KR20110080519A - Substrate for light emitting diode and method of manufacturing the same - Google Patents
Substrate for light emitting diode and method of manufacturing the same Download PDFInfo
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- KR20110080519A KR20110080519A KR1020100000783A KR20100000783A KR20110080519A KR 20110080519 A KR20110080519 A KR 20110080519A KR 1020100000783 A KR1020100000783 A KR 1020100000783A KR 20100000783 A KR20100000783 A KR 20100000783A KR 20110080519 A KR20110080519 A KR 20110080519A
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- aluminum nitride
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
Abstract
Description
본 발명은 발광다이오드 방열기술에 적용될 수 있는 질화알루미늄 중합체를 이용한 발광다이오드 기판 및 그 제조방법에 관한 것이다.The present invention relates to a light emitting diode substrate using an aluminum nitride polymer that can be applied to a light emitting diode heat dissipation technology, and a method of manufacturing the same.
일반적으로 발광다이오드 기판은 방열성을 높이기 위해 에폭시 기판(FR-4 기판)과 같은 수지계 기판이나 알루미늄과 동을 사용한 메탈베이스 기판을 사용하고 있다. 그런데, 수지계 기판의 경우에는 고출력 광에 의한 경화문제가 심각하고 발열에 의해 수지의 열화 및 열팽창에 의한 기밀성 저하 등 발광다이오드(LED)의 수명을 단축시키는 문제점이 발생하였고, 메탈베이스 기판의 경우에는 열전도율이 낮아 열을 유효하게 방산할 수 없는 문제점이 발생하였다.In general, a light emitting diode substrate uses a resin-based substrate such as an epoxy substrate (FR-4 substrate) or a metal base substrate using aluminum and copper to increase heat dissipation. However, in the case of the resin-based substrate, the problem of hardening due to high output light is serious, and the problem of shortening the lifetime of the light emitting diode (LED) such as deterioration of the resin and deterioration of airtightness due to thermal expansion occurs due to heat generation. There is a problem that can not effectively dissipate heat due to low thermal conductivity.
한편, 질화알루미늄(AlN; Aluminum Nitride)은 단결정으로서 고열전도성 및 고절연성을 갖는 물질이다. 그런데, 이런 질화알루미늄 분말을 이용하여 소결체를 제조하여 발광다이오드 기판으로서 직접 사용하는 경우에는 질화알루미늄 분말자체의 소결성이 좋지 않으므로, 분말성형 후 소결해서 얻게 되는 질화알루미늄 소결체의 상대밀도가 질화알루미늄의 이론밀도 3.26g/㎠를 기준으로 70 ~ 80%에 지나지 않고, 또한 다량의 기공을 포함하므로 열전도성이 저하되는 문제점이 발생하였다.Aluminum Nitride (AlN) is a single crystal and has a high thermal conductivity and high insulation. However, when the sintered body is manufactured using such an aluminum nitride powder and used directly as a light emitting diode substrate, the sinterability of the aluminum nitride powder itself is poor. Therefore, the relative density of the aluminum nitride sintered body obtained by sintering after powder molding is the theory of aluminum nitride. Only 70 to 80% based on the density 3.26g / ㎠ and also contains a large amount of pores, a problem that the thermal conductivity is lowered.
본 발명은 상기의 문제점을 해결하기 위한 것으로서, 발광다이오드 기판의 저면에 고열전도성 및 고절연성을 갖는 질화알루미늄 중합체를 이용하여 박막을 형성함으로써, 방열성이 우수한 발광다이오드 기판 및 그 제조방법을 제공하는데 그 목적이 있다.The present invention is to solve the above problems, to provide a light emitting diode substrate having excellent heat dissipation by forming a thin film using aluminum nitride polymer having high thermal conductivity and high insulation on the bottom surface of the light emitting diode substrate and its manufacturing method There is a purpose.
상기 목적을 달성하기 위해 본 발명에 따른 발광다이오드 기판 제조방법은, 상면에 발광다이오드가 탑재되는 인쇄회로면이 형성된 기판을 제조하는 인쇄회로기판 제조공정과; 액상의 유기 니트릴 화합물과 액상의 유기 알루미늄 화합물을 혼합하여 질화알루미늄 전구체를 생성하고, 생성된 질화알루미늄 전구체를 불활성 가스분위기에서 50℃ 이상으로 가열하여 질화알루미늄 중합체를 생성하는 질화알루미늄 중합체 생성공정과; 박막기술법을 이용하여 질화알루미늄 중합체를 기판의 저면에 박막 형성하는 방열용 박막 형성공정을 포함한다.In order to achieve the above object, there is provided a light emitting diode substrate manufacturing method comprising: a printed circuit board manufacturing process for manufacturing a substrate having a printed circuit surface on which a light emitting diode is mounted; Producing an aluminum nitride polymer by mixing the liquid organic nitrile compound and the liquid organic aluminum compound to produce an aluminum nitride precursor, and heating the produced aluminum nitride precursor to 50 ° C. or higher in an inert gas atmosphere to produce an aluminum nitride polymer; And a thin film forming process for heat dissipation which forms a thin film of an aluminum nitride polymer on a bottom surface of a substrate by using a thin film technique.
또한, 상기 질화알루미늄 중합체 생성공정은, 질화알루미늄 전구체를 불활성 가스분위기에서 50℃ ~ 250℃로 가열하여 1차의 질화알루미늄 중합체를 생성한 후, 1차의 질화알루미늄 중합체를 비양성자성 유기용매에 용해시킨 후, 환원성 가스, 불활성 가스 또는, 환원성 가스와 불활성 가스의 혼합가스 중 어느 하나의 가스 분위기에서 800℃ ~ 2,200℃로 가열하여 2차의 질화알루미늄 중합체를 생성하거나, 또는 질화알루미늄 전구체를 불활성 가스분위기에서 50℃ ~250℃로 가열하여 1차의 질화알루미늄 중합체를 생성한 후, 1차의 질화알루미늄 중합체를 비양성자성 유기용매에 용해시킨 후, 암모니아 가스 분위기에서 600℃로 가열하여 2차의 질화알루미늄 중합체를 생성할 수도 있다.In addition, the aluminum nitride polymer production step, the aluminum nitride precursor is heated to 50 ℃ ~ 250 ℃ in an inert gas atmosphere to produce a first aluminum nitride polymer, and then the first aluminum nitride polymer to the aprotic organic solvent After dissolving, heating is carried out at 800 ° C. to 2,200 ° C. in a gas atmosphere of a reducing gas, an inert gas, or a mixed gas of reducing gas and an inert gas to generate a secondary aluminum nitride polymer, or to inert an aluminum nitride precursor. After heating to 50 ~ 250 ℃ in the gas atmosphere to produce the first aluminum nitride polymer, the first aluminum nitride polymer was dissolved in the aprotic organic solvent, and then heated to 600 ℃ in ammonia gas atmosphere to make the secondary It is also possible to produce aluminum nitride polymers.
또한, 상기 질화알루미늄 중합체 생성공정에서, 질화알루미늄 전구체는 액상의 유기 니트릴 화합물과 액상의 유기 알루미늄 화합물을 혼합하기 전에, 액상의 유기 니트릴 화합물과 액상의 유기 알루미늄 화합물이 더 잘 섞이도록, 액상의 유기 알루미늄 화합물을 비양성자성의 유기용매에 먼저 혼합하여 생성하는 것이 바람직하다.Also, in the aluminum nitride polymer production process, the aluminum nitride precursor may be mixed with the liquid organic nitrile compound and the liquid organic aluminum compound before mixing the liquid organic nitrile compound with the liquid organic aluminum compound. It is preferable to produce the aluminum compound by first mixing the aprotic organic solvent.
또한, 상기 목적을 달성하기 위해 본 발명에 따른 발광다이오드 기판은 상기 발광다이오드 기판 제조방법으로 제조되는 것을 특징으로 한다.In addition, in order to achieve the above object, the light emitting diode substrate according to the present invention is characterized by being manufactured by the light emitting diode substrate manufacturing method.
이상과 같은 본 발명에 의하면, 발광다이오드 기판의 저면에 질화알루미늄 중합체를 이용하여 박막을 형성함으로써, 발광다이오드 소자로부터 발생하는 열을 빠르게 방산하여 방열성을 높일 수 있으며, 발광다이오드의 유효 이용률을 높일 수 있다.According to the present invention as described above, by forming a thin film using the aluminum nitride polymer on the bottom surface of the light emitting diode substrate, it is possible to quickly dissipate heat generated from the light emitting diode element to increase the heat dissipation, it is possible to increase the effective utilization rate of the light emitting diode have.
도 1은 본 발명의 일실시예에 따른 발광다이오드 기판 제조방법의 순서도를 나타낸다.1 is a flowchart illustrating a method of manufacturing a light emitting diode substrate according to an embodiment of the present invention.
이하, 첨부된 도면을 참조하여 상세히 설명하기로 한다. 그리고, 본 발명을 설명함에 있어서, 관련된 공지기능 혹은 공지 구성에 대한 구체적인 설명 또는 당업자에게 자명한 사항으로서 본 발명의 요지를 불필요하게 흐릴 수 있다고 판단되는 경우에는 그 상세한 설명을 생략하기로 한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. In the following description of the present invention, when it is determined that the detailed description of related known functions or known configurations or obvious matters to those skilled in the art may unnecessarily obscure the subject matter of the present invention, the detailed description thereof will be omitted.
도 1은 본 발명의 일실시예에 따른 발광다이오드 기판 제조방법의 순서도를 나타내는 것으로서, 본 발명에 따른 발광다이오드 기판 제조방법은, 상면에 발광다이오드가 탑재되는 인쇄회로면이 형성된 기판을 제조하는 인쇄회로기판 제조공정(S100)과; 액상의 유기 니트릴 화합물과 액상의 유기 알루미늄 화합물을 혼합하여 질화알루미늄 전구체를 생성하고, 생성된 질화알루미늄 전구체를 불활성 가스분위기에서 50℃ 이상으로 가열하여 질화알루미늄 중합체를 생성하는 질화알루미늄 중합체 생성공정(S200)과; 박막기술법을 이용하여 질화알루미늄 중합체를 기판의 저면에 박막 형성하는 방열용 박막 형성공정(S300)을 포함한다.1 is a flowchart illustrating a method of manufacturing a light emitting diode substrate according to an embodiment of the present invention. In the method of manufacturing a light emitting diode substrate according to the present invention, a method of manufacturing a substrate on which a printed circuit surface on which a light emitting diode is mounted is formed is formed. A circuit board manufacturing process (S100); Process for producing an aluminum nitride polymer by mixing the liquid organic nitrile compound and the liquid organic aluminum compound to produce an aluminum nitride precursor, and by heating the produced aluminum nitride precursor to 50 ℃ or more in an inert gas atmosphere (S200) )and; And a thin film forming process for dissipating a thin film of aluminum nitride polymer on the bottom surface of the substrate by using a thin film technology (S300).
상기 인쇄회로기판 제조공정(S100)은 일실시예로, 절연체인 에폭시 수지 또는 베이클라이트 수지로 만든 얇은 기판에 구리박을 붙인 후에, 계속하여 구리박으로 남아 있기를 원하는 회로 배선에는 레지스트를 인쇄한다 그리고, 구리를 녹일 수 있는 식각액에 인쇄된 기판을 담그면 레지스트가 묻지 않은 부분은 녹는다. 그 후에 레지스트를 제거하면 구리박이 원하는 형태로 남아 있다. 부품을 꽂아야 하는 부분에는 구멍을 뚫고 납이 묻으면 안되는 곳에는 푸른색의 납 레지스트를 인쇄하여 기판을 제조하게 된다. 한편, 기판은 알루미늄이나 동(구리)으로 이루어진 메탈베이스기판 또는, 세라믹 기판인 고방열성을 갖는 기판을 사용할 수도 있다. 또한, 고방열성 기판의 상면에 형성되는 절연층은 일반적인 절연소재를 이용하여 형성될 수 있으며, 또한, 절연층의 일부를 식각하는 것은 드라이 에칭방식과 같은 에칭방식을 이용하여 식각할 수 있다. 이와 같은 인쇄회로기판 제조공정(S100)은 공지된 기술인 것으로서 자세한 설명은 생략하기로 한다.The printed circuit board manufacturing process (S100) is, in one embodiment, after attaching a copper foil to a thin substrate made of an epoxy resin or a bakelite resin as an insulator, and then prints a resist on the circuit wiring which is desired to remain copper foil and If you immerse the printed substrate in an etchant that can dissolve copper, the non-resist areas will melt. The resist is then removed to leave the copper foil in the desired form. In the part where the part should be inserted, a hole is made and a blue lead resist is printed where a lead is not to be produced to manufacture a substrate. The substrate may be a metal base substrate made of aluminum or copper (copper), or a substrate having high heat dissipation, which is a ceramic substrate. In addition, the insulating layer formed on the upper surface of the high heat dissipation substrate may be formed using a common insulating material, and etching part of the insulating layer may be etched using an etching method such as a dry etching method. Such a printed circuit board manufacturing process (S100) is a well-known technique and a detailed description thereof will be omitted.
한편, 상기 질화알루미늄 중합체 생성공정(S200)에서, 유기 니트릴 화합물은 일반식 R-CN으로 나타내는 질소화합물을 의미하는 것으로서, R은 탄소수 1 내지 12의 알킬, 씨클로알킬 또는 아릴기이다. 유기 니트릴 화합물은 예로써, 아세토니트릴(CH3CN), 프로피온니트릴(C2H5CN), 브티로니트릴(C3H7CN), 벤젠니트릴(C6H5CN), 프타로니트릴(C6H4(CN)2), 이소프타로니트릴(C8C14N2), 테레프타로니트릴(C6H4(CN)2), 1,4-다이사이아노-2-뷰테인(C6H6N2), 이시안화이아미드(C2H4N4), 아디포니트릴(NC(CH2)4CN) 또는, 아크릴로니트릴(C3H3N) 중 어느 하나 이상의 질소 혼합물이다.On the other hand, in the aluminum nitride polymer production step (S200), the organic nitrile compound means a nitrogen compound represented by the general formula R-CN, R is an alkyl, cycloalkyl or aryl group having 1 to 12 carbon atoms. The organic nitrile compound is, for example, acetonitrile (CH 3 CN), propionitrile (C 2 H 5 CN), butyronitrile (C 3 H 7 CN), benzenenitrile (C 6 H 5 CN), phthalonitrile ( C 6 H 4 (CN) 2 ), isophthalonitrile (C 8 C 14 N 2 ), terephthalonitrile (C 6 H 4 (CN) 2 ), 1,4-diisano-2-butane ( Nitrogen mixture of any one of C 6 H 6 N 2 ), dicyandiamide (C 2 H 4 N 4 ), adiponitrile (NC (CH 2 ) 4 CN), or acrylonitrile (C 3 H 3 N) to be.
또한, 상기 유기 알루미늄 화합물은 R'R''Al-X 구조를 갖는 알킬 알루미늄 화합물을 의미하는 것으로서, R' 및 R''는 탄소수 1 내지 12의 알킬기(CnH2n +1)이다. 유기 알루미늄 화합물은 예로써, 메틸기, 에틸기, i-프로필기, n-프로필기, i-부틸기, n-부틸기 등이 있다.In addition, the organoaluminum compound means an alkyl aluminum compound having a structure of R'R''Al-X, wherein R 'and R''are alkyl groups having 1 to 12 carbon atoms (C n H 2n +1 ). Examples of the organoaluminum compound include methyl group, ethyl group, i-propyl group, n-propyl group, i-butyl group, n-butyl group and the like.
또한, 상기 질화알루미늄 중합체 생성공정(S200)에서, 액상의 유기니트릴 화합물과 액상의 유기 알루미늄 화합물을 혼합하면, 질화알루미늄 전구체는 치환기인 R, R' 및 R''에 따라 아민((CH2)nNH) 단량체를 형성하거나, 고리모양의 올리고머를 형성하기도 한다. 보다 정확한 아민의 모양은 원자의 입체적 배치 구조와 치환기의 전기적 특성에 따라 정해지게 된다. 특히, 액상의 유기니트릴 화합물과 액상의 유기 알루미늄 화합물을 혼합하는 비율은 몰(mole)수의 비(유기 니트릴 화합물의 질소의 몰수/유기 알루미늄 화합물의 알루미늄의 몰수)가 1 ~ 1.5인 것이 바람직하며, 보다 바람직하게는 1.1 ~ 1.2가 바람직하다. 그 이유는, 유기 알루미늄 화합물의 첨가량이 너무 많으면 유기 니트릴 화합물과 유기 알루미늄 화합물이 반응후 유기 알루미늄 화합물이 잔류하여 폭발의 위험성이 있고, 유기 알루미늄 화합물의 첨가량이 너무 적으면 질화알루미늄 생성에 관여하지 않는 유기 니트릴 화합물의 비율이 증가하여 경제성이 떨어지기 때문이다. In addition, in the aluminum nitride polymer production process (S200), when the liquid organic nitrile compound and the liquid organic aluminum compound are mixed, the aluminum nitride precursor is amine ((CH 2 ) according to substituents R, R 'and R''. n NH) monomers or cyclic oligomers. The more precise shape of the amine depends on the steric configuration of the atoms and the electrical properties of the substituents. In particular, the ratio of mixing the liquid organic nitrile compound and the liquid organic aluminum compound preferably has a mole number ratio (mole number of nitrogen of the organic nitrile compound / mole number of aluminum of the organic aluminum compound) of 1 to 1.5. More preferably, 1.1 to 1.2 are preferable. The reason is that if the addition amount of the organoaluminum compound is too high, there is a risk of explosion due to the organoaluminum compound remaining after the reaction of the organic nitrile compound and the organoaluminum compound. This is because the proportion of the organic nitrile compound is increased and economic efficiency is lowered.
또한, 상기 질화알루미늄 중합체 생성공정(S200)은, 질화알루미늄 전구체를 50℃ ~ 250℃로 가열하여 잔류하는 용매를 증발시킴으로써, 질화알루미늄 전구체의 침전물 즉, 질화알루미늄 중합체를 생성하게 된다. 이때, 질화알루미늄 전구체는 대기 중에서 용이하게 산화되어 발열하므로 질화알루미늄 중합체 생성공정(S200) 동안 질소 등의 불활성 가스 분위기 중에서 보존하는 것이 바람직하다. 또한, 일실시예로써, 질화알루미늄 중합체 생성공정(S200)에서 불활성 가스분위기에서 50℃ ~ 250℃로 가열한 후, 추가적인 열처리를 하여 보다 교차 결합된 질화알루미늄 중합체를 생성할 수도 있다.In addition, the aluminum nitride polymer producing step (S200), by heating the aluminum nitride precursor to 50 ℃ ~ 250 ℃ to evaporate the remaining solvent, to produce a precipitate of the aluminum nitride precursor, that is, an aluminum nitride polymer. At this time, since the aluminum nitride precursor is easily oxidized and generates heat in the air, the aluminum nitride precursor is preferably stored in an inert gas atmosphere such as nitrogen during the aluminum nitride polymer production process (S200). In addition, in one embodiment, after heating to 50 ℃ ~ 250 ℃ in an inert gas atmosphere in the aluminum nitride polymer production process (S200), may be further heat-treated to produce a more cross-linked aluminum nitride polymer.
상기 방열용 박막 형성공정(S300)에서, 박막기술법은 예로써, 스핀코팅법, 딥코팅법, 진공증착법, 스퍼터링법, 플라즈마 및 전자빔 물리증착법, 저온 기상증착법, 펄스 레이저 증착법, 전석법 및 졸-겔법 등이 있다. 또한, 박막기술법은 발광다이오드 기판의 소재, 특성, 형상 및, 질화 알루미늄 전구체의 성분 종류를 고려하여 적절하게 사용될 수 있다. 참고적으로, 방열용 박막 형성공정(S300)에서, 박막 형성후 건조시에는 장시간 건조시키거나, 건조조절제를 첨가하여 질화알루미늄 중합체의 기공크기와 분포의 조절을 적절하게 유도할 수 있다. 또한, 기판의 저면에 질화알루미늄 중합체로 박막을 형성할 때, 질화알루미늄 중합체가 기판에 잘 접합되도록 하기 위해서 박막 형성 전에 기판 저면에 열전도성 접착제층을 미리 형성할 수도 있다. In the heat dissipation thin film forming process (S300), the thin film technique is, for example, spin coating, dip coating, vacuum deposition, sputtering, plasma and electron beam physical vapor deposition, low temperature vapor deposition, pulse laser deposition, electrodeposition and sol- Gel method; In addition, the thin film technique may be suitably used in consideration of the material, characteristics, shape of the light emitting diode substrate, and the component type of the aluminum nitride precursor. For reference, in the heat dissipation thin film forming process (S300), the drying after the thin film is dried for a long time, or by adding a drying regulator can appropriately induce the control of the pore size and distribution of the aluminum nitride polymer. In addition, when the thin film is formed of an aluminum nitride polymer on the bottom of the substrate, a thermally conductive adhesive layer may be previously formed on the bottom of the substrate before the thin film is formed so that the aluminum nitride polymer is well bonded to the substrate.
또한, 일실시예로써, 상기 질화알루미늄 중합체 생성공정(S200)은, 질화알루미늄 전구체를 불활성 가스분위기에서 50℃ ~ 250℃로 가열하여 1차의 질화알루미늄 중합체를 생성한 후, 1차의 질화알루미늄 중합체를 비양성자성 유기용매에 용해시킨 후, 환원성 가스, 불활성 가스 또는, 환원성 가스와 불활성 가스의 혼합가스 중 어느 하나의 가스 분위기에서 800℃ ~ 2,200℃(보다 바람직하게는 1400℃ ~ 1,700℃)로 가열하여 2차의 질화알루미늄 중합체를 생성할 수 있으며, 또는, 질화알루미늄 전구체를 불활성 가스분위기에서 50℃ ~250℃로 가열하여 1차의 질화알루미늄 중합체를 생성한 후, 1차의 질화알루미늄 중합체를 비양성자성 유기용매에 용해시킨 후, 암모니아 가스 분위기에서 600℃로 가열하여 2차의 질화알루미늄 중합체를 생성할 수도 있다. In addition, in one embodiment, the aluminum nitride polymer production step (S200), after the aluminum nitride precursor is heated to 50 ℃ ~ 250 ℃ in an inert gas atmosphere to produce a primary aluminum nitride polymer, the first aluminum nitride After dissolving the polymer in an aprotic organic solvent, 800 ° C to 2,200 ° C (more preferably 1400 ° C to 1,700 ° C) in a gas atmosphere of a reducing gas, an inert gas, or a mixed gas of a reducing gas and an inert gas. Can be heated to produce a secondary aluminum nitride polymer, or the aluminum nitride precursor is heated to 50 ° C. to 250 ° C. in an inert gas atmosphere to produce a primary aluminum nitride polymer, followed by a primary aluminum nitride polymer. May be dissolved in an aprotic organic solvent and then heated to 600 ° C. in an ammonia gas atmosphere to produce a secondary aluminum nitride polymer.
상기 환원성 가스로는 암모니아, 수소 등이 있으며, 불활성 가스로는 질소, 아르곤, 헬륨, 네온 에틸렌, 에탄 등이 있다. 또한, 각 가스분위기의 가스 함유량은 대략 10% 내외가 바람직하며, 가열시 승온속도는 10℃/분 또는 500℃/시간정도가 바람직하다. 또한, 질화 알루미늄 중합체의 결정질 겔의 경우 결정립 성장과 상전이 과정이 더 복잡하게 일어난다. 결정질 재료의 치밀화 동력학은 더 느리고 미세구조에 의존한다. 상전이 중에 생긴 광범위한 결정립 성정과 함께 낮은 성형밀도가 정체된 소결이 일어날 수 있으므로 소결시 완전히 치밀화가 된 후 결정화를 시키는 것이 바람직하다.Examples of the reducing gas include ammonia and hydrogen, and inert gases include nitrogen, argon, helium, neon ethylene, and ethane. In addition, the gas content of each gas atmosphere is preferably about 10%, and the heating rate during heating is preferably about 10 ° C / min or about 500 ° C / hour. In addition, in the case of crystalline gels of aluminum nitride polymers, grain growth and phase transition processes are more complicated. The densification kinetics of the crystalline material is slower and depends on the microstructure. Since sintering with low mold density and stagnation may occur together with extensive grain formation during phase transition, it is preferable to crystallize after thorough densification during sintering.
또한, 상기 비양성자성 유기용매는 예로써, 헥산, 톨루엔, 자이렌, 디에틸 에테르, 1차 아민(primary amine)(R-NH2)(여기서, R은 탄소수 1 내지 12의 알킬기, 씨클로알킬기, 아릴기이다) 또는 암모니아 등이 있다.
In addition, the aprotic organic solvent is, for example, hexane, toluene, xylene, diethyl ether, primary amine (primary amine) (R-NH 2 ) (wherein R is an alkyl group having 1 to 12 carbon atoms, cycloalkyl group , An aryl group), or ammonia.
바람직한 일실시예로서, 2방 코크, 적하 로드를 장착한 용량 3,000ml의 플라스크 중에 프로피온니트릴 65ml와 수소화디소부틸알루미늄 100ml를 삽입하고, 내부를 아르곤 치환하였다. 이후, 마그네틱 교반기로 교반하면서 몰량을 적하하였다. 적하후 상온으로 유지하여 12시간 가량 교반하였다. 12시간 후 밝은 노란색의 질화 알루미늄 전구체가 생성되면, 0.35torr에서 87℃로 가열하여 잔여의 프로피온니트릴과 용매를 증발시켜 붉은 적색의 질화 알루미늄 중합체를 생성하였다. 이후, 질소 분위기하에서 180℃ ~ 250℃에서 열처리를 하였다. 이어서, 붉은 적색의 질화 알루미늄 중합체를 스핀 코팅법으로 발광다이오드용 기판인 알루미나 기판의 저면에 증착시켜서 발광다이오드 기판을 형성하였다. 또는 또다른 실시예로써, 붉은 적색의 질화알루미늄 중합체를 유기용매인 헥산에 녹인후, 암모니아 분위기 중에서 600℃까지 승온속도 10℃/분으로 가열하고, 2시간 동안 질화알루미늄 중합체의 결정화를 위해 600℃를 유지한 후, 스핀 코팅법으로 발광다이오드용 기판인 알루미나 기판의 저면에 증착시켜서 발광다이오드 기판을 형성하였다.In a preferred embodiment, 65 ml of propionitrile and 100 ml of disobutylaluminum hydride were inserted into a flask having a volume of 3,000 ml equipped with a 2-way coke and a dropping rod, and the inside was argon-substituted. Thereafter, the molar amount was added dropwise while stirring with the magnetic stirrer. After dropping, the mixture was kept at room temperature and stirred for about 12 hours. After 12 hours, a light yellow aluminum nitride precursor was produced, which was heated to 87 ° C. at 0.35 torr to evaporate the remaining propionitrile and solvent to produce a reddish red aluminum nitride polymer. Thereafter, heat treatment was performed at 180 ° C. to 250 ° C. under a nitrogen atmosphere. Subsequently, a reddish aluminum nitride polymer was deposited on the bottom surface of the alumina substrate, which is a substrate for light emitting diodes, by spin coating to form a light emitting diode substrate. Alternatively, as another example, the reddish red aluminum nitride polymer is dissolved in hexane, an organic solvent, and then heated to 600 ° C. in an ammonia atmosphere at a heating rate of 10 ° C./min, and 600 ° C. for crystallization of the aluminum nitride polymer for 2 hours. After maintaining, the light emitting diode substrate was formed by depositing on the bottom surface of the alumina substrate which is a substrate for light emitting diodes by spin coating.
또한, 바람직한 실시예로써, 질화알루미늄 중합체 생성공정(S200)에서, 질화알루미늄 전구체는 액상의 유기 니트릴 화합물과 액상의 유기 알루미늄 화합물을 혼합하기 전에, 액상의 유기 니트릴 화합물과 액상의 유기 알루미늄 화합물이 더 잘 섞이도록, 액상의 유기 알루미늄 화합물을 비양성자성의 유기용매에 먼저 혼합하여 생성하는 것이 바람직하다.Further, in a preferred embodiment, in the aluminum nitride polymer production process (S200), the aluminum nitride precursor may be further added to the liquid organic nitrile compound and the liquid organic aluminum compound before mixing the liquid organic nitrile compound and the liquid organic aluminum compound. In order to mix well, it is preferable to produce a liquid organoaluminum compound by first mixing it with an aprotic organic solvent.
또한, 상기 목적을 달성하기 위해 본 발명에 따른 발광다이오드 기판은 상기 발광다이오드 기판 제조방법으로 제조되는 것을 특징으로 한다.In addition, in order to achieve the above object, the light emitting diode substrate according to the present invention is characterized by being manufactured by the light emitting diode substrate manufacturing method.
또한, 본 발명은 발광다이오드 기판으로 한정하였으나, 다른 방열성을 목적으로 하는 반도체 회로 기판에 적용가능함은 말할 것도 없다.In addition, although the present invention is limited to the light emitting diode substrate, it goes without saying that the present invention can be applied to a semiconductor circuit board for other heat dissipation purposes.
이상과 같은 본 발명에 의하면, 발광다이오드 기판의 저면에 질화알루미늄 중합체를 이용하여 박막을 형성함으로써, 발광다이오드 소자로부터 발생하는 열을 빠르게 방산하여 방열성을 높일 수 있으며, 발광다이오드의 유효 이용률을 높일 수 있다.According to the present invention as described above, by forming a thin film using the aluminum nitride polymer on the bottom surface of the light emitting diode substrate, it is possible to quickly dissipate heat generated from the light emitting diode element to increase the heat dissipation, it is possible to increase the effective utilization rate of the light emitting diode have.
이상, 본 발명에 대하여 도면과 실시예를 가지고 설명하였으나, 본 발명은 특정 실시예에 한정되지 않으며, 이 기술분야에서 통상의 지식을 가진 자라면 본 발명의 범위에서 벗어나지 않으면서 많은 수정과 변형이 가능함을 이해할 것이다. 또한, 상기 도면은 발명의 이해를 돕기 위해 도시된 것으로서, 청구범위를 한정하도록 이해해서는 아니될 것이다. In the above, the present invention has been described with reference to the drawings and embodiments, but the present invention is not limited to the specific embodiments, and those skilled in the art can make many modifications and variations without departing from the scope of the present invention. I will understand what is possible. In addition, the drawings are shown for the purpose of understanding the invention and should not be understood to limit the scope of the claims.
Claims (5)
액상의 유기 니트릴 화합물과 액상의 유기 알루미늄 화합물을 혼합하여 질화알루미늄 전구체를 생성하고, 생성된 질화알루미늄 전구체를 불활성 가스분위기에서 50℃ 이상으로 가열하여 질화알루미늄 중합체를 생성하는 질화알루미늄 중합체 생성공정과;
박막기술법을 이용하여 질화알루미늄 중합체를 기판의 저면에 박막 형성하는 방열용 박막 형성공정을 포함하는 발광다이오드 기판 제조방법.A printed circuit board manufacturing process for manufacturing a substrate having a printed circuit surface on which a light emitting diode is mounted;
Producing an aluminum nitride polymer by mixing the liquid organic nitrile compound and the liquid organic aluminum compound to produce an aluminum nitride precursor, and heating the produced aluminum nitride precursor to 50 ° C. or higher in an inert gas atmosphere to produce an aluminum nitride polymer;
A method of manufacturing a light emitting diode substrate, the method comprising: forming a thin film for dissipating an aluminum nitride polymer on a bottom surface of a substrate by using a thin film technology.
상기 질화알루미늄 중합체 생성공정은, 질화알루미늄 전구체를 불활성 가스분위기에서 50℃ ~ 250℃로 가열하여 1차의 질화알루미늄 중합체를 생성한 후, 1차의 질화알루미늄 중합체를 비양성자성 유기용매에 용해시킨 후, 환원성 가스, 불활성 가스 또는, 환원성 가스와 불활성 가스의 혼합가스 중 어느 하나의 가스 분위기에서 800℃ ~ 2,200℃로 가열하여 2차의 질화알루미늄 중합체를 생성하는 것을 특징으로 하는 발광다이오드 기판 제조방법.The method of claim 1,
In the aluminum nitride polymer production step, the aluminum nitride precursor is heated to 50 ° C. to 250 ° C. in an inert gas atmosphere to produce a first aluminum nitride polymer, and then the first aluminum nitride polymer is dissolved in an aprotic organic solvent. And then heating to 800 ° C to 2,200 ° C in any one of a reducing gas, an inert gas, or a mixed gas of reducing gas and inert gas to produce a secondary aluminum nitride polymer. .
상기 질화알루미늄 중합체 생성공정은, 질화알루미늄 전구체를 불활성 가스분위기에서 50℃ ~250℃로 가열하여 1차의 질화알루미늄 중합체를 생성한 후, 1차의 질화알루미늄 중합체를 비양성자성 유기용매에 용해시킨 후, 암모니아 가스 분위기에서 600℃로 가열하여 2차의 질화알루미늄 중합체를 생성하는 것을 특징으로 하는 발광다이오드 기판 제조방법.The method of claim 1,
In the aluminum nitride polymer production process, the aluminum nitride precursor is heated to 50 ° C. to 250 ° C. in an inert gas atmosphere to produce a first aluminum nitride polymer, and then the first aluminum nitride polymer is dissolved in an aprotic organic solvent. And then heating to 600 ° C. in an ammonia gas atmosphere to produce a secondary aluminum nitride polymer.
상기 질화알루미늄 중합체 생성공정에서, 질화알루미늄 전구체는 액상의 유기 니트릴 화합물과 액상의 유기 알루미늄 화합물을 혼합하기 전에, 액상의 유기 니트릴 화합물과 액상의 유기 알루미늄 화합물이 더 잘 섞이도록, 액상의 유기 알루미늄 화합물을 비양성자성의 유기용매에 먼저 혼합하여 생성하는 것을 특징으로 하는 발광다이오드 기판 제조방법.The method of claim 1,
In the aluminum nitride polymer production process, the aluminum nitride precursor is a liquid organic aluminum compound so that the liquid organic nitrile compound and the liquid organic aluminum compound are better mixed before the liquid organic nitrile compound and the liquid organic aluminum compound are mixed. Method of producing a light emitting diode substrate, characterized in that by first mixing with an aprotic organic solvent.
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