KR20080090823A - Semiconductor manufacturing apparatus having dual temperature controlling structure - Google Patents

Semiconductor manufacturing apparatus having dual temperature controlling structure Download PDF

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Publication number
KR20080090823A
KR20080090823A KR1020070034161A KR20070034161A KR20080090823A KR 20080090823 A KR20080090823 A KR 20080090823A KR 1020070034161 A KR1020070034161 A KR 1020070034161A KR 20070034161 A KR20070034161 A KR 20070034161A KR 20080090823 A KR20080090823 A KR 20080090823A
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KR
South Korea
Prior art keywords
heater
temperature
heating element
semiconductor manufacturing
center
Prior art date
Application number
KR1020070034161A
Other languages
Korean (ko)
Inventor
허성윤
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020070034161A priority Critical patent/KR20080090823A/en
Publication of KR20080090823A publication Critical patent/KR20080090823A/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)

Abstract

A semiconductor manufacturing device having a dual temperature control structure is provided to realize uniformity in film quality of a wafer by suitably controlling temperatures of the center and edge of a heater through first and second controllers respectively installed in the center and edge of the heater. A semiconductor manufacturing device having a dual temperature control structure includes a heater(140), a first heating element(150), a first power supply(151), a first temperature controller(152), a second heating element(160), a second power supply(161) and a second temperature controller(162). The heater is installed to heat a wafer. The first heating element is installed at the center part of the heater. The first power supply is electrically connected to the first heating element. The first temperature controller is installed in a sensor of the heater and controls the temperature in the center part of the heater. The second heating element is installed at an edge of the heater. The second temperature controller is installed at the edge of the heater to control the temperature in the edge of the heater.

Description

Semiconductor manufacturing apparatus having a dual temperature control structure {SEMICONDUCTOR MANUFACTURING APPARATUS HAVING DUAL TEMPERATURE CONTROLLING STRUCTURE}

1 is a longitudinal sectional view showing a conventional semiconductor manufacturing apparatus

2 is a longitudinal sectional view showing a semiconductor manufacturing apparatus having a dual temperature control structure according to the present invention;

* Drawing reference for the main part

100: semiconductor manufacturing apparatus of dual temperature control structure

110: chamber

120: shower head

130 electrode

140: heater

141: heater shaft

150: first heating element

151: first power supply

152: first temperature control unit

160: second heating element

161: first power supply unit

162: second temperature control unit

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a semiconductor manufacturing apparatus having a dual temperature control structure capable of controlling film temperature uniformity by controlling the temperature of the center portion and the edge portion of a heater.

In general, to manufacture semiconductor devices, various unit processes are required, and among them, chemical vapor deposition (hereinafter referred to as CVD) is mainly used to form various films on the wafer surface as a substrate. .

Typically, the CVD process is classified into a low pressure CVD process and an atmospheric pressure CVD process according to the pressure inside the chamber in which the reaction is carried out. In addition, the plasma enhanced CVD process and the light are classified into the CVD process. Excitation CVD processes and the like. Among them, the plasma-enhanced CVD process injects a reaction gas into a vacuum chamber, and applies a high frequency power source (RF power source) to form plasma to form highly reactive radicals and ions. The reaction allows the desired film to be deposited on the wafer.

In order to smoothly perform the thin film deposition process by the plasma enhanced CVD method, the wafer on which the thin film is deposited needs to be heated to a temperature suitable for process progress. To this end, a heater of a semiconductor manufacturing apparatus and a control unit for controlling the heater are required. .

1 is a longitudinal sectional view showing a conventional semiconductor manufacturing apparatus.

Referring to FIG. 1, in the semiconductor manufacturing apparatus 10 of the related art, a shower head 12 into which a reaction gas is injected is provided in an upper portion of a chamber 11, and an electrode 13 is disposed in the shower head 12. It is provided.

The heater 14 is provided inside the chamber 11. A heater 15 is provided inside the heater 14, and a power source 16 is connected to the heater 15.

The heater 14 supports the wafer W and raises the wafer W on which the thin film is deposited by the heating element 15 that generates heat to a temperature suitable for process progress.

The heater 14 is provided with the heater shaft 17 which supports the heater 14, and the control part 18 which controls the temperature of the said heater 14 is provided in the center part of the heater 14. As shown in FIG.

Typically, in the deposition process, one of the factors that most influences the thickness of the film of the wafer is temperature. Therefore, the wafer is maintained at a uniform and proper temperature in the deposition process. However, in the process, the flow rate of the reaction gas is relatively higher at the edge portion than at the center portion of the heater.

In the conventional semiconductor manufacturing apparatus 10, the control part 17 is provided only in the center part of the heater 14, and since the temperature of a heater is controlled using this sensor part, the center part of a heater can be controlled by appropriate temperature. However, there was a limit that the edge portion of the heater could not be precisely controlled at an appropriate temperature.

Accordingly, the present invention has been devised in view of the above problems, and an object of the present invention is to provide a dual temperature control capable of realizing uniformity of the film quality of the wafer by appropriately controlling the temperature of the center portion as well as the edge portion of the heater. It is to provide a semiconductor manufacturing apparatus of a structure.

In order to implement the above technical problem, a semiconductor manufacturing apparatus having a dual temperature control structure according to the present invention includes a chamber; A heater installed in the chamber to heat the wafer; A first heating element installed at the center of the heater; A first power supply unit electrically connected to the first heating element; A first temperature control unit installed in the sensor unit of the heater to control the temperature of the center unit of the heater; A second heating element installed at an edge of the heater; A second power supply unit electrically connected to the second heating element; And a second temperature controller installed at the edge portion of the heater to control the temperature of the edge portion of the heater.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 is a longitudinal sectional view showing a semiconductor manufacturing apparatus having a dual temperature control structure according to the present invention.

As shown in FIG. 2, the semiconductor manufacturing apparatus 100 having a dual temperature control structure according to the present invention includes a chamber 110 into which a reaction gas is introduced for a deposition process.

The upper portion of the chamber 110 is provided with a shower head 120 to which the reaction gas is injected, and the electrode 130 is provided in the shower head 120.

In the chamber 110, a heater 140 supporting the wafer W and heating the wafer W to a predetermined temperature is provided. A first heating element 150 is provided at the center of the heater 140, and a first power supply unit 151 is electrically connected to the first heating element 150. The heater 140 is provided with a heater shaft 141 supporting the heater 140.

Here, the center portion of the heater 140 refers to the center of the heater 140, the edge portion of the heater 140 refers to the outer peripheral portion of the heater.

The first temperature controller 152 is installed at the center of the heater 140 to control the temperature of the center of the heater 140.

A second heating element 160 is provided at an edge portion of the heater 140, and a second power source 161 is electrically connected to the second heating element 160.

The second temperature controller 162 is provided at the edge portion of the heater 140 to control the temperature of the edge portion of the heater 140.

In the semiconductor manufacturing apparatus of the dual temperature control structure according to the present invention configured as described above, when the high frequency power is supplied through the power supply unit 111, power is applied to the electrode 130.

At this time, an electric field for plasma formation is formed between the shower head 130 and the heater 140.

The heater 140 increases in temperature by the heat generation of the first and second heating elements 150 and 160, and raises the wafer W on which the thin film is deposited to a temperature suitable for the process progress.

 The highly reactive radicals and ions that have been plasmaated by the plasma deposition process are deposited on the desired wafer W through a chemical reaction.

In the process, the flow rate of the reaction gas is relatively greater at the edge portion than at the center portion of the heater 140. In this case, since the first temperature control unit 170 is provided at the center of the heater 140, and the second temperature control unit 180 is provided at the edge of the heater 140, the center of the heater 140 is provided. The negative temperature and the temperature of the edge of the heater 140 may be controlled respectively.

That is, the first heating element 150 generates heat appropriately by the first temperature control unit 152 to adjust the center temperature of the heater 140, and at the same time, the second heating element 160 is controlled by the second temperature control unit 162. ) Heats properly to adjust the center temperature of the heater 140.

Therefore, uniformity of the film quality of the wafer W can be realized by controlling the temperature of the center portion as well as the edge portion of the heater 140 at an appropriate temperature.

As described above, in the detailed description of the present invention has been described with respect to preferred embodiments of the present invention, those skilled in the art to which the present invention pertains various modifications can be made without departing from the scope of the present invention Of course. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined not only by the claims below, but also by the equivalents of the claims.

As described above, in the semiconductor manufacturing apparatus according to the present invention, since the first temperature control unit and the second temperature control unit are provided at the center portion of the heater and the edge portion of the heater, respectively, the center portion of the heater as well as the edge portion of the heater are provided. By controlling the temperature appropriately, uniformity of film quality of the wafer can be realized.

Claims (1)

chamber; A heater installed in the chamber to heat the wafer; A first heating element installed at the center of the heater; A first power supply unit electrically connected to the first heating element; A first temperature control unit installed in the sensor unit of the heater to control the temperature of the center unit of the heater;  A second heating element installed at an edge of the heater; A second power supply unit electrically connected to the second heating element; And And a second temperature controller provided at the edge portion of the heater to control the temperature of the edge portion of the heater.
KR1020070034161A 2007-04-06 2007-04-06 Semiconductor manufacturing apparatus having dual temperature controlling structure KR20080090823A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070034161A KR20080090823A (en) 2007-04-06 2007-04-06 Semiconductor manufacturing apparatus having dual temperature controlling structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070034161A KR20080090823A (en) 2007-04-06 2007-04-06 Semiconductor manufacturing apparatus having dual temperature controlling structure

Publications (1)

Publication Number Publication Date
KR20080090823A true KR20080090823A (en) 2008-10-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070034161A KR20080090823A (en) 2007-04-06 2007-04-06 Semiconductor manufacturing apparatus having dual temperature controlling structure

Country Status (1)

Country Link
KR (1) KR20080090823A (en)

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