KR20110101555A - Nitride semiconductor light emitting device and method of manufacturing the same - Google Patents

Nitride semiconductor light emitting device and method of manufacturing the same Download PDF

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KR20110101555A
KR20110101555A KR1020100020624A KR20100020624A KR20110101555A KR 20110101555 A KR20110101555 A KR 20110101555A KR 1020100020624 A KR1020100020624 A KR 1020100020624A KR 20100020624 A KR20100020624 A KR 20100020624A KR 20110101555 A KR20110101555 A KR 20110101555A
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nitride semiconductor
grooves
groove
active layer
layer
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KR1020100020624A
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Korean (ko)
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박성은
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삼성엘이디 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

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Abstract

The present invention relates to a nitride semiconductor light emitting device and a method of manufacturing the same, n-type electrode; An n-type nitride semiconductor layer formed on a lower surface of the n-type electrode, and having first and second grooves and third and third grooves having different sizes below and spaced apart from each other on a horizontal line; A first insulating film formed on a bottom surface of the n-type nitride semiconductor layer to expose the first, second and third grooves; An active layer having a red active layer, a green active layer and a blue active layer respectively formed in the first, second and third grooves; A p-type nitride semiconductor layer formed on the lower surface of the active layer and the first insulating film; A p-type electrode formed on the lower surface of the p-type nitride semiconductor layer; And a structure support layer formed on the lower surface of the p-type electrode. The present invention also provides a method of manufacturing the nitride semiconductor light emitting device.

Description

Nitride semiconductor light emitting device and method of manufacturing the same

The present invention relates to a nitride semiconductor light emitting device and a method of manufacturing the same, and more particularly, a nitride semiconductor light emitting device having red, green, and blue active layers spaced apart from each other on a horizontal line in an n-type nitride semiconductor layer and its manufacture It is about a method.

Recently, III-V nitride semiconductors such as GaN have been spotlighted as core materials of light emitting devices such as light emitting diodes (LEDs) or laser diodes (LDs) due to their excellent physical and chemical properties. have. BACKGROUND ART Light emitting devices using III-V nitride semiconductor materials are widely used in light emitting devices for obtaining light in a blue or green wavelength band, and these light emitting devices are used as light sources of various products such as home appliances, electronic displays, and lighting devices.

The nitride semiconductor light emitting device includes an active layer disposed between n-type and p-type nitride semiconductor layers, and generates and emits light on the principle that electrons and holes recombine in the active layer.

Recently, a technique of inducing white light emission by applying a yellow phosphor on a blue light emitting chip for various applications of nitride semiconductor light emitting devices has been widely used.

However, in the case of inducing white light emission using the phosphor as described above, the light generated in the active layer hits the phosphor, resulting in a loss of light, thereby reducing the light efficiency.

Accordingly, the present invention has been made to solve the above problems, and an object of the present invention is to allow the red, green, and blue active layers to be spaced apart from each other on a horizontal line in the n-type nitride semiconductor layer, thereby avoiding the use of phosphors. The present invention provides a nitride semiconductor light emitting device capable of obtaining light emission and improving light efficiency and a method of manufacturing the same.

A nitride semiconductor light emitting device according to an embodiment of the present invention for achieving the above object, an n-type electrode; An n-type nitride semiconductor layer formed on a lower surface of the n-type electrode, and having first and second grooves and third and third grooves having different sizes below and spaced apart from each other on a horizontal line; A first insulating film formed on a bottom surface of the n-type nitride semiconductor layer to expose the first, second and third grooves; An active layer having a red active layer, a green active layer and a blue active layer respectively formed in the first, second and third grooves; A p-type nitride semiconductor layer formed on the lower surface of the active layer and the first insulating film; A p-type electrode formed on the lower surface of the p-type nitride semiconductor layer; And a structure support layer formed on the lower surface of the p-type electrode.

Here, the first, second and third grooves may have the same depth and different widths.

In addition, the first groove may have a larger width than the second groove, and the second groove may have a larger width than the third groove.

In addition, the first, second and third grooves may have a depth and width of 100 nm or less.

The display device may further include a reflective film formed between the active layer and inner surfaces of the first, second and third grooves.

In addition, the reflective film may be made of metal.

In addition, the metal may include at least one of Ag, Al, and Ni.

The semiconductor device may further include a side insulating film formed to cover the surface of the reflective film to electrically insulate the reflective film from the n-type nitride semiconductor layer, the active layer, and the p-type nitride semiconductor layer.

In addition, a method of manufacturing a nitride semiconductor light emitting device according to an embodiment of the present invention for achieving the above object comprises the steps of sequentially forming an n-type nitride semiconductor layer and a first insulating film on a substrate; Etching portions of the first insulating layer and the n-type nitride semiconductor layer to form first grooves, second grooves, and third grooves having different sizes in the n-type nitride semiconductor layer, respectively; Forming an active layer by forming a red active layer, a green active layer, and a blue active layer in the first groove, the second groove, and the third groove, respectively; Sequentially forming a p-type nitride semiconductor layer, a p-type electrode, and a structure support layer on the n-type nitride semiconductor layer including the active layer; Removing the substrate; And forming an n-type electrode on the n-type nitride semiconductor layer.

Here, the first, second and third grooves may be formed to have the same depth and different widths.

In addition, the first groove may have a larger width than the second groove, and the second groove may be formed to have a larger width than the third groove.

In addition, the first, second and third grooves may be formed to have a depth and width of 100 nm or less.

In addition, between forming the first groove, the second groove and the third groove, respectively, and forming the active layer, forming a reflective film on the inner wall of the first groove, the second groove and the third groove Steps may further include.

In addition, between the forming of the first, second and third grooves and the forming of the reflective film, a second insulating film is formed along the inner walls and the bottom surfaces of the first, second and third grooves. Forming a third insulating film along the surface of the reflective film between the forming of the reflective film and the forming of the active layer; And etching the portion of the second insulating layer formed on the bottom surfaces of the first groove, the second groove, and the third groove to expose the n-type nitride semiconductor layer.

As described above, according to the nitride semiconductor light emitting device and the method of manufacturing the same according to the present invention, red, green, and blue active layers emitting red, green, and blue light, respectively, inside the n-type nitride semiconductor layer are fixed to each other on the horizontal line. By allowing them to be spaced apart from each other, white light can be obtained in a single light emitting device by the combination of red, green, and blue light.

Therefore, the present invention does not need to use a separate phosphor for white light emission, thereby eliminating the loss of light by the phosphor, thereby improving the light efficiency of the light emitting device.

In addition, the present invention allows the red, green and blue active layers to be disposed in a straight line in the horizontal direction, and forms a reflective film and a side insulating film surrounding the surface of the reflective film on sidewalls of the respective active layers, thereby independently biasing each active layer. At the same time, light generated in each active layer may be reflected by the reflective film to be effectively extracted to the outside.

Accordingly, the present invention prevents light generated in each active layer from being reabsorbed by neighboring active layers, thereby minimizing the overall light loss.

1 is a cross-sectional view showing the structure of a nitride semiconductor light emitting device according to an embodiment of the present invention.
2 to 11 are cross-sectional views sequentially showing a method of manufacturing a nitride semiconductor light emitting device according to an embodiment of the present invention.

The matters relating to the operational effects including the technical constitution for the above object of the nitride semiconductor light emitting device and the manufacturing method according to the present invention will be clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention.

Structure of nitride semiconductor light emitting device Example

A nitride semiconductor light emitting device according to an embodiment of the present invention will be described in detail with reference to FIG. 1.

1 is a cross-sectional view showing the structure of a nitride semiconductor light emitting device according to an embodiment of the present invention.

As shown in FIG. 1, an n-type electrode 170 is formed on the top of the nitride semiconductor light emitting device according to the exemplary embodiment of the present invention. The n-type electrode 170 may be formed of a stacked film of Cr and Au.

An n-type nitride semiconductor layer 110 is formed on the bottom surface of the n-type electrode 170.

The n-type nitride semiconductor layer 120 is composed of an Al x In y Ga (1-xy) N composition formula doped with n-type impurities, where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦. 1). Si, Ge, Sn, or the like can be used as the n-type impurity.

Here, the first groove 110a, the second groove 110b, and the third groove 110c having different sizes are formed spaced apart from each other on the horizontal line under the n-type nitride semiconductor layer 120. .

The first groove 110a, the second groove 110b, and the third groove 110c are formed by etching portions of the lower portion of the n-type nitride semiconductor layer 120, and have the same depth and different widths. (See reference numerals “D 1 ”, “D 2 ”, “D 3 ” in FIG. 3 ).

For example, the width of the first groove (110a) (D 1) is the second width of the second groove (110b) (D 2) greater than the width of the second groove (D 2) is a width of the third groove ( D 3 ) can be formed larger than (D 1 〉 D 2 〉 D 3 ).

Although not illustrated in the drawings, the first, second and third grooves 110a, 110b, and 110c may have a circular shape, an elliptical shape, or a square shape. It may be. In addition, the planar shape of the first, second and third grooves 110a, 110b, 110c is not limited to the above-described form, and within the technical spirit of the present invention, for example, an equilateral triangle, a positive It can be variously modified, including regular polygons such as pentagons and regular hexagons, asymmetric polygons, and combinations of the circular, elliptical, regular polygons, and asymmetric polygons.

The first, second and third grooves 110a, 110b and 110c may be formed on the bottom surface of the n-type nitride semiconductor layer 110 having the first, second and third grooves 110a, 110b and 110c formed therein. The first insulating film 120a to be exposed is formed.

An active layer 140 is formed in the first, second and third grooves 110a, 110b, and 110c exposed to the first insulating layer 120a.

The active layer 140 may include a red active layer 140a formed in the first groove 110a, a green active layer 140b formed in the second groove 110b, and the third groove 110c. It may include a blue active layer 140c formed inside.

As such, the first grooves 110a, the second grooves 110b, and the third grooves 110c each having the red active layer 140a, the green active layer 140b, and the blue active layer 140c formed therein are 100 nm or less. It can be formed to have a depth and width of. It is possible to control the wavelength of each of the active layers 140a, 140b and 140c by the quantum size effect only when the width of the first, second and third grooves 110a, 110b and 110c is 100 nm or less. Because it can be done.

That is, in the embodiment of the present invention, the first, second and third grooves (110a, 110b, 110c) are to have a depth and width of 100 nm or less, each formed by having a different size width, The wavelength of light emitted from each of the active layers 140a, 140b and 140c formed in the grooves 110a, 110b and 110c may be adjusted.

The red, green, and blue active layers 140a, 140b, and 140c have Al x In y Ga (1-xy) N composition formulas, where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦ 1. And a wavelength of light emitted from each of the active layers 140a, 140b, and 140c, and the width of the grooves 110a, 110b, and 110c in which the active layers 140a, 140b, and 140c are formed. It is adjustable by.

In this case, the smaller the width of the groove, the more active layer formed therein has a shorter wavelength, so that the first groove having the largest width D 1 among the first, second, and third grooves 110a, 110b, 110c ( A red active layer 140a emitting red light is formed inside the 110a, and a green active layer emitting green light inside the second groove 110b having a width D 2 smaller than the first groove 110b. 140b) may be formed, and a blue active layer 140c emitting blue light may be formed in the third groove 110c having a width D 3 smaller than that of the second groove 110b.

In the nitride semiconductor light emitting device according to the embodiment of the present invention, the red, green, and blue active layers 140a, 140b, and 140c are formed to be spaced apart from each other in a straight line in the horizontal direction in the n-type nitride semiconductor layer 110. In addition, red, green, and blue light emission are induced from the active layers 140a, 140b, and 140c, and the combination of these three primary colors makes it possible to emit white light in a single light emitting device.

Therefore, according to the embodiment of the present invention, since white light can be obtained without the use of phosphors, the light efficiency of the light emitting device can be improved by eliminating the loss of light caused by the existing phosphors.

Meanwhile, in the exemplary embodiment of the present invention, the red, green, and blue active layers 140a, 140b, and 140c are each shown and described as being formed one by one, but only one of them is shown for convenience of description, and the active layers 140a, 140b, The number of 140c) is not limited to this.

In the nitride semiconductor light emitting device according to the embodiment of the present invention, a reflective film 130 is further disposed between the active layer 140 and the inner surfaces of the first, second and third grooves 110a, 110b, and 110c. Formed.

The reflective film 130 may include at least one of a metal material having excellent reflectivity, such as Ag, Al, and Ni.

In this case, the n-type nitride semiconductor layer 110, the active layer 140, and the following may be formed by the side insulating film 121 formed to cover the surface of the reflective film 130 made of a metal material as described above. May be electrically insulated from the p-type nitride semiconductor layer 150. That is, the side insulating layer 121 may prevent the reflective layer 130 from electrically affecting the n-type and p-type nitride semiconductor layers 110 and 150 and the active layer 140 disposed at the periphery.

Here, the side insulating film 121 formed to surround the surface of the reflective film 130 may be disposed between the inner walls of the first, second and third grooves 110a, 110b and 110c and the reflective film 130. The second insulating layer 120b may be formed, and the third insulating layer 120c may be formed between the reflective layer 130 and the active layer 140.

That is, each of the active layers 140a, 140b, and 140c is formed at the center of the first, second, and third grooves 110a, 110b, and 110c except for a portion of an edge of the inside of the first, second, and third grooves 110a, 110b, and 110c. The second insulating film 120b is formed along the inner wall and the edge bottom surface of the third grooves 110a, 110b, and 110c, and the reflective film 130 is formed on the surface of the second insulating film 120b. A third insulating layer 120c is formed along the surface of the reflective film 130.

As described above, the nitride semiconductor light emitting device according to the embodiment of the present invention includes a reflective film 130 and a side insulating film 121 covering the red, green, and blue active layers 140a, 140b, and 140c formed on the horizontal line to be spaced apart from each other. In this case, a bias is applied to each of the active layers 140a, 140b, and 140c independently, and at the same time, light generated in each of the active layers 140a, 140b, and 140c is reflected by the reflective film 130 and externally. Can be effectively extracted.

Therefore, according to the exemplary embodiment of the present invention, the light is reabsorbed to neighboring active layers 140a, 140b, and 140c, thereby preventing the light from being lost and improving the overall light efficiency.

The p-type nitride semiconductor layer 150 is formed on the bottom surface of the active layer 140 and the first insulating layer 120a formed in the first, second and third grooves 110a, 110b and 110c.

The p-type nitride semiconductor layer 150 has an Al x In y Ga (1-xy) N composition formula doped with p-type impurities, where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦. 1). As the p-type impurity, Mg, Zn, Be or the like can be used.

The p-type electrode 160 is formed on the bottom surface of the p-type nitride semiconductor layer 150.

The p-type electrode 160 may be made of a metal having high reflectance to simultaneously serve as an electrode and a reflective role.

The structural support layer 200 is bonded to the bottom surface of the p-type electrode 160 by a conductive bonding layer (not shown). The structural support layer 200 may be formed of a Si substrate, a Ge substrate, a SiC substrate, a GaAs substrate, or a metal layer in consideration of thermal stability of the device.

As described above, in the nitride semiconductor light emitting device according to the embodiment of the present invention, a portion of the n-type nitride semiconductor layer 110 is etched to obtain a quantum size effect, such as a depth of 100 nm or less. And first and second grooves 110a, 110b, and 110c having widths and having different widths D 1 , D 2 , and D 3 , respectively, and inside the grooves 110a, 110b, and 110c. By forming the active layers 140 in the grooves, the active layers 140a, 140b, and 140c formed in the grooves 110a, 110b, and 110c may emit light of different wavelength bands.

Accordingly, in the exemplary embodiment of the present invention, the red, green, and blue active layers 140a, 140b, and 140c emitting red, green, and blue colors may be formed inside the single light emitting device, thereby obtaining white light without using phosphors. It can be effective.

In addition, each of the active layers 140a, 140b, and 140c are spaced apart from each other on a horizontal line, and a reflective film 130 is further provided on the outer surface of each of the active layers 140a, 140b, and 140c, and thus generated in each active layer. The absorbed light can be prevented from being absorbed by the neighboring active layer and lost, and the light extraction efficiency can be maximized.

A method for manufacturing a nitride semiconductor light emitting device Example

Hereinafter, a method of manufacturing a nitride semiconductor light emitting device according to an embodiment of the present invention will be described in detail with reference to FIGS. 2 to 11.

2 to 11 are cross-sectional views sequentially showing the method of manufacturing the nitride semiconductor light emitting device according to the embodiment of the present invention.

First, as shown in FIG. 2, the n-type nitride semiconductor layer 110 is formed on the substrate 100.

The substrate 100 is a substrate suitable for growing a nitride semiconductor single crystal, and may be made of sapphire, ZnO, GaN, SiC, or AlN.

The n-type nitride semiconductor layer 110 may have an Al x In y Ga (1-xy) N composition formula doped with n-type impurities, where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦. 1), and may be formed through a known nitride deposition process such as a metal organic chemical vapor deposition (MOCVD) or a molecular beam epitaxy (MBE) process.

Next, a first insulating film 120a is formed on the n-type nitride semiconductor layer 110. The first insulating layer 120a may be made of SiO 2, SiN, or the like.

Next, as shown in FIG. 3, portions of the first insulating layer 120a and the n-type nitride semiconductor layer 110 are sequentially etched so that the inside of the n-type nitride semiconductor layer 110 is different from each other. The first groove 110a, the second groove 110b, and the third groove 110c each having a size are formed.

That is, a photoresist pattern (not shown) exposing a portion corresponding to a region where the first grooves 110a, the second grooves 110b, and the third grooves 110c are to be formed on the first insulating layer 120a. Next, a portion of the first insulating layer 120a is etched using the photoresist pattern as an etching mask. Subsequently, after the photoresist layer pattern is removed, a portion of the n-type nitride semiconductor layer 110 exposed to the first insulating layer 120a is etched using the first insulating layer 120a as an etching mask. The second and third grooves 110a, 110b, and 110c are formed, respectively.

In this case, the first groove 110a, the second groove 110b and the third groove 110c may be formed to be spaced apart from each other by a predetermined distance, and have the same depth and different widths D 1 and D 2. , D 3 ).

For example, the width of the first groove (110a) (D 1) is the second width of the second groove (110b) (D 2) greater than the width of the second groove (D 2) is a width of the third groove ( D 3 ) can be formed larger than (D 1 〉 D 2 〉 D 3 ).

In addition, the first, second and third grooves 110a, 110b, and 110c may be formed to have a depth and width of 100 nm or less.

Next, as shown in FIG. 4, the second insulating layer 120b along the inner surfaces of the first grooves 110a, the second grooves 110b, and the third grooves 110c, that is, the inner wall and the bottom surface thereof. ). The second insulating layer 110b may be formed of SiO 2 or the like.

Next, as shown in FIG. 5, the reflective film 130 is formed on the second insulating film 120b formed on the inner walls of the first groove 110a, the second groove 110b, and the third groove 110c. To form.

The reflective film 130 may include at least one of a metal material having excellent reflectivity, such as Ag, Al, and Ni, and may be formed by a deposition method or a sputtering process.

Then, as shown in FIG. 6, a third insulating film 120c is formed along the surface of the reflective film 130. The third insulating layer 120c may be made of SiO 2 or the like as the second insulating layer 110b.

The reflective film 130 may be electrically insulated by covering the entire surface of the reflective film 130 by the side insulating film 121 formed of the second insulating film 120b and the third insulating film 120c.

Next, as shown in FIG. 7, portions of the second insulating layer 120b formed on the bottom surfaces of the first grooves 110a, the second grooves 110b, and the third grooves 110c are etched. The n-type nitride semiconductor layer 110 is exposed.

Thereafter, as shown in FIG. 8, the red active layer 140a, the green active layer 140b, and the blue active layer (inside the first groove 110a, the second groove 110b, and the third groove 110c). 140c) is formed to form the active layer 140, respectively.

The red, green, and blue active layers 140a, 140b, and 140c are layers in which light is generated by recombination of electrons and holes, and are nitride semiconductor materials having a single quantum well structure or a multiple quantum well structure, such as Al x In y Ga. And (1-xy) N composition formula, where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦ 1.

The wavelength of light emitted from each of the active layers 140a, 140b, and 140c may vary depending on the widths of the grooves 110a, 110b, and 110c in which the active layers 140a, 140b, and 140c are formed.

In other words, the smaller the width of the grooves 110a, 110b, and 110c, the shorter the active layer formed inside the grooves due to the quantum size effect, the first, second and third grooves (110a, 110b, 110c) Among the first grooves 110a having the largest width D 1 , a red active layer 140a that emits red light in the wavelength range of about 570 to 650 nm is formed and has a width smaller than that of the first grooves 110b ( Inside the second groove 110b having the D 2 ), a green active layer 140b is formed, which is shorter than the above-mentioned red light wavelength band and emits green light in the wavelength range of about 500 to 550 nm, and is larger than the second groove 110b. Inside the third groove 110c having a small width D 3 , a blue active layer 140c may be formed that emits blue light in a wavelength range of about 430 nm to 480 nm as a wavelength shorter than that of the green light wavelength band.

According to the embodiment of the present invention, the red, green and blue active layers 140a, 140b and 140c emitting red, green and blue light are formed in the n-type nitride semiconductor layer 110 so as to be spaced apart from each other on the horizontal line. By combining the three primary colors of light emitted from the active layers 140a, 140b, and 140c, the white light can be obtained inside a single light emitting device.

That is, according to the embodiment of the present invention, since white light can be obtained without using a phosphor, the light efficiency of the light emitting device can be improved by eliminating the loss of light caused by the existing phosphor.

In addition, according to the embodiment of the present invention, the reflective film 130 covered with the side insulating film 121 between the active layer 140 and the inner surface of the first, second and third grooves 110a, 110b, 110c. ) Is formed so that each active layer 140a, 140b, 140c is biased independently, and light generated in each of the active layers 140a, 140b, 140c is reflected by the reflective film 130 to the outside. It can be extracted effectively.

Therefore, according to the exemplary embodiment of the present invention, the light may be prevented from being reabsorbed by the neighboring active layers 140a, 140b, and 140c to be lost, thereby improving the overall light efficiency.

Next, as shown in FIG. 9, the p-type nitride semiconductor layer 150 is formed on the n-type nitride semiconductor layer 110 including the active layer 140.

The p-type nitride semiconductor layer 150 has an Al x In y Ga (1-xy) N composition formula doped with p-type impurities, where 0 ≦ x ≦ 1, 0 ≦ y ≦ 1, and 0 ≦ x + y ≦. 1) and may be formed through a MOCVD or MBE process.

Next, the p-type electrode 160 and the structure support layer 200 are sequentially formed on the p-type nitride semiconductor layer 150.

Thereafter, as shown in FIG. 10, the substrate 100 is removed from the n-type nitride semiconductor layer 110 by a laser lift off (LLO) process, and the n-type nitride semiconductor layer 110 is removed. ) Surface.

Next, as shown in FIG. 11, an n-type electrode 170 is formed on the exposed n-type nitride semiconductor layer 110.

Preferred embodiments of the present invention described above are disclosed for the purpose of illustration, and various substitutions, modifications, and changes within the scope without departing from the spirit of the present invention for those skilled in the art to which the present invention pertains. It will be possible, but such substitutions, changes and the like should be regarded as belonging to the following claims.

100: substrate
200: structural support layer
110: n-type nitride semiconductor layer
110a, 110b, 110c: first groove, second groove, third groove
D 1 , D 2 , D 3 : width of the first groove, width of the second groove, width of the third groove
120a, 120b, and 120c: first insulating film, second insulating film, and third insulating film
121: side insulating film
130: reflecting film
140a, 140b, 140c: red active layer, green active layer, blue active layer
140: active layer
150: p-type nitride semiconductor layer
160: p-type electrode
170: n-type electrode

Claims (14)

n-type electrode;
An n-type nitride semiconductor layer formed on a lower surface of the n-type electrode, and having first and second grooves and third and third grooves having different sizes below and spaced apart from each other on a horizontal line;
A first insulating film formed on a bottom surface of the n-type nitride semiconductor layer to expose the first, second and third grooves;
An active layer having a red active layer, a green active layer and a blue active layer respectively formed in the first, second and third grooves;
A p-type nitride semiconductor layer formed on the lower surface of the active layer and the first insulating film;
A p-type electrode formed on the lower surface of the p-type nitride semiconductor layer; And
A structural support layer formed on the bottom surface of the p-type electrode;
Nitride semiconductor light emitting device comprising a.
The method of claim 1,
And the first, second and third grooves have the same depth and different widths.
The method of claim 2,
The first groove has a larger width than the second groove, the second groove has a width larger than the third groove.
The method of claim 1,
And the first, second and third grooves have a depth and width of 100 nm or less.
The method of claim 1,
And a reflective film formed between the active layer and inner surfaces of the first, second and third grooves.
The method of claim 5,
The reflecting film is a nitride semiconductor light emitting device, characterized in that made of metal.
The method of claim 6,
The metal is a nitride semiconductor light emitting device, characterized in that containing at least one of Ag, Al and Ni.
The method of claim 6,
And a side insulating film formed to cover the surface of the reflective film to electrically insulate the reflective film from the n-type nitride semiconductor layer, the active layer and the p-type nitride semiconductor layer. .
Sequentially forming an n-type nitride semiconductor layer and a first insulating film on the substrate;
Etching portions of the first insulating layer and the n-type nitride semiconductor layer to form first grooves, second grooves, and third grooves having different sizes in the n-type nitride semiconductor layer, respectively;
Forming an active layer by forming a red active layer, a green active layer, and a blue active layer in the first groove, the second groove, and the third groove, respectively;
Sequentially forming a p-type nitride semiconductor layer, a p-type electrode, and a structure support layer on the n-type nitride semiconductor layer including the active layer;
Removing the substrate; And
Forming an n-type electrode on the n-type nitride semiconductor layer;
Method of manufacturing a nitride semiconductor light emitting device comprising a.
10. The method of claim 9,
The first, the second and the third groove is a method of manufacturing a nitride semiconductor light emitting device, characterized in that formed to have the same depth and different widths.
The method of claim 10,
The first groove has a width larger than the second groove, the second groove is formed to have a width larger than the third groove manufacturing method of the nitride semiconductor light emitting device.
10. The method of claim 9,
And the first, second and third grooves are formed to have a depth and a width of 100 nm or less.
10. The method of claim 9,
Between forming the first groove, the second groove and the third groove, respectively, and forming the active layer,
And forming a reflective film on inner walls of the first, second and third grooves.
The method of claim 13,
Between the forming of the first, second and third grooves and the forming of the reflective film, forming a second insulating film along the inner wall and the bottom surface of the first, second and third grooves It further comprises;
Forming a third insulating film along the surface of the reflective film between the forming of the reflective film and the forming of the active layer; And etching the portion of the second insulating layer formed on the bottom surfaces of the first grooves, the second grooves, and the third grooves to expose the n-type nitride semiconductor layer. Manufacturing method.
KR1020100020624A 2010-03-09 2010-03-09 Nitride semiconductor light emitting device and method of manufacturing the same KR20110101555A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020058180A1 (en) * 2018-09-17 2020-03-26 Osram Oled Gmbh Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020058180A1 (en) * 2018-09-17 2020-03-26 Osram Oled Gmbh Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip

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