KR20100124019A - One of flexlble display organic light emitting display panel and method of manufacturing the same - Google Patents

One of flexlble display organic light emitting display panel and method of manufacturing the same Download PDF

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KR20100124019A
KR20100124019A KR1020090043048A KR20090043048A KR20100124019A KR 20100124019 A KR20100124019 A KR 20100124019A KR 1020090043048 A KR1020090043048 A KR 1020090043048A KR 20090043048 A KR20090043048 A KR 20090043048A KR 20100124019 A KR20100124019 A KR 20100124019A
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moisture barrier
gas
sinx
seconds
manufacturing
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구송림
김경민
송갑득
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주식회사 동아테크윈
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

PURPOSE: A flexible OLED display manufacturing method is provided to effectively prevent vapor permeability than SiNx vapor permeability prevention film with a conventional PECVD method by laminating and depositing a PEALD method. CONSTITUTION: An ITO is formed on a glass or a plastic substrate. A pattern is formed in order to form an organic compound on an ITO substrate. An organic compound and a cathode(20) are deposited on the pattern. SiNx/Al2O3/SiNX is deposited on a planarization layer(40) with a second vapor permeability prevention film.

Description

플렉시블 오엘이디 디스플레이 제조방법{ONE OF FLEXLBLE DISPLAY ORGANIC LIGHT EMITTING DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME}ONE OF FLEXLBLE DISPLAY ORGANIC LIGHT EMITTING DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME}

본 발명은 플렉시블 OLED 디스플레이 제조방법에 관한 것으로, 상세하게는 스탭커버리지(STEPCOVERAGE)가 우수하고 투습 억제 효과가 우수한 SiNx과 SiO2 박막을 라미네이트(Laminate) 박막으로 형성하되 PEALD(Atomic Layer Deposition)법으로 적층 증착함으로써 기존의 PECVD법으로 증착하는 SiNx 투습 방지막보다 투습 억제 효과가 크게 향상되도록 한 것이다.The present invention relates to a method of manufacturing a flexible OLED display, and in detail, a SiNx and SiO 2 thin film having excellent step coverage (STEPCOVERAGE) and an excellent moisture permeation inhibiting effect are formed as a laminate thin film, but using PEALD (Atomic Layer Deposition) method. By laminating deposition, the effect of inhibiting moisture permeability is significantly improved compared to the SiNx moisture barrier film deposited by the conventional PECVD method.

현재 유기전계 발광 소자 제조시 수분 및 산소 등의 외부 불순물이 소자 내부로 침투하여 발광면적의 수축을 방지하기 위해 흡습제(desiccant) 및 캔(sus Can)을 사용하여 외부 침투를 방지하고 있다. 하지만 캔(Can)을 사용할 경우 소자의 두께가 두꺼워지고, 원가가 비싸지며 글라스(Glass)를 접착할 때 사용하는 밀봉제(Sealant)로부터 이 물질이 발생하여 소자의 유기층에 큰 손상을 준다는 보고도 있다. At present, in the manufacturing of the organic light emitting device, external impurities such as moisture and oxygen penetrate into the device to prevent external penetration by using a desiccant and a sus can to prevent shrinkage of the light emitting area. However, it is reported that the use of Can increases the thickness of the device, the cost is high, and the material is generated from the sealant used to bond the glass, which causes great damage to the organic layer of the device. have.

또한 대면적 및 플렉시블(flexible) 기판을 사용하는 경우 캔(Can)을 사용하기는 어려움이 있다. 이러한 문제를 해결하기 위해 현재 캔(Can)을 사용하지 않고 Thin Film 박막을 사용하는 연구가 활발히 진행되고 있다. Thin Film 박막을 사용 할 경우 외부의 수분이나 산소의 침투를 방지하는 것이 중요하다. In addition, when using a large area and a flexible substrate (Can) it is difficult to use Can. In order to solve this problem, studies are being actively conducted using thin film thin films without using cans. Thin Film When using a thin film, it is important to prevent the penetration of moisture or oxygen from the outside.

그중 캐소드(Cathode) 증착 후, 사용되는 SiNx 박막은 유기층을 보호할 뿐만 아니라 투습 방지에도 큰 기여를 한다. 현재 SiNx 형성 방법으로 사용되는 PECVD(Plasma Enhanced Chemical Vapor Deposition)법은 증착속도는 매우 빠른 반면 스탭커버리지(Stepcoverage)가 불량하고 단일막으로는 외부에서 침투하는 수분을 방지하는데 있어 효과적이지 못한 문제점이 있다.Among them, the SiNx thin film used after cathode deposition not only protects the organic layer but also contributes to prevention of moisture permeation. Plasma Enhanced Chemical Vapor Deposition (PECVD), which is currently used as a SiNx forming method, has very high deposition rate but poor step coverage and is ineffective in preventing external moisture from penetrating into a single layer. .

본 발명은 스텝커버리지(STEPCOVERAGE)가 우수하고 투습 억제가 우수한 SiNx과 SiO2 박막을 라미네이트(Laminate) 박막으로 형성하여 투습 방지막을 형성하되 PEALD(Atomic Layer Deposition)법으로 적층 및 증착함으로써 보다 효과적인 투습이 방지되도록 한 플렉시블 OLED 디스플레이 제조방법을 제공함에 목적이 있다.The present invention forms a moisture-permeable membrane by forming a thin film of SiNx and SiO 2 with excellent step coverage and excellent moisture permeation suppression as a laminate thin film, but stacking and depositing by PEALD (Atomic Layer Deposition) method for more effective moisture permeation. It is an object of the present invention to provide a method of manufacturing a flexible OLED display which is prevented.

본 발명 플렉시블 OLED 디스플레이 제조방법은, 글라스(Glass) 위에 ITO와 유기층 및 캐소드(Cathode)가 증착되는 공정과, 유기물 보호 및 투습 방지하기 위해 제1 투습 방지막인 SiNx와 SiO2 박막을 ALD법으로 라미네이트(Laminate) 구조로 증착하는 공정과, 평탄화 층으로 광경화 수지를 도포하고 자외선(UV)으로 경화하는 공정과, 제2 투습 방지막으로 SiNx/Al2O3/SiNx를 형성하는 공정과, 소자 보호를 위해 다시 광경화 수지를 도포하고 UV로 경화시키는 공정을 포함한다.According to the present invention, a method of manufacturing a flexible OLED display includes a process of depositing ITO, an organic layer, and a cathode on glass, and laminating SiNx and SiO 2 thin films, which are first moisture barrier films, to protect organic materials and prevent moisture permeation by ALD. A process of depositing with a laminate structure, applying a photocurable resin with a planarization layer, curing with ultraviolet (UV), forming a SiNx / Al 2 O 3 / SiNx with a second moisture barrier film, and protecting the device For applying the photocurable resin again and curing with UV.

또한 본 발명은, ITO에 유기물을 증착하기 위해 패턴(Pattern)을 형성하는 것과, 상기 패턴 위에 유기물 증착을 HIL/HTL/EML/ETL/EIL 순서대로 증착하는 것을 그 특징으로 한다.In addition, the present invention is characterized in that to form a pattern (Pattern) for depositing the organic material on the ITO, and to deposit the organic material deposition on the pattern in the order of HIL / HTL / EML / ETL / EIL.

또한 본 발명은, 상기 유기물 위에 캐소드(Cathode)인 Al 증착하는 것을 그 특징으로 한다,In another aspect, the present invention, characterized in that the deposition of Al as a cathode (Cathode) on the organic material,

또한 본 발명은, 유기물 보호 및 투습 방지막인 제1 투습 방지막으로 SiNx와 SiO2를 PEALD을 이용하여 라미네이트(Laminate) 구조로 증착하는 것을 그 특징으로 한다.In addition, the present invention is characterized by depositing SiNx and SiO 2 in a laminate structure using PEALD as the first moisture barrier film, which is an organic material protection and moisture barrier film.

또한 본 발명은, 제1 투습 방지막을 구성하는 SiNx 및 SiOX 박막 증착은, 반응로의 압력을 0.1torr ~ 2torr로 유지하고, SiH2Cl2 가스를 0.1초 ~ 10초 동안 플 로우(Flow) 하고, 미반응 가스를 제거하기 위해 N2 가스로 0.2초 ~ 10초간 퍼지(Purge) 하고, NH3 가스에 플라즈마 여기시에 RF 파워를 30Watt ~ 200Watt로 유지하여 1초 ~ 10초간 처리하고, 다시 미반응 가스를 제거하기 위해 N2 가스로 0.2초 ~ 10초간 퍼지(Purge) 하고, 반응로의 압력은 0.1torr ~ 2torr로 유지하고, SiH2Cl2 가스를 0.1초 ~ 10초 동안 플로우(Flow)하고, 미반응 가스를 제거하기 위해 N2 가스로 0.2초 ~ 10초간 퍼지(Purge) 하고, O2 가스에 플라즈마 여기시 RF 파워를 30Watt~200Watt로 유지시켜 1초 ~ 10초간 플로우(Flow)하고, 다시 미반응 가스를 제거하기 위해 N2 가스로 0.2초 ~ 10초간 퍼지(Purge) 하는 것을 특징으로 한다. In addition, the present invention, SiNx and SiO X thin film deposition constituting the first moisture barrier film, the pressure of the reactor is maintained at 0.1torr ~ 2torr, the SiH 2 Cl 2 gas flow for 0.1 seconds to 10 seconds In order to remove the unreacted gas, purge with N 2 gas for 0.2 seconds to 10 seconds, and maintain RF power at 30 Watts to 200 Watts during plasma excitation to NH 3 gas for 1 second to 10 seconds, and again. To remove unreacted gas, purge with N 2 gas for 0.2 seconds to 10 seconds, maintain reactor pressure between 0.1torr and 2torr, and flow SiH 2 Cl 2 gas for 0.1 seconds to 10 seconds. Purge with N 2 gas to remove unreacted gas for 0.2 seconds to 10 seconds, and maintain RF power at 30 Watts to 200 Watts when plasma is excited with O 2 gas for 1 second to 10 seconds. And, in order to remove the unreacted gas again, characterized in that the purge (Purge) for 0.2 seconds to 10 seconds with N 2 gas.

또한 본 발명은, 제1 투습 방지막을 원하는 두께로 얻기 위해 상기 과정을 반복적으로 실시하는 것을 특징으로 한다.In addition, the present invention is characterized by repeatedly performing the above process to obtain a first moisture barrier film to a desired thickness.

또한 본 발명은, 상기 SiH2Cl2 가스 대신 SiH4, (CH3)4Si, Si[N(CH3)]3H를 사용하는 것을 특징으로 한다.In addition, the present invention is characterized by using SiH 4 , (CH 3 ) 4 Si, Si [N (CH 3 )] 3 H instead of the SiH 2 Cl 2 gas.

또한 본 발명은, 제1 투습 방지막 증착 후, 평탄화 층(Planarization Layer)으로 광경화 수지(Urethan,epoxy)를 스핀 코터(Spin Coator)나 스크린 프린터(Screen Printer)로 도포하는 것을 그 특징으로 한다.In addition, the present invention is characterized in that after the deposition of the first moisture barrier film, the photocurable resin (Urethan, epoxy) is coated with a spin coater or a screen printer as a planarization layer.

또한 본 발명은, 제2 투습 방지막으로 SiNx, Al2O3, SiNx를 순서대로 증착하는 것을 그 특징으로 한다.In addition, the present invention is the liquid and in that said depositing a SiNx, Al 2 O 3, SiNx in the order of 2 the moisture permeable film.

또한 본 발명은, 제2 투습 방지막 증착 후 소자 보호막으로 광경화 수지를 스핀 코터(Spin Coator)나 스크린 프린터(Screen Printer)로 도포하는 것을 그 특징으로 한다.In addition, the present invention is characterized in that the photocurable resin is applied by a spin coater or a screen printer to the device protective film after the deposition of the second moisture barrier film.

또한 본 발명은, 광경화 수지는 자외선(UV)으로 경화시키는 것을 그 특징으로 한다.In addition, the present invention is characterized in that the photocurable resin is cured by ultraviolet (UV) light.

또한 본 발명은, PEALD 증착 방법 대신 플라즈마(Plasma)를 사용하지 않은 ALD 방법으로 증착하는 것을 그 특징으로 한다.In addition, the present invention is characterized in that the deposition by the ALD method that does not use plasma (Plasma) instead of the PEALD deposition method.

또한 본 발명은, 유기물 보호 및 투습 방지막으로 라미네이트(Laminate) 박막이 아닌 각각 단일막으로 사용하는 것을 그 특징으로 한다. In addition, the present invention is characterized in that it is used as a single film instead of a laminate thin film as an organic material protection and moisture barrier film.

또한 본 발명은, SiNx 및 SiOx 박막을 유기물 투습 방지가 아닌 플라스틱(Plastic) 기판의 투습 방지막으로 사용하는 것을 그 특징으로 한다. 플라스틱(Plastic)은 디스플레이에 사용되는 모든 것을 특징으로 한다.In addition, the present invention is characterized in that the SiNx and SiOx thin film is used as a moisture barrier film of a plastic substrate rather than an organic moisture barrier. Plastic features everything used for displays.

또한 본 발명은, 플라즈마(Plasma) 여기 방식을 Remoto Plasma 방식으로 사용하는 것을 그 특징으로 한다.In addition, the present invention is characterized by using a plasma (Plasma) excitation method in the Remoto Plasma method.

또한 본 발명은, 제2 투습 방지막으로 SiNx(질화규소) 대신 SiOx(산화규소)를 사용하는 것을 그 특징으로 한다. 또한 Al2O3 대신 Al을 사용하는 것을 특징으로 한다.In addition, the present invention is characterized by using SiOx (silicon oxide) instead of SiNx (silicon nitride) as the second moisture barrier film. Also, Al is used instead of Al 2 O 3 .

본 발명은 스탭커버리지(STEPCOVERAGE)가 우수하고 투습 억제 효과가 우수한 SiNx과 SiO2 박막을 라미네이트(Laminate) 박막으로 형성하되 PEALD(Atomic Layer Deposition)법으로 적층 증착함으로써 기존의 PECVD법으로 증착하는 SiNx 투습 방지막보다 효과적으로 투습이 억제되는 매우 유용한 발명이다.The present invention forms SiNx and SiO 2 thin films having excellent STEPCOVERAGE and excellent moisture permeation suppression effect as a laminate thin film, but are laminated by PEALD (Atomic Layer Deposition) method to deposit SiNx moisture vapor by conventional PECVD method. It is a very useful invention that moisture permeation is more effectively suppressed than the prevention film.

이하, 본 발명의 바람직한 실시 예들을 첨부한 도면에 따라 상세히 설명하고자 한다. 본 발명의 실시 예들을 설명함에 있어 도면들 중 동일한 구성 요소들은 가능한 한 동일 부호로 기재하고, 관련된 공지구성이나 기능에 대한 구체적인 설명은 본 발명의 요지가 모호해지지 않도록 생략한다.Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In describing the embodiments of the present invention, the same components in the drawings are denoted by the same reference numerals as much as possible, and detailed descriptions of related known configurations or functions will be omitted so as not to obscure the subject matter of the present invention.

본 발명을 구현하기 위한 SiNx 및 SiO2 박막 형성은 다음과 같다.SiNx and SiO 2 thin film formation for implementing the present invention is as follows.

글라스(Glass) 또는 플라스틱(Plastic) 기판 위에 ITO가 형성된 ITO기판(10) 준비단계;Preparing an ITO substrate 10 having ITO formed on a glass or plastic substrate;

상기 ITO기판(10) 위에 유기물 형성을 위하여 패턴(Isolation 및 Separator)을 형성하는 단계;Forming a pattern (Isolation and Separator) on the ITO substrate 10 to form an organic material;

상기 패턴 위에 유기물 및 캐소드(20)를 증착하는 단계; Depositing an organic material and a cathode (20) over the pattern;

상기 유기물 및 캐소드(20) 위에 유기물 보호 및 투습 방지를 위해 제1 투습 방지막(30)으로 라미네이트(Laminate) 증착 단계;Depositing a laminate on the organic material and the cathode 20 with a first moisture barrier film 30 to protect the organic material and prevent moisture permeation;

상기 제1 투습 방지막(30) 위에 평탄화 층(Planarization Layer)(40)인 광경화 수지를 스핀코터(Spin Coator)나 스크린 프린터(Screen Printer)로 도포한 후 자외선(UV)으로 경화시키는 단계; Coating the photocurable resin, which is a planarization layer 40, on a surface of the first moisture barrier layer 30 with a spin coater or a screen printer and curing the same with ultraviolet light (UV);

상기 평탄화 층(Planarization Layer)(40) 위에 제2 투습 방지막으로 SiNx/Al2O3/SiNX를 증착하는 단계; Depositing SiNx / Al 2 O 3 / SiN X on the planarization layer 40 as a second moisture barrier layer;

상기 제2 투습 방지막 위에 광경화 수지를 스핀코터(Spin Coator)나 스크린 프린터(Screen Printer)로 도포한 후 자외선(UV)으로 경화시키는 보호층(80)을 형성 단계; 로 된다.Forming a protective layer 80 on which the photocurable resin is coated on the second moisture barrier layer by a spin coater or a screen printer and then cured with ultraviolet rays (UV); .

상기 유기물은 정공 주입층(HIL)/정공 수송층(HTL)/발광층(EML)/전자 수송층(ETL)/전자주입층(EIL)이 차례로 증착되어 층구조를 가지며, 그 상부에 캐소드(Cathode)가 증착된다. 상기 캐소드는 원할한 전자 공급을 위하여 일함수가 낮은 금속, 예컨대 Al 금속막 등이 사용된다.The organic material has a layer structure in which a hole injection layer (HIL), a hole transport layer (HTL), a light emitting layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL) are sequentially deposited, and a cathode is formed thereon. Is deposited. For the cathode, a metal having a low work function, such as an Al metal film, is used for smooth electron supply.

본 발명에서 제1 투습 방지막(30)인 SiNx와 SiO2를 PEALD법으로 라미네이트(Laminate) 증착하는 방법은 다음과 같다.In the present invention, a method of laminating a SiNx and SiO 2 as the first moisture barrier layer 30 by PEALD method is as follows.

먼저, SiNx 증착 방법으로,First, SiNx deposition method,

a). SiH2Cl2 가스를 0.1초 ~ 10초 동안 증착한다.a). SiH 2 Cl 2 gas is deposited for 0.1-10 seconds.

b). 미반응 가스를 제거하기 위해 N2 가스로 0.2초 ~ 10초간 퍼지(Purge)한 다.b). Purge for 0.2 seconds to 10 seconds with N 2 gas to remove unreacted gas.

c). NH3 가스에 플라즈마 여기시 RF 파워를 30Watt ~ 200Watt로 유지시켜 0. 2초 ~ 10초간 처리하고, c). When plasma excitation to NH 3 gas, RF power is maintained at 30Watt ~ 200Watt and treated for 0.2 second ~ 10 seconds,

d). 다시 미반응 가스를 제거하기 위해 N2 가스로 0.2초 ~ 10초간 퍼지(Purge)하고, d). To purge the unreacted gas again, purge with N 2 gas for 0.2 seconds to 10 seconds,

e). 반응로의 압력은 0.1torr ~ 2torr로 유지하는 조건으로 SiNx을 증착한다.e). SiNx is deposited under the condition that the pressure of the reactor is maintained at 0.1torr ~ 2torr.

이어서 SiO2 증착 방법으로,Then SiO 2 deposition method,

a). SiH2Cl2 가스를 0.1초 ~ 10초 동안 플로우(Flow)시킨다.a). SiH 2 Cl 2 gas is flowed for 0.1 seconds to 10 seconds.

b). 미반응 가스를 제거하기 위해 N2 가스로 0.2초 ~ 10초간 퍼지(Purge)한다.b). Purge for 0.2 to 10 seconds with N 2 gas to remove unreacted gas.

c). O2가스를 플라즈마 여기시 RF 파워를 30Watt ~ 200Watt로 유지한 후 0.1초 ~ 10초 동안 플로우(Flow)시킨다.c). When an O 2 gas plasma excitation causes the flow (Flow) for 0.1 second ~ 10 seconds and keeping the RF power at 30Watt ~ 200Watt.

d). 다시 미반응 가스를 제거하기 위해 N2 가스로 0.2초 ~ 10초간 퍼지(Purge) 한다.d). N 2 to remove unreacted gas again Purge 0.2 ~ 10 seconds with gas.

e). 반응로의 압력은 0.1torr ~ 2torr로 유지하는 조건으로 SiO2를 증착한다.e). SiO 2 is deposited under the condition that the pressure of the reactor is maintained at 0.1 to 2 tor.

본 발명에서, 제1 투습 방지막(30)의 원하는 두께를 얻기 위해 상기 SiNx 증착과, SiO2 증착을 연속해서 반복적으로 실시한다.In the present invention, in order to obtain a desired thickness of the first moisture barrier film 30, the SiNx deposition and the SiO 2 deposition are successively repeated.

본 발명에서, 상기 SiH2Cl2 가스 대신 SiH4, (CH3)4Si, Si[N(CH3)]3H를 사용할 수 있다.In the present invention, SiH 4 , (CH 3 ) 4 Si, Si [N (CH 3 )] 3 H may be used instead of the SiH 2 Cl 2 gas.

본 발명에서, 제2 투습 방지막은 SiNx, Al2O3, SiNx가 순서대로 증착된다.In the present invention, the second moisture barrier film is deposited with SiNx, Al 2 O 3 , and SiNx in that order.

본 발명에서, 평탄화 층(Planarization Layer)(40)과, 보호층(80)은 광경화 수지를 스핀 코터(Spin Coator)나 스크린 프린터(Screen Printer)로 도포한 후 자외선(UV)으로 경화시킨다.In the present invention, the planarization layer 40 and the protective layer 80 apply a photocurable resin to a spin coater or a screen printer and then cure it with ultraviolet (UV) light.

본 발명에서, PEALD 증착 방법 대신 플라즈마(Plasma)를 사용하지 않은 ALD 방법으로 증착할 수 있다.In the present invention, instead of the PEALD deposition method may be deposited by an ALD method that does not use a plasma (Plasma).

본 발명에서, 유기물 보호 및 투습 방지막으로 라미네이트(Laminate) 박막이 아닌 각각 단일막으로 사용할 수 있다.In the present invention, the organic material protection and moisture permeation prevention film may be used as a single film instead of a laminate thin film.

본 발명에서, SiNx 및 SiOx 박막을 유기물 투습 방지가 아닌 플라스틱(Plastic) 기판의 투습 방지막으로 사용할 수 있으며, 플라스틱(Plastic)은 디스플레이에 사용되는 모든 것을 특징으로 한다.In the present invention, the SiNx and SiOx thin films may be used as a moisture barrier film of a plastic substrate, rather than an organic moisture barrier, and the plastic is characterized in that all are used for a display.

본 발명에서, 플라즈마(Plasma) 여기 방식을 Remoto Plasma 방식으로 사용할 수 있다.In the present invention, the plasma (Plasma) excitation method can be used as the Remoto Plasma method.

본 발명에서, 제2 투습 방지막으로 SiNx(질화규소) 대신 SiOx(산화규소)를 사용할 수 있으며, 또한 Al2O3 대신 Al을 사용할 수 있다.In the present invention, as the second moisture barrier film, SiOx (silicon oxide) may be used instead of SiNx (silicon nitride), and Al may be used instead of Al 2 O 3 .

본 박막의 증착 방법은 플라스틱을 기판을 사용하는 모든 디스플레이에 사용 할 수 있으며, 특히 플라스틱 기판의 투습 방지막인 경우 앞면 및 뒷면에 사용할 수 있다.The thin film deposition method can be used for all displays using a plastic substrate, especially in the case of the moisture barrier film of the plastic substrate can be used on the front and back.

이상과 같이 설명한 본 발명은 본 실시 예 및 첨부된 도면에 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위내에서 여러가지 치환, 변형 및 변경이 가능하며, 이는 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 있어 자명한 것이다.The present invention as described above is not limited to the present embodiment and the accompanying drawings, various substitutions, modifications and changes are possible within the scope without departing from the technical spirit of the present invention, which is usually in the art It is self-evident for those who have knowledge.

도 1 : 본 발명에서 ITO기판 위에 유기물 및 캐소드가 증착된 상태1 is a state in which an organic material and a cathode are deposited on an ITO substrate in the present invention

도 2 : 본 발명에서 유기물 및 캐소드 위에 제1 투습 방지막이 증착된 상태2 is a state in which the first moisture barrier film is deposited on the organic material and the cathode in the present invention

도 3 : 본 발명에서 제1 투습 방지막 위에 평탄화 층이 형성된 상태3: a planarization layer is formed on the first moisture barrier film in the present invention

도 4 : 본 발명에서 평탄화 층 위에 제2 투습 방지막이 증착된 상태4: a state in which the second moisture barrier film is deposited on the planarization layer in the present invention

도 5 : 본 발명에서 제2 투습 방지막 위에 보호층이 형성된 상태5: In the present invention, a protective layer is formed on the second moisture barrier film

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

(10)--ITO 기판(10)-ITO Board

(20)--유기물 및 캐소드(20)-organic and cathode

(30)--제1 투습 방지막(30)-first moisture barrier

(40)--평탄화 층40--flattening layer

(50)--제2 투습 방지막의 SiNx 박막층(50)-SiNx thin film layer of second moisture barrier

(60)--제2 투습 방지막의 Al2O3 박막층(60)-Al 2 O 3 of the second moisture barrier Thin film layer

(70)--제2 투습 방지막의 SiNx 박막층(70)-SiNx thin film layer of second moisture barrier

(80)--보호층(80)-protective layer

Claims (8)

플렉시블 OLED 디스플레이 제조방법에 있어서;A method of manufacturing a flexible OLED display; ITO기판 준비단계;ITO substrate preparation step; 상기 ITO기판 위에 유기물 형성을 위하여 패턴을 형성하는 단계;Forming a pattern on the ITO substrate to form an organic material; 상기 패턴 위에 유기물 및 캐소드를 증착하는 단계; Depositing an organic material and a cathode on the pattern; 상기 유기물 및 캐소드 위에 제1 투습 방지막으로 라미네이트(Laminate) 박막을 증착하는 단계;Depositing a laminate thin film on the organic material and the cathode as a first moisture barrier layer; 상기 제1 투습 방지막 위에 평탄화 층으로 광경화 수지를 도포한 후 자외선(UV)으로 경화시키는 단계; Applying a photocuring resin to the first moisture barrier layer as a planarization layer and curing the same with ultraviolet (UV) light; 상기 평탄화 층 위에 제2 투습 방지막으로 SiNx/Al2O3/SiNX를 증착하는 단계; Depositing SiNx / Al 2 O 3 / SiN X on the planarization layer as a second moisture barrier layer; 상기 제2 투습 방지막 위에 광경화 수지를 도포한 후 자외선(UV)으로 경화시키는 보호층을 형성하는 단계; Forming a protective layer on the second moisture barrier layer by applying a photocurable resin and then curing it with ultraviolet rays (UV); 로 된 플렉시블 OLED 디스플레이 제조방법.Flexible OLED Display Manufacturing Method. 청구항 1에 있어서;The method according to claim 1; 제1 투습 방지막인 SiNx와 SiO2를 PEALD법으로 라미네이트(Laminate)박막을 증착하는 방법, A method of depositing a laminate thin film using a PEALD method of SiNx and SiO 2 , which are first moisture barrier films, 먼저, SiNx 증착 방법으로,First, SiNx deposition method, a). SiH2Cl2 가스를 0.1초 ~ 10초 동안 증착하고,a). SiH 2 Cl 2 gas is deposited for 0.1 to 10 seconds, b). 미반응 가스를 제거하기 위해 N2 가스로 0.2초 ~ 10초간 퍼지(Purge)하고,b). Purge 0.2 to 10 seconds with N 2 gas to remove unreacted gas, c). NH3 가스에 플라즈마 여기시 RF 파워를 30Watt ~ 200Watt로 유지시켜 0. 2초 ~ 10초간 처리하고, c). When plasma excitation to NH 3 gas, RF power is maintained at 30Watt ~ 200Watt and treated for 0.2 second ~ 10 seconds, d). 다시 미반응 가스를 제거하기 위해 N2 가스로 0.2초 ~ 10초간 퍼지(Purge)하고, d). To purge the unreacted gas again, purge with N 2 gas for 0.2 seconds to 10 seconds, e). 반응로의 압력은 0.1torr ~ 2torr로 유지하는 조건으로 SiNx을 증착하고,e). SiNx is deposited under the condition that the pressure of the reactor is maintained at 0.1torr ~ 2torr, 이어서 SiO2 증착 방법으로,Then SiO 2 deposition method, a). SiH2Cl2 가스를 0.1초 ~ 10초 동안 플로우(Flow)시키고,a). SiH 2 Cl 2 gas was flowed for 0.1 to 10 seconds, b). 미반응 가스를 제거하기 위해 N2 가스로 0.2초 ~ 10초간 퍼지(Purge)하고,b). Purge 0.2 to 10 seconds with N 2 gas to remove unreacted gas, c). O2가스를 플라즈마 여기시 RF 파워를 30Watt ~ 200Watt로 유지한 후 0.1초 ~ 10초 동안 플로우(Flow)시키고,c). After maintaining the RF power at 30Watt ~ 200Watt during plasma excitation, the O 2 gas was flowed for 0.1 to 10 seconds, d). 다시 미반응 가스를 제거하기 위해 N2 가스로 0.2초 ~ 10초간 퍼 지(Purge)하고,d). N 2 to remove unreacted gas again Purge 0.2 to 10 seconds with gas, e). 반응로의 압력은 0.1torr ~ 2torr로 유지하는 조건으로 SiO2 증착하도록 함을 특징으로 하는 플렉시블 OLED 디스플레이 제조방법.e). A method of manufacturing a flexible OLED display, characterized in that to deposit SiO 2 under the condition that the pressure of the reactor is maintained at 0.1torr ~ 2torr. 청구항 2에 있어서; The method according to claim 2; 제1 투습 방지막의 원하는 두께를 얻기 위해 상기 SiNx 증착과, SiO2 증착을 연속해서 반복적으로 실시하도록 함을 특징으로 하는 플렉시블 OLED 디스플레이 제조방법.A method of manufacturing a flexible OLED display, characterized in that the SiNx deposition and the SiO 2 deposition are carried out continuously and repeatedly to obtain a desired thickness of the first moisture barrier film. 청구항 2 또는 청구항 3에 있어서;The method of claim 2 or 3; SiH2Cl2 가스 대신 SiH4, (CH3)4Si, Si[N(CH3)]3H를 사용하는 것을 특징으로 하는 SiH 4 , (CH 3 ) 4 Si, Si [N (CH 3 )] 3 H is used instead of SiH 2 Cl 2 gas PEALD 증착 방법 대신 플라즈마(Plasma)를 사용하지 않는 ALD 방법으로 증착하는 것을 특징으로 하는 플렉시블 OLED 디스플레이 제조방법.Flexible OLED display manufacturing method characterized in that the deposition by ALD method that does not use plasma (Plasma) instead of PEALD deposition method. 청구항 2에 있어서;The method according to claim 2; 제1 투습 방지막으로 라미네이트(Laminate) 박막이 아닌 SiNx와 SiO2를 각각 단일막으로 사용하는 것을 특징으로 하는 플렉시블 OLED 디스플레이 제조방법.A method of manufacturing a flexible OLED display, wherein SiNx and SiO 2 are used as a single film instead of a laminate thin film as a first moisture barrier layer. 청구항 1 또는 청구항 2에 있어서;The method according to claim 1 or 2; SiNx 및 SiOx 박막을 유기물 투습 방지가 아닌 플라스틱(Plastic) 기판의 투습 방지막으로 사용하는 것을 특징으로 하는 플렉시블 OLED 디스플레이 제조방법.A method of manufacturing a flexible OLED display, wherein SiNx and SiOx thin films are used as a moisture barrier of a plastic substrate, rather than an organic moisture barrier. 청구항 1 또는 청구항 2에 있어서;The method according to claim 1 or 2; 제2 투습 방지막으로 SiNx 대신 SiOx를 사용하는 것을 특징으로 하는 플렉시블 OLED 디스플레이 제조방법.A method of manufacturing a flexible OLED display, wherein SiOx is used instead of SiNx as a second moisture barrier. 청구항 1 또는 청구항 2에 있어서;The method according to claim 1 or 2; 제2 투습 방지막으로 Al2O3 대신 Al을 사용하는 것을 특징으로 하는 플렉시블 OLED 디스플레이 제조방법.A method of manufacturing a flexible OLED display, wherein Al is used instead of Al 2 O 3 as a second moisture barrier.
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Publication number Priority date Publication date Assignee Title
KR20110101518A (en) * 2010-03-08 2011-09-16 박원석 Flexible substrate and flexible organic light emitting display with preventing humidity and method of manufacturing the same
CN111430576A (en) * 2019-01-09 2020-07-17 精工爱普生株式会社 Method for manufacturing organic electroluminescent device, and electronic apparatus
US11404667B2 (en) 2018-11-30 2022-08-02 Samsung Display Co., Ltd. Display device and method for fabricating the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110101518A (en) * 2010-03-08 2011-09-16 박원석 Flexible substrate and flexible organic light emitting display with preventing humidity and method of manufacturing the same
US11404667B2 (en) 2018-11-30 2022-08-02 Samsung Display Co., Ltd. Display device and method for fabricating the same
CN111430576A (en) * 2019-01-09 2020-07-17 精工爱普生株式会社 Method for manufacturing organic electroluminescent device, and electronic apparatus
JP2020113385A (en) * 2019-01-09 2020-07-27 セイコーエプソン株式会社 Organic electroluminescent device manufacturing method, organic electroluminescent device and electronic equipment

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