KR20100010827A - Light emitting diode and manufacturing method thereof - Google Patents
Light emitting diode and manufacturing method thereof Download PDFInfo
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- KR20100010827A KR20100010827A KR1020080071876A KR20080071876A KR20100010827A KR 20100010827 A KR20100010827 A KR 20100010827A KR 1020080071876 A KR1020080071876 A KR 1020080071876A KR 20080071876 A KR20080071876 A KR 20080071876A KR 20100010827 A KR20100010827 A KR 20100010827A
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Abstract
The present invention relates to a light emitting diode and a method of manufacturing the same, the light emitting diode having a first cladding layer, a light emitting layer, and a second cladding layer between electrodes, wherein the first cladding layer, the light emitting layer, and the second A substrate having a cladding layer formed therein, a groove formed by etching the second cladding layer and the light emitting layer to a predetermined depth so that a predetermined region of the first cladding layer is exposed, an insulating layer formed on the groove, and an upper portion of the insulating layer Including the electrode formed therein has the effect of improving the luminous efficiency of the light emitting diode.
Description
The present invention relates to a light emitting diode and a method of manufacturing the same, and more particularly, to remove the light emitting layer formed in the lower region of the electrode and to form an insulating layer between the region and the electrode light emitting diode which can improve the light emitting efficiency of the light emitting diode And to a method for producing the same.
In general, nitride semiconductors are direct-transition type semiconductors having a wide energy band gap, and are very useful materials for manufacturing light emitting devices capable of realizing light emission from visible light to ultraviolet light.
The research on such nitride semiconductors has been progressing to a great extent in the 1990s with the successful development of high quality crystal growth technology using low temperature GaN buffer layer on sapphire substrate and the development of Mg-doped p-type GaN.
In particular, the successful development of white light emitting diodes combining high brightness blue light emitting diodes and fluorescent organic materials has been rapidly applied in next-generation environment-friendly lighting, energy industries, and high density optical recording media.
However, the light efficiency of light emitting diodes is still low compared to conventional light sources. Therefore, more research is needed to improve the light efficiency.
GaN light emitting diodes generally have p-type and n-type electrodes formed on the same surface as the epitaxial layer because of the insulating property of the sapphire substrate. The p-type metal electrode formed on the upper surface of the mesa structure is composed of a thin transparent metal layer or a conductive oxide layer and a thick metal layer for wire bonding formed thereon. Therefore, the lower portion of the p-type metal electrode composed of a thick metal layer causes light loss due to photon absorption.
In addition, the p-type semiconductor is thin and its electrical conductivity is small, causing current crowding around the metal electrode. Due to this current bias, there is a problem in that more photons are formed under an electrode having a larger light loss.
Accordingly, in order to improve the light efficiency of the light emitting diode, an InGaN-GaN multi-quantum well (MQW) light emitting diode chip having a SiO 2 current blocking film under the region where the p-type metal electrode is located has been recently proposed. .{references; C. Huh, JM Lee, DJ Kim, and SJ Park, "Improvement in lightoutput efficiency of InGaN / GaN multiple-quantum well light-emitting diodes by current blocking layer," J. Appl. Phys., Vol. 92, pp. 2248-2250, 2002}
1 is a cross-sectional view for describing a light emitting diode having a conventional
As shown in FIG. 1, a conventional light emitting diode includes a
At this time, the
The
However, since the conventional light emitting diode further includes a manufacturing process for forming a current blocking film, there is a problem that a complicated manufacturing process and a high manufacturing cost are required. In addition, the light emitting layer under the region in which the current blocking film is formed does not receive current, thereby absorbing photons generated in other regions, and as a result, the efficiency of the light emitting diode is reduced.
On the other hand, US Patent No. 6,777,717 also as a method for minimizing the reduction of the light efficiency of the light emitting diode, by inclining the lower portion of the region where the p-type metal electrode is located by forming a reflective layer filled with a dielectric such as SiO 2 in the etched region A technique for easily extracting photons formed under the metal electrode to the outside has been proposed.
However, this technique still has a problem in that the current is not injected into the light emitting layer under the reflective film is formed to absorb photons generated in other areas to reduce the efficiency of the light emitting diode.
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to improve the light efficiency of a light emitting diode by removing the light emitting layer under the region where the electrode of the light emitting diode is located and forming an insulating layer between the region and the electrode. The present invention provides a light emitting diode and a method of manufacturing the same.
Another object of the present invention is to provide a light emitting diode and a method for manufacturing the same, which can reduce the manufacturing cost by simplifying the manufacturing process.
In order to achieve the above object, a first aspect of the present invention is a light emitting diode having a first cladding layer, a light emitting layer, and a second cladding layer between electrodes, wherein the first cladding layer, the light emitting layer, and A substrate on which a second clad layer is formed; A groove formed by etching the second clad layer and the light emitting layer to a predetermined depth so that a predetermined region of the first clad layer is exposed; An insulating layer formed on the groove; And to provide a light emitting diode comprising an electrode formed on the insulating layer.
Here, the size of the groove may be smaller, larger or the same as the size of the electrode, preferably, may be smaller or equal to the size of the electrode to improve the efficiency.
Preferably, the material forming the insulating layer may be SiO 2 or SiNx.
Preferably, a conductive transparent thin film may be further formed between the insulating layer and the electrode.
According to a second aspect of the present invention, in a method of manufacturing a light emitting diode having a first cladding layer, a light emitting layer, and a second cladding layer between electrodes,
Forming the first cladding layer, the light emitting layer, and the second cladding layer;
Forming a groove by etching the second clad layer and the light emitting layer to a predetermined depth so that a predetermined region of the first clad layer is exposed; And
It provides a light emitting diode manufacturing method comprising the step of forming an insulating layer and an electrode on the groove.
Here, the size of the groove may be formed to have a size smaller, larger or the same as the size of the electrode, preferably, may be formed to have a size smaller than or equal to the size of the electrode to improve the efficiency.
Preferably, the material forming the insulating layer may be SiO 2 or SiNx.
Preferably, the method may further include forming a conductive transparent thin film interposed between the insulating layer and the electrode.
According to the light emitting diode of the present invention and a method of manufacturing the same as described above, the light efficiency of the light emitting diode is formed by removing the light emitting layer for a predetermined region under the region where the electrode of the light emitting diode is located and forming an insulating layer between the region and the electrode. There is an advantage to improve.
In addition, the present invention has the advantage of reducing the manufacturing cost by simplifying the manufacturing process.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the present invention illustrated below may be modified in many different forms, and the scope of the present invention is not limited to the embodiments described below. The embodiments of the present invention are provided to more completely explain the present invention to those skilled in the art.
2 is a schematic cross-sectional view of a light emitting diode according to an embodiment of the present invention.
Referring to FIG. 2, a light emitting diode according to an embodiment of the present invention is largely provided with a
Here, the
The
In this case, a predetermined depth formed by removing the
Here, the size of the groove (H) may be formed to have a size smaller, larger, or the same as the size of the
The groove H may be formed by sequentially etching the
The first and
For example, the first and
When the
Accordingly, by forming the
On the other hand, in order to increase the current injection area and not adversely affect the brightness, before forming the
Next, a method of manufacturing a light emitting diode according to an embodiment of the present invention will be described in detail.
Referring to FIG. 2, a first clad layer is formed on a substrate (eg, a sapphire substrate) 200 using metal organic chemical vapor deposition (MOCVD), liquid epitaxial (LPE), molecular beam epitaxial (MBE), or the like. An epi substrate on which the 210, the
Subsequently, a predetermined region of the second
At this time, the size of the groove (H) may be formed to have a size smaller, larger or the same as the size of the
Thereafter, for example, an insulator thin film, that is, an insulating
Thereafter, for example, the conductive transparent thin film, that is, the
Finally, first and
3 is a schematic cross-sectional view of a light emitting diode according to another exemplary embodiment of the present invention, and illustrates a structure in which the
Referring to FIG. 3, the light emitting diode according to another embodiment of the present invention is largely the same as that of FIG. 2 described above, with the
However, in FIG. 3, unlike FIG. 2, the
Meanwhile, in a predetermined region of the
Here, the size of the groove (H) may be formed to have a size smaller, larger, or the same as the size of the
The groove H may be formed by sequentially etching the
In this case, in order to increase the current injection area and not adversely affect the brightness, before the
In this embodiment, the light emitting diode has a structure in which an electrode is formed on the p-type GaN cladding layer and the n-type GaN cladding layer formed by etching the light emitting layer in a predetermined region, and a structure in which the electrode is formed on the lower surface of the light emitting diode, that is, on the lower surface of the semiconductor substrate. Although the present invention has been described as an example, the application of the present invention is applicable to any light emitting diode formed on a substrate including first and second cladding layers, a light emitting layer, and the like provided between the electrodes. That is, the present invention should be understood as being applicable to any structure in which a potential difference is formed in the light emitting layer by the electrodes or a current is injected to generate the light emitting phenomenon.
Although a preferred embodiment of the light emitting diode according to the present invention and a method for manufacturing the same has been described above, the present invention is not limited thereto, and various modifications are made within the scope of the claims and the detailed description of the invention and the accompanying drawings. It is possible to implement and this also belongs to the present invention.
1 is a cross-sectional view illustrating a conventional light emitting diode having a current blocking film.
2 is a schematic cross-sectional view of a light emitting diode according to an embodiment of the present invention.
3 is a schematic cross-sectional view of a light emitting diode according to another embodiment of the present invention.
Claims (8)
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KR1020080071876A KR20100010827A (en) | 2008-07-23 | 2008-07-23 | Light emitting diode and manufacturing method thereof |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102208506A (en) * | 2010-03-30 | 2011-10-05 | 厦门乾照光电股份有限公司 | Buried high-brightness light emitting diode structure |
WO2011142619A2 (en) * | 2010-05-13 | 2011-11-17 | 주식회사 에피밸리 | Group iii nitride semiconductor light emitting element |
US8314422B2 (en) | 2010-04-08 | 2012-11-20 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package and lighting system |
US8421106B2 (en) | 2009-09-10 | 2013-04-16 | Lg Innotek Co., Ltd. | Light emitting device, system and package |
KR20160085069A (en) * | 2015-01-07 | 2016-07-15 | 엘지이노텍 주식회사 | Light emitting device and light emitting device package |
KR20210070834A (en) * | 2019-12-05 | 2021-06-15 | 웨이브로드 주식회사 | Light emitting device |
-
2008
- 2008-07-23 KR KR1020080071876A patent/KR20100010827A/en not_active Application Discontinuation
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8421106B2 (en) | 2009-09-10 | 2013-04-16 | Lg Innotek Co., Ltd. | Light emitting device, system and package |
CN102208506A (en) * | 2010-03-30 | 2011-10-05 | 厦门乾照光电股份有限公司 | Buried high-brightness light emitting diode structure |
US8314422B2 (en) | 2010-04-08 | 2012-11-20 | Lg Innotek Co., Ltd. | Light emitting device, light emitting device package and lighting system |
WO2011142619A2 (en) * | 2010-05-13 | 2011-11-17 | 주식회사 에피밸리 | Group iii nitride semiconductor light emitting element |
WO2011142619A3 (en) * | 2010-05-13 | 2012-04-26 | 주식회사 에피밸리 | Group iii nitride semiconductor light emitting element |
KR20160085069A (en) * | 2015-01-07 | 2016-07-15 | 엘지이노텍 주식회사 | Light emitting device and light emitting device package |
KR20210070834A (en) * | 2019-12-05 | 2021-06-15 | 웨이브로드 주식회사 | Light emitting device |
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