KR20090003251A - 솔더러블 루프 접촉부를 가진 반도체 소자 - Google Patents
솔더러블 루프 접촉부를 가진 반도체 소자 Download PDFInfo
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- KR20090003251A KR20090003251A KR1020087023034A KR20087023034A KR20090003251A KR 20090003251 A KR20090003251 A KR 20090003251A KR 1020087023034 A KR1020087023034 A KR 1020087023034A KR 20087023034 A KR20087023034 A KR 20087023034A KR 20090003251 A KR20090003251 A KR 20090003251A
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Abstract
반도체 다이의 안정한 솔더 접촉부를 쉽게 제조하는 방법은 다른 솔더러블 금속으로 덮여질 수 있는 금속 전선이나 리본으로 형성되는 루프 모양으로 만들어진다. 루프는 반도체 다이에 다수의 루프 형식이나, 단일의 루프 형식 또는 양자가 될 수 있다. 루프 접촉부는 서머소닉이나 울트라소닉 본딩을 사용하여 다이에 형성될 수 있다. 다이는 소자용 솔더 대기 접촉부로서 캡슐화 물질을 통해 드러난 다이를 남겨두고 캡슐화 물질로 또한 패키징될 수도 있다.
솔더러블 루프 접촉부, 서머소닉, 울트라소닉, 반도체 소자, 캡슐화 물질
Description
이 출원은 2006년 3월 27일에 출원된 미국 특허출원 제 60/786,139호의 우선권 이익을 청구하고, 이는 여기서 참조를 위해 병합된다.
본 발명은 반도체 소자에 관한 것으로서, 더욱 상세하게는, 솔더러블(Solerable) 표면으로 루프(Loop) 접촉부(Contacts)를 가지는 반도체 소자에 대한 것이며, 반도체 다이(Die)에 솔더러블 접촉부를 보다 경제적이고 효율적으로 제조하는 방법에 관한 것이다.
본 발명의 소자는 더욱 효율적이고 경제적인 솔더러블 접촉부 제조방법을 가지는 반도체 소자이다. 이 소자는 그 간단한 디자인으로 인해 제조하는데 보다 적은 시간을 필요로 한다.
범프(bumps), 솔더 범프(solder bumps), 또는 스터드 범프(stud bumps)와 같은 반도체 다이에 형성된 솔더러블 접촉부를 가진 반도체 소자는 당해 기술분야에서 잘 알려져 있다. 소자에 형성된 범프를 가진 소자는 본 발명의 소자 제조방법과 비교하여 별도의 절차를 필요로 한다. 다이 위에 범프를 가진 소자는 다이 위에 범프를 형성하고, 플럭스(Flux)를 캡슐화하며, 마지막으로 리플로우(Reflow) 공정을 위해 구리선을 필요로 한다.
이전의 소자와 관련된 문제점은 제조 공정이 정밀(detailed)하다는 것이다. 또한, 솔더 접촉부는 보드 마운팅(Board mounting) 후에 깨지기가 쉬워서 신뢰성이 부족하였다는 점이다.
더욱 효율적이고 덜 복잡한 반도체 소자 제조방법이 필요하였다.
보드 마운팅을 위해 반도체 소자를 솔더링(soldering)하거나 접착하기 위한 안정한 접촉부가 필요하였다.
본 발명의 일 실시예에 따르면, 반도체 소자는 다이의 드레인(Drain) 영역에 접착되는 패드를 접착하는 반도체 다이와, 소스(Source)에 결속된 솔더러블 루프 접촉부와 다이의 게이트(Gate) 영역을 포함한다. 루프 접촉부는 솔더러블 금속 선이나 리본(ribbon)으로 만들어지고, 선택적으로 다른 솔더러블 금속으로 덮여 있을 수 있다. 루프 접촉부를 다이에 본딩(Bonding)하는 방법은 서머소닉(Thermosonic) 본딩이나 울트라소닉(Ultrasonic) 본딩 중 하나이다.
보다 상세하게는, 본 발명은 첫 번째 실시예의 단일(single) 접촉부나 다수의(multi) 접촉부 또는 양자에 서머소닉 방식으로 접착된 루프 접촉부를 가진 반도체 소자를 포함한다. 루프 접촉부는 금이나 구리와 같은 솔더러블 금속 선으로 만들어지고, 전선은 구리, 니켈, 팔라듐(Palladium)이나 백금으로 더 덮여질 수도 있다. 소자는 캡슐화된 물질로 포장될 수 있고 솔더를 사용하는 어플리케이션 보드(Application Board)에 붙여질 수 있다.
두 번째 실시예로서, 본딩하는 면은 다이에 형성된 스터드 범프이다. 루프 접촉부를 스터드 범프에 본딩하는 것은, 다이에 대한, 직접적으로, 서머소닉 본딩 공정에서 필요한 열 때문에 생기는 반도체 다이의 피해를 예방한다. 일단 루프 접촉부가 형성되면, 소자는 캡슐화 물질을 통해 드러난 루프 접촉부를 남겨두고 캡슐화 물질로 인해 캡슐화될 수 있다. 금속 선은 구리나 금이고 구리, 니켈, 팔라듐, 백금으로 더 덮여질 수 있다.
세 번째 실시예에 따르면, 소자는 금속 선이나 리본으로 만들어진 루프 접촉 부를 가진다. 선이나 리본은 구리, 알루미늄, 또는 금과 같은 솔더러블 금속으로 만들어지고, 선택적으로 구리, 니켈, 팔라듐과 백금으로 덮여질 수도 있다. 선이나 리본은 울트라소닉 본딩 기술에 의해서 직접적으로 다이에 부착된다. 다시 말하면, 다이는 선택적으로 캡슐화 물질을 사용하여 패키징될 수 있다.
본 발명의 이점은 소자가 효율적인 제조 공정을 고려한다는 것이다. 그것은 포토레지스트(Photoresist) 분배, 발달, 금속 도금, 범프 형성과 리플로우에 대한 요구를 제거한다. 다이가 다이 접착 패드에 결합 된 후에, 전선이나 리본은 중간단계 필요없이 다이에 직접 결합 된다. 아래에 상세히 언급된 것으로, 서머소닉 본딩 공정은 본딩 툴(Tool)에 전선의 삽입을 필요로 하고, 그것은 가열된 후 다이에 접착된다. 그 후에, 다른 결합은 본딩 툴의 전선을 다이에 접착함으로써 만들어질 수 있고, 웨지(wedge) 결합을 다이 또는 본딩 표면에 생성할 수 있다. 이를 테면 스터드나 솔더 범프 형성의 제조 공정에서의 리플로우 공정처럼, 적어도 루프 접촉부 제조 공정에 대해서는 더 이상의 단계가 필요하지 않다.
본 발명의 다른 이점은 루프 접촉부가 튼튼하고 안정적인 솔더 접촉부라는 것이다. 이전의 소자, 이를테면 스터드 볼(Ball)이나 범프를 가진 소자들은 깨질 여지가 있었다. 본 발명의 루프 접촉부는 고체 금속 선이나 리본으로 이루어져 있다. 이런 고체 금속 전선이나 리본들은 솔더나 스터드 범프보다 견고하고, 때문에 루프 접촉부는 스터드 범프를 가지는 소자처럼 보드 마운팅 후에 쉽게 깨지지 않는다.
도 1은 본 발명의 첫 번째 실시예에 따른 반도체 소자의 평면도;
도 1a는 도 1에서 선 1a-1a을 따라 취한 단면도;
도 1b는 도 1에서 선 1b-1b를 따라 취한 단면도;
도 2는 본 발명의 두 번째 실시예에 따른 반도체 소자의 평면도;
도 2a는 도 2에서 선 2a-2a를 따라 취한 단면도;
도 3은 본 발명의 세 번째 실시예에 따른 반도체 소자의 평면도;
도 3a는 도 3에서 선 3a-3a를 따라 취한 단면도; 그리고
도 3b는 도 3에서 선 3b-3b를 따라 취한 단면도이다.
상응하는 도면부호들은 여러 도면들에 있어서 상응하는 부분을 나타낸다. 여기서 본 발명의 몇 가지 실시예를 설명하지만, 본 발명의 범위를 어떤 방식으로든 제한하는 것으로 해석되어서는 안 될 것이다.
도 1은 반도체 소자(100)에서 본 발명의 첫 번째 실시예를 설명한다. 상기 소자는 반도체 다이(102)에 결합된 솔더러블 물질로 만들어진 루프 접촉부(loop contacts)(104, 108, 109)를 가지고 있는 패키지형 반도체(100)이다. 반도체 다이(102)는 게이트, 소스, 드레인 영역을 가지는 플립 칩(Flip chip)이다. 소스와 게이트 영역은 반도체 다이(102)의 상부에, 드레인 영역은 하부 표면에 위치하고 있다. 드레인 영역은 다이 접착 패드와 드레인 연결을 형성하며, 다이 접착 패드(101)에 접착되어 있다. 반도체 다이(102)의 소스와 게이트 영역은 루프 접촉부(104, 108, 109)를 가진다. 상기 소자(100)는 다수의 루프 접촉부(104)와 단일 루프 선 접촉부(108, 109)를 나타낸다. 루프 접촉부는 아래에서 설명된 서머소닉 볼 본딩 방법을 사용하여 반도체 다이(102)에 접착된다.
도 1과 1a를 참조하면, 솔더 표면을 생성하기 위하여 소자(100)는 반도체 다이(102)에 다수의 루프를 만들기 위해, 전선의 단일 선이 사용된 전선으로 구성된 다수의 루프 선 접촉부를 가질 수 있다. 이러한 실시 예에 따르면, 전선은 다수의 루프 접촉부(104)와 단일 루프 접촉부(108, 109)를 만들기 위해 사용된다.
서머소닉 볼 본딩 공정은 구형 체를 본딩 포인트(point)에 생성함으로써 볼 결합(106)을 만든다. 일반적으로, 루프 접촉부에 사용되는 전선은 속이 빈 모세관을 관통한다. 전자 프레임 오프(electronic frame off) 시스템은 전선이 지나가는 모세관 밑의 전선을 용융시킨다. 상기 언급된 이 전선은 볼 결합을 생성하기 위한 구형체로 응고된다. 모세관 밑의 용융된 전선은 소성 변형(Plastic deformation)과 원자 상호 확산(interdiffusion)을 고려한 충분한 힘으로 결합이 형성되고 있는 물질로 밀고 들어간다. 서머소닉 본딩 공정은 100℃ 내지 280℃ 사이의 온도를 사용 하고, 전선이 결합된 소자 위에 실장된 받침대에 열이 제공된다. 구리 선을 사용할 때 구리는 즉시 산화되기 때문에, 본딩 공정은 산화작용을 예방하기 위해 비활성 분위기에서 수행되어야 한다.
소성 변형과 원자 상호확산을 발생하기 위하여 초음파 에너지를 적용함에 따라, 첫 번째 본드가 형성된 후에 모세관을 통해 전선을 넣고 전선이 다시 두 번째 본딩 영역으로 들어가고 가열될 때까지 모세관이 구축된다. 두 번째 본드는 전선이 공급되는 모세관 형상의 소자 때문에 웨지 모양으로 형성된다. 이 공정은 필요한 만큼 많은 루프 접촉면을 생성하도록 계속될 수도 있다. 마지막 루프 접촉면에서, 전선 클램프(Clamp)는 접속되고 모세관은 마지막 웨지 본드 바로 위에서 전선을 끊는다.
도 1과 도 1a를 참조하면, 반도체 소자(100)는 볼 본드(106)와 세 개의 루프 접촉부(104), 그리고 세 개의 루프 접촉부(104) 사이의 두 개의 웨지 본드(107)들을 가진다. 이런 다수의 루프 접촉부(104)는 반도체 다이(102)의 소스 영역에 형성되어 소스 접촉부를 생성한다. 어플리케이션 보드(114)는 솔더(110)에 의해 루프 접촉부(103, 108, 109)에 부착되었고, 반도체 다이(102)는 접착 물질(111)에 의해 다이 접착 패드(101)에 결합된 다이다. 더욱이 첫 번째 실시예에서는 캡슐화 물질(112)로 어플리케이션 보드(114)를 접착하기 전에 소자의 캡슐화에 의해 패키지 형태로 될 수도 있다.
도 1과 1b를 참조하면, 도 1b는 도 1의 소자(100)의 단일 루프 접촉부(108, 109)의 단면도를 나타낸다. 단일 루프 접촉부(108)는 반도체 다이(102)의 소스 영 역에 형성되어 소스 루프 접촉부라 한다. 도 1과 1b의 중앙의 단일 루프 접촉 부(109)는 다이(102)의 게이트 영역에 형성된다.
루프 접촉부(104, 108, 109)는 금이나 구리선 또는 따른 적당한 물질로 구성될 수 있다. 더욱이, 전선은 니켈, 팔라듐, 구리 또는 다른 솔더러블 금속으로 덮여질 수 있다.
도 2와 2a의 두 번째 실시예를 보면, 도 2의 반도체 소자(200)는 솔더러블 루프 접촉부(204, 208, 209)는 반도체 다이(202)의 스터드 범프에 형성된다. 반도체 다이(202)는 소스와 게이트 영역을 포함한 상부 표면과 다이(202)의 하부 표면에 드레인 영역을 가진다. 도 2a를 참조하면, 반도체 다이(202)의 드레인 영역은 다이 접착 패드(201)와 스터드 범프(214, 215)의 루프 접촉부(204, 208)에 접착된다. 루프 접촉부(204, 208, 209)는 상기 설명된 공정과 유사한 서머소닉 볼 본딩에 의해 형성되지만, 반도체 다이(202)는 스터드 범프(214, 215)를 가진다. 스터드 범프는 본딩 공정 동안 반도체 다이(202)를 보호하기 위해 사용된다. 상기에서 언급된 바에 의해, 서머소닉 본딩 공정은 소성 변형을 일으키기 위한 열과 전선의 원자 상호확산 그리고 전선이 결합되고 있는 물질을 필요로 한다. 열을 직접 반도체 다이에 가하는 것은 다이 손상을 가져온다. 따라서, 다이(202)의 스터드 범프(214, 215)에 전선을 본딩하는 것은 다이(202)를 보호할 수 있거나 손상을 최소화할 수 있다.
도 2는, 루프 접촉부(204, 208, 209)를 형성하기 위한 서머소닉 볼 본딩 기술을 사용한 전선 본딩에 의한 다수의 루프 접촉부(204)와 단일 루프 접촉부(208, 209)를 가진 반도체 소자(200)를 보여준다. 다수의 루프 접촉부(204)와 단일 루프 접촉부(208)은 다이(202)의 소스 범프(214)에 형성되고, 중간의 단일 루프 접촉부(209)는 반도체 다이(202)의 게이트 범프(215)에 형성된다. 선 접촉부(204, 208, 209)를 만들기 위해 사용되는 전선은 구리, 금, 또는 다른 적당한 금속 선일 수 있고, 더 나아가서 구리, 니켈, 팔라듐, 또는 백금과 같은 솔더러블 금속으로 덮여질 수도 있다.
도 2a는 소스 스터드 범프(214)가 그려진 다수의 루프 접촉부(204)의 단면도를 나타낸다. 그러나 다수의 루프 접촉부(204)는 반도체 다이(202)에 하나의 본드(206)를 직접적으로 가진다. 서머소닉 볼 본딩 공정에서 설명된 초기의 볼 본드(206)는 반도체 다이(202)로 직접 형성된다. 또한 반도체 소자(202)는 역시 소재의 캡슐화를 통해 드러난 루프 접촉부(204, 208, 209)를 남겨두고 패키지 형태로 될 수 있다. 드러난 루프 접촉부(204, 208, 209)는 게이트와 소스 연결로 사용된다.
도 3, 3a와 3b를 참조하면, 본 발명의 세 번째 실시예는 리본으로 구성된 루프 접촉부(304, 308, 309)와 반도체 소자(300)를 나타낸다. 그러나, 전선이 리본의 공간에 사용될 수도 있다. 더욱이 리본은 울트라소닉 웨지 본딩 기술을 사용하여 반도체 다이(302)에 직접 결합 된다. 반도체 다이(302)는 반대 표면에 소스와 게이트 영역을 가지고 한 표면에 드레인 영역을 가진다. 다이(302)의 드레인 영역은 솔더(310)에 의해 다이 접착 패드(301)에 접착된다. 상기 소자(300)는 단일 루프 접촉면(308, 309)과 다이(302)에 직접 연결된 다수 루프 접촉면(304)을 가진다.
도 3a는 도 3에 있는 소자(300)의 다수의 루프 접촉부의 단면도를 나타낸다. 다수의 루프 접촉부(304)는 울트라소닉 본딩 방법을 사용하여 직접 다이(302)에 결합 된다. 울트라소닉 본딩은 본딩 툴로 비스듬히 리본이나 전선을 공급함으로써 웨지 본드(306)를 생산한다. 전선은 반도체 다이(302)에 고정되고 울트라소닉 에너지는 전선과 다이(302) 사이에서 본드(306)를 생성하기 위해 공급된다. 이 공정은 서머소닉 볼 본딩 공정의 높은 온도를 필요로 하지않는다. 울트라소닉 본딩은 대략 25℃를 필요로 한다. 공정은 루프 접촉부의 바람직한 수를 생성하기 위해 반복된다. 전선은 본딩 툴과 함께 설치된 전선 커터(cutter)를 사용하거나 적소에서 클램프를 보유하는 클램프를 사용하여 잘리고 그것이 상승함에 따라 전선을 찢기 위해 본딩 툴을 세운다.
도 3a, 이 투시도는 캡슐화 물질(312)을 통하여 드러난 루프 접촉부(304)를 남겨두고 캡슐화된 소자(300)와 반도체 다이(302)에 결합 된 다수의 루프 접촉부(304)를 나타낸다.
도 3b는 소스와 게이트 영역 위의 반도체 다이(302)에 결합 되어 단일 소스 루프 접촉부(308)와 단일 게이트 루프 접촉부(309)를 생성하는 단일 루프 접촉부(308, 309)의 단면도를 나타낸다. 다시 소자(300)는 다른 표면으로의 솔더링을 위해, 드러난 루프 접촉부(308, 309)를 남겨두고 반도체 다이(302)를 덮으며 캡슐화 물질(312)로 패키지 형태로 된다. 도 3은 리본 루프 접촉부(304, 308, 309)를 나타내지만, 상기 언급된 것처럼, 전선은 이 실시 예에서 리본으로 대치될 수도 있다. 전선이나 리본은 알루미늄, 구리, 또는 금과 같은 적당한 솔더러블 금속일 수 있고, 구리, 니켈, 팔라듐, 또는 백금으로 더 덮일 수 있다.
이 소자들의 제조방법은 솔더러블 금속 코팅(Coating)을 가지는 반도체 소자와 범프나 볼을 가지는 이전의 반도체 소자를 넘어 상당한 이점을 가진다. 첫 번째 실시예를 참조하면, 제조방법은 반도체 다이의 드레인 영역을 다이 접착 패드에 접착하는 것을 필요로 한다. 그 후에 전선은 이전에 설명한 서머소닉 볼 본딩 기술을 사용하여 반도체 다이의 소스 영역에 결합 된다. 전선 본딩 공정은 다이에 단일 루프나 다수의 루프 접촉부를 만들기 위해 사용될 수 있다. 첫 번째 실시 예에서 본 바와 같이 반도체 다이에 단일과 다수의 루프 접촉부가 있다. 루프 선 접촉부 물질은 선택적으로 다른 솔더러블 금속으로 덮여진 솔더러블 금속일 수도 있다. 예를 들어, 전선은 구리나 금일 수도 있고, 구리, 니켈, 팔라듐, 또는 백금으로 덮일 수 도 있다. 루프 접촉부가 다이에 결합 된 후에, 다이는 선택적으로 캡슐화 물질을 통해 드러난 루프 접촉부를 남겨두고, 캡슐화 물질로 덮여질 수도 있다. 그러면 루프 접촉부는 솔더에 의해 어플리케이션 보드에 접착된다.
두 번째 실시 예의 소자를 제조하는 방법은 반도체 다이에 초기의 볼 본드가 형성된 후에, 스터드 범프나 볼을 가지고 스티치(Stitch)나 웨지 본드가 형성된 반도체 다이의 사용을 필요로 한다. 다이의 드레인 영역은 다이 접착 패드에 접착된다. 그러면 서머소닉 본딩 기술을 사용하여 전선은 반도체 다이의 스터드 범프에 형성된 다른 본드와 같이 반도체 다이에 볼 모양으로 결합된다. 이 실시예에 사용된 전선은 다시 구리나 금과 같은 솔더러블 금속 전선이고 구리, 니켈, 팔라듐, 또는 백금과 같은 솔더러블 금속으로 덮일 수 있다. 그 후에, 반도체 소자는 선택적 으로 물질을 통해 드러난 루프 접촉부를 남겨두고 적당한 캡슐화 물질을 사용하여 캡슐화 될 수 있다.
세 번째 실시예에 관하여는, 첫 번째 실시예에서와 같이, 반도체 소자는 솔더러블 루프 접촉면을 가지고 반도체 다이에 결합 된다. 그러나, 상기 다이는 첫 번째로 다이 접촉 패드에 접착된다. 그러면, 루프 접촉 면은 울트라소닉 본딩 기술을 사용하여 다이에 형성된다. 이 실시예에서의 루프 접촉면은 구리, 금, 또는 알루미늄과 같은 솔더러블 금속으로 만들어진 전선이나 리본에 의해 구성된다. 또한 전선이나 리본은 구리, 니켈, 팔라듐, 또는 백금과 같은 다른 솔더러블 금속으로 덮여질 수 있다. 리본이나 전선은 울트라소닉 에너지를 사용하여 다이에 직접적으로 결합되고 웨지 본드를 형성한다. 루프 접촉 부는 단일 루프, 다수의 루프, 또는 양자로 다이에 형성될 수 있다. 세 번째 실시예는 다이의 소스 영역에 다수와 단일의 루프 접촉부를 가지고 단일의 게이트 루프 접촉부를 가진다. 상기 소자는 선택적으로 캡슐화 물질을 통하여 드러난 루프 접촉부를 남겨두고 캡슐화 물질로 덮여질 수 있다.
본 발명이 모스펫(MOSFET) 소자의 실시예로 설명되었으나, 당해 기술분야의 당업자는 본 발명이 다이오드, IGBTs, 사이리스터(Thyristor), 그리고 바이폴라 접합 트랜지스터와 같은 다른 반도체 다이로도 사용될 수 있음을 알 수 있을 것이다.
본 발명은 비록 바람직한 실시예를 참조하여 설명하였으나, 당해 기술분야의 당업자는, 다양한 응용이 있을 수 있고 균등성이 본 발명의 기술영역으로부터 벗어 남이 없는 특정 상황을 채택하기 위한 구성요소로 대신될 수 있다. 그러므로, 본 발명은 발명을 실행하도록 심사 숙고된 최적의 방법으로서 발표된 특정 실시예들로 제한됨이 없도록 의도되나, 본 발명은 청구항의 기술영역과 기술사상 내에 있는 모든 실시예들을 포함할 것이다.
Claims (24)
- 반도체 소자로서;a. 1개 이상의 터미널을 가지는 첫째 표면과 적어도 하나의 터미널을 가지는 둘째 표면을 포함하는 반도체 다이;b. 리드를 가진 다이 접착 패드;c. 상기 반도체 다이의 첫 째 표면의 터미널 중 하나로의 적어도 하나의 루프 솔더러블 접촉부를 포함하는 것을 특징으로 하는 반도체 소자.
- 제 1항에 있어서,상기 솔더러블 루프 접촉부는 금속 전선으로 형성되는 것을 특징으로 하는 반도체 소자.
- 제 2항에 있어서,상기 전선은 구리, 알루미늄, 그리고 금으로 구성되는 그룹으로부터 선택된 금속인 것을 특징으로 하는 반도체 소자.
- 제 3항에 있어서,상기 전선은 솔더러블 물질로 덮여지는 것을 특징으로 하는 반도체 소자.
- 제 4항에 있어서,상기 솔더러블 물질은 구리, 니켈, 팔라듐, 그리고 백금으로 구성되는 그룹으로부터 선택되는 금속인 것을 특징으로 하는 반도체 소자.
- 제 5항에 있어서,어플리케이션 보드를 더 포함하는 것을 특징으로 하는 반도체 소자.
- 제 3항에 있어서,상기 솔더러블 루프 접촉부는 서머소닉 볼 본딩에 의해 형성되는 것을 특징으로 하는 반도체 소자.
- 제 3항에 있어서,상기 솔더러블 루프 접촉부는 울트라소닉 웨지 본딩으로 형성되는 것을 특징으로 하는 반도체 소자.
- 제 4항에 있어서,상기 솔더러블 루프 접촉부는 서머소닉 볼 본딩으로 결합 되는 것을 특징으로 하는 반도체 소자.
- 제 4항에 있어서,상기 솔더러블 루프 접촉부는 울트라소닉 웨지 본딩에 의해 형성되는 것을 특징으로 하는 반도체 소자.
- 제 1항에 있어서,상기 솔더러블 루프 접촉부는 리본으로 형성되는 것을 특징으로 하는 반도체 소자.
- 제 11항에 있어서,상기 리본은 구리, 알루미늄, 그리고 금으로 구성되는 그룹으로부터 선택되는 금속인 것을 특징으로 하는 반도체 소자.
- 제 12항에 있어서,상기 리본은 솔더러블 물질로 덮이는 것을 특징으로 하는 반도체 소자.
- 제 13항에 있어서,상기 솔더러블 물질은 구리, 니켈, 팔라듐, 그리고 백금으로 구성되는 그룹으로부터 선택되는 금속인 것을 특징으로 하는 반도체 소자.
- 제 14항에 있어서,상기 솔더러블 루프 접촉부는 울트라소닉 본딩에 의해 형성되는 것을 특징으로 하는 반도체 소자.
- 제 1항에 있어서,패키지 물질을 더욱 포함하는 것을 특징으로 하는 반도체 소자.
- 제 1항에 있어서,상기 반도체 다이는 다이오드, MOSETs, IGBTs, 사이리스터, 그리고 바이폴라 접함 트랜지스터로 구성되는 그룹 중 하나인 것을 특징으로 하는 반도체 소자.
- 루프 선 접촉부를 가지는 반도체 소자의 제조방법에 관한 것으로서;a. 반도체 다이, 리드를 가진 다이 접착 패드, 그리고 전선이나 리본 형식의 솔더러블 루프 접촉부 물질을 제공하는 단계;b. 다이를 다이 접착 패드에 접착하는 단계;c. 루프 모양의 루프 접촉 물질을 다이에 본딩하는 단계를 포함하는 것을 특징으로 하는 루프 선 접촉부를 가지는 반도체 소자의 제조방법.
- 제 18항에 있어서,상기 본딩 단계는 서머소닉 본딩 단계로서, 상기 루프 접촉부는 구리, 금, 그리고 알루미늄 그룹으로부터 선택된 금속 전선으로 형성된 솔더러블 루프 접촉부인 것을 특징으로 하는 루프 선 접촉부를 가지는 반도체 소자의 제조방법.
- 제 19항에 있어서,상기 전선은 구리, 니켈, 팔라듐, 백금으로 구성되는 그룹으로부터 선택된 솔더러블 금속으로 덮여진 전선인 것을 특징으로 하는 루프 선 접촉부를 가지는 반도체 소자의 제조방법.
- 제 20항에 있어서,상기 서머소닉 본딩은 다수의 스티치 아래의 볼 위의 본드 스티치로 구성되는 것을 특징으로 하는 루프 선 접촉부를 가지는 반도체 소자의 제조방법.
- 제 18항에 있어서,상기 본딩 단계는 울트라 소닉 본딩으로서, 상기 루프 선 접촉부는 알루미늄, 구리, 그리고 금으로 구성되는 그룹으로부터 선택된 금속 전선이나 리본인 것을 특징으로 하는 루프 선 접촉부를 가지는 반도체 소자의 제조방법.
- 제 22항에 있어서,상기 전선이나 리본은 구리, 니켈, 팔라듐, 그리고 백금으로 구성되는 그룹으로부터 선택된 솔더러블 금속으로 덮여진 것을 특징으로 하는 루프 선 접촉부를 가지는 반도체 소자의 제조방법.
- 제 18항에 있어서,상기 반도체 다이는 다이오드, MOSFETs, IGBTs, 사이리스터, 그리고 바이폴라 접합 트랜지스터로 구성되는 그룹 중 하나인 것을 특징으로 하는 루프 선 접촉부를 가지는 반도체 소자의 제조방법.
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US78613906P | 2006-03-27 | 2006-03-27 | |
US60/786,139 | 2006-03-27 | ||
US11/690,900 US20070222087A1 (en) | 2006-03-27 | 2007-03-26 | Semiconductor device with solderable loop contacts |
US11/690,900 | 2007-03-26 |
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KR20090003251A true KR20090003251A (ko) | 2009-01-09 |
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KR1020087023034A KR20090003251A (ko) | 2006-03-27 | 2007-03-27 | 솔더러블 루프 접촉부를 가진 반도체 소자 |
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US (1) | US20070222087A1 (ko) |
JP (1) | JP2009531869A (ko) |
KR (1) | KR20090003251A (ko) |
DE (1) | DE112007000781T5 (ko) |
TW (1) | TW200805532A (ko) |
WO (1) | WO2007112393A2 (ko) |
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DE102016122318A1 (de) * | 2016-11-21 | 2018-05-24 | Infineon Technologies Ag | Anschlussstruktur eines Leistungshalbleiterbauelements |
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US11031321B2 (en) | 2019-03-15 | 2021-06-08 | Infineon Technologies Ag | Semiconductor device having a die pad with a dam-like configuration |
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US11791274B2 (en) * | 2020-06-16 | 2023-10-17 | Intel Corporation | Multichip semiconductor package including a bridge die disposed in a cavity having non-planar interconnects |
US11887962B2 (en) | 2020-06-16 | 2024-01-30 | Intel Corporation | Microelectronic structures including bridges |
EP4084063A1 (en) * | 2021-04-30 | 2022-11-02 | Infineon Technologies Austria AG | Semiconductor module with bond wire loop exposed from a moulded body and method for fabricating the same |
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2007
- 2007-03-26 US US11/690,900 patent/US20070222087A1/en not_active Abandoned
- 2007-03-27 TW TW096110559A patent/TW200805532A/zh unknown
- 2007-03-27 KR KR1020087023034A patent/KR20090003251A/ko not_active Application Discontinuation
- 2007-03-27 WO PCT/US2007/065025 patent/WO2007112393A2/en active Application Filing
- 2007-03-27 JP JP2009503217A patent/JP2009531869A/ja active Pending
- 2007-03-27 DE DE112007000781T patent/DE112007000781T5/de not_active Withdrawn
Also Published As
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WO2007112393A2 (en) | 2007-10-04 |
DE112007000781T5 (de) | 2009-01-29 |
TW200805532A (en) | 2008-01-16 |
WO2007112393A3 (en) | 2008-10-09 |
JP2009531869A (ja) | 2009-09-03 |
US20070222087A1 (en) | 2007-09-27 |
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