KR20020027693A - Method of forming metal contact - Google Patents

Method of forming metal contact Download PDF

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Publication number
KR20020027693A
KR20020027693A KR1020000058268A KR20000058268A KR20020027693A KR 20020027693 A KR20020027693 A KR 20020027693A KR 1020000058268 A KR1020000058268 A KR 1020000058268A KR 20000058268 A KR20000058268 A KR 20000058268A KR 20020027693 A KR20020027693 A KR 20020027693A
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South Korea
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titanium
gas
forming
contact
deposited
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KR1020000058268A
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Korean (ko)
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김진하
김남수
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박종섭
주식회사 하이닉스반도체
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Priority to KR1020000058268A priority Critical patent/KR20020027693A/en
Publication of KR20020027693A publication Critical patent/KR20020027693A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: A method for fabricating a metal contact is provided to prevent a fail of contact resistance, by increasing the deposition thickness of titanium nitride, by reducing the thickness of titanium by a thickness necessary for a silicide reaction and by injecting SiH4 gas before WF6 gas is injected so that WF6 gas reacts with SiH4 gas. CONSTITUTION: A contact hole is formed on a semiconductor substrate. Titanium(24) is deposited on the contact hole. Titanium nitride(25) is deposited on the titanium. SiH4 gas is injected before WF6 gas is injected, so that the WF6 gas is prevented from reacting with the titanium and tungsten(27) is deposited on the titanium nitride.

Description

메탈콘택의 형성 방법{METHOD OF FORMING METAL CONTACT}Method for forming metal contact {METHOD OF FORMING METAL CONTACT}

본 발명은 반도체소자의 제조 방법에 관한 것으로, 특히 콘택 프로파일 (Contact profile)과 콘택저항특성을 향상시키도록 한 메탈콘택의 형성 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for forming a metal contact to improve contact profile and contact resistance characteristics.

일반적으로 메탈콘택 형성시 텅스텐(W)을 이용하는 경우, 텅스텐과 P형 활성층의 오믹(Ohmic) 접촉저항을 형성하기 위하여 콘택홀을 형성한 후 높은 도즈량의 P형 이온, 예컨대 B11을 주입하여 열공정을 거친후 활성화시킨다. 그리고 배리어메탈(Barrier metal)로 Ti/TiN을 사용한다.In general, when tungsten (W) is used to form a metal contact, a contact hole is formed to form ohmic contact resistance between the tungsten and the P-type active layer, and then a high dose of P-type ions such as B11 is injected to form heat. Activate after going through the process. In addition, Ti / TiN is used as a barrier metal.

도 1은 종래기술에 따른 메탈콘택의 형성 방법을 도시한 도면으로서, Ti/TiN과 텅스텐의 적층구조로 이루어진다.1 is a view showing a method of forming a metal contact according to the prior art, consisting of a laminated structure of Ti / TiN and tungsten.

즉, 불순물접합층(12)이 형성된 반도체기판(11)상에 층간절연막(13)을 형성한 후, 상기 층간절연막(13)을 선택적으로 패터닝하여 상기 불순물접합층(12)이 노출되는 콘택홀을 형성한다.That is, after the interlayer insulating film 13 is formed on the semiconductor substrate 11 on which the impurity bonding layer 12 is formed, the interlayer insulating film 13 is selectively patterned so that the contact hole exposing the impurity bonding layer 12 is exposed. To form.

이어서, 상기 콘택홀을 포함한 층간절연막(13)상에 배리어메탈로서 Ti/TiN(14)을 형성한 후, 상기 Ti/TiN(14)상에 텅스텐(W)을 증착한다.Subsequently, after forming Ti / TiN 14 as a barrier metal on the interlayer insulating film 13 including the contact hole, tungsten (W) is deposited on the Ti / TiN 14.

상기한 텅스텐(W)증착시, 초기 핵생성 단계는 다음 반응식과 같다.When the above tungsten (W) deposition, the initial nucleation step is shown in the following reaction formula.

2WF6+ 3SiH4-->2W + 6H2+ 3SiF4 2WF 6 + 3SiH 4- > 2W + 6H 2 + 3SiF 4

상기 반응식1과 같이 SiH4가스가 주입되면서 반응이 일어나며 그 후에 수소를 넣고 반응하는 증착지속 단계는 다음 반응식과 같다.The reaction takes place as the SiH 4 gas is injected as in Scheme 1, and then the deposition sustaining step in which hydrogen is added is shown in the following scheme.

WF6+ 3H2-->W + 6HFWF 6 + 3H 2- > W + 6HF

상기 반응식1,2에서 반응식1은 반응속도가 가장 빠른 반응으로서 초기 핵생성을 위한 반응단계로 사용하는 과정이며, 반응식2는 반응속도가 반응식1에 비하여 작아 반응속도를 조절하기가 쉬워 증착을 지속하는 단계에 사용한다.In the reaction schemes 1 and 2, the reaction scheme 1 is the fastest reaction rate and is used as a reaction step for initial nucleation, and the reaction scheme 2 is smaller than the reaction scheme 1 so that it is easy to control the reaction rate so that deposition is continued. It is used to step.

한편, 증착소스가스인 WF6가스와 반응성이 좋은 물질은 SiH4〉Si 〉Ti 〉H2〉TiN 순이다.On the other hand, materials that are highly reactive with the WF 6 gas, which is a deposition source gas, are in the order of SiH 4 >Si>Ti> H 2 > TiN.

상기와 같은 반응식1,2에 의해 텅스텐이 화산 또는 버섯형태로 형성되는 티타늄 어택이 발생하는데, 초기 단계의 WF6와 SiH4가 반응할 때 SiH4가스량이 부족하거나 WF6가스의 주입이 SiH4가스보다 먼저 일어나 실리콘(Si)이나 티타늄(Ti)과 반응하는 경우 WxSiy나 TiF3를 형성하게 된다.Titanium attack in which tungsten is formed in a volcanic or mushroom form is generated by the reaction schemes 1 and 2 described above. When the initial reaction of WF 6 and SiH 4 occurs, the amount of SiH 4 gas is insufficient or the injection of WF 6 gas is caused by SiH 4. When it rises before gas and reacts with silicon (Si) or titanium (Ti), it forms W x Si y or TiF 3 .

이러한 반응부산물이 형성되는 경우에 대해 설명하면, 콘택홀 형성후 배리어메탈 물질로 Ti/TiN을 스퍼터링(Sputtering)한 후 메탈레이어로 텅스텐을 화학기상증착법(Chemical Vapor Deposition; CVD)으로 증착한다.In the case of forming the reaction by-products, after forming the contact hole, sputtering Ti / TiN with a barrier metal material and depositing tungsten with a chemical vapor deposition method (CVD) using a metal layer.

이 때, 티타늄(Ti)이 일정하게 증착되지 못한 경우나 또는 콘택 프로파일로 인하여 티타늄 단차피복성(Step coverage)이 불량하여 TiN이 Ti와 W를 분리하는 역할을 하지 못하여 WF6와 Ti가 반응하여 TiF3를 형성한다. 그리고, TiN이 배리어의 역할을 충분히 하지 못하는 경우에 텅스텐을 화학기상증착하면서 생성되는 불소(F) 이온과 티타늄(Ti)이 반응하여 TiF3를 형성하여 오믹접촉저항의 페일을 유발한다.At this time, when Ti is not deposited uniformly or due to the contact profile, the titanium step coverage is poor, and TiN does not play a role in separating Ti and W. Thus, WF 6 and Ti react. To form TiF 3 . In addition, when TiN does not sufficiently serve as a barrier, fluorine (F) ions produced by chemical vapor deposition and titanium (Ti) react to form TiF 3 to cause a failure of ohmic contact resistance.

또한, TiF3가 형성되면 콘택홀에서 TiN이 티타늄(Ti)과 떨어져 말려올라가게 됨에 따라 텅스텐이 화산(Volcano) 또는 버섯(Mushroom)모양의 결함이 발생되는데, 이를 티타늄 어택(Ti attack)이라 하며 이는 접촉저항의 전기적인 불량이나 마이크로스코프(Microscope)에서 발견된다.In addition, when TiF 3 is formed, tungsten is dried away from titanium in the contact hole, and thus tungsten (Volcano) or mushroom (Mushroom) -like defects are generated. This is called a titanium attack. This is found in the electrical failure of contact resistance or in the microscope.

최근에는 콘택홀 식각시 필드산화막이 커팅(Cutting)되어 불량한 콘택프로파일을 형성하게 되고 이로 인하여 물리적기상증착법(Physical Vapor Deposition; PVD)으로 증착되는 TiN이 불규칙 또는 부적절하게 증착되어 TiF3가 형성될 수 있는 기회를 제공하는 문제점이 있다.Recently, when the contact hole is etched, the field oxide film is cut to form a poor contact profile. As a result, TiN deposited by physical vapor deposition (PVD) may be irregularly or improperly deposited to form TiF 3. There is a problem that provides an opportunity.

본 발명은 상기 종래기술의 문제점을 해결하기 위해 안출한 것으로서, 콘택형성시 오믹접촉저항의 페일의 원인이 되는 티타늄 어택을 방지하는데 적합한 메탈콘택의 형성 방법을 제공함에 그 목적이 있다.The present invention has been made to solve the problems of the prior art, an object of the present invention is to provide a method for forming a metal contact suitable for preventing a titanium attack that causes a failure of ohmic contact resistance when forming a contact.

도 1은 종래기술에 따른 메탈콘택의 형성 방법을 간략히 도시한 도면,1 is a view briefly showing a method of forming a metal contact according to the prior art,

도 2는 본 발명의 실시예에 따른 메탈콘택의 형성 방법을 도시한 공정 흐름도,2 is a process flow diagram illustrating a method of forming a metal contact according to an embodiment of the present invention;

도 3a 내디 도 3b는 도 2에 따른 메탈콘택의 형성 방법을 도시한 단면도.3A and 3B are cross-sectional views illustrating a method of forming a metal contact according to FIG. 2.

도 4는 본 발명의 실시예에 따른 SiH4가스의 유량 증가에 따른 페일률 감소를 도시한 그래프.Figure 4 is a graph showing the fail rate decrease with increasing the flow rate of SiH 4 gas according to an embodiment of the present invention.

*도면의 주요 부분에 대한 부호의 설명* Explanation of symbols for the main parts of the drawings

21 : 반도체기판 22 : P형 불순물접합층21 semiconductor substrate 22 P-type impurity bonding layer

23 : 층간절연막 24 : 티타늄23: interlayer insulating film 24: titanium

25 : 티타늄나이트라이드 26 : 티타늄실리사이드25: titanium nitride 26: titanium silicide

27 : 텅스텐27: tungsten

상기의 목적을 달성하기 위한 본 발명의 메탈콘택의 형성 방법은 소정공정이 완료된 반도체기판상에 콘택홀을 형성하는 단계; 상기 콘택홀상에 티타늄을 증착하는 단계; 상기 티타늄상에 티타늄나이트라이드를 증착하는 단계; 및 WF6가스보다 SiH4가스를 먼저 주입하여 상기 WF6가스가 상기 티타늄과 반응하는 것을 방지하면서 상기 티타늄나이트라이드상에 텅스텐을 증착하는 단계를 포함하여 이루어짐을 특징으로 한다.Method of forming a metal contact of the present invention for achieving the above object comprises the steps of forming a contact hole on a semiconductor substrate is completed a predetermined process; Depositing titanium on the contact hole; Depositing titanium nitride on the titanium; And characterized by yirueojim including the step of depositing tungsten on said titanium nitride fluoride by first injecting the SiH 4 gas than the WF 6 gas, while preventing the WF 6 gas is reacted with the titanium.

이하, 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자가 본 발명의 기술적 사상을 용이하게 실시할 수 있을 정도로 상세히 설명하기 위하여, 본 발명의 가장 바람직한 실시예를 첨부 도면을 참조하여 설명하기로 한다.Hereinafter, the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the technical idea of the present invention. .

도 2는 본 발명의 실시예에 따른 메탈콘택의 형성 방법을 도시한 공정 흐름도이고 도 3a 내지 도 3b는 도 2에 따른 메탈콘택의 형성 방법을 도시한 단면도이다.2 is a process flowchart illustrating a method of forming a metal contact according to an embodiment of the present invention, and FIGS. 3A to 3B are cross-sectional views illustrating a method of forming a metal contact according to FIG. 2.

본 발명의 실시예에서는 배리어메탈 예컨대, TiN의 결함으로 인하여 텅스텐 증착시 WF6와 Ti가 반응하여 저항이 큰 TiF3물질이 생성되지 않도록 하는 방법을 제시한다.According to an embodiment of the present invention, a method of preventing a TiF 3 material having a high resistance due to the reaction of WF 6 and Ti during tungsten deposition due to a defect of a barrier metal such as TiN is provided.

도 2, 도 3a 내지 도 3b를 참조하여 설명하면, 먼저 P형 불순물 접합층(22)이 형성된 반도체기판(21)상에 층간절연막(23)을 형성한 후, 상기 층간절연막(23)을 선택적으로 패터닝하여 상기 P형 불순물 접합층(22)이 노출되는 콘택홀을 형성한다.Referring to FIGS. 2 and 3A to 3B, an interlayer insulating film 23 is first formed on a semiconductor substrate 21 on which a P-type impurity junction layer 22 is formed, and then the interlayer insulating film 23 is selectively selected. Patterning to form a contact hole through which the P-type impurity bonding layer 22 is exposed.

이어서, 상기 콘택홀을 포함한 층간절연막(23)상에 배리어메탈로서 티타늄 (24)을 증착하는데, 이 때, 상기 티타늄(24)은 후속 실리사이드공정시 모두 소모되도록 150Å∼200Å의 두께로 증착한다.Subsequently, titanium 24 is deposited as a barrier metal on the interlayer insulating film 23 including the contact hole, in which the titanium 24 is deposited to a thickness of 150 k? To 200 k? So as to be consumed during the subsequent silicide process.

이어서, 상기 티타늄(24)상에 배리어메탈로서 티타늄나이트라이드(25)를 증착하는데, 이 때, 상기 티타늄나이트라이드(25)는 배리어메탈의 역할을 충분히 할 수 있도록 800Å∼1500Å의 두께로 증착한다. 또한, 상기 티타늄나이트라이드(25)시 증착시 콘택홀 부분에 균일하게 증착하도록 콜리미네이터 스퍼터링 (Collimenator sputtering)법을 이용한다.Subsequently, titanium nitride 25 is deposited on the titanium 24 as a barrier metal. At this time, the titanium nitride 25 is deposited to a thickness of 800 kW to 1500 kW so as to sufficiently serve as a barrier metal. . In addition, a collimator sputtering method is used to uniformly deposit the contact hole portions during the titanium nitride 25 deposition.

이어서, 상기 배리어메탈인 티타늄(24)과 티타늄나이트라이드(25)의 적층구조를 열처리하여 상기 티타늄(24)이 반도체기판(21)의 실리콘과 실리사이드반응하도록 하여 티타늄실리사이드(TiSi)(26)를 형성한다. 이는 티타늄(24)이 후속 텅스텐증착시 WF6와 반응하지 못하도록 하기 위함이다.Subsequently, the layered structure of the titanium metal 24 and the titanium nitride 25 is heat-treated to allow the titanium 24 to silicide react with silicon of the semiconductor substrate 21 to form titanium silicide (TiSi) 26. Form. This is to prevent titanium 24 from reacting with WF 6 during subsequent tungsten deposition.

이어서, 상기 티타늄나이트라이드(25)상에 텅스텐(27)을 증착하는데, 이 때, 증착소스가스인 WF6보다 먼저 SiH4가스를 30sccm∼35sccm의 유량으로 주입하여 WF6이 티타늄나이트라이드(25)의 티타늄과 반응하기전에 SiH4가스와 반응하도록 미리 분위기를 증착장치내에 조성한다.Subsequently, tungsten 27 is deposited on the titanium nitride 25. At this time, SiH 4 gas is injected at a flow rate of 30 sccm to 35 sccm prior to the deposition source gas WF 6 so that the WF 6 titanium nitride (25 The atmosphere is prepared in advance in the deposition apparatus to react with SiH 4 gas before reacting with titanium.

도 4은 SiH4가스량을 30sccm∼35sccm으로 증가시킨 경우, 페일 발생률이 감소함을 도시하고 있다. 즉, WF6와 SiH4가스비가 반응하기 좋은 최적의 조건으로 만들어 주는 것으로 종래에는 SiH4가스양을 25sccm으로 진행하였으나 본 발명에서는 30sccm∼35sccm으로 진행하므로써, SiH4가스양이 증가하면서 WF6가 불안정한 TiN을 뚫고 티타늄과 반응할 수 있는 확률을 줄인다.FIG. 4 shows that the failure rate decreases when the SiH 4 gas amount is increased to 30 sccm to 35 sccm. That is, WF 6 and SiH 4 gas ratio, but the progress of SiH 4 gaseuyang Conventionally, as to 25sccm to make a good optimum conditions for the reaction proceeds to 30sccm~35sccm By the present invention, while SiH 4 gaseuyang increases the WF 6 labile TiN To reduce the chance of reacting with titanium.

상술한 바와 같이, 본 발명의 실시예에서는 메탈콘택과 불순물접합층의 콘택저항을 감소시키기 위해, 첫 번째 방법으로 배리어메탈인 티타늄나이트라이드의 증착두께를 증가시키고, 두 번째 방법으로 티타늄실리사이드를 형성하며, 세 번째 방법으로 WF6이 티타늄과 반응하기전에 WF6와 반응성이 더 큰 SiH4가스를 주입한다.As described above, in the embodiment of the present invention, in order to reduce the contact resistance of the metal contact and the impurity bonding layer, the deposition thickness of titanium nitride, which is a barrier metal, is increased by the first method, and the titanium silicide is formed by the second method. and, the third method WF 6 is injected into the WF 6 and SiH 4 larger reactive gas prior to reaction with the titanium.

상술한 실시예에서는 상기 세 가지 방법을 모두 적용하였으나, 상기 방법들을 각각 적용해도 콘택저항을 감소시킬 수 있다.In the above-described embodiment, all three methods are applied, but the contact resistance can be reduced by applying the methods.

본 발명의 기술 사상은 상기 바람직한 실시예에 따라 구체적으로 기술되었으나, 상기한 실시예는 그 설명을 위한 것이며 그 제한을 위한 것이 아님을 주의하여야 한다. 또한, 본 발명의 기술 분야의 통상의 전문가라면 본 발명의 기술 사상의 범위 내에서 다양한 실시예가 가능함을 이해할 수 있을 것이다.Although the technical idea of the present invention has been described in detail according to the above preferred embodiment, it should be noted that the above-described embodiment is for the purpose of description and not of limitation. In addition, those skilled in the art will understand that various embodiments are possible within the scope of the technical idea of the present invention.

상술한 바와 같은 본 발명의 메탈콘택의 형성 방법은 티타늄나이트라이드의증착두께를 증가시키고, 실리사이드반응에 필요한 두께만큼 티타늄의 두께를 감소시키며 텅스텐 증착시 WF6가스보다 먼저 SiH4가스를 주입하여 WF6가스가 배리어메탈의 Ti와 반응하기전에 SiH4가스와 반응하도록 하므로써, 티타늄이 텅스텐증착시 노출되더라도 TiF3의 반응부산물을 억제하여 콘택접촉저항의 페일을 방지할 수 있는 효과가 있다.As described above, the method for forming a metal contact of the present invention increases the deposition thickness of titanium nitride, reduces the thickness of titanium by the thickness required for the silicide reaction, and injects SiH 4 gas prior to WF 6 gas during tungsten deposition to inject WF. By allowing the 6 gas to react with the SiH 4 gas before reacting with Ti of the barrier metal, even if titanium is exposed during tungsten deposition, the reaction by-product of TiF 3 can be suppressed to prevent the contact contact resistance from failing.

Claims (8)

반도체소자의 콘택 형성 방법에 있어서,In the contact forming method of a semiconductor device, 소정공정이 완료된 반도체기판상에 콘택홀을 형성하는 단계;Forming a contact hole on the semiconductor substrate where the predetermined process is completed; 상기 콘택홀상에 티타늄을 증착하는 단계;Depositing titanium on the contact hole; 상기 티타늄상에 티타늄나이트라이드를 증착하는 단계; 및Depositing titanium nitride on the titanium; And WF6가스보다 SiH4가스를 먼저 주입하여 상기 WF6가스가 상기 티타늄과 반응하는 것을 방지하면서 상기 티타늄나이트라이드상에 텅스텐을 증착하는 단계By first injecting the SiH 4 gas than the WF 6 gas and the WF 6 gas is prevented in that the reaction of titanium and depositing a tungsten nitride on the titanium nitride 를 포함하여 이루어짐을 특징으로 하는 메탈콘택의 형성 방법.Forming method of a metal contact, characterized in that comprises a. 제 1 항에 있어서,The method of claim 1, 상기 티타늄나이트라이드 증착후, 열공정을 실시하여 상기 반도체기판과 티타늄의 계면에 티타늄실리사이드를 형성하는 단계를 더 포함하는 것을 특징으로 하는 메탈콘택의 형성 방법.And depositing titanium nitride at the interface between the semiconductor substrate and titanium by performing a thermal process after the titanium nitride is deposited. 제 1 항에 있어서,The method of claim 1, 상기 티타늄은 150Å∼200Å의 두께로 증착되는 것을 특징으로 하는 메탈콘택의 형성 방법.The titanium is a method of forming a metal contact, characterized in that deposited to a thickness of 150 ~ 200Å. 제 1 항에 있어서,The method of claim 1, 상기 티타늄나이트라이드는 800Å∼1500Å의 두께로 증착되는 것을 특징으로 하는 메탈콘택의 형성 방법.The titanium nitride is a metal contact forming method, characterized in that deposited to a thickness of 800 ~ 1500Å. 제 1 항에 있어서,The method of claim 1, 상기 SiH4가스는 30sccm∼35sccm의 유량으로 주입되는 것을 특징으로 하는 메탈콘택의 형성 방법.The SiH 4 gas is a metal contact forming method, characterized in that injected at a flow rate of 30sccm ~ 35sccm. 반도체소자의 콘택 형성 방법에 있어서,In the contact forming method of a semiconductor device, 소정공정이 완료된 반도체기판상에 콘택홀을 형성하는 단계;Forming a contact hole on the semiconductor substrate where the predetermined process is completed; 상기 콘택홀상에 티타늄을 증착하는 단계;Depositing titanium on the contact hole; 상기 티타늄상에 티타늄나이트라이드를 증착하는 단계;Depositing titanium nitride on the titanium; 후속 텅스텐 증착가스인 WF6가스와 상기 티타늄과의 반응을 방지하기 위해 상기 반도체기판의 표면에 티타늄실리사이드를 형성하는 단계; 및Forming titanium silicide on the surface of the semiconductor substrate to prevent a reaction between the titanium oxide and WF 6 gas, which is a subsequent tungsten deposition gas; And WF6가스보다 SiH4가스를 먼저 주입하여 상기 WF6가스가 상기 티타늄과 반응하는 것을 방지하면서 상기 티타늄나이트라이드상에 텅스텐을 증착하는 단계By first injecting the SiH 4 gas than the WF 6 gas and the WF 6 gas is prevented in that the reaction of titanium and depositing a tungsten nitride on the titanium nitride 를 포함하여 이루어짐을 특징으로 하는 메탈콘택의 형성 방법.Forming method of a metal contact, characterized in that comprises a. 제 6 항에 있어서,The method of claim 6, 상기 티타늄실리사이드 형성시, 상기 반도체기판 표면에는 상기 티타늄실리사이드만이 형성되는 것을 특징으로 하는 메탈콘택의 형성 방법.When the titanium silicide is formed, only the titanium silicide is formed on the surface of the semiconductor substrate. 제 6 항에 있어서,The method of claim 6, 상기 티타늄은 150Å∼200Å의 두께로 증착되는 것을 특징으로 하는 메탈콘택의 형성 방법.The titanium is a method of forming a metal contact, characterized in that deposited to a thickness of 150 ~ 200Å.
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