KR20020001386A - Method for drying a wafer - Google Patents

Method for drying a wafer Download PDF

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Publication number
KR20020001386A
KR20020001386A KR1020000036062A KR20000036062A KR20020001386A KR 20020001386 A KR20020001386 A KR 20020001386A KR 1020000036062 A KR1020000036062 A KR 1020000036062A KR 20000036062 A KR20000036062 A KR 20000036062A KR 20020001386 A KR20020001386 A KR 20020001386A
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KR
South Korea
Prior art keywords
wafer
thermostat
cleaning liquid
pressure
temperature
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KR1020000036062A
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Korean (ko)
Inventor
김대희
최백일
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박종섭
주식회사 하이닉스반도체
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Application filed by 박종섭, 주식회사 하이닉스반도체 filed Critical 박종섭
Priority to KR1020000036062A priority Critical patent/KR20020001386A/en
Publication of KR20020001386A publication Critical patent/KR20020001386A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PURPOSE: A method for drying a wafer is provided to prevent a wafer from being damaged by high speed rotation or high heat and to reduce defects caused by a damaged wafer, by easily vaporizing cleaning liquid remaining on the surface of the wafer at a room temperature and a low pressure. CONSTITUTION: A wafer(4) after a cleaning process is loaded to the inside of a bath(1) maintaining a constant temperature, and the temperature inside the bath is controlled. The pressure inside the bath is controlled to vaporize cleaning liquid remaining on the surface of the wafer.

Description

웨이퍼 건조 방법 {Method for drying a wafer}Wafer Drying Method {Method for drying a wafer}

본 발명은 웨이퍼 건조 방법에 관한 것으로, 특히, 웨이퍼의 손상 및 파손을 방지할 수 있도록 한 웨이퍼 건조 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer drying method, and more particularly, to a wafer drying method capable of preventing damage and damage to a wafer.

일반적으로 반도체 소자의 제조 공정에서 웨이퍼상에 소정의 층을 형성하기 전 또는 식각 공정을 실시한 후에는 웨이퍼의 표면에 잔류되는 자연 산화막, 유기물, 무기물(금속성 불순물) 등과 같은 오염물질을 제거하기 위하여 세정 공정을 실시한다. 또한, 세정이 완료된 후에는 웨이퍼의 표면에 잔류하는 세정액을 제거하기 위한 건조 공정을 실시한다.Generally, in the semiconductor device manufacturing process, before forming a predetermined layer on a wafer or after performing an etching process, cleaning is performed to remove contaminants such as natural oxide film, organic matter, and inorganic matter (metallic impurities) remaining on the surface of the wafer. Carry out the process. After the cleaning is completed, a drying step for removing the cleaning liquid remaining on the surface of the wafer is performed.

종래에는 세정이 완료된 웨이퍼의 표면에 잔류하는 세정액을 제거하기 위하여 회전식 건조기(Spin Dryer) 또는 화학적 증기 건조기(ChemicalVapor Dryer)를 이용하였다.Conventionally, a spin dryer or a chemical vapor dryer was used to remove the cleaning liquid remaining on the surface of the cleaned wafer.

회전식 건조기는 상온에서 웨이퍼를 고속으로 회전시켜 원심력에 의해 웨이퍼의 표면에 존재하는 세정액이 제거되도록 하며, 화학적 증기 건조기는 고온(~ 200℃)에서 화학적 증기를 발생시키고, 이에 의해 웨이퍼의 표면에 존재하는 세정액이 제거되도록 한다.The rotary dryer rotates the wafer at a high speed at room temperature to remove the cleaning liquid present on the surface of the wafer by centrifugal force, and the chemical vapor dryer generates chemical vapor at a high temperature (˜200 ° C.), thereby presenting it on the surface of the wafer. Allow the cleaning liquid to be removed.

그런데 회전식 건조기를 사용하면 웨이퍼가 고속으로 회전되기 때문에 웨이퍼가 깨지는 등 웨이퍼의 파손이 발생되며, 회전판에 웨이퍼가 장착됨으로써 파티클의 부착으로 인한 불량도 야기된다. 또한, 웨이퍼의 크기가 증가됨에 따라 건조기의 크기도 증가된다.However, when the tumble dryer is used, the wafer is rotated at a high speed, and thus the wafer is broken, and the wafer is attached to the rotating plate, thereby causing defects due to particle adhesion. In addition, as the size of the wafer increases, the size of the dryer also increases.

한편, 화학적 증기 건조기를 사용하면 파티클의 발생은 배제되지만, 고온에서 건조가 이루어지기 때문에 고열로 인한 웨이퍼의 손상(Thermal Damage)이 우려되며, 화학적 증기의 이용에 따른 화재의 발생 가능성이 있다.On the other hand, the use of a chemical vapor dryer eliminates the generation of particles. However, since drying occurs at a high temperature, thermal damage of the wafer due to high heat is concerned, and a fire may occur due to the use of chemical vapor.

따라서 본 발명은 실온 및 낮은 압력 조건에서 웨이퍼의 표면에 잔류하는 세정액이 쉽게 기화되도록 하므로써 상기한 단점을 해소할 수 있는 웨이퍼 건조 방법을 제공하는 데 그 목적이 있다.Accordingly, an object of the present invention is to provide a wafer drying method that can solve the above disadvantages by allowing the cleaning liquid remaining on the surface of the wafer to be easily vaporized at room temperature and low pressure.

도 1은 본 발명에 이용되는 건조 장치의 구성도.1 is a block diagram of a drying apparatus used in the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

1: 항온조 2: 배기구1: thermostat 2: exhaust vent

3: 진공펌프 4: 웨이퍼3: vacuum pump 4: wafer

본 발명에 따른 웨이퍼 건조 방법은 세정이 완료된 웨이퍼를 항온조의 내부로 로드한 후 항온조 내부의 온도를 조절하는 단계와, 항온조 내부의 압력을 조절하여 웨이퍼의 표면에 잔류하는 세정액이 기화되도록 하는 단계로 이루어지며, 항온조 내부의 온도는 10 내지 30℃로 조절되며, 압력은 20 내지 80mmHg로 조절된다.In the wafer drying method according to the present invention, after the cleaned wafer is loaded into the thermostat, the temperature of the thermostat is adjusted, and the pressure of the thermostat is adjusted so that the cleaning liquid remaining on the surface of the wafer is vaporized. It is made, the temperature inside the thermostat is adjusted to 10 to 30 ℃, the pressure is adjusted to 20 to 80mmHg.

그러면 이하, 첨부된 도면을 참조하여 본 발명을 상세히 설명하기로 한다.Next, the present invention will be described in detail with reference to the accompanying drawings.

단일 물질인 경우 액체의 비등점(Boiling Point)은 일정 압력 조건에서 고유값을 가지지만, 압력이 감소되면 기화 온도가 낮아진다. 이를 수식으로 나타내면 하기의 식1과 같다.In the case of a single substance, the boiling point of the liquid has an intrinsic value at constant pressure conditions, but as the pressure decreases, the vaporization temperature is lowered. This is represented by the following formula (1).

pV = nRTpV = nRT

여기서, p는 압력, V는 부피, n은 몰(Mole)수, R은 기체상수 그리고 T는 온도를 나타낸다.Where p is pressure, V is volume, n is Mole number, R is gas constant and T is temperature.

상기와 같은 이상기체 방정식을 통해 알 수 있듯이, 압력이 감소되면 비등점이 낮아지기 때문에 낮은 온도에서 액체의 기화가 발생된다. 그러므로 이러한 원리를 이용하면 낮은 온도에서도 액체를 건조시킬 수 있다.As can be seen from the above ideal gas equation, since the boiling point is lowered when the pressure is reduced, vaporization of the liquid occurs at a lower temperature. Therefore, using this principle, the liquid can be dried even at low temperatures.

본 발명은 이러한 원리를 이용하여 웨이퍼의 표면에 잔류하는 세정액을 제거시킨다.The present invention uses this principle to remove the cleaning liquid remaining on the surface of the wafer.

이를 위해 도 1에 도시된 바와 같이 구성된 건조 장치를 이용한다.To this end, a drying apparatus constructed as shown in FIG. 1 is used.

본 발명에 이용되는 건조 장치는 진공이 유지되며 온도 조절이 가능하도록구성된 항온조(1)내에 다수의 웨이퍼(4)가 적재될 수 있고, 상기 항온조(1)의 일측벽에는 진공펌프(3)와 연결된 배기구(2)가 형성된다.In the drying apparatus used in the present invention, a plurality of wafers 4 may be loaded in a thermostat 1 configured to maintain a vacuum and to control temperature, and one side wall of the thermostat 1 may include a vacuum pump 3 and a vacuum pump 3. A connected exhaust port 2 is formed.

먼저, 세정이 완료된 웨이퍼(4)를 상기 항온조(1)의 내부로 로드(Load)하여 적재시킨 후 상기 항온조(1) 내부의 온도를 10 내지 30℃가 되도록 조절한다. 그리고 상기 진공펌프(3)를 동작시켜 상기 항온조(1) 내부의 압력이 20 내지 80mmHg가 되도록 하여 웨이퍼의 표면에 잔류하는 세정액이 기화되도록 한다.First, the cleaned wafer 4 is loaded and loaded into the thermostat 1, and then the temperature of the thermostat 1 is adjusted to 10 to 30 ° C. The vacuum pump 3 is operated so that the pressure in the thermostat 1 is 20 to 80 mmHg so that the cleaning liquid remaining on the surface of the wafer is vaporized.

이러한 감압 증류법(Evaporation Method)을 이용하면 실온에서 용매의 제거가 가능하기 때문에 열에 의한 물질의 변성이 발생되지 않으며, 짧은 시간내에 건조가 가능하다. 그러므로 웨이퍼의 표면에 존재하는 세정액(예를들어, 순수)이 쉽게 증발되어 제거된다.By using this evaporation method, the solvent can be removed at room temperature, so that no degeneration of the material due to heat occurs and drying is possible within a short time. Therefore, the cleaning liquid (eg, pure water) present on the surface of the wafer is easily evaporated and removed.

단지, 세정액이 가지는 잠열(Latent Heat)때문에 웨이퍼가 냉각되어 결빙되는 현상이 발생될 수 있는데, 웨이퍼의 온도를 일정하게 유지시키면 이러한 현상이 발생되지 않게 된다.However, a phenomenon in which the wafer is cooled and frozen due to latent heat of the cleaning liquid may occur. If the temperature of the wafer is kept constant, this phenomenon does not occur.

상술한 바와 같이 본 발명은 실온 및 낮은 압력 조건에서 웨이퍼의 표면에 잔류하는 세정액이 쉽게 기화되도록 하므로써 고속의 회전 또는 고열로 인한 웨이퍼의 손상 또는 파손이 방지되며, 건조 시간이 단축된다. 따라서 웨이퍼의 손실로 인한 불량이 감소되고, 공정 시간이 단축되어 소자의 수율 증대가 이루어진다.As described above, the present invention allows the cleaning liquid remaining on the surface of the wafer to be easily vaporized at room temperature and low pressure, thereby preventing damage or breakage of the wafer due to high speed rotation or high heat, and shortening drying time. As a result, defects due to wafer loss are reduced, and process time is shortened to increase the yield of devices.

Claims (6)

세정이 완료된 웨이퍼를 항온조의 내부로 로드한 후 상기 항온조 내부의 온도를 조절하는 단계와,Adjusting the temperature inside the thermostat chamber after loading the cleaned wafer into the thermostat chamber; 상기 항온조 내부의 압력을 조절하여 상기 웨이퍼의 표면에 잔류하는 세정액이 기화되도록 하는 단계로 이루어지는 것을 특징으로 하는 웨이퍼 세정 방법.Wafer cleaning method comprising the step of adjusting the pressure in the thermostat so that the cleaning liquid remaining on the surface of the wafer is vaporized. 제 1 항에 있어서,The method of claim 1, 상기 항온조 내부의 온도는 10 내지 30℃로 조절되는 것을 특징으로 하는 웨이퍼 건조 방법.Wafer drying method characterized in that the temperature inside the thermostat is adjusted to 10 to 30 ℃. 제 1 항에 있어서,The method of claim 1, 상기 항온조 내부의 압력은 20 내지 80mmHg로 조절되는 것을 특징으로 하는 웨이퍼 건조 방법.Wafer drying method characterized in that the pressure in the thermostat is adjusted to 20 to 80mmHg. 제 1 항에 있어서,The method of claim 1, 상기 항온조 내부의 압력은 진공펌프의 동작에 의해 조절되는 것을 특징으로하는 웨이퍼 건조 방법.The pressure inside the thermostat is controlled by the operation of the vacuum pump wafer drying method. 실온 및 20 내지 80mmHg의 압력 조건에서 세정이 완료된 웨이퍼의 표면에 잔류하는 세정액이 기화되도록 하는 것을 특징으로 하는 웨이퍼 건조 방법.And a cleaning liquid remaining on the surface of the cleaned wafer at a room temperature and a pressure of 20 to 80 mmHg. 제 5 항에 있어서,The method of claim 5, 상기 실온은 10 내지 30℃인 것을 특징으로 하는 웨이퍼 건조 방법.The room temperature is a wafer drying method, characterized in that 10 to 30 ℃.
KR1020000036062A 2000-06-28 2000-06-28 Method for drying a wafer KR20020001386A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100464853B1 (en) * 2002-06-20 2005-01-06 삼성전자주식회사 Method and apparatus for drying wafer by instant decompressing and heating
KR100783761B1 (en) * 2006-10-27 2007-12-07 주식회사 디엠에스 Vacuum dry apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100464853B1 (en) * 2002-06-20 2005-01-06 삼성전자주식회사 Method and apparatus for drying wafer by instant decompressing and heating
US6889447B2 (en) 2002-06-20 2005-05-10 Samsung Electronics Co., Ltd. Method for drying a wafer and apparatus for performing the same
KR100783761B1 (en) * 2006-10-27 2007-12-07 주식회사 디엠에스 Vacuum dry apparatus

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