KR20070018749A - 반도체장치 - Google Patents
반도체장치 Download PDFInfo
- Publication number
- KR20070018749A KR20070018749A KR1020060130124A KR20060130124A KR20070018749A KR 20070018749 A KR20070018749 A KR 20070018749A KR 1020060130124 A KR1020060130124 A KR 1020060130124A KR 20060130124 A KR20060130124 A KR 20060130124A KR 20070018749 A KR20070018749 A KR 20070018749A
- Authority
- KR
- South Korea
- Prior art keywords
- film
- pixel
- insulating film
- wiring
- semiconductor device
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims description 103
- 239000003990 capacitor Substances 0.000 claims abstract description 77
- 239000010409 thin film Substances 0.000 claims description 8
- 230000010365 information processing Effects 0.000 claims 1
- 238000003860 storage Methods 0.000 abstract description 44
- 239000004973 liquid crystal related substance Substances 0.000 abstract description 31
- 239000010408 film Substances 0.000 description 308
- 239000010410 layer Substances 0.000 description 43
- 239000000758 substrate Substances 0.000 description 41
- 238000000034 method Methods 0.000 description 25
- 230000015572 biosynthetic process Effects 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 17
- 239000012535 impurity Substances 0.000 description 15
- 239000011159 matrix material Substances 0.000 description 13
- 230000003287 optical effect Effects 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 238000002425 crystallisation Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000008025 crystallization Effects 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 239000011810 insulating material Substances 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910021342 tungsten silicide Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910001080 W alloy Inorganic materials 0.000 description 1
- 229910008812 WSi Inorganic materials 0.000 description 1
- 229910008938 W—Si Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- -1 acryl Chemical group 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 210000004027 cell Anatomy 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000001782 photodegradation Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Si 층: 최소 크기 = 0.8 ㎛, 최소 간격 = 1.5 ㎛ 게이트 전극: 최소 크기 = 1.0 ㎛, 최소 간격 = 1.5 ㎛ 주사선: 최소 크기 = 1.5 ㎛, 최소 간격 = 1.5 ㎛ 신호선과 Si 층의 콘택트 홀: 최소 크기 = 1.0 ㎛평방 콘택트 홀과 Si 층의 마진 = 1.0 ㎛ 콘택트 홀과 주사선(게이트 전극)과의 최소 간격 = 1.3 ㎛ 신호선: 최소 크기 = 1.5 ㎛, 최소 간격 = 1.5 ㎛ 콘택트 홀과 신호선의 마진 = 1.3 ㎛ 화소 크기: 19.2 ㎛평방 화소 TFT: L = 1.5 ㎛, W = 0.8 ㎛, 단일 게이트 주사선: 배선 폭의 최소 크기 = 1.0 ㎛ 주사선: Si 층과 겹치는 부분에서의 배선 폭의 최소 크기 = 1.5 ㎛ 용량 배선: 최소 크기 = 2.0 ㎛ |
Si 층: 최소 크기 = 0.8 ㎛, 최소 간격 = 1.5 ㎛ 게이트 전극: 최소 크기 = 1.0 ㎛, 최소 간격 = 1.5 ㎛ 주사선 및 게이트 전극의 콘택트 홀: 최소 크기 = 1.0 ㎛ 콘택트 홀과 게이트 전극의 마진 = 1.0 ㎛ 주사선: 최소 크기 = 1.5 ㎛, 최소 간격 = 1.5 ㎛ 신호선 및 Si 층의 콘택트 홀: 최소 크기 = 1.0 ㎛평방 콘택트 홀과 Si 층의 마진 = 1.0 ㎛ 콘택트 홀과 주사선(게이트 전극)의 최소 간격 = 1.3 ㎛ 신호선: 최소 크기 = 1.5 ㎛, 최소 간격 = 1.5 ㎛ 콘택트 홀 및 신호선의 마진 = 1.3 ㎛ 화소 크기: 19.2 ㎛평방 화소 TFT: L = 1.5 ㎛, W = 0.8 ㎛, 단일 게이트 주사선: 배선 폭의 최소 크기 = 1.0 ㎛ 주사선: Si 층과 겹치는 부분에서의 배선 폭의 최소 크기 = 1.5 ㎛ 용량 배선: 최소 크기 = 2.0 ㎛ |
Claims (7)
- 소정의 간격으로 서로 평행하게 배치되고 신호선 구동회로에 접속되는 다수의 신호선;소정의 간격으로 서로 평행하게 배치되고 주사선 구동회로에 접속되는 다수의 주사선;상기 신호선에 평행하게 배치된 용량 배선을 포함하는 것을 특징으로 하는 반도체장치.
- 제 1 항에 있어서, 상기 주사선이 상기 신호선과 교차하여 있는 것을 특징으로 하는 반도체장치.
- 제 1 항에 있어서, 상기 반도체장치가, 상기 신호선과 교차하는 상기 주사선에 접속된 게이트 전극을 가진 박막트랜지스터와, 그 박막트랜지스터에 접속된 화소 전극을 더 포함하는 것을 특징으로 하는 반도체장치.
- 제 1 항에 있어서, 상기 게이트 전극이 상기 주사선과는 다른 층에 형성되어 있는 것을 특징으로 하는 반도체장치.
- 제 1 항에 있어서, 상기 게이트 전극이 섬 형상으로 패터닝되어 있는 것을 특징으로 하는 반도체장치.
- 제 1 항에 있어서, 상기 반도체장치가, 비디오 카메라, 디지털 카메라, 프로젝터, 헤드 장착형 표시장치, 자동차 내비게이션 시스템, 퍼스널 컴퓨터, 및 정보 처리 단말기로 이루어진 군에서 선택된 어느 하나인 것을 특징으로 하는 반도체장치.
- 제 1 항에 있어서, 상기 반도체장치가 EL 표시장치인 것을 특징으로 하는 반도체장치.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060130124A KR100720069B1 (ko) | 1999-08-31 | 2006-12-19 | 반도체장치 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-1999-00246798 | 1999-08-31 | ||
KR1020060130124A KR100720069B1 (ko) | 1999-08-31 | 2006-12-19 | 반도체장치 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020000051005A Division KR100788870B1 (ko) | 1999-08-31 | 2000-08-31 | 반도체 장치 및 그의 제작방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070018749A true KR20070018749A (ko) | 2007-02-14 |
KR100720069B1 KR100720069B1 (ko) | 2007-05-18 |
Family
ID=41634309
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020060130124A KR100720069B1 (ko) | 1999-08-31 | 2006-12-19 | 반도체장치 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100720069B1 (ko) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3245527B2 (ja) * | 1995-12-13 | 2002-01-15 | シャープ株式会社 | 液晶表示装置 |
JPH10238640A (ja) * | 1997-02-28 | 1998-09-08 | Sanpo Shindo Kogyo Kk | パイプ型逆止弁 |
-
2006
- 2006-12-19 KR KR1020060130124A patent/KR100720069B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR100720069B1 (ko) | 2007-05-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100788870B1 (ko) | 반도체 장치 및 그의 제작방법 | |
JP4700156B2 (ja) | 半導体装置 | |
JP5084114B2 (ja) | プロジェクター | |
KR100720069B1 (ko) | 반도체장치 | |
JP3950906B2 (ja) | 半導体装置及びプロジェクター |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A107 | Divisional application of patent | ||
A201 | Request for examination | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130419 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20140421 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20150417 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20160408 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20170420 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20180417 Year of fee payment: 12 |
|
LAPS | Lapse due to unpaid annual fee |