KR20040013600A - 횡전계모드 액정표시소자 - Google Patents
횡전계모드 액정표시소자 Download PDFInfo
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- KR20040013600A KR20040013600A KR1020020046598A KR20020046598A KR20040013600A KR 20040013600 A KR20040013600 A KR 20040013600A KR 1020020046598 A KR1020020046598 A KR 1020020046598A KR 20020046598 A KR20020046598 A KR 20020046598A KR 20040013600 A KR20040013600 A KR 20040013600A
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- electrode
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- liquid crystal
- pixel
- crystal display
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 110
- 238000003860 storage Methods 0.000 claims abstract description 89
- 239000003990 capacitor Substances 0.000 claims abstract description 77
- 230000005684 electric field Effects 0.000 claims abstract description 39
- 239000010410 layer Substances 0.000 claims description 35
- 239000000758 substrate Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 239000004065 semiconductor Substances 0.000 claims description 11
- 239000011241 protective layer Substances 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 description 11
- 101150076592 CST3 gene Proteins 0.000 description 6
- 101150037603 cst-1 gene Proteins 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 206010047571 Visual impairment Diseases 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
Abstract
Description
Claims (15)
- 실질적으로 서로 수직으로 배열되어 복수의 화소를 정의하는 복수의 게이트라인 및 데이터라인;각 화소내에 배치된 구동소자;상기 화소내에 상기 데이터라인과 실질적으로 평행하게 배열되어 화소내에 횡전계를 발생시키는 제1전극 및 제2전극; 및적어도 일부가 상기 데이터라인과 인접한 제1전극 위에 배열되어 상기 제1전극과 축적용량을 생성하는 제3전극으로 구성된 횡전계모드 액정표시소자.
- 제1항에 있어서, 상기 제1전극은 공통전극이고 제2전극은 화소전극인 것을 특징으로 하는 횡전계모드 액정표시소자.
- 제1항에 있어서, 상기 제3전극의 폭은 제1전극의 폭 보다 작은 것을 특징으로 하는 횡전계모드 액정표시소자.
- 제1항에 있어서,상기 제1전극이 접속되는 제1라인; 및상기 제2전극이 접속되는 제2라인을 추가로 포함하는 것을 특징으로 하는 횡전계모드 액정표시소자.
- 제4항에 있어서, 상기 제1라인은 공통라인이고 제2라인은 화소전극라인인 것을 특징으로 하는 횡전계모드 액정표시소자.
- 제4항에 있어서, 상기 제2라인의 적어도 일부가 제1라인 위에 배열되어 축적용량을 형성하는 것을 특징으로 하는 횡전계모드 액정표시소자.
- 제4항에 있어서, 상기 제2라인의 적어도 일부가 인접 화소의 게이트라인 위에 배열되는 것을 특징으로 하는 횡전계모드 액정표시소자.
- 제1항에 있어서, 상기 데이터라인과 제2전극 사이에 배열되어 데이터라인에 의한 전계왜곡을 차단하는 제4전극을 추가로 포함하는 것을 특징으로 하는 횡전계모드 액정표시소자.
- 제8항에 있어서, 상기 제4전극은 데이터라인과 인접한 제1전극 위에 형성되는 것을 특징으로 하는 횡전계모드 액정표시소자.
- 제8항에 있어서, 상기 제1전극과 제4전극을 전기적으로 접속시키는 컨택홀을 추가로 포함하는 것을 특징으로 하는 횡전계모드 액정표시소자.
- 제1항에 있어서, 상기 박막트랜지스터는,기판위에 형성된 게이트전극;상기 게이트전극이 형성된 기판 전체에 걸쳐 적층된 절연층;상기 절연층 위에 형성된 반도체층;상기 반도체층 위에 형성된 소스전극 및 드레인전극; 및상기 소스전극 및 드레인전극이 형성된 기판 전체에 걸쳐 적층된 보호층으로 이루어진 것을 특징으로 하는 횡전계모드 액정표시소자.
- 데이터라인과 게이트라인에 의해 정의되며, 내부에 복수의 제1전극과 제2전극이 실질적으로 평행하게 배열되어 횡전계를 형성하고 입력되는 신호에 따라 구동소자가 작동하여 액정을 구동시키는 복수의 화소; 및상기 화소의 최외각에 배열된 제1전극과 적어도 오버랩되도록 배열되어 상기 제1전극과 제1축적용량을 형성하는 제3전극으로 구성된 횡전계모드 액정표시소자.
- 제12항에 있어서,상기 화소내에 형성되며 제1전극과 접속된 제1라인; 및적어도 일부가 상기 제1라인과 오버랩되도록 배열되며 제2전극과 접속된 제2라인을 추가로 포함하는 것을 특징으로 하는 횡전계모드 액정표시소자.
- 제13항에 있어서, 상기 제2라인의 적어도 일부가 게이트라인과 오버랩되는것을 특징으로 하는 횡전계모드 액정표시소자.
- 제12항에 있어서, 상기 제3전극 근처에 형성되어 횡전계의 왜곡을 방지하는 제4전극을 추가로 포함하는 것을 특징으로 하는 횡전계모드 액정표시소자.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020020046598A KR100899625B1 (ko) | 2002-08-07 | 2002-08-07 | 횡전계모드 액정표시소자 |
Applications Claiming Priority (1)
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KR1020020046598A KR100899625B1 (ko) | 2002-08-07 | 2002-08-07 | 횡전계모드 액정표시소자 |
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KR20040013600A true KR20040013600A (ko) | 2004-02-14 |
KR100899625B1 KR100899625B1 (ko) | 2009-05-27 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7663723B2 (en) | 2005-03-14 | 2010-02-16 | Lg Display Co., Ltd. | In-plane switching mode liquid crystal display device and fabrication method thereof |
KR101189144B1 (ko) * | 2005-03-03 | 2012-10-10 | 엘지디스플레이 주식회사 | 횡전계 방식 액정표시장치용 어레이기판과 그 제조방법 |
KR101273630B1 (ko) * | 2006-05-03 | 2013-06-11 | 엘지디스플레이 주식회사 | 횡전계 방식 액정표시장치 및 그 제조방법 |
KR101298604B1 (ko) * | 2006-06-30 | 2013-08-26 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3486859B2 (ja) * | 1996-06-14 | 2004-01-13 | 大林精工株式会社 | 液晶表示装置 |
KR100322969B1 (ko) * | 1999-12-22 | 2002-02-01 | 주식회사 현대 디스플레이 테크놀로지 | 인-플레인 스위칭 모드 액정표시장치 및 그의 제조방법 |
-
2002
- 2002-08-07 KR KR1020020046598A patent/KR100899625B1/ko active IP Right Grant
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101189144B1 (ko) * | 2005-03-03 | 2012-10-10 | 엘지디스플레이 주식회사 | 횡전계 방식 액정표시장치용 어레이기판과 그 제조방법 |
US7663723B2 (en) | 2005-03-14 | 2010-02-16 | Lg Display Co., Ltd. | In-plane switching mode liquid crystal display device and fabrication method thereof |
KR100966452B1 (ko) * | 2005-03-14 | 2010-06-28 | 엘지디스플레이 주식회사 | 수평전계방식 액정표시소자 및 그 제조방법 |
KR101273630B1 (ko) * | 2006-05-03 | 2013-06-11 | 엘지디스플레이 주식회사 | 횡전계 방식 액정표시장치 및 그 제조방법 |
KR101298604B1 (ko) * | 2006-06-30 | 2013-08-26 | 엘지디스플레이 주식회사 | 액정표시장치 및 그 제조방법 |
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Publication number | Publication date |
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KR100899625B1 (ko) | 2009-05-27 |
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