KR20110000338A - The crusher to make small size raw material - Google Patents
The crusher to make small size raw material Download PDFInfo
- Publication number
- KR20110000338A KR20110000338A KR1020090057783A KR20090057783A KR20110000338A KR 20110000338 A KR20110000338 A KR 20110000338A KR 1020090057783 A KR1020090057783 A KR 1020090057783A KR 20090057783 A KR20090057783 A KR 20090057783A KR 20110000338 A KR20110000338 A KR 20110000338A
- Authority
- KR
- South Korea
- Prior art keywords
- raw material
- tungsten
- striking
- crusher
- small size
- Prior art date
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- 239000002994 raw material Substances 0.000 title abstract description 20
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 10
- 239000010937 tungsten Substances 0.000 claims abstract description 10
- 238000011109 contamination Methods 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
- B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
- B02C13/00—Disintegrating by mills having rotary beater elements ; Hammer mills
- B02C13/14—Disintegrating by mills having rotary beater elements ; Hammer mills with vertical rotor shaft, e.g. combined with sifting devices
- B02C13/18—Disintegrating by mills having rotary beater elements ; Hammer mills with vertical rotor shaft, e.g. combined with sifting devices with beaters rigidly connected to the rotor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
- B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
- B02C13/00—Disintegrating by mills having rotary beater elements ; Hammer mills
- B02C13/26—Details
- B02C13/28—Shape or construction of beater elements
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B02—CRUSHING, PULVERISING, OR DISINTEGRATING; PREPARATORY TREATMENT OF GRAIN FOR MILLING
- B02C—CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL; MILLING GRAIN
- B02C25/00—Control arrangements specially adapted for crushing or disintegrating
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/12—Ferrous alloys, e.g. steel alloys containing tungsten, tantalum, molybdenum, vanadium, or niobium
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/007—Apparatus for preparing, pre-treating the source material to be used for crystal growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Food Science & Technology (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crushing And Pulverization Processes (AREA)
Abstract
Description
본 발명은 고순도의 원료를 작은 덩어리로 부수는 원료 준비과정에서 소수 인원으로 많은 양의 원료를 빠르게 처리하면서도 잉곳 특성에 영향을 주는 불순물 오염을 방지하는 자동 파쇄 기계에 관한 것이다.The present invention relates to an automatic shredding machine that prevents impurity contamination affecting ingot characteristics while rapidly processing a large amount of raw materials with a small number of people in the preparation process of breaking down high purity raw materials into small chunks.
실리콘 잉곳 성장장치 내부에는 원료의 안착 및 열적 조건을 담당하는 그라파이트가 있는데, 이 그라파이트 안에 원료가 실제 장입이 되는 도가니가 장착이 된다. 잉곳 생산량이 많아지기 위해서는 최대한 원료가 많이 장입이 되어야 하는데 이 때문에 내부 공간이 한정된 도가니 안에 원료를 많이 장입하기 위해서 잘게 부수는 공정을 진행 한다. 기존에 사용되는 파쇄기계의 경우 철, 스텐레스 스틸이 사용 되었는데 원료가 파쇄 되면서 긁히거나 손상이 되면서 소량 원료에 섞이게 되면 잉곳의 고유 특성과 단결정 성장에 치명적인 영향을 주기 때문에 사용 할 수가 없다. 이러한 이유로 인해 수작업으로 파쇄 작업을 진행한다. Inside the silicon ingot growth apparatus, there is graphite that is responsible for the raw material's settling and thermal conditions. The crucible where the raw material is actually charged is mounted. In order to increase the production of ingots, the raw materials should be loaded as much as possible. Therefore, in order to load a large amount of raw materials into a crucible with limited internal space, a crushing process is performed. In the conventional crushing machine, iron and stainless steel are used, but when they are mixed with small amount of raw materials as they are scratched or damaged as they are broken, they cannot be used because they have a fatal effect on the ingot's inherent properties and single crystal growth. For this reason, crushing is performed manually.
본 파쇄 기계는 수작업으로 진행되는 파쇄 작업을 원료의 오염을 방지하면서 자동으로 처리하는 것을 목적으로 한다.This shredding machine aims to automatically handle the manual shredding operation while preventing contamination of raw materials.
기존의 파쇄 기계와는 달리 하향 타격식으로 행정하는 방식을 고안 하였으며 원료와 닿는 부분과 실제 타격되는 부분을 텅스텐으로 처리한다. 텅스텐의 사용 이유는 텅스텐의 융점은 약 3400도로 원료의 융점 1414도 보다 상대적으로 높기 때문에 공정 온도에서는 액화되지 않아 원료와 반응을 하지 않기 때문이다. 많은 양을 처리하기 위해서 타격부분을 이동식으로 구성하였다.Unlike conventional crushing machines, it devised a downward stroke stroke method and treated tungsten with the part that touches the raw material and the part that is actually hit. The reason for the use of tungsten is that the melting point of tungsten is about 3400 degrees and is relatively higher than the melting point of 1414 degrees of the raw material, so it is not liquefied at the process temperature and does not react with the raw material. The striking part is movable to handle a large amount.
본 발명은 수작업으로 진행되는 파쇄 작업을 자동화시킴으로써 그에 따른 인력감소 효과와 생산량을 증가 시킬 수 있다.The present invention can increase the manpower reduction effect and yield by automating the manual crushing operation.
파쇄 기계는 타격부와 몸체부 두 부분으로 구성이 된다. 타격부는 상하 운동을 하면서 원료를 타격하여 부순다. 이때 원료와 맞닿는 파쇄공구 부분을 산모양의 텅스텐으로 제작하여 집중 하중을 받게 한다. 타격부에 전후 이동이 가능하도록 제작하여 지역적인 타격이 가능하게 한다. 다음으로 몸체부는 원료가 놓여지는 부분으로 바닥과 벽부분을 텅스텐으로 구성한다. 특히 바닥부분은 타격시 발생되는 충격에 견딜 수 있도록 텅스텐 두께를 두껍게 해야 한다. 파쇄가 완료되면 한쪽 바닥 면이 아래로 내려가면서 원료가 다른 상자에 이동되도록 시키도록 설계한다.The shredding machine consists of two parts: the striking part and the body part. The blower breaks up by hitting the raw material while moving up and down. At this time, the part of the crushing tool which is in contact with the raw material is made of tungsten in the shape of acid to receive the concentrated load. Produced to be able to move back and forth in the hitting part to enable local hitting. Next, the body is the part where the raw material is placed, and the bottom and the wall are made of tungsten. In particular, the bottom part should have a thick tungsten thickness to withstand the impact of the impact. When the shredding is complete, it is designed to allow the bottom side to move down and the material to be transferred to the other box.
도 1) 파쇄기계의 정면도와 측면도1) Front and side views of a crushing machine
도 2) 파쇄 기계의 공정 단계 소개2) Introduction to the process steps of the shredding machine
<도면에서 기호 설명 ><Description of Symbols in Drawings>
(1) 타격부 (2) 몸체부(1) Strike (2) Body
(3) 파쇄공구 (4) 원료통(3) Shredding Tools (4) Raw Material Containers
(5) 원료(5) raw material
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090057783A KR20110000338A (en) | 2009-06-26 | 2009-06-26 | The crusher to make small size raw material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090057783A KR20110000338A (en) | 2009-06-26 | 2009-06-26 | The crusher to make small size raw material |
Publications (1)
Publication Number | Publication Date |
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KR20110000338A true KR20110000338A (en) | 2011-01-03 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020090057783A KR20110000338A (en) | 2009-06-26 | 2009-06-26 | The crusher to make small size raw material |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USD761278S1 (en) | 2015-02-06 | 2016-07-12 | Samsung Electronics Co., Ltd. | Display screen or portion thereof with animated graphical user interface |
KR20160099514A (en) | 2016-08-04 | 2016-08-22 | 김주한 | Payment ASP System and Methods using a mobile communication terminal |
US9586210B2 (en) | 2012-08-01 | 2017-03-07 | Wacker Chemie Ag | Apparatus and method for comminuting a polycrystalline silicon rod |
US10005614B2 (en) | 2016-02-25 | 2018-06-26 | Hemlock Semiconductor Operations Llc | Surface conditioning of conveyor materials or contact surfaces |
-
2009
- 2009-06-26 KR KR1020090057783A patent/KR20110000338A/en not_active Application Discontinuation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9586210B2 (en) | 2012-08-01 | 2017-03-07 | Wacker Chemie Ag | Apparatus and method for comminuting a polycrystalline silicon rod |
USD761278S1 (en) | 2015-02-06 | 2016-07-12 | Samsung Electronics Co., Ltd. | Display screen or portion thereof with animated graphical user interface |
US10005614B2 (en) | 2016-02-25 | 2018-06-26 | Hemlock Semiconductor Operations Llc | Surface conditioning of conveyor materials or contact surfaces |
KR20160099514A (en) | 2016-08-04 | 2016-08-22 | 김주한 | Payment ASP System and Methods using a mobile communication terminal |
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