KR20020056695A - Pattern structure for preventing static electricity for liquid crystal display panel - Google Patents
Pattern structure for preventing static electricity for liquid crystal display panel Download PDFInfo
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- KR20020056695A KR20020056695A KR1020000086100A KR20000086100A KR20020056695A KR 20020056695 A KR20020056695 A KR 20020056695A KR 1020000086100 A KR1020000086100 A KR 1020000086100A KR 20000086100 A KR20000086100 A KR 20000086100A KR 20020056695 A KR20020056695 A KR 20020056695A
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 29
- 230000005611 electricity Effects 0.000 title description 6
- 230000003068 static effect Effects 0.000 title description 6
- 239000000523 sample Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 230000007547 defect Effects 0.000 abstract description 4
- 230000007261 regionalization Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136268—Switch defects
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- Crystallography & Structural Chemistry (AREA)
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- Ceramic Engineering (AREA)
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Abstract
Description
본 발명은 액정표시소자 패널의 정전기 방지 패턴 구조에 관한 것으로, 보다 상세하게는 정전기에 취약한 부분으로 스파크(spark)가 발생하여 액티브 영역에서의 박막트랜지스터(Thin Film Transistor: TFT)가 정상적으로 작동되지 않거나 데이터 라인이 오픈(open)되는 것을 방지할 수 있도록 된 액정표시소자 패널의 정전기 방지 패턴 구조에 관한 것이다.The present invention relates to an antistatic pattern structure of a liquid crystal display device panel, and more particularly, a spark is generated in a part that is vulnerable to static electricity, and thus, a thin film transistor (TFT) in an active region does not operate normally. The present invention relates to an antistatic pattern structure of a liquid crystal display device panel that can prevent data lines from being opened.
본 발명에 따른 액정표시소자 패널의 정전기 방지 패턴 구조는 액정 표시패널중 어레이에 사용된다.The antistatic pattern structure of the liquid crystal display panel according to the present invention is used for an array of liquid crystal display panels.
도 1 은 종래 액정표시소자 패널의 정전기 방지 패턴 구조를 나타낸 평면도이고, 도 2 는 도 1 의 A부분의 상세도로서, 이에 도시한 바와 같이, 데이터 오픈 리페어(Data Open Repair)를 위해 형성된 리페어 라인(repair line)(2)은 액정 표시패널(20)의 사각 부위 중 2곳에서 정전기 방지 회로를 통해 공통 라인(common line)(6)과 연결된다. 도면에서 상단 양쪽 점선부위는 정전기가 다량발생하는 지역을 나타낸 것이고, 상단 우측 점선부분과 그 대각선 방향에 위치한 모서리 점선 부분은 정전기 방지회로(10)가 형성된 영역을 나타낸다.FIG. 1 is a plan view illustrating an antistatic pattern structure of a conventional LCD panel, and FIG. 2 is a detailed view of a portion A of FIG. 1, and as shown therein, a repair line formed for data open repair. The repair line 2 is connected to the common line 6 through an antistatic circuit at two of the rectangular portions of the liquid crystal display panel 20. In the drawing, both upper dotted lines indicate areas where a large amount of static electricity is generated, and the upper right dotted lines and the corner dotted lines positioned in the diagonal direction indicate areas in which the antistatic circuit 10 is formed.
즉 상기와 같은 구조에서, 연결을 전혀 하지 않은 경우, 리페어 라인(2)은 완전하게 독립되어 형성되므로 정전기에 가장 취약한 부분(상단 두 점선부분)이 되기 때문에 일부에 공통(common)라인(6)과 정전기 방지회로를 연결한 것이다. 2곳 만을 연결한 이유는 그 이상 연결할 경우에 공통 라인(6)과의 저항이 작아지므로(정전기 방지회로는 일종 가변 저항인데, 리페어 라인(2)과 공통라인(6)사이에 병렬로 형성되어 있는 구조임) 공통 신호와 데이터 신호의 간섭이 발생할 수 있다. 따라서 연결부분을 증가시키는 것은 바람직하지 않다.That is, in the structure as described above, when no connection is made at all, the repair line 2 is formed completely independent, so that the common line 6 is partially formed because the repair line 2 is the most vulnerable to the static electricity (upper two dotted lines). And anti-static circuit. The reason for connecting only two places is that the resistance with the common line 6 becomes smaller when the connection is made longer (the antistatic circuit is a variable resistor, and is formed in parallel between the repair line 2 and the common line 6). Structure). The interference between the common signal and the data signal may occur. Therefore, it is not desirable to increase the connecting portion.
상기와 같은 종래 액정표시소자 패널의 정전기 방지 패턴 구조에서, 이론상으로는 발생한 정전기가 정전기 방지회로(10)를 통해 패널의 전 부분으로 확산되어동일한 전하(charge)값을 가져야 하지만, 실제 공정상에서는 정전기 방지 회로(10)를 통해 전하가 확산되기도 하지만, 일부 구조적으로 취약한 부분에서 스파크(spark)가 발생하여 패턴(pattern)에 손상을 입히기도 하는 문제점이 있다. 이와 같은 현상에 의해 액정 표시소자 패널(20)의 액티브 영역(4)의 TFT가 정상적으로 작동하지 않거나 데이터 라인이 오픈(open)되기도 하는 문제점이 있었다.In the antistatic pattern structure of the conventional liquid crystal display device panel as described above, in principle, the generated static electricity is diffused to all parts of the panel through the antistatic circuit 10 to have the same charge value, but in actual process, the antistatic Although charge is diffused through the circuit 10, there is a problem in that a spark occurs in some structurally weak parts and damages a pattern. Due to such a phenomenon, there is a problem in that the TFT of the active region 4 of the liquid crystal display device panel 20 does not operate normally or the data line is opened.
본 발명의 목적은 상기한 바와 같은 종래 액정표시소자 패널의 정전기 방지 패턴구조에서의 문제점을 개선하기 위해 안출한 것으로, 패널의 사각 부위에 정전기 방지회로의 추가 없이 정전기 발생시 다른 어떤 지점(point)보다도 빨리 터져서(즉, 전하 방전되어) 전하(charge)가 사라지도록 한 개선된 액정표시소자 패널의 정전기 방지 패턴구조를 제공함에 있다.SUMMARY OF THE INVENTION An object of the present invention is to solve the problems in the antistatic pattern structure of a conventional liquid crystal display device panel as described above. An improved anti-static pattern structure of a liquid crystal display device panel which explodes quickly (i.e., charges discharged) to disappear charges.
도 1 은 종래 액정표시소자 패널의 정전기 방지 패턴 구조를 나타낸 평면도.1 is a plan view showing an antistatic pattern structure of a conventional liquid crystal display device panel.
도 2 는 도 1 의 A부분의 상세도.FIG. 2 is a detail view of portion A of FIG. 1. FIG.
도 3 은 본 발명에 따른 액정표시소자 패널의 정전기 방지 패턴 구조를 나타낸 평면도.3 is a plan view showing an antistatic pattern structure of a liquid crystal display device panel according to the present invention.
도 4 는 도 3 의 B부분의 상세도이다.4 is a detailed view of a portion B of FIG. 3.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
22: 리페어 라인(Repair Line) 26 : 공통라인(Common Line)22: Repair Line 26: Common Line
23,27 : 연장부 23a, 27a : 탐침부23,27: extension part 23a, 27a: probe part
30 : 액정표시소자 패널 40 : 정전기 방전 영역30 liquid crystal display device panel 40 electrostatic discharge region
상기한 바와 같은 목적을 달성하기 위한 본 발명의 바람직한 일 실시예에 따르면, 5마스크 혹은 7마스크 공정을 이용하여 제작한 액정 표시소자 패널에 있어서, 상기 패널은 데이터 오픈을 리페어(repair)할 수 있도록 형성된 사각 형상의 리페어 라인의 모서리부에서 일정길이만큼 연장형성한 연장부 패턴에 형성된 단부가 각진 형상인 패턴과, 상기 리페어라인의 연장부 패턴에 대응하는 데이터 라인부에서도 연장부 패턴에 형성된 단부가 각진 모양인 패턴으로 구성되어, 이 각진 형상의 패턴부분에서 패널의 액티브 패턴에는 영향이 없도록 최우선으로 정전기 터짐(또는 방전)이 일어날 수 있도록 형성된 것을 특징으로 하는 액정표시소자 패널의 정전기 방지 패턴 구조가 제공된다.According to a preferred embodiment of the present invention for achieving the above object, in the liquid crystal display device panel manufactured by using a 5 mask or 7 mask process, the panel can repair the data open. The end portion formed in the extension pattern formed by extending a predetermined length from the corner portion of the formed square-shaped repair line is an angular shape, and the end portion formed in the extension pattern in the data line part corresponding to the extension pattern of the repair line The antistatic pattern structure of the liquid crystal display panel according to claim 1, wherein the antistatic pattern structure of the liquid crystal display device panel is formed so as to cause electrostatic burst (or discharge) at the highest priority so as not to affect the active pattern of the panel in the angled pattern portion. Is provided.
또한, 본 발명에 있어서, 정전기 터짐 패턴영역은 리페어 라인과 공통 라인사이에 있는 것을 특징으로 한다.In the present invention, the electrostatic burst pattern region is characterized by being between the repair line and the common line.
또한, 본 발명에 있어서, 상기 정전기 터짐 패턴의 끝부분의 각진 모양은 전하가 다량 모일 수 있도록 탐침 모양의 탐침부 패턴인 것을 특징으로 한다.In addition, in the present invention, the angular shape of the end of the electrostatic burst pattern is characterized in that the probe pattern of the probe shape so that a large amount of charge can be collected.
또한, 본 발명에 있어서, 상기 리페어 라인의 정전기 터짐 패턴과 상기 공통라인의 정전기 터짐 패턴은 서로 동일한 금속을 사용하는 것을 특징으로 한다.In addition, in the present invention, the electrostatic burst pattern of the repair line and the electrostatic burst pattern of the common line may be made of the same metal.
또한, 본 발명에 있어서, 상기 리페어 라인의 정전기 터짐 패턴과 상기 공통 라인의 정전기 터짐 패턴을 다른 층의 금속을 사용하는 것을 특징으로 한다.Further, in the present invention, the electrostatic burst pattern of the repair line and the electrostatic burst pattern of the common line are characterized by using a different layer of metal.
또한, 본 발명에 있어서, 상기 리페어 라인 및 공통라인의 정전기 터짐 패턴간의 간격은 4μm이하인 것을 특징으로 한다.In the present invention, the interval between the electrostatic burst pattern of the repair line and the common line is characterized in that less than 4μm.
본 발명에 따르면, 패턴 구조는 리페어 라인(repair line)에서 연결되어 나온 패턴과 공통 라인(common line)에서 연결되어 나온 패턴을 매우 근접하도록 형성하며 근접한 부분의 패턴 모양은 전하(charge)가 집중할 수 있도록 각이 지게 형성한다.According to the present invention, the pattern structure is formed so that the pattern connected from the repair line and the pattern connected from the common line are very close to each other, and the pattern shape of the adjacent part can concentrate the charge. So that it is angled to form.
이하, 본 발명에 따른 액정표시소자 패널의 정전기 방지 패턴구조에 관하여 첨부도면을 참조하여 상세하게 설명한다.Hereinafter, the antistatic pattern structure of the liquid crystal display device panel according to the present invention will be described in detail with reference to the accompanying drawings.
도 3 은 본 발명에 따른 액정표시소자 패널의 정전기 방지 패턴 구조를 나타낸 평면도이고, 도 4 는 도 3 의 B부분의 상세도로서, 이에 도시한 바와 같이, 먼저 리페어 라인(22)을 제외한 나머지 부분의 형성 과정은 정규 7마스크 또는 5 마스크 공정으로 진행한다.3 is a plan view showing an antistatic pattern structure of a liquid crystal display device panel according to the present invention, and FIG. 4 is a detailed view of a portion B of FIG. 3, as shown in FIG. 3, except for the repair line 22. The formation process is performed with a regular 7 mask or 5 mask process.
상기 리페어 라인(22)은 동일한 금속으로 형성되지 않으므로 게이트 패턴 형성시 일부를 형성하고 데이터 패턴 형성시 나머지 부분을 형성하여 최종적으로 리페어 라인(22)을 패널 내부에 형성시킨다.Since the repair line 22 is not formed of the same metal, a part is formed at the gate pattern formation and a remaining part is formed at the data pattern formation, thereby finally forming the repair line 22 inside the panel.
상기 리페어 라인(22)을 형성할 때 리페어 라인(22)에서 일부의 패턴을 연장하여 연장부(23)를 형성하고, 상기 연장부(23)의 단부는 탐침 모양의 탐침부(23a)를 형성한다. 역시 공통라인(26)의 일부를 동일하게 연장하여 연장부(27)을 형성하고, 상기 연장부(27)의 단부는 상기 리페어 라인(22)의 연장부(23)의 탐침부(23a) 패턴과 마주보게 탐침부(27a)를 형성한다. 이때 서로의 간격은 쇼트(short)되지 않을 정도의 3μm정도의 간격을 유지하도록 형성한다. 결국 이와 같이 연장부(23)(27)의 각 탐침부(23a)(27a)를 통해 형성된 영역은 정전기 방전(또는 터짐) 영역(40)을 형성한다.When forming the repair line 22, a part of the pattern is extended from the repair line 22 to form an extension 23, and an end portion of the extension 23 forms a probe-shaped probe 23a. do. Also, a part of the common line 26 is extended in the same manner to form an extension part 27, and an end portion of the extension part 27 forms a probe part 23a pattern of the extension part 23 of the repair line 22. A probe portion 27a is formed to face each other. At this time, the spacing of each other is formed so as to maintain a spacing of about 3μm so as not to be short (short). As a result, the regions formed through the probes 23a and 27a of the extension portions 23 and 27 form the electrostatic discharge (or burst) regions 40.
상기 도 4 에 도시된 바와 같은, 정전기 터짐 패턴은 그 효과를 배가시키기 위하여 동일한 금속의 경우 뿐만 아니라 다른 층끼리도 형성한다. 예를 들어 게이트-게이트간, 게이트-데이터간, 게이트-ITO(Indium Tin Oxide)간에도 형성한다.As shown in FIG. 4, the electrostatic burst pattern forms not only the same metal but also different layers in order to double the effect. For example, they are also formed between gate-gate, gate-data, and gate-ITO (Indium Tin Oxide).
따라서, 상기한 본 발명에 따른 액정표시소자의 정전기 방지 패턴 구조에 의하면, 정전기 터짐 패턴을 리페어 라인과 공통라인의 사이에 형성하여 그곳에서 정전기 터짐(또는 방전)이 일어나도록 함으로써 효과적으로 정전기 방지에 대한 대책을 강구할 수 있도록 되어, 결국 정전기에 의해 발생하는 픽셀 결함(pixeldefect), 데이터 오픈(data open)의 결함(defect)을 감소시킬 수 있을 뿐만 아니라 이에 따라 수율이 향상되는 결과를 가져오는 효과가 있다.Therefore, according to the antistatic pattern structure of the liquid crystal display device according to the present invention, by forming an electrostatic burst pattern between the repair line and the common line to cause the electrostatic burst (or discharge) there, effectively As a result, countermeasures can be taken to reduce pixel defects and data open defects caused by static electricity, resulting in improved yields. have.
Claims (6)
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| KR100752368B1 (en) * | 2004-11-15 | 2007-08-27 | 삼성에스디아이 주식회사 | Flat panel display device and fabricating method of the same |
| KR100788589B1 (en) * | 2007-01-19 | 2007-12-26 | 삼성에스디아이 주식회사 | Organic light emitting diodes display |
| KR100983586B1 (en) * | 2003-12-30 | 2010-09-28 | 엘지디스플레이 주식회사 | A liquid crystal device and a method for fabricating the same |
| KR20140075920A (en) * | 2012-12-11 | 2014-06-20 | 엘지디스플레이 주식회사 | Display Device |
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| KR100983586B1 (en) * | 2003-12-30 | 2010-09-28 | 엘지디스플레이 주식회사 | A liquid crystal device and a method for fabricating the same |
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