KR20090055268A - Apparatus of processing wafers - Google Patents

Apparatus of processing wafers Download PDF

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Publication number
KR20090055268A
KR20090055268A KR1020070122102A KR20070122102A KR20090055268A KR 20090055268 A KR20090055268 A KR 20090055268A KR 1020070122102 A KR1020070122102 A KR 1020070122102A KR 20070122102 A KR20070122102 A KR 20070122102A KR 20090055268 A KR20090055268 A KR 20090055268A
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KR
South Korea
Prior art keywords
chuck
substrate processing
wafer
substrate
protrusion
Prior art date
Application number
KR1020070122102A
Other languages
Korean (ko)
Inventor
김이정
Original Assignee
세메스 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 세메스 주식회사 filed Critical 세메스 주식회사
Priority to KR1020070122102A priority Critical patent/KR20090055268A/en
Publication of KR20090055268A publication Critical patent/KR20090055268A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A substrate treating apparatus is provided to minimize damage to a substrate by expanding a protective material into a top surface exposed of a body part. A chuck(100) is installed inside a process chamber, and supports a substrate. A plurality of chuck pins(110) is positioned on a top surface of the chuck, and supports the substrate. The chuck pin includes a body part(112), a protrusion part(114), and a protective material(116). The chuck is contacted with a bottom surface of the body part. The protrusion part is protruded in the top surface of the body part, and supports a side of the substrate. The protective material surrounds the protrusion part. The body part and the protrusion part are made of ceramics. The protrusion part is formed in an end of the body part. The substrate is loaded between the protrusion part and the end of the body part. A top surface of a part of the body part supports a bottom surface of the substrate.

Description

Substrate processing apparatus {Apparatus of processing wafers}

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having a chuck pin capable of improving productivity.

Generally, wafer processing processes in the semiconductor manufacturing process include photoresist coating, developing & developing, etching, chemical vapor deposition and ashing. In order to remove various contaminants attached to the substrate in the process of performing each of the various steps, there is a cleaning process using chemical or pure water (Wet Cleaning Process). Various kinds of substrate processing apparatuses are used to perform such various processes.

This substrate processing process mainly proceeds in the process chamber, and the substrate is seated on the chuck formed inside the process chamber. At this time, a plurality of chuck pins formed on the chuck support the side of the substrate.

However, the chuck pin may be damaged when the chemical liquid process or the plasma process is performed. If the chuck pin is damaged, impurities caused by the corroded or damaged chuck pin may be generated, which may cause a defect, and the chuck pin may be deformed to prevent smooth operation of the process, thereby lowering productivity.

An object of the present invention is to provide a substrate processing apparatus having a chuck pin capable of improving productivity.

Problems to be solved by the present invention are not limited to the above-mentioned problems, and other problems not mentioned will be clearly understood by those skilled in the art from the following description.

One aspect of the substrate processing apparatus of the present invention for achieving the above object is a chuck on which the wafer is seated and a plurality of chuck pins are formed on the upper surface of the chuck to support the wafer, the body portion is in contact with the chuck And a chuck pin protruding from an upper surface of the body part to support a side surface of the wafer, and a chuck pin including a protective material surrounding the protrusion, wherein the body part and the protrusion are formed of ceramic.

Other specific details of the invention are included in the detailed description and drawings.

According to the substrate processing apparatus of the present invention as described above has the following effects. That is, the substrate processing apparatus as described above can improve the productivity by reducing the defective rate caused by the deformation or damage of the chuck pin and proceeding the process more efficiently.

Advantages and features of the present invention and methods for achieving them will be apparent with reference to the embodiments described below in detail with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the present embodiments are intended to complete the disclosure of the present invention, and the general knowledge in the art to which the present invention pertains. It is provided to fully convey the scope of the invention to those skilled in the art, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

Although the first, second, etc. are used to describe various elements, components and / or sections, these elements, components and / or sections are of course not limited by these terms. These terms are only used to distinguish one element, component or section from another element, component or section. Therefore, the first device, the first component, or the first section mentioned below may be a second device, a second component, or a second section within the technical spirit of the present invention.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. In this specification, the singular also includes the plural unless specifically stated otherwise in the phrase. As used herein, “comprises” and / or “comprising” refers to the presence of one or more other components, steps, operations and / or elements. Or does not exclude additions.

Unless otherwise defined, all terms (including technical and scientific terms) used in the present specification may be used in a sense that can be commonly understood by those skilled in the art. In addition, the terms defined in the commonly used dictionaries are not ideally or excessively interpreted unless they are specifically defined clearly.

Hereinafter, a substrate processing apparatus according to a first embodiment of the present invention will be described with reference to FIGS. 1 to 3B. 1 is a block diagram illustrating a substrate processing apparatus according to a first embodiment of the present invention. FIG. 2 is an enlarged view of A of FIG. 1. 3A is a cross-sectional view of the chuck pin of the substrate processing apparatus of FIG. 1. 3B is a perspective view of the chuck pin of the substrate processing apparatus of FIG. 1.

 1 to 3B, the substrate processing apparatus according to the first embodiment of the present invention includes a chuck 100, a rotation shaft 150, a first driving unit 180, a substrate processing liquid supply unit 200, and a bowl 300. ), A recovery unit 400, a fluid supply unit 500, and the like.

The chuck 100 supports the wafer W and may rotate the wafer W. FIG. The chuck 100 may be disc shaped. A plurality of support pins 120 supporting the lower portion of the wafer W are formed on the chuck 100 to support the lower surface of the wafer W.

In addition, a plurality of chuck pins 110 are formed on the chuck 100 to support the side surface of the wafer W when the chuck 100 rotates. The chuck pin 110 is formed to protrude on the body portion 112 and the body portion 112 which are in contact with the lower surface of the chuck 100 to surround the protrusion 114 and the protrusion 114 which are in contact with the side surface of the wafer W. Protective material 116.

Protruding portion 114 is formed to contact one side end of the upper surface of the body portion (112). Therefore, the protrusion 114 may or may not contact the wafer W by the rotation of the chuck pin 110. Therefore, by rotating the chuck pin 110, it is possible to fix or not fix the wafer (W). At the beginning of the process, the protrusion 114 is placed in the outward direction of the chuck 100 and the wafer W is seated on the support pin 120. Subsequently, the chuck pin 110 is rotated to bring the protrusion 114 and the wafer W into contact with each other to align the position of the wafer W, and to fix the side surface of the wafer W. Therefore, even if the chuck 100 rotates, it is possible to prevent the wafer W from being separated from the chuck 100.

In this case, the body 112 and the protrusion 114 may be formed of, for example, ceramic. The body portion 112 and the protrusion 114 formed of ceramic have high strength, strong acid resistance and heat resistance, and are not easily damaged in a process using a chemical solution and a process using a plasma. That is, the chuck pin 110 formed of ceramic may be used semi-permanently, and is not deformed or damaged. Therefore, when the chuck pin 110 is formed of a ceramic, it is possible to prevent a defect or a decrease in productivity due to damage of the chuck pin 110, the productivity can be improved.

On the other hand, the protective material 116 may be formed in a cap shape to surround the protrusion 114, for example, may be formed of a resin-based, such as PolyChloroTriFluoroEthylene (PCTFE) or PolyEtherKetone (PEEK). Since the protective material 116 is in direct contact with the wafer W, if the strength is too strong, the wafer W may be damaged. Therefore, it is possible to form a resin series such as PCTFE or PEEK, thereby preventing damage to the wafer (W). In addition, by forming the protective material 116 in a cap shape, it can be easily separated from the protrusion 114. Therefore, only the protective material 116 can be replaced periodically. That is, since only the protective material 116 may be replaced without replacing the entire chuck pin 110, the cost may be further reduced.

The first driver 180 rotates the rotation shaft 150 connected to the support 101 of the chuck 100, and thus, the wafer W mounted on the chuck 100 is rotated. That is, the rotation shaft 150 transmits the driving force of the first drive unit 180 to the chuck 100. Rotating shaft 150 has a hollow shaft (hollow shaft) form, the inside is provided with a fluid supply line 540 to be described later. Taking the configuration of the first driving unit 180 as an example, the first driving unit 180 may include a driving motor, a driving pulley, a belt, and the like. The drive motor generates power by power applied from the outside, and the drive pulley and the rotating shaft 150 connected to the drive motor are connected through the belt. The rotational force generated by the drive motor is transmitted to the rotating shaft 150 through the belt, the rotational speed of the rotating shaft 150 can be adjusted by adjusting the diameter ratio of the driving motor and the rotating shaft 150.

The substrate processing liquid supply unit 200 supplies the substrate processing liquid to the processing surface of the substrate W seated on the chuck 100 during the process. The substrate processing liquid is for removing foreign substances and unnecessary films remaining on the processing surface of the substrate W, for example. For example, the substrate treating solution is mainly an acid solution, and at least one selected from the group consisting of sulfuric acid (H 2 SO 4), nitric acid (HNO 3), phosphoric acid (H 3 PO 4), hydrofluoric acid (HF), and SC-1 (Standard Clean-1) solution. It may be a solution of. The substrate processing liquid supply unit 200 includes a nozzle 210, a substrate processing liquid storage unit 220, a valve 230, and a substrate processing liquid supply line 240. The substrate processing liquid storage unit 220 is a tank for storing the substrate processing liquid, and the valve 230 may not supply the substrate processing liquid or supply the substrate processing liquid through on / off controlled by the controller 700. . The substrate processing liquid supply line 240 is a line for transferring the substrate processing liquid from the substrate processing liquid storage unit 220 to the nozzle 210. The nozzle 210 is disposed above the substrate W, and supplies the substrate processing liquid from the upper portion of the substrate W. As shown in FIG.

The bowl 300 prevents the substrate processing liquid from scattering to the outside from the wafer W due to the rotation of the chuck 100 during the process. Since an acid solution is mainly used as the substrate treating liquid, the bowl 300 is installed around the chuck 100 to protect peripheral equipment. The bowl 300 has an opening through which the wafer W can enter and exit, and is disposed to surround the chuck 100.

The recovery unit 400 recovers the substrate processing liquid used in the process again. The recovery unit 400 may include a recovery tank 420, a valve 430, and a recovery line 440.

The fluid supply unit 500 supplies the fluid to the bottom surface of the substrate W supported by the chuck 100. When the substrate processing liquid is viscous, the substrate processing liquid flows through the substrate W and is buried in the chuck 100 supporting the substrate W. The buried substrate processing liquid may become a fume and contaminate the substrate processing apparatus. Therefore, the fluid for removing the substrate processing liquid from the bottom of the chuck 100 is supplied. Here, the fluid used may be, for example, pure water (DIW). The fluid supply unit 500 may include a bag nozzle 510, a fluid storage unit 520, a valve 530, and a fluid supply line 540. The fluid storage unit 520 is a tank for storing fluid, and the valve 530 may supply or not supply fluid through on / off control of the control unit 700. The fluid supply line 540 is a line for transferring the fluid from the fluid reservoir 520 to the bag nozzle 510. The back nozzle 510 is provided in the chuck 100, and supplies the substrate processing liquid from the bottom surface of the substrate W. As shown in FIG. In the drawing, the back nozzle 510 is illustrated as being installed at the center of the chuck 100, but is not limited thereto.

Hereinafter, a substrate processing apparatus according to a second embodiment of the present invention will be described with reference to FIGS. 4A and 4B. 4A is a cross-sectional view of the chuck pin of the substrate processing apparatus according to the second embodiment of the present invention. 4B is a perspective view of a chuck pin of the substrate processing apparatus according to the second embodiment of the present invention.

4A and 4B, the substrate processing apparatus according to the second embodiment of the present invention differs from the first embodiment in that the protective material 136 of the chuck pin 130 is formed in a ring shape. That is, the chuck pin 130 of the substrate processing apparatus according to the second embodiment of the present invention includes a body 132, a protrusion 134, and a protective material 136 formed to surround the protrusion 134. In addition, the body portion 132 and the protrusion 134 may be formed of, for example, ceramic, and the protective material 116 may be formed of a resin series such as, for example, PolyChloroTriFluoroEthylene (PCTFE) or PolyEtherKetone (PEEK). have.

Hereinafter, a substrate processing apparatus according to a second embodiment of the present invention will be described with reference to FIGS. 5 to 7B. 5 is a block diagram illustrating a substrate processing apparatus according to a third embodiment of the present invention. FIG. 6 is an enlarged view of B of FIG. 5. 7A is a cross-sectional view of the chuck pin of the substrate processing apparatus of FIG. 5. 7B is a perspective view of the chuck pin of the substrate processing apparatus of FIG. 5.

5 to 7B, the substrate processing apparatus according to the third embodiment of the present invention differs from the first embodiment in that it does not include the support pin (120 of FIG. 1) and the protrusion of the chuck pin 150. 154 does not contact the end of the body portion 152.

That is, the protrusion 154 of the substrate processing apparatus according to the third embodiment of the present invention is formed to be spaced apart from the end of the body portion 152 by a predetermined interval, and thus, between the protrusion 154 and the end of the body portion 152. The wafer W is allowed to rest on the substrate. Therefore, the lower surface of the wafer W is supported by a part of the upper surface of the body portion 152. Therefore, according to the third exemplary embodiment of the present invention, the wafer W can be stably fixed even without the support pin 120 (in FIG. 1).

That is, the chuck pin 150 of the substrate processing apparatus according to the third embodiment of the present invention supports the lower surface of the wafer W to a part of the upper surface of the body portion 152, and a protective material 156 formed on the side surface of the protrusion 154. ) To support the side surface of the wafer (W). 6 to 7B, the protective material 156 is extended to the exposed upper surface of the body part 152. This is intended to minimize damage to the wafer W by forming all of the areas in contact with the wafer W with the protective material 156, but is not limited thereto. In addition, the protective material 156 is shown not to cover the upper surface of the protrusion 154, but is not limited thereto.

Hereinafter, a substrate processing apparatus according to a fourth embodiment of the present invention will be described with reference to FIGS. 8A and 8B. 8A is a cross-sectional view of the chuck pin of the substrate processing apparatus according to the fourth embodiment of the present invention. 8B is a perspective view of a chuck pin of the substrate processing apparatus according to the fourth embodiment of the present invention.

8A and 8B, the substrate processing apparatus according to the fourth embodiment of the present invention differs from the third embodiment of the present invention in that the protective material 176 of the chuck pin 170 is disposed on the upper surface of the body portion 172. It is not formed, it is formed in a cap shape to cover only the protrusion 174.

As described in the first to fourth embodiments of the present invention, the protective material may be formed in a cap shape or a ring shape, or may be formed to cover the upper surface of the body portion as in the third embodiment. That is, the present invention may include all of the structures of the various protective materials that can be applied, as long as it does not impair the idea of the present invention while covering the side surface of the protrusion.

Although embodiments of the present invention have been described above with reference to the accompanying drawings, those skilled in the art to which the present invention pertains may implement the present invention in other specific forms without changing the technical spirit or essential features thereof. I can understand that. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

1 is a block diagram illustrating a substrate processing apparatus according to a first embodiment of the present invention.

FIG. 2 is an enlarged view of A of FIG. 1.

3A is a cross-sectional view of the chuck pin of the substrate processing apparatus of FIG. 1.

3B is a perspective view of the chuck pin of the substrate processing apparatus of FIG. 1.

4A is a cross-sectional view of the chuck pin of the substrate processing apparatus according to the second embodiment of the present invention.

4B is a perspective view of a chuck pin of the substrate processing apparatus according to the second embodiment of the present invention.

5 is a block diagram illustrating a substrate processing apparatus according to a third embodiment of the present invention.

FIG. 6 is an enlarged view of B of FIG. 5.

7A is a cross-sectional view of the chuck pin of the substrate processing apparatus of FIG. 5.

7B is a perspective view of the chuck pin of the substrate processing apparatus of FIG. 5.

8A is a cross-sectional view of the chuck pin of the substrate processing apparatus according to the fourth embodiment of the present invention.

8B is a perspective view of a chuck pin of the substrate processing apparatus according to the fourth embodiment of the present invention.

 (Explanation of symbols for the main parts of the drawing)

100: chuck 110, 130, 150, 170: chuck pin

112, 132, 152, 172: body parts 114, 134, 154, 174: protrusions

116, 136, 156, 176: Protective material 120: Support pin

150: rotation axis 180: first drive unit

200: substrate processing liquid supply unit 300: bowl

400: recovery part 500: fluid supply part

Claims (2)

A chuck formed in the process chamber to seat the wafer; And A plurality of chuck pins formed on the upper surface of the chuck to support the wafer, the chuck pin including a body portion in contact with the lower surface of the chuck, a protrusion protruding from the upper surface of the body portion to support the side surface of the wafer, and a protective material surrounding the protrusion. Wherein the body portion and the protrusion are formed of ceramic. The method of claim 1, And the protrusion is spaced apart from the end of the body portion by a predetermined interval, and the wafer is seated between the protrusion and the end of the body portion to support a lower surface of the wafer on a portion of the body portion.
KR1020070122102A 2007-11-28 2007-11-28 Apparatus of processing wafers KR20090055268A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190060741A (en) * 2019-05-24 2019-06-03 세메스 주식회사 Substrate treating apparatus
US20200391259A1 (en) * 2019-06-14 2020-12-17 Kctech Co., Ltd. Substrate holder and substrate support device including the substrate holder

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190060741A (en) * 2019-05-24 2019-06-03 세메스 주식회사 Substrate treating apparatus
US20200391259A1 (en) * 2019-06-14 2020-12-17 Kctech Co., Ltd. Substrate holder and substrate support device including the substrate holder

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