KR20090029407A - Support member and apparatus for treating substrate with the same - Google Patents

Support member and apparatus for treating substrate with the same Download PDF

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Publication number
KR20090029407A
KR20090029407A KR1020070094608A KR20070094608A KR20090029407A KR 20090029407 A KR20090029407 A KR 20090029407A KR 1020070094608 A KR1020070094608 A KR 1020070094608A KR 20070094608 A KR20070094608 A KR 20070094608A KR 20090029407 A KR20090029407 A KR 20090029407A
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KR
South Korea
Prior art keywords
substrate
chucking
contact portion
wafer
support member
Prior art date
Application number
KR1020070094608A
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Korean (ko)
Inventor
김봉주
이택엽
Original Assignee
세메스 주식회사
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Application filed by 세메스 주식회사 filed Critical 세메스 주식회사
Priority to KR1020070094608A priority Critical patent/KR20090029407A/en
Publication of KR20090029407A publication Critical patent/KR20090029407A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

The present invention relates to a member for supporting a substrate and an apparatus for treating the substrate having the same. The support member according to the present invention includes chucking pins for chucking and unchucking a portion of an edge of the substrate, and each of the chucking pins is set such that the height of the outer peripheral surface of the contact portion of the chucking pin that contacts the edge side of the substrate is equal to the thickness of the substrate. do. In addition, an upper portion of the contact portion is provided with a release preventing portion for preventing the separation of the wafer, the connection portion of the contact portion and the anti-separation portion is rounded. According to the present invention, the chucking pins effectively fix the substrate during the process to prevent the substrate from being separated from the support member during the process, and prevent the treatment liquid used during the process from remaining on the chucking pins.

Description

SUPPORT MEMBER AND APPARATUS FOR TREATING SUBSTRATE WITH THE SAME}

The present invention relates to a support member and a substrate processing apparatus having the same, and more particularly, to a support member having a chucking pin for chucking and unchucking a substrate and an apparatus for treating the substrate.

In general, semiconductor integrated circuit chips are manufactured by iterative or selective performance of unit processes such as deposition, photolithography, etching, chemical mechanical polishing, cleaning, drying and the like. Among these unit processes, a cleaning process is a process of removing foreign substances or unnecessary films attached to the surface of the semiconductor substrate during each unit process.

Among the apparatuses for performing the cleaning process, the sheet type substrate cleaning apparatus cleans the substrate by spraying the processing fluid onto the processing surface of the substrate while rotating the single wafer at a high speed. Typical single wafer spin cleaning apparatus includes a housing, a support member, and a nozzle. The housing has a cylindrical container shape with an open top, and the support member supports the substrate inside the housing during the process. The nozzle sprays the cleaning liquid onto the substrate rotated by the support member during the process. In the cleaning process, the support member is rotated to rotate the substrate at a predetermined rotational speed, so that the support member is provided with means for preventing the substrate from being separated from the support member by centrifugal force. As the substrate fixing means, a method of fixing a substrate by using a plurality of chucking pins on a supporting member is widely used.

In the supporting member having the chucking pins, the chucking pins fix the substrate by chucking a part of the edge of the substrate during the process. However, a method of fixing a substrate by using general chucking pins does not effectively fix the substrate in the process, so that the substrate is separated from the support member in the process.

In addition, in the substrate cleaning apparatus having general chucking pins, the processing liquid used in the process remains around the chucking pins, thereby reducing the cleaning efficiency of the substrate. In particular, the phenomenon that the treatment liquid is accumulated in the contact portion of the chucking pin in contact with the substrate, the phenomenon that the substrate edge portion in contact with the chucking pin is contaminated by the treatment liquid remaining on the chucking pin.

In addition, since the substrate cleaning apparatus having the general chucking pins rotates the substrate fixed by the chucking pins at a high speed during the process, damage occurs at the edges of the substrate chucked by the chucking pins.

The present invention provides a support member and a substrate processing apparatus having the same to prevent the substrate from being separated from the support member.

The present invention provides a support member for preventing the treatment liquid from remaining in the chucking pin and a substrate processing apparatus having the same.

The present invention provides a support member for preventing the substrate edge portion from being damaged by the chucking pin and a substrate processing apparatus having the same.

The support member according to the present invention for solving the above problems is disposed along the edge of the support surface of the spin head and the support surface facing the processing surface of the substrate, a plurality of chucking a portion of the edge of the substrate during the process Chucking pins, wherein the chucking pins are formed to extend upwardly from an upper end of the contact portion and a contact portion having an outer circumferential surface contacting the side surface of the substrate during the process, so that a substrate contacted with the outer circumferential surface of the contact portion during the process is removed from the contact portion. The apparatus further includes an anti-separation unit for preventing the seizure in the upward direction, wherein the contact portion and the connection portion of the anti-separation unit are rounded.

According to an embodiment of the present invention, the height of the outer circumferential surface of the contact portion is equal to the thickness of the substrate.

According to an embodiment of the invention, the thickness of the substrate is 0.8mm, the radius of curvature of the round is 0.1mm to 0.3mm.

According to an embodiment of the present invention, the chucking pin further includes a body extending downward from the bottom of the contact portion, the connection portion of the contact portion and the body is rounded.

According to an embodiment of the present invention, the support member further includes a driving unit for linear reciprocating movement between the chucking position for chucking the substrate and the unchucking position waiting before being moved to the chucking position.

The substrate processing apparatus according to the present invention for solving the above problems is a housing that provides a space for performing a substrate processing process therein, a spin having a support surface opposed to one surface of the substrate to support the substrate inside the housing during the process A head, an injection member for injecting a processing liquid into a substrate placed on the spin head during the process, and a plurality of chucking pins disposed along an edge of the support surface of the spin head to chuck a part of the edge of the substrate during the process. The chucking pin is formed to extend upwardly from a contact portion having an outer circumferential surface in contact with a side surface of the substrate during the process and an upper end of the contact portion to prevent the substrate contacting the outer circumferential surface of the contact portion from being separated upward from the contact portion during the process. It further comprises a departure prevention portion, the connection portion of the contact portion and the departure prevention portion It is de.

According to an embodiment of the present invention, the height of the outer circumferential surface of the contact portion is equal to the thickness of the substrate.

According to an embodiment of the invention, the thickness of the substrate is 0.8mm, the radius of curvature of the round is 0.1mm to 0.3mm.

According to an embodiment of the present invention, the chucking pin further includes a body extending downward from the bottom of the contact portion, the connection portion of the contact portion and the body is rounded.

According to an embodiment of the present invention, the support member further includes a driving unit for linear reciprocating movement between the chucking position for chucking the substrate and the unchucking position waiting before being moved to the chucking position.

The present invention improves the substrate processing process efficiency by preventing the substrate from being separated from the support member during the process.

The present invention improves the substrate processing process efficiency by preventing the processing liquid from remaining in the chucking pins for fixing the substrate.

The present invention prevents the phenomenon that the edge of the substrate is damaged during the process by the chucking pin for fixing the substrate.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments presented herein are provided so that the disclosure will be thorough and complete, and will fully convey the spirit of the invention to those skilled in the art. Parts denoted by the same reference numerals throughout the specification represent the same components.

In addition, in the present embodiment, the apparatus for cleaning the semiconductor substrate by a single sheet was described as an example, but the present invention can be applied to any apparatus for processing the substrate.

(Example)

1 is a view showing a substrate processing apparatus according to the present invention, Figure 2 is a perspective view of the support member shown in FIG. 3 is a view showing the chucking pin shown in FIG.

Referring to FIG. 1, an apparatus for treating substrate 100 according to the present invention may include a housing 110, a support member 120, and a driving member 130. , And an injection member 140.

The housing 110 provides a space for processing a semiconductor substrate (hereinafter, referred to as a wafer) W therein. The process is a cleaning process for removing foreign matter remaining on the surface of the wafer (W). The housing 110 has a cylindrical shape with an open top. The open upper portion of the housing 110 serves as a passage for the wafer W to enter and exit the space during the process. The drainage line 112 for draining the treatment liquid used in the process is connected to the housing 110.

The support member 120 supports the wafer W in the inner space of the housing 110 during the process. As the support member 120, a spin chuck is used. The support member 120 includes a spin head 122 and a rotating shaft 124. Spin head 122 has a generally plate shape. The spin head 122 is installed to be rotatable inside the housing 110. The upper surface of the spin head 122 is used as a support surface on which the wafer W is placed during the process. The axis of rotation 124 is provided for rotation of the spin head 122. The upper end of the rotating shaft 124 is coupled to the lower center of the spin head 122, the lower end is coupled to the drive member 130. The chucking pins 200 are installed on the spin head 122. Detailed description of the chucking pin 200 will be described later.

The drive member 130 drives the support member 120. The driving member 130 rotates the rotation shaft 124 of the support member 120 during the process to rotate the wafer W placed on the spin head 122 at a predetermined rotation speed. In addition, the driving member 130 rotates the rotation shaft 124 to adjust the height of the spin head 122.

The injection member 140 injects the processing fluid to the wafer (W) during the process. The injection member 140 includes a nozzle 142 and a transfer arm 144. The nozzle 142 sprays the processing fluid onto the surface of the wafer W placed on the spin head 122 during the process. The processing fluid includes a cleaning liquid for removing foreign matter remaining on the surface of the wafer W, a rinse liquid for removing the cleaning liquid remaining on the surface of the wafer W, and a drying gas for drying the surface of the wafer W. In order to spray the treatment fluids, the nozzle 140 may include a cleaning nozzle for spraying a cleaning liquid, a rinse nozzle for spraying a rinse liquid, and a drying nozzle for using a dry gas. Here, various kinds of chemicals are used as the cleaning liquid, ultrapure water (DIW) is used as the rinse liquid, and isopropyl alcohol gas (IPA gas) is used as the drying gas.

The transfer arm 144 adjusts the position of the nozzle 142 during the process. For example, before the cleaning of the wafer W is performed, the transfer arm 144 moves the nozzle 142 waiting outside the housing 110 to be positioned at a position for spraying the processing fluid. In addition, the transfer arm 144 rotates and swings the nozzle 142 when the nozzle 142 injects the processing fluid during the process so that the nozzle 142 evenly distributes the processing fluid over the entire processing surface of the wafer W. FIG. It can be sprayed.

Subsequently, the chucking pin 200 according to the present invention will be described in detail.

2 and 3, the chucking pin 200 according to the present invention fixes the wafer W on the spin head 122 during the process. The chucking pins 200 are installed along the upper edge of the spin head 122. At least three chucking pins 200 are disposed at an equal angle with respect to the center of the upper surface of the spin head 122. Each chucking pin 200 includes a first body portion 210, a second body portion 220, a contact portion 230, and a departure prevention portion 240.

The first body portion 210 is installed above the spin head 122. The first body portion 210 is installed to be perpendicular to the upper surface of the spin head 122. The first body portion 210 has a generally long pin shape. The lower end of the first body portion 210 is driven by a drive unit (not shown) installed inside the spin head 122. For example, the first body portion 210 is moved between the chucking position (L1 in FIG. 5B) and the unchucking position (L2 in FIG. 5A). The chucking position L1 is a position for the chucking pin 210 to chuck the wafer W, and the unchucking position L2 is a position for the chucking pin 210 to wait before moving to the chucking position L1. . The first body portion 210 linearly reciprocates between the chucking position L1 and the unchucking position L2 by a drive unit installed inside the spin head 122.

The second body portion 220 is a portion extending upward from the top of the first body portion 210. At this time, the second body portion 220 is extended to gradually reduce the cross-sectional area toward the top. The second body portion 220 generally has a circular truncated cone shape that is thinned upward.

The contact portion 230 is a portion extending upward from the top of the second body portion 220. The contact portion 230 has a cylindrical shape. The contact portion 230 has an outer circumferential surface 232 in contact with the side surface W1 of the wafer W during the process. At this time, the height h1 of the outer circumferential surface 232 is provided in the same manner as the thickness T of the wafer W (the height of the side surface W1 of the wafer W). For example, since the thickness T of the general wafer W is provided at approximately 0.8 mm, the height h1 of the outer circumferential surface of the contact portion 230 is provided at a corresponding 0.8 mm.

Here, the portion (hereinafter referred to as the first connection portion) (a) to which the second body portion 220 and the contact portion 230 are connected is contacted with the contact portion 230 during the process and the supported wafer W is separated downward. Prevent it. The first connecting portion a is rounded. At this time, the size of the radius of curvature R1 of the first connection portion (a) round is set to prevent the downward departure of the wafer (W). That is, when the size of the radius of curvature R1 of the first connection portion (a) round is larger than an appropriate value, it is difficult to prevent the wafer W from falling down. In one embodiment, the radius of curvature R1 of the first connection portion a is provided at 1 mm. That is, when the radius of curvature R1 of the first connection portion a exceeds 1 mm based on the wafer W having a thickness of 0.8 mm, the effect of preventing the wafer W from leaving the first connection portion a is less. In the process, the edge side of the wafer W is moved downward along the rounded surface of the first connection portion a.

The departure prevention part 240 prevents the wafer W supported by the contact part 230 from being moved upward from the contact part 230 during the process. The separation prevention part 240 extends upward from the top of the contact part 230. At this time, the departure prevention part 240 is extended so that the cross-sectional area is gradually increased toward the upper portion of the contact portion 230. Therefore, the departure prevention part 240 has a truncated conical shape that generally increases in cross-sectional area toward the upper direction.

Here, a portion (hereinafter referred to as a second connection portion) b to which the contact portion 230 and the separation preventing portion 240 are connected may be in contact with the contact portion 230 during the process so that the supported wafer W is separated upward. To prevent them. That is, the second connection portion b is a seam portion between the contact surface 232 of the contact portion 230 and the outer circumferential surface of the separation prevention portion 240, and the wafer W is contacted due to the rotation of the wafer W during the process. 230 to block upward movement. In addition, the second connection portion (b) prevents an angle from being formed at the seam portion between the contact portion 230 and the separation preventing portion 240. If an angled corner is formed in the second connection portion b, the processing liquid used in the process remains in the second connection portion b, and acts as a contamination source at the edge of the wafer W. In addition, when the angled corner is formed in the second connection portion (b), when the wafer W is separated upward from the contact portion 230 due to the rotation of the wafer W during the process, the contact portion 230 and the separation prevention The edges of the wafer W may be damaged by the angled edges between the portions 240.

In addition, the size of the radius of curvature R2 of the second connection portion (b) round is provided in a size for preventing the separation of the wafer (W) and damage of the wafer (W). That is, when the radius of curvature R2 of the round of the second connection part b is larger than an appropriate value, it is difficult to prevent the wafer W from escaping upward, and the radius of curvature R2 of the round of the second connection part b is difficult to prevent. ) Is less than the proper value, it is difficult to prevent damage to the wafer (W) edge. Therefore, the size of the radius of curvature R2 of the round of the second connection portion b is set to prevent the separation of the wafer W upward and the damage of the wafer W edge. In one embodiment, the radius of curvature R2 of the round of the second connection part b is provided at 0.2 mm. That is, when the radius of curvature R2 of the wafer W of the connecting portion a exceeds 0.2 mm based on the wafer W having a thickness of 0.8 mm, the effect of preventing the separation of the second connecting portion b is less. In the process, the edge side of the wafer W is moved upward along the round surface of the second connection portion b. In addition, when the radius of curvature of the wafer W of the second connecting portion b is less than 0.2 mm, the processing liquid is formed in the gap between the second connecting portion b of the chucking pin 200 and the wafer W during the process. It remains, causing problems such as contamination of the wafer W.

Hereinafter, the process of the substrate processing apparatus 1 according to the present invention will be described in detail. 4 is a view showing a state of cleaning the substrate of the substrate processing apparatus according to the present invention, Figures 5a and 5b is a view for explaining the process of the chucking pins of the support member chucking the substrate according to the present invention.

When the process is started, the wafer W is loaded on the support member 120, and a processing fluid is sprayed on the wafer W to clean the wafer W. That is, referring to FIG. 4, the robot arm (not shown) loads the wafer W on the spin head 122 of the support member 120. When the wafer W is placed on the spin head 122, each of the chucking pins 200 chucks the wafer W.

The chucking pins 200 chuck the wafer W as follows. 5A and 5B, when the robot arm rests the wafer W on the spin head 122, the chucking pins 220 are mounted on a driving unit (not shown) installed inside the spin head 122. Is driven to move from the unchucking position L2 to the chucking position L1. When the chucking pin 220 is moved to the chucking position L1, the outer peripheral surface 232 of the contact portion 230 of each chucking pin 200 contacts the side surface of the wafer W to fix the wafer W. At this time, the wafer W is prevented from moving downward by the second connection part b provided on the chucking pin 200.

When the wafer W is fixed on the spin head 122, the driving member 130 rotates the rotating shaft 124 to rotate the wafer W placed on the spin head 122 at a predetermined rotation speed. At this time, the wafer W is prevented from being separated from the chucking pin 220 by the second connection part b provided to each chucking pin 200. That is, when the wafer W is rotated at a high speed, the phenomenon that the wafer W is to be moved upward in the upward direction due to the centrifugal force applied to the wafer W occurs. At this time, the second connection portion (b) of the separation prevention unit 210 blocks the movement of the wafer (W) to be separated in the upward direction. In addition, since the second connecting portion b is rounded, the processing liquid does not remain in the gap between the second connecting portion b and the edge of the wafer W. FIG.

When the wafer W is rotated, the injection member 140 injects a processing fluid to the surface of the wafer W to be rotated. That is, the transfer member 144 of the injection member 140 moves the nozzle 142 to a position for spraying the treatment liquid. The nozzle 142 sprays the processing liquid onto the surface of the wafer W to be rotated. The injected treatment liquid removes foreign substances on the surface of the wafer (W). The used treatment liquid is drained through the drain line 112.

When the cleaning process of the wafer W is completed, the driving member 130 stops the rotation of the support member 120, and the chucking pins 200 move from the chucking position L1 to the unchucking position L2, The wafer W is unchucked. The robot arm unloads the wafer W from the support member 120 and then transfers the robot arm to a facility where a subsequent process is performed.

As described above, the present invention effectively fixes the wafer W on the support member 120 during the process, thereby preventing the phenomenon that the wafer W is separated from the support member 120 during the process, thereby improving process efficiency. Improve. In particular, the chucking pin 200 according to the present invention sets the height H1 of the outer peripheral surface 232 of the contact portion 230 which is in contact with the wafer W to be the same as the thickness of the wafer W, and by centrifugal force during the process. Since the wafer W is provided with first and second connection portions a and b that are rounded to have a predetermined radius of curvature so that the wafer W does not deviate downwardly or upwardly from the contact portion 230, the wafer W is processed during the process. ) Can be effectively fixed.

In addition, the present invention by rounding the first and second connecting portions (a, b) to prevent the separation of the wafer (W), the chucking pin 200 is brought into contact with the wafer (W) the processing liquid used in the process At the same time, the edge portion of the wafer W in contact with the chucking pin 200 is prevented from being damaged by the chucking pin 200.

The foregoing detailed description illustrates the present invention. In addition, the foregoing description merely shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the disclosed contents, and / or the skill or knowledge in the art. The above-described embodiments are for explaining the best state in carrying out the present invention, the use of other inventions such as the present invention in other state known in the art, and the specific fields of application and uses of the present invention. Various changes are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

1 is a view showing a substrate processing apparatus according to the present invention.

FIG. 2 is a perspective view of the supporting member shown in FIG. 1. FIG.

3 is a view showing the chucking pin shown in FIG.

4 is a view showing a state of cleaning the substrate of the substrate processing apparatus according to the present invention.

5A and 5B are views for explaining a process of chucking a substrate by the chucking pins of the support member according to the present invention.

* Description of symbols on the main parts of the drawings *

100: substrate processing apparatus

110: housing

120: support member

130: drive member

140: injection member

200: chucking pin

210: first body part

220: second body portion

230: contact portion

240: departure prevention part

Claims (10)

In a member for supporting a substrate, A spin head having a support surface opposite to the processing surface of the substrate, A plurality of chucking pins disposed along the edge of the support surface of the spin head, chucking a portion of the edge of the substrate during the process, The chucking pin, A contact portion having an outer circumferential surface in contact with the side surface of the substrate during the process; and It is formed so as to extend in an upward direction from the upper end of the contact portion further comprises a departure preventing portion for preventing the substrate in contact with the outer circumferential surface of the contact portion in the upward direction from the contact portion, The connection portion of the contact portion and the separation prevention portion, A support member, characterized in that the round. The method of claim 1, The height of the outer peripheral surface of the contact portion, The support member, characterized in that the same as the thickness of the substrate. The method of claim 2, The thickness of the substrate, 0.8mm, The radius of curvature of the round is Support member, characterized in that 0.1mm to 0.3mm. The method according to claim 1 or 2, The chucking pin, Further comprising a body extending downward from the bottom of the contact portion, The connecting portion of the contact portion and the body, A support member, characterized in that the round. The method according to claim 1 or 2, The support member, And a driving unit for linearly reciprocating the chucking pins between the chucking positions for chucking the substrate and the unchucking positions waiting before being moved to the chucking positions. In the apparatus for processing a substrate, A housing providing a space therein for performing a substrate processing process; A spin head supporting the substrate within the housing during the process and having a support surface opposite to one surface of the substrate, An injection member for injecting a treatment liquid to the substrate placed on the spin head during the process, and A plurality of chucking pins disposed along the edge of the support surface of the spin head, chucking a portion of the edge of the substrate during the process, The chucking pin, A contact portion having an outer circumferential surface in contact with the side surface of the substrate during the process; and It is formed so as to extend in an upward direction from the upper end of the contact portion further comprises a departure preventing portion for preventing the substrate in contact with the outer circumferential surface of the contact portion in the upward direction from the contact portion, The connection portion of the contact portion and the separation prevention portion, The substrate processing apparatus characterized by being round. The method of claim 6, The height of the outer peripheral surface of the contact portion, The substrate processing apparatus characterized by the same as the thickness of the said board | substrate. The method of claim 7, wherein The thickness of the substrate, 0.8mm, The radius of curvature of the round is Substrate processing apparatus, characterized in that 0.1mm to 0.3mm. The method according to claim 6 or 7, The chucking pin, Further comprising a body extending downward from the bottom of the contact portion, The connecting portion of the contact portion and the body, The substrate processing apparatus characterized by being round. The method according to claim 6 or 7, The support member, And a driving unit for linearly reciprocating the chucking pins between the chucking positions for chucking the substrate and the unchucking positions waiting before being moved to the chucking positions.
KR1020070094608A 2007-09-18 2007-09-18 Support member and apparatus for treating substrate with the same KR20090029407A (en)

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WO2018209160A1 (en) * 2017-05-12 2018-11-15 Kla-Tencor Corporation Floating wafer chuck
CN109244032A (en) * 2018-10-12 2019-01-18 苏州晋宇达实业股份有限公司 A kind of silicon wafer rotary table of ion implantation apparatus
CN112185885A (en) * 2020-12-01 2021-01-05 西安奕斯伟硅片技术有限公司 Chuck pin for clamping silicon wafer and device for holding silicon wafer
CN112802782A (en) * 2021-03-29 2021-05-14 西安奕斯伟硅片技术有限公司 Pretreatment system and method for testing minority carrier lifetime of monocrystalline silicon wafer by charge passivation
US20220136099A1 (en) * 2020-11-02 2022-05-05 Changxin Memory Technologies, Inc. Carrier component and coating developer device

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US20220136099A1 (en) * 2020-11-02 2022-05-05 Changxin Memory Technologies, Inc. Carrier component and coating developer device
CN112185885A (en) * 2020-12-01 2021-01-05 西安奕斯伟硅片技术有限公司 Chuck pin for clamping silicon wafer and device for holding silicon wafer
CN112802782A (en) * 2021-03-29 2021-05-14 西安奕斯伟硅片技术有限公司 Pretreatment system and method for testing minority carrier lifetime of monocrystalline silicon wafer by charge passivation

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