KR20010084812A - Method of removing a photoresist - Google Patents
Method of removing a photoresist Download PDFInfo
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- KR20010084812A KR20010084812A KR1020000010135A KR20000010135A KR20010084812A KR 20010084812 A KR20010084812 A KR 20010084812A KR 1020000010135 A KR1020000010135 A KR 1020000010135A KR 20000010135 A KR20000010135 A KR 20000010135A KR 20010084812 A KR20010084812 A KR 20010084812A
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 98
- 238000000034 method Methods 0.000 title claims abstract description 67
- 239000000203 mixture Substances 0.000 claims abstract description 5
- 238000000059 patterning Methods 0.000 claims abstract description 3
- 238000004380 ashing Methods 0.000 claims description 23
- 239000002904 solvent Substances 0.000 claims description 11
- 239000003791 organic solvent mixture Substances 0.000 claims 1
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 abstract description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract description 4
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 abstract description 2
- 238000005530 etching Methods 0.000 abstract 2
- 239000003960 organic solvent Substances 0.000 abstract 2
- 238000005406 washing Methods 0.000 abstract 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract 1
- 229910001873 dinitrogen Inorganic materials 0.000 abstract 1
- 229910001882 dioxygen Inorganic materials 0.000 abstract 1
- 239000012046 mixed solvent Substances 0.000 description 31
- 230000000694 effects Effects 0.000 description 10
- 238000007689 inspection Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000013557 residual solvent Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
본 발명은 반도체 제조 방법에 관한 것으로써, 좀 더 구체적으로 포토레지스트 제거 방법에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing method, and more particularly, to a photoresist removing method.
반도체 공정 중 사진 공정은 반도체 구조물을 형성하기 위한 포토레지스트 패턴을 형성하는 단계이다. 사진 공정은 패턴을 형성하기 위한 절연막 또는 도전막 상에 포토레지스트막을 형성하고 마스크 패턴이 형성된 레티클을 사용하여 상기 포토레지스트막에 노광을 한다. 빛에 노출되거나 노출되지 않은 영역을 선택적으로 현상하여 포토레지스트 패턴을 형성한다. 상기 포토레지스트 패턴을 SEM(Scanning Electro Microscope)을 이용하여 인 라인(in line) 상태에서 검사한다. 검사 결과 상기 포토레지스트 패턴이 불량하다고 판단되면 상기 포토레지스트 패턴을 제거하는 재작업(rework)을 해야한다. 그런데, 상기 검사 과정에서 상기 SEM에서 발생되는 약 800eV의 전하들이 상기 포토레지스트와 충돌하여 상기 포토레지스트의 구성 요소인 고분자 물질(resin)과 광반응제(PAC) 등을 서로 융합 반응시킨다. 그 결과, 상기 포토레지스트를 경화시켜 재작업시 상기 포토레지스트를 제거하기 어렵게 만든다. 현재의 공정에서 상기 경화된 포토레지스트를 제거하는 방법으로 황산(H2SO4)과 과산화수소(H2O2)를 혼합한 무기혼합용제를 사용한다. 상기 무기혼합용제를 이용한 방법은 처리 시간이 2700초나 되어 반도체 공정의 생산성을 감소시키는 요인이 되고 있다.The photographic process of the semiconductor process is a step of forming a photoresist pattern for forming a semiconductor structure. In the photolithography process, a photoresist film is formed on an insulating film or a conductive film for forming a pattern, and the photoresist film is exposed to light using a reticle having a mask pattern formed thereon. The exposed or unexposed areas are selectively developed to form a photoresist pattern. The photoresist pattern is inspected in line with a scanning electron microscope (SEM). If it is determined that the photoresist pattern is defective, a rework of removing the photoresist pattern should be performed. However, about 800 eV of charges generated in the SEM during the inspection process collide with the photoresist to fuse the polymer material (resin) and the photoreactant (PAC), which are components of the photoresist, with each other. As a result, the photoresist hardens, making it difficult to remove the photoresist upon rework. In the present process, an inorganic mixed solvent in which sulfuric acid (H 2 SO 4 ) and hydrogen peroxide (H 2 O 2 ) is mixed is used to remove the cured photoresist. The method using the inorganic mixed solvent has a processing time of 2700 seconds, which is a factor of reducing the productivity of the semiconductor process.
본 발명의 목적은 포토레지스트를 깨끗히 없애기 위한 포토레지스트 제거 방법을 제공하는 것이다.It is an object of the present invention to provide a photoresist removal method for clearing photoresist.
본 발명의 다른 목적은 포토레지스트를 없애는 처리 시간을 감소시키기 위한 포토레지스트 제거 방법을 제공하는 것이다.Another object of the present invention is to provide a photoresist removal method for reducing the processing time for removing the photoresist.
도 1은 본 발명의 실시예에 따른 포토레지스트 제거 방법의 공정 단계를 보여주는 순서도이다.1 is a flow chart showing the process steps of a photoresist removal method according to an embodiment of the present invention.
상술한 목적을 달성하기 위한 본 발명에 의하면, 포토레지스트 제거 방법은 포토레지스트막을 형성한다. 사진 공정을 통해 상기 포토레지스트막을 패터닝하여 포토레지스트 패턴을 형성한다. 상기 포토레지스트 패턴을 검사한다. 애싱 공정을 사용하여 상기 포토레지스트 패턴을 제거한다. 유기혼합용제를 사용하여 상기 애싱 공정 후에 잔존하는 포토레지스트 패턴을 제거한다.According to the present invention for achieving the above object, the photoresist removing method forms a photoresist film. The photoresist film is patterned through a photolithography process to form a photoresist pattern. The photoresist pattern is inspected. An ashing process is used to remove the photoresist pattern. An organic mixed solvent is used to remove the photoresist pattern remaining after the ashing process.
(실시예)(Example)
도 1을 참조하여 본 발명의 실시예에 따른 포토레지스트 제거 방법을 자세히설명한다.A photoresist removal method according to an embodiment of the present invention will be described in detail with reference to FIG. 1.
본 발명의 신규한 포토레지스트 제거 방법은 포토레지스트 패턴 검사 후 애싱 공정과 유기혼합용제를 이용하여 단계적으로 포토레지스트를 제거한다.The novel photoresist removal method of the present invention removes the photoresist step by step using an ashing process and an organic mixed solvent after the photoresist pattern inspection.
도 1은 본 발명의 실시예에 따른 포토레지스트 제거 방법의 공정 단계를 보여주는 순서도이다.1 is a flow chart showing the process steps of a photoresist removal method according to an embodiment of the present invention.
도 1을 참조하면, 반도체 구조물을 형성하기 위해 절연막을 형성한다. 상기 절연막을 세정한다. 상기 절연막 상에 포토레지스트를 도포한다. 상기 포토레지스트 도포는 웨이퍼 중심부에 소정의 포토레지스트를 공급한 다음 약 30초간 약 2000rpm의 회전 속도로 상기 웨이퍼를 회전시키면 상기 웨이퍼 전면에 상기 포토레지스트가 고르게 퍼진다. 상기 포토레지스트는 일반적으로 고분자물질(resin), 광반응제(PAC;Photo Active Compound) 및 용제(solvent)로 구성된다. 상기 광반응제는 노광시 빛에 직접적으로 반응하는 물질이고 용제는 상기 포토레지스트가 용해되어 흐름성을 갖도록 하는 물질이다. 도포된 상기 포토레지스트는 웨이퍼 전면에서 일정한 두께를 유지한다. 상기 용제는 휘발성이 커서 대부분 대기 중으로 증발되고 도포 후 상기 포토레지스트에는 10% 내지 20%의 용제와 수분만이 남게 된다. 상기 용제와 수분은 노광 공정시 빛을 흡수하거나 원치 않는 화학 반응을 유발하여 패턴 불량을 초래할 수 있다. 따라서, 잔류하는 용제와 수분을 제거하는 공정이 필요한데, 챔버(chamber) 내에 웨이퍼를 넣고 열을 가하여 용매와 수분을 제거하는 베이크(bake) 공정을 수행한다. 상기 베이크 공정은 약 160℃의 온도에서 약 3분 동안 진행한다.Referring to FIG. 1, an insulating film is formed to form a semiconductor structure. The insulating film is cleaned. A photoresist is applied onto the insulating film. In the photoresist coating, after supplying a predetermined photoresist to the center of the wafer, the photoresist is evenly spread over the entire surface of the wafer by rotating the wafer at a rotational speed of about 2000 rpm for about 30 seconds. The photoresist is generally composed of a polymer, a photo active compound (PAC), and a solvent. The photoreactive agent is a material that reacts directly with light during exposure, and a solvent is a material that allows the photoresist to dissolve and have flowability. The photoresist applied maintains a constant thickness at the front of the wafer. The solvent has a high volatility, and most of it is evaporated into the atmosphere. After application, only 10% to 20% of solvent and moisture remain in the photoresist. The solvent and moisture may absorb light during the exposure process or cause unwanted chemical reactions, resulting in pattern defects. Therefore, a process for removing residual solvent and water is required, and a wafer is placed in a chamber and heated to remove a solvent and water. The bake process proceeds for about 3 minutes at a temperature of about 160 ° C.
상기 웨이퍼를 정렬 노광기에 넣고 정렬과 노광을 한 후 현상을 하여 포토레지스트 패턴을 형성한다(10). 상기 정렬 과정은 먼저 레티클(reticle)의 위치 확인, 웨이퍼의 위치 확인 및 레티클과 웨이퍼의 위치 정렬 순으로 진행된다. 상기 노광 과정은 상기 레티클과 상기 웨이퍼가 정렬된 상태에서 상기 레티클 상에 빛을 입사시킨다. 여기서 사용되는 빛은 365nm의 파장을 갖는 i-라인(line) 빛 또는 245nm의 파장을 갖는 DUV(Deep Ultra Violet) 빛이 사용된다. i-라인 빛은 0.30㎛ 이상의 패턴 형성에 적합하고 DUV 빛은 0.20㎛ 이상의 패턴 형성에 적합하다. 상기 현상 과정은 현상액을 사용하여 상기 포토레지스트의 노광된 영역 또는 노광되지 않은 영역을 선택적으로 제거함으로써 포토레지스트 패턴이 형성된다. 상기 포토레지스트가 양성(positive)의 포토레지스트이면 빛에 노출된 부분이 현상액과 반응하여 제거되고, 음성(negative)의 포토레지스트이면 빛에 노출되지 않은 부분이 현상액과 반응하여 제거된다.The wafer is placed in an alignment exposure machine, aligned and exposed, and then developed to form a photoresist pattern (10). The alignment process first proceeds in order of reticle positioning, wafer positioning and reticle and wafer positioning. The exposure process injects light onto the reticle while the reticle and the wafer are aligned. As used herein, i-line light having a wavelength of 365 nm or deep ultra violet (DUV) light having a wavelength of 245 nm is used. i-line light is suitable for pattern formation of 0.30 μm or more and DUV light is suitable for pattern formation of 0.20 μm or more. In the developing process, a photoresist pattern is formed by selectively removing exposed or unexposed regions of the photoresist using a developing solution. If the photoresist is a positive photoresist, the portion exposed to light is removed by reaction with the developer, and if the photoresist is negative, the portion not exposed to light is reacted and removed with the developer.
현상 후 상기 포토레지스트에 함유된 용제와 수분을 제거하기 위하여 베이크 처리를 한 번 더 하고 검사 과정을 수행한다(20). 검사 과정에서는 SEM(Scanning Electro Microscope)을 통한 포토레지스트 패턴 CD(Critical Dimension) 검사, 정렬 상태를 검사하는 정렬 검사, 불량을 검사하는 결함 검사 등이 있다. 이러한 일련의 검사 과정에서 공정 기준에 벗어나는 불량이 발생되면 상기 포토레지스트를 제거하고 다시 포토레지스트 패터닝 과정을 실시하여야 하는데 이것을 재작업(rework)이라고 한다. SEM을 통한 CD 검사는 인 라인(in line) 상태에서 수행되는데 800eV의 에너지를 갖는 SEM의 강렬한 전자빔(elecron beam)에 노출된상기 포토레지스트가 변화되어 경화된 포토레지스트가 된다. 즉, 상기 포토레지스트의 성분인 고분자물질(resin)과 광반응제(PAC) 등이 서로 융합 반응하여 새로운 생성물이 만들어져 상기 포토레지스트를 경화시킨다. 상기 경화된 포토레지스트는 종래의 애싱(ashing)이나 무기혼합용제(H2SO4)를 사용하여 재작업을 하면 상기 경화된 포토레지스트가 완전히 제거되지 않거나 재작업 시간이 길어져 생산성이 저하되는 문제를 안고 있다. 본 발명에서는 재작업 시간을 줄이면서 상기 경화된 포토레지스트를 완전히 제거하는 방법을 제시한다. 본 발명에서는 재작업 처리를 위해 유기혼합용제(GNA)를 사용한다. 상기 유기혼합용제는 C4H5O2(GBL:Gamma Butyro Lactone), CH3COOC4H9(Normal Butyl Acetate) 및 CH3COCH3(Acetone)의 유기물을 혼합한 용제이다. 표준 공정에서 상기 유기혼합용제만을 사용하여 상기 경화된 포토레지스트를 완전히 제거할 수 있다. 그러나, 베이크 처리를 표준 공정보다 추가적으로 더 받은 포토레지스트일 경우에는 상기 유기혼합용제를 사용하더라도 상기 경화된 포토레지스트가 완전히 제거되지 않는다. 따라서, 본 발명에서는 애싱(ashing) 공정을 상기 유기혼합용제를 사용한 공정 이전에 먼저 실시하여 상기 유기혼합용제의 효과를 극대화하고자 한다(30).After the development, the baking process is performed once more to remove the solvent and water contained in the photoresist, and the inspection process is performed (20). The inspection process includes photoresist pattern CD (Critical Dimension) inspection through SEM (Scanning Electro Microscope), alignment inspection to check alignment status, and defect inspection to inspect defects. When defects that deviate from the process standards are generated in this series of inspection processes, the photoresist should be removed and the photoresist patterning process should be performed again. This is called rework. CD inspection through the SEM is performed in line, and the photoresist exposed to the intense electron beam of the SEM with an energy of 800 eV is changed into a cured photoresist. That is, a polymer, a component of the photoresist, a photoreactant (PAC), and the like are fused with each other to form a new product to cure the photoresist. When the cured photoresist is reworked using conventional ashing or an inorganic mixed solvent (H 2 SO 4 ), the cured photoresist may not be completely removed or the rework time may be lengthened, thus reducing productivity. Holding it. The present invention provides a method of completely removing the cured photoresist while reducing rework time. In the present invention, an organic mixed solvent (GNA) is used for the rework treatment. The organic mixed solvent is a solvent in which organic materials of C 4 H 5 O 2 (GBL: Gamma Butyro Lactone), CH 3 COOC 4 H 9 (Normal Butyl Acetate), and CH 3 COCH 3 (Acetone) are mixed. In the standard process, only the organic mixed solvent may be used to completely remove the cured photoresist. However, in the case of a photoresist that is further subjected to a baking process than a standard process, the cured photoresist is not completely removed even when the organic mixed solvent is used. Therefore, in the present invention, an ashing process is first performed before the process using the organic mixed solvent to maximize the effect of the organic mixed solvent (30).
애싱 공정은 상기 경화된 포토레지스트가 형성된 웨이퍼를 챔버 내의 척 상에 얹어 놓고 챔버 내부 압력을 1000mT 내지 1800mT 범위로 유지시키고, 챔버 내의 전극에 약 1100W 내외의 전력을 인가시키고, 척의 온도를 200℃ 내지 320℃ 범위로 유지시킨다. 그리고, 3000sccm 내지 4000sccm 유량 범위를 갖는 O2기체와 100sccm내지 200sccm 유량 범위를 갖는 N2기체를 상기 챔버 내에 주입하여 상기 경화된 포토레지스트를 식각한다. 바람직하게는 1500mT의 챔버 압력, 1100W의 전극 전력, 270℃의 척 온도, 3550sccm 유량의 O2기체 및 150sccm 유량의 N2기체를 사용하는 조건에서 양호한 결과를 얻을 수 있다. 이 때의 처리 시간은 약 90초로 가장 짧은 시간에 상기 경화된 포토레지스트를 제거할 수 있는 장점이 있다. 그러나, 치명적으로 상기 애싱 공정만을 사용해서는 상기 경화된 포토레지스트를 완전히 깨끗하게 제거할 수 없다. 따라서, 애싱 공정 후 본 발명에서 제시한 유기혼합용제를 사용하여 추가 공정을 진행하면 상기 경화된 포토레지스트를 완전하게 제거할 수 있다(40). 또한, 상기 애싱 공정 후 유기혼합용제를 사용하여 상기 경화된 포토레지스트를 제거하면, 추가된 베이크 공정시 상기 유기혼합용제만을 사용해서 완전히 제거할 수 없었던 상기 경화된 포토레지스트도 제거할 수 있는 효과가 있다.The ashing process loads the cured photoresist on the chuck in the chamber, maintains the pressure inside the chamber in the range of 1000 mT to 1800 mT, applies an electric power of about 1100 W to the electrode in the chamber, and the temperature of the chuck is 200 ° C. to Maintain in the range of 320 ° C. Then, the cured photoresist is etched by injecting an O 2 gas having a flow rate of 3000 sccm to 4000 sccm and an N 2 gas having a flow rate of 100 sccm to 200 sccm into the chamber. Preferably, good results can be obtained under conditions using a chamber pressure of 1500 mT, an electrode power of 1100 W, a chuck temperature of 270 ° C., an O 2 gas of 3550 sccm flow rate and an N 2 gas of 150 sccm flow rate. At this time, the processing time is about 90 seconds, and the cured photoresist can be removed in the shortest time. However, using the ashing process only fatally cannot completely remove the cured photoresist. Therefore, after the ashing process, proceeding with the additional process using the organic mixed solvent proposed in the present invention can completely remove the cured photoresist (40). In addition, if the cured photoresist is removed using the organic mixture solvent after the ashing process, the cured photoresist, which could not be completely removed using only the organic mixture solvent during the added bake process, may be removed. have.
[표 1]TABLE 1
재작업 처리 방법에 따른 처리 시간Processing time according to how rework is handled
[표 2]TABLE 2
재작업 처리 방법에 따른 포토레지스트 종류별 처리 효과Effect of Photoresist Treatment on Rework Processing Methods
(○:처리 양호, ×:처리 불량, 괄호는 추가 베이크 처리시 효과)(○: Good treatment, X: Bad treatment, parenthesis is effective at the additional bake treatment)
표 1은 재작업 처리 방법에 따른 재작업 처리 시간을 보여주는 도표이고, 도 2는 재작업 처리 방법에 따른 포토레지스트 종류별 처리 효과를 보여주는 도표이다. 상기 포토레지스트 종류는 A, B, C 및 D 제품, 예를 들면, UV3, SEPR-402, SEPR-403S 및 SQM08A6 제품으로서 실험에 적용된 제품들이다.Table 1 is a chart showing the rework processing time according to the rework processing method, Figure 2 is a chart showing the effect of processing by photoresist type according to the rework processing method. The photoresist types are A, B, C and D products, for example, UV3, SEPR-402, SEPR-403S and SQM08A6 products applied in the experiment.
표 1에서 보는 바와 같이 상기 유기혼합용제를 사용하여 상기 경화된 포토레스트 제거시 처리 시간이 약 160초 소요된다. 그런, 상기 무기혼합용제를 사용하여 상기 경화된 포토레지스트 제거시 처리 시간이 약 2700초 소요된다. 이에 반하여 애싱 공정을 이용하여 상기 경화된 포토레지스트 제거시 약 90초면 처리가 가능하다. 처리 시간으로는 애싱 공정이 가장 빠르고 무기혼합용제를 사용할 때 가장 긴 처리 시간이 소요된다.As shown in Table 1, it takes about 160 seconds to remove the cured photorest using the organic mixed solvent. Such, using the inorganic mixed solvent takes about 2700 seconds of treatment time when removing the cured photoresist. In contrast, when the cured photoresist is removed using an ashing process, it is possible to process about 90 seconds. The treatment time is the fastest ashing process and the longest treatment time when using the inorganic mixed solvent.
그러나, 표 2에서 보는 바와 같이 상기 애싱 공정은 처리 시간이 가장 짧은 반면 상기 경화된 포토레지스트를 제거하는 과정에서 웨이퍼(wafer) 상에 파티클(particle)를 발생시키기 때문에 후속 공정에서 불량이 초래된다. 그러므로, 상기 애싱 공정을 단독으로 적용할 수가 없다. 상기 무기혼합용제는 모든 종류의 포토레지스트에 대해서 처리 효과가 양호하다. 추가 베이크 공정이 적용된 경우에도 상기 경화된 포토레지스트를 완전히 제거할 수 있다. 그러나, 상기 무기혼합용제는 처리 시간이 다른 처리 방법에 비해 가장 길어 생산성을 저하시키는 요인이 된다. 상기 유기혼합용제는 모든 포토레지스트에 대해서 처리 효과가 양호하다. 처리 시간도 상기 무기혼합용제보다 훨씬 짧다. 다만, 추가 베이크 공정이 적용된 상기 경화된 포토레지스트에 대해서는 처리 효과가 불량하다. 애싱 공정 후 유기혼합용제를 사용하는 경우에는 표 2에서는 보는 바와 같이 모든 면에서 양호한 처리 효과를 나타내고 있다. 처리 시간이 애싱 공정 처리 시간과 유기혼합용제 처리 시간을 합한 250초 정도로 각각의 처리 시간보다 더 소요되지만 상기 무기혼합용제를 사용하는 경우보다 약 11배나 짧은 시간에 처리할 수 있다. 따라서, 상기 경화된 포토레지스트를 완전히 깨끗히 처리하면서 상기 무기혼합용제를 사용한 처리 시간보다 더 짧은 시간에 처리할 수 있는 효과가 있다.However, as shown in Table 2, the ashing process has the shortest processing time while particles are generated on the wafer during the removal of the cured photoresist, resulting in a defect in subsequent processes. Therefore, the ashing process cannot be applied alone. The inorganic mixed solvent has a good treatment effect for all kinds of photoresists. Even when an additional bake process is applied, the cured photoresist may be completely removed. However, the inorganic mixed solvent is the longest treatment time compared to other treatment methods, which is a factor that lowers the productivity. The organic mixed solvent has a good treatment effect for all photoresists. The treatment time is also much shorter than the inorganic mixed solvent. However, a treatment effect is poor for the cured photoresist to which the additional bake process is applied. In the case of using the organic mixed solvent after the ashing step, as shown in Table 2, a good treatment effect is exhibited in all aspects. Although the treatment time is longer than the respective treatment time of about 250 seconds in which the ashing process treatment time and the organic mixed solvent treatment time are combined, the treatment time may be about 11 times shorter than when the inorganic mixed solvent is used. Therefore, there is an effect that can be processed in a shorter time than the treatment time using the inorganic mixed solvent while completely curing the cured photoresist.
본 발명은 측정 장비에 의해 경화된 포토레지스트를 애싱과 유기혼합용제를 이용하여 깨끗히 제거할 수 있는 효과가 있다.The present invention has the effect that the photoresist cured by the measuring equipment can be removed by using the ashing and organic mixed solvent.
그리고, 본 발명은 애싱과 유기혼합용제를 사용함으로써 무기혼합용제를 사용하는 것에 비해 포토레지스트를 제거하는 시간을 감소시키는 효과가 있다.In addition, the present invention has the effect of reducing the time to remove the photoresist compared to using the inorganic mixed solvent by using the ashing and the organic mixed solvent.
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2000
- 2000-02-29 KR KR1020000010135A patent/KR20010084812A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100710927B1 (en) * | 2003-06-20 | 2007-04-23 | 동경 엘렉트론 주식회사 | Treatment method and treatment system |
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