KR20070005275A - 평판디스플레이 금속 전극용 식각액 조성물 - Google Patents
평판디스플레이 금속 전극용 식각액 조성물 Download PDFInfo
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- KR20070005275A KR20070005275A KR1020050060503A KR20050060503A KR20070005275A KR 20070005275 A KR20070005275 A KR 20070005275A KR 1020050060503 A KR1020050060503 A KR 1020050060503A KR 20050060503 A KR20050060503 A KR 20050060503A KR 20070005275 A KR20070005275 A KR 20070005275A
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- etching
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- 239000000203 mixture Substances 0.000 title claims abstract description 20
- 239000002184 metal Substances 0.000 title claims description 9
- 229910052751 metal Inorganic materials 0.000 title claims description 9
- 238000005530 etching Methods 0.000 claims abstract description 56
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 26
- 150000001875 compounds Chemical class 0.000 claims abstract description 22
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 16
- 229910001868 water Inorganic materials 0.000 claims abstract description 16
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910001959 inorganic nitrate Inorganic materials 0.000 claims abstract description 14
- 229910052816 inorganic phosphate Inorganic materials 0.000 claims abstract description 14
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 13
- 238000001039 wet etching Methods 0.000 claims abstract description 13
- 229910001182 Mo alloy Inorganic materials 0.000 claims abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 9
- 229910000838 Al alloy Inorganic materials 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 19
- 239000010409 thin film Substances 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 6
- 239000004973 liquid crystal related substance Substances 0.000 claims description 4
- 239000002356 single layer Substances 0.000 abstract description 7
- 229910002651 NO3 Inorganic materials 0.000 abstract 2
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 abstract 2
- 229910019142 PO4 Inorganic materials 0.000 abstract 2
- 101100283604 Caenorhabditis elegans pigk-1 gene Proteins 0.000 abstract 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 30
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 239000000243 solution Substances 0.000 description 12
- 239000010410 layer Substances 0.000 description 9
- 230000006378 damage Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 239000000872 buffer Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000009528 severe injury Effects 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- ing And Chemical Polishing (AREA)
- Liquid Crystal (AREA)
- Weting (AREA)
Abstract
Description
Claims (3)
- 박막트랜지스터 액정표시장치를 포함한 평판디스플레이의 TFT를 구성하는 게이트전극, 소스전극 및 드레인전극으로 사용되는 Mo, Al, Mo합금 또는 Al합금으로 이루어진 다층막 및 단일막을 습식 식각하는 식각액에 있어서,인산 50 ~ 77 중량%, 질산 2.5 ~ 7 중량%, 무기 인산염계 화합물 또는 무기 질산염계 화합물 1 ~ 10 중량%, 및 나머지는 물(H2O)로 구성된 평판디스플레이의 박막트랜지스터 형성을 위한 금속전극용 식각액 조성물.
- 제 1항에 있어서,무기 인산염계 화합물은 하기 화학식 1에서 선택되는 평판디스플레이의 박막트랜지스터 형성을 위한 금속전극용 식각액 조성물.[화학식 1]M1H2PO4, M1 2(HPO4), M1 3PO4, M2(H2PO4)2, M2HPO4 또는 M2 3(PO4)2(상기 식에서 M1은 NH4, Li, Na 또는 K이고, M2는 Ca 또는 Mg이다.)
- 제 2항에 있어서,무기 질산염계 화합물은 하기 화학식 2에서 선택되는 평판디스플레이의 박막트랜지스터 형성을 위한 금속전극용 식각액 조성물.[화학식 2]M1NO3 또는 M2(NO3)2(상기 식에서 M1은 NH4, Li, Na 또는 K이고, M2는 Ca 또는 Mg이다.)
Priority Applications (1)
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KR1020050060503A KR100692122B1 (ko) | 2005-07-06 | 2005-07-06 | 평판디스플레이 금속 전극용 식각액 조성물 |
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KR1020050060503A KR100692122B1 (ko) | 2005-07-06 | 2005-07-06 | 평판디스플레이 금속 전극용 식각액 조성물 |
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KR20070005275A true KR20070005275A (ko) | 2007-01-10 |
KR100692122B1 KR100692122B1 (ko) | 2007-03-12 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150113665A (ko) | 2014-03-31 | 2015-10-08 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
KR20150114247A (ko) | 2014-04-01 | 2015-10-12 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
KR20150114249A (ko) | 2014-04-01 | 2015-10-12 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
KR20150114655A (ko) | 2014-04-02 | 2015-10-13 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
KR20150114652A (ko) | 2014-04-02 | 2015-10-13 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
KR20150114654A (ko) | 2014-04-02 | 2015-10-13 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
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JPS58210144A (ja) | 1982-06-01 | 1983-12-07 | Fuji Photo Film Co Ltd | 平版印刷版支持体用アルミニウム合金 |
DE4101564A1 (de) * | 1991-01-21 | 1992-07-23 | Riedel De Haen Ag | Aetzloesung fuer nasschemische prozesse der halbleiterherstellung |
JPH07207467A (ja) * | 1994-01-21 | 1995-08-08 | Olympus Optical Co Ltd | アルミニウム合金の表面処理方法 |
US5587103A (en) | 1996-01-17 | 1996-12-24 | Harris Corporation | Composition, and method for using same, for etching metallic alloys from a substrate |
US6284721B1 (en) * | 1997-01-21 | 2001-09-04 | Ki Won Lee | Cleaning and etching compositions |
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2005
- 2005-07-06 KR KR1020050060503A patent/KR100692122B1/ko active IP Right Grant
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20150113665A (ko) | 2014-03-31 | 2015-10-08 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
KR20150114247A (ko) | 2014-04-01 | 2015-10-12 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
KR20150114249A (ko) | 2014-04-01 | 2015-10-12 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
KR20150114655A (ko) | 2014-04-02 | 2015-10-13 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
KR20150114652A (ko) | 2014-04-02 | 2015-10-13 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
KR20150114654A (ko) | 2014-04-02 | 2015-10-13 | 동우 화인켐 주식회사 | 액정표시장치용 어레이 기판의 제조방법 |
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