KR20110077297A - Carrier for double side polishing apparatus - Google Patents

Carrier for double side polishing apparatus Download PDF

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Publication number
KR20110077297A
KR20110077297A KR1020090133825A KR20090133825A KR20110077297A KR 20110077297 A KR20110077297 A KR 20110077297A KR 1020090133825 A KR1020090133825 A KR 1020090133825A KR 20090133825 A KR20090133825 A KR 20090133825A KR 20110077297 A KR20110077297 A KR 20110077297A
Authority
KR
South Korea
Prior art keywords
carrier
wafer
double
polishing apparatus
wear protection
Prior art date
Application number
KR1020090133825A
Other languages
Korean (ko)
Inventor
이지혜
Original Assignee
주식회사 엘지실트론
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Filing date
Publication date
Application filed by 주식회사 엘지실트론 filed Critical 주식회사 엘지실트론
Priority to KR1020090133825A priority Critical patent/KR20110077297A/en
Publication of KR20110077297A publication Critical patent/KR20110077297A/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The present invention relates to a carrier for a double-side polishing apparatus capable of ensuring excellent flatness of a wafer. In the carrier for a double-side polishing apparatus of the present invention, a wear protection layer is coated on the side of the mounting hole for holding the wafer, and the upper and lower surfaces around the mounting hole.

Double sided polishing device, carrier, mounting hole, wear protection layer

Description

Carrier for double side polishing apparatus

The present invention relates to a carrier for a double-side polishing apparatus, and more particularly, to a carrier for a double-side polishing apparatus capable of ensuring excellent flatness of a wafer.

In general, in a silicon wafer manufacturing method, a polishing process is performed to improve the flatness of a silicon wafer (hereinafter referred to as a “wafer”), where the polishing process is typically performed by using a double-side polishing apparatus. Is polishing.

Referring to FIG. 1, the double-sided polishing apparatus 1 includes a lower plate 10 having a polishing pad 12 attached to an upper surface thereof, a polishing pad 22 attached to a lower surface thereof, and rotating the wafer W from above. The upper plate 20 and the carrier 50 is installed between the lower plate 10 and the upper plate 20 and the wafer (W) is mounted.

At this time, the polishing pads 12 and 22 used in the polishing process of the wafer W are manufactured by impregnating polymers in felts (nonwoven fabric) or made of polyurethane.

More specifically, the inner gear 30 (internal gear) is provided on the outer circumference of the lower plate 10, and the sun gear 40 is installed at the center of the upper plate 20. The internal gear 30 and the sun gear 40 are respectively rotated in opposite directions as the lower plate 10 and the upper plate 20 rotate in opposite directions.

The carrier 50 has a substantially disc shape, and a gear 52 is formed at an outer circumference thereof to be engaged with the sun gear 40 and the internal gear 30. The carrier 50 is provided with a mounting hole 51 for mounting the wafer (W). Therefore, the wafer W is in close contact with the polishing pad 22 of the upper plate 20 and the polishing pad 12 of the lower plate 10 in a state where the wafer W is mounted on the carrier 50.

Meanwhile, a nozzle (not shown) for supplying a slurry (hereinafter referred to as a “polishing liquid”) in which abrasive particles and various additives are mixed is provided on the upper surface of the upper surface plate 20, and the upper surface plate 20 is provided. ) Is provided with an inlet (not shown) penetrated so that the polishing liquid supplied through the nozzle flows into the lower plate 10 side. That is, the polishing liquid is supplied through the inlet when the wafer W is polished. Accordingly, the wafer W in close contact with the polishing pads 12 and 22 is mechanically and chemically polished by a frictional force and a polishing liquid caused by relative movement.

That is, when the double-side polishing apparatus 1 is operated, the lower plate 10 and the upper plate 20 are rotated in opposite directions by a driving source (not shown), and the internal gear 30 and the sun gear 40 are also rotated. In conjunction with this, they are rotated in opposite directions. By rotating the internal gear 30 and the sun gear 40, the carrier 50 rotates and rotates to polish the wafer W by the polishing liquid and the high pressure processing pressure.

However, when polishing the wafer W, the carrier 50 is also simultaneously polished, so that the thickness of the carrier 50 becomes thinner as the polishing proceeds. In the related art, the flatness of the wafer W is deteriorated due to the thickness change of the carrier 50. That is, the pressure of the lower plate 10 and the upper plate 20 is concentrated on the edge portion of the wafer W by the thinner carrier 50, so that the polishing of the edge portion of the wafer W is intensified. There was a problem of being formed in a convex shape.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object thereof is to provide a carrier for a double-side polishing apparatus which can ensure excellent flatness of a wafer.

In order to achieve the above object, the carrier for a double-side polishing apparatus of the present invention, the wear protection layer is coated on the side surface of the mounting hole for holding the wafer, the upper and lower surfaces around the mounting hole.

Preferably, the wear protection layer may be further coated on the side of the gear portion, the upper and lower surfaces around the gear portion.

Preferably, the antiwear layer has a thickness of 5 μm and a top width and a bottom width of 20 mm.

Preferably, the wear protection layer may be made of a material that is more durable than the carrier, the wear protection layer is made of at least one material selected from the group consisting of aramid, Diamond Like Carbon (DLC), high strength organic fibers, graphite. Can be.

The carrier for a double-side polishing apparatus according to the present invention has the following effects.

First, the flatness quality of the wafer can be improved.

Second, it is possible to increase the durability of the carrier for double-sided polishing apparatus.

Third, it is possible to extend the life of the carrier for the double-side polishing apparatus.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms or words used in the specification and claims should not be construed as having a conventional or dictionary meaning, and the inventors should properly explain the concept of terms in order to best explain their own invention. Based on the principle that can be defined, it should be interpreted as meaning and concept corresponding to the technical idea of the present invention. Therefore, the embodiments described in the specification and the drawings shown in the drawings are only the most preferred embodiment of the present invention and do not represent all of the technical idea of the present invention, various modifications that can be replaced at the time of the present application It should be understood that there may be equivalents and variations.

2 is a view showing the configuration of a carrier for a double-side polishing apparatus according to the present invention, Figure 3 is a cross-sectional view taken along the line III-III 'carrier of the double-side polishing apparatus shown in FIG.

Referring to the drawings, the carrier 100 for a double-side polishing apparatus of the present invention has a disc shape, and includes a mounting hole 110 and a gear unit 120. The carrier 100 is formed of an epoxy resin material and has a thickness of 768㎛ to 770㎛.

The mounting hole 110 is a hole for mounting a wafer (not shown), that is, a hole into which the wafer is pivotally inserted. The mounting hole 110 is formed in a shape corresponding to the wafer, for example, circular. The mounting hole 110 has a larger diameter than the wafer so that the wafer is inserted into the mounting hole 110 to allow the pivoting movement. The mounting hole 110 is formed to a thickness smaller than that of the wafer so that the wafer can be polished.

Meanwhile, although FIG. 2 illustrates one mounting hole 110, the present invention is not limited thereto, and the mounting hole 110 may be one or a plurality of mounting holes 110. The size of the carrier 100 may be changed by the number of mounting holes 110.

The gear unit 120 is formed on the outer circumferential surface of the carrier 100. The gear unit 120 corresponds to an internal gear and a sun gear of a double-side polishing apparatus (not shown).

The wear preventing layer 130 is formed in the mounting hole 110. More specifically, the wear protection layer 130 is coated on the upper and lower surfaces of the side of the mounting hole 110 and the mounting hole 110 around. Here, the upper surface means the plane shown in FIG. 2, and the lower surface means the plane opposite to the upper surface.

The wear protection layer 130 prevents the carrier 100 from being worn during the polishing operation of the double-sided polishing apparatus. Accordingly, the wear protection layer 130 is made of a material that is less worn than the carrier 100 during the polishing operation, that is, a material that is more durable than the carrier 100. Preferably, the wear protection layer 130 may be made of at least one material selected from the group consisting of aramid, diamond like carbon (DLC), high strength organic fibers, and graphite.

Referring to FIG. 3, the wear protection layer 130 is formed to have a thickness T of 5 μm on the upper and lower surfaces of the side of the mounting hole 110 and around the mounting hole 110, and has an upper width W1 and a lower width. W2 is formed to a length of 20 mm. Here, the upper width W1 and the lower width W2 represent the upper length and the lower length of the wear protection layer 130 measured when the wear protection layer 130 is cut through the center of the mounting hole 110.

Here, when the thickness T of the wear protection layer 30 is too large or too small, it is preferable to have a thickness of 5 μm because a change in thickness of the wafer may occur or the wear protection function may be weak.

In addition, when the length of the upper width (W1) and the lower width (W2) of the wear protection layer 130 is too large, the processing pressure of the lower half and the upper half is concentrated on the wear protection layer 130 may reduce the polishing rate In the case where the lengths of the upper width W1 and the lower width W2 are too small, the wear protection function of the wear protection layer 130 may be weak, so that the length of the upper width W1 and the lower width W2 is 20 mm.

Meanwhile, the carrier 100 has a thickness of 768 μm to 770 μm, and the antiwear layer 30 has a thickness of 5 μm and an upper width W1 and a lower width W2 of 20 mm. For convenience of description, the thickness T 130, the width W 1, the width W 1, and the thickness of the carrier 100 of the wear protection layer 130 are enlarged.

The wear protection layer 130 may be further formed on the gear unit 120 to prevent wear of the gear unit 120. More specifically, the wear protection layer 130 may be further coated on the upper and lower surfaces of the side of the gear unit 120 and the gear unit 130. Even in this case, the wear protection layer 130 may have a thickness of 5 μm and an upper width and a lower width of 20 mm. That is, it has the same thickness and upper and lower widths as the wear protection layer 130 formed in the mounting hole 110. At this time, the upper width and the lower width is the upper and lower lengths of the wear protection layer 130 measured when the wear protection layer 130 is cut through the protruding portion of the gear unit 120 and the center of the carrier 100. Indicates. The wear protection layer 130 formed on the gear part 120 also preferably has a thickness of 5 μm in consideration of the thickness change and the wear protection function of the wafer, and is formed in a width of 20 mm in consideration of the polishing speed and the wear protection function. desirable.

A method of double-side polishing a wafer using the carrier 100 for a double-side polishing apparatus as described above will be described. First, the wafer is inserted into the mounting hole 110 of the carrier 100 for the double-side polishing apparatus, and the lower and upper plates are brought into pressure contact with the wafer. The double side polishing apparatus is operated while supplying the polishing liquid to the wafer. The wafer is polished chemically and mechanically according to the polishing liquid and the opposite rotation of the lower plate and the upper plate.

In the related art, since there was no configuration to prevent the polishing of the carrier, the wafer and the carrier were polished together, which caused a problem of lowering the flatness quality of the wafer. In particular, when the carrier having a reduced thickness is used, the wafer is formed into a convex shape as the edge of the wafer is excessively polished around the mounting hole where the thickness difference between the carrier and the wafer occurs, and the strength of the gear part is lowered and the gear part is broken. Occurred.

However, the carrier 100 for a double-side polishing apparatus of the present invention may prevent wear of the carrier 100 by forming an anti-wear layer 130 on the mounting hole 110 and the gear unit 120. In particular, the surface flatness of the wafer may be greatly improved by preventing wear in the mounting hole 110, which has a decisive effect on the surface flatness of the wafer.

In addition, the carrier 100 for a double-side polishing apparatus of the present invention can prevent the wear of the gear unit 120 and the damage thereof. Therefore, the carrier 100 for a double-side polishing apparatus of the present invention can increase the durability of the carrier and extend its life, and has an effect of improving the quality of the wafer.

As described above, although the present invention has been described by way of limited embodiments and drawings, the present invention is not limited thereto and is intended by those skilled in the art to which the present invention pertains. Of course, various modifications and variations are possible within the scope of equivalents of the claims to be described.

The present invention will be described in detail with reference to the following drawings, but these drawings illustrate preferred embodiments of the present invention, and the technical concept of the present invention is not limited to the drawings and should not be interpreted.

1 is a view showing a conventional double-side polishing apparatus.

Figure 2 is a plan view showing a carrier for a double-side polishing apparatus according to a preferred embodiment of the present invention.

3 is a cross-sectional view taken along line III-III '.

Claims (5)

In the carrier for a double-side polishing apparatus, Carrier for a two-side polishing apparatus, characterized in that the anti-wear layer is coated on the side of the mounting hole for holding the wafer, the upper and lower surfaces around the mounting hole. The method of claim 1, Carrier for a two-side polishing device, characterized in that the wear protection layer is further coated on the side of the gear portion, the upper and lower surfaces around the gear portion. The method of claim 1, The wear protection layer has a thickness of 5㎛, the upper width and the lower width carrier for a double-side polishing apparatus, characterized in that 20mm. The method of claim 1, The wear protection layer is a carrier for a double-side polishing apparatus, characterized in that made of a material stronger than the carrier. 5. The method of claim 4, The wear protection layer is a carrier for a double-side polishing device, characterized in that made of at least one material selected from the group consisting of aramid, Diamond Like Carbon (DLC), high strength organic fibers, graphite.
KR1020090133825A 2009-12-30 2009-12-30 Carrier for double side polishing apparatus KR20110077297A (en)

Priority Applications (1)

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KR1020090133825A KR20110077297A (en) 2009-12-30 2009-12-30 Carrier for double side polishing apparatus

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Application Number Priority Date Filing Date Title
KR1020090133825A KR20110077297A (en) 2009-12-30 2009-12-30 Carrier for double side polishing apparatus

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KR20110077297A true KR20110077297A (en) 2011-07-07

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150052060A (en) * 2012-09-06 2015-05-13 신에쯔 한도타이 가부시키가이샤 Double surface polishing method
KR20220113095A (en) * 2021-02-05 2022-08-12 에스케이실트론 주식회사 Carrier for double side polishing apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150052060A (en) * 2012-09-06 2015-05-13 신에쯔 한도타이 가부시키가이샤 Double surface polishing method
KR20220113095A (en) * 2021-02-05 2022-08-12 에스케이실트론 주식회사 Carrier for double side polishing apparatus

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