KR20100043844A - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

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Publication number
KR20100043844A
KR20100043844A KR1020080103063A KR20080103063A KR20100043844A KR 20100043844 A KR20100043844 A KR 20100043844A KR 1020080103063 A KR1020080103063 A KR 1020080103063A KR 20080103063 A KR20080103063 A KR 20080103063A KR 20100043844 A KR20100043844 A KR 20100043844A
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KR
South Korea
Prior art keywords
substrate
support
chamber
edge
processing apparatus
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KR1020080103063A
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Korean (ko)
Inventor
김성렬
조길영
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주식회사 테스
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Priority to KR1020080103063A priority Critical patent/KR20100043844A/en
Publication of KR20100043844A publication Critical patent/KR20100043844A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention provides a chamber for providing a processing space, a substrate shield provided in an upper region of the chamber to protect an upper surface of the substrate and injecting a first processing gas to the upper surface of the substrate, and provided below the substrate shield. A substrate lift having a lower surface and supporting a lower surface of the substrate, the substrate support having a support ring for lifting a second edge of the substrate and an edge of the substrate placed on the substrate support; It provides a plasma processing apparatus having a horizontal portion formed along the circumference, and a stepped portion extending inwardly from the horizontal portion, the stepped portion is formed to be inclined downward in the inward direction.

In the present invention as described above, the stepped portion of the substrate lift on which the edge of the substrate is mounted is formed to be inclined downward in the inward direction. Therefore, since the cleaning gas can reach as close as possible to the bottom edge of the substrate, the cleaning efficiency of the bottom edge of the substrate can be further improved.

Description

Plasma Processing Equipment {PLASMA PROCESSING APPARATUS}

The present invention relates to a plasma processing apparatus, and more particularly, to a plasma processing apparatus for removing various foreign matter formed on a substrate.

In general, a semiconductor device and a flat panel display are manufactured by performing a plurality of thin film deposition and etching processes. That is, by forming a thin film in a predetermined region of the substrate by performing a deposition process, by performing an etching process using an etching mask to remove a portion of the unnecessary thin film to form a desired predetermined circuit pattern (pattern) or circuit element on the substrate Is produced.

However, since the thin film is formed on the entire surface of the substrate during the thin film deposition process, and the thin film formed in the center region of the substrate is an etch target, the thin film remains at the edge of the substrate without being removed. Done. In addition, during the etching process, a process by-product, for example, particles are deposited. In addition, the thin film and the particles may be deposited on the lower surface of the substrate through the gap between the substrate and the substrate holder portion supporting the substrate. As such, unwanted deposits may be formed on the edges of the substrate and the lower surface of the substrate. If the process is continued without removing the deposits, many problems may occur such as bending of the substrate or difficulty in aligning the substrate.

Therefore, recently, a plasma processing apparatus for removing deposits existing on the edge of the substrate and the lower surface of the substrate has been developed. Such a plasma processing apparatus exposes an edge of a substrate by seating a substrate on a substrate support having a smaller size than the substrate, and arranges a shielding plate close to the upper surface of the substrate to protect the center of the upper surface of the substrate. Sediments formed at the edge of the lower surface, that is, the bevel area, are removed using plasma.

In this regard, Korean Patent Application No. 10-2004-0030574 provides a hoop-shaped electrode on which the edge of the substrate is seated around the outer circumference of the lower electrode having a smaller diameter than the substrate in order to control the etching rate of the side surface of the substrate. An apparatus is proposed in which the bevel region of the substrate is exposed and etched as it descends. In addition, the Korean Patent Application No. 10-2002-0011395 is provided with an electrostatic chuck so that the stepped portion is provided on the surface edge of the lower electrode and is elevated through the center of the lower electrode, the edge stepped portion of the lower electrode as the electrostatic chuck is lowered An apparatus has been proposed in which the bevel region of the substrate is exposed and etched outward.

However, there has been a problem in that the plasma processing apparatus cannot effectively remove the deposits formed in the lower region of the substrate, in particular, the center of the lower surface. In order to solve this problem, the bottom surface of the substrate is exposed on the substrate holder to expose the bottom surface of the substrate, and a gas injection unit is disposed below the substrate to remove deposits formed on the entire lower surface of the exposed substrate using plasma. The scheme has been proposed. However, in this case, a problem arises in that the bevel area of the substrate, in particular, the deposit formed at the top edge of the substrate cannot be removed completely. Also in this case, since the bottom edge of the substrate is covered by the substrate holder, there is a problem that it is difficult to effectively remove the deposits formed on the bottom edge of the substrate.

The present invention provides a plasma processing apparatus capable of performing both the bevel region and the bottom surface region of a substrate in the same chamber.

In addition, the present invention provides a plasma processing apparatus capable of effectively cleaning not only the central region of the lower surface of the substrate but also the edge of the lower surface of the substrate.

Plasma processing apparatus according to an aspect of the present invention, the chamber for providing a processing space; A substrate shielding portion provided in an upper region of the chamber to protect an upper surface of the substrate and to spray a first processing gas on the upper surface of the substrate; A substrate support part provided below the substrate shielding part to support a lower surface of the substrate and to spray a second processing gas onto the lower surface of the substrate; And a support ring configured to lift and lift an edge of the substrate placed on the substrate support. The support ring includes a horizontal portion formed along a circumference of the substrate, and a stepped portion extending inwardly from the horizontal portion, and the stepped portion is formed to be inclined downward in an inward direction.

The horizontal portion may be formed in a single ring shape or a circular piece shape in which a plurality of single rings are cut.

The substrate lift preferably includes a support disposed to be spaced apart from the lower portion of the support ring, a plurality of support rods for fixing the support ring to the support, and an elevating portion for elevating the support.

The support rod is preferably installed through the edge of the substrate support.

It is preferable that a protrusion having a smaller diameter than the substrate is provided in a central region of the substrate support, and a recess is provided in an inner region of the protrusion, and an injection nozzle is provided in the recess.

Preferably, the injection nozzles have a protruding length that increases from the center of the protrusion toward the outside.

Preferably, the support ring of the substrate support is elevated in the outer region of the protrusion.

The invention further comprises a substrate sensor installed on the upper side of the chamber to sense the position of the substrate, the substrate shield is preferably formed with at least one guide hole for guiding the light output from the substrate sensor Do.

According to the present invention, since both the bevel area and the lower surface area of the substrate can be cleaned in the same chamber, the installation space can be reduced and the process time can be shortened.

In addition, in the present invention, the stepped portion of the substrate lift on which the edge of the substrate is mounted is formed to be inclined downward in the inward direction. Therefore, the area where the substrate touches the stepped portion is minimized to prevent the deposits of the substrate from falling in an undesired situation, and at the same time, the cleaning gas can reach the edge of the lower surface of the substrate as close as possible, so the cleaning efficiency of the lower surface of the substrate is reduced. Can further improve

According to the present invention, since the guide hole is provided in the substrate shielding part, the operation of the substrate sensor installed in the upper part of the chamber is not disturbed by the substrate shielding part, so that the position of the substrate can be accurately detected. In order to maximize process efficiency.

Hereinafter, with reference to the accompanying drawings will be described an embodiment according to the present invention in more detail. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention, and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you. Like reference numerals in the drawings refer to like elements.

1 is a cross-sectional view showing a plasma processing apparatus according to an embodiment of the present invention, Figure 2 is a layout view showing the installation position of the substrate sensor according to an embodiment of the present invention, Figure 3 is an enlarged cross-sectional view showing a region A of FIG. to be. 4 is a top plan view showing a substrate support according to an embodiment of the present invention. 5 is a partial perspective view illustrating a substrate lift according to an exemplary embodiment of the present invention, and FIG. 6 is an enlarged cross-sectional view illustrating the B region of FIG. 5 cut in the horizontal direction.

Referring to FIG. 1, the plasma processing apparatus according to the present exemplary embodiment includes a chamber 100 that provides a processing space and an upper region of the chamber 100 to protect an upper surface of the substrate G. A substrate shield 300 that injects the first gas to the upper surface of G) and a lower surface of the substrate shield 300 to support a lower surface of the substrate G, and a second gas to the lower surface of the substrate G; A bevel region of the substrate lift 600 and the substrate G and a lower surface area of the substrate G that lift the edges of the substrate G placed on the substrate support 200 and the substrate support 200 for spraying Plasma generating means 800 for generating a plasma.

The chamber 100 is manufactured in a detachable form including a cylindrical chamber body 101 having an open top and an empty inside, and a chamber lid 102 covering the upper part of the chamber body 101. Of course, the internal shape of the chamber body 101 may be variously changed to correspond to the shape of the substrate G to be processed, that is, the semiconductor wafer or the glass substrate, and the chamber body 101 and the chamber lid 102 may be changed. May be manufactured in one piece. A gate 120 is provided on one side wall of the chamber 100 to allow the substrate G to be introduced into the chamber 100, and an exhaust unit 130 for exhausting the inside of the chamber 100 below the other side wall. ) Is provided. The gate 120 is opened and closed so that the substrate G to be processed is drawn in or the processed substrate G is drawn out. In addition, the exhaust unit 130 serves to exhaust reaction by-products and processing gases generated during substrate processing to the outside of the chamber 100, and for this purpose, at least one exhaust port 131 and the exhaust port ( It is preferred to have a pumping portion 132 connected to 131 to form a pumping pressure. In this case, the exhaust port 131 may be formed in plural to control the exhaust speed and the exhaust flow.

The substrate shield 300 is provided at an upper portion of the chamber 100, and the upper electrode plate 310 formed of a conductive material, for example, aluminum (Al), and the lower shield plate formed of an insulating material, for example, ceramics. 320.

The electrode plate 310 is formed in a cylindrical shape having a side wall 311 protruding downward along the bottom edge thereof, the center of the upper surface is coupled to the lifting portion 330 is mounted on the upper wall of the chamber 100 It is comprised so that it can move up and down. At this time, in order to maintain the airtightness in the chamber 100, it is preferable that airtight means such as a bellows 331 is provided in the coupling area between the lifting unit 330 and the chamber 100. In addition, the body of the electrode plate 310 is provided with a cooling passage 312 for adjusting the temperature of the electrode plate 310 and the shielding plate 320, the cooling passage 312 is provided in the cooling water supply unit (not shown) Connected. As a result, while the cooling water provided from the cooling water supply unit circulates through the cooling channel 312, it is possible to prevent damage to the shielding plate 320 due to a sudden temperature rise. Of course, the cooling passage 312 may be formed in the shield plate 320 body.

The shielding plate 320 is inserted into an inner space of the downwardly protruding sidewall 311 formed by the electrode plate 310, and is manufactured to have a plate shape corresponding to the shape of the substrate G and having a predetermined thickness. The shielding plate 320 is positioned close to the top surface of the substrate G when the substrate G is cleaned, thereby preventing plasma from occurring in the top center region of the substrate G, thereby preventing the plasma from being generated. The device pattern formed in the area is prevented from being damaged.

In addition, the shielding plate 320 sprays the cleaning gas onto the upper surface of the substrate G when the bevel area of the substrate G is cleaned. To this end, the substrate shield 300 is formed on the shield plate 320 to clean the first sprayers 323 and 324 and the first sprayers 323 and 324 to spray the cleaning gas onto the upper surface of the substrate G. A first gas supply unit 340 for supplying a gas is further provided. The first injection parts 323 and 324 are preferably configured in the form of a shower head. That is, the body of the shielding plate 320 is provided with a plurality of injection holes 323 opened downward and the injection passage 324 in communication with the injection holes 323. In this case, the outlets of the injection holes 323 may be formed to face the edge direction of the substrate G so that the injection flow is maintained in the edge direction from the center of the substrate G. The shielding plate 320 according to the present embodiment includes a main shielding plate 321 having a concave groove formed in the lower center thereof, and an auxiliary shielding plate 322 accommodated and coupled to the groove, and thus, the main shielding plate 321 and the auxiliary shielding plate. A separation passage 322 forms the injection hole 323. Of course, the first injection units 323 and 324 may be changed in any form as long as the cleaning gas may be injected onto the upper surface of the substrate G.

On the other hand, the substrate sensor 410 for detecting the substrate is provided outside the upper wall of the chamber 100 described above. Specifically, the substrate sensor 410 is preferably installed at a vertical position corresponding to the edge of the substrate (G). The present embodiment forms a viewing port 420 (view port) through which light can pass through a portion of the upper wall of the chamber 100, and as shown in FIG. 2, along a circumferential direction corresponding to the edge of the substrate G. Three laser sensors 410a, 410b, 410c; 410 spaced apart at equal intervals are installed. Of course, the number of laser sensors 410a, 410b, 410c may be smaller or larger than this.

1 and 3, guide holes 313 for guiding light output from the laser sensor 410 are formed at the edge of the above-described substrate shield 300. Specifically, the guide hole 313 is preferably formed between the downwardly protruding sidewall 311 of the electrode plate 310 and the shielding plate 320, but penetrates only the sidewall 311 of the electrode plate 310. Or it may be formed through both the electrode plate 310 and the shielding plate 320. In addition, the laser sensor 410, the viewing area 420, and the guide hole 313 are disposed to coincide with each other on a vertical line corresponding to the edge of the substrate G, and the laser sensor 410, the viewing area 420, and The guide holes 313 are preferably provided in the same number.

The laser sensor 410 outputs light having a predetermined wavelength and receives the light reflected from the substrate G to detect the position of the substrate G. In general, the light output from the laser sensor 410 spreads as the distance increases, which may cause a decrease in sensitivity. As in this embodiment, the guide hole 313 is formed in the substrate shield 300. Thus, by lowering the light of the laser sensor 410, it is possible to prevent the degradation of the sensitivity. At this time, the inner diameter of the guide hole 313 is preferably formed in the range of 0.1 to 0.5mm, it is preferable that the upper and lower openings are formed larger than the inner diameter to facilitate the internal entry of the output light and the reflected light. Of course, the horizontal cross section of the guide hole 313 can be modified into any structure through which light can pass, such as a polygon as well as a circular shape.

1 and 4, the substrate support part 200 supports a central region of the bottom surface of the substrate G during the bevel cleaning of the substrate G. Referring to FIGS. To this end, the substrate support 200 is connected to the support plate 210 for supporting the central region of the lower surface of the substrate (G) and a support shaft for fixing the support plate 210 to the lower side of the chamber ( 220). The support plate 210 forms a protrusion S1 by protruding upward from the central region of the upper surface. At this time, the upper surface of the protrusion S1 is formed flat, the diameter of which is smaller than the diameter of the substrate (G). Accordingly, since the edge of the substrate G disposed on the protrusion of the support plate 210 is exposed to the outside and subjected to plasma treatment, the bevel area of the substrate G may be smoothly cleaned.

In addition, the substrate support part 200 sprays the cleaning gas to the lower surface of the substrate G when the lower surface of the substrate G is cleaned. To this end, the substrate support part 200 is installed on the support plate 210 to supply cleaning gas to the second injection parts 211 and 212 and the second injection parts 211 and 212 to inject cleaning gas to the lower surface of the substrate G. It further comprises a second gas supply unit 230. The second injection parts 211 and 212 of the present embodiment are preferably configured in the shower head method. That is, the body of the support plate 210 is provided with a plurality of injection nozzles 211 extending through the body and opened upward, and an injection passage 212 communicating with the injection nozzles 211. The injection passage 212 is provided inside the body of the support plate 210 and is connected to the second gas supply unit 230 through a communication passage extending outside the chamber 100 to receive the cleaning gas. The cleaning gas supplied to the injection flow path 212 is diffused therein, branched through the plurality of injection nozzles 211 connected to the injection flow path 212, and sprayed onto the lower surface of the substrate G. At this time, the spray nozzle 211 is preferably formed to increase the length of the protruding toward the outside from the center of the substrate support 210. Therefore, the cleaning gas is injected closer to the lower surface of the substrate G from the center to the edge of the substrate G, so that the cleaning gas is not concentrated in the center of the lower surface of the substrate G and is uniformly distributed throughout the lower surface of the substrate G. Can be. In addition, the injection nozzle 211 is installed in the concave portion S3 formed in the concave shape in the center region of the protrusion S1, so that the substrate G placed on the protrusion S1 by the nozzle 211 is damaged. Can be prevented.

Although not shown, at least one of cooling means and heating means may be installed in the body of the support plate 210 to control the process temperature. In addition, although not shown, a plurality of lift pins, preferably three or more lift pins, is provided on the body of the support plate 210 for loading and unloading the substrate G. It is installed to ascend through the body of the upper and lower, and the through-hole (214 of Figure 4) through which the lift pin is formed. In addition, the support plate 210 is fixed by the support shaft 220 for fixing the lower center of the lower wall of the chamber 100, otherwise it is of course connected to a separate lifting means can be moved up and down, of course .

1, 5, and 6, when cleaning the lower surface of the substrate G, the substrate G placed on the substrate support 200 moves to the upper portion of the substrate support 200 by the substrate lift 600. Can be. The substrate lift 600 includes a support ring 610 for mounting an edge of the substrate G, a support 630 and a support ring 610 spaced apart from the support ring 610, and the support ring 610. A plurality of support rods (620a, 620b, 620c; 620) fixed to the 630 and the lifting unit 640 for elevating the support 630.

The support ring 610 includes a horizontal portion 611 formed along the circumference of the substrate G, and a stepped portion 612 extending inwardly from the horizontal portion 611. The horizontal portion 611 may be formed in a single ring shape continuously connected along the circumference of the substrate G, or in a plurality of pieces in which a single ring is cut. The stepped portion 612 may be all formed around the entire circumference of the inside of the horizontal portion 611 or may be partially formed only on a part of the entire circumference of the inside of the horizontal portion 611. The inner diameter formed by the horizontal portion 611 of the support ring 610 is slightly larger than the diameter of the substrate G, and the inner diameter formed by the stepped portion 612 is slightly smaller than the diameter of the substrate G. Therefore, the edge of the substrate G may be placed on the stepped portion 612, and most of the lower surface area except the edge of the substrate G may be exposed to the outside. In particular, the side wall portion 613 formed between the horizontal portion 611 and the stepped portion 612 is preferably formed to be inclined downward. The inclined surface formed on the side wall portion 613 aligns the substrate G to move to the center of the support ring 610 when the substrate G is placed, and at the same time, the edge of the substrate G, which is susceptible to impact, is formed on the side wall portion ( 613) to prevent damage. In addition, the extended end 614 of the stepped portion 612 is preferably formed to be inclined downward in the inner direction. The inclined surface formed at the extended end 614 of the stepped portion 612 minimizes the area where the substrate G and the stepped portion 612 touch to prevent the thin film deposited on the substrate G from falling in an unwanted situation. At the same time, the cleaning gas can reach the bottom edge of the substrate G as close as possible, thereby improving the cleaning efficiency of the bottom edge of the substrate G. Of course, the inclined structure formed at the side wall portion 613 formed between the horizontal portion 611 and the stepped portion 612 or the extended end 614 of the stepped portion 612 is not only straight but also curved. For example, it may be formed in a parabolic form.

The support rod 620 is formed of three or more 620a, 620b, and 620c to distribute and support the load of the substrate G, and adjacent support rods 620a-620b, 620b-620c, and 620c-620a. It is desirable to be arranged to have the same separation distance. In this embodiment, three support rods 620a, 620b, and 620c are disposed to have an angle of 120 degrees. Of course, the number of the supporting rods 620a, 620b and 620c may be smaller or larger than this, and thus the angle between the supporting rods 620a, 620b and 620c may be adjusted larger or smaller than this. In addition, the support rod 620 may be formed integrally extending downward a predetermined length from the lower surface of the support ring 610, or extends a predetermined length upward from the upper surface of the support 630.

The support 630 is connected to the lower side of each of the support rods 620a, 620b and 620c, and one side of the support 630 is connected to the lifting unit 640. Accordingly, the support 630 and the support ring 610 may be raised and lowered integrally by the lifting unit 640. Since the support 630 is provided below the substrate support 200, it is preferable that the support 630 be manufactured in a circular ring shape having a hollow through which the support shaft 220 of the substrate support 200 can pass.

The elevating unit 640 includes an elevating shaft 641 connected to the lower surface of the support 630, and an elevating driving unit 642 for driving the elevating shaft 641. In this embodiment, since the elevating shaft 641 is connected to the elevating driving unit 642 on the outside through the lower wall of the chamber 100, the elevating shaft 641 and the chamber 100 for maintaining airtightness in the chamber 100. Is preferably provided with an airtight means such as a bellows 643. Here, the elevating shaft 641 and the elevating drive unit 642 can comprise any member for moving the support 630 up and down. That is, a cylinder using hydraulic or pneumatic pressure may be used, and an LM guide (Linear Motor Guide) may be used. Moreover, of course, these can be used in combination.

The substrate lift 600 having such a configuration includes a support rod having an upper surface edge of the support plate 210, that is, a support ring 610 placed on the stepped portion (S2 of FIG. 4) to be lifted through the edge of the support plate 210. 620 is installed to be moved upwards. To this end, as shown in FIG. 6, through holes (213 of FIG. 4) through which the support bar 620 penetrates are formed at an edge of the support plate 210. Of course, the support rod 620 may be lifted from the outside of the support plate 210, the through hole (213 of FIG. 4) may not be formed.

Preferably, the vent plate 700 is provided between the inner wall of the chamber 100 and the support plate 210 of the substrate support 200, and thus the inside of the chamber 100 is divided up and down. The vent plate 700 is formed in a circular plate shape having an open center, and a plurality of gas exhaust holes 710 spaced apart at equal intervals along the circumferential direction are formed to penetrate up and down. The vent plate 700 serves to control the pressure to uniformly distribute the processing gas introduced into the chamber 100 in the chamber 100, so that local concentration of plasma generated in the chamber 100 is generated. The phenomenon can be prevented.

Meanwhile, in the present embodiment, plasma may be generated in the bevel region of the substrate G or the lower surface region of the substrate G to activate the processing gas to increase the processing efficiency. To this end, various types of plasma generating means 800 may be used. In this case, it is effective to generate the plasma through the capacitively coupled plasma method that generates the plasma by using the substrate shield 300 and the substrate support 200 as two electrodes. To this end, the plasma generating means 800 may further include a plasma power supply for providing a high frequency voltage to the substrate support 200 and a bias voltage supply for providing a bias voltage to the substrate shield 300. In this case, the support plate body 210 of the substrate support 200 may be used as an electrode. However, the present invention is not limited thereto, and a plasma electrode plate may be separately provided in the support plate body 210. In addition, the plasma electrode plate may be located in the support plate body 210 or may be located on an upper surface of the support plate body 210. Of course, the present invention is not limited thereto, and plasma may be generated through an inductively coupled plasma method using an antenna.

A process of removing deposits in the bevel area of the substrate and the lower surface area of the substrate through the plasma processing apparatus according to the present embodiment configured as described above will be briefly described with reference to FIGS. 7 and 8. 7 is a schematic chamber showing the first processing operation of the plasma processing apparatus according to the embodiment of the present invention, and FIG. 8 is a schematic diagram showing the second processing operation of the plasma processing apparatus according to the embodiment of the present invention.

First, when the substrate G is drawn into the chamber 100 by the conveying means, a lift pin (not shown) is lifted from the surface of the substrate support 200 to receive the substrate G, and the substrate G is transferred. ) Is loaded on the upper surface of the substrate support 200 as the lift pin is lowered. At this time, the position of the substrate G is sensed by the substrate sensor 410 provided above the chamber 100 and provided to the conveying means, so that the substrate G is located at a desired position, that is, at the center of the substrate support part 200. Can be aligned exactly.

Subsequently, in the first processing operation as shown in FIG. 7, the substrate shield 300 is lowered to adjust the distance between the substrate shield 300 and the substrate G to be within an interval in which the plasma is inactivated, for example, 0.01 to 0.3 mm. . In this case, the center of the lower surface of the substrate G is placed on the protrusion of the substrate support 200, and the support ring 610 of the substrate lift 600 is placed on the edge of the substrate support 200, that is, on the stepped portion. The bevel area of the substrate G may be exposed. Thereafter, the cleaning gas is injected through the substrate shield 300, and the plasma P is generated in the bevel region of the substrate G through the plasma generating means 800. At this time, the cleaning gas activated by the plasma removes the deposits formed in the bevel region of the substrate G.

Subsequently, as shown in FIG. 8, in the second processing operation, the substrate shield 300 is raised to its original position and then the substrate lift 600 is raised to deactivate the plasma between the substrate G and the substrate shield 300. The spacing is adjusted in the range of, for example, 0.01 to 0.3 mm. In this case, since the substrate G is mounted on the support ring 610 of the substrate lift 600 having the center open, the entire surface of the substrate G except for the edge of the substrate G may be exposed. Thereafter, the cleaning gas is injected to the lower surface of the substrate G through the substrate support 200, and the plasma P is generated in the lower region of the substrate G through the plasma generating means 800. At this time, the cleaning gas activated by the plasma removes the deposits formed in the lower region of the substrate G.

Thereafter, when the substrate lift 600 is lowered to the original position and the substrate G is placed on the substrate support 200, the lift pin is raised again on the surface of the substrate support 200. The substrate G thus processed is unloaded on the substrate support 200 and transferred to the conveying means. Subsequently, the substrate G is drawn out of the chamber 100 by the conveying means and put into the subsequent process.

In the substrate processing process as described above, the substrate sensor 410 provides the position information of the substrate G to various control apparatuses so that the substrate G is positioned exactly where desired. For example, the position information of the substrate G is provided to the conveying means when loading and unloading the substrate G, and the position of the substrate G is placed on the substrate lift 600 when the bottom surface of the substrate G is cleaned. Provide information. In addition, since the present invention can clean both the bevel area and the lower surface area of the substrate G in one chamber, the installation space can be reduced and the process time can be shortened. In particular, the present invention is provided with a stepped portion for mounting the edge of the substrate (G) on the support ring 610 of the substrate lift 600, the extended end 613 of the stepped portion 612 is formed to be inclined downward in the inward direction do. Therefore, the area between the substrate G and the stepped portion 612 is minimized to prevent the deposit of the substrate G from falling in an undesired situation and at the same time the cleaning gas can reach the edge of the lower surface of the substrate G as close as possible. Therefore, the cleaning efficiency with respect to the lower edge of the board | substrate G can be improved further.

As mentioned above, although this invention was demonstrated with reference to the above-mentioned Example and an accompanying drawing, this invention is not limited to this, It is limited by the following claims. Therefore, it will be apparent to those skilled in the art that the present invention may be variously modified and modified without departing from the technical spirit of the following claims.

1 is a cross-sectional view showing a plasma processing apparatus according to an embodiment of the present invention.

2 is a layout view showing the installation position of the substrate sensor according to an embodiment of the present invention.

3 is an enlarged cross-sectional view illustrating a region A of FIG. 1.

Figure 4 is a top plan view showing a substrate support according to an embodiment of the present invention.

5 is a partial perspective view showing a substrate lift in accordance with an embodiment of the present invention.

FIG. 6 is an enlarged cross-sectional view of the region B of FIG. 5 cut in the horizontal direction.

7 is a chamber schematic diagram showing a first processing operation of the plasma processing apparatus according to the embodiment of the present invention;

8 is a chamber schematic diagram showing a second processing operation of the plasma processing apparatus according to the embodiment of the present invention;

<Explanation of symbols for the main parts of the drawings>

100: chamber 200: substrate support

210: electrode plate 220: shielding plate

300: substrate shield 410: substrate sensor

420: viewing area 600: substrate lift

610: support ring 620: support rod

630: support 700: vent plate

G: Substrate

Claims (8)

A chamber providing a processing space; A substrate shielding portion provided in an upper region of the chamber to protect an upper surface of the substrate and to spray a first processing gas on the upper surface of the substrate; A substrate support part provided below the substrate shielding part to support a lower surface of the substrate and to spray a second processing gas onto the lower surface of the substrate; And A substrate lift having a support ring for lifting and lifting an edge of the substrate placed on the substrate support; Including, The support ring, And a horizontal portion formed along a circumference of the substrate, and a step portion extending inwardly from the horizontal portion, wherein the step portion is inclined downward in an inner direction. The method according to claim 1, And the horizontal portion is formed in a single ring shape or a circular piece shape in which a plurality of single rings are cut. The method according to claim 1, The substrate lift, A support spaced apart from the bottom of the support ring; A plurality of support rods for fixing the support ring to the support; And Lifting unit for elevating the support; Plasma processing apparatus comprising a. The method according to claim 3, The support rod is provided through the edge of the substrate support portion plasma processing apparatus. The method according to claim 1, And a projection having a smaller diameter than the substrate is provided in a central region of the substrate support, and a depression is provided in an inner region of the projection. The method according to claim 5, The injection nozzle is a plasma processing apparatus that the protruding length is increased from the center of the protrusion toward the outside. The method according to claim 5, And a support ring of the substrate supporter in an outer region of the protrusion. The method according to any one of claims 1 to 7, Further comprising a substrate sensor installed on the upper side of the chamber for detecting the position of the substrate, And at least one guide hole is formed in the substrate shield to guide the light output from the substrate sensor.
KR1020080103063A 2008-10-21 2008-10-21 Plasma processing apparatus KR20100043844A (en)

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WO2014209492A1 (en) * 2013-06-26 2014-12-31 Applied Materials, Inc. Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber
KR101495288B1 (en) * 2012-06-04 2015-02-24 피에스케이 주식회사 An apparatus and a method for treating a substrate
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EP4117210A1 (en) 2010-05-11 2023-01-11 Electronics And Telecommunications Research Institute Method of transmitting downlink channel rank information through physical uplink shared channel
EP2387172A2 (en) 2010-05-11 2011-11-16 Electronics and Telecommunications Research Institute Method of transmitting downlink channel rank information through physical uplink shared channel
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CN105074869A (en) * 2013-06-26 2015-11-18 应用材料公司 Single ring design for high yield, substrate extreme edge defect reduction in ICP plasma processing chamber
WO2014209492A1 (en) * 2013-06-26 2014-12-31 Applied Materials, Inc. Single ring design for high yield, substrate extreme edge defect reduction in icp plasma processing chamber
KR20160100627A (en) * 2015-02-16 2016-08-24 주성엔지니어링(주) Substrate disposition apparatus including cooling device
KR20180059244A (en) * 2016-11-25 2018-06-04 세메스 주식회사 Apparatus and method for treating substrate
KR20180077949A (en) * 2016-12-29 2018-07-09 삼성전자주식회사 Substrate processing apparatus and substrate processing system including the same
CN109950193A (en) * 2017-12-21 2019-06-28 应用材料公司 Removable and removable processing accessory
KR20200005783A (en) * 2018-07-09 2020-01-17 주식회사 테스 Substrate supporting unit and Substrate processing apparatus having the same
KR102327270B1 (en) * 2020-12-03 2021-11-17 피에스케이 주식회사 Support unit, apparatus for treating a substrate and method for treating a substrate
KR20220078467A (en) * 2020-12-03 2022-06-10 피에스케이 주식회사 Method for treating a substrate
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