KR20010073747A - Depositing apparatus of tungsten silicide - Google Patents

Depositing apparatus of tungsten silicide Download PDF

Info

Publication number
KR20010073747A
KR20010073747A KR1020000002575A KR20000002575A KR20010073747A KR 20010073747 A KR20010073747 A KR 20010073747A KR 1020000002575 A KR1020000002575 A KR 1020000002575A KR 20000002575 A KR20000002575 A KR 20000002575A KR 20010073747 A KR20010073747 A KR 20010073747A
Authority
KR
South Korea
Prior art keywords
tungsten silicide
shower head
wafer
gas
deposition apparatus
Prior art date
Application number
KR1020000002575A
Other languages
Korean (ko)
Inventor
조찬형
최철환
Original Assignee
윤종용
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윤종용, 삼성전자 주식회사 filed Critical 윤종용
Priority to KR1020000002575A priority Critical patent/KR20010073747A/en
Publication of KR20010073747A publication Critical patent/KR20010073747A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/42—Silicides

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: An apparatus for depositing a tungsten silicide is provided to completely eliminate unnecessary tungsten silicide attached on a shower head, and deposit a tungsten silicide of the same thickness on a surface of a wafer. CONSTITUTION: A shower head(100) has a gas outlet on a lower surface thereof to deposit a tungsten silicide film. A wafer(104) is interposed between the shower head (100) and a susceptor(102). A gas(106) discharged from the shower head(100) is WF6 and SiH4. The tungsten silicide film is deposited on a surface of the wafer(104) by reaction of the gases. Here, in the shower head(100), an edge portion where the gas is discharged is curved. The gas outlet is curve in the portion according to a shape of the shower head(100). After the tungsten silicide film is deposited on the wafer surface by using a tungsten silicide deposition apparatus, a radio frequency is applied between the shower head(100) and the susceptor(102), so as to generate plasma. Because of the plasma generated between the shower head(100) and the susceptor(102), the tungsten silicide on the lower surface of the shower head(100) is removed.

Description

텅스텐 실리사이드 증착 장치{DEPOSITING APPARATUS OF TUNGSTEN SILICIDE}Tungsten silicide deposition apparatus {DEPOSITING APPARATUS OF TUNGSTEN SILICIDE}

본 발명은 반도체 제조 장치에 관한 것으로서, 보다 상세하게는 웨이퍼 표면에 텅스텐 실리사이드를 증착하기 위한 증착 장치에 관한 것이다.TECHNICAL FIELD The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to a deposition apparatus for depositing tungsten silicide on a wafer surface.

반도체 장치가 점차 고집적화 및 대량생산화 됨에 따라 반도체 장치를 생산하기 위한 기술이 자동화되고 있다. 특히 웨이퍼 표면에 텅스텐 실리사이드를 증착시키는 기술은 그 두께를 일정하여야 하므로 공정상 주의가 요구되는 매우 중요한 단위공정중의 하나이며, 통상적으로 이러한 텅스텐 실리사이드 증착공정에는 GENUS 사의 7000설비가 이용되고 있다.As semiconductor devices are increasingly integrated and mass-produced, technologies for producing semiconductor devices are being automated. In particular, the technique of depositing tungsten silicide on the wafer surface is one of the very important unit processes requiring attention in the process because the thickness of the tungsten silicide is to be constant, GENUS 7000 equipment is generally used for such a tungsten silicide deposition process.

도 1은 종래의 텅스텐 실리사이드 증착 장치의 개략도를 나타낸다.1 shows a schematic of a conventional tungsten silicide deposition apparatus.

도면을 참조하면, 텅스텐 실리사이드막을 증착하기 위한 개스분출구가 하면에 형성되어 있는 샤워헤드(1)와 서셉터(2) 사이에 웨이퍼(3)가 삽입되어 있다. 상기 샤워헤드(1)로부터 분출되는 개스(4)는 WF6와 SiH4로서, 상기 개스들의 반응에 의해 웨이퍼(3) 표면에 텅스텐 실리사이드(WSi)막이 증착된다. 이때, 상기 웨이퍼 (3) 표면에 텅스텐 실리사이드막이 증착되는 과정에서 개스분출구가 형성되어 있는 샤워헤드(1)의 하면에도 텅스텐 실리사이드막이 형성된다.Referring to the drawings, the wafer 3 is inserted between the shower head 1 and the susceptor 2 in which a gas ejection opening for depositing a tungsten silicide film is formed on the lower surface. The gas 4 ejected from the shower head 1 is WF 6 and SiH 4 , and a tungsten silicide (WSi) film is deposited on the surface of the wafer 3 by the reaction of the gases. At this time, the tungsten silicide film is also formed on the lower surface of the shower head 1 in which the gas ejection opening is formed in the process of depositing the tungsten silicide film on the surface of the wafer 3.

본 분야에서는, 통상적으로 대략 7장의 웨이퍼 표면에 텅스텐 실리사이드막을 증착한 뒤, RF(Radio Frequency)를 이용한 클리닝 공정을 실시하여 샤워헤드 (100)의 하면에 형성되어 있는 불필요한 텅스텐 실리사이드막을 제거한다. 그러나, 이러한 클리닝 공정시 도 1의 참조부호 "A"로 나타낸 모서리 영역의 텅스텐 실리사이드는 상기 RF 클리닝 공정시 완전히 제거되지 않고 잔류하게 된다. 또한, 상기 "A" 영역의 텅스텐 실리사이드는 RF 클리닝 공정시 완전히 제거되지 못한 잔류 텅스텐 실리사이드막을 제거하기 위하여 챔버(chamber) 분해후 배스(bath)에서 과산화수소(H2O2)를 이용하는 PM(Pre Maintenance) 처리 후에도 여전히 잔류하여 후속의 텅스텐 실리사이드막 증착시 웨이퍼 표면에 파티클로서 작용한다.In this field, a tungsten silicide film is generally deposited on the surface of approximately seven wafers, and then a cleaning process using RF (Radio Frequency) is performed to remove unnecessary tungsten silicide films formed on the bottom surface of the shower head 100. However, in this cleaning process, the tungsten silicide in the corner region indicated by reference numeral “A” of FIG. 1 remains without being completely removed during the RF cleaning process. In addition, the tungsten silicide in the "A" region may be removed even after a PM (Pre Maintenance) treatment using hydrogen peroxide (H2O2) in a bath after decomposition of the chamber to remove residual tungsten silicide film that was not completely removed during the RF cleaning process. It still remains and acts as a particle on the wafer surface during subsequent tungsten silicide film deposition.

또한, 종래에는 상기 샤워헤드(1)와 웨이퍼(3) 사이의 간격이 일정하여 개스 분출구로 인해 개스의 밀도가 낮은 웨이퍼(3) 가장자리 영역은 중앙부분에 비해 텅스텐 실리사이드막의 증착 두께가 낮아지는 문제점이 있다.In addition, conventionally, the spacing between the shower head 1 and the wafer 3 is constant, so that the gas thickness of the tungsten silicide film is lower in the edge region of the wafer 3 where the gas density is lower than that of the center portion. There is this.

따라서 본 발명의 목적은, 샤워헤드에 부착된 불필요한 텅스텐 실리사이드를 완전히 제거할 수 있는 텅스텐 증착 장치를 제공함에 있다.Accordingly, an object of the present invention is to provide a tungsten deposition apparatus capable of completely removing unnecessary tungsten silicide attached to a showerhead.

본 발명의 또 다른 목적은, 웨이퍼 표면에 동일한 두께의 텅스텐 실리사이드를 증착할 수 있는 텅스텐 증착 장치를 제공함에 있다.It is still another object of the present invention to provide a tungsten deposition apparatus capable of depositing tungsten silicide of the same thickness on a wafer surface.

상기 목적들을 달성하기 위하여 본 발명에서는, 웨이퍼 표면에 텅스텐 실리사이드를 증착시키기 위한 텅스텐 실리사이드 증착 장치에 있어서; 로딩된 웨이퍼의 가장자리 영역을 커버하는 부분이 곡선으로 이루어져 있는 샤워헤드부를 구비함을 특징으로 하는 텅스텐 실리사이드 증착 장치를 제공한다.In order to achieve the above objects, the present invention provides a tungsten silicide deposition apparatus for depositing tungsten silicide on a wafer surface; Provided is a tungsten silicide deposition apparatus, characterized in that the portion covering the edge region of the loaded wafer has a curved showerhead portion.

도 1은 종래의 텅스텐 실리사이드 증착 장치를 나타낸다.1 shows a conventional tungsten silicide deposition apparatus.

도 2는 본 발명의 제1실시예에 따른 텅스텐 실리사이드 증착 장치를 나타낸다.2 shows a tungsten silicide deposition apparatus according to a first embodiment of the present invention.

도 3은 본 발명의 제2실시예에 따른 텅스텐 실리사이드 증착 장치를 나타낸다.3 shows a tungsten silicide deposition apparatus according to a second embodiment of the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

100 : 샤워헤드 102 : 서셉터100: shower head 102: susceptor

104 : 웨이퍼 106: 개스104: wafer 106: gas

이하, 본 발명의 바람직한 실시예를 첨부한 도면을 참조하여 상세히 설명하고자 한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도 2는 본 발명의 제1실시예에 따른 텅스텐 실리사이드 증착 장치를 나타낸다.2 shows a tungsten silicide deposition apparatus according to a first embodiment of the present invention.

도면을 참조하면, 텅스텐 실리사이드막을 증착하기 위한 개스분출구(도시되지 않음)가 하면에 형성되어 있는 샤워헤드(100)와 서셉터(102) 사이에 웨이퍼 (104)가 삽입되어 있다. 상기 샤워헤드(100)로부터 분출되는 개스(106)는 WF6와 SiH4로서, 상기 개스들의 반응에 의해 웨이퍼(104) 표면에 텅스텐 실리사이드(WSi)막이 증착된다. 이때, 본 발명의 제1실시예에 따른 상기 샤워헤드(100)는 참조부호 "B"로 나타낸 것과 같이, 개스가 분출되는 가장자리 영역이 곡선형으로 이루어져 있다. 또한, 상기 이러한 샤워헤드(100)의 형태에 따라 개스분출구 또한 상기 "B" 영역에서는 곡선형으로 형성되어 있다.Referring to the drawings, a wafer 104 is inserted between the shower head 100 and the susceptor 102 in which a gas ejection opening (not shown) for depositing a tungsten silicide film is formed on the lower surface. The gas 106 ejected from the shower head 100 is WF 6 and SiH 4 , and a tungsten silicide (WSi) film is deposited on the surface of the wafer 104 by the reaction of the gases. At this time, the shower head 100 according to the first embodiment of the present invention has a curved edge region where the gas is ejected, as indicated by reference numeral "B". In addition, according to the shape of the shower head 100, the gas outlet is also formed in a curved shape in the "B" region.

상기와 같은 텅스텐 실리사이드 증착 장치를 이용하여 웨이퍼 표면에 텅스텐 실리사이드막을 증착한 뒤, 상기 샤워헤드(100)와 서셉터(102) 사이에 고주파인 RF(Radio Frequency)를 인가하여 플라즈마를 발생시킨다. 이처럼 샤워헤드(100)와 서셉터(102) 사이에 발생된 플라즈마에 의해 상기 샤워헤드(100) 하면의 텅스텐 실리사이드가 제거된다. 이때, 상기 샤워헤드(100)는 종래의 텅스텐 실리사이드가 빈번히 잔류하던 모서리 영역을 곡선형으로 형성함으로써 RF 클리닝시 샤워헤드(100) 하면의 불필요한 텅스텐 실리사이드를 완전히 제거할 수 있게 된다. 또한, 상기 개스분출구를 통해 분사되는 개스(106)가 "B" 영역에서는 웨이퍼(104)쪽을 향하게 되므로 개스배출구로 인해 웨이퍼 가장자리에 텅스텐 실리사이드막이 얇게 증착되는 종래의 문제점 또한 해소할 수 있다.After depositing a tungsten silicide film on the wafer surface using the tungsten silicide deposition apparatus as described above, plasma is generated by applying a high frequency RF (Radio Frequency) between the showerhead 100 and the susceptor 102. As such, tungsten silicide on the bottom surface of the shower head 100 is removed by the plasma generated between the shower head 100 and the susceptor 102. In this case, the shower head 100 may form a curved edge region in which the conventional tungsten silicide frequently remains, thereby completely removing unnecessary tungsten silicide under the shower head 100 during RF cleaning. In addition, since the gas 106 injected through the gas outlet is directed toward the wafer 104 in the "B" region, the conventional problem of thinly depositing a tungsten silicide film on the wafer edge due to the gas outlet may be solved.

도 3은 본 발명의 제2실시예에 따른 텅스텐 실리사이드 증착 장치를 나타낸다.3 shows a tungsten silicide deposition apparatus according to a second embodiment of the present invention.

도면을 참조하면, 텅스텐 실리사이드막을 증착하기 위한 개스분출구가 하면에 형성되어 있는 샤워헤드(200)와 서셉터(202) 사이에 웨이퍼(204)가 삽입되어 있다. 상기 샤워헤드(200)로부터 분출되는 개스(106)는 WF6와 SiH4로서, 상기 개스들의 반응에 의해 웨이퍼(204) 표면에 텅스텐 실리사이드(WSi)막이 증착된다.Referring to the drawings, the wafer 204 is inserted between the shower head 200 and the susceptor 202 having a gas ejection opening for depositing a tungsten silicide film. The gas 106 ejected from the shower head 200 is WF 6 and SiH 4 , and a tungsten silicide (WSi) film is deposited on the surface of the wafer 204 by the reaction of the gases.

본 발명의 제2실시예에 따른 상기 샤워헤드(200)는 상기 제1실시예에 도시되어 있는 샤워헤드(100)와는 달리 샤워헤드(200) 하면이 참조부호 "C"로 나타낸 것과 같이 전체적으로 오목한 아치형으로 형성되어 있다. 따라서, 텅스텐 실리사이드막 형성을 위한 개스가 상기 제1실시예에서 보다 웨이퍼 쪽으로 분사되어 웨이퍼 (202) 전면 상부에 동일한 두께의 텅스텐 실리사이드막을 증착시킬 수 있다.Unlike the shower head 100 shown in the first embodiment, the shower head 200 according to the second embodiment of the present invention is generally concave as shown by reference numeral “C”. It is arched. Thus, a gas for forming a tungsten silicide film can be injected toward the wafer than in the first embodiment to deposit a tungsten silicide film of the same thickness over the entire surface of the wafer 202.

또한, 상기 텅스텐 실리사이드막 증착공정을 완료한 후, 상기 샤워헤드(300)를 클리닝하기 위한 RF 클리닝 공정시 불필요한 텅스텐 실리사이드막이 완전히 제거된다.In addition, after the tungsten silicide film deposition process is completed, unnecessary tungsten silicide film is completely removed during the RF cleaning process for cleaning the shower head 300.

상술한 바와 같이 본 발명에서는, 웨이퍼 표면에 텅스텐 실리사이드막을 증착하기 위한 텅스텐 장치의 샤워헤드에 있어서, 개스가 분출되는 면을 곡선형으로 형성한다. 그 결과, 웨이퍼 표면에 동일한 두께의 텅스텐 실리사이드막을 형성할 수 있으며, RF 클리닝시 샤워헤드 하면에 존재하는 불필요한 텅스텐 실리사이드를완전히 제거할 수 있다.As described above, in the present invention, in the shower head of the tungsten device for depositing a tungsten silicide film on the wafer surface, the surface on which the gas is ejected is formed in a curved shape. As a result, a tungsten silicide film having the same thickness can be formed on the wafer surface, and unnecessary tungsten silicide present on the lower surface of the showerhead during RF cleaning can be completely removed.

Claims (3)

웨이퍼 표면에 텅스텐 실리사이드를 증착시키기 위한 텅스텐 실리사이드 증착 장치에 있어서;12. A tungsten silicide deposition apparatus for depositing tungsten silicide on a wafer surface; 로딩된 웨이퍼의 가장자리 영역을 커버하는 부분이 곡선으로 이루어져 있는 샤워헤드부를 구비함을 특징으로 하는 텅스텐 실리사이드 증착 장치.Tungsten silicide deposition apparatus, characterized in that the portion covering the edge region of the loaded wafer has a curved shower head portion. 제 1항에 있어서, 상기 샤워헤드부의 하면이 가장자리에서 중앙부분으로 갈수록 높아지는 아치형임을 특징으로 하는 텅스텐 실리사이드 증착 장치.The tungsten silicide deposition apparatus according to claim 1, wherein the lower surface of the shower head portion is arcuate from the edge toward the center portion. 제 1항 또는 제 2항에 있어서, 상기 샤워헤드부의 하면에 텅스텐 실리사이드를 형성하기 위한 개스가 분출되는 개스분출구를 구비함을 특징으로 하는 텅스텐 실리사이드 증착 장치.The tungsten silicide deposition apparatus according to claim 1 or 2, further comprising a gas ejection opening through which a gas for forming tungsten silicide is ejected on a lower surface of the shower head portion.
KR1020000002575A 2000-01-20 2000-01-20 Depositing apparatus of tungsten silicide KR20010073747A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020000002575A KR20010073747A (en) 2000-01-20 2000-01-20 Depositing apparatus of tungsten silicide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020000002575A KR20010073747A (en) 2000-01-20 2000-01-20 Depositing apparatus of tungsten silicide

Publications (1)

Publication Number Publication Date
KR20010073747A true KR20010073747A (en) 2001-08-03

Family

ID=19639902

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000002575A KR20010073747A (en) 2000-01-20 2000-01-20 Depositing apparatus of tungsten silicide

Country Status (1)

Country Link
KR (1) KR20010073747A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10480073B2 (en) * 2013-04-07 2019-11-19 Shigemi Murakawa Rotating semi-batch ALD device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10480073B2 (en) * 2013-04-07 2019-11-19 Shigemi Murakawa Rotating semi-batch ALD device

Similar Documents

Publication Publication Date Title
CN110391122B (en) Substrate processing apparatus and substrate processing method
TWI809154B (en) Film forming apparatus and film forming method
EP1672093B1 (en) Film-forming apparatus and film-forming method
JP3942672B2 (en) Substrate processing method and substrate processing apparatus
US5075256A (en) Process for removing deposits from backside and end edge of semiconductor wafer while preventing removal of materials from front surface of wafer
KR100355321B1 (en) Film forming method and apparatus
US7484513B2 (en) Method of forming titanium film by CVD
KR100331543B1 (en) Method for cleaning inside of chamber by using radio frequency plasma
JP2003197615A (en) Plasma treatment apparatus and method for cleaning the same
US20090071404A1 (en) Method of forming titanium film by CVD
JPH10106974A (en) Method for forming continuously titanium film and titanium nitride film
US9216609B2 (en) Radical etching apparatus and method
KR0181728B1 (en) Cleaning method for semiconductor wafer processing apparatus
JPH1143771A (en) Cleaning method for cvd device
WO1999028955A3 (en) Chemical vapor deposition of titanium on a wafer comprising an in-situ precleaning step
JP4151308B2 (en) Gas introduction method for processing equipment
KR100262883B1 (en) Plasma cleaning method
KR20010073747A (en) Depositing apparatus of tungsten silicide
JPH07201738A (en) Pretreatment method for thin-film formation, and formation method for thin film
KR100517550B1 (en) Atomic layer deposition apparatus
JPH04345022A (en) Blanket metal cvd device
KR20150035247A (en) Showerhead
TWI828187B (en) Etching method and plasma processing apparatus
JP4312291B2 (en) Film formation method by plasma CVD
KR20030027505A (en) Semiconductor processing apparatus having improved exhausting structure

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination