KR20030073843A - Film bulk acoustic resonator filter and manufacturing method for the same - Google Patents
Film bulk acoustic resonator filter and manufacturing method for the same Download PDFInfo
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- KR20030073843A KR20030073843A KR1020020013595A KR20020013595A KR20030073843A KR 20030073843 A KR20030073843 A KR 20030073843A KR 1020020013595 A KR1020020013595 A KR 1020020013595A KR 20020013595 A KR20020013595 A KR 20020013595A KR 20030073843 A KR20030073843 A KR 20030073843A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 6
- 238000009792 diffusion process Methods 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 2
- KPSZQYZCNSCYGG-UHFFFAOYSA-N [B].[B] Chemical compound [B].[B] KPSZQYZCNSCYGG-UHFFFAOYSA-N 0.000 claims 1
- 238000009413 insulation Methods 0.000 abstract 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000010295 mobile communication Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/64—Filters using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/46—Filters
- H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material
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- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
본 발명은 박막 용적 공진기(Film Bulk Acoustic Resonator, 이하 FBAR라함) 필터에 관한 것으로서, 특히 소형화가 가능하면서도 통과되는 주파수 대역을 결정하는 공진주파수의 조정이 용이한 FBAR 필터에 관한 것이다.The present invention relates to a thin film bulk resonator (FBAR) filter, and more particularly to a FBAR filter that can be miniaturized and easy to adjust the resonant frequency to determine the frequency band to be passed.
RF 무선 이동 통신 부품중 필터는 무수히 많은 공중파중 사용자가 필요로 하는 신호를 선택하거나 전송하고자하는 신호를 걸러주는 역할을 하기 때문에 핵심 수동 부품중의 하나이다.Among RF wireless mobile communication components, filters are one of the key passive components because they play a role in selecting a signal required by a user in a myriad of air waves or filtering a signal to be transmitted.
이러한, RF 무선 이동 통신 부품으로 유전체 공진기(Dielectric Resonator) 필터, 표면탄성파 필터 및 FBAR 필터가 많이 사용되고 있는데, 상기 유전체 공진기(Dielectric Resonator) 필터는 높은 유전율, 저삽입손실, 고온에서의 안성성, 내진도, 내충격성의 장점이 있으나, 기술적 발전동향인 소형화 및 MMIC(Monolithic Microwave Integrated Circuit)화에는 기술적 한계를 나타내고 있으며, 상기 표면탄성파 필터는 초고주파 대역에서의 적용이 어렵고, 반도체 기판에서 이루어지는 MMIC(Monolithic Microwave Integrated Circuit)구조와 단일칩상으로 구현하기가 어렵다.Dielectric resonator filters, surface acoustic wave filters, and FBAR filters are widely used as RF wireless mobile communication components. In addition, there is an advantage of impact resistance, but the technical development trend of miniaturization and MMIC (Monolithic Microwave Integrated Circuit) has shown technical limitations, the surface acoustic wave filter is difficult to apply in the ultra-high frequency band, MMIC (Monolithic Microwave) made in a semiconductor substrate It is difficult to realize the integrated circuit structure and single chip.
이와 달리, 상기 FBAR 필터는 RF 능동소자들과의 자유로운 결합이 가능하고 초경량 및 초경박이며 반도체 공정을 이용한 대량 생산이 가능하기 때문에 모든 면에서 차세대 무선 이동 통신 필터에 가장 이상적이라고 할 수 있다.On the other hand, the FBAR filter is ideal for the next generation wireless mobile communication filter in all respects because it can be freely combined with RF active elements and can be manufactured in ultra light, ultra thin, and semiconductor processes.
이러한, 상기 FBAR 필터에 사용되는 FBAR의 구조는 도1 에 도시된 바와 같이, 외부로부터 전계(2)가 가해지면 전기적 에너지가 기계적 에너지로 변환되어 진동하는 압전층(6)과, 상기 압전층(6)의 상,하부에 위치되어 상기 전계(2)가 상기 압전층(6)에 인가될 수 있도록 하는 상,하부 전극(4, 8)으로 구성된다.As shown in FIG. 1, the structure of the FBAR used in the FBAR filter includes a piezoelectric layer 6 and an electric piezoelectric layer 6 that vibrate by converting electrical energy into mechanical energy when an electric field 2 is applied from the outside. It is composed of upper and lower electrodes (4, 8) which are located at the upper and lower portions of 6) so that the electric field (2) can be applied to the piezoelectric layer (6).
또한, 상기 FBAR는 상기 압전층(6)이 진동함에 따라 임피던스가 무한대 및 "0"이 되는 공진 주파수가 주기적으로 발생되며, 그 이외의 부분에서는 캐패시턴스 특성을 보이게 되는데, 이러한 특성을 이용하여 도2 에 도시된 바와 같이, 서로 공진 주파수가 다른 복수개의 FBAR(11, 12)를 직렬 및 병렬로 연결함으로써, 래터 타입(Ladder type)의 FBAR 필터를 구현한다.In addition, the FBAR periodically generates a resonance frequency at which the impedance becomes infinity and " 0 " as the piezoelectric layer 6 vibrates, and shows capacitance characteristics at other portions thereof. As shown in FIG. 3, a plurality of FBARs 11 and 12 having different resonance frequencies are connected in series and in parallel to implement a Later type FBAR filter.
이때, 상기 복수개의 FBAR(11, 12)에서 발생되는 공진 주파수를 각각 직렬 및 병렬 공진 주파수라 할때, 상기 직렬 및 병렬 공진 주파수가 다르게 나타나게 하게 되면, 상기 직렬 및 병렬 공진 주파수의 차에 따라 통과되는 주파수 대역 및 대역폭이 결정되게 된다.In this case, when the resonant frequencies generated in the plurality of FBARs 11 and 12 are called series and parallel resonant frequencies, respectively, when the series and parallel resonant frequencies appear differently, they pass according to the difference between the series and parallel resonant frequencies. The frequency band and bandwidth to be determined are determined.
한편, 상기 복수개의 FBAR(11, 12)로부터 발생되는 상기 직렬 및 병렬 공진 주파수가 다르게 나타나도록 하기 위해서 상기 복수개의 FBAR(11, 12)에 포함된 압전층의 두께를 다르게 조절하거나 상기 복수개의 FBAR(11, 12)의 상부 전극의 두께를 다르게 조절하게 된다.Meanwhile, in order for the series and parallel resonance frequencies generated from the plurality of FBARs 11 and 12 to appear differently, the thicknesses of the piezoelectric layers included in the plurality of FBARs 11 and 12 are adjusted differently or the plurality of FBARs. The thicknesses of the upper electrodes 11 and 12 are adjusted differently.
그러나, 상기 압전층의 두께를 조절하게 되면 상기 복수개의 FBAR(11, 12)를 각각 증착해야 하므로 제조 공정이 복잡하게 되고, 상기 복수개의 FBAR(11, 12)의 상부 전극의 두께를 다르게 하기 위해서는 기존에 형성된 상부 전극과 다른 재질의 전극을 추가해야 하므로 전체적이 두께가 증가하게 될뿐만 아니라, 전극 패턴닝시 사용되는 식각액을 선택할 때 기존의 상부 전극과 추가되는 전극을 모두 고려하여 식각해야 하기 때문에 공정이 복잡해지는 문제점이 있다.However, when the thickness of the piezoelectric layer is adjusted, the plurality of FBARs 11 and 12 must be deposited, respectively, so that the manufacturing process is complicated, and in order to change the thickness of the upper electrodes of the plurality of FBARs 11 and 12. Since the top electrode and the electrode formed of a different material must be added, the overall thickness increases, and when selecting the etchant used for electrode patterning, the top electrode and the added electrode must be considered in consideration of etching. There is a problem that the process is complicated.
본 발명은 상기한 종래 기술의 문제점을 해결하기 위하여 안출된 것으로서, 그 목적은 복수개의 FBAR에서 발생되는 직렬 및 병렬 공진 주파수를 다르게 구현하기 위하여 FBAR의 압전층 및 상부 전극의 두께를 변화시키지 않으면서도 FBAR의 제조 공정이 간소화되는 FBAR 필터 및 제조 방법을 제공하는데 있다.The present invention has been made to solve the above-described problems of the prior art, the object of which is to change the thickness of the piezoelectric layer and the upper electrode of the FBAR to implement different series and parallel resonant frequencies generated in a plurality of FBAR An object of the present invention is to provide an FBAR filter and a manufacturing method that simplify the manufacturing process of the FBAR.
도1 은 일반적인 FBAR의 구조가 도시된 사시도,1 is a perspective view showing the structure of a typical FBAR;
도2 는 일반적인 래더타입의 FBAR 필터가 도시된 도면,2 is a diagram illustrating a general ladder type FBAR filter;
도3 은 본 발명에 따른 FBAR 필터의 구조가 도시된 단면도,3 is a cross-sectional view showing the structure of an FBAR filter according to the present invention;
도4 및 도5 는 본 발명에 따른 FBAR 필터의 제조방법이 도시된 평면도 및 단면도이다.4 and 5 are a plan view and a cross-sectional view showing a manufacturing method of the FBAR filter according to the present invention.
<도면의 주요 부분에 관한 부호의 설명><Explanation of symbols on main parts of the drawings>
21: 제1 FBAR22: 제2 FBAR21: first FBAR 22: second FBAR
23: 반도체 기판24: 절연층23: semiconductor substrate 24: insulating layer
25: 주파수 조정전극25: frequency adjusting electrode
상기한 과제를 해결하기 위한 본 발명에 따른 FBAR 필터는 반도체 기판과, 상기 반도체 기판에 형성되는 절연층과, 상기 절연층에 형성되며 상이한 공진주파수를 가지도록 전극의 두께가 다르게 형성되는 직렬 및 병렬 FBAR로 이루어지는 FBAR 필터에 있어서, 상기 병렬 FBAR는 상기 직렬 FBAR와 상기 절연층으로부터의 높이를 동일하게 하고 상이한 공진주파수가 나타날 수 있도록 상기 절연층 하면에 저면방향으로 소정의 높이를 가지는 주파수 조정전극이 형성된다.The FBAR filter according to the present invention for solving the above problems is a series and parallel in which the thickness of the electrode is formed so that the semiconductor substrate, the insulating layer formed on the semiconductor substrate, and the thickness of the electrode formed on the insulating layer has a different resonance frequency In the FBAR filter made of FBAR, the parallel FBAR is a frequency adjusting electrode having a predetermined height in the bottom direction on the lower surface of the insulating layer so that the height from the series FBAR and the insulating layer is the same and different resonant frequencies may appear. Is formed.
또한, 본 발명에 따른 FBAR 필터 제조 방법의 특징에 따르면, 직렬 및 병렬 FBAR가 형성되는 반도체 기판에서 상기 병렬 FBAR가 위치되는 면적에 소정의 깊이로 확산층을 형성하는 확산층 형성단계와, 상기 확산층이 형성된 상기 반도체 기판에 절연층을 형성하는 절연층 형성단계와, 상기 절연층에 상기 직렬 및 병렬 FBAR를 형성하는 FBAR 형성단계로 이루어진다.In addition, according to a feature of the FBAR filter manufacturing method according to the present invention, a diffusion layer forming step of forming a diffusion layer to a predetermined depth in the area where the parallel FBAR is located in the semiconductor substrate on which the series and parallel FBAR is formed, and the diffusion layer is formed The insulating layer forming step of forming an insulating layer on the semiconductor substrate, and the FBAR forming step of forming the series and parallel FBAR on the insulating layer.
이하, 본 발명의 실시 예를 첨부된 도면을 참조하여 상세히 설명한다.Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도3 은 본 발명에 따른 FBAR 필터의 구조가 도시된 단면도이다.3 is a cross-sectional view showing the structure of an FBAR filter according to the present invention.
본 발명에 따른 FBAR 필터는 반도체 기판(23)과, 상기 반도체 기판(23)상에 형성되는 절연층(24)과, 상기 절연층(24)에 형성되어 각각 직렬 공진 주파수 및 병렬 공진 주파수가 발생되는 제1 및 제2 FBAR(21, 22)와, 상기 제2 FBAR(22)가 형성된 상기 절연층(24)의 하면에 저면 방향으로 소정의 높이를 가지는 주파수 조정전극(25)로 구성된다.The FBAR filter according to the present invention is formed on the semiconductor substrate 23, the insulating layer 24 formed on the semiconductor substrate 23, and the insulating layer 24 to generate a series resonance frequency and a parallel resonance frequency, respectively. The first and second FBARs 21 and 22, and the frequency adjusting electrode 25 having a predetermined height in the bottom direction on the lower surface of the insulating layer 24 on which the second FBARs 22 are formed.
여기서, 상기 주파수 조정전극(25)는 P+ 타입의 보론(Boron)으로 이루어지며, 상기 제2 FBAR(22)에서 발생되는 병렬 공진주파수가 상기 제1 FBAR(21)에서 발생되는 직렬 공진주파수와 차이가 나도록 한다.Here, the frequency adjusting electrode 25 is made of P + type boron, and the parallel resonance frequency generated by the second FBAR 22 is different from the series resonance frequency generated by the first FBAR 21. Let me go.
이때, 상기 직렬 및 병렬 공진주파수의 차이에 따라 상기 FBAR 필터에서 통과되는 주파수 대역 및 대역폭이 결정된다.In this case, the frequency band and the bandwidth passed by the FBAR filter are determined according to the difference between the series and parallel resonant frequencies.
상기와 같이 구성된 본 발명에 따른 FBAR 필터의 제조방법을 살펴보면 다음과 같다.Looking at the manufacturing method of the FBAR filter according to the present invention configured as described above are as follows.
도4 및 도5 는 본 발명에 따른 FBAR 필터의 제조방법이 도시된 평면도 및 단면도이다.4 and 5 are a plan view and a cross-sectional view showing a manufacturing method of the FBAR filter according to the present invention.
본 발명에 따른 FBAR 필터는 먼저, 제1 및 제2 FBAR(21, 22)가 위치되는 반도체 기판(23)에서 상기 제2 FBAR(22)가 위치되는 면적에 해당하는 크기의 에칭창을 가지는 확산 마스크(26)를 상기 반도체 기판(23)에 위치시킨다.In the FBAR filter according to the present invention, first, a diffusion having an etching window having a size corresponding to an area in which the second FBAR 22 is positioned in the semiconductor substrate 23 in which the first and second FBARs 21 and 22 are positioned. A mask 26 is placed on the semiconductor substrate 23.
상기 반도체 기판(23)에 위치된 상기 확산 마스크(26)의 에칭창을 통해 상기 반도체 기판(23)의 저면 방향으로 소정의 깊이를 가지도록 P+ 타입의 보론(Boron)을 확산시킨 주파수 조정전극(27)을 형성한다.A frequency adjusting electrode in which P + type boron is diffused to have a predetermined depth in the bottom direction of the semiconductor substrate 23 through an etching window of the diffusion mask 26 positioned on the semiconductor substrate 23 ( 27).
상기 주파수 조정전극(27)을 형성한 후 상기 확산 마스크(26)를 제거하고 상기 절연층(28)를 위치시킨 다음, 상기 제1 및 제2 FBAR(21, 22)를 상기 절연층(28)에 위치시키게 된다.After forming the frequency adjusting electrode 27, the diffusion mask 26 is removed and the insulating layer 28 is positioned. Then, the first and second FBARs 21 and 22 are disposed on the insulating layer 28. It is located at.
이때, 상기 제2 FBAR(22)는 상기 반도체 기판(23)에 형성된 상기 주파수 조정전극(27)과 대향되게 위치되도록 한다.In this case, the second FBAR 22 is positioned to face the frequency adjusting electrode 27 formed on the semiconductor substrate 23.
마지막으로, 상기 반도체 기판(23)을 백사이드 에칭(Backside etching)을 통해 에칭한다.Finally, the semiconductor substrate 23 is etched through backside etching.
이때, 상기 백사이드 에칭(Backside etching)시 사용되는 에칭액으로는 상기 주파수 조정전극(27)을 이루은 P+ 타입의 보론(Boron)에 대해 선택적으로 에칭이 가능한 KOH, TMAH, EDP등이 사용된다.At this time, KOH, TMAH, EDP, etc. which can selectively etch the P + type boron constituting the frequency adjusting electrode 27 are used as the etchant used in the backside etching.
상기와 같이 구성되는 본 발명에 따른 FBAR 필터 및 그 제조 방법은 반도체 기판에 위치되는 절연층에 증착되어 형성되는 제1 및 제2 FBAR중에서 병렬 공진주파수가 발생되는 제2 FBAR와 상기 절연층을 사이에 두고 P+ 타입 보론(Boron)으로 이루어진 주파수 조정층을 상기 절연층의 하면에 형성함으로써, 상기 제1 및 제2 FBAR에서 발생되는 직렬 및 병렬 공진주파수를 다르게 구현할 수 있을뿐만 아니라 FBAR필터의 두께가 감소하게 되므로 FBAR 필터가 소형화될 수 있는 효과가 있다.The FBAR filter and the method of manufacturing the same according to the present invention configured as described above are formed between the second FBAR and the insulating layer in which the parallel resonance frequency is generated among the first and second FBARs deposited and formed on the insulating layer positioned on the semiconductor substrate. In addition, by forming a frequency adjusting layer made of P + type boron on the lower surface of the insulating layer, it is possible not only to realize the series and parallel resonance frequencies generated in the first and second FBAR differently, but also to increase the thickness of the FBAR filter. As a result, the FBAR filter can be miniaturized.
Claims (4)
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|---|---|---|---|---|
| JPS59202722A (en) * | 1983-04-30 | 1984-11-16 | Murata Mfg Co Ltd | Composite piezoelectric resonator |
| JPH0621755A (en) * | 1992-06-29 | 1994-01-28 | Clarion Co Ltd | Surface acoustic wave device |
| JPH10242797A (en) * | 1997-02-25 | 1998-09-11 | Toyo Commun Equip Co Ltd | Balanced type ultrathin plate multimode filter |
| JPH1188015A (en) * | 1997-09-04 | 1999-03-30 | Murata Mfg Co Ltd | Magnetic thin film multilayer electrode, high frequency transmission line, high frequency resonator and high frequency device |
| KR19990036702A (en) * | 1997-10-01 | 1999-05-25 | 대표취체역사장 무라타 야스타카 | Piezoelectric resonator, Frequency adjustment method of the piezoelectric resonator and communication device including the same |
| KR20010017855A (en) * | 1999-08-16 | 2001-03-05 | 정선종 | Micromachined electrical filter |
| JP2001308679A (en) * | 2000-04-21 | 2001-11-02 | Toyo Commun Equip Co Ltd | Piezoelectric filter |
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2002
- 2002-03-13 KR KR1020020013595A patent/KR20030073843A/en not_active Application Discontinuation
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59202722A (en) * | 1983-04-30 | 1984-11-16 | Murata Mfg Co Ltd | Composite piezoelectric resonator |
| JPH0621755A (en) * | 1992-06-29 | 1994-01-28 | Clarion Co Ltd | Surface acoustic wave device |
| JPH10242797A (en) * | 1997-02-25 | 1998-09-11 | Toyo Commun Equip Co Ltd | Balanced type ultrathin plate multimode filter |
| JPH1188015A (en) * | 1997-09-04 | 1999-03-30 | Murata Mfg Co Ltd | Magnetic thin film multilayer electrode, high frequency transmission line, high frequency resonator and high frequency device |
| KR19990036702A (en) * | 1997-10-01 | 1999-05-25 | 대표취체역사장 무라타 야스타카 | Piezoelectric resonator, Frequency adjustment method of the piezoelectric resonator and communication device including the same |
| JPH11168338A (en) * | 1997-10-01 | 1999-06-22 | Murata Mfg Co Ltd | Piezoelectric resonator, frequency adjustment method for piezoelectric resonator and communication equipment |
| KR20010017855A (en) * | 1999-08-16 | 2001-03-05 | 정선종 | Micromachined electrical filter |
| JP2001308679A (en) * | 2000-04-21 | 2001-11-02 | Toyo Commun Equip Co Ltd | Piezoelectric filter |
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