KR20060006096A - 절연막의 개질 방법 - Google Patents
절연막의 개질 방법 Download PDFInfo
- Publication number
- KR20060006096A KR20060006096A KR1020057022905A KR20057022905A KR20060006096A KR 20060006096 A KR20060006096 A KR 20060006096A KR 1020057022905 A KR1020057022905 A KR 1020057022905A KR 20057022905 A KR20057022905 A KR 20057022905A KR 20060006096 A KR20060006096 A KR 20060006096A
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- Prior art keywords
- plasma
- insulating film
- gas
- film
- treatment
- Prior art date
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- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
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Abstract
Description
Claims (9)
- 전자 디바이스용 기재 표면상에 성막된 절연막을 개질하는 방법으로서, 상기 개질 방법은, 희가스를 포함하는 처리 가스에 근거하는 플라즈마를 해당 절연막에 조사하는 공정과, 해당 절연막에 열어닐을 실시하는 공정을 조합하는 것에 의해 형성되는 것을 특징으로 하는 기판 처리 방법.
- 제 1 항에 있어서,상기 열어닐에 이용되는 가스는 산소(O2), 오존(O3), 질소(N2), 암모니아(NH3) 중 어느 하나를 포함하는 것을 특징으로 하는 기판 처리 방법.
- 제 1 항에 있어서,플라즈마를 조사하는 공정과, 열어닐을 실시하는 공정의 조합에 있어서, 이들을 조합함으로써 각 공정에 필요한 처리 시간을 단축하여, 장시간의 플라즈마 조사 또는 장시간의 열어닐에 의한 절연막의 특성 열화를 억제하는 것을 특징으로 하는 기판 처리 방법.
- 제 1 항에 있어서,플라즈마를 조사하는 공정과, 열어닐을 실시하는 공정의 조합에 있어서, 플라즈마를 조사하는 공정은 희가스와 산소 원자를 포함하는 처리 가스로 이루어지고, 열어닐을 실시하는 공정은 질소 원자를 포함하는 처리 가스로 이루어지는 것을 특징으로 하는 기판 처리 방법.
- 제 1 항에 있어서,플라즈마를 조사하는 공정과, 열어닐을 실시하는 공정의 조합에 있어서, 플라즈마를 조사하는 공정은 희가스와 질소 원자를 포함하는 처리 가스로 이루어지고, 열어닐을 실시하는 공정은 산소 원자를 포함하는 처리 가스로 이루어지는 것을 특징으로 하는 기판 처리 방법.
- 제 1 항에 있어서,상기 절연막은 MOSFET(Metal-Oxide-Semiconductor Field Effect Transistor)의 게이트 절연막인 것을 특징으로 하는 기판 처리 방법.
- 제 1 항에 있어서,상기 절연막은 메모리 디바이스에서의 용량(Capacitor)의 전극간 절연막인 것을 특징으로 하는 기판 처리 방법.
- 제 1 항에 있어서,상기 플라즈마는 마이크로파에 의해서 형성되는 것을 특징으로 하는 기판 처리 방법.
- 제 1 항에 있어서,상기 플라즈마는 평면 안테나에 마이크로파를 조사하는 것에 의해 형성되는 것을 특징으로 하는 기판 처리 방법.
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JP2003154812A JP4408653B2 (ja) | 2003-05-30 | 2003-05-30 | 基板処理方法および半導体装置の製造方法 |
JPJP-P-2003-00154812 | 2003-05-30 | ||
PCT/JP2004/007841 WO2004107431A1 (ja) | 2003-05-30 | 2004-05-28 | 絶縁膜の改質方法 |
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KR100887330B1 KR100887330B1 (ko) | 2009-03-06 |
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KR1020057022905A KR100887330B1 (ko) | 2003-05-30 | 2004-05-28 | 절연막의 개질 방법 및 반도체 장치의 제조 방법 |
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US (2) | US7655574B2 (ko) |
JP (1) | JP4408653B2 (ko) |
KR (1) | KR100887330B1 (ko) |
CN (1) | CN1930668A (ko) |
TW (1) | TW200509256A (ko) |
WO (1) | WO2004107431A1 (ko) |
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US20100105215A1 (en) | 2010-04-29 |
US8021987B2 (en) | 2011-09-20 |
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