KR20080109556A

KR20080109556A - Probe substrate assembly

Info

Publication number: KR20080109556A
Application number: KR1020070058017A
Authority: KR
Inventors: 채종현
Original assignee: (주)엠투엔
Priority date: 2007-06-13
Filing date: 2007-06-13
Publication date: 2008-12-17
Also published as: WO2008153342A3; WO2008153342A2

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to probe cards for use in semiconductor inspection equipment, and more particularly, to probe cards having a probe substrate assembly capable of collectively and accurately electrically connecting a probe inserted into a probe substrate to a spatial transducer.

According to an aspect of the present invention, there is provided a probe substrate assembly in which a probe in contact with a test object is inserted into and connected to the probe substrate, the probe substrate having a plurality of contact hole arrays penetrating in a vertical direction, and the plurality of contact hole arrays connected to the probe substrate. A reinforcement substrate having an opening formed therein, and a probe alignment substrate connected to the reinforcement substrate and having a plurality of contact holes penetrating in a vertical direction, wherein one end of the probe is a contact hole of the probe substrate and a reinforcement substrate of the reinforcement substrate. A probe substrate assembly is inserted into and connected to an opening and a contact hole of the probe alignment substrate.

Description

Probe Board Assembly {PROBE SUBSTRATE ASSEMBLY}

1 is a perspective view showing a schematic structure of a conventional probe card.

2 is a perspective view illustrating a method of bonding a reinforcing substrate to a conventional probe substrate.

3 is a cross-sectional view of a state in which a conventional probe substrate and a space transducer are electrically connected.

4A and 4B are vertical cross-sectional views showing probe structures inserted into and connected to a probe substrate.

5A to 5I are process flowcharts for briefly explaining a method for manufacturing a probe.

6A and 6B are perspective views showing the shape before and after machining the tip of the probe tip.

7A to 7J are process flowcharts illustrating a process of manufacturing a probe substrate assembly according to an embodiment of the present invention.

8 is a cross-sectional view of a state in which the probe substrate assembly and the space transducer are electrically connected according to an embodiment of the present invention.

9 is a perspective view showing a schematic structure of a probe card according to an embodiment of the present invention.

In general, a probe card is a device used to inspect whether a semiconductor device is normal or defective during a semiconductor device manufacturing process such as a semiconductor memory, a display, or after completing a manufacturing process. In particular, the probe card electrically connects the wafer and the semiconductor inspection equipment, transmits an electrical signal applied from the semiconductor inspection equipment to the semiconductor device on the wafer, and transmits a response signal from the semiconductor device on the wafer to the semiconductor inspection equipment. Inspect for defects.

A probe card includes a plurality of probes, and as the size of semiconductor devices becomes smaller, the size of wafer chip pads and the gap between the pads become smaller, so that researches for minimizing the distance between probes in contact with wafer chips are also made. In the meantime, development is underway.

First, the probe 110 includes an upper end 111 including a probe tip contacting a wafer chip to be inspected, and a connection pin 112 connected to the space transducer 120. The upper end 111 and the connection pin 112 of the probe 110 are made of an electrically conductive material. In addition, the probe 110 may also include an elastic part (not shown) that disperses the stress generated when the upper end 111 is in contact with the wafer chip to prevent plastic deformation of the probe.

As shown in FIG. 1, the probe card is electrically connected to a space transformer 120 through a connection hole 112 of the probe 110 through a contact hole of the probe substrate 100. 120 is electrically connected to a printed circuit board (PCB) 140 through a connection pin 132 such as a pogo pin in a pogo block 130. At this time, the printed circuit board 140 includes a circuit for transmitting a signal of the semiconductor inspection equipment to the probe tip in contact with the wafer chip or a signal transmitted from the probe tip to the semiconductor inspection equipment.

Here, the space converter 120 is formed of a multi layer ceramic (MLC) substrate. The space converter 120 includes an upper pad 122 formed on the uppermost substrate upper surface of the multilayer substrate and a lower pad 126 formed on the lowermost substrate lower surface of the multilayer substrate. In this case, the upper pad 122 is connected to the connecting pin 112 of the probe 110 penetrating the probe substrate 100, and the lower pad 126 is connected to the printed circuit board 140 such as a pogo pin. It is connected to the connecting pin 132. In addition, a contact 124 is formed in each contact hole of the multi-layer substrate (eg, the ceramic sheet layer) of the space converter 120, and the upper pad 122 and the lower pad 126 are formed by the contact 124. ) Are electrically connected to each other. In this case, the lower pad 126 and the contact 124 may be connected to each other through connection wires (not shown) which are simultaneously manufactured when the lower pad 126 is manufactured.

On the other hand, since the probe substrate 100 is generally weak in rigidity, the probe substrate 100 is easily deformed by the load pressure generated when the plurality of probe tips come into contact with the wafer chip. As a result, in the probe card illustrated in FIG. 1, a problem arises in that electrical connection between the connection pin 112 of the probe 110 and the upper pad 122 of the space transducer 120 is not uniform.

In order to prevent such deformation of the probe substrate 100, as shown in FIG. 2, the opening 152 may be formed of silicon, glass, ceramic, or metal and allow the connection pin 112 of the probe to pass therethrough. The method of attaching the formed reinforcement board | substrate 150 to the lower end of the probe board | substrate 100 is proposed. At this time, the reinforcing substrate 150 serves to reinforce the weak rigidity of the probe substrate 100.

In other words, when the plurality of probe tips are in contact with the wafer chip, the reinforcing substrate 150 may prevent deformation of the probe substrate 100 so that the connecting pin 112 of the probe 110 and the upper pad of the spatial transducer 120 are prevented. The electrical connection between the 122 is good.

However, even in this case, as shown in FIG. 3, the plurality of probes 110 are inserted into and coupled to the probe substrate 100 to collectively connect the plurality of probes 110 to the upper pads 122 of the space converter 120. The connecting pin 112 of the probe 110 is placed on the upper pad 122 of the space transducer 120 because the lower end of the connecting pin 112 of the probe 110 can be freely moved when it is connected thereto. The problem is that it is difficult to align correctly.

Therefore, the connecting pins of the plurality of probes are accurately aligned on the upper pad of the spatial transducer without the deformation of the probe substrate by the load pressure generated when the plurality of probes and the wafer chip contact each other, and the plurality of probes are collectively Therefore, there is an urgent need for a probe card including a probe substrate that can be connected to a space transducer.

One embodiment of the present invention is derived to solve the above-described problems of the prior art, a plurality of probes and the upper pad of the space transducer can be accurately aligned in a batch while reinforcing the rigidity of the probe substrate to which the probe is inserted It is a technical object of the present invention to provide a probe substrate assembly.

In addition, an embodiment of the present invention provides a probe card including a probe substrate assembly for reinforcing rigidity of the probe substrate into which the probe is inserted and allowing the plurality of probes and the upper pads of the spatial transducers to be accurately and collectively aligned. It is technical problem to do.

As a technical means for achieving the above object, according to the first aspect of the present invention, in the probe substrate assembly in which the probe in contact with the object to be inserted is connected, the probe substrate formed with a plurality of contact hole array penetrating in the vertical direction And a reinforcement substrate connected to the probe substrate and having an opening formed to include the array of contact holes, and a probe alignment substrate connected to the reinforcement substrate and having a plurality of contact holes penetrating in a vertical direction. One end of the probe provides a probe substrate assembly to be inserted into the contact hole of the probe substrate, the opening of the reinforcing substrate and the contact hole of the probe alignment substrate in turn.

In addition, an insulating thin film may be formed on the surface of the probe substrate and the side surfaces of the plurality of contact holes.

The insulating thin film may be formed of at least one of an insulating film made of a silicon oxide film, a silicon nitride film, and a polymer.

In addition, the reinforcing substrate may have a plurality of opening arrays respectively corresponding to the plurality of contact hole arrays formed on the probe substrate.

In addition, the opening of the reinforcing substrate is formed through machining, it may have an elliptical or rectangular shape.

In addition, the probe alignment substrate may be the same substrate as the probe substrate.

In addition, the probe substrate and the reinforcement substrate may be bonded by any one of a direct bonding process, an anodic bonding process, and an intermediate layer bonding process.

In addition, the reinforcing substrate and the probe alignment substrate may be bonded by any one of a direct bonding process, an anodic bonding process, or an interlayer insertion bonding process.

In addition, the lower end of the probe may be bonded to each of the contact hole of the probe substrate and the contact hole of the probe alignment substrate by using a bonding material made of UV or thermal epoxy.

According to a second aspect of the invention, there is also provided a probe card comprising a probe substrate assembly according to the first aspect of the invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and like reference numerals designate like parts throughout the specification.

Throughout the specification, when a part is "connected" to another part, this includes not only "directly connected" but also "electrically connected" with another element in between. . In addition, when a part is said to "include" a certain component, which means that it may further include other components, except to exclude other components unless otherwise stated.

4A and 4B are vertical cross-sectional views illustrating probe structures inserted into and connected to a probe substrate.

As shown in FIG. 4A, the probe 1 is connected to the probe tip 10 that is in direct contact with the wafer chip, and is bent to the probe tip 10 to buffer the load pressure when the probe tip 10 is in contact with the wafer chip. An elastic portion 12, a base portion 13 connected to the elastic portion 12 and horizontally aligned with the probe substrate, and connected vertically to the base portion 13 and spaced through the probe substrate of the probe card. Connection pins 14 connected to a transducer (Multi Layer Ceramic (MLC) substrate) or other substrate (not shown).

At this time, the probe tip 10, the elastic portion 12, the base portion 13 and the connecting pin 14 are made of an electrically conductive material.

The elastic part 12 is composed of an elastic body and consists of a bar part 12a extending perpendicularly to the probe tip 10 and a bent part 12b connected in an S shape to the base part 13. At this time, the bent portion 12b of the elastic portion 12 connected to the base portion 13 adds the auxiliary pattern 12c so that the stress caused by the load pressure generated when the plurality of probes 1 comes into contact with the wafer chip. Concentration is prevented to prevent plastic deformation of the probe 1.

And the elastic part 12 and the connection pin 14 are formed above and below the base part 13, especially in the position adjacent to each other.

Therefore, the probe 1 can buffer the load pressure applied to the probe tip 10 by the elastic part 12 which is bent in S shape to the probe tip 10 when it is in contact with the wafer chip.

In addition, an alignment is formed in the lower portion of the connecting pin 14 in a pattern projecting toward the connecting pin 14 from the connecting elastic body portion 18 and the base portion 13 to cushion the load pressure generated when contacting the wafer chip. It further includes a pin 16. Therefore, when the probe 1 is inserted into and connected to the probe substrate by the alignment pin 16, the alignment position of the probe 1 can be automatically found in the vertical direction of the contact hole.

4B is a vertical sectional view of a probe structure having another configuration.

The tilt prevention portion 17 integrally integrates the probe tip 10 and the base portion 13 with each other so that the probe tip 10 does not cause rotation about a portion of the elastic portion 12 when the probe tip 10 is pressed by contacting the object under test. In addition to providing a rebound force to the elastic force in the longitudinal direction of the probe tip (10). That is, the tilt prevention unit 17 guides vertical movement of the probe tip 10 by elastic force when the probe tip 10 is pressed, but suppresses horizontal movement as much as possible, thereby preventing the tip of the probe 10 from tilting. do.

The tilt protection 17 is uniform on the probe tip 10 with an upper end spaced from the end of the elastic portion 12 that is connected to the side of the probe tip 10 so as to advantageously prevent the probe tip 10 from causing rotation. Location, preferably at the bottom.

On the other hand, the tilt prevention unit 17 is connected to be spaced apart upward from the base portion 13 can minimize the interference with the base portion 13 during compression and restoration. In addition, the spaced support 19 which is integrally connected to the base portion 13 is formed to extend perpendicular to the bottom to facilitate the scrub size change design of the probe 1 by changing the operating point on the base portion 13 ) May be further formed on the tilting prevention unit 17.

5A to 5I are process flowcharts for briefly explaining a method for manufacturing a probe. An embodiment of a method for manufacturing a probe by a MEMS method will be described with reference to these drawings.

First, as shown in FIG. 5A, a metal or metal as the conductive layer 32 by physical vapor deposition (PVD) or an evaporator on a silicon wafer 30 in the {100} direction as a semiconductor substrate. Forms an alloy.

As shown in FIG. 5B, a photoresist layer 34 is applied on the conductive layer 32. As a method of applying the photoresist layer 34, a spin coating method may be used, which is a method of spray coating a photoresist on the silicon wafer 30 while rotating the silicon wafer 30.

Next, as shown in FIG. 5C, the mask 36 in which the probe pattern 38 is defined on the photoresist layer 34 is aligned in the {100} direction of the silicon wafer 30, and then, an ultraviolet exposure apparatus or the like. To expose the photoresist layer 34. In this case, the mask 36 includes probes in a plurality of array units, and each probe is formed with a probe pattern 38 connected to one array. 4A and 4B, the probe pattern 38 includes a probe tip 10, an elastic portion 12 bent in an S shape, a base portion 13, a connecting pin 14, and the like. Include.

Subsequently, as shown in FIG. 5D, a developing process is performed on the exposed photoresist layer 34 to form a patterned photoresist layer 34a according to the probe pattern 38 of the mask 36.

As shown in FIG. 5E, a Ni alloy such as Ni or NiCo, NiFe, NiW, or the like is plated on the conductive layer 32 opened by the patterned photoresist layer 34a by performing a plating process or the like to form a probe structure ( 39).

After the plating process as described above, the cross section of the probe tip is planarized by a chemical mechanical polishing (CMP) process in the probe structure 39 of each array unit.

Thereafter, as illustrated in FIGS. 5F and 5G, an ashing process or a wet removal process may be performed to remove the patterned photoresist layer 34a, and then the silicon wafer 30 may be formed by a first wet etching process. Etch to remove. As a result, only the probe structure 39 and the conductive layer 32 below it remain and the silicon wafer 30 is removed.

Next, as shown in FIG. 5H, after the conductive layer 32 is removed from the probe structure 39 by performing the second wet etching process, the probe structures 39 connected in a plurality of arrays are separated for each array. do. In this case, the probe structures 39 separated by arrays process the two-dimensional probe tip ends into pyramid shapes using a wet etching process or a mechanical process while the probes are connected to each other.

Thereafter, as shown in FIG. 5I, each probe 1 is cut one by one with a cutter or the like from the probe structure 39 separated by each array and separated from each other.

On the other hand, the probe manufacturing process is a conductive layer material of the probe (for example, Ni, etc.) during the sacrificial layer removal process by using a silicon wafer instead of using a thin layer deposition process such as silicon oxide (SiO ₂ ) as in the prior art ) Can minimize the etching loss caused by the reaction with the sacrificial layer removal solution.

In addition, the mask 36 is aligned with the {100} direction of the silicon wafer 30 and subjected to an exposure and development process to form a patterned photoresist layer 34a defining a region of the probe pattern 38. Since the silicon wafer 30 has a large difference in etching speed depending on the orientation, the silicon wafer 30 under the conductive layer 32 is aligned by aligning the mask 36 so as to align the probe tip direction with the {100} direction of rapid etching speed. When etching, the process time can be shortened by increasing the etching speed of the silicon wafer 30 of the probe tip portion, and the silicon etching defect at the probe tip portion can be prevented.

6A and 6B are perspective views showing shapes before and after machining the tip of the probe tip, respectively.

The tip of the probe tip 10 is processed in a pyramid shape using a wet etching process or a mechanical process in an array unit to complete the probe.

As shown in FIG. 7A, the photoresist layer 42 is formed on the silicon wafer 41 by spin coating.

Thereafter, as shown in FIG. 7B, the photoresist layer 42 is exposed using a mask 44 having a plurality of contact hole array patterns on the photoresist layer 42. In this case, the photoresist layer 42 may be exposed using an ultraviolet exposure apparatus, an X-ray exposure apparatus, an electron beam exposure apparatus, or the like.

As shown in FIG. 7C, a development process is performed on the exposed photoresist layer 42 to form a patterned photoresist layer 42a according to the contact hole array pattern of the mask 44.

Next, as illustrated in FIG. 7D, a plurality of contact hole arrays through which the silicon wafer 41 is vertically penetrated by using an etching process on the silicon wafer 41 opened by the patterned photoresist layer 42a are formed. 46). In this case, a mask for a deep silicon etching process may use a hard mask such as a metal film or a silicon oxide film in addition to the photoresist layer.

Subsequently, as shown in FIG. 7E, an ashing process is performed to remove the patterned photoresist layer 42a. As another method of removing the photoresist layer 42a, there may be mentioned, for example, an O ₂ plasma method or a method using a sulfuric acid and hydrogen peroxide mixed solution. The insulating substrate 48 is thinly deposited on the entire silicon wafer 41 on which the contact hole array 46 is formed by a chemical vapor deposition (CVD) process to complete the probe substrate 40. In this case, the insulating thin film 48 may be formed by depositing a silicon nitride film or a silicon oxide film, and then further depositing a polymer-based insulating film. In addition, the insulating thin film 48 may be formed by depositing only a polymer-based insulating film without depositing a silicon nitride film and a silicon oxide film, or may be formed by depositing all of a silicon oxide film, a silicon nitride film, and a polymer-based insulating film.

Thereafter, as shown in FIGS. 7F and 7G, a substrate 51 made of silicon, glass, ceramic, or metal is provided, and the substrate 51 is processed by machining such as milling to probe substrate 40. The reinforcing substrate 50 having the open region 52 corresponding to the plurality of contact hole array 46 regions of the substrate is completed. The reinforcement substrate 50 serves to reinforce the weak rigidity of the probe substrate 40.

At this time, the open area 52 is formed by processing to pass through the substrate 51, the open area 52 may have an elliptical shape, a rectangular shape, but if the contact hole array 46 region may include It may be in the form. In an embodiment of the present invention, for convenience of description, the shape of the open area 52 is an elliptical shape that extends horizontally.

In addition, in one embodiment of the present invention, a plurality of open regions 52 are also formed to correspond to the plurality of contact hole array 46 regions of the probe substrate 40, but these contact hole array 46 regions may be included. As long as it is possible to reinforce the weak rigidity of the probe substrate 40, for example, one opening including all of the plurality of open regions 52 may be formed.

As shown in FIGS. 7H and 7I, the reinforcement substrate 50 having the open area 52 and the probe substrate 40 on which the contact hole array 46 on which the insulating thin film 48 is deposited is formed. Align each other so that the area of the contact hole array 46 is vertically included, and directly bond the probe substrate 40 and the reinforcement substrate 50, anodic bonding, and interlayer insertion bonding. layer bonding).

Subsequently, as shown in FIG. 7J, after forming the probe alignment substrate 60 in the same manner as the method of forming the probe substrate 40, the reinforcement substrate 50 having the probe substrate 40 attached to the top thereof. The probe alignment substrate 60 is bonded to the lower portion of the substrate. At this time, the reinforcing substrate 50 and the probe alignment substrate 60 may be bonded by direct bonding, anodical bonding, interlayer insertion bonding, and the like in the same manner as when the probe substrate 40 and the reinforcing substrate 50 are bonded. have. In the embodiment of the present invention, the probe substrate 40 and the reinforcement substrate 50 are bonded together, and then the reinforcement substrate 50 and the probe alignment substrate 60 are bonded together, but these three substrates may be bonded at the same time. Of course.

In addition, it is important to bond the contact hole 48 of the uppermost layer of the probe substrate 40 and the contact hole 68 of the lowermost layer of the probe alignment substrate 60 to be vertically and accurately aligned.

In this way, the probe substrate assembly 70 in which the probe substrate 40, the reinforcement substrate 50, and the probe alignment substrate 60 are sequentially connected is completed. Probe substrate assembly 70 according to an embodiment of the present invention is connected to the reinforcement substrate 50 for reinforcing the rigidity of the probe substrate 40 to the bottom of the probe substrate 40, a plurality of probes 1 is a wafer The probe substrate 40 may have a structure in which the probe substrate 40 does not deform even under load pressure generated when the chip contacts with the chip.

8 is a cross-sectional view of a state in which a probe substrate assembly and a space transducer are electrically connected to each other according to an embodiment of the present invention.

First, the connecting pin 14 of the probe 1 is inserted into the contact hole 48 of the probe substrate 40. At this time, since the contact hole 48 of the probe substrate 40 and the contact hole 68 of the probe alignment substrate 60 are exactly aligned with each other, the contact hole 48 and the reinforcement substrate 50 of the probe substrate 40 are aligned. The connecting pins 14 of the probes 1, which sequentially pass through the open region 52, of the probe 1, are naturally inserted into the contact holes 68 of the probe alignment substrate 60.

Although not shown, the base portion 13 to which the probe 1 and the probe substrate 40 are bonded, the connection pin 14 of the probe 1, and the probe alignment substrate 60 to which the probe alignment substrate 60 is bonded to each other. The contact hole 68 is coated with a bonding material such as UV or thermal epoxy.

On the other hand, a plurality of pads are formed on the upper and lower surfaces of the space transducer 80, respectively. The upper pad 81 formed on the upper surface of the space converter 80 corresponds to the probe 1, and the lower pad (not shown) formed on the lower surface corresponds to a printed circuit board (PCB), The pads on the face and the bottom face are electrically connected to each other by internal wiring of the space converter 80.

The upper pad 81 of the space converter 80 should have a high degree of integration as the wafer chip pitch decreases, and the lower pad of the space converter 80 has a relatively low degree of integration because it is connected to a printed circuit board. . As such, the space transducer 80 electrically connects pads formed on the upper and lower surfaces of the space transducer 80 and simultaneously converts pad pitches such as spacing between the pads.

The space converter 80 is formed of a multi-layer ceramic (MLC) substrate. Pads are formed on the surface of the substrate formed on the upper and lower surfaces of the MLC substrate, and contact holes formed in each of the MLC substrate are filled with silver paste to form a contact. Pads on both surfaces are electrically connected to each other. Of course, the structure of the above-described space transducer 80 is only one example, and in the present invention, the space transducer 80 is sufficient that pads on both surfaces are electrically connected through an MLC substrate.

Thereafter, the connecting pin 14 of the probe 1 whose lower end is fixed to the probe alignment board 60 is electrically connected to the upper pad 81 of the space transducer 80. According to one embodiment of the present invention, the probe 1 is inserted into and fixed to the probe substrate assembly 70, so that the connecting pin 14 of the probe 1 is also fixed to the probe alignment substrate 60. ) And the space transducer 80 can be accurately aligned, and a plurality of probes 1 can be easily connected to the upper pad 81 of the space transducer 80 at once.

First, the connecting pin 14 of the probe 1 is connected to the probe substrate 40 and the reinforcement substrate to the probe substrate assembly 70 including the probe substrate 40, the reinforcement substrate 50, and the probe alignment substrate 60. 50) and the probe alignment substrate 60 in order to pass through.

In this case, the contact hole 48 of the probe substrate 40, which is the uppermost part of the probe substrate assembly 70, and the contact hole 68 of the probe alignment substrate 60, which is the lowest end of the probe substrate assembly 70, are vertically aligned. Since the probe 1 can be easily inserted, the connecting pin 14 of the probe 1 is bonded to the contact hole 68 of the probe alignment substrate 60 with a bonding material such as epoxy. The lower end of the connection pin 14 of (1) can be fixed so that it cannot be moved.

Thereafter, the probe substrate assembly 70 into which the probe 1 is inserted is electrically connected to the space transducer 80. At this time, if the contact hole 68 of the probe alignment substrate 60 of the probe substrate assembly 70 and the upper pad 81 of the space transducer 80 are vertically aligned, the probe 1 is automatically connected accordingly. The pin 14 and the upper pad 81 of the space transducer 80 are correctly aligned. In addition, since the connecting pin 14 of the probe 1 is fixed to the contact hole 68 of the probe alignment board 60, a plurality of probes 1 are collectively placed on the upper pad 81 of the space transducer 80. Links can also be used to achieve correct alignment.

Next, the lower pad 82 of the space converter 80 is mounted directly to the printed circuit board (PCB) 200 through the pogo pin 91 in the pogo block 90 to form a probe card.

The foregoing description of the present invention is intended for illustration, and it will be understood by those skilled in the art that the present invention may be easily modified in other specific forms without changing the technical spirit or essential features of the present invention. will be. Therefore, it should be understood that the embodiments described above are exemplary in all respects and not restrictive.

The scope of the present invention is shown by the following claims rather than the above description, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included in the scope of the present invention. do.

According to one embodiment of the present invention described above, it is possible to provide a probe substrate assembly in which the probe substrate is not deformed by the load pressure when the probe contacts the wafer chip.

In addition, the lower end of the probe is accurately aligned with the upper pad of the spatial transducer and the lower end of the probe is fixed to provide a probe substrate assembly in which a plurality of probes and the spatial transducer can be collectively connected.

Claims

In the probe substrate assembly to which the probe in contact with the object to be inserted is connected;

A probe substrate having a plurality of contact hole arrays penetrating in a vertical direction;

A reinforcement substrate connected to the probe substrate and having an opening formed to include the plurality of contact hole arrays;

A probe alignment substrate connected to the reinforcement substrate and having a plurality of contact holes penetrating in a vertical direction;

One end of the probe is sequentially inserted into a contact hole of the probe substrate, an opening of the reinforcing substrate, and a contact hole of the probe alignment substrate.

Probe substrate assembly.

The method of claim 1,

An insulating thin film is formed on the surface of the probe substrate and the side surfaces of the plurality of contact holes.

Probe substrate assembly.

The method of claim 2,

The insulating thin film is formed of at least one of an insulating film made of a silicon oxide film, a silicon nitride film, and a polymer.

Probe substrate assembly.

The method of claim 1,

The reinforcing substrate has a plurality of opening arrays respectively corresponding to the plurality of contact hole arrays formed on the probe substrate.

Probe substrate assembly.

The method according to any one of claims 1 to 4,

The opening of the reinforcing substrate is formed through machining, having an oval or rectangular shape

Probe substrate assembly.

The method according to any one of claims 1 to 4,

The probe alignment substrate is the same substrate as the probe substrate

Probe substrate assembly.

The method according to any one of claims 1 to 4,

The probe substrate and the reinforcement substrate are bonded by any one of a direct bonding process, an anodic bonding process, and an intermediate layer bonding process.

Probe substrate assembly.

The method according to any one of claims 1 to 4,

The reinforcing substrate and the probe alignment substrate are bonded by any one of a direct bonding process, an anodic bonding process, or an interlayer insertion bonding process.

Probe substrate assembly.

The method according to any one of claims 1 to 4,

The lower end of the probe is bonded to each of the contact hole of the probe substrate and the contact hole of the probe alignment substrate by using a bonding material made of UV or thermal epoxy.

Probe substrate assembly.

Probe substrate assembly according to any one of claims 1 to 4

Probe card comprising a.