KR20100071392A - Chemical mechanical polishing slurry compositions for polishing metal wirings - Google Patents
Chemical mechanical polishing slurry compositions for polishing metal wirings Download PDFInfo
- Publication number
- KR20100071392A KR20100071392A KR1020080130089A KR20080130089A KR20100071392A KR 20100071392 A KR20100071392 A KR 20100071392A KR 1020080130089 A KR1020080130089 A KR 1020080130089A KR 20080130089 A KR20080130089 A KR 20080130089A KR 20100071392 A KR20100071392 A KR 20100071392A
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- iron
- slurry composition
- polishing
- cmp slurry
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 62
- 239000002002 slurry Substances 0.000 title claims abstract description 49
- 239000000203 mixture Substances 0.000 title claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 26
- 239000002184 metal Substances 0.000 title claims abstract description 26
- 239000000126 substance Substances 0.000 title abstract description 4
- 150000001732 carboxylic acid derivatives Chemical group 0.000 claims abstract description 13
- NPFOYSMITVOQOS-UHFFFAOYSA-K iron(III) citrate Chemical compound [Fe+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NPFOYSMITVOQOS-UHFFFAOYSA-K 0.000 claims abstract description 13
- 239000007800 oxidant agent Substances 0.000 claims abstract description 13
- -1 peroxide compound Chemical class 0.000 claims abstract description 13
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims abstract description 12
- 150000007522 mineralic acids Chemical class 0.000 claims abstract description 10
- 150000007514 bases Chemical group 0.000 claims abstract description 8
- 239000002738 chelating agent Substances 0.000 claims abstract description 8
- PLKYGPRDCKGEJH-UHFFFAOYSA-N azane;2-hydroxypropane-1,2,3-tricarboxylic acid;iron Chemical compound N.[Fe].OC(=O)CC(O)(C(O)=O)CC(O)=O PLKYGPRDCKGEJH-UHFFFAOYSA-N 0.000 claims abstract description 7
- LHOWRPZTCLUDOI-UHFFFAOYSA-K iron(3+);triperchlorate Chemical compound [Fe+3].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O LHOWRPZTCLUDOI-UHFFFAOYSA-K 0.000 claims abstract description 7
- 239000003002 pH adjusting agent Substances 0.000 claims abstract description 7
- GOKIPOOTKLLKDI-UHFFFAOYSA-N acetic acid;iron Chemical compound [Fe].CC(O)=O.CC(O)=O.CC(O)=O GOKIPOOTKLLKDI-UHFFFAOYSA-N 0.000 claims abstract description 6
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 claims abstract description 6
- LWLURCPMVVCCCR-UHFFFAOYSA-N iron;4-methylbenzenesulfonic acid Chemical compound [Fe].CC1=CC=C(S(O)(=O)=O)C=C1 LWLURCPMVVCCCR-UHFFFAOYSA-N 0.000 claims abstract description 6
- RGHNJXZEOKUKBD-SQOUGZDYSA-N D-gluconic acid Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims abstract description 5
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 5
- 229910052742 iron Inorganic materials 0.000 claims abstract description 5
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 5
- 239000012498 ultrapure water Substances 0.000 claims abstract description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 15
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 10
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 9
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 claims description 7
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 claims description 7
- 239000001630 malic acid Substances 0.000 claims description 7
- 235000011090 malic acid Nutrition 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 239000004342 Benzoyl peroxide Substances 0.000 claims description 5
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 claims description 5
- 235000019400 benzoyl peroxide Nutrition 0.000 claims description 5
- RUTXIHLAWFEWGM-UHFFFAOYSA-H iron(3+) sulfate Chemical compound [Fe+3].[Fe+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RUTXIHLAWFEWGM-UHFFFAOYSA-H 0.000 claims description 5
- 229910000360 iron(III) sulfate Inorganic materials 0.000 claims description 5
- 239000000377 silicon dioxide Substances 0.000 claims description 5
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 claims description 5
- 239000004343 Calcium peroxide Substances 0.000 claims description 4
- LHJQIRIGXXHNLA-UHFFFAOYSA-N calcium peroxide Chemical compound [Ca+2].[O-][O-] LHJQIRIGXXHNLA-UHFFFAOYSA-N 0.000 claims description 4
- 235000019402 calcium peroxide Nutrition 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- ZJRXSAYFZMGQFP-UHFFFAOYSA-N barium peroxide Chemical compound [Ba+2].[O-][O-] ZJRXSAYFZMGQFP-UHFFFAOYSA-N 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 claims description 3
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 claims description 2
- PMVSDNDAUGGCCE-TYYBGVCCSA-L Ferrous fumarate Chemical compound [Fe+2].[O-]C(=O)\C=C\C([O-])=O PMVSDNDAUGGCCE-TYYBGVCCSA-L 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 claims description 2
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 claims description 2
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 claims description 2
- 235000006408 oxalic acid Nutrition 0.000 claims description 2
- 239000011975 tartaric acid Substances 0.000 claims description 2
- 235000002906 tartaric acid Nutrition 0.000 claims description 2
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 claims 2
- FZIPCQLKPTZZIM-UHFFFAOYSA-N 2-oxidanylpropane-1,2,3-tricarboxylic acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O.OC(=O)CC(O)(C(O)=O)CC(O)=O FZIPCQLKPTZZIM-UHFFFAOYSA-N 0.000 claims 1
- KVZLHPXEUGJPAH-UHFFFAOYSA-N 2-oxidanylpropanoic acid Chemical compound CC(O)C(O)=O.CC(O)C(O)=O KVZLHPXEUGJPAH-UHFFFAOYSA-N 0.000 claims 1
- VTLYFUHAOXGGBS-UHFFFAOYSA-N Fe3+ Chemical compound [Fe+3] VTLYFUHAOXGGBS-UHFFFAOYSA-N 0.000 claims 1
- XVVLAOSRANDVDB-UHFFFAOYSA-N formic acid Chemical compound OC=O.OC=O XVVLAOSRANDVDB-UHFFFAOYSA-N 0.000 claims 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims 1
- ZODDGFAZWTZOSI-UHFFFAOYSA-N nitric acid;sulfuric acid Chemical compound O[N+]([O-])=O.OS(O)(=O)=O ZODDGFAZWTZOSI-UHFFFAOYSA-N 0.000 claims 1
- YKEKYBOBVREARV-UHFFFAOYSA-N pentanedioic acid Chemical compound OC(=O)CCCC(O)=O.OC(=O)CCCC(O)=O YKEKYBOBVREARV-UHFFFAOYSA-N 0.000 claims 1
- QVLTXCYWHPZMCA-UHFFFAOYSA-N po4-po4 Chemical compound OP(O)(O)=O.OP(O)(O)=O QVLTXCYWHPZMCA-UHFFFAOYSA-N 0.000 claims 1
- CBXWGGFGZDVPNV-UHFFFAOYSA-N so4-so4 Chemical compound OS(O)(=O)=O.OS(O)(=O)=O CBXWGGFGZDVPNV-UHFFFAOYSA-N 0.000 claims 1
- 150000002506 iron compounds Chemical group 0.000 abstract description 10
- BAUYGSIQEAFULO-UHFFFAOYSA-L iron(2+) sulfate (anhydrous) Chemical compound [Fe+2].[O-]S([O-])(=O)=O BAUYGSIQEAFULO-UHFFFAOYSA-L 0.000 abstract description 2
- 229910000358 iron sulfate Inorganic materials 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 7
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 3
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 239000003623 enhancer Substances 0.000 description 2
- 235000019253 formic acid Nutrition 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 239000004310 lactic acid Substances 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- ZFACJPAPCXRZMQ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O.OC(=O)C1=CC=CC=C1C(O)=O ZFACJPAPCXRZMQ-UHFFFAOYSA-N 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- SXFBQAMLJMDXOD-UHFFFAOYSA-N (+)-hydrogentartrate bitartrate salt Chemical compound OC(=O)C(O)C(O)C(O)=O.OC(=O)C(O)C(O)C(O)=O SXFBQAMLJMDXOD-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910021577 Iron(II) chloride Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- NGJLSZRKDSIFOD-UHFFFAOYSA-N [acetyloxy-[2-(diacetyloxyamino)ethyl]amino] acetate;iron Chemical compound [Fe].CC(=O)ON(OC(C)=O)CCN(OC(C)=O)OC(C)=O NGJLSZRKDSIFOD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- OVYQSRKFHNKIBM-UHFFFAOYSA-N butanedioic acid Chemical compound OC(=O)CCC(O)=O.OC(=O)CCC(O)=O OVYQSRKFHNKIBM-UHFFFAOYSA-N 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- XTVVROIMIGLXTD-UHFFFAOYSA-N copper(II) nitrate Chemical compound [Cu+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O XTVVROIMIGLXTD-UHFFFAOYSA-N 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- VEPSWGHMGZQCIN-UHFFFAOYSA-H ferric oxalate Chemical compound [Fe+3].[Fe+3].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O VEPSWGHMGZQCIN-UHFFFAOYSA-H 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 1
- 229910000359 iron(II) sulfate Inorganic materials 0.000 description 1
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- NIFHFRBCEUSGEE-UHFFFAOYSA-N oxalic acid Chemical compound OC(=O)C(O)=O.OC(=O)C(O)=O NIFHFRBCEUSGEE-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000007581 slurry coating method Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
본 발명은 CMP 슬러리 조성물에 관한 것으로, 보다 상세하게는 금속 배선 및 질화 규소(silicon nitride)에 대한 연마 속도가 우수한 CMP 슬러리 조성물에 관한 것이다. TECHNICAL FIELD The present invention relates to a CMP slurry composition, and more particularly, to a CMP slurry coating composition having an excellent polishing rate for metal wiring and silicon nitride.
최근 반도체 디바이스의 고집적화에 따른 초점심도(Depth Of Focus)의 엄격화, 최소 선폭의 미세화 등의 요구에 부합하기 위해 초정밀 화학적 기계 연마 공정이 필요하게 되었다. 반도체 디바이스 제조에서 요구되는 최소 선 폭이 더욱 미세해짐에 따라 반도체 제조 공정은 더욱 더 복잡해지고 있다. 뿐만 아니라 디바이스 자체도 성능을 향상 시키기 위해 다층 배선 구조로 바뀌고 있으며 초점심도와 디자인 룰이 더욱 엄격해지므로 평탄화 기술이 더욱 중요하게 되었다. Recently, in order to meet the demands of tighter depth of focus and miniaturization of minimum line width due to high integration of semiconductor devices, an ultra-precision chemical mechanical polishing process is required. As the minimum line width required for semiconductor device manufacturing becomes ever finer, the semiconductor manufacturing process becomes ever more complex. In addition, the device itself is changing to a multi-layered wiring structure to improve performance, and the planarization technology becomes more important as the depth of focus and the design rules become more stringent.
CMP 공정은 반도체 웨이퍼의 표면을 초순수와 연마제, 산화제, 및 보조 첨가제 등이 함유된 슬러리와 연마용 패드 등을 이용하여 연마하는 것으로 다음과 같 은 방법으로 이뤄진다. CMP용 연마기에서 연마 패드 및 웨이퍼를 접촉하여 연마 패드와 웨이퍼를 회전 및 직선 운동을 혼합한 오비탈 운동을 실시하면서 연마제가 포함된 슬러리를 떨어뜨려 연마한다. 따라서 CMP 공정은 물리적인 작용과 화학적 작용에 의해서 웨이퍼 표면에 노출된 부분을 선택적으로 제거하는 평탄화 공정을 말한다.In the CMP process, the surface of the semiconductor wafer is polished by using a slurry containing ultrapure water, an abrasive, an oxidizing agent, and an auxiliary additive, and a polishing pad. In the CMP polishing machine, the polishing pad and the wafer are brought into contact with each other, and the slurry containing the abrasive is dropped and polished while performing the orbital motion in which the polishing pad and the wafer are mixed with rotation and linear motion. Therefore, the CMP process refers to a planarization process that selectively removes portions exposed to the wafer surface by physical and chemical processes.
일반적으로, 반도체 제조 시 커페시티(capacity) 물질로는 질화 규소를 사용한다. 먼저 웨이퍼 전면에 화학 기상 증착 방식으로 질화 규소층을 만든 후 커페시티(capacity) 부분을 제외하고는 모두 제거해야 하는데 일반적으로는 드라이 에치 백(Dry etch back) 또는 CMP 공정을 이용하여 제거한다.In general, silicon nitride is used as a capacitance material in semiconductor manufacturing. First, a silicon nitride layer is formed on the entire surface of the wafer by chemical vapor deposition, and then all but the capacity is removed. In general, the silicon nitride layer is removed using a dry etch back or a CMP process.
드라이 에치 백 방식은 공정이 복잡해지고 에칭 후 잔존물이 발생하여 디바이스(device) 수율을 저하시키는 단점이 있으며, 단 하나의 막질을 제거하기 위해 여러 단계의 공정을 거쳐야 함으로 그 시간과 비용이 많이 소모되게 된다. 또한, 드라이 에치 백 공정을 통한 질화 규소 제거는 하부 막질까지 나쁜 영향을 미칠 수 있으며 더욱이 공정 후 웨이퍼에 남아있는 입자들은 반도체 회로에 치명적인 불량의 원인을 제공할 수 있게 된다.The dry etch back method has the disadvantage of degrading the device yield due to the complicated process and the occurrence of residue after etching, and it requires a lot of time and cost as it has to go through several steps to remove only one film. do. In addition, silicon nitride removal through a dry etch back process can adversely affect the underlying film quality, and furthermore, the particles remaining on the wafer after the process can cause fatal defects in the semiconductor circuit.
CMP 방식은 공정을 단순화할 수 있고 수율을 향상시킬 수 있지만 질화 규소에 대한 낮은 연마 속도로 인해 공정 시간이 길어지게 되며 그에 따라 부 식(erosion) 및 디싱(dishing)이 발생하게 된다. 따라서, 질화 규소에 대한 연마 속도가 높은 CMP 슬러리 조성물에 대한 요구가 강하게 제기되고 있다.The CMP method can simplify the process and improve the yield, but the low polishing rate for silicon nitride leads to longer process times, resulting in erosion and dishing. Therefore, there is a strong demand for a CMP slurry composition having a high polishing rate for silicon nitride.
본 발명은 상기와 같은 종래 기술의 문제점을 해결하기 위한 것으로, 금속 배선 및 질화 규소(silicon nitride)에 대한 연마 속도가 우수한 금속 배선 연마용 CMP 슬러리 조성물을 제공하고자 한다.The present invention is to solve the problems of the prior art as described above, to provide a CMP slurry composition for polishing metal wires excellent in the polishing rate for metal wires and silicon nitride (silicon nitride).
그러므로 본 발명에 의하면 초순수, 연마제, 산화제, 킬레이팅제, 연마속도 향상제, 및 pH 조절제를 포함하는 CMP 슬러리 조성물에 있어서, 상기 산화제로 과산화 화합물과 무기산을 사용하고, 상기 킬레이팅제로 카르복시산을 사용하며, 상기 연마속도 향상제로 아이언 시트레이트(iron citrate), 아이언 클로라이드(iron chloride), 아이언 피-톨루엔술포닉산(iron p-toluenesulfonic acid), 아이언 아세테이트(iron acetate), 암모늄 아이언 시트레이트(ammonium iron citrate), 아이언(III) 설페이트(iron(III) sulfate), 아이언 디-글루코네이트(iron d-gluconate), 및 아이언 퍼클로레이트(iron perchlorate)로 이루어진 그룹에서 선택되는 1종 이상의 철 화합물을 전체 CMP 슬러리 조성물에 대하여 0.01 ~ 3 중량%로 사용하며, 상기 pH 조절제로 염기성 화합물을 사용하는 것을 특징으로 하는 금속 배선 연마용 CMP 슬러리 조성물이 제공된다.Therefore, according to the present invention, in a CMP slurry composition comprising ultrapure water, an abrasive, an oxidizing agent, a chelating agent, a polishing rate improving agent, and a pH adjusting agent, a peroxide compound and an inorganic acid are used as the oxidizing agent, and a carboxylic acid is used as the chelating agent. , Iron citrate, iron chloride, iron p-toluenesulfonic acid, iron acetate, ammonium iron citrate as the polishing rate enhancer ), At least one iron compound selected from the group consisting of iron (III) sulfate, iron d-gluconate, and iron perchlorate. 0.01 to 3% by weight relative to the metal wire, characterized in that using a basic compound as the pH regulator A wearable CMP slurry composition is provided.
상기 연마제로 실리카(Silica), 알루미나(Alumina), 세리아(Ceria), 및 티타 니아(Titania) 중에서 선택되는 1종 이상을 전체 CMP 슬러리 조성물에 대하여 0.1 ~ 25 중량%로 사용하는 것을 특징으로 한다.As the abrasive, at least one selected from silica, alumina, ceria, and titania may be used in an amount of 0.1 to 25 wt% based on the total CMP slurry composition.
상기 과산화 화합물로 하이드로겐 퍼록사이드(hydrogen peroxide), 벤조일 퍼록사이드(benzoyl peroxide), 칼슘 퍼록사이드(calcium peroxide), 바륨 퍼록사이드(barium peroxide), 및 소듐 퍼록사이드(sodium peroxide) 중에서 선택되는 1종 이상을 전체 CMP 슬러리 조성물에 대하여 0.1 ~ 20 중량%로 사용하는 것을 특징으로 한다.The peroxide compound is selected from hydrogen peroxide, benzoyl peroxide, benzoyl peroxide, calcium peroxide, barium peroxide, and sodium peroxide. The above is characterized by using 0.1 to 20% by weight based on the total CMP slurry composition.
상기 무기산으로 질산(nitric acid), 황산(sulfuric acid), 염산(hydrochloric acid), 및 인산(phosphoric acid) 중에서 선택되는 1종 이상을 전체 CMP 슬러리 조성물에 대하여 0.001 ~ 0.2 중량%로 사용하는 것을 특징으로 한다.As the inorganic acid, at least one selected from nitric acid, sulfuric acid, hydrochloric acid, and phosphoric acid is used in an amount of 0.001 to 0.2% by weight based on the total CMP slurry composition. It is done.
상기 카르복시산으로 아세트산(acetic acid), 시트르산(citric acid), 글루타르산(glutaric acid), 글루콜산(glycolic acid), 포름산(formic acid), 젖산(lactic acid), 말산(malic acid), 옥살산(oxalic acid), 프탈산(phthalic acid), 숙신산(succinic acid), 및 타르타르산(tartaric acid) 중에서 선택되는 1종 이상을 전체 CMP 슬러리 조성물에 대하여 0.01 ~ 10 중량%로 사용하는 것을 특징으로 한다.As the carboxylic acid, acetic acid, citric acid, glutaric acid, glutaric acid, glutic acid, formic acid, lactic acid, malic acid, malic acid, oxalic acid oxalic acid), phthalic acid (phthalic acid), succinic acid (succinic acid), and tartaric acid (tartaric acid) at least one selected from 0.01 to 10% by weight based on the total CMP slurry composition.
상기 염기성 화합물로 수산화칼륨(potassium hydroxide), 테트라메틸암모늄 하이드록사이드(Tetramethylammonium hydroxide), 암모니아(ammonia) 중에서 선택되는 1종 이상을 전체 CMP 슬러리 조성물에 대하여 0.001 ~ 0.5 중량%로 사용하는 것을 특징으로 한다.As the basic compound, at least one selected from potassium hydroxide, tetramethylammonium hydroxide, and ammonia may be used in an amount of 0.001 0.00 to 0.5 by weight based on the total CMP slurry composition. do.
또한, 본 발명에서는 상기 금속 배선 연마용 CMP 슬러리 조성물을 사용하여 텅스텐, 알루미늄, 구리 중에서 선택된 1종 이상의 금속 배선과 질화 규소 층을 연마하는 방법이 제공된다.In addition, the present invention provides a method for polishing at least one metal wiring and silicon nitride layer selected from tungsten, aluminum, copper using the CMP slurry composition for metal wiring polishing.
본 발명의 CMP 슬러리 조성물은 금속 배선 및 질화 규소에 대한 연마 속도가 우수하므로 금속 배선 연마 공정에 유용하다.The CMP slurry composition of the present invention is useful for metal wire polishing processes because of its excellent polishing rate for metal wires and silicon nitride.
본 발명은 초순수, 연마제, 산화제, 킬레이팅제, 연마속도 향상제, 및 pH 조절제를 포함하는 CMP 슬러리 조성물에 있어서, 상기 산화제로 과산화 화합물과 무기산을 사용하고, 상기 킬레이팅제로 카르복시산을 사용하며, 상기 연마속도 향상제로 아이언 시트레이트(iron citrate), 아이언 클로라이드(iron chloride), 아이언 피-톨루엔술포닉산(iron p-toluenesulfonic acid), 아이언 아세테이트(iron acetate), 암모늄 아이언 시트레이트(ammonium iron citrate), 아이언(III) 설페이트(iron(III) sulfate), 아이언 디-글루코네이트(iron d-gluconate), 및 아이언 퍼클로레이트(iron perchlorate)로 이루어진 그룹에서 선택되는 1종 이상의 철 화합물을 전체 CMP 슬러리 조성물에 대하여 0.01 ~ 3 중량%로 사용하며, 상기 pH 조절제로 염기성 화합물을 사용하는 것을 특징으로 하는 금속 배선 연마용 CMP 슬러리 조성물에 관한 것이다.The present invention provides a CMP slurry composition comprising ultrapure water, an abrasive, an oxidizing agent, a chelating agent, a polishing rate improving agent, and a pH adjusting agent, wherein a peroxide compound and an inorganic acid are used as the oxidizing agent, and a carboxylic acid is used as the chelating agent. Iron citrate, iron chloride, iron p-toluenesulfonic acid, iron acetate, ammonium iron citrate, One or more iron compounds selected from the group consisting of iron (III) sulfate, iron d-gluconate, and iron perchlorate can be used for the entire CMP slurry composition. 0.01 to 3% by weight, metal wire polishing CMP slurry, characterized in that using a basic compound as the pH adjuster It relates to the sacred.
이하, 본 발명을 상세히 설명한다.Hereinafter, the present invention will be described in detail.
상기 연마제로는 실리카, 알루미나, 세리아, 및 티타니아 등의 미분의 금속 산화물을 사용하는 것이 바람직하며, 그 중에서 실리카가 슬러리 조성물의 분산 안정성이 우수하고 연마 시 스크래치를 적게 발생시키므로 가장 바람직하다. 상기 연마제는 연마 속도, 슬러리 조성물의 분산 안정성, 피연마물의 표면 특성 측면에서 전체 CMP 슬러리 조성물에 대하여 0.1 ~ 25 중량%로 사용되는 것이 바람직하며, 0.5 ~ 15 중량%로 사용되는 것이 보다 바람직하며, 1 ~ 10 중량%로 사용되는 것이 가장 바람직하다. It is preferable to use finely divided metal oxides such as silica, alumina, ceria, and titania. Among them, silica is most preferable because silica has excellent dispersion and stability of slurry composition and generates less scratches during polishing. The abrasive is preferably used in an amount of 0.1 to 25% by weight, more preferably 0.5 to 15% by weight, based on the polishing rate, the dispersion stability of the slurry composition, and the surface properties of the polished product. Most preferably, it is used at 1 to 10% by weight.
본 발명에서 금속 표면을 산화시키기 위해 사용하는 산화제로는 과산화 화합물과 무기산을 함께 사용한다.In the present invention, as the oxidizing agent used to oxidize the metal surface, a peroxide compound and an inorganic acid are used together.
상기 과산화 화합물로는 하이드로겐 퍼록사이드, 벤조일 퍼록사이드, 칼슘 퍼록사이드, 바륨 퍼록사이드, 및 소듐 퍼록사이드 등의 퍼록사이드 계열의 산화제를 사용하는 것이 바람직하며, 산화력과 슬러리의 분산 안정성 측면에서 과산화수소를 사용하는 것이 가장 바람직하다. 상기 산화제는 연마 속도, 피연마물의 표면 특성 측면에서 전체 CMP 슬러리 조성물에 대하여 0.1 ~ 20 중량%로 사용되는 것이 바람직하며, 0.5 ~ 15 중량%로 사용되는 것이 보다 바람직하며, 1 ~ 10 중량%로 사용되는 것이 가장 바람직하다.As the peroxide compound, it is preferable to use peroxide-based oxidizing agents such as hydrogen peroxide, benzoyl peroxide, calcium peroxide, barium peroxide, and sodium peroxide®, and hydrogen peroxide in terms of oxidation power and dispersion stability of the slurry. Most preferably used. The oxidizing agent is preferably used in an amount of 0.1 to 20% by weight, more preferably 0.5 to 15% by weight, with respect to the total CMP slurry composition in terms of polishing rate and surface properties of the polished material. Most preferably used.
상기 무기산으로는 질산, 황산, 염산, 및 인산 중에서 선택되는 1종 이상을 사용하는 것이 바람직하며, 연마 후 오염에 의한 문제점 등을 고려할 때 질산이 가장 바람직하다. 상기 무기산은 연마 속도, 피연마물의 표면 특성 측면에서 전체 CMP 슬러리 조성물에 대하여 0.001 ~ 0.2 중량%로 사용되는 것이 바람직하며, 0.005 ~ 0.1 중량%로 사용되는 것이 보다 바람직하며, 0.01 ~ 0.05 중량%로 사용되는 것이 가장 바람직하다.As the inorganic acid, it is preferable to use at least one selected from nitric acid, sulfuric acid, hydrochloric acid, and phosphoric acid, and nitric acid is most preferable in consideration of problems due to contamination after polishing. The inorganic acid is preferably used in an amount of 0.001 to 0.2% by weight, more preferably 0.005 to 0.1% by weight based on the total CMP slurry composition in terms of polishing rate and surface properties of the polished material, and 0.01 to 0.05% by weight. Most preferably used.
상기 과산화 화합물과 무기산만을 이용하여 피연마 대상인 텅스텐 등의 금속 표면을 산화시켜 산화막을 형성시키는 경우에는 금속에 대한 산화 속도가 충분하지 않아 과량을 사용하게 되고, 이럴 경우, 슬러리 조성물이 너무 강한 산도를 갖게 되어 취급상의 문제가 있을 뿐만 아니라, 연마 시 피연마 대상인 금속에 부식(corrosion) 및 균열(seam) 등이 발생할 우려가 있다.When only the peroxide compound and the inorganic acid are used to oxidize a metal surface such as tungsten to be polished to form an oxide film, the oxidation rate of the metal is not sufficient, so that an excessive amount is used. In addition, there is a problem in handling, and there is a fear of corrosion (corrosion) and cracks in the metal to be polished during polishing.
따라서, 상기와 같은 문제점을 해결하기 위하여 본 발명에서는 반도체 공정에 요구되는 연마속도를 얻기 위하여 카르복시산을 첨가함으로써 그 목적을 달성할 수 있다. 이는 카르복시산의 기계적 작용에 의해 텅스텐 표면으로부터 탈리된 산화물(WxOy)과 착체를 형성하여 탈리된 연마 산화물을 반응계로부터 계속적으로 제거해 줌으로써 반응을 촉진하기 때문이다. 또한, 상기 카르복시산은 연마 재현성 및 슬러리의 안정성을 개선하기 위한 안정제로서도 역할을 한다.Therefore, in order to solve the above problems, the present invention can achieve the object by adding carboxylic acid to obtain the polishing rate required for the semiconductor process. This is because the reaction is promoted by forming a complex with the oxide (W x O y ) detached from the tungsten surface by the mechanical action of the carboxylic acid to continuously remove the detached polishing oxide from the reaction system. In addition, the carboxylic acid also serves as a stabilizer for improving the polishing reproducibility and the stability of the slurry.
상기 카르복시산으로는 아세트산, 시트르산, 글루타르산, 글루콜산, 포름산, 젖산, 말산, 옥살산, 프탈산, 숙신산, 및 타르타르산 중에서 선택되는 1종 이상을 사용하는 것이 바람직하며, 이 중 말산이 가장 바람직하다. 상기 카르복시산은 연마 속도, 슬러리의 분산 안정성 측면에서 전체 CMP 슬러리 조성물에 대하여 0.01 ~ 10 중량%로 사용되는 것이 바람직하며, 0.05 ~ 5 중량%로 사용되는 것이 보다 바람직하며, 0.1 ~ 3 중량%로 사용되는 것이 가장 바람직하다.As the carboxylic acid, it is preferable to use at least one selected from acetic acid, citric acid, glutaric acid, glutic acid, formic acid, lactic acid, malic acid, oxalic acid, phthalic acid, succinic acid, and tartaric acid, of which malic acid is most preferred. The carboxylic acid is preferably used in an amount of 0.01 to 10% by weight, more preferably 0.05 to 5% by weight, and 0.1 to 3% by weight, based on the polishing rate and dispersion stability of the slurry. Most preferably.
상기 카르복시산으로 이중 결합을 갖는 카르복시산을 사용할 경우에는 연마속도 향상에는 도움이 되지만 과산화수소와 섞은 후에 연마 성능을 오랫동안 지속하지 못하므로 주의하여야 한다. 그 이유는 과산화수소가 라디칼로 변환되면서 이중 결합을 갖는 카르복시산의 이중결합을 깨는데 소모됨으로써 결과적으로 시간 이 지날수록 슬러리에 있는 산화제의 농도가 줄어들기 때문이다.In the case of using the carboxylic acid having a double bond as the carboxylic acid, it is helpful to improve the polishing rate, but care should be taken since the polishing does not last long after mixing with hydrogen peroxide. This is because hydrogen peroxide is converted to radicals and consumed to break 중 double bonds of carboxylic acids with double bonds, resulting in a decrease in the concentration of oxidant in the slurry over time.
상기 철 화합물은 질화 규소에 대한 연마속도 향상제로 작용하며, 질화 규소에 대한 연마속도를 향상시킴으로써 공정 단순화 및 공정 시간 단축을 할 수 있는 장점이 있다. 상기 철 화합물로는 아이언 시트레이트, 아이언 클로라이드, 아이언 피-톨루엔술포닉산, 아이언 아세테이트, 암모늄 아이언 시트레이트, 아이언(III) 설페이트, 아이언 디-글루코네이트, 및 아이언 퍼클로레이트로 이루어진 그룹에서 선택되는 1종 이상의 철 화합물을 사용하는 것이 바람직하며, 아이언 시트레이트, 아이언 클로라이드, 암모늄 아이언 시트레이트, 및 아이언 퍼클로레이트가 보다 바람직하다. 상기 철 화합물은 연마 속도, 피연마물의 표면 특성 측면에서 전체 CMP 슬러리 조성물에 대하여 0.01 ~ 3 중량%로 사용되는 것이 바람직하며, 0.05 ~ 2 중량%로 사용되는 것이 보다 바람직하며, 0.1 ~ 1 중량%로 사용되는 것이 가장 바람직하다.The iron compound acts as a polishing rate enhancer for silicon nitride, and has an advantage of simplifying the process and shortening the process time by improving the polishing rate for silicon nitride. The iron compound is selected from the group consisting of iron citrate, iron chloride, iron p-toluenesulphonic acid, iron acetate, ammonium iron citrate, iron (III) sulfate, iron di-gluconate, and iron perchlorate It is preferable to use the above iron compound, and iron citrate, iron chloride, ammonium iron citrate, and iron perchlorate are more preferable. The iron compound is preferably used in an amount of 0.01 to 3% by weight, more preferably 0.05 to 2% by weight, and more preferably 0.1 to 1% by weight, based on the total CMP slurry composition in terms of polishing rate and surface properties of the abrasive. Most preferably used as.
상기 염기성 화합물로는 수산화칼륨, 테트라메틸암모늄 하이드록사이드, 암모니아 중에서 선택되는 1종 이상을 사용하는 것이 바람직하며, 이 중 수산화칼륨과 테트라메틸암모늄 하이드록사이드가 보다 바람직하다. 상기 테트라메틸암모늄 하이드록사이드는 테트라메틸암모늄 이온이 연마 입자 사이에 존재하여 입자간 응집을 방해하는 역할을 하므로 시간이 경과하여 연마 입자간의 전기적인 안정화가 약화되더라도 크기가 큰 테트라메틸암모늄 이온이 연마 입자 사이에 존재하여 단단한 결합을 방해함으로써 약한 외부 충격에도 쉽게 재분산이 될 수 있게 한다. 상기 염기성 화합물은 연마 속도, 슬러리의 분산 안정성, 피연마물의 표면 특성 측면에서 전체 CMP 슬러리 조성물에 대하여 0.001 ~ 0.5 중량%로 사용되는 것이 바람직하며, 0.005 ~ 0.2 중량%로 사용되는 것이 보다 바람직하며, 0.01 ~ 0.1 중량%로 사용되는 것이 가장 바람직하다.As the basic compound, at least one selected from potassium hydroxide, tetramethylammonium hydroxide and ammonia is preferably used, and potassium hydroxide and tetramethylammonium hydroxide are more preferable. The tetramethylammonium hydroxide is a tetramethylammonium ions are present between the abrasive particles to interfere with the aggregation between the particles, so even after a large period of time, the electrical stability between the abrasive and particles is weakened, the large tetramethylammonium ions are polished It exists between the particles and interferes with the hard bonds, making it easy to redistribute even in mild external impacts. The basic compound is preferably used in an amount of 0.001 to 0.5% by weight, more preferably 0.005 to 0.2% by weight based on the total CMP slurry composition in terms of polishing rate, dispersion stability of the slurry, and surface properties of the polished product. Most preferably used at 0.01 to 0.1% by weight.
본 발명의 금속 배선 연마용 CMP 슬러리 조성물은 텅스텐, 알루미늄, 구리 중에서 선택된 1종 이상의 금속 배선과 질화 규소 층을 연마하는 데에 특히 효과적이다.The CMP slurry composition for metal wiring polishing of the present invention is particularly effective for polishing one or more metal wirings and silicon nitride layers selected from tungsten, aluminum and copper.
이하 실시예를 들어 본 발명을 보다 구체적으로 설명한다. 하기 실시예들은 예시적 의미를 지니는 것으로 본 발명의 범위를 제한하는 것은 아니다.The present invention will be described in more detail with reference to the following Examples. The following examples are meant to be illustrative, but do not limit the scope of the invention.
[실시예 1]Example 1
시판 Aerosil 90G (Degussa社) 60g, 말산 6g, 질산 0.2g, 수산화칼륨 0.3g, Iron citrate 0.015mol을 탈이온수에 넣어 총 1000g의 혼합물을 만들었다. 이 혼합물을 2ℓ의 폴리에틸렌 플라스크에서 2,000rpm에서 2시간 동안 교반시킨 후, 고압 분산 방법을 이용하여 1,200psi에서 1회 동안 분산시켰다. 이렇게 해서 얻어진 슬러리를 1㎛ 필터를 이용하여 필터한 후, 과산화수소 80g을 섞은 후 아래와 같은 조건에서 1분간 연마하였다. 그 결과를 표 1에 나타내었다.60 g of commercially available Aerosil 90G (Degussa), 6 g of malic acid, 0.2 g of nitric acid, 0.3 g of potassium hydroxide, and 0.015 mol of iron citrate were added to deionized water to make a total of 1000 g. The mixture was stirred for 2 h at 2,000 rpm in a 2 l polyethylene flask and then dispersed once at 1,200 psi using a high pressure dispersion method. The slurry thus obtained was filtered using a 1 µm filter, and then 80 g of hydrogen peroxide was mixed and ground for 1 minute under the following conditions. The results are shown in Table 1.
o 연마기 Model: Mirra (AMAT社)o Grinder Model: Mirra (AMAT)
o 연마조건:o Polishing condition:
- Pad type: IC1010/SubaⅣ Stacked(Rodel社)-Pad type: IC1010 / SubaⅣ Stacked (Rodel)
- Head Speed : 97rpm-Head Speed: 97rpm
- Platen Speed : 83rpm-Platen Speed: 83rpm
- Pressure(Inner/Retainer ring/Membrane) : 6.2psi/7.0psi/5.0psiPressure (Inner / Retainer ring / Membrane): 6.2psi / 7.0psi / 5.0psi
- Slurry flow : 200㎖/min-Slurry flow: 200ml / min
o 연마대상 : o Polishing target:
- W blanket wafer: Silicon wafer위에 PE-TEOS 1000Å를 증착 후 텅스텐 6,000Å을 CVD 방법으로 증착하였다.W blanket wafer: PE-TEOS 1000Å was deposited on the silicon wafer, and tungsten 6,000Å was deposited by CVD.
- SiN blanket wafer: Silicon wafer위에 PE-TEOS 1000Å를 증착 후 질화규소 1,800Å을 CVD 방법으로 증착하였다.-SiN blanket wafer: After depositing PE-TEOS 1000 증착 on the silicon wafer, silicon nitride 1,800Å was deposited by CVD method.
[실시예 2 내지 9][Examples 2 to 9]
Iron citrate 대신에, 하기 표 1에 나타난 각각의 철 화합물을 Iron citrate와 동일 몰 함량으로 첨가(탈이온수의 양은 첨가하는 철 화합물의 분자량에 따라 조금씩 차이가 있음)한 것을 제외하고는 실시예 1과 동일하게 제조한 후 연마 평가를 실시하였으며, 그 결과를 표 1에 나타내었다.Instead of iron citrate, each iron compound shown in Table 1 below was added in the same molar amount as iron citrate (the amount of deionized water varies slightly depending on the molecular weight of the iron compound added) Polishing evaluation was performed after the same manufacturing, the results are shown in Table 1.
[비교예 1 내지 9][Comparative Examples 1 to 9]
Iron citrate 대신에, 하기 표 2에 나타난 각각의 철 화합물을 Iron citrate와 동일 몰 함량으로 첨가(탈이온수의 양은 첨가하는 철 화합물의 분자량에 따라 조금씩 차이가 있음)한 것을 제외하고는 실시예 1과 동일하게 제조한 후 연마 평가를 실시하였으며, 그 결과를 표 2에 나타내었다.Instead of the iron citrate, each iron compound shown in Table 2 below was added in the same molar content as the iron citrate (the amount of deionized water is slightly different depending on the molecular weight of the iron compound to be added) Polishing evaluation was performed after the same manufacturing, the results are shown in Table 2.
[비교예 10][Comparative Example 10]
Iron citrate를 첨가하지 않은 것을 제외하고는 실시예 1과 동일하게 제조한 후 연마 평가를 실시하였으며, 그 결과를 표 2에 나타내었다.Except not adding the iron citrate was prepared in the same manner as in Example 1 and then subjected to the polishing evaluation, the results are shown in Table 2.
연마속도W
Polishing Speed
연마속도W
Polishing Speed
상기 결과로부터 본 발명의 CMP 슬러리 조성물은 텅스텐 금속 배선 및 질화 규소에 대하여 우수한 연마 속도를 나타내며, 특히 질화 규소에 대하여 월등히 우수한 연마 속도를 나타냄을 확인할 수 있었다.From the above results, it was confirmed that the CMP slurry composition of the present invention exhibited an excellent polishing rate for tungsten metal wiring and silicon nitride, and in particular, an excellent polishing rate for silicon nitride.
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080130089A KR101266537B1 (en) | 2008-12-19 | 2008-12-19 | Chemical mechanical polishing slurry compositions for polishing metal wirings |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080130089A KR101266537B1 (en) | 2008-12-19 | 2008-12-19 | Chemical mechanical polishing slurry compositions for polishing metal wirings |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20100071392A true KR20100071392A (en) | 2010-06-29 |
| KR101266537B1 KR101266537B1 (en) | 2013-05-27 |
Family
ID=42368901
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020080130089A KR101266537B1 (en) | 2008-12-19 | 2008-12-19 | Chemical mechanical polishing slurry compositions for polishing metal wirings |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101266537B1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012091330A2 (en) * | 2010-12-31 | 2012-07-05 | 제일모직 주식회사 | Cmp slurry composition for selectively polishing a silicon nitride layer, and method for polishing a silicon nitride layer using same |
| KR101293790B1 (en) * | 2010-12-31 | 2013-08-06 | 제일모직주식회사 | CMP slurry composition for polishing tungsten patterned wafer and polishing method using the same |
| US11643599B2 (en) | 2018-07-20 | 2023-05-09 | Versum Materials Us, Llc | Tungsten chemical mechanical polishing for reduced oxide erosion |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20190382619A1 (en) * | 2018-06-18 | 2019-12-19 | Versum Materials Us, Llc | Tungsten Chemical Mechanical Polishing Compositions |
| KR20200058017A (en) | 2018-11-19 | 2020-05-27 | 삼성전자주식회사 | Polishing slurry and method of manufacturing semiconductor device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3912927B2 (en) | 1999-05-10 | 2007-05-09 | 花王株式会社 | Polishing liquid composition |
| JP4658825B2 (en) | 2006-02-23 | 2011-03-23 | 富士フイルム株式会社 | Polishing liquid for metal |
-
2008
- 2008-12-19 KR KR1020080130089A patent/KR101266537B1/en active IP Right Grant
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012091330A2 (en) * | 2010-12-31 | 2012-07-05 | 제일모직 주식회사 | Cmp slurry composition for selectively polishing a silicon nitride layer, and method for polishing a silicon nitride layer using same |
| WO2012091330A3 (en) * | 2010-12-31 | 2012-09-13 | 제일모직 주식회사 | Cmp slurry composition for selectively polishing a silicon nitride layer, and method for polishing a silicon nitride layer using same |
| KR101293790B1 (en) * | 2010-12-31 | 2013-08-06 | 제일모직주식회사 | CMP slurry composition for polishing tungsten patterned wafer and polishing method using the same |
| KR101340551B1 (en) * | 2010-12-31 | 2013-12-11 | 제일모직주식회사 | CMP slurry composition for selective polishing of silicon nitride |
| US11643599B2 (en) | 2018-07-20 | 2023-05-09 | Versum Materials Us, Llc | Tungsten chemical mechanical polishing for reduced oxide erosion |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101266537B1 (en) | 2013-05-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2000160139A (en) | Grinding composition and grinding method using the same | |
| JP2007243209A (en) | Cmp slurry composition for metal wiring | |
| US20050112892A1 (en) | Chemical mechanical abrasive slurry and method of using the same | |
| KR101266537B1 (en) | Chemical mechanical polishing slurry compositions for polishing metal wirings | |
| KR101279966B1 (en) | CMP slurry composition for polishing metal wiring and polishing method using the same | |
| KR101526006B1 (en) | Cmp slurry composition for copper and polishing method using the same | |
| KR100970094B1 (en) | CMP slurry composition for polishing copper line and polishing method using the same | |
| KR100459101B1 (en) | Slurry composition for chemical mechanical polishing of metal wiring | |
| KR100552381B1 (en) | Slurry Composition for Chemical Mechanical Polishing of Metal | |
| KR100552380B1 (en) | Slurry composition for chemical mechanical polishing of metal | |
| KR100359216B1 (en) | Slurry for polishing metal layer of semiconductor device | |
| KR101279963B1 (en) | CMP slurry composition for polishing metal wiring and polishing method using the same | |
| KR100699185B1 (en) | CMP Slurry for Polishing Metal Wiring | |
| KR100811122B1 (en) | Slurry Composition for Chemical Mechanical Polishing | |
| KR100565424B1 (en) | Dispersion stability improved CMP Slurry for Polishing metal line | |
| KR100600598B1 (en) | Slurry Composition for Chemical Mechanical Polishing of Tungsten Wire | |
| KR100546788B1 (en) | Slurry Composition for Polishing Metal having High-selectivity | |
| KR100725552B1 (en) | Composition of slurry for CMP | |
| KR100649859B1 (en) | CMP Slurry for Polishing of Cu Lines | |
| KR100660753B1 (en) | Cmp precursor ? slurry for semiconductor manufacturing having high dispersion stability | |
| KR20100073668A (en) | Cmp slurry composition for polishing metal wiring and polishing method using the same | |
| KR100738842B1 (en) | Polishing composition and polishing method employing it | |
| TW202027175A (en) | Chemical-mechanical polishing slurry for polishing tungsten | |
| KR101178718B1 (en) | CMP slurry composition for polishing metal wiring and polishing method using the same | |
| KR100724287B1 (en) | CMP Slurry of low oxide erosion for chemical mechanical polishing of metal lines |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20160426 Year of fee payment: 4 |
|
| FPAY | Annual fee payment |
Payment date: 20170424 Year of fee payment: 5 |
|
| FPAY | Annual fee payment |
Payment date: 20180503 Year of fee payment: 6 |
|
| FPAY | Annual fee payment |
Payment date: 20190502 Year of fee payment: 7 |