KR20080105224A - Positive photoresist composition having good coating uniformity - Google Patents

Positive photoresist composition having good coating uniformity Download PDF

Info

Publication number
KR20080105224A
KR20080105224A KR1020070052510A KR20070052510A KR20080105224A KR 20080105224 A KR20080105224 A KR 20080105224A KR 1020070052510 A KR1020070052510 A KR 1020070052510A KR 20070052510 A KR20070052510 A KR 20070052510A KR 20080105224 A KR20080105224 A KR 20080105224A
Authority
KR
South Korea
Prior art keywords
photoresist composition
weight
diazide
positive photoresist
solvent
Prior art date
Application number
KR1020070052510A
Other languages
Korean (ko)
Inventor
김종환
최형섭
Original Assignee
동우 화인켐 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동우 화인켐 주식회사 filed Critical 동우 화인켐 주식회사
Priority to KR1020070052510A priority Critical patent/KR20080105224A/en
Publication of KR20080105224A publication Critical patent/KR20080105224A/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)

Abstract

A positive photoresist composition is provided to improve coating property and resolution and to reduce the generation of offensive odor, thereby improving the work environment. A positive photoresist composition comprises 10-25 wt% of an alkali-soluble novolac resin; 1-10 wt% of a diazide-based compound as a photosensitive compound; and 65-85 wt% of a solvent containing 3-methoxybutyl acetate and methylmethoxy propionate in a ratio of 9:1 to 6:4 by weight.

Description

Positive photoresist composition having good coating uniformity

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to positive photoresist compositions used in the manufacture of microcircuits, such as liquid crystal display circuits and semiconductor integrated circuits.

In order to form a fine circuit pattern, such as a liquid crystal display device circuit or a semiconductor integrated circuit, first, a photoresist composition is uniformly coated or coated on an insulating film or a conductive metal film formed on a substrate and coated in the presence of a mask having a predetermined shape. The resist composition is exposed and developed to form a pattern of the desired shape. The metal film or the insulating film is etched using the patterned photoresist film as a mask, and then the remaining photoresist film is removed to form a fine circuit on the substrate. Such photoresist compositions are classified into a negative type and a positive type according to the change in solubility of the exposed part. Currently, a positive type photoresist composition capable of forming a fine pattern is mainly used.

In the liquid crystal display device manufacturing process, the resist coating method uses a spin coating method when the size of the substrate is small. In the case of the slit coating method, since the centrifugal force by the conventional rotary coating method does not work, it is required to use a solvent and a surfactant having excellent flatness for uniform coating properties.

Various solvents have been developed for improving the physical properties and working stability of the above-mentioned resist composition, and examples thereof include ethylene glycol monoethyl ether acetate and propylene glycol monoethyl ether acetate. However, ethylene glycol monoethyl ether acetate, propylene glycol monoethyl ether acetate, and the like are disadvantageous in that they are harmful to the human body or cause severe odor during the process.

Accordingly, there is a continuing need for various photoresist compositions suitable for each industrial process without sacrificing any of the desired properties of the resist composition, such as photosensitivity, development contrast, resolution, and solubility of the polymer resin.

It is an object of the present invention to provide a positive photoresist composition having excellent photosensitivity, residual film ratio, development contrast, resolution, and in particular, uniformity and unevenness of a coating film on a large substrate.

In order to achieve the above object, the present invention is an alkali-soluble novolak resin; Diazide compounds as photosensitive compounds; And it provides a positive photoresist composition comprising a solvent containing 3-methoxybutyl acetate and methyl methoxy propionate in a weight ratio of 9: 1 to 6: 4.

Hereinafter, the present invention will be described in detail.

Alkali-soluble novolak resins used in the photoresist composition of the present invention are polymer polymers synthesized by reacting formaldehyde with aromatic alcohols such as phenol, meta and / or paracresol, and those commonly used in this field may be used. have. In addition, in order to improve the performance of the photoresist, a resin having a molecular weight suitable for the purpose may be used by removing a polymer, a medium molecule, a low molecule, and the like from this resin.

In the present invention, the alkali-soluble novolak resin is preferably contained in 10 to 25% by weight based on the total amount of the composition. If the novolak resin is included in less than 10% by weight may cause problems in the pattern formation, and when included in excess of 25% by weight, the sensitivity is slow, scum may occur, the appropriate sensitivity is slowed down to the throughput Problems may arise.

Diazide compounds which can be used as photosensitive compounds in the photoresist composition of the present invention include 1,2-naphthoquinone diazide, 2-diazo-1-naphthol-5-sulphonic acid, 2-diazo-1-naphthol It can be prepared by reacting polyhydroxy benzophenone with at least one diazide compound selected from the group consisting of -4-sulphonic acid, naphthoquinone-1,2-diazide-5-sulfonyl chloride and the like.

In the present invention, the diazide compound as the photosensitive compound is preferably contained in 1 to 10% by weight based on the total amount of the composition. If the diazide compound is contained in less than 1% by weight, the pattern may not be formed, and the resist may be mostly dissolved. If the diazide compound is included in the amount of more than 10% by weight, scum and the like may exist between the patterns.

The solvent used in the photoresist composition of the present invention is

3-methoxybutyl acetate and methyl-3-methoxypropionate are mixed in a weight ratio of 9: 1 to 6: 4, and 55 to 85 based on the total amount of the composition It is preferably included in the weight percent.

When the content of the solvent in the total amount of the composition is less than 55% by weight, there is a problem in that the viscosity is excessively increased, the film thickness is excessively increased, and the sensitivity is lowered. There is a problem that the residual rate is bad.

In addition, when the mixed weight ratio of 3-methoxybutyl acetate and methyl-3-methoxypropionate is outside the range of 9: 1 to 6: 4, the coating performance of the resist may be poor. There may be, and there is a problem that a problem may occur in the storage stability.

In addition, in the photoresist composition of the present invention, 3-methoxybutyl acetate and methylmethoxypropionate are mixed in a weight ratio of 9: 1 to 6: 4, and the total amount of the solvent. When included in more than 70% by weight with respect to the excellent effect in the residual film ratio and film uniformity.

The solvent used in the photoresist composition of the present invention may further include 10 to 30% by weight of ethyl lactate (Ethyllactate) based on the total amount of the solvent.

The photoresist composition of the present invention can also improve performance according to the characteristics of individual processes by coating the substrate with additives such as colorants, dyes, anti-scratching agents, plasticizers, adhesion promoters, speed promoters, and surfactants.

 The photoresist composition of the present invention thus prepared may be applied to a substrate in a conventional manner, including dipping, spraying, rotating and spin coating, and slit coating. For example, in the case of spin coating, a coating having a desired thickness can be formed by appropriately changing the solid content of the photoresist solution according to the type and method of the spinning apparatus. The substrate includes silicon, aluminum, silicon dioxide, doped silicon dioxide, silicon nitride, tantalum, copper, polysilicon, ceramics, aluminum / copper mixtures, and various polymerizable resins.

The photoresist composition coated on the substrate is heated to a temperature of 20 ° C. to 100 ° C. by the method described above to perform a soft bake process. This treatment is carried out to evaporate the solvent without pyrolyzing the solid component in the photoresist composition. It is generally desirable to minimize the concentration of the solvent through a soft bake process, so this treatment is performed until most of the solvent has evaporated leaving a thin coating of photoresist composition on the substrate.

Next, the substrate on which the photoresist film is formed is exposed to light, in particular ultraviolet rays, using a proper mask or a template to form a pattern of a desired shape.

The substrate thus exposed is sufficiently immersed in an alkaline developing aqueous solution, and then left until all or almost all of the photoresist film in the portion exposed to light is dissolved. Suitable developing aqueous solutions include aqueous solutions containing alkali hydroxide, ammonium hydroxide or tetramethylammonium hydroxide (TMAH). The exposed part is removed and removed from the developer, and then heat treated again to perform a hard bake process to enhance adhesion and chemical resistance of the photoresist film. This heat treatment is preferably carried out at a temperature below the softening point of the photoresist film, preferably at a temperature of about 100 to 150 ° C.

The developed substrate is treated with a corrosive solution or a gas plasma to treat exposed substrate portions, wherein the unexposed portions of the substrate are protected by a photoresist film. After the substrate is treated in this manner, a photoresist film is removed with an appropriate stripper to form a fine circuit pattern on the substrate.

Hereinafter, the present invention will be described through Examples and Comparative Examples. The following examples are illustrated to specifically illustrate the present invention and do not limit the scope of the present invention.

Examples 1-6 and Comparative Examples 1,2: Preparation of Positive Photoresist Composition

The positive photoresist compositions of Examples 1 to 6 and Comparative Examples 1 and 2 were prepared by mixing the components shown in Table 1 below according to the indicated contents.

Test example.

The photoresist compositions of Examples 1 to 6 and Comparative Examples 1 and 2 were added dropwise onto a 4 inch bare glass, respectively, and rotated at a constant rotational speed. A film was formed.

After mounting a mask having a predetermined shape on the film film, it was irradiated with ultraviolet rays, and then immersed in a 2.38% by weight aqueous solution of tetramethylammonium hydroxide (TMAH) for 60 seconds to remove the portion exposed to ultraviolet rays to remove the photoresist pattern. Formed.

end. Speed

Effective sensitivity: The exposure amount when the cross section of a 5.0 micrometer line-and-space pattern is 1: 1.

After baking at 110 ° C, the measurement is performed after exposure and development.

I. Residual rate

After baking at 110 ° C., the film was developed in a 2.38% by weight aqueous solution for 60 seconds without exposure, and the film thicknesses before and after the development were compared.

Residual film ratio = (developmental film thickness / development film thickness)

97% or more: ◎, 94-97%: ○, 90-93%: △ 90% or less: X

All. Film thickness uniformity

After coating the photoresist on a glass substrate of 370 × 470mm size, after the baking process, the film thickness of the coated resist was measured about 30 points, and the film uniformity was evaluated by the following formula.

Film uniformity = (maximum value-minimum value) / (2 x average value)

Less than 1%: ◎, 1-2%: ○, 3-5%: △, 5% or more: X

division Suzy Photosensitizer Solvent Photosensitive speed (msec) Residual rate Membrane uniformity Example 1 20.6 (A / B = 60/40) 5.4 (C / D = 50/50) 74.0 (MBA / MMP = 90/10) 39.7 ○ ○ Example 2 20.6 (A / B = 60/40) 5.4 (C / D = 50/50) 74.0 (MBA / MMP = 80/20) 39.9 ◎ ◎ Example 3 20.6 (A / B = 60/40) 5.4 (C / D = 50/50) 74.0 (MBA / MMP = 70/30) 40.0 ◎ ◎ Example 4 20.6 (A / B = 60/40) 5.4 (C / D = 50/50) 74.0 (MBA / MMP = 60/40) 40.0 ◎ ◎ Example 5 20.6 (A / B = 60/40) 5.4 (C / D = 50/50) 74.0 (MBA / EL / MMP = 60/20/20) 39.5 ◎ ◎ Example 6 20.6 (A / B = 60/40) 5.4 (C / D = 50/50) 74.0 (MBA / EL / MMP = 70/20/10) 39.6 ○ ○ Comparative Example 1 20.6 (A / B = 60/40) 5.4 (C / D = 50/50) 74.0 (MBA / MMP = 100/0) 38.0 △ △ Comparative Example 2 20.6 (A / B = 60/40) 5.4 (C / D = 50/50) 74.0 (MBA / MMP = 50/50) 40.2 △ ○ Comparative Example 3 20.6 (A / B = 60/40) 5.4 (C / D = 50/50) 74.0 (MBA / MMP = 0/100) 42.0 ○ △

Unit: weight%

A: Cresol novolak resin obtained by condensation reaction of oxalic acid and formaldehyde to a mixture of 36 mol% of m-cresol and 64 mol% of p-cresol

B: Cresol novolak resin obtained by condensation reaction of oxalic acid and formaldehyde to a mixture of 57 mol% of m-cresol and 43 mol% of p-cresol

C: 1 mole of 2,3,4,4'-tetrahydroxybenzophenone and 2.3 moles of naphthoquinone-1,2-diazide-5-sulfonylchloride

D: 1 mole of 2,3,4,4'-tetrahydroxybenzophenone and 1.5 moles of naphthoquinone-1,2-diazide-5-sulfonylchloride

MBA: 3-methoxybutyl acetate

MMP: Methoxymethylpropionate

EL: ethyl lactate

As described above, since the positive photoresist composition of the present invention has excellent photosensitivity, residual film ratio, and film uniformity, it can be easily applied to actual industrial sites using large substrates, and also has a low amount of odor. The environment can be changed well.

Claims (6)

Alkali soluble novolak resins; Diazide compounds as photosensitive compounds; And a solvent comprising 3-methoxybutyl acetate and methylmethoxypropionate in a weight ratio of 9: 1 to 6: 4. The method according to claim 1, Alkaline soluble novolak resin 10 to 25% by weight based on the total amount of the composition; 1-10 weight% of diazide compounds as a photosensitive compound; And 65 to 85% by weight of a solvent comprising 3-methoxybutyl acetate and methylmethoxypropionate in a weight ratio of 9: 1 to 6: 4. The diazide compound according to claim 1, wherein the diazide compound is polyhydroxy benzophenone and 1,2-naphthoquinone diazide, 2-diazo-1-naphthol-5-sulphonic acid, 2-diazo-1-naphthol-4 A positive photoresist composition prepared by reacting one or more selected from the group consisting of sulfonic acid and naphthoquinone-1,2-diazide-5-sulfonylchloride. The positive photoresist composition of claim 1, wherein the solvent further comprises 10-30% by weight of ethyl lactate (Ethyllactate) based on the total amount of the solvent. The positive photoresist composition of claim 1, further comprising at least one additive selected from the group consisting of colorants, dyes, anti-scratches, plasticizers, adhesion promoters, speed promoters, and surfactants. The positive photoresist composition according to any one of claims 1 to 5, wherein the 3-methoxybutyl acetate and methylmethoxypropionate are contained in an amount of 70% by weight or more based on the total amount of the solvent.
KR1020070052510A 2007-05-30 2007-05-30 Positive photoresist composition having good coating uniformity KR20080105224A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070052510A KR20080105224A (en) 2007-05-30 2007-05-30 Positive photoresist composition having good coating uniformity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070052510A KR20080105224A (en) 2007-05-30 2007-05-30 Positive photoresist composition having good coating uniformity

Publications (1)

Publication Number Publication Date
KR20080105224A true KR20080105224A (en) 2008-12-04

Family

ID=40366544

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070052510A KR20080105224A (en) 2007-05-30 2007-05-30 Positive photoresist composition having good coating uniformity

Country Status (1)

Country Link
KR (1) KR20080105224A (en)

Similar Documents

Publication Publication Date Title
JP4594808B2 (en) PHOTORESIST COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE USING THE SAME OR SEMICONDUCTOR ELEMENT MANUFACTURING METHOD
JP5165273B2 (en) Photoresist composition
KR20070108713A (en) Photoresist composition
KR100846085B1 (en) Positive photoresist composition for liquid crystal device
JP5047595B2 (en) Photoresist composition
JP5165274B2 (en) Photoresist composition
JP4309033B2 (en) Method for producing positive photoresist film
KR101803098B1 (en) Positive photoresist composition
KR100363273B1 (en) Photoresist composition for liquid crystal display circuit board
KR100299688B1 (en) A composition for positive working photoresist
KR20080105224A (en) Positive photoresist composition having good coating uniformity
KR100299689B1 (en) A composition for positive working photoresist
KR20090024354A (en) Positive photoresist composition having good coating uniformity
KR20140137047A (en) Positive photoresist composition
KR20110040084A (en) Positive photoresist composition
KR101791265B1 (en) Positive photoresist composition and patterning method of photoresist using the same
JP2004280104A (en) Photoresist composition for circuit of liquid crystal display device
KR20120058191A (en) Positive photoresist composition having good coating uniformity
KR20120138578A (en) A photoresist composition
KR20120068460A (en) Positive photoresist composition
KR20100086251A (en) Photoresist composition
KR20120133627A (en) Positive photoresist composition with high sensitivity

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination