KR20110049329A - Image sensor and manufacturing method of image sensor - Google Patents

Image sensor and manufacturing method of image sensor Download PDF

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Publication number
KR20110049329A
KR20110049329A KR1020090106300A KR20090106300A KR20110049329A KR 20110049329 A KR20110049329 A KR 20110049329A KR 1020090106300 A KR1020090106300 A KR 1020090106300A KR 20090106300 A KR20090106300 A KR 20090106300A KR 20110049329 A KR20110049329 A KR 20110049329A
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South Korea
Prior art keywords
ion implantation
semiconductor substrate
forming
photoresist pattern
implantation region
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KR1020090106300A
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Korean (ko)
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조중연
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주식회사 동부하이텍
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Priority to KR1020090106300A priority Critical patent/KR20110049329A/en
Publication of KR20110049329A publication Critical patent/KR20110049329A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14623—Optical shielding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

In another embodiment, a method of manufacturing an image sensor includes forming a photodiode and an isolation layer on a semiconductor substrate, and forming a first photoresist pattern opening the region of the isolation layer; Forming a first ion implantation region at a predetermined depth on the semiconductor substrate under the device isolation layer through a first ion implantation process, and removing the first photoresist pattern; Forming a first insulating layer including metal wiring on the semiconductor substrate, and inverting the semiconductor substrate and the first insulating layer; Forming a second photoresist pattern on the bottom surface of the semiconductor substrate to open the device isolation layer; And forming a second ion implantation region from a bottom of the first ion implantation region to a bottom surface of the semiconductor substrate through a second ion implantation process, and removing the second photoresist pattern.

According to the embodiment, the optical path is stabilized and the optical interference phenomenon can be prevented by forming the ion implantation region functioning as the light shielding layer in a double structure. In addition, the presence, depth, and doping concentration of the light shielding layer may be easily adjusted according to the type of light, that is, the light transmission coefficient.

Image sensor, FSI structure, BSI structure, optical interference, ion implantation area, light shielding film

Description

Image sensor and manufacturing method of image sensor

Embodiments relate to an image sensor and a method for manufacturing the image sensor.

In an image sensor having a front side illumination (FSI) structure, light is incident on a photodiode of a semiconductor substrate from an image via a microlens, a color filter layer, and a metal wiring layer. In this case, as the pixels of the image sensor are smaller, the light is more affected by the metal wiring, so the metal wiring area is smaller and there is a lot of difficulty in the wiring process. For this reason, an image sensor having a back side illusion (BSI) structure is currently used. The image sensor of the BSI structure is a structure that allows light to be incident from the bottom surface of a semiconductor substrate without metal wiring.

1 is a side cross-sectional view showing the structure of an image sensor having a general BSI structure.

Referring to FIG. 1, an image sensor includes a semiconductor substrate 10 having a photodiode 12 and an isolation layer 11, a first insulating layer 20 having a metal wiring 21, and a second insulating layer 30. , A color filter layer 40, a planarization protective layer 50, and a microlens 60.

An isolation layer 11 and a photodiode 12 are formed on the semiconductor substrate 10, and the first insulating layer 20 is formed thereon.

Thereafter, the semiconductor substrate 10 is turned upside down so that the first insulating layer 20 faces downward and the semiconductor substrate 10 faces upward.

Next, the second insulating layer 30 to the microlens 60 are sequentially formed on the bottom surface of the semiconductor substrate 10 in an inverted state.

The BSI structure can exclude the influence of metal wiring, but is not properly isolated between the photodiodes 12 using Shallow Trench Isolation and Implantation Doping, thereby preventing optical interference (X-Talk). Very vulnerable to the phenomenon.

The embodiment provides an image sensor and a method of manufacturing the image sensor capable of minimizing optical interference and a decrease in sensitivity generated in a BSI structure.

The image sensor according to the embodiment relates to an image sensor having a BSI structure, comprising: an isolation layer formed on a semiconductor substrate; A photodiode formed on the semiconductor substrate between the device isolation layers; A first ion implantation region formed in the semiconductor substrate under the device isolation layer to a predetermined depth; A second ion implantation region formed from below the first ion implantation region to a bottom surface of the semiconductor substrate; And a first insulating layer formed on the semiconductor substrate and including metal wiring.

In another embodiment, a method of manufacturing an image sensor includes forming a photodiode and an isolation layer on a semiconductor substrate, and forming a first photoresist pattern opening the region of the isolation layer; Forming a first ion implantation region at a predetermined depth on the semiconductor substrate under the device isolation layer through a first ion implantation process, and removing the first photoresist pattern; Forming a first insulating layer including metal wiring on the semiconductor substrate, and inverting the semiconductor substrate and the first insulating layer; Forming a second photoresist pattern on the bottom surface of the semiconductor substrate to open the device isolation layer; And forming a second ion implantation region from a bottom of the first ion implantation region to a bottom surface of the semiconductor substrate through a second ion implantation process, and removing the second photoresist pattern.

In another embodiment, a method of manufacturing an image sensor includes forming a device isolation film on a semiconductor substrate and forming a first photoresist pattern opening the device isolation film region; After the first ion implantation process, a first ion implantation region is formed on the semiconductor substrate under the device isolation layer to a predetermined depth, and after the first photoresist pattern is removed, a photodiode is formed on the semiconductor substrate between the device isolation layers. Forming; Forming a first insulating layer including metal wiring on the semiconductor substrate, and inverting the semiconductor substrate and the first insulating layer; Forming a second photoresist pattern on the bottom surface of the semiconductor substrate to open the device isolation layer; And forming a second ion implantation region from a bottom of the first ion implantation region to a bottom surface of the semiconductor substrate through a second ion implantation process, and removing the second photoresist pattern.

According to the embodiment, the following effects are obtained.

First, the optical path is stabilized and the optical interference phenomenon can be prevented by forming the ion implantation region functioning as the light shielding layer in a double structure.

Second, the presence, depth, and doping concentration of the light shielding layer may be easily adjusted according to the type of light, that is, the light transmission coefficient.

Third, since the ion implantation region having a dual structure can be formed through one ion implantation mask, a light shielding layer having excellent effects can be realized through a minimized process.

An image sensor and a method of manufacturing the image sensor according to an embodiment will be described in detail with reference to the accompanying drawings. The image sensor according to the embodiment is an image sensor having a BSI structure.

Hereinafter, in describing the embodiments, detailed descriptions of related well-known functions or configurations are deemed to unnecessarily obscure the subject matter of the present invention, and thus only the essential components directly related to the technical spirit of the present invention will be referred to. .

In the description of an embodiment according to the present invention, each layer (film), region, pattern or structure may be "on" or "under" the substrate, each layer (film), region, pad or pattern. "On" and "under" include both "directly" or "indirectly" formed through another layer, as described in do. Also, the criteria for top, bottom, or bottom of each layer will be described with reference to the drawings.

2 is a side cross-sectional view schematically showing the shape of an image sensor after the first ion implantation region 116 is formed according to the embodiment.

A photodiode 114, a device isolation film 112, a transistor (not shown), and the like are formed on the semiconductor substrate 110, and a first photoresist pattern (not shown) for opening the region of the device isolation film 112 is formed. .

When the first photoresist pattern is formed, a first ion implantation process is performed using the first photoresist pattern as an ion implantation mask.

In this case, the implanted ions penetrate into the semiconductor substrate 110 through the device isolation layer 112 to a predetermined depth, and implant the first ion into the semiconductor substrate 110 under the device isolation layer 112 to a predetermined depth. Region 116 is formed.

Thereafter, the first photoresist pattern is removed.

In the above description, the first ion implantation region 116 is formed after the photodiode 114 and the transistor are formed, but the first ion implantation region 116 may be formed first.

When the first photoresist pattern is removed, a first insulating layer 120 is formed on the semiconductor substrate 110.

The first insulating layer 120 may be formed in a single layer or a multi-layered structure. The photolithography process, the etching process, the metal material embedding process, the planarization process, etc. may be performed, such as the metal wiring 122 and the contact plug (not shown). This may include.

For reference, the semiconductor substrate 110 may be a first substrate, and the first insulating layer 120 may be a second substrate on which metal wires are formed, and the first substrate and the second substrate may be bonded to each other. Can be combined.

Thereafter, the semiconductor substrate 110 and the first insulating layer 120 are inverted so that the first insulating layer 120 faces downward, and the semiconductor substrate 110 faces upward.

At this time, in order to adjust the thickness of the semiconductor substrate 110, hydrogen ions are implanted into the bottom surface of the semiconductor substrate 110 facing upward, and the layer thereon is bounded by an ion implantation layer (not shown). Can be removed (usually referred to as a "smart-cut").

3 is a side cross-sectional view schematically illustrating the shape of an image sensor after the second ion implantation region 118 is formed according to the embodiment.

Next, by applying a photoresist layer on the bottom surface of the inverted semiconductor substrate 110, by using the same mask used when forming the first photoresist pattern, a photolithography process and an etching process, etc. A photoresist pattern (not shown) is formed.

Accordingly, the second photoresist pattern may open the device isolation layer 112 in the same manner as the first photoresist pattern.

When the second photoresist pattern is formed, a second ion implantation process is performed using the second photoresist pattern as an ion implantation mask.

Accordingly, the second ion implantation region 118 is formed from the bottom of the first ion implantation region 116 to the bottom surface of the semiconductor substrate 110.

That is, the first ion implantation region 116 performs a light shielding function to the predetermined depth of the semiconductor substrate 110, and the second ion implantation region 118 is the semiconductor substrate 110 from the predetermined depth. A light shielding function is performed to the remaining depth of the semiconductor substrate, that is, to the bottom of the semiconductor substrate 110.

Therefore, the region of the semiconductor substrate 110 between the photodiodes 114 may be completely shielded.

Thereafter, the second photoresist pattern is removed.

In addition, in the second ion implantation process, different profiles such as depth, width, doping concentration, etc. of the second ion implantation region 118 may be varied by performing stepwise differentiation of ion implantation energy and ion implantation amount. Can be implemented.

In addition, the second ion implantation region 118 may be selectively formed by selectively forming the open region of the second photoresist pattern according to the type of light, that is, the light transmission coefficient. The presence or absence of the formation of the region 118 and differentiation of the profile may be selected in consideration of the kind of light (transmission coefficient).

4 is a side cross-sectional view schematically showing the shape of an image sensor after the microlens 500 is formed according to the embodiment.

Next, a second insulating layer 200 is formed on the inverted bottom surface of the semiconductor substrate 110, and the color filter layer 300, the planarization protective layer 400, and the microlens 500 are sequentially formed thereon. .

Each color filter of the color filter layer 300, for example, red / green / blue (R / G / B) color filters and the microlens 500 is formed to correspond to the area of the photodiode 114. .

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications other than those described above are possible. For example, each component specifically shown in the embodiment of the present invention can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 is a side cross-sectional view showing the structure of an image sensor of a general BSI structure.

2 is a side cross-sectional view schematically showing the shape of an image sensor after the first ion implantation region is formed according to the embodiment.

3 is a side cross-sectional view schematically illustrating the shape of an image sensor after a second ion implantation region is formed in accordance with an embodiment.

4 is a side cross-sectional view schematically showing the shape of an image sensor after the microlens is formed according to the embodiment;

Claims (11)

Forming a photodiode and a device isolation film on the semiconductor substrate, and forming a first photoresist pattern opening the device isolation film region; Forming a first ion implantation region at a predetermined depth on the semiconductor substrate under the device isolation layer through a first ion implantation process, and removing the first photoresist pattern; Forming a first insulating layer including metal wiring on the semiconductor substrate, and inverting the semiconductor substrate and the first insulating layer; Forming a second photoresist pattern on the bottom surface of the semiconductor substrate to open the device isolation layer; And And forming a second ion implantation region from a bottom of the first ion implantation region to a bottom surface of the semiconductor substrate through a second ion implantation process, and removing the second photoresist pattern. Forming a device isolation film on the semiconductor substrate, and forming a first photoresist pattern for opening the device isolation film region; After the first ion implantation process, a first ion implantation region is formed on the semiconductor substrate under the device isolation layer to a predetermined depth, and after the first photoresist pattern is removed, a photodiode is formed on the semiconductor substrate between the device isolation layers. Forming; Forming a first insulating layer including metal wiring on the semiconductor substrate, and inverting the semiconductor substrate and the first insulating layer; Forming a second photoresist pattern on the bottom surface of the semiconductor substrate to open the device isolation layer; And And forming a second ion implantation region from a bottom of the first ion implantation region to a bottom surface of the semiconductor substrate through a second ion implantation process, and removing the second photoresist pattern. The method according to claim 1 or 2, And the first photoresist pattern and the second photoresist pattern are formed using the same mask. The method according to claim 1 or 2, After the second photoresist pattern is removed, forming a second insulating layer on a bottom surface of the semiconductor substrate; Forming a color filter layer on the second insulating layer; Forming a planarization protective layer on the color filter layer; And And forming a microlens on the planarization protective layer. The method according to claim 1 or 2, In the process of performing the second ion implantation process, one or more process conditions, such as ion implantation energy and ion implantation amount, are differentiated to form a profile of the second ion implantation region according to pixels. Method of manufacturing the sensor. The method according to claim 1 or 2, And selectively forming the open region of the second photoresist pattern to form the second ion implantation region differently according to pixels. In the image sensor of the BSI structure, An isolation layer formed on the semiconductor substrate; A photodiode formed on the semiconductor substrate between the device isolation layers; A first ion implantation region formed in the semiconductor substrate under the device isolation layer to a predetermined depth; A second ion implantation region formed from below the first ion implantation region to a bottom surface of the semiconductor substrate; And An image sensor formed on the semiconductor substrate, the first sensor including a metal wiring. The method of claim 7, wherein A second insulating layer formed on the bottom surface of the semiconductor substrate while the semiconductor substrate and the first insulating layer are inverted; A color filter layer formed on the second insulating layer; A planarization protection layer formed on the color filter layer; And An image sensor comprising a microlens formed on the planarization protective layer. The method of claim 7, wherein The second ion implantation region is an image sensor, characterized in that one or more of the doping concentration, depth, width differently formed according to the pixel. The method of claim 7, wherein And wherein the second ion implantation region is formed differently according to pixels. The method of claim 7, wherein And one or more profiles of doping concentration, depth, and width are differentially formed in the first ion implantation region and the second ion implantation region.
KR1020090106300A 2009-11-05 2009-11-05 Image sensor and manufacturing method of image sensor KR20110049329A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9443892B2 (en) 2013-02-25 2016-09-13 Samsung Electronics Co., Ltd. Image sensor and method of forming the same
US9524995B2 (en) 2013-03-04 2016-12-20 Samsung Electronics Co., Ltd. Image sensors including conductive pixel separation structures

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9443892B2 (en) 2013-02-25 2016-09-13 Samsung Electronics Co., Ltd. Image sensor and method of forming the same
US9524995B2 (en) 2013-03-04 2016-12-20 Samsung Electronics Co., Ltd. Image sensors including conductive pixel separation structures
US9754994B2 (en) 2013-03-04 2017-09-05 Samsung Electronics Co., Ltd. Image sensors including conductive pixel separation structures and methods of fabricating the same
US9780142B1 (en) 2013-03-04 2017-10-03 Samsung Electronics Co., Ltd. Image sensors including conductive pixel separation structures
USRE48878E1 (en) 2013-03-04 2022-01-04 Samsung Electronics Co., Ltd. Image sensors including conductive pixel separation structures
USRE49793E1 (en) 2013-03-04 2024-01-09 Samsung Electronics Co., Ltd. Image sensors including conductive pixel separation structures

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