KR20030081901A - Sample manufacturing apparatus by using stop etch - Google Patents

Sample manufacturing apparatus by using stop etch Download PDF

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KR20030081901A
KR20030081901A KR1020020020349A KR20020020349A KR20030081901A KR 20030081901 A KR20030081901 A KR 20030081901A KR 1020020020349 A KR1020020020349 A KR 1020020020349A KR 20020020349 A KR20020020349 A KR 20020020349A KR 20030081901 A KR20030081901 A KR 20030081901A
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sample
etching
metal
image contrast
manufacturing apparatus
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KR1020020020349A
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Korean (ko)
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KR100501483B1 (en
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오창재
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아남반도체 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)

Abstract

PURPOSE: A sample manufacturing apparatus using a stop etch is provided to be capable of accurately calculating an etching time and quickly manufacturing the sample by using the difference of metal image contrast according to a metal phase oxide layer of a wet etch sample. CONSTITUTION: A sample manufacturing apparatus using a stop etch is provided with a transfer part(20) for moving a sample(S1) up and down between an etching solution(S2) and a sensing line(S3), and a sensor and controller(10). At this time, the sensor and the controller are used for controlling the transfer part up and down until the metal image contrast of the sample approaches a setting metal image contrast stored in the sensor and the controller by comparing the metal image contrast of the sample with the setting metal image contrast.

Description

스톱 식각을 이용한 샘플 제작장치{SAMPLE MANUFACTURING APPARATUS BY USING STOP ETCH}Sample manufacturing device using stop etching {SAMPLE MANUFACTURING APPARATUS BY USING STOP ETCH}

본 발명은 스톱 식각을 이용한 샘플 제작장치에 관한 것으로, 메탈 이미지 컨트라스트(metal image contrast)(예로, 메탈 고유 파장 값) 차이를 이용하여 신속하면서 정확한 샘플을 제작할 수 있도록 하는 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sample fabrication apparatus using stop etching, and more particularly, to an apparatus for rapidly and accurately producing a sample using a difference of metal image contrast (for example, a metal intrinsic wavelength value).

통상적으로, 반도체 불량분석용 샘플 제작에 있어서, 반도체 절연막(oxide) 제거를 위한 습식 식각(wet etch) 시, 불량 분석 엔지니어(engineer)가 반도체 칩의 표면 색을 이용하여 식각의 정도를 파악하여 불량 분석을 파악하는 것이다.Typically, in sample fabrication for semiconductor defect analysis, during wet etching for removing semiconductor oxides, a defect analysis engineer determines a degree of etching by using a surface color of a semiconductor chip. To grasp the analysis.

즉, 엔지니어가 직접 육안으로 식별하는 방식인 것으로, 엔지니어의 개인 능력과 적절한 식각 용액 선정에 따라 샘플 상태가 좌우되는 바, 습식 식각 이전에 메탈(metal) 상에 절연막(oxide)이 있는 상태로 샘플 색을 통해 메탈 상의 절연막 두께를 판단할 수 있으며, 불량 분석 엔지니어는 메탈 고유의 색이 보일 때까지 식각 용액에 샘플을 적시는 것을 반복하여 신속하고 정확하게 불량 분석을 해야한다.In other words, this is a method of visually identifying the engineer directly. The sample state depends on the individual's ability of the engineer and the selection of an appropriate etching solution. The sample with an oxide on the metal before the wet etching is sampled. Color can be used to determine the thickness of an insulating film on a metal, and the defect analysis engineer must perform a quick and accurate failure analysis by repeatedly soaking the sample in the etching solution until the metal's own color is seen.

그러나, 엔지니어의 개인 능력이 떨어지거나, 또는 부적절한 식각 타임을 적용하게 될 경우, 비정상적인 불량 분석 결과를 갖게 되는 문제점이 있었다.However, when the engineer's personal ability is degraded or an inappropriate etching time is applied, there is a problem of having an abnormal defect analysis result.

따라서, 본 발명은 상술한 문제점을 해결하기 위하여 안출된 것으로, 그 목적은 습식(wet) 식각(etch) 샘플의 메탈 상 절연막(oxide) 유무에 따른 메탈 이미지 컨트라스트(metal image contrast)(메탈 고유 파장 값) 차이를 이용하여 정확한 식각 타임을 계산과, 원하는 샘플을 신속하면서 정확하게 제작할 수 있도록 하는 스톱 식각을 이용한 샘플 제작장치를 제공함에 있다.Accordingly, the present invention has been made to solve the above-described problems, and its object is to provide metal image contrast (metal intrinsic wavelength) depending on the presence or absence of oxides of a wet etching sample. The present invention provides a sample fabrication apparatus using stop etching to calculate an accurate etching time using a value) and to quickly and accurately produce a desired sample.

이러한 목적을 달성하기 위한 본 발명에서 스톱 식각을 이용한 샘플 제작장치는 샘플을 식각 용액과 감지 라인간을 상하로 이동시켜 주는 이동 장비; 샘플의 메탈 고유 파장 값을 기 세팅(setting)하고 있는 상태에서, 이동 장비에 의해 식각 용액에 담겨있는 샘플이 감지 라인으로 이동되면, 식각 용액이 묻힌 샘플의 고유 파장 값을 감지하여 기 세팅된 값에 도달될 때까지 이동 장비를 제어하는 센서 및 제어부를 포함하는 것을 특징으로 한다.Sample production apparatus using the stop etching in the present invention for achieving this object is a mobile device for moving the sample up and down between the etching solution and the sensing line; In the state where the metal intrinsic wavelength value of the sample is already set, when the sample contained in the etching solution is moved to the sensing line by the moving device, the intrinsic wavelength value of the sample in which the etching solution is buried is detected. It characterized in that it comprises a sensor and a control unit for controlling the mobile equipment until it reaches.

도 1은 본 발명에 따른 스톱 식각(stop etch)을 이용한 샘플 제작장치에 대한 도면이다.1 is a view of a sample manufacturing apparatus using a stop etch in accordance with the present invention.

<도면의 주요부분에 대한 부호의 설명><Description of Symbols for Main Parts of Drawings>

10 : 센서 및 제어부 20 : 이동 장비10: sensor and control unit 20: mobile equipment

S1 : 식각(etch)중의 샘플 S2 : 식각 용액S1: Sample in Etch S2: Etch Solution

S3 : 감지 라인S3: sense line

이하, 첨부된 도면을 참조하여 본 발명의 구성 및 동작에 대하여 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail the configuration and operation of the present invention.

도 1은 본 발명에 따른 스톱 식각(stop etch)을 이용한 샘플 제작장치에 대한 도면으로서, 센서 및 제어부(10) 및 이동 장비(20)를 포함한다.1 is a diagram of a sample fabrication apparatus using a stop etch according to the present invention, and includes a sensor, a controller 10, and a mobile device 20.

센서 및 제어부(10)는 샘플(S1)의 메탈 이미지 컨트라스트(metal image contrast)(고유 파장 값)를 기 세팅(setting)한 상태에서, 이동 장비(20)에 의해 식각 용액(S2)에 담겨있는 샘플(S1)이 감지 라인(S3)으로 이동되면, 식각 용액(S2)이 묻힌 샘플(S1)의 고유 파장 값을 감지한 후, 내부적으로, 기 세팅된 고유 파장 값과 감지된 고유 파장 값을 비교하여 그 값이 동일하지 않을 경우, 이동 장비(20)를 제어하여 샘플(S1)에 식각 용액(S2)을 더 묻혀 식각 정도를 정확하게 수행하도록 제어한다. 또한, 센서 및 제어부(10)는 기 세팅된 고유 파장 값과 감지된 고유 파장 값을 비교하여 그 값이 같을 경우, 식각을 정확하게 수행한 것으로 판단하여 샘플 제작 작업을 종료한다. 여기서, 기 세팅된 메탈 고유 파장 값은 샘플의 정확한 식각을 위해 사전에 저장한 값이다.The sensor and the control unit 10 are contained in the etching solution S2 by the moving device 20 while pre-setting metal image contrast (a unique wavelength value) of the sample S1. When the sample S1 is moved to the sensing line S3, after detecting the inherent wavelength value of the sample S1 in which the etching solution S2 is embedded, internally, the preset inherent wavelength value and the detected intrinsic wavelength value are detected. In comparison, when the value is not the same, the mobile equipment 20 is controlled to bury the etching solution S2 in the sample S1 to perform the etching degree accurately. In addition, the sensor and the controller 10 compares the preset intrinsic wavelength value and the detected intrinsic wavelength value, and when the values are the same, it is determined that the etching is performed correctly and ends the sample fabrication operation. Here, the preset metal intrinsic wavelength value is a value stored in advance for accurate etching of the sample.

이동 장비(20)는 센서 및 제어부(10)의 제어에 따라 동작되는 것으로, 식각 용액(S2)에 담겨져 있는 샘플(S1)을 감지 라인(S3)으로 이동시켜 세서 및 제어부(10)가 감지하도록 하며, 또한 센서 및 제어부(10)의 제어에 따라 감지 라인(S3) 상에 위치한 샘플(S1)을 식각 용액(S2)에 담길 수 있도록 이동시킨다.The mobile device 20 is operated under the control of the sensor and the controller 10, and moves the sample S1 contained in the etching solution S2 to the sensing line S3 to be detected by the cleaner and the controller 10. The sample S1 located on the sensing line S3 is moved to be contained in the etching solution S2 under the control of the sensor and the controller 10.

상술한 구성을 바탕으로, 본 발명에 따른 스톱 식각(stop etch)을 이용한 샘플 제작장치의 동작에 대하여 보다 상세하게 설명한다.Based on the above-described configuration, the operation of the sample fabrication apparatus using the stop etch according to the present invention will be described in more detail.

먼저, 도 1을 참조하면, 센서 및 제어부(10)는 내부적으로 샘플(S1)의 메탈 이미지 컨트라스트(metal image contrast)(고유 파장 값)를 기 세팅(setting)한다고 가정한다.First, referring to FIG. 1, it is assumed that the sensor and the controller 10 internally set a metal image contrast (a unique wavelength value) of the sample S1.

이러한 상태에서, 이동 장비(20)가 동작되면서 식각 용액(S2)에 담겨있는 샘플(S1)을 감지 라인(S3)으로 이동시킨다.In this state, the mobile device 20 is operated to move the sample S1 contained in the etching solution S2 to the sensing line S3.

그러면, 센서 및 제어부(10)는 감지 라인(S3)으로 이동된 식각 용액(S2)이 묻힌 샘플(S1)의 고유 파장 값을 감지한 후, 기 세팅된 고유 파장 값과 감지된 고유 파장 값이 동일한지 판단한다.Then, the sensor and the controller 10 detect the intrinsic wavelength value of the sample S1 on which the etching solution S2 moved to the sensing line S3 is buried, and then the preset intrinsic wavelength value and the detected intrinsic wavelength value are set. Determine if it is the same.

상기 판단 단계에서 비교 값이 동일하지 않을 경우, 이동 장비(20)를 제어하면, 이동 장비(20)는 센서 및 제어부(10)의 제어에 따라 식각 용액(S2)이 더 묻힐 수 있도록 샘플(S1)을 이동시킨다.If the comparison value is not the same in the determination step, if the mobile equipment 20 is controlled, the mobile equipment 20 is a sample (S1) to further buried the etching solution (S2) under the control of the sensor and the controller 10. Move).

이후, 이동 장비(20)가 동작하면서 식각 용액(S2)에 담겨있는 샘플(S1)을 감지 라인(S3)으로 다시 이동시킬 경우, 센서 및 제어부(10)는 감지 라인(S3)으로 이동된 식각 용액(S2)이 묻힌 샘플(S1)의 고유 파장 값을 다시 감지한 후, 기 세팅된 고유 파장 값과 감지된 고유 파장 값이 동일한지 판단하여 그 값이 동일하지 않을 경우, 이동 장비(20)를 계속적으로 제어한다.Subsequently, when the mobile device 20 moves and the sample S1 contained in the etching solution S2 is moved back to the sensing line S3, the sensor and the controller 10 move to the sensing line S3. After detecting the natural wavelength value of the sample S1 on which the solution S2 is buried again, it is determined whether the preset natural wavelength value and the detected natural wavelength value are the same, and the value is not the same. Control continuously.

상기 판단 단계에서 비교 값이 동일할 경우, 식각을 정확하게 수행한 것으로 판단하여 샘플 제작 작업을 종료한다.If the comparison value is the same in the determination step, it is determined that the etching is performed correctly, the sample production operation is finished.

한편, 메탈 이미지 컨트라스트(metal image contrast)를 이용한 스톱 식각(stop etch)에는 플라즈마 인핸스드 화학기상증착(Plasma Enhanced ChemicalVapor Deposition : PE-CVD) 티이오에스(tetraethoxy-silane : TEOS) 습식 식각과, 상압화학기상증착(Atmospheric Pressure Chemical Vapor Deposition : APCVD) 절연막(oxide) 습식 식각과, 서멀 절연막(thermal oxide) 식각과, 인산(H3PO4)의 질화막 식각과, 상기 메탈 막질 중 알루미늄(Al)/구리(Cu)의 식각과, 상기 메탈 막질 중 티타늄(Ti)/질화 티타늄(TiN)의 식각으로 구분된다.On the other hand, the stop etch using metal image contrast includes plasma enhanced chemical vapor deposition (PE-CVD), tetraethoxy-silane (TEOS) wet etching, and atmospheric pressure chemistry. Atmospheric Pressure Chemical Vapor Deposition (APCVD) wet etching of oxide, thermal oxide etching, nitride etching of phosphoric acid (H 3 PO 4 ), aluminum / copper in the metal film (Cu) and the etching of titanium (Ti) / titanium nitride (TiN) of the metal film.

상기와 같이 설명한 본 발명은 습식(wet) 식각(etch) 샘플의 메탈 상 절연막(oxide) 유무에 따른 메탈 이미지 컨트라스트(metal image contrast)(메탈 고유 파장 값) 차이를 이용하여 정확한 식각 타임을 계산과, 원하는 샘플을 신속하면서 정확하게 제작함으로써, 기존의 불량 분석 엔지니어의 위험한 화약 약품을 다루는 횟수를 줄여 보다 안전한 불량 분석을 수행할 수 있는 효과가 있다.As described above, the present invention calculates an accurate etching time by using a difference of metal image contrast (metal intrinsic wavelength value) according to the presence or absence of oxide of a wet etch sample. In addition, by producing the desired sample quickly and accurately, it is possible to perform safer defect analysis by reducing the number of hazardous chemicals dealing with existing defect analysis engineers.

Claims (4)

반도체 불량분석용 샘플 제작 장치에 있어서,In the sample fabrication apparatus for semiconductor defect analysis, 상기 샘플을 식각 용액과 감지 라인간을 상하로 이동시켜 주는 이동 장비;Moving equipment for moving the sample up and down between the etching solution and the sensing line; 상기 샘플의 메탈 고유 파장 값을 기 세팅(setting)하고 있는 상태에서, 상기 이동 장비에 의해 상기 식각 용액에 담겨있는 샘플이 상기 감지 라인으로 이동되면, 상기 식각 용액이 묻힌 샘플의 고유 파장 값을 감지하여 상기 기 세팅된 값에 도달될 때까지 상기 이동 장비를 제어하는 센서 및 제어부를 포함하는 것을 특징으로 하는 스톱 식각을 이용한 샘플 제작장치.When the sample contained in the etching solution is moved to the sensing line by the mobile device while the metal intrinsic wavelength value of the sample is previously set, the intrinsic wavelength value of the sample embedded with the etching solution is sensed. And a sensor and a controller for controlling the mobile device until the preset value is reached. 제 1 항에 있어서,The method of claim 1, 상기 기 세팅된 메탈 고유 파장 값은 상기 샘플의 정확한 식각을 위해 사전에 저장한 값인 것을 특징으로 하는 스톱 식각을 이용한 샘플 제작장치.The predetermined metal intrinsic wavelength value is a sample manufacturing apparatus using a stop etching, characterized in that the value stored in advance for accurate etching of the sample. 제 2 항에 있어서,The method of claim 2, 상기 메탈 고유 파장 값은 메탈 이미지 컨트라스트(metal image contrast)인 것을 특징으로 하는 스톱 식각을 이용한 샘플 제작장치.The metal intrinsic wavelength value is a sample manufacturing apparatus using a stop etching, characterized in that the metal image contrast (metal image contrast). 제 3 항에 있어서,The method of claim 3, wherein 상기 메탈 이미지 컨트라스트(metal image contrast)를 이용한 스톱식각(stop etch)에는 플라즈마 인핸스드 화학기상증착(Plasma Enhanced Chemical Vapor Deposition : PE-CVD) 티이오에스(tetraethoxy-silane : TEOS) 습식 식각과, 상압화학기상증착(Atmospheric Pressure Chemical Vapor Deposition : APCVD) 절연막(oxide) 습식 식각과, 서멀 절연막(thermal oxide) 식각과, 인산(H3PO4)의 질화막 식각과, 상기 메탈 막질 중 알루미늄(Al)/구리(Cu)의 식각과, 상기 메탈 막질 중 티타늄(Ti)/질화 티타늄(TiN)의 식각으로 구분되는 것을 특징으로 하는 스톱 식각을 이용한 샘플 제작장치.The stop etch using the metal image contrast includes plasma enhanced chemical vapor deposition (PE-CVD), tetraethoxy-silane (TEOS) wet etching, and atmospheric pressure chemistry. Atmospheric Pressure Chemical Vapor Deposition (APCVD) wet etching of oxide, thermal oxide etching, nitride etching of phosphoric acid (H 3 PO 4 ), aluminum / copper in the metal film (Cu) and the sample manufacturing apparatus using a stop etching, characterized in that divided into the etching of titanium (Ti) / titanium nitride (TiN) of the metal film.
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