KR20100015129A - Apparatus and method for depositing a film using chmical vapor deposition - Google Patents

Apparatus and method for depositing a film using chmical vapor deposition Download PDF

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Publication number
KR20100015129A
KR20100015129A KR1020080076051A KR20080076051A KR20100015129A KR 20100015129 A KR20100015129 A KR 20100015129A KR 1020080076051 A KR1020080076051 A KR 1020080076051A KR 20080076051 A KR20080076051 A KR 20080076051A KR 20100015129 A KR20100015129 A KR 20100015129A
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KR
South Korea
Prior art keywords
cvd
deposition
raw material
tepo
chamber
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Application number
KR1020080076051A
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Korean (ko)
Inventor
권하늘
Original Assignee
주식회사 동부하이텍
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Priority to KR1020080076051A priority Critical patent/KR20100015129A/en
Publication of KR20100015129A publication Critical patent/KR20100015129A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG

Abstract

CVD deposition apparatus and methods are provided. The CVD deposition apparatus is a deposition raw material storage container for storing the raw material for CVD deposition, is connected to the deposition raw material storage container through a first line, dissociating the deposition raw material material supplied through the first line through the RF plasma Remote Plasma Chamber (RPC), and a CVD chamber for receiving the deposition raw material dissociated by the RPC to form an interlayer insulating film on the wafer.

Description

Apparatus and Method for depositing a film using Chmical Vapor Deposition

The present invention relates to an apparatus and method for manufacturing a semiconductor device, and more particularly, to a CVD deposition apparatus and method.

In recent years, with the rapid development of information media such as computers, semiconductor device manufacturing technology is also rapidly developing. BACKGROUND OF THE INVENTION In the semiconductor device, technology has been developed to improve the degree of integration, miniaturization, operating speed, and the like. A PMD (Premetal Dielectric) film is an interlayer insulating film that separates a polysilicon gate from a metal wiring and has a gap fill.

Performance and gathering performance should be good and easy to planarize.

Silicon oxide film (SiO2), which is widely used as an interlayer insulating film, lacks the ability to fill the step formed by the polysilicon gate, and is a material for PMD film that replaces the silicon oxide film, and has excellent gap fill performance. Glass (PG) film is used, and such PSG (PhosphoSilica Glass) or BPSG (Borophosphosilicate Glass) film is deposited by Sub-Atmospheric Chemical Vapor Deposition (SACVD) or Atmospheric Pressure Chemical Vapor Deposition (APCVD).

The SACVD AMAT Centura 5200 CxZ forms a PSG film according to a constant equation (O 3 + TEPO + TEOS → PSG + volatile organics) at 200 torr, 550 ° C.

In this case, since the reaction materials TEOS and TEPO are liquid sources, the initial flow into the reaction chamber may be unstable.

1 shows a contact stringer due to the initial influx of unstable TEPO into the reaction chamber. Referring to FIG. 1, if the initial flow of TEPO flowing into the chamber is unstable, a contact stringer 30 may be generated in the contact region of the sidewall spacer 15 of the gate 10 and the contact 25.

In addition, when the initial flow flowing into the chamber is unstable, the P dopant of the PSG film to be formed is not uniform, and the P dopant deviation between the PSG film formed initially and the PSG film formed thereafter may increase.

An object of the present invention is to provide an apparatus for supplying a deposition source to a reaction chamber so that a P dopant deposits a uniform interlayer insulating film, and a method of forming an interlayer insulating film using the same.

The CVD deposition apparatus according to an embodiment of the present invention for achieving the above object is a deposition raw material storage container for storing the raw material for CVD (Chemicla Vapor Depositon) deposition, through the first line to the deposition raw material storage container And an RPC for dissociating the deposition raw material supplied through the first line through an RF plasma, and a CVD chamber supplied with the deposition raw material dissociated by the RPC to form an interlayer insulating film on the wafer.

The CVD deposition method according to another embodiment of the present invention for achieving the above object is the step of dissociating the radical ions using a radioactive plasma before supplying the CVD deposition raw material into the CVD chamber, the dissociated radical ions Supplying to the CVD chamber, and using the supplied dissociated radical ions to form an interlayer insulating film on a wafer in the CVD chamber.

The CVD deposition apparatus and method according to an embodiment of the present invention can prevent the generation of contact stringers by dissociating the deposition raw material before supplying it into the CVD chamber, to make the P-dopant of the PSG film uniform, and to deposit on the wafer. The thickness of the PSG film to be formed also has the effect that can be formed uniformly.

Hereinafter, the technical objects and features of the present invention will be apparent from the description of the accompanying drawings and the embodiments. Looking at the present invention in detail.

2 is a block diagram showing a CVD deposition apparatus including a CVD deposition raw material supply apparatus according to an embodiment of the present invention. Referring to FIG. 2, the CVD deposition apparatus includes a CVD deposition raw material supply apparatus 200 and a CVD chamber 225.

The CVD deposition raw material supply apparatus 200 includes a deposition raw material storage container 210, a gas supply unit 215, a remote plasma chamber 220, a first line 222, a second line 224, and a third Line 226.

The deposition raw material storage container 210 stores a raw material for CVD deposition, for example, triethyl phosphate (TEPO) 201 or tetraethly orthosilicate (TEOS) in a liquid state. The deposition source storage container 210 includes a diffuser wick 202, an analog level sensor 204, and a temperature sensor 206.

The diffuser wick 202 is connected to the first line 222 and inert gas (eg, He gas) supplied through the first line 222 to the TEPO 201 or TEOS in the liquid state. Supply. The analog level sensor 204 senses the height of the TEPO 201 in the liquid state stored in the deposition raw material storage container 210.

The temperature sensor 206 senses the temperature of the TEPO 201 or TEOS in the liquid state stored in the deposition raw material storage container 210.

The TEPO 201, or TEOS, in the liquid state stored in the deposition raw material storage container 210 is supplied to the RPC 220 through the second line 224.

The amount of TEPO 201 supplied to the RPC 220 through the second line may be adjusted by the amount of He gas supplied to the diffuser week 202. At this time, the gas supply unit 215 adjusts the amount of He gas supplied to the diffuser wick 202.

The RPC 220 uses the RF (Radio Frequency) plasma to supply the TEPO 201 (PO, C 2 H 5 O) 3 in the liquid state supplied through the second line 224 to obtain radical ions. Dissociate to the CVD chamber 225 through the third line 226.

The CVD chamber 225 forms an interlayer insulating film (eg, a PSG film) on a wafer using dissociated ions supplied from the CVD deposition raw material supply device 200.

FIG. 3 is a schematic diagram showing a reaction scheme in the RPC 220 and the CVD chamber 225 shown in FIG. 2. 2 and 3, in the RPC 220, the TEPO 201, PO (C 2 H 5 O) 3 in the liquid state supplied through the second line 224 may use the first reaction equation PO ( C 2 H 5 O) 3 + RF Plasma → POx + PHx + PO (C2H5) x) can be dissociated into radical ions. Where x represents the ratio of O or H to P or the ratio of (C2H5) to PO.

In CVD chamber 225 into dissociated radical ions supplied from the RPC 220 through the third line 226 and a route different from the third line into the CVD chamber 225. Supplied TEOS and ozone (O 3 ) Reaction, second reaction formula (POx + PHx + PO (C2H5) x + TEOS + O 3 → PSG films can be formed on the wafer 229 by means of PSG + by-products.

As shown in FIG. 3, according to an exemplary embodiment of the present invention, the RPC 220 is supplied before supplying the liquid TEPO, which is a raw material for forming an interlayer insulating film (eg, a PSG film), into the CVD chamber 225. Dissociate using RF plasma.

When the PSG film is formed using the dissociated TEPO by the reaction scheme 2, unlike the TEPO in the liquid state, it is possible to supply a raw material for forming a uniform interlayer insulating film into the CVD chamber 225. Therefore, it is possible to prevent the occurrence of the contact stringer 30 shown in FIGS. 1A and 1B due to the uneven initial inflow of TEPO in the liquid state into the CVD chamber 225.

In addition, the PSG formed at the beginning of the CVD process through the uniform supply of the interlayer insulating film may be formed so that the P-dopant is uniform. The P-dopant deviation may decrease between the second PSGs formed after the first PSG.

In addition, the thickness of the PSG film formed on the wafer by the reaction formula 2 using the dissociated TEPO uniformly supplied into the chamber is also uniform. In addition, since the TEOS is not dissociated in the CVD chamber 225, but the dissociated TEOS is supplied into the CVD chamber 225, the reaction may proceed quickly, thereby increasing the PSG deposition rate.

Referring to FIG. 3, a CVD deposition method according to an embodiment of the present invention is as follows.

First, CVD deposition raw materials (eg, TEPO) are dissociated into radical ions using an RF plasma before feeding into the CVD chamber 225.

For example, before supplying TEPO into the CVD chamber 225, the TEPO can be dissociated into radical ions by Scheme 1 in RPC 220.

Next, the dissociated radical ions are supplied into the CVD chamber 225. Thus, an interlayer insulating film is formed on the wafer 229 by the reaction equation 2 using the supplied radical ions and TEOS and ozone (O 3 ) supplied into the CVD chamber 225.

For example, a PSG film is formed on the wafer 229 using dissociated TEPO ions, TEOS, and ozone supplied into the CVD chamber 225.

Although embodiments of the present invention have described TEPO as a raw material for forming an interlayer insulating film, the present invention is not limited thereto, and the TEOS is also dissociated from the RPC 220 before dissociation into the CVD chamber 225. The TEOS may be supplied to the CVD chamber 225 to form the PSG film on the wafer.

The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes can be made without departing from the technical spirit of the present invention. It will be evident to those who have knowledge of. Therefore, the technical scope of the present invention should not be limited to the contents described in the detailed description of the specification but should be defined by the claims.

1 shows a contact stringer due to the initial influx of unstable TEPO into the reaction chamber.

2 is a block diagram showing a CVD deposition apparatus including a CVD deposition raw material supply apparatus according to an embodiment of the present invention.

FIG. 3 is a schematic diagram showing a reaction scheme in the RPC and CVD chambers shown in FIG. 2.

<Explanation of symbols for the main parts of the drawings>

210 is a vapor deposition raw material storage container, 215 a gas supply part;

220: RPC, 222: first line, 224: second line, 226: third line,

225: CVD chamber.

Claims (5)

A deposition raw material storage container for storing raw materials for CVD (Chemicla Vapor Depositon) deposition; A Remote Plasma Chamber (RPC) connected to the deposition source storage container through a first line and dissociating the deposition source material supplied through the first line through RF plasma; And And a CVD chamber supplied with the deposition raw material dissociated by the RPC to form an interlayer insulating film on a wafer. The method of claim 1, wherein the deposition raw material storage container, And a triethyl phosphate (TEPO) as a raw material for the CVD (Chemicla Vapor Depositon) deposition. The method of claim 2, wherein the RPC, And dissociating the TEPO into radical ions through the RE plasma. Dissociating the CVD deposition raw material into radical ions using an RF plasma before feeding it into the CVD chamber; Supplying dissociated radical ions into the CVD chamber; And Forming an interlayer insulating film on a wafer in the CVD chamber using the dissociated radical ions supplied. The method of claim 4, wherein The CVD deposition raw material is TEPO, The CVD deposition method, Supplying TEOS, and ozone (O 3 ) into the CVD chamber, Forming the interlayer insulating film, And dissociating TEPO ions, TEOS supplied into the CVD chamber, and ozone (O 3 ) to form a PSG film on the wafer.
KR1020080076051A 2008-08-04 2008-08-04 Apparatus and method for depositing a film using chmical vapor deposition KR20100015129A (en)

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KR1020080076051A KR20100015129A (en) 2008-08-04 2008-08-04 Apparatus and method for depositing a film using chmical vapor deposition

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