KR20050011090A - 코어부를 삽입한 인덕터 제조방법 - Google Patents
코어부를 삽입한 인덕터 제조방법 Download PDFInfo
- Publication number
- KR20050011090A KR20050011090A KR1020030049932A KR20030049932A KR20050011090A KR 20050011090 A KR20050011090 A KR 20050011090A KR 1020030049932 A KR1020030049932 A KR 1020030049932A KR 20030049932 A KR20030049932 A KR 20030049932A KR 20050011090 A KR20050011090 A KR 20050011090A
- Authority
- KR
- South Korea
- Prior art keywords
- inductor
- layer
- imd
- forming
- core portion
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims description 18
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 238000009826 distribution Methods 0.000 claims description 2
- 239000000696 magnetic material Substances 0.000 claims description 2
- 238000005498 polishing Methods 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/10—Inductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Coils Or Transformers For Communication (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (4)
- 기판 상에 메탈층을 소정의 두께로 증착하여 형성한 후, 포토 및 식각 공정을 이용하여 메탈층을 패터닝하여 하부 인덕터를 형성하는 단계와,상기 하부 인더터 상에 제 1의 IMD 층을 형성하는 단계와,CMP를 수행하여 상기 제 1의 IMD 층을 평탄화하는 단계와,자성층을 평탄화된 상기 제 1의 IMD 층 상에 형성하는 단계와,마스크를 써서 포토 및 식각 작업을 진행하여, 상기 자성층을 소정 형상으로 패터닝하는 단계와,상기 제 2의 IMD 층을 상기 자성층 상에 형성한 후, CMP 공정을 진행하여 상기 제 2의 IMD 층을 평탄화하는 단계와,비아(via)를 형성하기 위하여 포토 및 식각 공정을 수행하고, 비아 갭을 충진하기 위한 공정을 수행하는 단계와,상단부에 상부 인덕터를 형성하는 단계를포함하는 것을 특징으로 하는 코어부를 삽입한 인덕터 제조방법.
- 제 1항에 있어서, 상기 자성층은 인덕터의 코어부로 사용가능한 연자성 물질로 형성하는 것을 특징으로 하는 코어부를 삽입한 인덕터 제조방법.
- 제 1항에 있어서, 상기 소정 형상은 코일부인 상기 하부 인덕터에 의하여 형성되는 자기장을 효율적으로 저장하기 위하여 코일부인 상기 하부 인덕터의 분포 영역보다 조금 더 넓게 형성하는 것을 특징을 하는 코어부를 삽입한 인덕터 제조방법.
- 제 1항에 있어서, 상기 상부 인덕터는 상기 하부 인덕터와 같은 형태로 만들어지며 상기 코일부의 회전 방향은 서로 반대 방향으로 형성하는 것을 특징으로 하는 코어부를 삽입한 인덕터 제조방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030049932A KR100998962B1 (ko) | 2003-07-21 | 2003-07-21 | 코어부를 삽입한 인덕터 제조방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020030049932A KR100998962B1 (ko) | 2003-07-21 | 2003-07-21 | 코어부를 삽입한 인덕터 제조방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050011090A true KR20050011090A (ko) | 2005-01-29 |
KR100998962B1 KR100998962B1 (ko) | 2010-12-09 |
Family
ID=37223192
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020030049932A KR100998962B1 (ko) | 2003-07-21 | 2003-07-21 | 코어부를 삽입한 인덕터 제조방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR100998962B1 (ko) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100764555B1 (ko) * | 2005-11-23 | 2007-10-09 | 송만호 | 인덕터 및 인덕터의 가압 성형 방법 |
US9263180B2 (en) | 2013-08-19 | 2016-02-16 | Samsung Electro-Mechanics Co., Ltd. | Coil component and board having the same |
KR20160089160A (ko) | 2015-01-19 | 2016-07-27 | 삼성전기주식회사 | 칩 전자부품 및 칩 전자부품의 실장 기판 |
KR20160092674A (ko) | 2015-01-28 | 2016-08-05 | 삼성전기주식회사 | 칩 전자부품 및 칩 전자부품의 실장 기판 |
KR20160092673A (ko) | 2015-01-28 | 2016-08-05 | 삼성전기주식회사 | 칩 전자부품 및 칩 전자부품의 실장 기판 |
KR20160092708A (ko) | 2015-01-28 | 2016-08-05 | 삼성전기주식회사 | 칩 전자부품 및 칩 전자부품의 실장 기판 |
CN105990008A (zh) * | 2014-09-16 | 2016-10-05 | 三星电机株式会社 | 线圈部件和具有该线圈部件的板 |
US9490061B2 (en) | 2015-03-09 | 2016-11-08 | Samsung Electro-Mechanics Co., Ltd. | Coil component and board having the same |
KR20170079079A (ko) | 2015-12-30 | 2017-07-10 | 삼성전기주식회사 | 코일 전자부품 |
US9900987B2 (en) | 2015-07-01 | 2018-02-20 | Samsung Electro-Mechanics Co., Ltd. | Coil component and board for mounting the same |
US9984804B2 (en) | 2015-01-27 | 2018-05-29 | Samsung Electro-Mechanics Co., Ltd. | Coil component |
US10056183B2 (en) | 2014-09-16 | 2018-08-21 | Samsung Electro-Mechanics Co., Ltd. | Coil component and board having the same |
US10068697B2 (en) | 2014-09-16 | 2018-09-04 | Samsung Electro-Mechanics Co., Ltd. | Coil component and board having the same |
US10116280B2 (en) | 2015-07-20 | 2018-10-30 | Samsung Electro-Mechanics Co., Ltd. | Coil component |
KR20190101102A (ko) | 2018-02-22 | 2019-08-30 | 삼성전기주식회사 | 인덕터 |
KR20200107151A (ko) | 2019-03-06 | 2020-09-16 | 삼성전기주식회사 | 코일 부품 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10283249B2 (en) | 2016-09-30 | 2019-05-07 | International Business Machines Corporation | Method for fabricating a magnetic material stack |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05109557A (ja) * | 1991-10-14 | 1993-04-30 | Nippon Telegr & Teleph Corp <Ntt> | 高周波用薄膜トランスおよび高周波用薄膜インダクタ |
DE4325868C2 (de) * | 1993-08-02 | 1997-11-13 | Junker Gmbh O | Vorrichtung zum induktiven Längsfelderwärmen von flachem Metallgut |
JPH10289821A (ja) * | 1997-04-15 | 1998-10-27 | Matsushita Electric Ind Co Ltd | 高周波帯域用磁気デバイス |
KR100392254B1 (ko) * | 2000-12-05 | 2003-07-23 | 한국전자통신연구원 | 박막 인덕터 제작방법 |
-
2003
- 2003-07-21 KR KR1020030049932A patent/KR100998962B1/ko active IP Right Grant
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100764555B1 (ko) * | 2005-11-23 | 2007-10-09 | 송만호 | 인덕터 및 인덕터의 가압 성형 방법 |
US9263180B2 (en) | 2013-08-19 | 2016-02-16 | Samsung Electro-Mechanics Co., Ltd. | Coil component and board having the same |
US10068697B2 (en) | 2014-09-16 | 2018-09-04 | Samsung Electro-Mechanics Co., Ltd. | Coil component and board having the same |
US10056183B2 (en) | 2014-09-16 | 2018-08-21 | Samsung Electro-Mechanics Co., Ltd. | Coil component and board having the same |
CN105990008A (zh) * | 2014-09-16 | 2016-10-05 | 三星电机株式会社 | 线圈部件和具有该线圈部件的板 |
US9576711B2 (en) | 2014-09-16 | 2017-02-21 | Samsung Electro-Mechanics Co., Ltd. | Coil component and board having the same |
KR20160089160A (ko) | 2015-01-19 | 2016-07-27 | 삼성전기주식회사 | 칩 전자부품 및 칩 전자부품의 실장 기판 |
US10256032B2 (en) | 2015-01-19 | 2019-04-09 | Samsung Electro-Mechanics Co., Ltd. | Electronic component |
US9984804B2 (en) | 2015-01-27 | 2018-05-29 | Samsung Electro-Mechanics Co., Ltd. | Coil component |
US9812247B2 (en) | 2015-01-28 | 2017-11-07 | Samsung Electro-Mechanics Co., Ltd. | Electronic component |
US10607769B2 (en) | 2015-01-28 | 2020-03-31 | Samsung Electro-Mechanics Co., Ltd. | Electronic component including a spacer part |
KR20160092674A (ko) | 2015-01-28 | 2016-08-05 | 삼성전기주식회사 | 칩 전자부품 및 칩 전자부품의 실장 기판 |
KR20160092673A (ko) | 2015-01-28 | 2016-08-05 | 삼성전기주식회사 | 칩 전자부품 및 칩 전자부품의 실장 기판 |
KR20160092708A (ko) | 2015-01-28 | 2016-08-05 | 삼성전기주식회사 | 칩 전자부품 및 칩 전자부품의 실장 기판 |
US9490061B2 (en) | 2015-03-09 | 2016-11-08 | Samsung Electro-Mechanics Co., Ltd. | Coil component and board having the same |
US9900987B2 (en) | 2015-07-01 | 2018-02-20 | Samsung Electro-Mechanics Co., Ltd. | Coil component and board for mounting the same |
US10116280B2 (en) | 2015-07-20 | 2018-10-30 | Samsung Electro-Mechanics Co., Ltd. | Coil component |
US10123420B2 (en) | 2015-12-30 | 2018-11-06 | Samsung Electro-Mechanics Co., Ltd. | Coil electronic component |
KR20170079079A (ko) | 2015-12-30 | 2017-07-10 | 삼성전기주식회사 | 코일 전자부품 |
KR20190101102A (ko) | 2018-02-22 | 2019-08-30 | 삼성전기주식회사 | 인덕터 |
US10957477B2 (en) | 2018-02-22 | 2021-03-23 | Samsung Electro-Mechanics Co., Ltd. | Inductor |
KR20200107151A (ko) | 2019-03-06 | 2020-09-16 | 삼성전기주식회사 | 코일 부품 |
US11664148B2 (en) | 2019-03-06 | 2023-05-30 | Samsung Electro-Mechanics Co., Ltd. | Coil component |
Also Published As
Publication number | Publication date |
---|---|
KR100998962B1 (ko) | 2010-12-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100998962B1 (ko) | 코어부를 삽입한 인덕터 제조방법 | |
US8205324B2 (en) | Method of fabricating an inductor structure | |
KR100869741B1 (ko) | 나선형 인덕터 | |
US6988307B2 (en) | Method of making an integrated inductor | |
US6815220B2 (en) | Magnetic layer processing | |
US6730983B2 (en) | Semiconductor device with spiral inductor and method for fabricating semiconductor integrated circuit device | |
US20070216509A1 (en) | Metal-insulator-metal transformer and method for manufacturing the same | |
US11479845B2 (en) | Laminated magnetic inductor stack with high frequency peak quality factor | |
US11222742B2 (en) | Magnetic inductor with shape anisotrophy | |
JP5599935B2 (ja) | 集積磁気薄膜増強回路素子を有する磁気抵抗ランダムアクセスメモリ(mram) | |
US9640479B2 (en) | Method for fabricating semiconductor structure | |
US8722443B2 (en) | Inductor structures for integrated circuit devices | |
US9613897B2 (en) | Integrated circuits including magnetic core inductors and methods for fabricating the same | |
CN101047059B (zh) | 金属-绝缘物-金属的变压器及其制造方法 | |
US20100164672A1 (en) | Semiconductor device and method for manufacturing the same | |
US9460996B1 (en) | Integrated device with inductive and capacitive portions and fabrication methods | |
KR20050065171A (ko) | 코어부를 삽입한 인덕터를 제조 방법 | |
US11984411B2 (en) | Semiconductor structure and manufacturing method thereof | |
KR20050097555A (ko) | 코어부를 삽입한 인덕터 제조 방법 | |
KR20020051406A (ko) | 인덕터 소자의 제조 방법 | |
TW478160B (en) | Chip structure with embedded inductance device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
N231 | Notification of change of applicant | ||
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20131118 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20141119 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20151118 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20161118 Year of fee payment: 7 |
|
FPAY | Annual fee payment |
Payment date: 20171117 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20181120 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20191119 Year of fee payment: 10 |