KR20110088688A - Silicon Single Crystal Ingot Forming Device - Google Patents

Silicon Single Crystal Ingot Forming Device Download PDF

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Publication number
KR20110088688A
KR20110088688A KR1020100008309A KR20100008309A KR20110088688A KR 20110088688 A KR20110088688 A KR 20110088688A KR 1020100008309 A KR1020100008309 A KR 1020100008309A KR 20100008309 A KR20100008309 A KR 20100008309A KR 20110088688 A KR20110088688 A KR 20110088688A
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KR
South Korea
Prior art keywords
adapter
seed
single crystal
crystal ingot
silicon single
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KR1020100008309A
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Korean (ko)
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KR101203969B1 (en
Inventor
전동구
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(주)코원에프아이에스
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Priority to KR1020100008309A priority Critical patent/KR101203969B1/en
Publication of KR20110088688A publication Critical patent/KR20110088688A/en
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/32—Seed holders, e.g. chucks
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

PURPOSE: A silicon monocrystal ingot forming apparatus is provided to symmetrically make adapter storage grooves by facing each other in order to insert and fix the adapter, thereby enabling to easily perform desorption of a wire adapter without damage of a seed connection chuck. CONSTITUTION: An adapter(130) of cylindrical shape includes an insertion hole where a wire penetrates and a stepped cone in which the lower outer circumference is larger than the upper outer circumference. A housing main body(110) has a pole shape with round upper end part. The upper part of housing main body includes inlet space penetrated from both sides in order to be passed by an adapter. A cut part(113) which is orthogonally extended from the inlet space separates each inner surface of the upper part with a fixed interval. Each adapter storage groove is symmetrically formed corresponding to the upper circumference of adapter at the center of inner side surface of the upper part. The upper end part of a seed chuck is combined as desorption with the lower side of the housing main body. A silicon monocrystal ingot growing from a seed crystal to a lower part is installed.

Description

Silicon Single Crystal Ingot Forming Device {.}

The present invention relates to a silicon single crystal ingot forming apparatus, and more particularly, the upper end is spaced a predetermined distance by the inlet space and the incision of the adapter at the lower end of the wire that is rotated, lifted, and lowered by the wire pulling unit. The present invention relates to a silicon single crystal ingot forming apparatus having a housing body having symmetrically formed adapter receiving grooves on each side thereof, so that the seed connecting chuck and the wire adapter can be easily detached during internal maintenance work or wire replacement of the single crystal ingot forming apparatus.

In general, a silicon wafer used in semiconductor manufacturing is a polysilicon placed in a heating furnace (quartz crucible) of a single crystal growth apparatus, followed by fusion heating to form a silicon single crystal ingot in the form of a round rod, which is then plated. It is made by cutting.

This silicon-crystal single crystal ingot is grown by the cz (Chocoralsk) method or the fz (plot zone) method, and about 80% of the silicon substrate is used by the cz method. The cz method is a technique of attaching seed crystals to the shaft of a silicon listing device and pulling a melt (silicon polycrystal) into a quartz crucible.

As such, the silicon single crystal ingot is mounted on the seed connecting chuck at the end of the wire connected to the motor, and is processed while being rotated in a quartz crucible.

Referring to FIG. 1, a typical silicon single crystal ingot forming apparatus includes a quartz crucible 3 in which a silicon solution S is stored, a heater 4 surrounding the quartz crucible 3 so that the quartz crucible 3 is heated, and a heater. Reaction chamber (1) having a heat shield (5) formed in a hollow shape to surround (4) and a crucible (3), a heater (4) and a heat shield (5) are provided therein and through holes formed in the bottom surface thereof. ) And a wire (W) to which a seed crystal (Seed) is connected.

In order to manufacture the silicon single crystal ingot (I) using the above-described ingot forming apparatus, first, ultra high purity polycrystalline silicon and boron are charged into a quartz crucible 3 and then heated by a heater 4. To melt.

The heater 4 melts a high-purity polycrystalline silicon mass loaded in the crucible 3 into a silicon solution S, and the heat shield 5 surrounding the heater 4 is heat dissipated from the heater 4. It is prevented from diffusing to the outer wall side of the reaction chamber 1 to improve the thermal efficiency.

Subsequently, after soaking the seed crystals connected by the seed connecting chuck 6 provided at the lower end of the wire W in the dissolved silicon solution S, the silicon single crystal ingot I is grown by slowly pulling it while rotating.

A wire pulling unit (not shown) is formed on the upper portion of the reaction chamber 1 to wind and pull the wire W. The silicon solution in the quartz crucible 3 is disposed at the lower end of the wire W. The seed connecting chuck 6 is provided to connect the seed crystals grown to the single crystal ingot I while being brought into contact with (S).

The wire pulling unit winds up the wire W and grows at the same time as the single crystal ingot I grows.

The crucible 3 is fixedly installed on the shaft shaft 2, and the shaft shaft 2 is rotated and raised by a chamber lifting unit (not shown) provided at a lower portion of the reaction chamber 1.

At this time, the seed crystal connected to the seed connecting chuck (6) is rotated in the opposite direction to the rotation direction of the crucible (3) about the same axis as the shaft axis (2) of the quartz crucible (3), the silicon solution ( The solid-liquid interface of S) and the seed crystal is grown to single crystal ingot (I) while being raised to maintain the same height.

Referring to FIG. 2, the seed connecting chuck 6 provided in the conventional ingot forming apparatus includes a housing body 61 in which a lower end of the wire W is detachably fixed and silicon single crystal ingot grown from the seed crystal. It consists of a seed chuck 62 which is provided to hold (I) to the lower side and is connected to each other.

The seed connecting chuck 6 is formed to be detachable from the wire W for maintenance work and periodic replacement of the wire W.

An insertion hole through which the wire W penetrates is formed at the lower end of the wire W, and an adapter 63 is formed to have a step so that the outer periphery of the lower part is wider than the upper part.

The housing main body 61 has an accommodating space in the upper inner side, the upper end is round, forms a rod of a predetermined length, and the seed chuck 62 in which the silicon single crystal ingot I is mounted and coupled to the lower side is coupled to load. Will be supported.

An upper portion of the housing body 61 has an adapter inlet in the form of a long groove extending into the receiving space inside the adapter 63 in the shape of an opening, the diameter corresponding to the upper circumference of the adapter 63 in the center of the upper end The adapter fixing groove is formed.

Adapter (63) fixed to the lower end of the wire (W) is inserted laterally through the adapter inlet of the housing body 61, the upper portion of the adapter (63) is inserted from below into the adapter fixing groove, the adapter (63) The lower portion of the lower portion is formed wider than the adapter fixing groove, it is fixed by the load of the housing body 61 and the silicon single crystal ingot (I) connected downward.

However, such a connection structure between the seed connecting chuck 6 and the adapter 63 is thermally deformed (expanded) by heating in the reaction chamber 1, so that the upper portion of the adapter 63 is the adapter fixing groove. Will result in a shape that does not fall out.

Accordingly, in order to separate the adapter 63 from the seed connecting chuck 6, it must be physically separated or forced to be separated. Therefore, it is difficult to replace the wire W and the seed connecting chuck 6 is damaged. There have been a number of problems, including but not limited to.

Therefore, there is a need for an apparatus for preventing the damage to the seed connecting chuck 6 during internal maintenance work of the silicon single crystal ingot forming apparatus or replacing the wire W, and for easy detachment.

The present invention is to solve the above problems, a structure in which the inlet space and the incision is formed in the housing body of the seed connection chuck provided for mounting the silicon single crystal ingot on the lower end of the wire is adjusted by the insertion of screws To achieve this, it is an object of the present invention to provide a silicon single crystal ingot forming apparatus that can be easily removed without damaging the seed connecting chuck when the wire is replaced.

In the structure of the present invention for achieving the above object, in the silicon single crystal ingot forming apparatus comprising a reaction chamber, a chamber raising and lowering unit, a wire pulling unit and a seed connecting chuck to produce a silicon single crystal ingot that is the base material of the silicon wafer The seed connecting chuck may include: a cylindrical adapter having a step in which an insertion hole through which a wire penetrates is formed in a center thereof, and an outer circumference of the lower part is wider than an outer circumference of the upper part; In the form of a rod having a rounded upper end portion, the upper portion has an inflow space penetrating to both sides to allow the adapter to flow therein, and an inner surface of each of the upper ends facing each other by a cutout extending vertically from the inflow space. The housing body is spaced apart from the predetermined interval, the center of the inner surface of the upper end of each adapter receiving groove corresponding to the upper circumference of the adapter is symmetrically formed; And a seed chuck having an upper end detachably coupled to a lower side of the housing body, and having a silicon single crystal ingot grown from seed crystals at a lower portion thereof.

In addition, the outer surface of the upper end of the housing body is formed through the screw coupling hole through the inner surface of the incision, characterized in that the gap between the incision is opened by a tilting action by inserting a screw into the screw coupling hole.

In addition, the screw coupling hole is formed on both sides of the adapter receiving groove, characterized in that forming a pair.

In the present invention, the housing main body has an adapter inlet space in the seed connecting chuck provided at the lower end of the wire, and the upper end is formed by a cut-off spaced by a predetermined interval, and the adapter receiving grooves facing each other on the inner side thereof are symmetrically formed. By fixing the insertion, the operator has the effect of allowing the wire adapter to be easily removable without damaging the seed connecting chuck by screw adjustment.

1 is a view schematically showing the configuration of a conventional silicon single crystal ingot forming apparatus in the related art.
2 is a cross-sectional view showing the structure of a conventional seed connecting chuck.
3 is a cross-sectional view showing a seed connecting chuck connection structure of the present invention.
4 is a perspective view showing the shape of the seed connecting chuck of the present invention.

Hereinafter, the present invention will be described with reference to the accompanying drawings, and in the following description, when it is determined that a detailed description of a related well-known function or configuration may unnecessarily obscure the subject matter of the present invention, The description may be omitted.

In the silicon single crystal ingot forming apparatus of the present invention, the reaction chamber for heating polycrystalline silicon to be melted into a silicon solution S and the wire W are wound around the reaction chamber 1 to pull up. And a wire pulling unit (not shown) for rotating, the reaction chamber 1 is rotated and raised by a chamber lifting unit (not shown) provided on the lower side.

At this time, the seed crystal mounted on the seed connecting chuck 100 at the lower end of the wire W is immersed in the silicon solution S in the reaction chamber, and gradually pulled while being rotated by the wire pulling unit, and is exposed to room temperature. It is grown into a silicon single crystal ingot (I).

3 is a cross-sectional view showing a seed connection chuck connection structure of the present invention, Figure 4 is a perspective view showing the shape of the seed connection chuck of the present invention.

3 to 4, the shape and structure of the seed connecting chuck provided in the silicon single crystal ingot forming apparatus of the present invention will be described.

The seed connecting chuck 100 according to the present invention has a structure including an adapter 130, a housing body 110, and a seed chuck 120, such that the silicon single crystal ingot I grown in seed crystals is mounted thereon. It is provided in the lower end of (W).

The adapter 130 has an insertion hole through which the wire W penetrates to the center, and is formed in a cylindrical shape having a step so that the outer periphery of the lower part is wider than the upper part, and is fixed to the lower end of the wire W.

The housing main body 110 has an inflow space 112 penetrating in both sides to allow the adapter 130 to flow in the upper inner side, and the incision portion 113 extends vertically from the inflow space 112 to the upper end. Is formed, the upper end 111 forms two parts and forms a rod shape in which the upper end is rounded.

At this time, the upper end 111 of the housing body 110 divided to face each other is separated by a predetermined interval, by a cutout 113, each of the inner surface center corresponding to the upper circumference of the adapter 130 The adapter receiving groove (h) of the intaglio is symmetrically formed.

In addition, the upper end portion 111 facing each other is formed with one or more threaded holes 115 penetrating from the outer side to the inner side of the incision portion 113, the end of the screw is inserted into the incision portion 113 By pushing the opposite inner surface of the upper end portion is opened to the outer side by the tilting action, the width of the cutout 113 and the adapter receiving groove (h) is widened.

Accordingly, when the seed connecting chuck 100 is heated inside the reaction chamber 1 while the adapter 130 is inserted between the adapter receiving grooves h, the adapter 130 thermally expands, When tightly fastened in the inner side of the receiving groove (h), by inserting the screw, so that the incision 113 is forcibly opened, it is possible to adjust so that the adapter 130 is easily removed.

At this time, the screw coupling hole 115 is preferably located in both sides with the adapter receiving groove (h) therebetween, preferably formed in a pair to achieve a balance.

And, the seed chuck 120 is fixedly connected to the lower side of the housing body 110, the silicon single crystal ingot is grown in the seed crystal below the seed chuck 120 is mounted.

A coupling protrusion is formed at a lower portion of the housing body 110, and an insertion groove corresponding to the coupling protrusion is formed at an upper portion of the seed chuck 120, so as to be firmly in the form of being pinned or press-fitted in a state of being inserted and coupled to each other. Can be fixed.

Accordingly, the seed connection chuck 100 of the present invention can easily detach the wire adapter 130 from the housing body 110 by inserting screws for the internal maintenance work of the device and the periodic wire (W) replacement. It has a function.

As such, although the invention has been described by way of limited embodiments and drawings, the invention is not limited thereto and is within the scope of equivalents of ordinary skill and the claims to be described below in the technical field to which the invention pertains. Various modifications and variations are possible, of course.

100: seed connecting chuck 110: housing body
111: upper portion 112: inlet space
113: incision 115: screwing hole
120: seed chuck 130: adapter
h: Adapter groove I: Ingot
W: wire

Claims (3)

In the silicon single crystal ingot forming apparatus comprising a reaction chamber, a chamber raising and lowering unit, a wire pulling unit and a seed connecting chuck to manufacture a silicon single crystal ingot which is a base material of a silicon wafer,
The seed connection chuck is:
A cylindrical adapter having a step in which an insertion hole through which a wire penetrates is formed in a center thereof, and the outer periphery of the lower part is wider than the outer periphery of the upper part;
In the form of a rod having a rounded upper end portion, the upper portion has an inflow space penetrating to both sides to allow the adapter to flow therein, and an inner surface of each of the upper ends facing each other by a cutout extending vertically from the inflow space. The housing body is spaced apart from the predetermined interval, the center of the inner surface of the upper end of each adapter receiving groove corresponding to the upper circumference of the adapter is symmetrically formed; And
And a seed chuck having an upper end detachably coupled to a lower side of the housing body, and having a silicon single crystal ingot grown from seed crystals at a lower portion thereof.
The method of claim 1,
Silicon single crystal ingot forming apparatus characterized in that the screw coupling hole is formed through the inner surface of the upper end of the housing body through the inlet portion, the gap between the incision is opened by a tilting action by inserting a screw into the screw coupling hole. .
The method of claim 1,
The screw coupling holes are formed on both sides of the adapter receiving groove, respectively, to form a pair of silicon single crystal ingot forming apparatus.
KR1020100008309A 2010-01-29 2010-01-29 Silicon Single Crystal Ingot Forming Device KR101203969B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020100008309A KR101203969B1 (en) 2010-01-29 2010-01-29 Silicon Single Crystal Ingot Forming Device

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Application Number Priority Date Filing Date Title
KR1020100008309A KR101203969B1 (en) 2010-01-29 2010-01-29 Silicon Single Crystal Ingot Forming Device

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KR20110088688A true KR20110088688A (en) 2011-08-04
KR101203969B1 KR101203969B1 (en) 2012-11-22

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104674336A (en) * 2015-03-16 2015-06-03 宁晋赛美港龙电子材料有限公司 Traction mechanism for seed crystals in heavily-doped single crystal production process of single crystal furnace

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101402839B1 (en) 2012-01-03 2014-06-03 주식회사 엘지실트론 Unit for supplying silicon and apparatus for growing silicon single crystal ingot

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3402038B2 (en) * 1995-12-25 2003-04-28 信越半導体株式会社 Single crystal pulling device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104674336A (en) * 2015-03-16 2015-06-03 宁晋赛美港龙电子材料有限公司 Traction mechanism for seed crystals in heavily-doped single crystal production process of single crystal furnace
CN104674336B (en) * 2015-03-16 2017-02-22 宁晋赛美港龙电子材料有限公司 Traction mechanism for seed crystals in heavily-doped single crystal production process of single crystal furnace

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