KR20090025805A - Apparatus for fabricating semiconductor and method for forming semiconductor device using the same - Google Patents

Apparatus for fabricating semiconductor and method for forming semiconductor device using the same Download PDF

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Publication number
KR20090025805A
KR20090025805A KR1020070090927A KR20070090927A KR20090025805A KR 20090025805 A KR20090025805 A KR 20090025805A KR 1020070090927 A KR1020070090927 A KR 1020070090927A KR 20070090927 A KR20070090927 A KR 20070090927A KR 20090025805 A KR20090025805 A KR 20090025805A
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KR
South Korea
Prior art keywords
wafer
semiconductor device
guide
forming
trench
Prior art date
Application number
KR1020070090927A
Other languages
Korean (ko)
Inventor
이미옥
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020070090927A priority Critical patent/KR20090025805A/en
Publication of KR20090025805A publication Critical patent/KR20090025805A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

The present invention relates to a semiconductor device manufacturing apparatus and a method of forming a semiconductor device using the same, in order to solve the problem that a contaminant is generated on the back surface of the wafer during the semiconductor manufacturing process affecting subsequent processes, the wafer stage After using a circular trench in which the wafer can be placed in the mirror block without using a wafer, a wafer guide for fixing and supporting the edge portion of the wafer on the sidewall of the trench is provided, and the process of forming a semiconductor device is performed. Thus, the present invention relates to a method for stably performing a semiconductor element formation process without being affected by impurities generated on the back surface of the wafer.

Description

A manufacturing apparatus of a semiconductor device and a method of forming a semiconductor device using the same {APPARATUS FOR FABRICATING SEMICONDUCTOR AND METHOD FOR FORMING SEMICONDUCTOR DEVICE USING THE SAME}

1 is a schematic diagram illustrating a mirror block according to the prior art;

2 is a plan view of a wafer stage according to the prior art;

3 and 4 are cross-sectional views illustrating problems of the wafer stage according to the prior art.

5 and 6 are cross-sectional views showing a semiconductor device manufacturing apparatus and a method of forming a semiconductor device using the same according to the present invention.

<Explanation of symbols for the main parts of the drawings>

10 wafer stage 15 lift pin

20: suction port 30: support pin

40: guard ring 150, 50: wafer

60: pollutant 90, 100: mirror block

120: round trench 130: guide

140: gas injection nozzle 160: control device

The present invention relates to a semiconductor device manufacturing apparatus and a method of forming a semiconductor device using the same, in order to solve the problem that a contaminant is generated on the back surface of the wafer during the semiconductor manufacturing process affecting subsequent processes, the wafer stage After using a circular trench in which the wafer can be placed in the mirror block without using a wafer, a wafer guide for fixing and supporting the edge portion of the wafer on the sidewall of the trench is provided, and the process of forming a semiconductor device is performed. Thus, the present invention relates to a method for stably performing a semiconductor element formation process without being affected by impurities generated on the back surface of the wafer.

The exposure process is a technique for implementing a layout pattern drawn on a mask on a wafer. To this end, a wafer coated with a photosensitive film is used. The photosensitive film is formed by using a spin coating process.

In addition, when a thin film is formed on the wafer, processes such as physical vapor deposition (PVD) and chemical vapor deposition (CVD) are performed. Next, a process of forming a desired pattern using an etching process and a chemical mechanical polishing (CMP) process on the thin film is performed by a method such as physical vapor deposition and chemical vapor deposition.

Contaminants may be generated on the back surface of the wafer during the above processes, which may be placed on the support pins of the wafer stage, causing the wafer to be distorted, and degrading adsorption characteristics, thereby making the process of forming a semiconductor device stable. Cause problems that cannot proceed.

1 is a schematic diagram illustrating a mirror block according to the prior art.

1 is a mirror block 90 serving as a shelf for performing work on a wafer in order to proceed with a process of forming a semiconductor device. The wafer stage 10 is provided at the center of the mirror block 90, and the wafer stage 10 includes a lift pin 15, a vacuum suction port 20, and a guard ring 40.

2 is a plan view illustrating a wafer stage according to the prior art.

Referring to FIG. 2, the support pins 30 provided on the surface of the wafer stage 10 can be seen. First, the alignment process is performed with the lift pins 15, and then the wafer is fixed by using the vacuum suction port 20. At this time, the support pins 30 are in direct contact with the back surface of the wafer.

Therefore, when contaminants are generated on the back surface of the wafer, the equilibrium of the wafer may not be maintained or the vacuum adsorption characteristics may be degraded.

3 and 4 are cross-sectional views illustrating problems of the wafer stage according to the prior art.

Referring to FIG. 3, the wafer stage 10 includes an adsorption port 20 capable of adsorbing the wafer 50.

A support pin 30 is provided on the wafer stage 10 to support the wafer 50 while maintaining a predetermined interval over a large area.

The guard ring 40 is provided on the outside of the support pin 30 to help the wafer 50 to be stably supported.

Here, when the contaminant 60 is generated on the back surface of the wafer 50, the contaminant 60 may penetrate into the region between the support pins 30 to contaminate the semiconductor device manufacturing apparatus. Transfer to a wafer chuck for subsequent processing may cause contamination of another wafer. Area IA indicates that the contaminant 60 has entered between the wafer 50 and the support pin 30.

Figure 4 is an enlarged schematic view showing the problem according to the prior art area 'ⓐ' of FIG.

Referring to FIG. 4, it can be seen that the wafer 50 is placed on the support pin 30. At this time, the contaminant 60 generated in the previous process is located between the wafer 50 and the support pin 30 to deform the shape of the wafer 50 or lift the wafer 50 to balance the wafer 50. Interfering problems appear.

If such a problem occurs, the semiconductor device formation process may not be normally performed. In particular, in a process sensitive to the state change of the wafer, such as an exposure process, it can be a fatal problem. Since the exposure process is a process of forming an image on the wafer using a lens, it is important to keep the distance between the exposure lens and the wafer constant. When the shape of the wafer is deformed or the phase is changed by contaminants as described in FIG. Problems occur such as defocus, in which the size of the image formed on the wafer becomes larger or smaller than the original image.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems in the prior art. Instead of using a wafer stage, the present invention provides a circular trench in which a wafer is to be placed in a mirror block, and then fixes an edge portion of the wafer on the sidewall of the trench. It is an object of the present invention to provide a device for manufacturing a semiconductor device and a method for forming a semiconductor device using the same, comprising a wafer guide that can be supported and performing a semiconductor device forming step so as not to be affected by impurities generated on the back surface of the wafer. do.

The semiconductor device manufacturing apparatus according to the present invention for achieving the above object is

A mirror block having a wafer stage portion in the form of a circular trench,

A wafer guide provided on an upper sidewall of the circular trench to fix the wafer;

It characterized in that it comprises a gas injection nozzle provided in the bottom of the circular trench.

Here, the diameter of the circular trench is 150 ~ 350mm, characterized in that the height is 0.01 ~ 1mm, the wafer guide is characterized in that provided in the form of tongs to partially fix the wafer edge portion, the tongs type wafer guide Is characterized in that it is provided with 3 to 8, the wafer guide is characterized in that it is provided with a ring-shaped tongs to secure the entire wafer edge portion, the size of the wafer guide is characterized in that 0.5 ~ 1.0mm, The wafer guide may include a rotation function, and the gas injection nozzle may further include a control device capable of uniformly controlling the pressure and temperature of the gas to be injected.

In addition, the method of forming a semiconductor device according to the present invention comprises the steps of forming a photosensitive film on the wafer;

The wafer includes a mirror block having a wafer stage portion in the form of a circular trench, a wafer guide provided on an upper sidewall of the circular trench to fix the wafer, and a gas injection nozzle provided at the bottom of the trench. Loading into the semiconductor device manufacturing apparatus,

Placing the wafer on the wafer guide;

Aligning the wafer;

Fixing the wafer by fixing the wafer guide;

Leveling the wafer using the gas jet nozzle; and

And performing an exposure process on the wafer.

Hereinafter, an apparatus for manufacturing a semiconductor device and a method for forming a semiconductor device using the same according to the present invention will be described in detail with reference to the accompanying drawings.

The semiconductor manufacturing process can be broadly classified into a thin film process for forming a thin film on a wafer, an exposure and development process for forming a photoresist pattern for forming a pattern on the surface of the thin film, and an etching process for forming the shape of the photoresist pattern. .

Here, the wafer, which is a semiconductor substrate, is moved into a chamber suitable for each process and is performed. At this time, a wafer chuck for fixing a wafer in each chamber is provided.

5 and 6 are cross-sectional views illustrating an apparatus for manufacturing a semiconductor device and a method of forming a semiconductor device using the same according to the present invention.

Referring to FIG. 5, the wafer stage portion of the mirror block 100 is provided in the form of a circular trench 120.

The wafer guide 130 fixing the wafer is provided on the upper sidewall of the circular trench 120, and the gas injection nozzle 140 is provided at the bottom of the circular trench 120.

Here, the diameter of the circular trench 120 is preferably formed in the range of 150 to 350 mm, which is the size of the wafer, and the height of the circular trench 120 is preferably formed to be 0.01 to 1 mm.

In addition, the wafer guide 130 may be provided in the form of tongs to partially fix the wafer edge portion, in this case it is preferably provided with three to eight, it may be a ring-type tongs for fixing the entire wafer edge portion.

After the wafer guide 130 is placed on the lower support of the forceps and performs a fine alignment process, the wafer guide 130 operates in a textile manner in which the upper part of the forceps can be compressed and fixed to the wafer. At this time, the size of the lower base of the forceps is preferably 0.5 ~ 1.0mm.

Referring to FIG. 6, an exposure process is performed after the wafer 150 is aligned and fixed to the wafer guide 130 as a method for forming a semiconductor device by using the apparatus for manufacturing a semiconductor device according to the present invention. In this case, the wafer 150 may be balanced by the gas rising from the lower portion of the wafer 150. To this end, the gas injection nozzle 140 further includes a controller 160 capable of uniformly controlling the pressure and temperature of the gas.

As described above, the present invention does not use a wafer stage, but has a circular trench in which a wafer is to be placed in a mirror block, and then forms a semiconductor device using a wafer guide which can fix and support an edge portion of the wafer. By advancing, it can be prevented from being influenced by the impurities which generate | occur | produce on the back surface of a wafer. In addition, it is possible to stably maintain the equilibrium of the wafer by supporting the entire wafer at a uniform pressure through the gas jet nozzle at the bottom of the wafer.

As described above, the semiconductor device manufacturing apparatus and the method of forming the semiconductor device using the same according to the present invention do not use the wafer stage, and after the circular trench in which the wafer is placed in the mirror block, the edge portion of the wafer is removed. By using a wafer guide that can be fixed and supported, it is possible to avoid the influence of impurities generated on the back surface of the wafer in the process of forming the semiconductor element. Therefore, the present invention can stably proceed the process of forming a semiconductor device, and provides an effect of increasing the yield and reliability of the semiconductor manufacturing process. In addition, since the vacuum adsorption method is not used, the vacuum adsorption equipment can be eliminated, and the apparatus for manufacturing a semiconductor element can be simplified.

In addition, a preferred embodiment of the present invention is for the purpose of illustration, those skilled in the art will be able to various modifications, changes, substitutions and additions through the spirit and scope of the appended claims, such modifications and changes are the following claims It should be seen as being in scope.

Claims (9)

A mirror block having a wafer stage portion formed in a circular trench shape; A wafer guide provided on an upper sidewall of the circular trench to fix the wafer; And And a gas injection nozzle provided at the bottom of the circular trench. The method of claim 1, The circular trench has a diameter of 150 to 350 mm and a height of 0.01 to 1 mm, characterized in that the semiconductor device manufacturing apparatus. The method of claim 1, The wafer guide is a device for manufacturing a semiconductor device, characterized in that provided in the form of tongs for partially fixing the wafer edge portion. The method of claim 3, wherein The tongs type wafer guide is provided with three to eight semiconductor device manufacturing apparatus, characterized in that provided. The method of claim 1, The wafer guide is a device for manufacturing a semiconductor device, characterized in that provided with a ring-shaped tongs for fixing the entire wafer edge portion. The method of claim 1, Size of the wafer guide is a device for manufacturing a semiconductor device, characterized in that 0.5 ~ 1.0mm. The method of claim 1, The wafer guide is an apparatus for manufacturing a semiconductor device, characterized in that it comprises a rotation function. The method of claim 1, The gas injection nozzle further comprises a control device for uniformly controlling the pressure and temperature of the gas to be injected. Forming a photoresist film on the wafer; The wafer includes a mirror block having a wafer stage portion in the form of a circular trench, a wafer guide provided on the sidewall of the circular trench to fix the wafer, and a gas injection nozzle provided at the bottom of the trench. Loading into the manufacturing apparatus of a semiconductor device, Placing the wafer on the wafer guide; Aligning the wafer; Fixing the wafer by fixing the wafer guide; Leveling the wafer using the gas jet nozzle; And And performing an exposure process on the wafer.
KR1020070090927A 2007-09-07 2007-09-07 Apparatus for fabricating semiconductor and method for forming semiconductor device using the same KR20090025805A (en)

Priority Applications (1)

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KR1020070090927A KR20090025805A (en) 2007-09-07 2007-09-07 Apparatus for fabricating semiconductor and method for forming semiconductor device using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070090927A KR20090025805A (en) 2007-09-07 2007-09-07 Apparatus for fabricating semiconductor and method for forming semiconductor device using the same

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KR20090025805A true KR20090025805A (en) 2009-03-11

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