KR20020010474A - Apparatus for controlling chemical fiux in a wafer cleaning system and the method thereof - Google Patents
Apparatus for controlling chemical fiux in a wafer cleaning system and the method thereof Download PDFInfo
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- KR20020010474A KR20020010474A KR1020010033199A KR20010033199A KR20020010474A KR 20020010474 A KR20020010474 A KR 20020010474A KR 1020010033199 A KR1020010033199 A KR 1020010033199A KR 20010033199 A KR20010033199 A KR 20010033199A KR 20020010474 A KR20020010474 A KR 20020010474A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
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Abstract
Description
본 발명은 웨이퍼 세정장비의 화학약품 유량제어 장치 및 방법에 관한 것으로, 보다 상세하게는 웨이퍼를 세정시키기 위한 화학약품을 정량탱크에 저장하지 않고서도 화학약품의 유량을 정량적으로 제어할 수 있도록 한 웨이퍼 세정장비의 화학약품 유량제어 장치 및 방법에 관한 것이다.The present invention relates to an apparatus and a method for controlling chemical flow rate of a wafer cleaning apparatus, and more particularly, a wafer capable of quantitatively controlling a chemical flow rate without storing a chemical for cleaning the wafer in a quantitative tank. A chemical flow control apparatus and method for cleaning equipment.
일반적으로, 반도체 초미세 회로가공 웨이퍼(Wafer)의 오염 및 미세먼지(Paticle)를 제거하기 위해 화학약품의 화학작용을 이용하여 웨이퍼를 세정시키는 세정공정이 필요하다.In general, there is a need for a cleaning process for cleaning wafers using chemical reactions of chemicals in order to remove contamination and fine dust of semiconductor ultrafine circuit wafers.
세정시에 화학약품은 통상적으로 한 가지 이상의 화학약품을 혼합시켜 사용하므로, 정량탱크에 각 화학약품의 일정량을 각각 담아 두었다가 필요한 시기에 화학약품을 각각 공급하여 일정한 농도가 되도록 화학약품을 혼합한 다음 세정공정(Process Bath)을 수행한다.In cleaning, chemicals are usually mixed with one or more chemicals, so each fixed amount of chemicals is stored in a fixed-quantity tank, and each chemical is supplied at the required time to mix the chemicals to a certain concentration. Perform a process bath.
도 1은 종래의 통상적인 웨이퍼 세정장비의 화학약품 유량제어 장치를 나타낸 도면이다.1 is a view showing a chemical flow rate control apparatus of a conventional wafer cleaning equipment.
동도면을 참조하면 알 수 있듯이, 초기에 배출밸브(123)가 개방되어 내부베쓰(In Bath, 140)와 외부베쓰(Out Bath, 150)에 잔존하는 화학약품(H₂SO₄,H₂O₂혼합액)이 드래인부(124)를 통해 외부로 배출되는 동시에, 시수밸브(119)가 개방되어 시수(City Water)와 함께 화학약품은 외부로 배출된다.As can be seen from the drawing, the discharge valve 123 is opened initially, and the chemicals (H₂SO₄, H₂O₂ mixture) remaining in the inner bath (In Bath 140) and the outer bath (150) are drained. At the same time it is discharged to the outside through the 124, the time water valve 119 is opened and the chemical along with the city water (City Water) is discharged to the outside.
이때, 내부베쓰(140) 내에 설치된 레벨센서(142)와 외부베쓰(150) 내에 설치된 레벨센서(152)를 통해 각 베쓰(140,150) 내에 잔존하는 화학약품이 모두 배출된 것으로 감지되면, 배출밸브(123)와 시수밸브(119)가 폐쇄되어 외부로 배출되는 화학약품이 차단된다.At this time, when it is detected that all chemicals remaining in each of the baths 140 and 150 are discharged through the level sensor 142 installed in the inner bath 140 and the level sensor 152 installed in the outer bath 150, the discharge valve ( 123 and the water valve 119 is closed to shut off the chemical discharged to the outside.
각 베쓰(140,150)로부터 화학약품이 배출되는 동안, 인입밸브(111,112)가 개방되어 제1정량탱크(100)와 제2정량탱크(130)로 화학약품(H₂SO₄,H₂O₂)이 각각 공급되고, 제1정량탱크(100)와 제2정량탱크(130) 내에 설치된 각 레벨센서 (102,132)를 통해 미리 설정된 정량이 공급된 것으로 감지되면, 상기 인입밸브 (111,112)가 폐쇄되어 제1 및 제2정량탱크(100,130)로 공급되는 각 화학약품(H₂SO₄,H₂O₂)이 차단된다.While the chemicals are discharged from the baths 140 and 150, the inlet valves 111 and 112 are opened to supply the chemicals H₂SO₂ and H₂O₂ to the first and second metering tanks 100 and 130, respectively. When it is detected that a predetermined quantity is supplied through each of the level sensors 102 and 132 installed in the first weighing tank 100 and the second weighing tank 130, the inlet valves 111 and 112 are closed to close the first and second weighing tanks. Each chemical (H₂SO₄, H₂O₂) supplied to (100,130) is blocked.
그 다음, 공급밸브(113, 114)가 개방되어 제1 및 제2정량탱크(100,130)에 공급된 화학약품(H₂SO₄,H₂O₂)의 정량이 내부베쓰(140)로 유입되어 화학약품은 혼합되고, 내부베쓰(140)를 통해 혼합된 화학약품이 오버플로우(Overflow)되어 외부베쓰(150)로 유입된다.Then, the supply valves 113 and 114 are opened to quantify the chemicals (H₂SO₄, H₂O₂) supplied to the first and second metering tanks (100, 130) into the internal bath 140, and the chemicals are mixed. The chemicals mixed through the inner bath 140 overflow and flow into the outer bath 150.
내부베쓰(140)와 외부베쓰(150) 내의 각 레벨센서(142,152)를 통해 미리 설정된 용량의 화학약품이 공급된 것으로 감지되면, 공급밸브(113,114)가 폐쇄되어 내부베쓰(140)와 외부베쓰(150)로 공급되던 화학약품이 차단된다.When it is detected that chemicals of a predetermined capacity are supplied through the level sensors 142 and 152 in the inner bath 140 and the outer bath 150, the supply valves 113 and 114 are closed to close the inner bath 140 and the outer bath ( The chemical supplied to 150 is blocked.
다음에, 다시 인입밸브(111, 112)가 개방되어 제1정량탱크(100)와 제2정량탱크(130)로 화학약품(H₂SO₄,H₂O₂)이 공급되어 정량으로 보관되는데, 이는 액교환시나 보충공급시에 사용된다.Next, the inlet valves 111 and 112 are opened again to supply the chemicals (H₂SO₄, H₂O₂) to the first and second metering tanks 100 and 130, which are stored in a fixed quantity. Used at the time of supply.
위와 같이 내부베쓰(140)에 공급된 화학약품 내로 웨이퍼 카세트 또는 보오트(6)에 웨이퍼가 실려 안치되고, 화학약품의 화학작용에 의해 웨이퍼에 있는 미세먼지나 오염원이 세정된다.As described above, the wafer is placed in the wafer cassette or the boat 6 into the chemical supplied to the internal bath 140, and the fine dust or contaminants on the wafer are cleaned by the chemical action of the chemical.
웨이퍼의 세정중에 화학약품이 웨이퍼에 묻어나가거나 자연증발되므로써 화학약품이 줄어들게 되는데, 이때에는 보충펌프(115,117)가 동작되어 보충밸브 (115,117)를 통해 화학약품이 외부베쓰(150)로 보충공급된다.During cleaning of the wafer, the chemicals are reduced by buried or spontaneous evaporation of the chemicals. At this time, the supplemental pumps 115 and 117 are operated to supply the chemicals to the external bath 150 through the supplementary valves 115 and 117.
상기 외부베쓰(150) 내의 화학약품은 순환펌프(120)에 의해 히터(121)와 필터(122)를 통해 내부베쓰(140)로 재공급되고, 내부베쓰(140)로 공급된 화학약품은 외부베쓰(150)로 오버플로우되어 공급되므로써, 웨이퍼 세정시에 화학약품은 계속적으로 순환된다.The chemical in the external bath 150 is supplied back to the internal bath 140 through the heater 121 and the filter 122 by the circulation pump 120, the chemical supplied to the internal bath 140 is external By overflowing and supplying to the bath 150, the chemical is continuously circulated during wafer cleaning.
화학약품의 순환시에, 외부베쓰(150)로부터 내부베쓰(140)로 공급되는 화학약품은 히터(121)에 의해 그 온도가 설정된 온도로 유지되어 공급됨과 동시에, 필터(122)에 의해 화학약품의 불순불이 제거되어 내부베쓰(140)로 공급된다.At the time of circulation of the chemicals, the chemicals supplied from the external bath 150 to the internal bath 140 are supplied with the temperature maintained by the heater 121 at the set temperature and by the filter 122. Impurity is removed and supplied to the inner bath 140.
웨이퍼의 세정 중에 미리 설정된 화학약품의 사용가능한 시간 또는 사용가능한 횟수를 만족하면 화학약품을 교환을 해야 하는데, 이러한 화학약품의 교환, 즉 액교환은 상술한 바와 같은 동작과정을 통해 이루어진다.If the available time or the number of times of use of the predetermined chemical is satisfied during the cleaning of the wafer, the chemicals should be replaced. The replacement of the chemicals, that is, the liquid exchange, is performed through the operation process as described above.
한편, 제1정량탱크(100)와 제2정량탱크(130) 내에서 각 정량탱크(100) 내의 레벨센서(102,132)의 고장 또는 오류로 인해 화학약품이 초과공급되는 경우를 방지하기 위해 배수관이 설치되어 있는데, 이 배수관은 설정된 정량레벨(A,B) 부위에 설치되어 화학약품(H₂SO₄,H₂O₂)이 초과공급되면 초과공급된 화학약품은 이 배수관을 거쳐 드레인부(124)를 통해 외부로 배출된다.On the other hand, the drain pipe in order to prevent the over-supply of chemicals due to the failure or error of the level sensors (102,132) in each of the metering tank 100 in the first metering tank (100) and the second metering tank (130) This drainage pipe is installed at the set quantity level (A, B), and when the chemicals (H₂SO₄, H₂O₂) are oversupplied, the oversupplied chemical is discharged to the outside through the drain part 124 through this drainage pipe. do.
그러나, 종래의 웨이퍼 세정장비의 화학약품 유량제어 장치는 각 화학약품의 정량을 측정하기 위해 각각의 정량탱크 및 레벨센서가 필요하며, 보충용 펌프와 각종 밸브가 필요하기 때문에, 이들을 제어하는 데에 복잡할 뿐만 아니라, 장비비용을 상승시키는 문제점이 있다.However, the chemical flow control apparatus of the conventional wafer cleaning equipment requires a respective metering tank and a level sensor to measure the quantity of each chemical, and a supplementary pump and various valves are required, which is complicated to control them. In addition, there is a problem of increasing the equipment cost.
또한, 정량탱크 내의 레벨센서가 고장 또는 오동작하여 화학약품이 초과공급되는 경우, 배수관을 통해 외부로 지속적으로 배출되기 때문에, 화학약품의 과다낭비를 초래할 수 있고, 화학약품의 외부누출로 인해 발생되는 화학약품가스 때문에 장비의 부식을 초래할 수 있는 문제점이 있다.In addition, if the level sensor in the metering tank malfunctions or malfunctions and the chemical is oversupplied, it is continuously discharged to the outside through the drain pipe, which may result in excessive waste of the chemical and is caused by the external leakage of the chemical. There is a problem that can cause corrosion of the equipment because of the chemical gas.
따라서, 본 발명은 상기와 같은 종래기술의 문제점들을 해결하기 위한 것으로, 내부 및 외부베쓰로 공급되는 화학약품을 직접 공급 또는 차단함으로써 화학약품의 유량을 정량적으로 공급할 수 있는 웨이퍼 세정장비의 화학약품 유량제어 장치를 제공하는 데에 그 목적이 있다.Accordingly, the present invention is to solve the problems of the prior art as described above, the chemical flow rate of the wafer cleaning equipment that can supply the quantitative flow rate of the chemical by directly supplying or blocking the chemical supplied to the internal and external baths The object is to provide a control device.
본 발명의 다른 목적은, 내부 및 외부베쓰로 공급되는 화학약품의 용량을 측정하여 측정된 화학약품의 용량에 따라 그 공급용량을 조절함으로써, 화학약품을 정량적으로 공급할 수 있는 세정장비의 화학약품 유량제어 방법을 제공하는 데에 있다.Another object of the present invention, by measuring the volume of the chemical supplied to the internal and external baths and adjusting the supply capacity according to the measured chemical capacity, the chemical flow rate of the cleaning equipment that can supply the chemical quantitatively To provide a control method.
도 1은 종래의 통상적인 웨이퍼 세정장비의 화학약품 유량제어 장치를 도시한 도면,1 is a view showing a chemical flow rate control device of a conventional wafer cleaning equipment,
도 2는 본 발명의 바람직한 실시예에 따른 웨이퍼 세정장비의 화학약품 유량제어 장치의 개략적인 블록구성도,2 is a schematic block diagram of a chemical flow rate control apparatus of a wafer cleaning apparatus according to a preferred embodiment of the present invention;
도 3은 도 2의 제어부의 제어에 따라 웨이퍼 세정장비에 화학약품을 정량적으로 제어하는 것을 설명하기 위한 도면,FIG. 3 is a diagram for quantitatively controlling chemicals in a wafer cleaning apparatus under the control of the controller of FIG. 2;
도 4는 본 발명에 따라 웨이퍼 세정장비의 화학약품의 유량을 제어하는 동작과정을 설명하기 위한 플로우챠트이다.Figure 4 is a flow chart for explaining the operation of controlling the flow rate of the chemical of the wafer cleaning apparatus according to the present invention.
<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>
210 : 입출력부 220 : 배출감지센서부210: input / output unit 220: exhaust detection sensor unit
231 : CPU 232 : 입력유닛231: CPU 232: input unit
233 : 출력유닛 234 : 고속카운터233: output unit 234: high speed counter
235 : 통신유닛 250 : 플로우센서부235 communication unit 250 flow sensor
241,243 : 인입밸브241,243: Inlet valve
상기 목적을 달성하기 위하여 본 발명에 따른 세정장비의 화학약품 유량제어 장치는, 내부 및 외부베쓰로 공급된 화학약품의 화학반응에 의해 웨이퍼를 세정하는 장비에 있어서, 초기값을 설정하고, 데이터베이스화된 자료를 출력시키기 위한 입출력수단과, 상기 내부 및 외부베쓰로 공급되는 화학약품의 공급양을 그에 상응하는 감지신호를 발생하는 공급량감지수단과, 상기 공급량감지수단을 통해 감지된 감지신호에 따라 화학약품의 공급량을 측정하는 공급량측정수단 및, 상기 공급량측정수단을 통해 측정된 공급량과 상기 입력수단을 통해 입력된 초기값에 따라 상기 내부 및 외부베쓰로 공급되는 화학약품의 공급을 제어하기 위한 제어수단으로 구성된다.In order to achieve the above object, a chemical flow rate control apparatus of a cleaning apparatus according to the present invention, in the equipment for cleaning the wafer by the chemical reaction of the chemical supplied to the internal and external bath, the initial value is set, the database Input / output means for outputting the collected data, supply amount sensing means for generating a sensing signal corresponding to the supply amount of chemicals supplied to the internal and external baths, and chemical according to the sensing signal sensed through the supply amount sensing means. Supply means for measuring the supply amount of the drug, and control means for controlling the supply of the chemical supplied to the internal and external baths according to the supply amount measured through the supply amount measuring means and the initial value input through the input means It consists of.
상기 목적을 달성하기 위하여 본 발명에 따른 웨이퍼 세정장비의 화학약품 유량제어 방법은, 내부 및 외부베쓰로 공급된 화학약품의 화학반응에 의해 웨이퍼를 세정하는 세정방법에 있어서, 입출력수단을 통해 상기 웨이퍼를 세정하기 위한 초기값을 입력하는 입력단계와, 상기 입력단계를 통해 입력된 초기값과 공급량감지수단 및 공급량측정수단을 통해 측정된 상기 화학약품의 공급량을 비교하는 공급량비교단계 및, 상기 공급량비교단계에서의 비교결과에 따라 상기 내부 및 외부베쓰로 공급되는 화학약품의 공급을 조절하는 공급조절단계로 이루어진 것을 특징으로 한다.In order to achieve the above object, a chemical flow rate control method of a wafer cleaning apparatus according to the present invention includes a cleaning method for cleaning a wafer by a chemical reaction of a chemical supplied to an internal and external bath, the wafer through an input / output means. An input step of inputting an initial value for cleaning the supply, a supply amount comparison step of comparing the initial value inputted through the input step with the supply amount of the chemical measured by the supply amount sensing means and the supply amount measuring means, and the supply amount comparison According to the comparison result in the step characterized in that the supply control step of adjusting the supply of the chemical supplied to the inner and outer bath.
이하 본 발명의 구성에 따른 실시예를 첨부된 도면을 참조하여 보다 상세하게 설명하기로 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도 2는 본 발명에 따른 웨이퍼 세정장비의 화학약품 유량제어 장치의 개략적인 블록구성도로서, 입출력부(210), 배출감지센서부(220), 제어부(230) 및 플로우센서부(250)로 구성된다.Figure 2 is a schematic block diagram of a chemical flow control device of the wafer cleaning apparatus according to the present invention, the input and output unit 210, the discharge sensor 220, the control unit 230 and the flow sensor 250 It is composed.
도 2에서, 입출력부(210)는 웨이퍼 세정장비의 초기값(예를 들면, 각 화학약품의 정량치, 보충시기 및 액교환시기 등)을 설정시키고, 데이터베이스화된 화학약품의 공급량 등의 자료를 출력할 뿐만 아니라, 세정장비의 이상동작시 이를 경보한다.In FIG. 2, the input / output unit 210 sets initial values of the wafer cleaning equipment (for example, quantitative value of each chemical, replenishment time, liquid exchange time, etc.), and provides data such as a database supply of chemicals. Not only outputs the alarm, but also warns of abnormal operation of the cleaning equipment.
그리고, 배출감지센서부(220)는 제1배출감지센서(221)와 제2배출감지센서 (222)로 구성되며 각 배출감지센서(221,222)는 내부 유량탱브(140)와 외부베쓰 (150)로부터 드레인부(124)를 통해 외부로 배출되는 화학약품의 유무를 각각 감지하여 그에 상응하는 감지신호를 제어부(230)로 제공한다.In addition, the discharge sensor 220 is composed of a first discharge sensor 221 and a second discharge sensor 222, each discharge sensor (221, 222) is an internal flow tank 140 and the external bath 150 Detecting the presence or absence of chemicals discharged from the outside through the drain unit 124 from each other and provides a corresponding detection signal to the controller 230.
제어부(230)는 CPU(231), 입력유닛(232), 출력유닛(233), 고속카운터(234) 및 통신유닛(235)로 구성되며, CPU(231)의 제어부(230)의 전반적인 제어를 위한 제어신호를 발생하고, 입력유닛(232)은 배출감지센서부(220)로부터 제공되는 감지신호를 입력받고, 출력유닛(233)은 CPU(231)로부터의 제어신호에 의해 인입밸브 (241,243)의 개폐제어신호를 발생한다. 또한, 고속카운터(244)는 후술될 플로우센서부(250)로부터 제공되는 펄스신호를 카운터하여 CPU(231)로 제공하고, 통신유닛 (235)은 입출력부(210)와 통신을 위한 것이다.The controller 230 includes a CPU 231, an input unit 232, an output unit 233, a high speed counter 234, and a communication unit 235, and controls overall control of the controller 230 of the CPU 231. Generates a control signal, and the input unit 232 receives the detection signal provided from the discharge detection sensor unit 220, and the output unit 233 receives the inlet valves 241 and 243 by the control signal from the CPU 231. Generates an open / close control signal. In addition, the high speed counter 244 counters the pulse signal provided from the flow sensor unit 250 to be described below and provides it to the CPU 231, and the communication unit 235 communicates with the input / output unit 210.
그리고, 플로우센서부(250)는 제1 및 제2플로우센서(251,252)로 구성되며 인입밸브(241,242)를 통해 공급되는 화학약품의 유속에 따른 펄스를 발생하여 제어부(230) 내의 고속카운터(234)로 제공한다.In addition, the flow sensor unit 250 includes first and second flow sensors 251 and 252, and generates a pulse according to the flow rate of the chemical supplied through the inlet valves 241 and 242, so that the high speed counter 234 in the controller 230 is used. To provide.
상기한 바와 같이 구성된 본 발명의 웨이퍼 세정장비의 화학약품 유량제어 장치 및 방법의 동작과정에 대하여 첨부된 도면을 참조하여 보다 상세하게 설명하기로 한다.The operation of the chemical flow control apparatus and method of the wafer cleaning apparatus of the present invention configured as described above will be described in more detail with reference to the accompanying drawings.
먼저, 사용자가 입출력부(210)를 통해 웨이퍼 세정장치의 초기값(예를 들면, 각 화학약품의 정량치, 보충시기 및 액교환시기 등)을 입력한다(단계 410).First, a user inputs an initial value (eg, a quantitative value of each chemical, a replenishment time, a liquid exchange time, etc.) of the wafer cleaning device through the input / output unit 210 (step 410).
그러면, 입출력부(210)를 통해 입력된 초기값에 따른 제어부(230)로부터의 제어신호에 의해 웨이퍼 세정장비가 동작된다.Then, the wafer cleaning equipment is operated by the control signal from the controller 230 according to the initial value input through the input / output unit 210.
상세하게는, 제어부(230) 내의 CPU(231)로부터의 제어신호에 의해 배출밸브 (123)와 시수밸브(247)가 개방되어 내부베쓰(140)와 외부베쓰(150)에 잔존하는 화학약품(H₂SO₄,H₂O₂혼합액)이 시수와 함께 드레인부(124)를 통해 외부로 배출된다(단계 412).Specifically, the discharge valve 123 and the time water valve 247 are opened by the control signal from the CPU 231 in the control unit 230 and the chemicals remaining in the internal bath 140 and the external bath 150 ( H₂SO₄, H₂O₂ mixture) is discharged to the outside through the drain portion 124 with the time water (step 412).
이때, 제1배출감지센서(221)와 제2배출감지센서(222)를 통해 외부로 배출되는 화학약품이 모두 배출된 것으로 감지되면(단계 414), 각 배출감지센서(221,222)로부터 그에 상응하는 감지신호가 제어부(230) 내의 입력유닛(232)으로 제공되고, 이 감지신호에 의해 CPU(231)는 외부로 배출되는 화학약품을 차단시키기 위한 제어신호를 발생한다.At this time, if it is detected that all of the chemicals discharged to the outside through the first discharge sensor 221 and the second discharge sensor 222 (step 414), the corresponding from the respective discharge detection sensors (221, 222) The detection signal is provided to the input unit 232 in the control unit 230, and by this detection signal CPU 231 generates a control signal for blocking the chemical discharged to the outside.
따라서, CPU(231)로부터의 차단 제어신호에 의해 배출밸브(123)와 시수밸브(247)가 차단되어 외부로 배출되는 화학약품이 차단된다(단계 416).Accordingly, the discharge valve 123 and the time water valve 247 are blocked by the shutoff control signal from the CPU 231, and the chemicals discharged to the outside are blocked (step 416).
그 다음, CPU(231)는 화학약품을 내부 및 외부베쓰(140,150)로 공급시키기 위한 제어신호를 발생하고, CPU(231)로부터의 제어신호에 의해 인입밸브(241,243)와 제1 및 제2플로우센서(251,252)와 공급밸브(242,244,245,246)가 개방되어, 화학약품이 인입밸브(241,243)와 플로우센서부(250) 및 공급밸브(242,244,245,246)를 거쳐 내부베쓰(140) 및 외부베쓰(150)로 공급된다(단계 418).Then, the CPU 231 generates a control signal for supplying chemicals to the internal and external baths 140 and 150, and the inlet valves 241 and 243 and the first and second flows are controlled by the control signal from the CPU 231. The sensors 251 and 252 and the supply valves 242, 244, 245 and 246 are opened, and chemicals are supplied to the internal bath 140 and the external bath 150 through the inlet valves 241 and 243, the flow sensor unit 250 and the supply valves 242, 244, 245 and 246. (Step 418).
각 베쓰(140,150)로 화학약품이 공급되는 중에, 플로우센서부(250)를 통해 화학약품의 유속에 따른 펄스가 고속카운터(234)로 제공되고, 고속카운터(234)를 통해 화학약품의 공급량이 측정되어 그 측정치가 CPU(231)로 제공되고(단계 420), CPU(231)는 고속카운터(234)로부터 제공되는 화학약품의 측정치를 이용하여 플로우센서부(250) 동작의 정상여부를 판단한다(단계 422).While the chemicals are supplied to the baths 140 and 150, pulses according to the flow rate of the chemicals are provided to the high speed counter 234 through the flow sensor unit 250, and the chemical supply amount is supplied through the high speed counter 234. The measured value is provided to the CPU 231 (step 420), and the CPU 231 determines whether the operation of the flow sensor unit 250 is normal by using the measured value of the chemical provided from the high speed counter 234. (Step 422).
상기 단계(422)에서의 판단결과, 플로우센서부(250)의 동작이 정상적이면 CPU(231)는 고속카운터(234)로부터 제공된 화학약품의 측정치와 입출력부(210)를 통해 설정된 공급량을 비교하여(단계 424), 측정치가 설정된 공급량에 미달되면 단계(418)로 되돌아가 화학약품을 계속적으로 공급하고, 측정치가 설정된 공급량에 도달되면 CPU(231)는 화학약품의 공급을 차단시키기 위한 제어신호를 발생한다.As a result of the determination in step 422, if the operation of the flow sensor 250 is normal, the CPU 231 compares the measured value of the chemical provided from the high speed counter 234 with the supply amount set through the input / output unit 210. (Step 424), when the measured value falls below the set supply amount, the flow returns to step 418 to continuously supply the chemicals, and when the measured value reaches the set supply amount, the CPU 231 sends a control signal to cut off the supply of the chemical. Occurs.
따라서, CPU(231)로부터의 제어신호에 의해 인입밸브(241,243)와 플로우센서부(250) 및 공급밸브(242,244,245,246)가 폐쇄되어 내부베쓰(140) 및 외부베쓰 (150)로 공급되는 화학약품이 차단된다(단계 426).Accordingly, the chemicals supplied to the internal bath 140 and the external bath 150 are closed by the inlet valves 241 and 243, the flow sensor unit 250, and the supply valves 242, 244, 245 and 246 due to control signals from the CPU 231. It is blocked (step 426).
이후, 외부베쓰(150)에 공급된 화학약품은 순환펌프(120)에 의해 히터(121)와 필터(122)를 통해 내부베쓰(140)로 재공급되고, 내부베쓰(140)로 공급된 화학약품이 오버플로우되어 외부베쓰(150)로 공급되므로써, 화학약품이 계속적으로 순환된다(단계 428).Thereafter, the chemical supplied to the external bath 150 is supplied back to the internal bath 140 through the heater 121 and the filter 122 by the circulation pump 120, and the chemical supplied to the internal bath 140. As the chemical overflows and is supplied to the external bath 150, the chemical is continuously circulated (step 428).
그 다음, 웨이퍼의 세정중에 화학약품이 웨이퍼에 묻어나가거나 자연증발되므로써 화학약품이 줄어들게 되는데, 입출력부(210)를 통해 입력된 보충공급시기가 되면 CPU(231)는 화학약품을 보충시키기 위한 제어신호를 발생하고, 이 제어신호에 의해 인입밸브(241,243), 플로우센서부(250) 및 공급밸브(245,246)가 개방되어 외부베쓰(150)로 화학약품이 공급됨으로써 화학약품이 보충공급된다(단계 430,432).Then, during cleaning of the wafer, chemicals are reduced by buried or spontaneous evaporation of the wafer, and when the replenishment supply time input through the input / output unit 210 is reached, the CPU 231 controls signals for replenishing the chemicals. And the inlet valves 241 and 243, the flow sensor unit 250 and the supply valves 245 and 246 are opened by this control signal, and the chemicals are supplied to the external bath 150 to supply the chemicals (steps 430 and 432). ).
화학약품이 보충공급되는 중에, CPU(231)는 고속카운터(234)를 통해 측정된 화학약품의 측정치와 입출력부(210)를 통해 설정된 보충용량을 비교하여(단계 434), 측정치가 설정된 보충용량에 미달되면 단계(432)로 되돌아가 화학약품의 보충공급이 계속되고, 측정치가 설정된 보충용량에 도달되면 CPU(231)로부터의 제어신호에 의해 인입밸브(241,243), 플로우센서부(250) 및 공급밸브(245,246)가 폐쇄되어 외부베쓰(150)로 보충공급되는 화학약품이 차단된다(단계 436).While the chemical is being replenished, the CPU 231 compares the measured value of the chemical measured through the high speed counter 234 with the replenishment capacity set through the input / output unit 210 (step 434), and the replenishment volume at which the measurement is set. If not, the flow returns to step 432, and the replenishment supply of the chemical is continued. When the measured value reaches the set replenishment capacity, the inlet valves 241 and 243, the flow sensor unit 250 and the control signal from the CPU 231 are returned. The supply valves 245 and 246 are closed to shut off chemicals supplied to the external bath 150 (step 436).
한편, 상기 단계(422)에서의 판단결과, 플로우센서부(250)의 동작이 정상이 아닌 경우, 즉 설정된 소정시간 동안의 화학약품 공급량이 과도하게 부족하거나 또는 과도하게 초과하는 경우, CPU(231)는 경보음을 발생시키기 위한 제어신호 및 화학약품의 공급을 차단시키기 위한 제어신호를 발생하고, CPU(231)로부터의 제어신호에 의해 입출력부(210)를 통해 플로우센서부(250)의 비정상상태가 청각적 또는 시각적으로 경보됨과 동시에(단계 438), CPU(231)부터의 제어신호에 의해 인입밸브(241,243) 및 공급밸브(242,244,245,246)가 폐쇄되어 내부베쓰(140) 및 외부베쓰(150)로 공급되는 화학약품이 차단된다(단계 440).On the other hand, if the determination result in the step 422, the operation of the flow sensor 250 is not normal, that is, if the chemical supply amount is excessively insufficient or excessively exceeds a predetermined time, the CPU 231 ) Generates a control signal for generating an alarm sound and a control signal for shutting off the supply of chemicals, and abnormality of the flow sensor unit 250 through the input / output unit 210 by the control signal from the CPU 231. At the same time as the state is audibly or visually alerted (step 438), the inlet valves 241 and 243 and the supply valves 242, 244, 245 and 246 are closed by the control signals from the CPU 231 so that the internal bath 140 and the external bath 150 are closed. The chemical supplied to is blocked (step 440).
다른 한편, 상기 단계(430)에서의 화학약품의 보충공급시기가 되지 않으면CPU(231)는 액교환시기인가를 판단하여(단계 442), 액교환시기가 아니면 단계(428)로 되돌아가 단계(430 내지 436)을 반복수행하고, 액교환시기이면 단계(412)로 되돌아가 상술한 모든 단계(412 내지 440)를 반복수행함으로써 화학약품의 액교환이 수행된다.On the other hand, if it is not the replenishment supply timing of the chemical in the step 430, the CPU 231 determines whether the liquid replacement time (step 442), and if it is not the liquid replacement time, the process returns to step 428 ( 430 to 436 are repeatedly performed, and when the liquid exchange time is reached, the process returns to step 412, and the liquid exchange of the chemical is performed by repeating all the above-described steps 412 to 440.
이후, 사용자가 입출력부(210)를 통해 자료출력을 요청하면, 통신유닛(235)를 통해 CPU(231)로 요청신호가 입력되고, CPU(231)로부터의 제어신호에 의해 데이터베이스화된 자료(상세하게는, 화학약품의 사용량, 비용 등의 자료)가 다시 통신유닛(235)를 통해 입출력부(270)로 제공되므로써, 입출력부(270)를 통해 자료가 출력된다.Subsequently, when the user requests data output through the input / output unit 210, the request signal is input to the CPU 231 through the communication unit 235, and the data ( In detail, data such as the amount of chemicals used, costs, etc.) are provided to the input / output unit 270 through the communication unit 235 again, and the data is output through the input / output unit 270.
상술한 바와 같이, 종래기술과 달리 본 발명은 화학약품의 정량을 측정하기 위해 정량탱크 등과 같은 여러 부속품 없이 플로우센서부(250)를 통해 각 베쓰(140,150)로 화학약품을 정량적으로 제공할 수 있다.As described above, unlike the prior art, the present invention can quantitatively provide chemicals to the baths 140 and 150 through the flow sensor unit 250 without various accessories such as a quantitative tank to measure the quantitative chemicals. .
따라서, 본 발명을 이용하면, 간단한 구성으로 화학약품을 정량적으로 공급할 수 있으므로, 그 제어가 간단할 뿐만 아니라 세정장비의 제작비용을 절감시킬 수 있고, 세정장비의 이상여부를 감지하여 그에 상응하는 대처를 할 수 있으며, 화학약품의 사용량을 데이터베이스화하여 관리함으로써, 화학약품의 사용량과 비용 등의 자료를 출력할 수 있는 효과가 있다.Therefore, by using the present invention, the chemical can be quantitatively supplied in a simple configuration, so that the control is simple and the manufacturing cost of the cleaning equipment can be reduced. It can be, by controlling the database of chemical usage, there is an effect that can output data such as chemical usage and cost.
한편 본 발명의 바람직한 실시예에 의거 설명하였으나, 당해 기술분야의 업자라면 본 발명의 사상과 기술적수단으로 부터 벗어나지 않는 범위 내에서 본 발명을 다양하게 수정 및 변경시킬 수 있음은 물론이다.On the other hand, although described based on the preferred embodiment of the present invention, those skilled in the art can be variously modified and changed within the scope of the invention without departing from the spirit and technical means of the present invention.
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| KR20030033609A (en) * | 2001-10-24 | 2003-05-01 | 동부전자 주식회사 | Chemical control system in a semiconductor manufacturing equipment |
| KR100625323B1 (en) * | 2005-08-23 | 2006-09-15 | 세메스 주식회사 | Semiconductor manufacturing equipment and control method for interlock in hunting |
| KR20160067408A (en) * | 2014-12-04 | 2016-06-14 | 주식회사 선반도체 | Apparatus for controlling chemical reactor |
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| KR102295545B1 (en) * | 2017-01-05 | 2021-08-30 | 에스케이실트론 주식회사 | Apparatus and method for wafer cleaning |
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| JP3074366B2 (en) * | 1993-02-22 | 2000-08-07 | 東京エレクトロン株式会社 | Processing equipment |
| JPH0945656A (en) * | 1995-07-28 | 1997-02-14 | Hitachi Ltd | Semiconductor manufacturing apparatus |
| KR970023610A (en) * | 1995-10-16 | 1997-05-30 | 김광호 | Supply device for chemical solution for semiconductor device manufacturing |
| KR200146296Y1 (en) * | 1996-02-27 | 1999-06-15 | 윤종용 | Chemical supply system of semiconductor equipments |
| KR19980022383A (en) * | 1996-09-21 | 1998-07-06 | 김광호 | Chemical Supply Device for Semiconductor Manufacturing |
| KR19980066452A (en) * | 1997-01-24 | 1998-10-15 | 김광호 | Wet scrubber |
| JP2000150447A (en) * | 1998-11-10 | 2000-05-30 | Nec Corp | Method and device for managing concentration of chemical and chemical processing device |
| KR200261175Y1 (en) * | 1998-12-30 | 2002-05-13 | 김광교 | Semiconductor Wafer Cleaning Liquid Supply Device |
| KR20000050397A (en) * | 1999-01-08 | 2000-08-05 | 윤종용 | Concentration controller of cleanning agent for semiconductor an the method thereof |
| JP2000286224A (en) * | 1999-03-30 | 2000-10-13 | Dainippon Screen Mfg Co Ltd | Substrate treating apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20030033609A (en) * | 2001-10-24 | 2003-05-01 | 동부전자 주식회사 | Chemical control system in a semiconductor manufacturing equipment |
| KR100625323B1 (en) * | 2005-08-23 | 2006-09-15 | 세메스 주식회사 | Semiconductor manufacturing equipment and control method for interlock in hunting |
| KR20160067408A (en) * | 2014-12-04 | 2016-06-14 | 주식회사 선반도체 | Apparatus for controlling chemical reactor |
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