KR20100021228A - Method for manufacturing image sensor of semiconductor device - Google Patents
Method for manufacturing image sensor of semiconductor device Download PDFInfo
- Publication number
- KR20100021228A KR20100021228A KR1020080080026A KR20080080026A KR20100021228A KR 20100021228 A KR20100021228 A KR 20100021228A KR 1020080080026 A KR1020080080026 A KR 1020080080026A KR 20080080026 A KR20080080026 A KR 20080080026A KR 20100021228 A KR20100021228 A KR 20100021228A
- Authority
- KR
- South Korea
- Prior art keywords
- image sensor
- metal pad
- color filter
- semiconductor substrate
- manufacturing
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 37
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 230000008569 process Effects 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims abstract description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 2
- 230000000295 complement effect Effects 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 28
- 239000010408 film Substances 0.000 description 19
- 230000035945 sensitivity Effects 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012858 packaging process Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
BACKGROUND OF THE
In general, an image sensor is a semiconductor device that converts an optical image into an electrical signal. In a dual charge coupled device (CCD), individual metal-oxide-silicon (MOS) capacitors are very different from each other. A device in which charge carriers are stored and transported in a capacitor while in close proximity. Furthermore, CMOS (Complementary MOS) image sensors use CMOS technology, which uses control circuits and signal processing circuits as peripheral circuits, to make MOS transistors as many as the number of pixels, and to sequentially output them using them. It is a device that adopts a switching method for detecting output.
In manufacturing such various image sensors, efforts are being made to increase the photo sensitivity of the image sensor, and one of them is a light condensing technology. For example, the CMOS image sensor is composed of a light sensing element portion that senses light and a CMOS logic circuit portion that processes the detected light into an electrical signal to make data. Efforts have been made to increase the area occupied (commonly called 'Fill Factor'), but there is a limit to such efforts under a limited area because the logic circuit part cannot be removed.
On the other hand, in the conventional CMOS image sensor manufacturing process to form a metal pad in the logic circuit area and to protect the device from the external moisture and scratches on the resultant to deposit a device protective film and etching it to perform an open process of the metal pad after optical The color filter array is formed in the sensing element region.
Hereinafter, a process of manufacturing a CMOS image sensor according to the prior art will be briefly described with reference to FIGS. 1A to 1G.
In the drawing, reference numeral A denotes a photosensitive device region, and B denotes a logic circuit region.
First, as shown in FIG. 1A, a field insulating film (not shown) and at least one photosensitive device (not shown) and a logic circuit (not shown) are provided between the field insulating films for electrical insulation between the unit pixels of the image sensor. The
A metal material is deposited on the entire surface of the resultant and patterned to form a
Then,
Subsequently, as shown in FIG. 1B, the photosensitive device region A is masked and subjected to an etching process to open the device
Next, as shown in FIG. 1C, the
Subsequently, as shown in FIG. 1D, a color filter array is formed on the
Then, in FIG. 1E, a photoresist (not shown) is applied to the entire surface of the photosensitive device region A on which the
1F, a photoresist (not shown) for forming a microlens is applied and patterned by exposure and development to form a
Finally, in FIG. 1G, a heat treatment process is performed to reflow the
However, in the conventional image sensor manufacturing method, as shown in FIG. 1D, each color filter, that is, blue, green, and red color filters are formed to have different thicknesses. In order to compensate for this problem, a planarization layer must be formed, which increases the number of layers through which light passes through the photodiode, resulting in a loss of light.
As a result, in the conventional process technology, the sensitivity of the CMOS image sensor is inevitably lowered.
Accordingly, the present invention is to provide a method of manufacturing an image sensor that can improve the sensitivity of the CMOS image sensor by reducing the number of layers to pass through the light reaches the photodiode.
In addition, the present invention is to provide an image sensor manufacturing method that can shorten the overall process period by reducing the number of layers required for the CMOS image sensor manufacturing.
According to a preferred embodiment of the present invention, a process of forming a metal pad in a logic circuit region of a semiconductor substrate, a process of depositing a device protective film on an entire surface of the resultant product on which the metal pad is formed, and etching the device protective film Forming an open area in which a part of the surface of the metal pad is exposed, forming a color filter in the photosensitive device region of the semiconductor substrate, and forming a color filter as a hemispherical micro lens by applying a reflow process. It provides a method for manufacturing an image sensor of a semiconductor device comprising a process.
According to the present invention, by reducing the number of layers that light must pass through to the photodiode, the image sensitivity of the CMOS image sensor can be improved and the process can be simplified.
SUMMARY OF THE INVENTION The technical gist of the present invention is to form a color filter in a photosensitive device region of a semiconductor substrate, and to apply a reflow process to the color filter itself to form respective hemispherical microlenses for light concentration, whereby light By reducing the number of layers to reach the diode to improve the image sensitivity of the CMOS image sensor and implement the process simplification, it will be easy to achieve the object of the present invention from this technical idea.
Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.
2A to 2E are cross-sectional views illustrating a process of fabricating an image sensor of a semiconductor device according to a preferred embodiment of the present invention, wherein A represents a photosensitive device region and B represents a logic circuit region.
Hereinafter, a process of manufacturing an image sensor, for example, a CMOS image sensor, according to the present invention will be described in detail with reference to FIGS. 2A to 2E.
First, as shown in FIG. 2A, a field insulating film (not shown) and at least one light sensing element (not shown) and a logic circuit (not shown) are provided between the field insulating films for electrical insulation between unit pixels of the image sensor. The
A metal material is deposited on the entire surface of the resultant and patterned to form a
Then,
Subsequently, as shown in FIG. 2B, the photosensitive device region A is masked and an etching process is performed to open the device
Next, as shown in FIG. 2C, the
Subsequently, as shown in FIG. 2D, a color filter array is formed on the
Then, in FIG. 2E, each of the
As can be seen in FIG. 2E, since the direct reflow process is applied to each of the
That is, FIG. 2E is the biggest feature of the present embodiment. After the
As a result, the present invention eliminates the need for a flattening layer, a photoresist pattern, and the like, thereby greatly reducing the number of layers, and greatly reducing the total number of layers through which light must pass, thereby minimizing light loss. Could be implemented.
Meanwhile, the embodiments of the present invention have been described in detail, but the present invention is not limited to these embodiments, and various modifications may be made by those skilled in the art within the spirit and scope of the present invention described in the claims below. to be.
1A to 1G are cross-sectional views illustrating a process of manufacturing an image sensor of a conventional semiconductor device;
2A to 2E are cross-sectional views illustrating a process of manufacturing an image sensor of a semiconductor device according to a preferred embodiment of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080080026A KR20100021228A (en) | 2008-08-14 | 2008-08-14 | Method for manufacturing image sensor of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080080026A KR20100021228A (en) | 2008-08-14 | 2008-08-14 | Method for manufacturing image sensor of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20100021228A true KR20100021228A (en) | 2010-02-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080080026A KR20100021228A (en) | 2008-08-14 | 2008-08-14 | Method for manufacturing image sensor of semiconductor device |
Country Status (1)
Country | Link |
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KR (1) | KR20100021228A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190128877A (en) * | 2018-05-09 | 2019-11-19 | 삼성전자주식회사 | Image sensor and electronic device |
-
2008
- 2008-08-14 KR KR1020080080026A patent/KR20100021228A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190128877A (en) * | 2018-05-09 | 2019-11-19 | 삼성전자주식회사 | Image sensor and electronic device |
US11683599B2 (en) | 2018-05-09 | 2023-06-20 | Samsung Electronics Co., Ltd. | Image sensors and electronic devices |
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