KR20060083516A - Artificial marble having crack pattern and process for preparing the same - Google Patents
Artificial marble having crack pattern and process for preparing the same Download PDFInfo
- Publication number
- KR20060083516A KR20060083516A KR1020050004239A KR20050004239A KR20060083516A KR 20060083516 A KR20060083516 A KR 20060083516A KR 1020050004239 A KR1020050004239 A KR 1020050004239A KR 20050004239 A KR20050004239 A KR 20050004239A KR 20060083516 A KR20060083516 A KR 20060083516A
- Authority
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- South Korea
- Prior art keywords
- chip
- weight
- parts
- artificial marble
- mixture
- Prior art date
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- 239000002928 artificial marble Substances 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims description 68
- 239000006188 syrup Substances 0.000 claims description 24
- 235000020357 syrup Nutrition 0.000 claims description 24
- 239000004925 Acrylic resin Substances 0.000 claims description 20
- 229920000178 Acrylic resin Polymers 0.000 claims description 20
- 239000003431 cross linking reagent Substances 0.000 claims description 18
- 239000003505 polymerization initiator Substances 0.000 claims description 17
- 239000011256 inorganic filler Substances 0.000 claims description 14
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 14
- 239000002002 slurry Substances 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 13
- 239000002994 raw material Substances 0.000 claims description 13
- 238000002156 mixing Methods 0.000 claims description 10
- 239000004575 stone Substances 0.000 claims description 8
- 239000012188 paraffin wax Substances 0.000 claims description 5
- 238000000227 grinding Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 12
- 239000011521 glass Substances 0.000 abstract description 5
- 238000000465 moulding Methods 0.000 abstract description 4
- 238000009434 installation Methods 0.000 abstract description 3
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 6
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 6
- 239000000178 monomer Substances 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 5
- 239000007822 coupling agent Substances 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- STVZJERGLQHEKB-UHFFFAOYSA-N ethylene glycol dimethacrylate Substances CC(=C)C(=O)OCCOC(=O)C(C)=C STVZJERGLQHEKB-UHFFFAOYSA-N 0.000 description 3
- 239000010438 granite Substances 0.000 description 3
- 239000004579 marble Substances 0.000 description 3
- 235000019809 paraffin wax Nutrition 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 235000019271 petrolatum Nutrition 0.000 description 3
- -1 polybutylene Polymers 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000006116 polymerization reaction Methods 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229920006305 unsaturated polyester Polymers 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 2
- XFCMNSHQOZQILR-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOC(=O)C(C)=C XFCMNSHQOZQILR-UHFFFAOYSA-N 0.000 description 2
- DBCAQXHNJOFNGC-UHFFFAOYSA-N 4-bromo-1,1,1-trifluorobutane Chemical compound FC(F)(F)CCCBr DBCAQXHNJOFNGC-UHFFFAOYSA-N 0.000 description 2
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 235000021355 Stearic acid Nutrition 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- ZQMIGQNCOMNODD-UHFFFAOYSA-N diacetyl peroxide Chemical compound CC(=O)OOC(C)=O ZQMIGQNCOMNODD-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000000 metal hydroxide Inorganic materials 0.000 description 2
- 150000004692 metal hydroxides Chemical class 0.000 description 2
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000008117 stearic acid Substances 0.000 description 2
- IVORCBKUUYGUOL-UHFFFAOYSA-N 1-ethynyl-2,4-dimethoxybenzene Chemical compound COC1=CC=C(C#C)C(OC)=C1 IVORCBKUUYGUOL-UHFFFAOYSA-N 0.000 description 1
- AKUNSTOMHUXJOZ-UHFFFAOYSA-N 1-hydroperoxybutane Chemical compound CCCCOO AKUNSTOMHUXJOZ-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- HWSSEYVMGDIFMH-UHFFFAOYSA-N 2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOC(=O)C(C)=C HWSSEYVMGDIFMH-UHFFFAOYSA-N 0.000 description 1
- LTHJXDSHSVNJKG-UHFFFAOYSA-N 2-[2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOCCOC(=O)C(C)=C LTHJXDSHSVNJKG-UHFFFAOYSA-N 0.000 description 1
- WDQMWEYDKDCEHT-UHFFFAOYSA-N 2-ethylhexyl 2-methylprop-2-enoate Chemical compound CCCCC(CC)COC(=O)C(C)=C WDQMWEYDKDCEHT-UHFFFAOYSA-N 0.000 description 1
- SAPGBCWOQLHKKZ-UHFFFAOYSA-N 6-(2-methylprop-2-enoyloxy)hexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCCCCOC(=O)C(C)=C SAPGBCWOQLHKKZ-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- YIVJZNGAASQVEM-UHFFFAOYSA-N Lauroyl peroxide Chemical compound CCCCCCCCCCCC(=O)OOC(=O)CCCCCCCCCCC YIVJZNGAASQVEM-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- ULQMPOIOSDXIGC-UHFFFAOYSA-N [2,2-dimethyl-3-(2-methylprop-2-enoyloxy)propyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(C)(C)COC(=O)C(C)=C ULQMPOIOSDXIGC-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012615 aggregate Substances 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- AOJOEFVRHOZDFN-UHFFFAOYSA-N benzyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC1=CC=CC=C1 AOJOEFVRHOZDFN-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 1
- 239000000920 calcium hydroxide Substances 0.000 description 1
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 150000001869 cobalt compounds Chemical class 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- YQHLDYVWEZKEOX-UHFFFAOYSA-N cumene hydroperoxide Chemical compound OOC(C)(C)C1=CC=CC=C1 YQHLDYVWEZKEOX-UHFFFAOYSA-N 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- LSXWFXONGKSEMY-UHFFFAOYSA-N di-tert-butyl peroxide Chemical compound CC(C)(C)OOC(C)(C)C LSXWFXONGKSEMY-UHFFFAOYSA-N 0.000 description 1
- 239000012933 diacyl peroxide Substances 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 239000000347 magnesium hydroxide Substances 0.000 description 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000001451 organic peroxides Chemical class 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- ZQBAKBUEJOMQEX-UHFFFAOYSA-N phenyl salicylate Chemical class OC1=CC=CC=C1C(=O)OC1=CC=CC=C1 ZQBAKBUEJOMQEX-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920001748 polybutylene Polymers 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002516 radical scavenger Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 1
- 238000003856 thermoforming Methods 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000001993 wax Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/647—Aspects related to microwave heating combined with other heating techniques
- H05B6/6482—Aspects related to microwave heating combined with other heating techniques combined with radiant heating, e.g. infrared heating
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B26/00—Compositions of mortars, concrete or artificial stone, containing only organic binders, e.g. polymer or resin concrete
- C04B26/02—Macromolecular compounds
- C04B26/04—Macromolecular compounds obtained by reactions only involving carbon-to-carbon unsaturated bonds
- C04B26/06—Acrylates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/6408—Supports or covers specially adapted for use in microwave heating apparatus
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/54—Substitutes for natural stone, artistic materials or the like
- C04B2111/542—Artificial natural stone
- C04B2111/545—Artificial marble
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
본 발명은 크랙무늬를 갖는 인조대리석 및 이의 제조방법에 관한 것으로, 기본적으로 바탕색이 있고 거기에 칩이 박힌 패턴이 일반적인 종래의 인조대리석과는 달리, 바탕이 없이 칩만으로 패턴이 표현되며, 특히 칩과 칩간의 경계면에 의해 형성되는 새로운 크랙무늬 패턴이 자연스럽게 구현된 인조대리석을 제공한다.The present invention relates to an artificial marble having a crack pattern and a method for manufacturing the same. Unlike a conventional artificial marble having a background color and a chip embedded therein, a pattern is expressed only by a chip without a background, in particular, a chip. The new crack pattern formed by the interface between the chip and the chip provides an artificial marble embodied naturally.
본 발명은 아크릴계 인조대리석을 제조함에 있어서, 재료 측면에서는 유리 등의 다른 소재를 이용하지 않고, 성형방법에 있어서는 기존 프레스만을 사용함으로써 새로운 장치를 특별히 설치하지 않고도 인조대리석의 외형을 특징있게 표현할 수 있다.In the present invention, in the production of acrylic artificial marble, in terms of materials, other materials such as glass are not used, and in the molding method, only the existing press can be used to express the appearance of the artificial marble without special installation of a new device. .
크랙무늬, 인조대리석Cracked Pattern, Artificial Marble
Description
도 1은 본 발명에 따라 크랙무늬를 갖는 인조대리석의 사진이다.1 is a photograph of artificial marble having a crack pattern in accordance with the present invention.
본 발명은 크랙무늬를 갖는 인조대리석 및 이의 제조방법에 관한 것으로, 더욱 상세하게는 바탕없이 칩만으로 패턴이 표현되며, 특히 칩과 칩간의 경계면에 의해 형성되는 새로운 크랙무늬 패턴이 자연스럽게 구현된 인조대리석 및 이의 제조방법에 관한 것이다.The present invention relates to an artificial marble having a crack pattern and a method of manufacturing the same. More specifically, the pattern is represented only by a chip without a background, and in particular, the artificial marble in which a new crack pattern is naturally formed by the interface between the chip and the chip. And it relates to a manufacturing method thereof.
기존의 인조대리석은 베이스 레진에 따라 아크릴계와 UPE계(불포화폴리에스터계)의 두 가지로 구분된다. 이 두 가지 중 아크릴계 인조대리석은 자체의 투명성과 고급스런 질감 등의 장점으로 여러 용도로 사용되고 있다.Conventional artificial marble is divided into acrylic and UPE (unsaturated polyester) according to the base resin. Among these two, acrylic artificial marble is used for various purposes because of its transparency and luxurious texture.
아크릴계 인조대리석에 있어서 주요 관심이 되는 부분은 어떤 기능을 갖는 것 보다는 외관인데, 기존의 인조대리석은 안료를 이용하거나 작은 크기의 칩을 이용하여 패턴을 나타냄으로써 천연대리석의 외관을 발현하였다. 그러나 이러한 것들로는 천연대리석에 근접한 패턴을 나타내는데 한계가 있으며, 점차 큰 칩이 적용되 고 화려한 무늬를 갖는 인조대리석에 대한 욕구가 늘어나고 있다.The main concern of acrylic artificial marble is appearance rather than having any function. Existing artificial marble expresses the appearance of natural marble by using a pigment or a small chip size. However, these are limited in showing patterns close to natural marble, and there is an increasing demand for artificial marble with large chips and colorful patterns.
종래기술로는 석분과 아크릴계 또는 UPE계 수지에 의한 인조대리석의 제조에 있어서, 프레스를 이용하는 경우, 석분 85 내지 95 중량%와 레진 및 첨가제 5 내지 15 중량%를 잘 혼합시키고, 이것에 진동을 주어 다지면서 진공을 걸어 탈포시킨 후, 이것을 고온(약 50 내지 90℃) 및 고압(약 40 내지 100 ㎏f)하에 프레스 성형하여 인조대리석을 제조하는 기술이 있다.In the prior art, in the production of artificial marble made of stone powder and acrylic or UPE resin, when using a press, 85 to 95% by weight of stone powder and 5 to 15% by weight of resin and additives are mixed well, After degassing under vacuum while being compacted, there is a technique of pressing artificially under high temperature (about 50 to 90 ° C.) and high pressure (about 40 to 100 kgf) to produce artificial marble.
대한민국 특허공개 제1996-41110호에는 시멘트, 유리질원료, 골재, 충진재, 물을 혼합성형하여 소성함을 특징으로 하는 인조대리석의 제조방법이 개시되어 있다. 그러나, 이 특허에서는 유리 등 무기재료를 사용하였고, 특히 900 내지 1,300℃의 고온에서 소결하여야 하는 문제가 있었다.Korean Patent Laid-Open Publication No. 1996-41110 discloses a method of manufacturing artificial marble, characterized in that the cement, glass material, aggregate, filler, water mixed molding and calcining. However, in this patent, an inorganic material such as glass is used, and there is a problem in that it must be sintered especially at a high temperature of 900 to 1,300 ° C.
대한민국 특허공개 제2002-55823호에는 이형제, 겔코팅제 및 크랙도료를 도포한 후 인조대리석 혼합물을 충전시킨 다음 이를 탈형하고 열처리하여 제조되는 크랙문양을 갖는 인조대리석의 제조방법이 개시되어 있다. 그러나, 이 특허에서는 크랙문양을 단순히 크랙도료를 사용하여 표현하였기 때문에 크랙문양이 단순하고 자연스럽지 못하였으며, 제조과정도 복잡한 문제가 있었다.Korean Patent Laid-Open Publication No. 2002-55823 discloses a method of manufacturing artificial marble having a crack pattern, which is prepared by applying a release agent, a gel coating agent, and a crack paint, filling the artificial marble mixture, then demolding and heat-treating it. However, in this patent, because the crack pattern is simply expressed using crack paint, the crack pattern is not simple and natural, and the manufacturing process has a complicated problem.
따라서, 본 발명의 목적은 종래의 인조대리석과 다른 새로운 패턴을 갖는 인조대리석 및 이의 제조방법을 제공하는 것이다.Accordingly, it is an object of the present invention to provide an artificial marble having a new pattern different from the conventional artificial marble and a method of manufacturing the same.
본 발명의 다른 목적은 유리 등의 다른 소재를 이용하지 않고, 기존 프레스만을 사용함으로써 새로운 장치를 특별히 설치하지 않고도 외형을 특징있게 표현할 수 있는 인조대리석 및 이의 제조방법을 제공하는 것이다.Another object of the present invention is to provide an artificial marble and a method of manufacturing the same, which can express the appearance without using any other material, such as glass, and only by using an existing press without special installation of a new device.
본 발명은 상기한 목적을 달성하기 위하여,The present invention to achieve the above object,
아크릴계 인조대리석 원료 조성물을 혼합하고 경화시키는 단계; 경화물을 분쇄하여 칩을 제작하는 단계; 칩 혼합물을 성형틀에 넣고 프레스로 가압하여 평판을 제조하는 단계를 포함하는 크랙무늬를 갖는 인조대리석의 제조방법을 제공한다.Mixing and curing the acrylic artificial marble raw material composition; Grinding the cured product to produce a chip; It provides a method for producing artificial marble having a crack pattern comprising the step of putting the chip mixture in a mold to press the press to produce a flat plate.
상기 칩은 원료 조성물로서 아크릴 수지시럽, 가교제, 중합개시제를 포함하는 투명칩이거나, 원료 조성물로서 아크릴 수지시럽, 무기충진물, 가교제, 중합개시제를 포함하는 반투명칩이다. 반투명칩의 경우 무기충진물이 추가로 포함되어 강도 보완에 효과적이다.The chip is a transparent chip containing an acrylic resin syrup, a crosslinking agent, and a polymerization initiator as a raw material composition, or a semi-transparent chip containing acrylic resin syrup, an inorganic filler, a crosslinking agent, and a polymerization initiator as a raw material composition. In the case of the semi-transparent chip, inorganic fillers are additionally included, which is effective for supplementing strength.
상기 칩 혼합물은 투명칩 단독 또는 반투명칩 단독으로 이루어질 수 있으나,바람직하게는 투명칩과 반투명칩을 조합한다. 투명칩에 반투명칩이 조합될 경우 외관효과가 차별화될 뿐만 아니라 강도 향상에도 유리하다.The chip mixture may be made of a transparent chip alone or a semi-transparent chip alone, preferably a combination of a transparent chip and a translucent chip. When the translucent chip is combined with the transparent chip, not only the appearance effect is differentiated but also the strength is improved.
또한, 상기 칩 혼합물에 석분 혼합물을 추가로 혼합함으로써, 반짝거림, 색상, 투명도 등의 외관효과와 크기, 강도 등의 물성을 향상시킬 수 있다. 본 발명에서 사용되는 석분은 화강암, 석영, 현무암 등이다.In addition, by further mixing the stone powder mixture with the chip mixture, it is possible to improve the physical properties such as appearance, size, strength, such as glitter, color, transparency. Stone powder used in the present invention is granite, quartz, basalt and the like.
또한, 상기 칩 혼합물에 아크릴계 슬러리를 추가로 혼합함으로써, 강도를 향상시킬 수 있다.In addition, by further mixing the acrylic slurry in the chip mixture, the strength can be improved.
바람직하게는, 상기 칩 혼합물은 0.1 내지 20 ㎜의 범위 내에서 크기별로 2종 이상 분류되는 다수의 칩으로 이루어진다. 이와 같이, 작은 칩부터 보다 큰 칩 까지 칩의 크기를 다양하게 세분화하여 이들을 조합함으로써, 칩을 혼합할 때 칩간의 공극을 최소화할 수 있으며, 외관차별화에도 유리하다.Preferably, the chip mixture is composed of a plurality of chips classified by two or more types by size within the range of 0.1 to 20 mm. As such, by dividing the size of the chip into various chips from small chips to larger chips and combining them, it is possible to minimize the gap between chips when mixing the chips, which is advantageous in differentiating appearance.
또한, 본 발명은 아크릴계 인조대리석 원료 조성물을 혼합하고 경화시킨 후, 경화물을 분쇄하여 칩을 제작한 다음, 칩 혼합물을 성형틀에 넣고 프레스로 가압하여 평판 형태로 제조되며, 칩간의 경계면에 의해 형성되는 크랙무늬를 갖는 인조대리석을 제공한다.In addition, the present invention, after mixing and curing the acrylic artificial marble raw material composition, and pulverized the cured product to produce a chip, and then put the chip mixture into a mold to press the press is produced in the form of a flat plate, by the interface between the chips It provides an artificial marble having a crack pattern formed.
상기 칩은 원료 조성물로서 아크릴 수지시럽 100 중량부에 대하여 가교제 0.1 내지 10 중량부, 중합개시제 0.1 내지 10 중량부를 포함하는 투명칩이거나, 원료 조성물로서 아크릴 수지시럽 100 중량부에 대하여 무기충진물 10 내지 100 중량부, 가교제 0.1 내지 10 중량부, 중합개시제 0.1 내지 10 중량부를 포함하는 반투명칩이다.The chip is a transparent chip containing 0.1 to 10 parts by weight of a crosslinking agent and 0.1 to 10 parts by weight of a polymerization initiator as a raw material composition, or 10 to 100 inorganic fillers based on 100 parts by weight of an acrylic resin syrup as a raw material composition. It is a semi-transparent chip comprising a weight part, 0.1 to 10 parts by weight of a crosslinking agent, and 0.1 to 10 parts by weight of a polymerization initiator.
상기 칩은 아크릴 수지시럽 100 중량부에 대하여 경화촉진제 0.1 내지 5 중량부, 파라핀 왁스류 0.1 내지 5 중량부를 더욱 포함할 수 있다. 파라핀 왁스류를 첨가할 경우 반들거리는 광택효과를 부여할 수 있다.The chip may further include 0.1 to 5 parts by weight of a curing accelerator and 0.1 to 5 parts by weight of paraffin wax, based on 100 parts by weight of the acrylic resin syrup. If paraffin waxes are added, it can give a shiny gloss effect.
상기 칩 혼합물은 투명칩 또는 반투명칩 단독으로 이루어질 수 있으나, 바람직하게는 투명칩 20 내지 80 중량%와 반투명칩 20 내지 80 중량%로 이루어진다.The chip mixture may be made of a transparent chip or a translucent chip alone, but preferably 20 to 80% by weight of the transparent chip and 20 to 80% by weight of the translucent chip.
또한, 상기 칩 혼합물에 석분 혼합물 20 내지 80 중량%를 추가로 혼합하거나, 상기 칩 혼합물 100 중량부에 아크릴계 슬러리 3 내지 20 중량부를 추가로 혼합할 수 있다.In addition, 20 to 80% by weight of the powder mixture may be further mixed with the chip mixture, or 3 to 20 parts by weight of the acrylic slurry may be further mixed with 100 parts by weight of the chip mixture.
상기 아크릴계 슬러리는 아크릴 수지시럽 100 중량부에 대하여 무기충진물 10 내지 200 중량부, 가교제 0.1 내지 10 중량부, 중합개시제 0.1 내지 10 중량부를 포함한다.The acrylic slurry includes 10 to 200 parts by weight of inorganic filler, 0.1 to 10 parts by weight of crosslinking agent, and 0.1 to 10 parts by weight of polymerization initiator based on 100 parts by weight of acrylic resin syrup.
바람직하게는, 상기 칩 혼합물은 0.1 내지 20 ㎜의 범위 내에서 크기별로 2종 이상 분류되는 다수의 칩으로 이루어지며, 석분 혼합물 또한 그 크기를 다양하게 세분화하여 조합한다.Preferably, the chip mixture is composed of a plurality of chips that are classified into two or more types by size within the range of 0.1 to 20 mm, and the stone powder mixture is also combined by various subdividing the size.
이하, 본 발명에 따라 크랙무늬를 갖는 인조대리석의 제조과정을 구체적으로 설명한다.Hereinafter, the manufacturing process of the artificial marble having a crack pattern according to the present invention will be described in detail.
1. 투명칩의 제조1. Manufacturing of transparent chips
투명칩은 아크릴 수지시럽 100 중량부, 가교제 0.1 내지 10 중량부, 중합개시제 0.1 내지 10 중량부, 경화촉진제 0.1 내지 5 중량부, 파라핀 왁스류 0.1 내지 5 중량부를 혼합하고 경화시킨 후 분쇄기로 파쇄하여 얻어진다.The transparent chip is mixed with 100 parts by weight of an acrylic resin syrup, 0.1 to 10 parts by weight of a crosslinking agent, 0.1 to 10 parts by weight of a polymerization initiator, 0.1 to 5 parts by weight of a curing accelerator, and 0.1 to 5 parts by weight of a paraffin wax, and then crushed by a grinder. Obtained.
본 발명에서 아크릴 수지시럽의 중합가능한 단량체로는 비닐계 단량체가 사용되며, 바람직하게는 아크릴 단량체가 좋다. 구체적으로 상기 아크릴 수지시럽은 메틸메타크릴레이트, 에틸메타크릴레이트, 부틸메타크릴레이트, 2-에틸헥실메타크릴레이트, 벤질메타크릴레이트 및 글리시딜메타크릴레이트 중에서 선택되는 메타크릴레이트 단량체 단독 또는 2종 이상의 혼합물이며, 메타크릴레이트 단량체 및 그 일부가 중합된 중합체의 혼합물이 사용될 수도 있다. 이들 중에서 메틸메타크릴레이트가 특히 바람직하다. 시럽내의 중합체의 함량은 10 내지 50 중량%인 것이 바람직하다.In the present invention, as the polymerizable monomer of the acrylic resin syrup, a vinyl monomer is used, preferably an acrylic monomer. Specifically, the acrylic resin syrup is a methacrylate monomer selected from methyl methacrylate, ethyl methacrylate, butyl methacrylate, 2-ethylhexyl methacrylate, benzyl methacrylate and glycidyl methacrylate alone or Mixtures of two or more kinds, and polymers of polymers in which methacrylate monomers and a part thereof are polymerized may be used. Of these, methyl methacrylate is particularly preferred. The content of the polymer in the syrup is preferably 10 to 50% by weight.
본 발명에서 사용되는 가교제는 분자내 공중합 가능한 이중결합을 포함하여 상기 아크릴 수지시럽과 가교결합하는 다관능성 아크릴 단량체로서, 에틸렌 글리콜 디메타크릴레이트, 디에틸렌 글리콜 디메타크릴레이트, 트리에틸렌 글리콜 디메타크릴레이트, 테트라에틸렌 글리콜 디메타크릴레이트, 1,6-헥산 디올 디메타크릴레이트, 폴리부틸렌 글리콜 디메타크릴레이트 및 네오펜틸 글리콜 디메타크릴레이트 중에서 선택되는 단독 또는 2종 이상의 혼합물이며, 이들 중에서 에틸렌 글리콜 디메타크릴레이트가 특히 바람직하다.The crosslinking agent used in the present invention is a multifunctional acrylic monomer that crosslinks with the acrylic resin syrup including a double bond capable of intramolecular copolymerization, and includes ethylene glycol dimethacrylate, diethylene glycol dimethacrylate, and triethylene glycol dimethacrylate. Single or a mixture of two or more selected from methacrylate, tetraethylene glycol dimethacrylate, 1,6-hexane diol dimethacrylate, polybutylene glycol dimethacrylate and neopentyl glycol dimethacrylate, these Ethylene glycol dimethacrylate is especially preferable.
상기 가교제들을 사용하지 않거나 너무 적게 사용할 경우에는 표면의 요철이 발생하고 인조대리석의 상부와 하부에 기포가 발생하는 등 원료들간의 결합력이 떨어지게 되고, 내열성 및 내열 변색성이 나빠진다. 가교제를 너무 많이 사용할 때는 칩들의 상분리가 일어나게 되어서 인조대리석 패턴에 많은 문제점을 나타낸다. 따라서 가교제의 사용량은 아크릴 수지시럽 100 중량부에 대하여 0.1 내지 10 중량부가 바람직하다.If the crosslinking agent is not used or is used too little, unevenness of the surface is generated and bubbles are generated in the upper and lower portions of the artificial marble, and thus the bonding strength between the raw materials is reduced, and the heat resistance and heat discoloration resistance are deteriorated. When too much crosslinking agent is used, phase separation of the chips occurs, which causes a lot of problems in the artificial marble pattern. Therefore, the amount of the crosslinking agent is preferably 0.1 to 10 parts by weight based on 100 parts by weight of the acrylic resin syrup.
본 발명에서 사용되는 중합개시제는 경화제 역할을 하며, 유기 과산화물으로서 벤조일 퍼옥사이드, 디쿠밀 퍼옥사이드와 같은 디아실 퍼옥사이드, 부틸하이드로 퍼옥사이드, 쿠밀하이드로 퍼옥사이드와 같은 하이드로 퍼옥사이드, t-부틸 퍼옥시 말레인산, t-부틸하이드로 퍼옥사이드, 아세틸 퍼옥사이드, 라우로일 퍼옥사이드, 아조비스이소부티로니트릴, 아조비스디메틸발레로니트릴 중에서 선택되는 단독 또는 2종 이상의 혼합물을 사용한다. 아울러, 아민의 퍼옥사이드와 술폰산의 혼합물 또는 퍼옥사이드와 코발트 화합물의 혼합물을 사용하여 중합과 경화가 실온에서 수행되도록 할 수 있다. The polymerization initiator used in the present invention serves as a curing agent, and as organic peroxide, benzoyl peroxide, diacyl peroxide such as dicumyl peroxide, butylhydro peroxide, hydroperoxide such as cumylhydro peroxide, t-butyl peroxide A single or a mixture of two or more selected from oxy maleic acid, t-butylhydro peroxide, acetyl peroxide, lauroyl peroxide, azobisisobutyronitrile and azobisdimethylvaleronitrile is used. In addition, a mixture of peroxides and sulfonic acids of amines or mixtures of peroxides and cobalt compounds can be used to allow polymerization and curing to be carried out at room temperature.
상기 중합개시제의 양을 많이 사용할 경우 급격한 반응에 의해 많은 반응열이 발생할 수 있어서 반응을 제어하는데 어려움이 있을 수 있다. 중합개시제의 사용량이 너무 적을 경우에는 경화속도가 늦게 되고, 열변형 온도가 떨어지며 물성에 나쁜 영향을 줄 수 있다. 따라서 중합개시제의 함량은 아크릴 수지시럽 100 중량부에 대하여 0.1 내지 10 중량부인 것이 바람직하며, 중합촉진제와 함께 사용하는 것이 일반적이다.If a large amount of the polymerization initiator is used, a lot of heat of reaction may occur due to a rapid reaction, which may cause difficulty in controlling the reaction. If the amount of the polymerization initiator is too small, the curing speed is slow, the heat deformation temperature is lowered and may adversely affect the physical properties. Therefore, the content of the polymerization initiator is preferably 0.1 to 10 parts by weight with respect to 100 parts by weight of the acrylic resin syrup, and it is generally used together with the polymerization accelerator.
이외에도 상기 조성물은 통상적으로 알려진 인조대리석의 첨가성분으로 실리콘계 또는 비실리콘계 소포제; trimethoxysilane을 주성분으로 하는 실란계, 산계 또는 티타네이트계 커플링제; 유기 또는 무기 안료나 염료; Phenyl Salicylates계, Benzophenone계, Benzotriazole계, 니켈유도체계 또는 Radical Scavenger계 자외선 흡수제; 할로겐계, 인계 또는 무기금속계 난연제; 스테아린산계 또는 실리콘계 이형제; 카테콜계 또는 하이드로퀴논류계 중합억제제; 및 페놀계, 아민계, 퀴논계, 유황계 또는 인계 산화방지제 중에서 선택되는 1종 이상의 첨가제를 추가로 포함할 수 있다.In addition, the composition is conventionally known as an additive component of artificial marble, a silicone-based or non-silicone-based antifoaming agent; silane-based, acid-based or titanate-based coupling agents mainly composed of trimethoxysilane; Organic or inorganic pigments or dyes; Phenyl Salicylates type, Benzophenone type, Benzotriazole type, nickel induction type or Radical Scavenger type UV absorbers; Halogen-based, phosphorus- or inorganic metal-based flame retardants; Stearic acid type or silicone type release agent; Catechol-based or hydroquinone-based polymerization inhibitors; And one or more additives selected from phenolic, amine, quinone, sulfur or phosphorus antioxidants.
상기와 같이 만들어진 투명칩의 경우 상온에서는 경화된 것처럼 딱딱하나, 온도가 올라가면 소성이 생겨 열을 가하여 일정한 모양으로 소성하고 일정시간이 흐르면 그 모양으로 굳어진다. 칩의 크기는 0.1 내지 20 ㎜의 범위 내에서 다양하게 크기로 제작하며, 메쉬를 사용하여 크기별로 선별한다.In the case of the transparent chip made as described above, it is hard as it is cured at room temperature, but when the temperature rises, plasticity is generated, and it is baked in a constant shape by applying heat, and then solidified into the shape after a certain time passes. The size of the chip is produced in various sizes within the range of 0.1 to 20 mm, and selected by size using a mesh.
2. 반투명칩의 제조2. Manufacturing of Translucent Chip
반투명칩은 상기 투명칩과 동일하게 제작하되, 아크릴 수지시럽 100 중량부 에 대하여 무기충진물 10 내지 100 중량부까지 첨가하거나 안료를 첨가하여 만들 수 있다.The semi-transparent chip may be manufactured in the same manner as the transparent chip, but may be made by adding 10 to 100 parts by weight of an inorganic filler with respect to 100 parts by weight of acrylic resin syrup or by adding a pigment.
본 발명에서 사용되는 무기충진물은 수산화 알루미늄, 수산화 마그네슘, 수산화 칼슘 및 수산화 지르코늄 중에서 선택되는 수산화 금속성분 단독 또는 2종 이상의 혼합물이다. 수산화 금속성분 이외에 탄산칼슘도 사용가능하며, 가장 바람직한 무기충진물은 수산화 알루미늄이다. 상기 무기충진물은 수지와의 분산성, 제품의 기계적 강도 향상 및 침전방지 등을 위해 실란-기재 커플링제, 티타네이트-기재 커플링제 또는 스테아린산으로 처리된 표면을 갖는 것이 바람직하다.The inorganic filler used in the present invention is a metal hydroxide alone or a mixture of two or more selected from aluminum hydroxide, magnesium hydroxide, calcium hydroxide and zirconium hydroxide. In addition to the metal hydroxide component, calcium carbonate may also be used, and the most preferred inorganic filler is aluminum hydroxide. The inorganic filler preferably has a surface treated with a silane-based coupling agent, a titanate-based coupling agent or stearic acid for dispersibility with the resin, improvement of mechanical strength of the product, and prevention of precipitation.
상기 무기충진물의 바람직한 함량은 아크릴 수지시럽 100 중량부에 대하여 10 내지 100 중량부이다. 혼합되는 양이 너무 많을 경우 투명도가 많이 떨어지고 점도상승, 경화속도 지연 등 작업성 저하와 인조대리석이 중량화가 되고 열성형성이 떨어지는 등 인조대리석의 기계적 특성 저하를 초래하고, 너무 적을 경우에는 인조대리석의 난연성, 강도, 경도 등 여러가지 물성이 저하되고 색조가 소실된다.The preferred content of the inorganic filler is 10 to 100 parts by weight based on 100 parts by weight of the acrylic resin syrup. If the amount is too high, the transparency will drop a lot, and the workability such as viscosity increase, curing speed retardation, artificial marble will be heavier, and the thermoforming will be degraded. Various physical properties such as flame retardancy, strength and hardness are lowered, and color tone is lost.
또한, 상기 수산화 알루미늄의 입자크기가 너무 클 경우 인조대리석의 물리적 특성이 저하되고, 너무 작을 경우 인조대리석의 광 투과성능이 떨어지는 경향이 있으므로, 입자크기가 5 내지 200 마이크론인 수산화 알루미늄을 사용하는 것이 바람직하다.In addition, if the particle size of the aluminum hydroxide is too large, the physical properties of the artificial marble is lowered, and if the particle size is too small, the light transmission performance of the artificial marble is inferior, it is preferable to use aluminum hydroxide having a particle size of 5 to 200 microns. desirable.
3. 평판 제조3. Reputable Manufacturer
상기에서 제작한 투명칩 및/또는 반투명칩을 크기별로 조합한 칩 혼합물을 성형틀에 넣고 프레스를 이용하여 70 내지 100℃의 온도에서 50 내지 100 ㎏f의 압 력으로 30 내지 40분 동안 가열 및 가압하여 경화시켜 평판을 제조한다.Put the mixture of the above-mentioned transparent chip and / or semi-transparent chip by size into a molding mold and heated for 30 to 40 minutes at a pressure of 50 to 100 kgf at a temperature of 70 to 100 ℃ using a press and Press to harden to produce a flat plate.
상기 칩 혼합물을 투명칩과 반투명칩으로 조합할 경우, 투명칩 20 내지 80 중량%와 반투명칩 20 내지 80 중량%로 조성한다.When the chip mixture is combined into a transparent chip and a semi-transparent chip, 20 to 80% by weight of the transparent chip and 20 to 80% by weight of the translucent chip.
또한, 석분 혼합물을 첨가할 경우, 칩 혼합물에 석분 혼합물 20 내지 80 중량%를 첨가한다. 이때 석분 혼합물도 칩 혼합물처럼 그 크기를 다양하게 세분화하여 조합한다.In addition, when the powder mixture is added, 20 to 80% by weight of the powder mixture is added to the chip mixture. At this time, the stone powder mixture is combined with various subdivided sizes as the chip mixture.
또한, 아크릴계 슬러리를 첨가할 경우, 칩 혼합물 100 중량부에 아크릴계 슬러리 3 내지 20 중량부를 첨가한다. 상기 아크릴계 슬러리는 아크릴 수지시럽 100 중량부에 대하여 무기충진물 10 내지 200 중량부, 가교제 0.1 내지 10 중량부, 중합개시제 0.1 내지 10 중량부로 조성한다.In addition, when adding an acrylic slurry, 3-20 weight part of acrylic slurry is added to 100 weight part of chip mixtures. The acrylic slurry is composed of 10 to 200 parts by weight of inorganic filler, 0.1 to 10 parts by weight of crosslinking agent, and 0.1 to 10 parts by weight of polymerization initiator based on 100 parts by weight of acrylic resin syrup.
도 1은 본 발명에 따라 크랙무늬를 갖는 인조대리석의 사진으로, 칩과 칩간의 경계면에 의해 형성되는 새로운 크랙무늬 패턴이 자연스럽게 구현되었음을 확인할 수 있다.1 is a photograph of an artificial marble having a crack pattern according to the present invention, it can be seen that a new crack pattern is formed naturally by the interface between the chip and the chip.
[실시예 1]Example 1
1. 투명칩의 제조1. Manufacturing of transparent chips
40 중량%의 폴리메틸메타크릴레이트와 60 중량%의 메틸메타크릴레이트의 혼합물로 이루어진 메틸메타크릴레이트 시럽(이하 시럽) 100 중량부, 가교제 0.5 중량부, 중합개시제(경화제) 0.75 중량부, 파라핀 왁스 0.5 중량부, 촉진제 0.3 중량부를 섞은 슬러리를 제조하고, 이를 1000×700×13 ㎜의 틀에 넣고 80℃의 오븐에 넣어 경화시킨 후, 분쇄기로 분쇄하여 0.1 내지 10 ㎜의 범위안에서 다음과 같은 크기별로 칩 분쇄물을 만들었다.100 parts by weight of methyl methacrylate syrup (hereinafter syrup) consisting of a mixture of 40% by weight of polymethyl methacrylate and 60% by weight of methyl methacrylate, 0.5 part by weight of crosslinking agent, 0.75 part by weight of polymerization initiator (curing agent), paraffin A slurry was prepared by mixing 0.5 parts by weight of wax and 0.3 parts by weight of accelerator, which was placed in a mold of 1000 × 700 × 13 mm, cured in an oven at 80 ° C., and then crushed by a grinder to obtain a slurry in the range of 0.1 to 10 mm as follows. Chip grinding was made by size.
칩은 메쉬를 사용하여 4.75 내지 10 ㎜ 크기 파쇄물, 3.35 내지 4.75 ㎜ 크기 파쇄물, 2 내지 3.35 ㎜ 크기 파쇄물, 1.18 내지 2 ㎜ 크기 파쇄물, 0.6 내지 1.18 ㎜ 크기 파쇄물, 0.425 내지 0.6 ㎜ 크기 파쇄물, 0.1 내지 0.425 ㎜ 크기 파쇄물로 분류하였다.Chips can be made using a mesh of 4.75 to 10 mm sized shreds, 3.35 to 4.75 mm sized shreds, 2 to 3.35 mm sized shreds, 1.18 to 2 mm sized shreds, 0.6 to 1.18 mm sized shreds, 0.425 to 0.6 mm sized shreds Classified as 0.425 mm size shreds.
2. 반투명칩의 제조2. Manufacturing of Translucent Chip
상기 투명칩과 동일한 방법으로 반투명칩을 제작하였으며, 다만 슬러리 제조시에 무기충진물로서 수산화 알루미늄을 100 중량부 첨가하였다.A semi-transparent chip was prepared in the same manner as the transparent chip, but 100 parts by weight of aluminum hydroxide was added as an inorganic filler during slurry production.
3. 평판 제조3. Reputable Manufacturer
제조된 투명칩 분쇄물에 대하여 4.75 내지 10 ㎜ 크기 파쇄물 20 중량%, 3.35 내지 4.75 ㎜ 크기 파쇄물 20 중량%, 2 내지 3.35 ㎜ 크기 파쇄물 15 중량%, 1.18 내지 2 ㎜ 크기 파쇄물 15 중량%, 0.6 내지 1.18 ㎜ 크기 파쇄물 10 중량%, 0.425 내지 0.6 ㎜ 크기 파쇄물 10 중량%, 0.1 내지 0.425 ㎜ 크기 파쇄물 10 중량%로 이루어진 투명칩 혼합물을 400×400×20 ㎜의 철틀에 부은 후, 프레스로 50 ㎏f까지 가압한 후 프레스의 상하 플레이트에 80℃까지 온도를 올려 경화시킴으로써 인조대리석을 제조하였다.20 wt% of 4.75 to 10 mm sized crushed material, 20 wt% of 3.35 to 4.75 mm sized crushed material, 15 wt% of 2 to 3.35 mm sized crushed material, 15 wt% of 1.18 to 2 mm sized crushed material, 0.6 to A transparent chip mixture consisting of 10% by weight of 1.18 mm sized shreds, 10% by weight of 0.425 to 0.6 mm sized shreds, and 10% by weight of 0.1 to 0.425 mm sized shredders was poured into a 400 × 400 × 20 mm steel frame, and then 50 kgf with a press. After pressing to the upper and lower plates of the press and the temperature was raised to 80 ℃ artificial marble was prepared.
[실시예 2]Example 2
상기 실시예 1과 동일한 방법으로 제조하되, 투명칩 혼합물 50 중량%와 이 투명칩 혼합물과 동일한 크기별 조성비율을 갖는 반투명칩 혼합물 50 중량%를 혼합하여 인조대리석을 제조하였다. Prepared in the same manner as in Example 1, a synthetic marble was prepared by mixing 50% by weight of the transparent chip mixture and 50% by weight of the semi-transparent chip mixture having the same compositional ratio as the transparent chip mixture.
[실시예 3]Example 3
상기 실시예 1과 동일한 방법으로 제조하되, 투명칩 혼합물 40 중량%와 이 투명칩 혼합물과 동일한 크기별 조성비율을 갖는 반투명칩 혼합물 30 중량% 그리고 역시 동일한 크기별 조성비율을 갖는 화강암 석분 혼합물 30 중량%를 혼합하여 인조대리석을 제조하였다.Prepared in the same manner as in Example 1, 40 wt% of the transparent chip mixture and 30 wt% of the semi-transparent chip mixture having the same compositional size ratio as the transparent chip mixture and 30 wt% of the granite stone powder mixture having the same compositional ratio The artificial marble was prepared by mixing.
[실시예 4]Example 4
상기 실시예 1과 동일한 방법으로 제조하되, 투명칩에 대하여 4.75 내지 10 ㎜ 크기 파쇄물과 3.35 내지 4.75 ㎜ 크기 파쇄물을 1:1로 혼합한 투명칩 혼합물 20 중량%와 화강암 석분 혼합물 70 중량% 그리고 아크릴계 슬러리 10 중량%를 혼합하여 인조대리석을 제조하였다. 이때 아크릴계 슬러리는 28 중량%의 폴리메틸메타크릴레이트와 72 중량%의 메틸메타크릴레이트의 혼합물로 이루어진 메틸메타크릴레이트 시럽 100 중량부, 수산화 알루미늄 100 중량부, 가교제 3 중량부, 경화제 0.5 중량부, 무기물 커플링 에이전트 0.2 중량부로 조성하였다.Manufactured in the same manner as in Example 1, 20 wt% of the transparent chip mixture, 70 wt% of the granite powder mixture, and acryl-based mixture of 4.75 to 10 mm sized crushed material and 3.35 to 4.75 mm sized crushed material 1: 1 10 wt% of the slurry was mixed to prepare artificial marble. The acrylic slurry is 100 parts by weight of methyl methacrylate syrup consisting of a mixture of 28% by weight of polymethyl methacrylate and 72% by weight of methyl methacrylate, 100 parts by weight of aluminum hydroxide, 3 parts by weight of crosslinking agent, 0.5 parts by weight of curing agent. To 0.2 parts by weight of inorganic coupling agent.
본 발명은 아크릴계 인조대리석을 제조함에 있어서, 재료 측면에서는 유리 등의 다른 소재를 이용하지 않고, 성형방법에 있어서는 기존 프레스만을 사용함으로써 새로운 장치를 특별히 설치하지 않고도 인조대리석의 외형을 특징있게 표현할 수 있다.In the present invention, in the production of acrylic artificial marble, in terms of materials, other materials such as glass are not used, and in the molding method, only the existing press can be used to express the appearance of the artificial marble without special installation of a new device. .
기존의 인조대리석은 기본적으로 바탕색이 있고 거기에 칩이 박힌 패턴이 일반적이었으나, 본 발명에 따른 인조대리석은 바탕이 없이 칩만으로 패턴이 표현되 며, 특히 칩과 칩간의 경계면에 의해 형성되는 새로운 크랙무늬 패턴이 자연스럽게 구현된 것을 특징으로 한다.Conventional artificial marble basically has a ground color and a chip embedded pattern therein, but the artificial marble according to the present invention has a pattern represented only by a chip without a background, and a new crack formed by the interface between the chip and the chip. Characterized in that the pattern is naturally implemented.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100841396B1 (en) * | 2007-03-19 | 2008-06-25 | 주식회사 에스켐 | Artificial transparency marble chip and method for preparing the same |
| KR101338626B1 (en) * | 2010-08-27 | 2013-12-06 | (주)엘지하우시스 | Synthetic acrylic marble having granite pattern and method of preparing the same |
| EP2578552A4 (en) * | 2010-06-01 | 2017-11-15 | LG Hausys, Ltd. | Artificial marble and preparation method thereof |
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| JPH051464A (en) * | 1991-06-25 | 1993-01-08 | Fukuvi Chem Ind Co Ltd | Synthetic resin floor board and manufacture thereof |
| JP4036663B2 (en) | 2002-03-08 | 2008-01-23 | 株式会社タジマ | Method and apparatus for producing synthetic resin sheet or synthetic resin plate having chip pattern close to natural marble pattern |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100841396B1 (en) * | 2007-03-19 | 2008-06-25 | 주식회사 에스켐 | Artificial transparency marble chip and method for preparing the same |
| EP2578552A4 (en) * | 2010-06-01 | 2017-11-15 | LG Hausys, Ltd. | Artificial marble and preparation method thereof |
| KR101338626B1 (en) * | 2010-08-27 | 2013-12-06 | (주)엘지하우시스 | Synthetic acrylic marble having granite pattern and method of preparing the same |
| US9012532B2 (en) | 2010-08-27 | 2015-04-21 | Lg Hausys, Ltd. | Acrylic artificial marble having granite pattern and method of manufacturing the same |
| EP2609052A4 (en) * | 2010-08-27 | 2016-08-03 | Lg Hausys Ltd | Acrylic artificial marble having granite pattern and method of manufacturing the same |
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