KR200165744Y1 - Gas tube for the cvd thermal furnace tube - Google Patents
Gas tube for the cvd thermal furnace tube Download PDFInfo
- Publication number
- KR200165744Y1 KR200165744Y1 KR2019970011914U KR19970011914U KR200165744Y1 KR 200165744 Y1 KR200165744 Y1 KR 200165744Y1 KR 2019970011914 U KR2019970011914 U KR 2019970011914U KR 19970011914 U KR19970011914 U KR 19970011914U KR 200165744 Y1 KR200165744 Y1 KR 200165744Y1
- Authority
- KR
- South Korea
- Prior art keywords
- tube
- process gas
- gas inlet
- thermal furnace
- inlet pipe
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
Abstract
본 고안은 화학기상증착장비용 써멀 퍼니스 튜브(Thermal Furnace Tube)의 공정가스 유입관에 관한 것으로서, 좀더 구체적으로는 상기 공정가스 유입관의 구조를 개선하여 튜브내의 공정 영역을 넓혀 웨이퍼의 생산성을 향상시키도록 한 것이다.The present invention relates to a process gas inlet tube of a thermal furnace tube for chemical vapor deposition equipment, and more specifically, to improve the structure of the process gas inlet tube, thereby widening the process area in the tube to improve wafer productivity. It was made to be.
이를 위해, 튜브(3)에 설치된 공정가스 유입관(101)을 상기 튜브(3)내로 연장하여서 된 것이다.To this end, the process gas inlet pipe 101 installed in the tube (3) is to extend into the tube (3).
Description
본 고안은 화학기상증착장비용 써멀 퍼니스 튜브(Thermal Furnace Tube)의 공정가스 유입관에 관한 것으로서, 좀더 구체적으로는 상기 공정가스 유입관의 구조를 개선하여 튜브내의 공정 영역을 넓히도록 한 것이다.The present invention relates to a process gas inlet tube of a thermal furnace tube for chemical vapor deposition equipment, and more specifically, to improve the structure of the process gas inlet tube to widen a process region in the tube.
일반적으로 화학기상증착(Chemical Vapor Deposition)장비는 웨이퍼의 표면에 일정한 형태의 막을 증착시키는 반도체 장비로서, 이와같은 화학기상증착장비에 의해 웨이퍼의 표면에 상기 일정한 형태의 막이 증착되는 과정을 개략적으로 설명하면 다음과 같다.In general, chemical vapor deposition (Chemical Vapor Deposition) equipment is a semiconductor device for depositing a certain type of film on the surface of the wafer, the chemical vapor deposition equipment by the chemical vapor deposition device to explain the process of depositing a certain type of film on the surface of the wafer Is as follows.
먼저, 히터(1)를 발열시켜 원하는 온도까지 상승되면 열전대(2)에 의해 상기 온도를 감지하여 이를 계속유지시킨다음 상기 히터(1)내에 감싸여진 상태로 설치된 튜브(3)의 내부로 다수의 웨이퍼(4)를 장착한 캔티레버 씨스(Cantilever Sheath)(5)를 별도의 이송장치(도시는 생략함)에 의해 인입시킨다.First, when the heater 1 heats up to a desired temperature, the thermocouple 2 senses the temperature and maintains the temperature, and then a plurality of tubes are installed inside the tube 3 installed in the heater 1. A cantilever sheath 5 on which the wafer 4 is mounted is drawn in by a separate transfer device (not shown).
이와같이 튜브(3)내로 웨이퍼(4)의 인입이 완료되면 상기 튜브(3)에 설치된 공정가스 유입관(6)을 통해 튜브(3)내로 공정가스를 유입시키는데, 이때 상기 공정가스는 낮은 온도상태로 공급되어 히터(1)의 발열에 따라 화학반응하여 상기 캔티레버 씨스(5)에 장착된 다수의 웨이퍼(4)표면에 일정한 형태의 막을 증착시키게 된다.As such, when the drawing of the wafer 4 into the tube 3 is completed, the process gas is introduced into the tube 3 through the process gas inlet tube 6 installed in the tube 3. And chemically react with the heat generated by the heater 1 to deposit a certain type of film on the surfaces of the plurality of wafers 4 mounted on the cantilever sheath 5.
한편, 상기 공정가스가 유입되는 종래의 공정가스 유입관(6)의 구조를 살펴보면 상기 공정가스 유입관(6)의 일단은 외부의 연결관(7)에 연결되어 있고, 다른 일단은 튜브(3)에 고정된 상태로 일직선을 유지하며 설치되어 있는 구조이다.On the other hand, looking at the structure of the conventional process gas inlet pipe 6 into which the process gas is introduced, one end of the process gas inlet pipe 6 is connected to the external connection pipe 7, the other end of the tube (3) ) It is a structure that is installed while maintaining a straight line in a fixed state.
따라서, 연결관(7)을 통해 유입되는 공정가스는 상기 일직선의 공정가스 유입관(6)을 저항없이 통과하여 곧바로 상기 튜브(3)내로 유입되게 되는데, 이때 상기 유입되는 공정가스는 튜브(3)내로 유입되기 시작하면서 L1의 영역인 일정거리를 직선의 형태로 유입되어 온도가 상승되면서 L2의 영역에서 상기와같은 화학반응을 하게 된다.Therefore, the process gas flowing through the connecting pipe 7 passes through the straight process gas inlet pipe 6 without resistance and immediately flows into the tube 3, wherein the incoming process gas is the tube 3. As it begins to flow into the), a certain distance, which is the area of L1, is introduced in a straight line, and the temperature rises, thereby performing the above chemical reaction in the area of L2.
그러나 종래에는 도 1 및 도 3에 도시한 L1의 영역에 낮은 온도의 공정가스가 곧바로 유입되면서 온도저하 영역이 길어져 상기 L1의 영역에서는 웨이퍼에 대한 증착을 할 수 없게되어 그만큼 L2의 공정영역이 줄어드는 문제점이 있었다.However, in the related art, a low temperature process gas immediately flows into the region L1 illustrated in FIGS. 1 and 3, and the temperature reduction region is long, so that deposition on the wafer cannot be performed in the region L1, thereby reducing the process region of L2. There was a problem.
본 고안은 종래의 이와같은 문제점을 해결하기 위해 안출한 것으로서, 상기 웨이퍼에 대한 증착영역이 넓어지도록 함에 따라 생산성을 향상시키는데 그 목적이 있다.The present invention has been made to solve such a problem in the prior art, and its purpose is to improve productivity as the deposition area for the wafer is widened.
상기 목적을 달성하기 위한 본 고안의 형태에 따르면 튜브에 설치된 공정가스 유입관을 상기 튜브내로 연장하여서 됨을 특징으로하는 화학기상증착장비용 써멀 퍼니스 튜브(Thermal Furnace Tube)의 공정가스 유입관이 제공된다.According to an aspect of the present invention for achieving the above object, there is provided a process gas inlet tube of a thermal furnace tube for chemical vapor deposition equipment, characterized by extending the process gas inlet tube installed in the tube into the tube. .
도 1은 종래의 공정가스 유입관을 갖는 써멀 퍼니스 튜브를 나타낸 종단면도Figure 1 is a longitudinal sectional view showing a thermal furnace tube having a conventional process gas inlet pipe
도 2는 본 고안의 공정가스 유입관을 갖는 써멀 퍼니스 튜브를 나타낸 종단면도Figure 2 is a longitudinal sectional view showing a thermal furnace tube having a process gas inlet pipe of the present invention
도 3은 종래의 공정영역 및 본 고안의 공정영역을 비교하여 나타낸 그래프 선도3 is a graph showing a comparison between the conventional process area and the process area of the present invention
*도면의 주요부분에 대한 부호의 간단한 설명** Brief description of symbols for the main parts of the drawings *
3 : 튜브101: 공정가스 유입관3: tube 101: process gas inlet pipe
이하, 본 고안을 일 실시예로 나타낸 첨부된 도 2 및 도 3을 참고로 더욱 상세히 설명하면 다음과 같다.Hereinafter, described in more detail with reference to the accompanying Figures 2 and 3 showing the present invention as an embodiment.
도 2는 본 고안의 공정가스 유입관을 갖는 써멀 퍼니스 튜브를 나타낸 종단면도이고, 도 3은 종래의 공정영역 및 본 고안의 공정영역을 비교하여 나타낸 그래프 선도이다.Figure 2 is a longitudinal sectional view showing a thermal furnace tube having a process gas inlet pipe of the present invention, Figure 3 is a graph showing a comparison of the conventional process region and the process region of the present invention.
본 고안은 튜브(3)에 설치된 공정가스 유입관(101)을 도시한 M1의 영역만큼 상기 튜브(3)내에 연장설치한 것으로서, 공정가스 유입관(101)의 일단은 외부의 연결관(7)에 연결하고 상기 공정가스 유입관(101)의 다른 일단은 튜브내에서 상기 공정가스의 토출구(101a)쪽으로 갈수록 나선(螺線)의 내경이 좁아지도록 코일형태를 한 것이다.The present invention is a process gas inlet tube 101 installed in the tube (3) extends in the tube (3) as much as the region of M1 shown, one end of the process gas inlet tube 101 is an external connection pipe (7) ) And the other end of the process gas inlet tube 101 is coiled so that the inner diameter of the spiral becomes narrower toward the outlet 101a of the process gas in the tube.
이와같이 구성된 본 고안의 작용을 설명하기 전에 먼저, 캔티레버 씨스(5)에 다수의 웨이퍼(4)를 장착하여 튜브(3)내에 인입시킨 다음 히터(1)를 발열시키기 까지는 그 과정이 동일하므로 상기 공정가스 유입관(101)을 통해 공정가스를 유입시키는 과정부터 설명하면 다음과 같다.Before describing the operation of the present invention configured as described above, the process is the same until the plurality of wafers (4) to the cantilever sheath (5) to be inserted into the tube (3) and then to heat the heater (1) Referring to the process of introducing the process gas through the gas inlet pipe 101 as follows.
상기 연결관(7)을 통해 외부로부터 낮은 온도의 공정가스를 유입시키면 상기 유입되는 공정가스는 튜브(3)외측의 일직선 형태인 공정가스 유입관(101)부분을 통과하여 상기 튜브(3)내로 유입된다.When a low temperature process gas is introduced from the outside through the connecting pipe 7, the incoming process gas passes through a portion of the process gas inlet pipe 101 having a straight shape outside the tube 3 and into the tube 3. Inflow.
여기서, 상기 유입되는 공정가스는 나선의 형태인 튜브(3)내측에 위치된 공정가스 유입관(101)부분을 통과한 다음 상기 튜브(3)내에 토출되는데, 이때 상기 토출되는 공정가스는 상술한 바와같이 히터(1)가 발열을 하고 있으므로 상기 발열에 의해 M1의 영역인 튜브(3)내의 나선 형태인 공정가스 유입관(101)내부를 통과하면서 온도가 일정온도 높아진다음 상기 토출구(101a)를 통해 튜브(3)내로 토출되게 된다.Here, the incoming process gas passes through a portion of the process gas inlet tube 101 located inside the tube 3 in the form of a spiral, and then is discharged into the tube 3, wherein the discharged process gas is described above. As the heater 1 generates heat as described above, the heat is increased by a constant temperature while passing through the spiral inside the process gas inlet pipe 101 in the tube 3 which is the region of M1. Through the tube 3 is discharged.
그리고, 상기 토출된 공정가스는 M2의 영역에서 웨이퍼(4)의 표면에 대한 증착을 하게 된다.Then, the discharged process gas is deposited on the surface of the wafer 4 in the region of M2.
한편, 상기 튜브(3)내측에 위치되는 공정가스 유입관(101)은 튜브(3)내로 토출되기 전에 공정가스 유입관을 통해 일정거리를 통과하면서 히터(1)에 의해 일정한 온도까지 오르도록 하면 되므로 상기한 바와같이 나선의 코일형태로 한정할 필요는 없고 상기한 목적을 달성할 수 있으면 지그재그 형태등으로 하여도 그 형상에 상관 없다.On the other hand, the process gas inlet tube 101 located inside the tube 3 is to be raised to a constant temperature by the heater 1 while passing a predetermined distance through the process gas inlet tube before being discharged into the tube (3) Therefore, it is not necessary to limit to the spiral coil shape as described above, and the shape may be used even if it is a zigzag shape or the like as long as the above object can be achieved.
이상에서와같이 본 고안은 낮은온도의 공정가스가 튜브내에서 토출되기 전에 충분히 온도가 높아진 다음 토출되므로 안정된 증착을 할 수 있게 됨은 물론 도시한 M2와같이 공정영역이 넓어지게 되어 생산성이 향상되는 매우 유용한 효과가 있다.As described above, the present invention is capable of stable deposition since the temperature is sufficiently increased before the low temperature process gas is discharged in the tube, and the process area is widened, as shown in M2. It has a useful effect.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970011914U KR200165744Y1 (en) | 1997-05-26 | 1997-05-26 | Gas tube for the cvd thermal furnace tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019970011914U KR200165744Y1 (en) | 1997-05-26 | 1997-05-26 | Gas tube for the cvd thermal furnace tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR19980067352U KR19980067352U (en) | 1998-12-05 |
| KR200165744Y1 true KR200165744Y1 (en) | 2000-01-15 |
Family
ID=19501643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019970011914U KR200165744Y1 (en) | 1997-05-26 | 1997-05-26 | Gas tube for the cvd thermal furnace tube |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR200165744Y1 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102178868B1 (en) * | 2013-12-30 | 2020-11-13 | 세메스 주식회사 | apparatus for supplying fluid and apparatus for treating substrate including the same |
-
1997
- 1997-05-26 KR KR2019970011914U patent/KR200165744Y1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR19980067352U (en) | 1998-12-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100481008B1 (en) | Gas heating apparatus for chemical vapor deposition process and semiconductor device fabrication method using the same | |
| KR100316796B1 (en) | Liquid cooled trap | |
| TWI458946B (en) | Thermocouple | |
| US6951587B1 (en) | Ceramic heater system and substrate processing apparatus having the same installed therein | |
| US5561087A (en) | Method of forming a uniform thin film by cooling wafers during CVD | |
| KR100516847B1 (en) | Steam generation method and apparatus | |
| WO1997028886A9 (en) | Liquid cooled trap patent application | |
| WO2017196952A1 (en) | Point of dispense heat exchanger for fluids | |
| KR200165744Y1 (en) | Gas tube for the cvd thermal furnace tube | |
| US6120285A (en) | Dimpled thermal processing furnace and method for processing semiconductor wafers | |
| WO2009142911A2 (en) | Robust outlet plumbing for high power flow remote plasma source | |
| JP2022185393A (en) | Semiconductor manufacturing device and temperature control method | |
| JP6197132B1 (en) | Piping system parts that prevent the accumulation of exhaust matter on the piping system | |
| KR100237828B1 (en) | Gas heating apparatus | |
| KR20080023445A (en) | In-line heater unit for heating a fluid for manufacturing the semiconductor | |
| WO2020163074A1 (en) | Multi channel splitter spool | |
| KR102408975B1 (en) | Fluid heater and method for manufacturing fluid heater | |
| JP2000121153A (en) | Fluid heater and base processor using it | |
| JPH06112140A (en) | Exhaust pipe of single wafer vapor growth apparatus | |
| KR100257737B1 (en) | Shower head for semiconductor wafer deposition equipments | |
| KR100445341B1 (en) | Apparatus for fabricating a semiconductor device | |
| TWM641677U (en) | Fluidic temperature-and-flow control heating device | |
| KR20230105098A (en) | air heater | |
| EP4073448A1 (en) | Heat exchanger component with varying twist angle | |
| KR20000051890A (en) | Gas injection tube for a vertical diffusion furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E701 | Decision to grant or registration of patent right | ||
| REGI | Registration of establishment | ||
| FPAY | Annual fee payment |
Payment date: 20050923 Year of fee payment: 7 |
|
| LAPS | Lapse due to unpaid annual fee |