KR20020056689A - Super high transmittance color filter structure - Google Patents
Super high transmittance color filter structure Download PDFInfo
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- KR20020056689A KR20020056689A KR1020000086092A KR20000086092A KR20020056689A KR 20020056689 A KR20020056689 A KR 20020056689A KR 1020000086092 A KR1020000086092 A KR 1020000086092A KR 20000086092 A KR20000086092 A KR 20000086092A KR 20020056689 A KR20020056689 A KR 20020056689A
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- 238000002834 transmittance Methods 0.000 title claims description 16
- 229910019923 CrOx Inorganic materials 0.000 claims abstract description 14
- 239000000049 pigment Substances 0.000 claims abstract description 11
- 239000011521 glass Substances 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 52
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 abstract description 10
- 239000010408 film Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/52—RGB geometrical arrangements
Abstract
Description
본 발명은 초고투과 컬러 필터구조에 관한 것으로, 보다 상세하게는 컬러필터의 블랙매트릭스구조에 반사막을 코팅하여 백라이트를 통해 입사되는 광을 반사시켜 광효율을 높일 수 있도록 된 초고투과 컬러 필터구조에 관한 것이다.The present invention relates to an ultra-high transmittance color filter structure, and more particularly, to an ultra-high transmittance color filter structure in which a reflective film is coated on a black matrix structure of a color filter to reflect light incident through a backlight to increase light efficiency. .
TFT(Thin Film Transistor)-LCD(Liquid Crystal Display)가 고정세, 고품위로 됨에 따라, 백라이트(BackLight:B/L)에서 발생하는 광에 대한 고투과율의 요구가 높아지고 있다.As the thin film transistor (TFT) -liquid crystal display (LCD) becomes high definition and high quality, the demand for high transmittance of light generated from a backlight (B / L) is increasing.
현재는 B/L광의 패널 투과율은 10%미만으로 주로 편광판(약 40%), 컬러 필터(Color Filter:C/F)(약 35%)를 통과할 때 대부분의 광이 흡수된다. C/F 제조업체에서는 C/F투과율을 향상하기 위해서 초고투과 안료에 개발을 집중하고 있다.Currently, the panel transmittance of B / L light is less than 10%, and most of the light is absorbed mainly through the polarizer (about 40%) and the color filter (C / F) (about 35%). C / F manufacturers are focusing their development on ultra-high-permeability pigments to improve C / F transmittance.
C/F의 구조는 도 1 에 도시한 바와 같이, 컬러필터 유리(8)의 하면에 형성된 블랙 매트릭스(BlackMatrix:BM) (30)성막층과 적색(red), 녹색(green) 및 청색(blue) 안료층으로 구성되어 있다. BM층은 C/F전체 면적의 20∼30%를 차지하며 콘트라스트(contrast) 및 빛샘을 방지하는 역할을 하고 있다.As shown in FIG. 1, the C / F structure is formed of a black matrix (BM) 30 formed on the bottom surface of the color filter glass 8, and a red, green, and blue layer. ) Pigment layer. The BM layer occupies 20-30% of the total area of C / F and serves to prevent contrast and light leakage.
참고부호 2 는 신호전극으로서 데이터 혹은 게이트 전극을 나타낸다. 참고부호 6은 투명전도막을 나타내고, 12 및 20은 각각 편광판을 나타낸다.Reference numeral 2 denotes a data or gate electrode as a signal electrode. Reference numeral 6 represents a transparent conductive film, and 12 and 20 each represent a polarizing plate.
그리고 종래의 TFT-LCD 구조에서 정규 화이트(Normal white)로 상하판의 전극에 전압이 인가되어 광이 통과되는 상태를 도 2 에 나타내었고, 이에 도시한 바와 같이, B/L(10)에서 발생한 광의 40%는 패널의 화소전극(4)에 대해서, 경사진 방향으로 입사해서 BM(30)에 입사된 광은 흡수됨으로 C/F에 대한 광투과율이 감소되는 문제점이 있었다.In addition, in the conventional TFT-LCD structure, a state in which light is applied by applying voltage to the upper and lower electrodes as normal white is shown in FIG. 2, and as shown in FIG. 2, it occurs in the B / L 10. Since 40% of the light is incident on the pixel electrode 4 of the panel in the inclined direction and the light incident on the BM 30 is absorbed, the light transmittance with respect to C / F is reduced.
본 발명은 상기한 바와 같은 종래 액정표시장치에서의 문제점을 개선하기 위해 안출한 것으로, 블랙 매트릭스에 반사막을 형성하여 B/L로부터 입사되는 광을 반사시켜 고투과율을 달성할 수 있도록 하기 위한 초고투과 컬러 필터구조를 제공함에 있다.The present invention has been made to solve the problems in the conventional liquid crystal display device as described above, by forming a reflective film on the black matrix to reflect the light incident from the B / L ultra-high transmittance to achieve a high transmittance To provide a color filter structure.
도 1 은 종래 TFT LCD의 개략적인 구조를 나타낸 단면도.1 is a cross-sectional view showing a schematic structure of a conventional TFT LCD.
도 2 는 종래 TFT LCD의 컬러필터에서 통과 및 차단되는 광선을 나타낸 단면도.2 is a cross-sectional view showing light rays that pass and are blocked in a color filter of a conventional TFT LCD.
도 3 은 본 발명에 따른 TFT LCD에서 컬러필터상에 형성된 반사막에 의해 광선이 통과되는 상태를 나타내는 단면도.3 is a cross-sectional view showing a state in which light rays pass by a reflective film formed on a color filter in a TFT LCD according to the present invention;
도 4a 및 도 4b는 종래 컬러필터에서의 BM(BlackMatrix) 상부구조와 본 발명에 따른 BM 상부구조를 나타낸 단면도이다.4A and 4B are cross-sectional views illustrating a BM (BlackMatrix) superstructure and a BM superstructure according to the present invention in a conventional color filter.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
8 : 컬러 필터유리 32 : CrOx층8: color filter glass 32: CrOx layer
34 : Cr층 36 : CrNx층34: Cr layer 36: CrNx layer
40 : 안료층 50 : ITO(Indium Tin Oxide)40: pigment layer 50: ITO (Indium Tin Oxide)
60 : 반사층60: reflective layer
상기한 바와 같은 목적을 달성하기 위한 본 발명의 바람직한 일실시예에 따르면, 액정표시소자의 C/F(Color Filter)에 있어서, 상기 C/F의 BM(BlackMatrix)은 컬러 필터 유리와 접하는 부분에는 성막된 CrOx/Cr층과, 상기 CrOx/Cr층 상부에 형성된 안료(적색(R), 녹색(G), 청색(B))층과, 상기 안료층상에 형성된 투명전도막과, 상기 투명전도막상에 형성된 반사층으로 이루어진 것을 특징으로 하는 초고투과 컬러필터구조가 제공된다.According to a preferred embodiment of the present invention for achieving the above object, in the C / F (Color Filter) of the liquid crystal display, the BM (BlackMatrix) of the C / F is in contact with the color filter glass A deposited CrOx / Cr layer, a pigment (red (R), green (G), blue (B)) layer formed on the CrOx / Cr layer, a transparent conductive film formed on the pigment layer, and the transparent conductive film image Provided is an ultra-high transmissive color filter structure comprising a reflective layer formed on the substrate.
본 발명에 있어서, 상기 반사층은 Al, AlNd등을 성막하여 C/F로 경사한 광이 BM상의 반사막으로 인해 투과율을 높일 수 있도록 된 것을 특징으로 한다.In the present invention, the reflective layer is formed by depositing Al, AlNd, etc., characterized in that the light inclined to C / F can increase the transmittance due to the reflective film of the BM phase.
본 발명에 있어서, 상기 C/F의 BM이 Cr층의 단층구조로 된 것을 특징으로 한다.In the present invention, the C / F BM has a single layer structure of Cr layer.
본 발명에 있어서, 상기 C/F의 BM이 Cr계통이 아닌 수지계통인 것을 특징으로 한다.In the present invention, the C / F BM is characterized in that the resin system, not Cr system.
이하, 본 발명에 따른 초고투과 컬러 필터구조에 관하여 첨부도면을 참조하여 상세하게 설명한다.Hereinafter, the ultra high transmission color filter structure according to the present invention will be described in detail with reference to the accompanying drawings.
도 3 은 본 발명에 따른 TFT LCD에서 컬러필터상에 형성된 반사막에 의해 광선이 통과되는 상태를 나타내는 단면도로서, 정규 화이트(Normal white)로 상하판의 전극에 전압이 인가되어 광이 통과되는 상태를 나타내는데, 이에 도시한 바와 같이, 블랙 매트릭스 형성공정 중에서 투명전도막(6)을 형성한 다음 그 투명전도막(6)상에 반사층(60)을 형성한 구조이다. 이로인해 화살표로 도시한 바와 같이, 종래 블랙매트릭스에 흡수되었던 광들이 상기 반사층(60)에 반사되어 결국 투과된다.3 is a cross-sectional view illustrating a state in which light rays pass through a reflective film formed on a color filter in a TFT LCD according to the present invention, and a state in which light passes through a voltage applied to upper and lower electrodes in normal white. As shown in the figure, the transparent conductive film 6 is formed during the black matrix forming process, and then the reflective layer 60 is formed on the transparent conductive film 6. As a result, as shown by the arrow, the light absorbed by the conventional black matrix is reflected by the reflective layer 60 and is eventually transmitted.
C/F의 BM은 광의 투과율을 저감하기 위해 Cr층을 사용하며 반사율의 저감을 위해서 대부분 종래 도 4 의 (a)와 같이 3층구조(CrOx, Cr, CrNx)로 구성되어 있다. 즉 컬러 필터 유리(8)하부에 CrOx층(32), Cr층(34), CrNx층(36)을 순서대로 적층 형성하고, CrNx(36)층상에 다시 안료층(40)과 ITO층(50)을 형성하여 이루어진다. 이와 같은 블랙 매트릭스 구조에서는 B/L(10)에서 발생한 광이 경사지게 C/F의 BM에 입사하는 경우 도 2 에서와 같이 흡수되어 버린다.The BM of C / F uses a Cr layer to reduce light transmittance and is mostly composed of a three-layer structure (CrOx, Cr, CrNx) as shown in FIG. 4 (a). That is, the CrOx layer 32, the Cr layer 34, and the CrNx layer 36 are laminated in the order below the color filter glass 8, and the pigment layer 40 and the ITO layer 50 are again on the CrNx 36 layer. Is formed. In such a black matrix structure, when the light generated in the B / L 10 is incident on the BM of the C / F inclinedly, it is absorbed as shown in FIG. 2.
그러나 본 발명에 따른 블랙매트릭스 구조를 나타낸, 도 4 의 (b)와 같이 종래 CrOx층(32) 대신에 반사층(60)을 성막해서 사용하면, 상기 도 3 과 같이 B/L(10) 반사판 혹은 신호선(게이트, 데이터 선)(2)에서 반사되어 C/F로 재입사되어 투과율이 높아진다.However, when the reflective layer 60 is formed instead of the conventional CrOx layer 32 as shown in FIG. 4 (b) showing the black matrix structure according to the present invention, the B / L (10) reflecting plate or Reflected by the signal line (gate, data line) 2, it is reincident to C / F to increase the transmittance.
한편, 상기 도 4 의 (a)에서 BM은 광의 투과율을 저감하기 위해서 Cr층을 사용하며 반사율의 저감을 위해서 3층구조(CrOx, Cr, CrNx)로 구성되어 있다. 그리고 그것의 상부에는 공통전극으로 투명전도막(6)이 성막되어있다. BM의 3층구조에서 CrOx/Cr층(32)(34)은 외부에서 입사하는 광의 반사율을 저감하며, CrNx/Cr은 액정을 통과한 광의 반사율을 저감하기 위한 것이다. 특히 CrNx층(36)을 사용하는 것은 액정층과 접촉함으로 산화를 방지하고자 하는 목적도 있다. 3층구조의 BM은 Cr층(32)을 스퍼트방식으로 성막하면서 O2를 주입하는 반응성 스퍼트 방법으로 제작한다. 그리고 B/L에서 발생한 광의 약 40%는 패널의 화소전극에 대해서 도 2 에서와 같이 경사진 방향으로 입사하고, C/F의 BM에 입사한 광은 흡수된다. C/F에서 BM이 차지하는 비율이 큼으로 BM층에 의한 광손실은 크다.On the other hand, in Figure 4 (a) BM is used in the Cr layer to reduce the light transmittance and is composed of a three-layer structure (CrOx, Cr, CrNx) to reduce the reflectance. On top of that, a transparent conductive film 6 is formed as a common electrode. In the BM three-layer structure, the CrOx / Cr layers 32 and 34 reduce the reflectance of light incident from the outside, and CrNx / Cr is for reducing the reflectance of the light passing through the liquid crystal. In particular, the use of the CrNx layer 36 is also intended to prevent oxidation by contacting the liquid crystal layer. The BM of the three-layer structure is produced by the reactive sputtering method in which O 2 is injected while the Cr layer 32 is formed by the sputtering method. About 40% of the light generated in the B / L is incident on the inclined direction with respect to the pixel electrode of the panel as shown in FIG. 2, and light incident on the BM of the C / F is absorbed. As the ratio of BM to C / F is large, the optical loss due to the BM layer is large.
이에 비해 도 4 와 (b)와 같이, 본 발명에 따르면 BM층이 CrOx/Cr(32)(34) 의 2층 성막으로 형성하고, 안료층(40), 투명전도막(6)을 코팅한 후, 반사층(60)을 성막해서 사용하면, 도 3 과 같이 B/L(10) 반사판 혹은 신호선(게이트, 데이터선)(2)에서 반사되어 C/F로 재입사되어 투과율을 높이는 역할을 한다.4 and (b), according to the present invention, the BM layer is formed by forming a two-layer film of CrOx / Cr (32) (34), and coated with the pigment layer (40) and the transparent conductive film (6). Then, when the reflective layer 60 is formed and used, it is reflected by the B / L 10 reflector or signal line (gate, data line) 2 as shown in FIG. 3 and re-entered into C / F to increase the transmittance. .
상기 반사층(60)으로는 Al, Al 합금을 사용한다. 그리고 게이트 및 데이터 신호선(2)도 Al,Al 합금 등을 사용하여 반사율을 높인다.Al and Al alloys are used as the reflective layer 60. The gate and data signal lines 2 are also made of Al and Al alloys to increase reflectance.
패널이 고정세, 대면적이 됨에 따라 신호전극의 지연시간을 감소하기 위해서 Al계열의 성막을 사용하는 추세이다.As the panel becomes high definition and large, it is a trend to use Al-based film formation to reduce the delay time of the signal electrode.
따라서, 상기한 본 발명에 따른 초고투과 칼라필터 구조에 의하면, C/F의 BM이 3층구조가 아닌 단층 즉 Cr 성막층만 있어도 본 발명의 효과는 달성된다.Therefore, according to the ultra-high permeable color filter structure according to the present invention, the effect of the present invention is achieved even if the BM of C / F is not a three-layer structure, that is, a single layer, that is, a Cr film forming layer.
C/F의 BM이 수지계통일 때도 본 발명이 적용된다.The present invention also applies when the BM of C / F is a resin system.
C/F의 BM을 2중막을 제작하고 그 상부에 반사층을 형성함에 의해 B/L에서 발생하는 경사진 광이 BM에 입사하여 흡수되지 않고 반사되어 다시 C/F로 입사됨으로종래의 초고투과 C/F 투과율, 약 38%에 대해서 2∼3%의 상승효과를 기대할 수 있다.By making a double film of B / C of C / F and forming a reflective layer on top of it, the inclined light generated in B / L is not incident and absorbed by BM, but is reflected and entered into C / F. A synergistic effect of 2-3% can be expected for / F transmittance of about 38%.
또한 BM과 동일한 3층 성막구조임으로 추가되는 재료비는 없으며 외부광에 대해서는 반사저감효과는 종래와 동일함으로 종래와 동일한 효과를 얻을 수 있다.In addition, since there is no additional material cost due to the same three-layer film-forming structure as BM, the effect of reducing reflection for external light is the same as in the related art, thereby obtaining the same effect as in the conventional art.
아울러 상기한 본 발명의 바람직한 실시예는 예시의 목적을 위해 개시된 것이며, 당업자라면 본 발명의 사상과 범위 안에서 다양한 수정, 변경, 부가 등이 가능할 것이며, 이러한 수정 변경 등은 이하의 특허청구의 범위에 속하는 것으로 보아야 할 것이다.In addition, preferred embodiments of the present invention described above are disclosed for the purpose of illustration, and those skilled in the art will be able to make various modifications, changes, additions, etc. within the spirit and scope of the present invention, such modifications, modifications and the like are within the scope of the claims It should be seen as belonging.
Claims (4)
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| KR1020000086092A KR20020056689A (en) | 2000-12-29 | 2000-12-29 | Super high transmittance color filter structure |
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| KR1020000086092A KR20020056689A (en) | 2000-12-29 | 2000-12-29 | Super high transmittance color filter structure |
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| KR101288835B1 (en) * | 2005-12-27 | 2013-08-07 | 엘지디스플레이 주식회사 | Liquid crystal display device and fabrication method thereof |
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