아미노에탄올; N-아세틸에탄올아민; 하이드록실아민; tert-메틸하이드록실아민 및 tert-부틸하이드록실아민으로 이루어진 군에서 선택된 1종 이상의 것인 땜납 플럭스 제거용 세정제 조성물.4. In the above 3, the compound of Formula 1 is mono-, di- or tri-ethanolamine; Mono-, di- or tri-propanolamine; Mono-, di- or tri-isopropanolamine; Butanolamine; Butyl monoethanolamine; Ethyl diethanolamine; N-methylaminoethanol; N-acetylethanolamine; Hydroxylamine; Cleaner composition for solder flux removal of at least one selected from the group consisting of tert-methylhydroxylamine and tert-butylhydroxylamine.
5. 위 2에 있어서, R4, R5, R6 및 R7은 각각 탄소수가 1 내지 6인 직쇄의 알킬기인 땜납 플럭스 제거용 세정제 조성물.5. In the above 2, R 4 , R 5 , R 6 and R 7 is a solder flux removal cleaning composition, each of which is a linear alkyl group having 1 to 6 carbon atoms.
6. 위 5에 있어서, 화학식 2의 화합물은 테트라메틸암모늄하이드록사이드; 테트라에틸메틸암모늄하이드록사이드; 테트라프로필암모늄하이드록사이드; 및 테트라부틸암모늄하이드록사이드로 이루어진 군에서 선택된 1종 이상의 것인 땜납 플럭스 제거용 세정제 조성물.6. In the above 5, the compound of Formula 2 is tetramethylammonium hydroxide; Tetraethylmethylammonium hydroxide; Tetrapropylammonium hydroxide; And tetrabutylammonium hydroxide. The cleaning composition for solder flux removal of at least one member selected from the group consisting of tetrabutylammonium hydroxide.
7. 위 1에 있어서, 유기아민 화합물 2 내지 10중량%; 자일렌 1 내지 15중량%; 케톤계 화합물 65 내지 96.5중량%; 및 부식방지제 0.5 내지 10중량%를 포함하는 땜납 플럭스 제거용 세정제 조성물.7. according to the above 1, 2 to 10% by weight of an organic amine compound; 1 to 15% by weight of xylene; 65 to 96.5 weight% of a ketone compound; And 0.5 to 10% by weight of a corrosion inhibitor.
8. 위 1에 있어서, 글리콜 에테르 아세테이트계 화합물은 에틸글리콜 모노부틸에테르 아세테이트, 디에틸렌글리콜 모노부틸에테르 아세테이트, 에틸렌글리콜 모노에틸에테르 아세테이트 및 프로필렌글리콜 모노메틸에테르 아세테이트로 이루어지는 군에서 선택된 1종 이상의 것인 땜납 플럭스 제거용 세정제 조성물.8. In the above 1, the glycol ether acetate compound is at least one selected from the group consisting of ethyl glycol monobutyl ether acetate, diethylene glycol monobutyl ether acetate, ethylene glycol monoethyl ether acetate and propylene glycol monomethyl ether acetate Cleaner composition for phosphorus solder flux removal.
9. 위 1에 있어서, 부식방지제는 아졸기를 갖는 유기화합물, 방향족 하이드록시 화합물, 당알콜 화합물 및 머캅토기를 갖는 함황 화합물로 이루어진 군에서 선택된 1종 이상의 것인 땜납 플럭스 제거용 세정제 조성물.9. In the above 1, wherein the corrosion inhibitor is at least one member selected from the group consisting of an organic compound having an azole group, an aromatic hydroxy compound, a sugar alcohol compound and a sulfur-containing compound having a mercapto group.
10. 위 9에 있어서, 부식방지제는 벤조트리아졸, 톨리트리아졸, 4-메틸이미다졸, 5-하이드록시메틸-4-메틸이미다졸, 3-아미노디아졸, 카테콜, 레소시놀, 퀴놀린, 솔비톨, 마니톨, 트레오졸, 자일리톨, 디티오디글리세롤, 비스(2,3-디히드록시프로필티오)에틸렌, 2-메르캅토에탄올, 3-메르캅토-1-프로판올, 티오글리세롤, 티오글리콜산, 티오아세트산 및 티오살리실릭산로 이루어진 군에서 선택된 1종 이상의 것인 땜납 플럭스 제거용 세정제 조성물.
10. In the above 9, the corrosion inhibitor is benzotriazole, tolytriazole, 4-methylimidazole, 5-hydroxymethyl-4-methylimidazole, 3-aminodiazole, catechol, lesosi Knol, quinoline, sorbitol, mannitol, threazole, xylitol, dithiodiglycerol, bis (2,3-dihydroxypropylthio) ethylene, 2-mercaptoethanol, 3-mercapto-1-propanol, thioglycerol, Cleaning composition for solder flux removal of at least one selected from the group consisting of thioglycolic acid, thioacetic acid and thiosalicylic acid.
본 발명의 세정제 조성물은 각종 유형의 플럭스 잔류물, 예를 들어 땜납 범프 표면에 잔사 형태로 존재하는 플럭스, 범프와 회로 기판이 접하는 부분에 존재하는 플럭스, 열 변성된 플럭스, 이온 형태의 플럭스 등을 완벽히 제거할 수 있다.The cleaning composition of the present invention can be used to prepare various types of flux residues, for example, flux present in the form of residues on the surface of solder bumps, flux present in the contact area between bumps and circuit boards, thermally modified fluxes, and ionic fluxes. It can be removed completely.
본 발명의 세정제 조성물은 각 성분들을 적정 함량으로 포함함으로써 회로기판에 사용되는 주석, 납, 은 및 이들의 합금뿐만 아니라 회로기판 상에 형성되는 알루미늄 또는 알루미늄 합금 등의 금속배선의 부식 방지에 유용하고, 미세화 가공이 요구되는 고정밀 금속배선의 부식 방지에 특히 유용하다.The detergent composition of the present invention is useful for preventing corrosion of metal wiring such as aluminum or aluminum alloy formed on the circuit board as well as tin, lead, silver and alloys thereof used in the circuit board by including each component in an appropriate amount. In particular, it is particularly useful for preventing corrosion of high-precision metal wiring, which requires refinement.
또한, 본 발명의 세정제 조성물은 위와 같이 각종 유형의 플럭스 잔류물을 깨끗이 제거함으로써 회로 기판에 사용되는 주석, 주석 합금, 납, 납 합금, 은 및 은 합금 등 금속의 부식 방지에 유용하다. In addition, the cleaning composition of the present invention is useful for preventing corrosion of metals such as tin, tin alloys, lead, lead alloys, silver and silver alloys used in circuit boards by cleanly removing various types of flux residues as described above.
본 발명의 세정제 조성물은 위와 같이 각종 유형의 플럭스 잔류물을 깨끗이 제거함으로써 땜납이 장기적으로 유지될 수 있도록 한다.The cleaning composition of the present invention allows the solder to be maintained for a long time by cleanly removing various types of flux residues as above.
본 발명의 세정제 조성물은 땜납 범프와 회로 기판 간의 접착력을 저해시키지 않아 반도체 부품의 내구성 향상에 기여한다.The cleaning composition of the present invention does not inhibit the adhesion between the solder bumps and the circuit board, thereby contributing to the improvement of durability of the semiconductor component.
본 발명의 세정제 조성물은 세계 각국의 환경 규제에 부합할 뿐만 아니라 세정제 조성물의 제조 및 사용시 인체에 크게 유해하지 않은 장점도 있다.
The cleaning composition of the present invention not only conforms to environmental regulations of the world, but also has an advantage of not being significantly harmful to a human body when preparing and using the cleaning composition.
도 1은 본 발명의 일 실시예에 따른 세정제 조성물을 땜납 범프에 처리하기 전(도 1a)과 처리한 후(도 1b)의 땜납 범프 표면 SEM 사진이다.
도 2는 본 발명의 일 비교예에 따른 세정제 조성물을 처리한 후의 땜납 범프 표면 SEM 사진이다.1 is a SEM image of the solder bump surface before and after the cleaning composition (FIG. 1A) and after the treatment (FIG. 1B) of the cleaning composition according to one embodiment of the present invention.
Figure 2 is a SEM image of the solder bump surface after treating the cleaning composition according to a comparative example of the present invention.
본 발명은 유기아민 화합물, 자일렌, 글리콜 에테르 아세테이트계 화합물 및 부식방지제를 일정한 함량으로 포함함으로써 땜납 범프 표면에 잔사 형태로 존재하는 플럭스, 범프와 회로 기판이 접하는 부분에 존재하는 플럭스, 열 변성된 플럭스, 이온 형태의 플럭스 등의 각종 플럭스 잔류물을 완벽히 제거할 수 있고, 회로 기판에 사용되는 주석, 납, 은, 알루미늄 및 이들의 합금(배선포함) 등의 금속의 부식 방지에 유용한 땜납 플럭스 제거용 세정제 조성물에 관한 것이다.The present invention includes organic amine compounds, xylenes, glycol ether acetate-based compounds, and corrosion inhibitors in a predetermined amount, so that the flux present in the form of residues on the surface of the solder bumps, the flux present in the contact portion of the bumps and the circuit board, heat-modified Various flux residues such as fluxes and ionic fluxes can be completely removed, and solder flux removal useful for corrosion protection of metals such as tin, lead, silver, aluminum and their alloys (including wiring) used in circuit boards It relates to a detergent composition for cleaning.
이하 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail.
본 발명의 세정제 조성물은 유기아민 화합물 0.05 내지 10중량%; 자일렌 1 내지 40중량%; 글리콜 에테르 아세테이트계 화합물 35 내지 98.85중량%; 및 부식방지제 0.1 내지 15중량%를 포함한다.Detergent composition of the present invention is 0.05 to 10% by weight of the organic amine compound; 1 to 40% by weight of xylene; 35 to 98.85% by weight of a glycol ether acetate compound; And 0.1-15% by weight of corrosion inhibitor.
유기아민 화합물은 플럭스에 포함된 유기물의 탄소 결합을 끊는 역할을 한다. 유기아민 화합물의 염기성을 갖는 부분이 플럭스의 주성분인 산성계 로진과 산-염기 반응을 일으켜 플럭스의 점착력을 약화시킨다.The organic amine compound serves to break the carbon bond of the organic matter contained in the flux. The basic part of the organic amine compound causes an acid-base reaction with the acidic rosin which is the main component of the flux, thereby weakening the adhesive strength of the flux.
본 발명의 유기아민 화합물은 하기 화학식 1의 화합물, 화학식 2의 화합물 또는 이들의 혼합물일 수 있다:The organic amine compound of the present invention may be a compound of formula 1, a compound of formula 2 or a mixture thereof:
[화학식 1][Formula 1]
(식 중, R1 및 R2는 각각 수소 원자, 아세틸기, 또는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 알칸올기이고; R3는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 알콕시기이거나, 탄소수가 2 내지 6인 직쇄 또는 분지쇄의 알켄기이며; n은 0 또는 1임),(Wherein R 1 and R 2 are each a hydrogen atom, an acetyl group, or a straight or branched chain alkyl or alkanol group having 1 to 6 carbon atoms; R 3 is a straight or branched chain alkyl group having 1 to 6 carbon atoms) Or an alkoxy group or a straight or branched chain alkene group having 2 to 6 carbon atoms; n is 0 or 1),
[화학식 2][Formula 2]
(식 중, R4, R5, R6 및 R7은 각각 수소원자 또는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 탄소수가 2 내지 6인 직쇄 또는 분지쇄의 알켄기임).(Wherein R 4 , R 5 , R 6 and R 7 each represent a hydrogen atom or a straight or branched chain alkyl group having 1 to 6 carbon atoms or a straight or branched chain alken group having 2 to 6 carbon atoms).
화학식 2의 화합물은 화학식 1의 화합물보다 후술하는 글리콜 에테르계 화합물에 대한 용해도가 우수하다. 따라서 본 발명의 유기아민 화합물로 화학식 2의 화합물을 사용하는 경우(화학식 2의 화합물을 단독으로 사용하는 경우와 화학식 2의 화합물을 화학식 1의 화합물과 혼합 사용하는 경우)에는 본원의 효과 달성에 유리하다. 화학식 2의 화합물은 염 형태이기 때문에 화학식 1의 화합물에 비해 보다 쉽게 용해되고, 보다 다량의 염기 이온(OH-)을 생성시킬 수 있어, 보다 활발한 산-염기 반응을 일으킬 수 있기 때문이다.The compound of formula (2) is superior to the solubility in the glycol ether-based compound described later than the compound of formula (1). Therefore, when the compound of formula 2 is used as the organic amine compound of the present invention (when the compound of formula 2 is used alone and the compound of formula 2 is mixed with the compound of formula 1), it is advantageous to achieve the effects of the present application. Do. This is because the compound of formula (2) is in salt form, so that it is more easily dissolved than the compound of formula (1), and can generate a larger amount of base ions (OH − ), thereby causing a more active acid-base reaction.
화학식 1의 화합물을 사용하는 경우에는 R3가 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기인 화합물이 바람직하다. 이러한 화합물에는 모노-, 디- 또는 트리-에탄올아민; 모노-, 디- 또는 트리-프로판올아민; 모노-, 디- 또는 트리-이소프로판올아민; 부탄올아민; 부틸모노에탄올아민; 에틸디에탄올아민; N-메틸아미노에탄올; N-아세틸에탄올아민; 하이드록실아민 및 tert-메틸하이드록실아민; tert-부틸하이드록실아민으로 이루어진 군에서 선택된 1종 이상의 것이 포함된다.When using the compound of General formula (1), the compound whose R <3> is a C1-C6 linear or branched alkyl group is preferable. Such compounds include mono-, di- or tri-ethanolamine; Mono-, di- or tri-propanolamine; Mono-, di- or tri-isopropanolamine; Butanolamine; Butyl monoethanolamine; Ethyl diethanolamine; N-methylaminoethanol; N-acetylethanolamine; Hydroxylamine and tert-methylhydroxylamine; At least one selected from the group consisting of tert-butylhydroxylamine is included.
또한, 화학식 2의 화합물을 사용하는 경우에는 R4, R5, R6 및 R7이 각각 탄소수가 1 내지 6인 직쇄의 알킬기인 화합물이 바람직하다. 이러한 화합물에는 테트라메틸암모늄하이드록사이드; 테트라에틸메틸암모늄하이드록사이드; 테트라프로필암모늄하이드록사이드; 및 테트라부틸암모늄하이드록사이드로 이루어진 군에서 선택된 1종 이상의 것이 포함되는데, 이 중 테트라메틸암모늄하이드록사이드가 특히 바람직하다.In addition, when using the compound of General formula (2), the compound whose R <4> , R <5> , R <6> and R <7> are C1-C6 linear alkyl groups, respectively is preferable. Such compounds include tetramethylammonium hydroxide; Tetraethylmethylammonium hydroxide; Tetrapropylammonium hydroxide; And at least one selected from the group consisting of tetrabutylammonium hydroxide, of which tetramethylammonium hydroxide is particularly preferred.
유기아민 화합물은 총 조성물 함량에 대하여 0.05 내지 10중량%로 포함될 수 있고, 2 내지 10중량%로 포함되는 것이 바람직하다. 유기아민 화합물의 함량이 0.05중량% 미만이면 플럭스 등에 포함되는 산성 물질과의 반응성이 떨어져 세정 효과가 불충분할 수 있고, 10중량%를 초과하는 경우에는 염기의 활동도가 과다하게 증가되어 주석, 주석 합금, 납, 납 합금, 은, 은 합금, 알루미늄 및 알루미늄 합금 등의 금속 부식이 발생될 수 있을 뿐만 아니라 제거된 플럭스 성분이 재부착될 수도 있다.The organic amine compound may be included in the amount of 0.05 to 10% by weight based on the total composition content, preferably 2 to 10% by weight. If the content of the organic amine compound is less than 0.05% by weight, the reactivity with the acidic substances contained in the flux, etc. may be insufficient, and the cleaning effect may be insufficient. If the content of the organic amine compound is greater than 10% by weight, the activity of the base is excessively increased, resulting in tin, tin Metal corrosion, such as alloys, lead, lead alloys, silver, silver alloys, aluminum and aluminum alloys, may occur as well as the removed flux components may be reattached.
자일렌은 플럭스의 주성분인 로진을 잘 용해시켜 플럭스가 쉽게 제거될 수 있게 하고, 땜납 성분과 플럭스의 계면에 잘 침투되어 플럭스가 쉽게 분리 및 제거될 수 있게 한다.Xylene dissolves the rosin which is the main component of the flux well so that the flux can be easily removed, and the flux penetrates well at the interface between the solder component and the flux so that the flux can be easily separated and removed.
자일렌은 총 조성물 함량에 대하여 1 내지 40중량%가 포함될 수 있다. 다른 필수성분들의 역할에 영향을 주지 않는 범위 내에서 다량 포함될수록 플럭스 제거력은 우수해지나, 환경 규제나 인체에 대한 유해성 및 경제성을 고려하면 1 내지 15중량%가 포함되는 것이 바람직하고, 5 내지 10중량% 포함되는 것이 보다 바람직하다.Xylene may be included 1 to 40% by weight based on the total composition content. Flux removal ability is excellent as it is included in a large amount within the range that does not affect the role of other essential ingredients, but it is preferable to include 1 to 15% by weight in consideration of environmental regulations or human health and economics, 5 to 10 It is more preferably included by weight.
자일렌의 함량이 1중량% 미만이면 플럭스 제거력이 미달될 수 있고 40중량%를 초과하는 경우에는 회로 기판의 제조 과정에서 사용되는 접착제 및 플라스틱 부품을 팽윤 또는 용해시킬 수 있다.If the content of xylene is less than 1% by weight, the flux removal force may be insufficient, and if it is more than 40% by weight, the adhesive and plastic parts used in the manufacturing process of the circuit board may be swelled or dissolved.
글리콜 에테르 아세테이트계 화합물은 플럭스가 잘 용해되도록 하고, 회로 기판을 구성하는 각종 금속이 잘 부식되지 않도록 한다. 또한, 유기아민 화합물에서 유래하는 아민 이온의 활동도를 조절하여 아민에 의한 금속 부식을 막는다. 또한, 물에 대한 플럭스의 용해성을 향상시켜 린스 공정에서 물을 사용하는 경우 세정제 조성물에 의해 제거된 플럭스의 재부착을 방지하는 작용도 한다.The glycol ether acetate compounds allow the flux to dissolve well and prevent the various metals constituting the circuit board from corrosion well. In addition, the activity of the amine ions derived from the organic amine compound is controlled to prevent metal corrosion by the amine. It also serves to improve the solubility of the flux in water to prevent reattachment of the flux removed by the detergent composition when water is used in the rinse process.
글리콜 에테르 아세테이트계 화합물로는 본 발명이 속하는 분야에서 통상 사용되는 것들이 제한 없이 사용될 수 있으나, 에틸글리콜 모노부틸에테르 아세테이트, 디에틸렌글리콜 모노부틸에테르 아세테이트, 에틸렌글리콜 모노에틸에테르 아세테이트 및 프로필렌글리콜 모노메틸에테르 아세테이트로 이루어지는 군에서 선택된 1종 이상의 것이 바람직하게 사용될 수 있다. 위 화합물들 중 프로필렌글리콜 모노메틸에테르 아세테이트가 보다 바람직하다.As the glycol ether acetate compound, those conventionally used in the field of the present invention may be used without limitation, but ethyl glycol monobutyl ether acetate, diethylene glycol monobutyl ether acetate, ethylene glycol monoethyl ether acetate, and propylene glycol monomethyl ether One or more selected from the group consisting of acetates can be preferably used. Of the above compounds, propylene glycol monomethyl ether acetate is more preferred.
글리콜 에테르 아세테이트계 화합물은 다른 필수성분들의 함량을 고려하여 총 조성물 함량에 대하여 35 내지 98.85중량% 포함될 수 있고, 65 내지 96.5중량% 포함되는 것이 바람직하다. 상기 범위를 벗어나는 경우에는 각종 유형의 플럭스 잔류물의 제거력이 저하되거나 회로 기판에 사용되는 각종 금속의 부식이 발생될 수 있다. The glycol ether acetate compound may be included in an amount of 35 to 98.85% by weight and 65 to 96.5% by weight based on the total composition content in consideration of the content of other essential ingredients. If it is out of the above range, the removal force of various types of flux residues may be lowered or corrosion of various metals used in the circuit board may occur.
본 발명의 부식방지제는 회로 기판에 사용되는 금속(주석, 납 및 은)의 부식을 방지하며, 특히 회로 기판상에 형성된 알루미늄 등의 금속 배선의 부식을 방지하는 역할을 한다. 알루미늄 등의 금속 배선이 부식되면 배선폭이 줄어들어 전류량이 감소되거나, 단선되어 회로의 성능을 저하시킬 수 있다. The corrosion inhibitor of the present invention prevents corrosion of metals (tin, lead and silver) used in the circuit board, and in particular, serves to prevent corrosion of metal wiring such as aluminum formed on the circuit board. Corrosion of metal wires, such as aluminum, reduces the wire width, reducing the amount of current, or breaking the wires, which can degrade circuit performance.
부식방지제는 아졸기를 갖는 유기화합물, 방향족 하이드록시 화합물, 당 알콜 화합물 및 머캅토기를 갖는 함황 화합물로 이루어진 군에서 선택된 1종 이상의 것이 사용될 수 있다. 구체적으로 벤조트리아졸, 톨리트리아졸, 4-메틸이미다졸, 5-하이드록시메틸-4-메틸이미다졸 및 3-아미노디아졸 등의 아졸기를 갖는 유기화합물; 카테콜, 레소시놀 및 퀴놀린 등의 방향족 히드록시 화합물; 솔비톨, 마니톨, 트레오졸 및 자일리톨 등의 당 알콜 화합물; 디티오디글리세롤[S(CH2CH(OH)CH2(OH)2], 비스(2,3-디히드록시프로필티오)에틸렌[CH2CH2(SCH2CH(OH)CH2(OH)2], 2-메르캅토에탄올[HSCH2CH2(OH)], 3-메르캅토-1-프로판올[HSCH2CH2CH2OH], 티오글리세롤[HSCH2CH(OH)CH2(OH)], 티오글리콜산[HSCH2CO2H], 티오아세트산 및 티오살리실릭산 등의 머캅토기를 갖는 함황 화합물이 사용될 수 있다.Preservatives may be used at least one selected from the group consisting of organic compounds having azole groups, aromatic hydroxy compounds, sugar alcohol compounds and sulfur-containing compounds having mercapto groups. Specifically, an organic compound having an azole group such as benzotriazole, tolytriazole, 4-methylimidazole, 5-hydroxymethyl-4-methylimidazole and 3-aminodiazole; Aromatic hydroxy compounds such as catechol, resorcinol and quinoline; Sugar alcohol compounds such as sorbitol, mannitol, threazole and xylitol; Dithiodiglycerol [S (CH 2 CH (OH) CH 2 (OH) 2 ], bis (2,3-dihydroxypropylthio) ethylene [CH 2 CH 2 (SCH 2 CH (OH) CH 2 (OH)) 2 ], 2-mercaptoethanol [HSCH 2 CH 2 (OH)], 3-mercapto-1-propanol [HSCH 2 CH 2 CH 2 OH], thioglycerol [HSCH 2 CH (OH) CH 2 (OH) ], A sulfur-containing compound having a mercapto group such as thioglycolic acid [HSCH 2 CO 2 H], thioacetic acid and thiosalicylic acid can be used.
함량에 대한 성분의 활성을 고려하면 카테콜, 레소시놀 및 퀴놀린 등의 방향족 히드록시 화합물을 사용하는 것이 바람직하다.Considering the activity of the component on the content, it is preferable to use aromatic hydroxy compounds such as catechol, resorcinol and quinoline.
부식방지제는 다른 필수 성분들의 역할에 영향을 주지 않는 범위 내에서 다량 포함될수록 금속의 부식방지성은 우수해지나, 용해성을 고려하면 0.1 내지 15중량%가 포함되는 것이 바람직하고, 0.1 내지 10중량% 포함되는 것이 보다 바람직하다. 다만, 부식방지제의 종류와 용해성 등의 물성의 차이에 따라, 각 부식방지제의 최적 함량은 위 범위 내에서 다소 차이가 있을 수 있다. 예를 들어 아졸기를 갖는 유기화합물에 비해 당 알콜 화합물 및 방향족 하이드록시 화합물의 용해력이 우수하므로 동일 함량 사용시 부식방지 효과가 보다 우수하다.As the corrosion inhibitor is contained in a large amount within the range that does not affect the role of other essential components, the corrosion resistance of the metal is excellent, but considering the solubility, it is preferable to include 0.1 to 15% by weight, and includes 0.1 to 10% by weight. It is more preferable. However, depending on the types of corrosion inhibitors and physical properties such as solubility, the optimum content of each corrosion inhibitor may be slightly different within the above range. For example, since the solubility of the sugar alcohol compound and the aromatic hydroxy compound is superior to the organic compound having an azole group, the anticorrosive effect is better when the same content is used.
본 발명의 조성물에 포함된 부식방지제의 함량이 0.1중량% 미만인 경우에는 알루미늄 또는 알루미늄 합금 등의 금속배선의 부식방지 효과가 미미하고, 15중량%를 초과하는 경우에는 부식방지제가 석출되어 회로 기판을 오염시킬 수 있다.When the content of the corrosion inhibitor included in the composition of the present invention is less than 0.1% by weight, the corrosion protection effect of the metal wiring such as aluminum or aluminum alloy is insignificant, and when it exceeds 15% by weight, the corrosion inhibitor is precipitated to form a circuit board. Can be contaminated.
본 발명의 세정제 조성물은 통상의 방법에 따라 제조될 수 있고, 본 발명의 세정제 조성물을 사용하는 방법 또한 특정의 것으로 한정되지 않는다.The detergent composition of the present invention can be prepared according to a conventional method, and the method of using the detergent composition of the present invention is also not limited to the specific one.
본 발명의 세정제 조성물을 사용하여 땜납의 플럭스를 제거하는 방법으로는 예컨대, 플럭스가 포함된 회로기판을 세정제 조성물 또는 그 수용액에 직접 침적시키는 방법, 플럭스가 포함된 회로기판에 세정제 조성물 또는 그 수용액을 스프레이하는 방법, 플럭스가 포함된 회로기판을 세정제 조성물 또는 그 수용액에 접촉시킨 후 브러싱하는 방법 등이 있을 수 있고, 그 외에도 통상적인 샤워법, 패들법, 버블법, 초음파법 등도 생각해 볼 수 있다. 물론, 위 방법들을 복수 개 조합하여 사용할 수도 있다.As a method of removing the flux of the solder using the cleaning composition of the present invention, for example, a method of directly depositing a circuit board containing the flux in the cleaning composition or an aqueous solution thereof, or cleaning the cleaning composition or an aqueous solution thereof in the circuit board containing the flux There may be a method of spraying, a method of brushing the circuit board containing the flux after contacting the cleaning composition or an aqueous solution thereof, and in addition, a conventional shower method, paddle method, bubble method, ultrasonic method and the like can be considered. Of course, a plurality of the above methods may be used in combination.
본 발명의 세정제 조성물의 사용 조건(온도, 시간 등)은 특별히 한정되지 않으며, 각 성분의 함량, 농도 및 제거되어야 하는 플럭스의 종류와 농도 등에 따라 적절히 선택될 수 있다. 예를 들어, 반도체 플립 칩 패키징 공정에서는 20 내지 80℃에서 1 내지 30분간 수행될 수 있다.The conditions for use (temperature, time, etc.) of the cleaning composition of the present invention are not particularly limited, and may be appropriately selected depending on the content, concentration and type of flux to be removed. For example, the semiconductor flip chip packaging process may be performed at 20 to 80 ° C. for 1 to 30 minutes.
본 발명의 세정제 조성물이 사용된 후, 필요에 따라 물 또는 알코올계 용매로 추가 세정하는 린스 공정이 수행될 수 있다.After the cleaning composition of the present invention is used, a rinsing process of further cleaning with water or an alcoholic solvent may be performed as necessary.
본 발명의 조성물로 제거될 수 있는 플럭스는 로진을 주성분으로 하고 이에 활성제, 첨가제 및/또는 용매가 포함된 조성물에 의한 것을 포함하며 특정 성분을 반드시 포함해야 하는 것으로 한정되지 않는다.Fluxes that can be removed with the compositions of the present invention include, but are not limited to, those containing rosin based compositions and which must include certain components.
또한, 플럭스는 프린트 회로판, 세라믹 배선기판, 반도체 소자, 반도체 소자 탑재 기판, 범프 부착 TAB 테이프, 무범프 TAB 테이프, 반도체 소자 탑재 TAB 테이프, 리드프레임, 콘덴서 및 저항 등에 형성된 것을 포함한다.Flux also includes those formed on printed circuit boards, ceramic wiring boards, semiconductor devices, semiconductor device mounting boards, bumped TAB tapes, bumpless TAB tapes, semiconductor device mounted TAB tapes, leadframes, capacitors and resistors.
이하, 본 발명의 이해를 돕기 위하여 바람직한 실시예를 제시하나, 이들 실시예는 본 발명을 예시하는 것일 뿐 첨부된 특허청구범위를 제한하는 것이 아니며, 본 발명의 범주 및 기술사상 범위 내에서 실시예에 대한 다양한 변경 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속하는 것도 당연한 것이다.
Hereinafter, preferred examples are provided to aid the understanding of the present invention, but these examples are merely illustrative of the present invention and are not intended to limit the scope of the appended claims. It is apparent to those skilled in the art that various changes and modifications can be made to the present invention, and such modifications and changes belong to the appended claims.
실시예 및 비교예Examples and Comparative Examples
하기 표 1의 성분들을 혼합 및 교반하여 실시예 1-20 및 비교예 1-8의 땜납 플럭스 제거용 세정제 조성물을 각각 제조하였다.The components of Table 1 were mixed and stirred to prepare solder flux removal compositions of Examples 1-20 and Comparative Examples 1-8, respectively.
(중량%)division
(weight%)
- 글리콜 에테르 아세테이트계 화합물에서 G1은 에틸렌글리콜모노부틸에테르아세테이트, G2는 에틸렌글리콜모노에틸에테르아세테이트, G3는 프로필렌글리콜모노메틸에테르아세테이트를 각각 나타냄.
- 부식방지제에서 P1은 벤조트리아졸, P2는 솔비톨, P3는 카테콜, P4는 티오글리세롤을 각각 나타냄.In organic amine compounds, MEA represents monoethanolamine, MIPA represents monoisopropanolamine, and TMAH represents tetramethylammonium hydroxide (based on solid content, 20% aqueous solution).
G1 represents ethylene glycol monobutyl ether acetate, G2 represents ethylene glycol monoethyl ether acetate, and G3 represents propylene glycol monomethyl ether acetate.
In the corrosion inhibitors, P1 represents benzotriazole, P2 represents sorbitol, P3 represents catechol, and P4 represents thioglycerol.
시험예Test Example
땜납 기판 위에 플럭스 조성물(Indium사, SC 5R 제품)을 도포한 후 250℃에서 열처리하여 땜납을 리플로우시켰다. 이 기판에는 땜납 범프가 형성되었고 20배율 현미경을 통하여 확인한 결과 범프 상에 플럭스 잔류물이 존재하였다(도 1의 (a) 참고).The flux composition (Indium, SC 5R) was applied onto the solder substrate and heat treated at 250 ° C. to reflow the solder. Solder bumps were formed on the substrate and flux residues were present on the bumps as determined by a 20-fold microscope (see FIG. 1A).
위 실시예 1-20 및 비교예 1-8의 세정제 조성물로 위 기판을 세정하였다. 세정은 2번씩 수행되었는데, 먼저 위 기판을 위 실시예 및 비교예에 따른 세정제 조성물에 5분간 침적시킨 후, 기판을 꺼내어 스프레이 장비를 이용하여 3분간 세정액을 분무하였다. 분무 세정시 세정액의 온도는 70℃였고, 스프레이의 압력은 0.3PMa이었다.The substrate was cleaned with the cleaning composition of Examples 1-20 and Comparative Examples 1-8. The cleaning was performed twice. First, the substrate was immersed in the cleaning composition according to the above Examples and Comparative Examples for 5 minutes, and then the substrate was taken out and sprayed with the cleaning solution for 3 minutes using a spray equipment. The temperature of the cleaning liquid at the time of spray cleaning was 70 ° C., and the pressure of the spray was 0.3 PMa.
2차례의 세정 공정 후 물을 이용한 린스 공정을 수행하였다.After two washing processes, a rinse process using water was performed.
린스 공정이 끝난 땜납 기판의 SEM 사진을 찍어 그 사진을 바탕으로 (1) 범프 상의 플럭스 제거력, (2) 범프와 회로 기판이 접하는 부분의 플럭스 제거력 및 (3) 땝납의 부식성을 다음의 기준에 따라 평가하였으며, (4) 알루미늄 부식성은 Al bare 기판을 이용하여 표면저항측정기(4-point probe)로 알루미늄의 에칭속도를 측정하였고, (5) 조성물의 용해도는 조성물을 충분히 교반한 후 관찰자의 눈을 기준으로 부유물이 존재하는지 여부에 따라 평가하였다. 그 결과는 다음 표 2와 같다.
Take a SEM photograph of the solder substrate after the rinsing process and based on the photograph, (1) the flux removal force on the bumps, (2) the flux removal force on the area where the bump and the circuit board contact, and (3) the corrosion resistance of the solder according to the following criteria: (4) The aluminum corrosiveness was measured by using an Al bare substrate with a 4-point probe to measure the etching rate of aluminum. (5) The solubility of the composition was determined by stirring the composition sufficiently. The evaluation was made based on the presence or absence of suspended solids. The results are shown in Table 2 below.
(1) 범프 상의 플럭스 제거력(1) flux removal on bumps
◎: 플럭스가 완전히 제거됨◎: flux is completely removed
○: 플럭스가 우수하게 제거됨○: excellent flux removed
×: 플럭스가 잔존함
×: flux remains
(2) 범프와 회로 기판이 접하는 부분의 플럭스 제거력(2) Flux removal force at the part where bump and circuit board are in contact
◎: 플럭스가 완전히 제거됨◎: flux is completely removed
○: 플럭스가 우수하게 제거됨○: excellent flux removed
×: 플럭스가 잔존함
×: flux remains
(3) 땜납의 부식성(3) Corrosion of Solder
◎: Pit성 부식이 전혀 발생하지 않음◎: Pit corrosion does not occur at all
○: Pit성 부식이 거의 발생하지 않음○: Pit corrosion hardly occurs
×: Pit성 부식이 발생함
×: Pit corrosion occurs
(4) 알루미늄의 부식성(4) corrosiveness of aluminum
◎: 50Å/min 미만◎: less than 50 μs / min
○: 50Å/min 이상 100Å/min 이하○: 50 Hz / min or more 100 Hz / min or less
×: 100Å/min 초과
×: 100 kPa / min or more
(5) 조성물의 용해도(5) solubility of the composition
○: 부유물 미존재○: no float
×: 부유물 존재
×: suspended solids
위 표와 같이, 본 발명에 따라 유기아민 화합물, 자일렌, 글리콜 에테르계 화합물 및 부식방지제가 일정한 함량으로 포함된 실시예 1-20은 비교예 1-8에 비해 전반적으로 우수한 플럭스 제거력을 보였으며 땜납 및 알루미늄의 부식 방지성도 우수하였다. 특히, 범프와 기판이 접하는 부분에서의 플럭스 제거력은 월등하였다.As shown in the table, Example 1-20 containing a certain amount of the organic amine compound, xylene, glycol ether-based compound and the corrosion inhibitor according to the present invention showed an overall excellent flux removal ability compared to Comparative Example 1-8 The corrosion resistance of the solder and aluminum was also excellent. In particular, the flux removal force at the part where the bump and the substrate contacted was excellent.
실시예들 중에서는 유기아민 화합물로 화학식 2의 화합물인 TMAH를 사용한 예가 보다 우수하였다. 예컨대 실시예 10의 세정액으로 세정한 경우는 도 1의 (b)의 SEM 사진에서도 확인되는 바와 같이 플럭스의 제거력(범프의 표면 및 범프와 기판이 접하는 부분에 플럭스가 완전히 제거되었고, 잔사 형태로 존재하는 플럭스, 열 변성된 플럭스 및 이온 형태의 플럭스 등의 플럭스 잔류물이 전혀 존재하지 않음) 및 땜납의 부식 방지력에 있어서 매우 우수하였다. 또한, 부식방지제로 방향족 하이드록시 화합물인 카테콜을 사용한 경우 알루미늄의 부식방지성이 매우 우수하였다.Among the examples, an example using TMAH, which is a compound of Formula 2, as an organic amine compound was better. For example, in the case of cleaning with the cleaning solution of Example 10, as shown in the SEM photograph of FIG. Flux residues such as flux, heat-modified flux and ionic flux flux) and solder corrosion are very good. In addition, when catechol, an aromatic hydroxy compound, was used as a corrosion inhibitor, corrosion resistance of aluminum was very excellent.
참고로, 비교예 2의 세정액으로 세정한 경우는 도 2와 같이 범프 표면 및 그 주변에 다량의 플럭스 잔류물이 존재하고 있음이 확인된다.
For reference, in the case of washing with the cleaning liquid of Comparative Example 2, it is confirmed that a large amount of flux residue is present on the bump surface and its surroundings as shown in FIG.
Claims (10)
0.05 to 10 weight percent organic amine compound; 1 to 40% by weight of xylene; 35 to 98.85% by weight of a glycol ether acetate compound; And 0.1 to 15% by weight of a corrosion inhibitor.
[화학식 1]
(식 중, R1 및 R2는 각각 수소 원자, 아세틸기, 또는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 알칸올기이고; R3는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 알콕시기이거나, 탄소수가 2 내지 6인 직쇄 또는 분지쇄의 알켄기이며; n은 0 또는 1임),
[화학식 2]
(식 중, R4, R5, R6 및 R7은 각각 수소원자 또는 탄소수가 1 내지 6인 직쇄 또는 분지쇄의 알킬기 또는 탄소수가 2 내지 6인 직쇄 또는 분지쇄의 알켄기임).
The cleaning composition of claim 1, wherein the organic amine compound is a compound of Formula 1, a compound of Formula 2, or a mixture thereof:
[Formula 1]
(Wherein R 1 and R 2 are each a hydrogen atom, an acetyl group, or a straight or branched chain alkyl or alkanol group having 1 to 6 carbon atoms; R 3 is a straight or branched chain alkyl group having 1 to 6 carbon atoms) Or an alkoxy group or a straight or branched chain alkene group having 2 to 6 carbon atoms; n is 0 or 1),
(2)
(Wherein R 4 , R 5 , R 6 and R 7 each represent a hydrogen atom or a straight or branched chain alkyl group having 1 to 6 carbon atoms or a straight or branched chain alken group having 2 to 6 carbon atoms).
The cleaning composition for solder flux removal according to claim 2, wherein R 3 is a linear or branched alkyl group having 1 to 6 carbon atoms.
The compound of claim 3, wherein the compound of formula 1 is mono-, di- or tri-ethanolamine; Mono-, di- or tri-propanolamine; Mono-, di- or tri-isopropanolamine; Butanolamine; Butyl monoethanolamine; Ethyl diethanolamine; N-methylaminoethanol; N-acetylethanolamine; Hydroxylamine; Cleaner composition for solder flux removal of at least one member selected from the group consisting of tert-methylhydroxylamine and tert-butylhydroxylamine.
The cleaning composition for solder flux removal according to claim 2, wherein R 4 , R 5 , R 6 and R 7 are each a linear alkyl group having 1 to 6 carbon atoms.
The compound of claim 5, wherein the compound of formula 2 is selected from the group consisting of tetramethylammonium hydroxide; Tetraethylmethylammonium hydroxide; Tetrapropylammonium hydroxide; And tetrabutylammonium hydroxide. The cleaning composition for solder flux removal of at least one member selected from the group consisting of tetrabutylammonium hydroxide.
The method according to claim 1, 2 to 10% by weight of the organic amine compound; 1 to 15% by weight of xylene; 65 to 96.5 weight% of a ketone compound; And 0.5 to 10% by weight of a corrosion inhibitor.
The solder according to claim 1, wherein the glycol ether acetate compound is at least one member selected from the group consisting of ethyl glycol monobutyl ether acetate, diethylene glycol monobutyl ether acetate, ethylene glycol monoethyl ether acetate, and propylene glycol monomethyl ether acetate. Flux cleaning agent composition.
The cleaning composition for solder flux removal according to claim 1, wherein the corrosion inhibitor is at least one selected from the group consisting of an azole group-containing organic compound, an aromatic hydroxy compound, a sugar alcohol compound, and a mercapto group-containing sulfur compound.
The method of claim 9, wherein the corrosion inhibitor is benzotriazole, tolytriazole, 4-methylimidazole, 5-hydroxymethyl-4-methylimidazole, 3-aminodiazole, catechol, resorcinol, Quinoline, sorbitol, mannitol, threazole, xylitol, dithiodiglycerol, bis (2,3-dihydroxypropylthio) ethylene, 2-mercaptoethanol, 3-mercapto-1-propanol, thioglycerol, thioglycol Cleaning composition for solder flux removal of at least one selected from the group consisting of acid, thioacetic acid and thiosalicylic acid.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100057176A KR20110137132A (en) | 2010-06-16 | 2010-06-16 | Cleaning agent composition for removing solder flux |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100057176A KR20110137132A (en) | 2010-06-16 | 2010-06-16 | Cleaning agent composition for removing solder flux |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20110137132A true KR20110137132A (en) | 2011-12-22 |
Family
ID=45503543
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020100057176A KR20110137132A (en) | 2010-06-16 | 2010-06-16 | Cleaning agent composition for removing solder flux |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR20110137132A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105087182A (en) * | 2014-05-12 | 2015-11-25 | 花王株式会社 | Circuit substrate cured with solder, a manufacturing method of circuit substrate equipped with electronic part, and cleaning agent composition for fluxing agent |
-
2010
- 2010-06-16 KR KR1020100057176A patent/KR20110137132A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105087182A (en) * | 2014-05-12 | 2015-11-25 | 花王株式会社 | Circuit substrate cured with solder, a manufacturing method of circuit substrate equipped with electronic part, and cleaning agent composition for fluxing agent |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR102323027B1 (en) | Method for manufacturing soldered circuit board, method for manufacturing circuit board having electronic component mounted thereon, and cleaning agent composition for flux | |
JP3787857B2 (en) | Circuit board soldering flux and circuit board | |
CN1302327A (en) | Acidic composition containing fluoride for removal of photoresists and etch residues | |
WO2007119392A1 (en) | Cleaner composition for removal of lead-free soldering flux, rinsing agent for removal of lead-free soldering flux, and method for removal of lead-free soldering flux | |
KR20090045859A (en) | Stripping agent for polyimide | |
JP7370339B2 (en) | Cleaning flux residue | |
KR20110137130A (en) | Cleaning agent composition for removing solder flux | |
JP7385597B2 (en) | Cleaning composition for removing flux residue | |
WO2018037579A1 (en) | Cleaning composition and cleaning method | |
KR20110137132A (en) | Cleaning agent composition for removing solder flux | |
KR101796112B1 (en) | Cleaning composition for soldering flux residues | |
KR20110137131A (en) | Cleaning agent composition for removing solder flux | |
KR20110124981A (en) | Cleaning agent composition for removing solder flux | |
KR20110124980A (en) | Cleaning agent composition for removing solder flux | |
KR20110124983A (en) | Cleaning agent composition for removing solder flux | |
KR20110136388A (en) | Cleaning agent composition for removing solder flux | |
KR20110124982A (en) | Cleaning agent composition for removing solder flux | |
JP7512238B2 (en) | Flux cleaning composition | |
JP6345512B2 (en) | Detergent composition for removing solder flux residue | |
RU2445353C1 (en) | Liquid cleaning composition | |
JP2022104315A (en) | Detergent composition for flux | |
JP6231250B1 (en) | Cleaning composition and cleaning method | |
KR20110015063A (en) | Cleaner composition for removal of lead-free soldering flux | |
KR20130071985A (en) | Cleaner composition for removal of soldering flux | |
KR20110023482A (en) | Cleaner composition for removal of lead-free soldering flux |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |