KR20110036376A - Solar cell and method of fabricating the same - Google Patents

Solar cell and method of fabricating the same Download PDF

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Publication number
KR20110036376A
KR20110036376A KR1020090094006A KR20090094006A KR20110036376A KR 20110036376 A KR20110036376 A KR 20110036376A KR 1020090094006 A KR1020090094006 A KR 1020090094006A KR 20090094006 A KR20090094006 A KR 20090094006A KR 20110036376 A KR20110036376 A KR 20110036376A
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South Korea
Prior art keywords
layer
electrode layer
hole
back electrode
light absorbing
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KR1020090094006A
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Korean (ko)
Inventor
임진우
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엘지이노텍 주식회사
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Priority to KR1020090094006A priority Critical patent/KR20110036376A/en
Publication of KR20110036376A publication Critical patent/KR20110036376A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

Solar cell according to the embodiment, the back electrode layer formed on the substrate; A light absorbing layer formed on the back electrode layer; A buffer layer formed on the light absorbing layer; A through hole exposing the back electrode layer through the light absorbing layer and the buffer layer; A roughness region formed on a surface of the rear electrode layer exposed by the through hole; And a front electrode layer formed on the buffer layer including the through hole to contact the roughness region.

Description

SOLAR CELL AND METHOD OF FABRICATING THE SAME

Embodiments relate to solar cells.

Recently, as energy demand increases, development of a solar cell converting solar energy into electrical energy is in progress.

In particular, CIGS-based solar cells that are pn heterojunction devices having a substrate structure including a glass substrate, a metal back electrode layer, a p-type CIGS-based light absorbing layer, a high resistance buffer layer, an n-type window layer, and the like are widely used.

In order to form such a solar cell, a mechanical patterning or laser patterning process may be performed. When the mechanical patterning process is performed, precise patterning is difficult, and defects such as adding a buffer width may occur during patterning.

Further, sidewall areas of the pattern are formed in a non-uniform form by mechanical patterning or laser patterning, and an additional effective area for patterning is required.

This increases the dead zone area of the solar cell and may be a factor of lowering the light efficiency.

The embodiment provides a solar cell and a method of manufacturing the same, which enables uniform pattern formation to reduce dead zone aeas and improve electrical efficiency.

Solar cell according to the embodiment, the back electrode layer formed on the substrate; A light absorbing layer formed on the back electrode layer; A buffer layer formed on the light absorbing layer; A through hole exposing the back electrode layer through the light absorbing layer and the buffer layer; A roughness region formed on a surface of the rear electrode layer exposed by the through hole; And a front electrode layer formed on the buffer layer including the through hole to contact the roughness region.

A method of manufacturing a solar cell according to an embodiment includes forming a back electrode layer on a substrate; Forming a light absorbing layer on the back electrode layer; Forming a buffer layer on the light absorbing layer; Forming a through hole penetrating the light absorbing layer and the buffer layer, and forming a roughness region on a surface of the back electrode layer exposed by the through hole; And forming a front electrode layer on the buffer layer such that the through hole is gap-filled.

According to the embodiment, the contact resistance characteristics of the back electrode layer used as the back contact of the CIGS light absorbing layer can be improved.

That is, a through hole for selectively exposing the back electrode layer may be formed by a sand blast process, and the intermetallic compound film on the surface of the back electrode layer may be selectively removed.

Accordingly, the contact characteristics of the back electrode layer may be improved and electrical characteristics may be improved.

Roughness may be generated on the surface of the through hole by a sand blast process.

Accordingly, the bonding force of the front electrode layer connected to the back electrode layer through the through hole may be increased.

Since the through hole is formed only in the selective region by the sand blast process, the effective area of the dead zone region of the solar cell can be reduced.

Accordingly, the active area of the solar cell can be increased, and the light efficiency can be improved.

In the description of the embodiments, where each substrate, layer, film, or electrode is described as being formed "on" or "under" of each substrate, layer, film, or electrode, etc. , "On" and "under" include both "directly" or "indirectly" formed through other components. In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

1 to 8, a solar cell and a method of manufacturing the same will be described in detail in the embodiment.

Referring to FIG. 1, a back electrode layer 200 is formed on a substrate 100.

The substrate 100 may be glass, and a ceramic substrate, a metal substrate, or a polymer substrate may also be used.

For example, soda lime glass (sodalime galss) or high strained soda glass (high strained point soda glass) may be used as the glass substrate. As the metal substrate, a substrate including stainless steel or titanium may be used. As the polymer substrate, polyimide may be used.

The substrate 100 may be transparent. The substrate 100 may be rigid or flexible.

The back electrode layer 200 may be formed of a conductor such as metal.

For example, the back electrode layer 200 may be formed by a sputtering process using molybdenum (Mo) as a target.

This is because of the high electrical conductivity of molybdenum (Mo), ohmic bonding with the light absorbing layer, and high temperature stability under Se atmosphere.

The molybdenum thin film as the back electrode layer 200 should have a low specific resistance as an electrode, and have excellent adhesion to the substrate 100 so that peeling does not occur due to a difference in thermal expansion coefficient.

Meanwhile, the material forming the back electrode layer 200 is not limited thereto, and may be formed of molybdenum (Mo) doped with sodium (Na) ions.

Although not shown in the drawing, the back electrode layer 200 may be formed of at least one layer. When the back electrode layer 200 is formed of a plurality of layers, the layers constituting the back electrode layer 200 may be formed of different materials.

A first through hole P1 is formed in the back electrode layer 200, and the back electrode layer 200 is patterned.

The first through hole P1 may selectively expose the top surface of the substrate 100.

For example, the first through hole P1 may be patterned by a mechanical device or a laser device. The width of the first through hole P1 may be 80 μm ± 20.

The back electrode layer 200 may be arranged in a stripe form or a matrix form by the first through hole P1 and may correspond to each cell.

On the other hand, the back electrode layer 200 is not limited to the above form, it may be formed in various forms.

Referring to FIG. 2, a light absorbing layer 300 is formed on the back electrode layer 200 including the first through hole P1.

The light absorbing layer 300 includes an Ib-IIIb-VIb-based compound.

In more detail, the light absorbing layer 300 includes a copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2 , CIGS-based) compound.

Alternatively, the light absorbing layer 300 may include a copper-indium selenide-based (CuInSe 2 , CIS-based) compound or a copper-gallium-selenide-based (CuGaSe 2 , CGS-based) compound.

For example, to form the light absorbing layer 300, a CIG-based metal precursor is formed on the back electrode layer 200 and the first through hole P1 by using a copper target, an indium target, and a gallium target. A film is formed.

Thereafter, the metal precursor film is reacted with selenium (Se) by a selenization process to form a CIGS-based light absorbing layer 300.

In addition, the light absorbing layer 300 may form copper, indium, gallium, selenide (Cu, In, Ga, Se) by co-evaporation.

The light absorbing layer 300 receives external light and converts the light into electrical energy. The light absorbing layer 300 generates photo electromotive force by the photoelectric effect.

Meanwhile, when the selenization process of the light absorbing layer 300 is performed, the metal elements constituting the back electrode layer 200 and the elements constituting the light absorbing layer 300 may be coupled by mutual reaction.

Accordingly, the alloy film 400, which is an intermetallic compound, may be formed on the surface of the back electrode layer 200.

For example, the alloy layer 400 may be molybdenum selenide (MoSe 2 ), which is a compound of molybdenum (Mo) and selenide (Se).

The alloy film 400 may be formed at an interface between the light absorbing layer 300 and the back electrode layer 200 to protect the surface of the back electrode layer 200.

Since the alloy layer 400 is not formed on the surface of the substrate 100 exposed through the first through hole P1, the light absorption layer 300 is gapfilled in the first through hole P1. Can be.

The alloy film 400 has a higher sheet resistance than the molybdenum thin film which is the back electrode layer 200.

Therefore, the contact resistance of the back electrode layer 200 may be increased.

Referring to FIG. 3, a buffer layer 500 and a high resistance buffer layer 600 are formed on the light absorbing layer 300.

The buffer layer 500 may be formed of at least one layer on the light absorbing layer 300. The buffer layer 500 may be formed of cadmium sulfide (CdS) by chemical bath deposition (CBD).

In this case, the buffer layer 500 is an n-type semiconductor layer, the light absorbing layer 300 is a p-type semiconductor layer. Thus, the light absorbing layer 300 and the buffer layer 500 form a pn junction.

The high resistance buffer layer 600 may be formed as a transparent electrode layer on the buffer layer 500.

For example, the high resistance buffer layer 600 may be formed of any one of ITO, ZnO, and i-ZnO.

The high resistance buffer layer 600 may be formed of a zinc oxide layer by performing a sputtering process targeting zinc oxide (ZnO).

The buffer layer 500 and the high resistance buffer layer 600 are disposed between the light absorbing layer 300 and the front electrode to be formed later.

That is, since the difference between the lattice constant and the energy band gap between the light absorbing layer 300 and the front electrode is large, the buffer layer 500 and the high resistance buffer layer 600 having a band gap in between the two materials are inserted into a good one. A junction can be formed.

Although two buffer layers 500 and 600 are formed on the light absorbing layer 300 in this embodiment, the present invention is not limited thereto, and the buffer layers may be formed as a single layer.

Referring to FIG. 4, a hard mask 10 may be formed on the high resistance buffer layer 600, and an etching process may be performed.

The hard mask 10 may include an open hole 20, and the open hole 20 may define a second through hole predetermined area.

For example, the hard mask 10 may be a metal mask formed of SUS metal, aluminum, or an alloy thereof.

After the hard mask 10 is aligned on the buffer layer 500, an etching process using the hard mask 10 as an etching mask is performed.

The etching process may use a sand blast.

This sand blasting process is a method of spraying the beads, such as sand with a spray to clean the surface of the article. As a result, impurities adhering to the surface of the article can be removed and a fine uneven surface can be formed.

In an embodiment, the second through hole P2 may be formed using the sand blast process.

For example, the sand blasting process may be performed by spraying beads of ZrO 2 , Al 2 O 3 series by compressed air. At this time, the size of the beads may be 50 ~ 100㎛.

4 and 5, a sand blast process using the hard mask 10 as an etch mask is performed, and a second through hole P2 is formed.

The second through hole P2 may pass through the high resistance buffer layer 600, the buffer layer 500, the light absorbing layer 300, and the alloy layer 400, and may expose the back electrode layer 200.

The second through hole P2 may be formed adjacent to the first through hole P1.

For example, the width of the second through hole P2 may be 80 μm ± 20 and the gap between the second through hole P2 and the first through hole P1 may be 80 μm ± 20.

The surface of the back electrode layer 200 may be exposed by the second through hole P2. That is, the alloy film 400 on the back electrode layer 200 may be removed.

Accordingly, the contact resistance of the back electrode layer 200 may be lowered.

A roughness region 210 including at least one protrusion may be formed on a surface of the back electrode layer 200 exposed by the second through hole P2.

That is, the roughness region 210 that is an uneven surface may be generated in the back electrode layer 200 by the beads during the sand blasting process.

For example, the surface roughness (RMS) of the back electrode layer 200 may be 20 to 350.

In particular, the surface roughness of the roughness region 210 may vary depending on the size of the beads and the blowing force of the compressed air during the sand blasting process.

Roughness is generated in the back electrode layer 200, and thus, the bonding force with the thin film layer contacting the back electrode layer 200 through the second through hole P2 may be increased.

Since the second through hole P2 is formed by the sand blast process, the sidewall of the second through hole P2 may have a uniform surface.

For example, the sidewalls of the second through hole P2 may be formed to have a straight line shape. The inclination θ of the sidewall of the second through hole P2 with respect to the surface of the back electrode layer 200 may be about 70 ° to about 100 °.

Since the second through hole P2 is formed by the sand blast process, the second through hole P2 may be selectively formed only in the predetermined region of the second through hole.

That is, by reducing the effective area of the second through hole P2, a dead zone area in the solar cell can be reduced.

Generally, the scribing process of the second through hole used laser or mechanical patterning. Such patterning areas by laser or mechanical processes will have non-uniform surfaces. That is, since the side surfaces of the patterning area may be severely stepped, and the side surface may have a lifting phenomenon or bur, the dead zone area may be increased.

In an embodiment, the effective area of the second through hole P2 may be reduced by a sand blast process.

Accordingly, the active region capable of generating photovoltaic power substantially in the solar cell may be expanded, thereby improving efficiency.

Thereafter, the hard mask 10 may be removed from the top of the substrate 100.

Referring to FIG. 6, a transparent conductive material is stacked on the high resistance buffer layer 600, and a front electrode layer 700 is formed.

When the front electrode layer 700 is formed, the transparent conductive material may be inserted into the second through hole P2 to form a connection wiring 800.

The connection wiring 800 may be directly connected to the back electrode layer 200 through the second through hole P2.

In particular, the connection wiring 800 may contact the roughness region 210 of the back electrode layer 200. That is, the contact area between the front electrode layer 700 and the back electrode layer 200 can be extended, and the bonding property can be improved.

Accordingly, ohmic contact between the connection wiring 800 and the back electrode layer 200 may be improved.

In particular, the mobility and conductivity of the current flowing along the surface of the back electrode layer 200 used as a back contact of the solar cell may be improved.

The front electrode layer 700 is formed of zinc oxide doped with aluminum (Al) or alumina (Al 2 O 3 ) by a sputtering process.

The front electrode layer 700 is a window layer forming a pn junction with the light absorbing layer 300. Since the front electrode layer functions as a transparent electrode on the front of a solar cell, zinc oxide (ZnO) having high light transmittance and good electrical conductivity is provided. Is formed.

Therefore, it is possible to form an electrode having a low resistance value by doping aluminum or alumina to the zinc oxide.

The zinc oxide thin film, which is the front electrode layer 700, may be formed by depositing using a ZnO target by RF sputtering, reactive sputtering by using a Zn target, and organometallic chemical vapor deposition.

In addition, a double structure in which an indium tin oxide (ITO) thin film having excellent electro-optic properties is deposited on a zinc oxide thin film may be formed.

Referring to FIG. 7, a third through hole P3 penetrating the front electrode layer 700, the high resistance buffer layer 600, the buffer layer 500, and the light absorbing layer 300 is formed.

The third through hole P3 may selectively expose the alloy layer 400. The third through hole P3 may be formed to be adjacent to the second through hole P2.

For example, the width of the third through hole P3 may be 80 μm ± 20, and the gap between the third through hole P3 and the second through hole P2 may be 80 μm ± 20.

The third through hole P3 may be formed by irradiating a laser or by a mechanical method such as a tip. Alternatively, the third through hole P3 may be formed by a sand blast process.

When the third through hole P3 is formed, the surface of the back electrode layer 200 may be protected by the alloy film 400.

That is, since the alloy film 400 is formed on the surface of the back electrode layer 200, the alloy film 400 serves as a protective layer of the back electrode layer 200, so that the third through hole P3 is formed. It is possible to prevent the back electrode layer 200 from being damaged by the patterning process.

The light absorbing layer 300, the buffer layer 500, the high resistance buffer layer 600, and the front electrode layer 700 may be separated by unit cells by the third through hole P3.

In this case, each cell may be connected to each other by the connection wiring 800. That is, the connection wiring 800 may physically and electrically connect the rear electrode layer 200 and the front electrode layer 700 of adjacent cells.

By selectively removing the intermetallic compound film formed on the surface of the back electrode layer 200 as described above, the ohmic contact property of the front electrode layer 700 may be improved.

In addition, damage to the back electrode layer 200 may be prevented by the intermetallic compound layer when the third through hole is formed.

In particular, the second through hole P2 and the third through hole P3 may be formed to have a minimum effective area by a sand blast process.

Accordingly, the dead zone area can be reduced in the unit cell, and the area of the active area can be increased.

Accordingly, the efficiency of the solar cell can be improved.

Although the above has been described with reference to the embodiments, these are merely examples and are not intended to limit the present invention. Those skilled in the art to which the present invention pertains should not be exemplified above unless they depart from the essential characteristics of the present embodiments. It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiment can be modified. And differences relating to such modifications and applications will have to be construed as being included in the scope of the invention defined in the appended claims.

1 to 7 are cross-sectional views illustrating a manufacturing process of a solar cell according to an embodiment.

Claims (10)

A back electrode layer formed on the substrate; A light absorbing layer formed on the back electrode layer; A buffer layer formed on the light absorbing layer; A through hole exposing the back electrode layer through the light absorbing layer and the buffer layer; A roughness region formed on a surface of the rear electrode layer exposed by the through hole; And And a front electrode layer formed on the buffer layer including the through hole to contact the roughness region. The method of claim 1, The solar cell further comprises an alloy film formed on the surface of the back electrode layer below the light absorbing layer. The method of claim 1, The roughness region is a solar cell including at least one protrusion. The method of claim 1, The solar cell comprising an average roughness (RMS) of the roughness region is 20 ~ 350. The method of claim 1, The slope (θ) of the side wall of the through hole with respect to the surface of the back electrode layer comprises a 70 ~ 110 °. Forming a back electrode layer on the substrate; Forming a light absorbing layer on the back electrode layer; Forming a buffer layer on the light absorbing layer; Forming a through hole penetrating the light absorbing layer and the buffer layer, and forming a roughness region on a surface of the back electrode layer exposed by the through hole; And Forming a front electrode layer on the buffer layer such that the through hole is gap-filled. The method of claim 6, When the light absorbing layer is formed, an alloy film is formed on the surface of the back electrode layer by a metal reaction between the light absorbing layer and the back electrode layer. The method of claim 6, Forming the through hole, Aligning a hard mask on top of the buffer layer to selectively expose the buffer layer; And Using the hard mask as an etching mask and selectively etching the buffer layer and the light absorbing layer to expose the back electrode layer, The etching of the through hole is a method of manufacturing a solar cell comprising a sand blasting process using a ZrO 2 or Al 2 O 3 series of beads (bead). The method of claim 6, The roughness region includes at least one protrusion, Surface roughness (RMS) of the roughness region is a manufacturing method of a solar cell comprising 20 to 350. The method of claim 6, And a slope of the sidewall of the through hole with respect to a surface of the back electrode layer is 70 to 110 °.
KR1020090094006A 2009-10-01 2009-10-01 Solar cell and method of fabricating the same KR20110036376A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013055005A1 (en) * 2011-10-13 2013-04-18 Lg Innotek Co., Ltd. Solar cell and preparing method of the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013055005A1 (en) * 2011-10-13 2013-04-18 Lg Innotek Co., Ltd. Solar cell and preparing method of the same
CN103907199A (en) * 2011-10-13 2014-07-02 Lg伊诺特有限公司 Solar cell and preparing method of the same
US9748424B2 (en) 2011-10-13 2017-08-29 Lg Innotek Co., Ltd. Solar cell and preparing method of the same

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