KR20010066112A - a manufacturing method for wires of semiconductor devices - Google Patents

a manufacturing method for wires of semiconductor devices Download PDF

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Publication number
KR20010066112A
KR20010066112A KR1019990067696A KR19990067696A KR20010066112A KR 20010066112 A KR20010066112 A KR 20010066112A KR 1019990067696 A KR1019990067696 A KR 1019990067696A KR 19990067696 A KR19990067696 A KR 19990067696A KR 20010066112 A KR20010066112 A KR 20010066112A
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South Korea
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layer
tungsten layer
tungsten
oxide film
etching
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KR1019990067696A
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Korean (ko)
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KR100373706B1 (en
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박태희
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황인길
아남반도체 주식회사
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Priority to KR10-1999-0067696A priority Critical patent/KR100373706B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE: A method for forming an interconnect is to form an oxide layer on a tungsten layer as a plug and to etch the same so as to planarize the tungsten layer, thereby preventing increase of contact resistance. CONSTITUTION: A lower interconnect(12) is formed on a semiconductor substrate(11). An interlayer dielectric(13) is formed thereon to form a via hole for exposing the lower interconnect. A barrier layer(14) is formed thereon where a tungsten layer as a plug is formed. On the resultant structure is deposited an oxide layer and then removed without a portion on the via hole. The oxide layer and the tungsten layer are entirely etched to expose the barrier layer, using an etch gas with etch selectivity to the oxide layer and the tungsten layer, thereby planarizing the upper portion of the tungsten layer. An upper interconnect such as Al is formed on the tungsten layer and the barrier layer.

Description

반도체 소자의 배선 형성 방법{a manufacturing method for wires of semiconductor devices}Wire forming method of a semiconductor device {a manufacturing method for wires of semiconductor devices}

본 발명은 반도체 소자의 배선 형성 방법에 관한 것이다.The present invention relates to a wiring forming method of a semiconductor device.

최근, 반도체 집적 회로에서는 그 크기가 더욱 감소됨에 따라, 집적 회로에서의 배선을 다층화하고 이 배선들을 연결하는 다층 배선 방법이 주로 사용되고 있다. 일반적으로 배선들을 연결하기 위해 하부 배선층 상부에 접촉구나 비아(via) 홀을 형성하고 스퍼터링과 같은 방법으로 알루미늄과 같은 금속을 증착하여 상부 배선층을 형성함으로써 배선을 완성한다. 그러나, 이러한 스퍼터링 방법에 의해 알루미늄과 같은 금속을 증착할 경우 접촉구 내부에 금속이 완전히 메워지지 않아 배선 연결이 제대로 이루어지지 않을 뿐만 아니라 접촉구나 비아 홀 내에서 스텝커버리지(step coverage)가 불량하게 되어 소자의 수율이 감소하게 된다.In recent years, as the size of semiconductor integrated circuits is further reduced, a multilayer wiring method for multilayering wirings in the integrated circuit and connecting the wirings is mainly used. In general, a contact or via hole is formed on the lower wiring layer to connect the wirings, and the upper wiring layer is formed by depositing a metal such as aluminum to form an upper wiring layer by a method such as sputtering. However, when the metal such as aluminum is deposited by the sputtering method, the metal is not completely filled in the contact hole, and thus the wiring is not properly connected, and the step coverage is poor in the contact or the via hole. The yield of the device is reduced.

이러한 이유로 인하여 반도체 소자의 고집적화에 따른 반도체 소자의 배선 연결을 위한 물질로서 접촉구나 비아 홀에서 양호한 스텝 커버리지를 갖는 텅스텐을 이용하여 금속 플러그를 이용하게 되었다.For this reason, metal plugs are used by using tungsten having good step coverage in contacts or via holes as a material for wiring connection of semiconductor devices due to high integration of semiconductor devices.

그러면, 첨부한 도면을 참조하여 종래의 텅스텐 플러그 형성 방법에 대해 설명한다.Next, a conventional tungsten plug forming method will be described with reference to the accompanying drawings.

먼저, 도 1a에 도시한 바와 같이 반도체 소자(도시하지 않음)를 포함하는 반도체 기판(1) 위에 하부 배선층(2)을 형성한 후, 그 위에 층간 절연막(inter-metal dielectric)(3)을 증착하고 패터닝하여 하부 배선층(2)을 드러내는 비아 홀(31)을 형성한다.First, as shown in FIG. 1A, a lower wiring layer 2 is formed on a semiconductor substrate 1 including a semiconductor element (not shown), and then an inter-metal dielectric 3 is deposited thereon. And the via hole 31 exposing the lower wiring layer 2 is formed.

다음, 도 1b에 도시한 바와 같이 배리어층(4)을 스퍼터링(sputtering) 방법으로 적층한 후, 텅스텐층(5)을 증착한다. 여기서, 텅스텐층(5)은 비아 홀(31)이 형성되어 있는 부분에서 아래쪽으로 들어간 골 형태를 이루고 있다.Next, as shown in FIG. 1B, the barrier layer 4 is laminated by the sputtering method, and the tungsten layer 5 is deposited. Here, the tungsten layer 5 has a valley shape that goes downward from the portion where the via hole 31 is formed.

다음, 도 1c에 도시한 바와 같이 텅스텐층(5)을 전면 식각(etch back)하는데, 텅스텐층(5)의 높이가 배리어층(4)과 같아지도록 하여 텅스텐 플러그를 형성한다.Next, as shown in FIG. 1C, the tungsten layer 5 is etched back, so that the tungsten layer 5 has the same height as the barrier layer 4 to form a tungsten plug.

다음, 도 1d에 도시한 바와 같이 알루미늄(Al) 따위의 금속 물질을 스퍼터링하여 상부 배선층(6)을 적층한다.Next, as illustrated in FIG. 1D, the upper wiring layer 6 is stacked by sputtering a metal material such as aluminum (Al).

이와 같은 방법에서는 텅스텐층(5)을 전면 식각할 때 텅스텐층(5)의 하부막인 배리어층(4)을 드러내기 위해 과도 식각(over etch)을 하게 된다. 따라서, 비아 홀(31)에 채워진 텅스텐층(5)은 비아 홀(31) 부분이 우묵하게 들어가 플러그 리세스(plug recess)가 발생하게 되고 그 상부에 상부 배선층(6)을 적층하였을 때, 상부 배선층(6)도 비아 홀(31) 부분에서 우묵하게 된다. 심한 경우에는 도 1d에 도시한 바와 같이 빈 공간(61)이 생길 수도 있다. 이는 상부 배선층(6)과 그 위의 금속막 사이의 접촉 저항을 증가시키는 원인이 되는데, 이에 따라 직류 파라미터(DC parameter) 측정시 저항이 기준치에서 벗어나므로 칩(chip)이 작동하지 않게 된다.In such a method, when the tungsten layer 5 is fully etched, an overetch is performed to reveal the barrier layer 4, which is a lower layer of the tungsten layer 5. Therefore, the tungsten layer 5 filled in the via hole 31 has a recessed portion of the via hole 31 so that a plug recess occurs, and when the upper wiring layer 6 is stacked thereon, The wiring layer 6 is also recessed in the via hole 31. In severe cases, as shown in FIG. 1D, an empty space 61 may be created. This causes the contact resistance between the upper wiring layer 6 and the metal film thereon to increase. As a result, when the DC parameter is measured, the resistance deviates from the reference value, thereby preventing the chip from operating.

본 발명의 과제는 반도체 소자의 불량이 발생하는 것을 방지하는 것이다.An object of the present invention is to prevent a defect of a semiconductor element from occurring.

도 1a 내지 도 1d는 종래 기술에 따른 반도체 소자의 배선 형성 과정을 도시한 것이고,1A to 1D illustrate a process of forming a wiring of a semiconductor device according to the prior art,

도 2a 내지 도 2e는 본 발명에 따른 반도체 소자의 배선 형성 과정을 도시한 것이다.2A to 2E illustrate a process of forming a wiring of a semiconductor device according to the present invention.

이러한 과제를 해결하기 위해 본 발명에서는 접촉구를 채우는 텅스텐층 상부에 산화막 패턴을 형성한 다음, 산화막 및 텅스텐층을 전면 식각한다.In order to solve this problem, in the present invention, an oxide film pattern is formed on the tungsten layer filling the contact hole, and then the oxide film and the tungsten layer are etched entirely.

본 발명에 따른 반도체 소자의 배선 형성 방법에서는 제1 배선을 드러내는 접촉구를 가지고 있는 절연막을 형성하고, 그 상부에 배리어층을 형성한다. 다음, 배리어층 상부에 텅스텐층을 증착하여 접촉구를 채우고, 그 위에 산화막을 증착한다. 산화막을 패터닝하여 접촉구 상부에만 남긴 후, 산화막 및 텅스텐층을 함께 전면 식각하여 배리어층을 드러낸다. 이어, 텅스텐층 및 배리어층 위에 도전체층을 형성한다.In the wiring formation method of the semiconductor element which concerns on this invention, the insulating film which has the contact hole which exposes a 1st wiring is formed, and a barrier layer is formed in the upper part. Next, a tungsten layer is deposited on the barrier layer to fill the contact hole, and an oxide film is deposited thereon. After the oxide film is patterned and left only on the contact hole, the oxide layer and the tungsten layer are etched together to expose the barrier layer. Subsequently, a conductor layer is formed on the tungsten layer and the barrier layer.

여기서, 전면 식각시 산화막과 텅스텐층에 대해 식각 선택비를 가지는 기체를 사용하는 것이 바람직하며, 기체의 산화막에 대한 식각비가 텅스텐층에 대한 식각비보다 큰 것이 좋다.In this case, it is preferable to use a gas having an etching selectivity with respect to the oxide film and the tungsten layer when the entire surface is etched, and the etching ratio of the gas with respect to the oxide film may be larger than that of the tungsten layer.

전면 식각에 사용되는 식각 기체는 SF6를 포함하는 것을 이용할 수 있다.The etching gas used for the front side etching may include one containing SF 6 .

본 발명에서는 플러그로 사용되는 텅스텐층 위에 산화막을 형성하고 텅스텐층과 산화막에 대해 식각 선택비를 가지는 기체를 이용하여 전면 식각하므로 접촉구 내의 텅스텐층 상부가 평탄하게 된다. 따라서, 그 위의 도전체층들 사이에 접촉이 좋아지므로 접촉 저항이 증가되는 것을 막을 수 있고, 이에 따라 불량의 발생을 방지할 수 있다.In the present invention, since the oxide film is formed on the tungsten layer used as the plug, and the entire surface is etched using a gas having an etching selectivity with respect to the tungsten layer and the oxide film, the top of the tungsten layer in the contact hole is flat. Thus, the contact between the conductor layers thereon is improved, so that the contact resistance can be prevented from increasing, thereby preventing the occurrence of a defect.

그러면 첨부한 도면을 참고로 하여 본 발명에 따른 반도체 소자의 배선 형성 방법에 대하여 상세히 설명한다.Next, a wiring forming method of a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings.

먼저 도 2a에 도시한 바와 같이 반도체 소자(도시하지 않음)를 포함하는 기판(11) 위에 TiN(질화 티타늄)막(121)/Al(알루미늄)막(122)/TiN막(123)의 3중층으로 이루어진 하부 배선층(12)을 형성한다. 여기서는, 하부 배선층(12)을 TiN막(121)/Al막(122)/TiN막(123)의 삼중층으로 형성하였는데, TiN막(121, 123)은 접촉 특성을 좋게 하기 위한 것으로 TiN막(121, 123) 대신 Ti막이나 Ti 화합물막 또는 Ti막/TiN막이나 Ti막/Ti 화합물막의 이중층으로 형성할 수도 있다. 이어, 하부 배선층(12)의 상부에 층간 절연막(13)을 1.5μm 정도의 두께로 증착하고 패터닝하여 하부 배선층(12)을 드러내는 비아 홀(131)을 형성한다.First, as shown in FIG. 2A, a triple layer of a TiN (titanium nitride) film 121 / Al (aluminum) film 122 / TiN film 123 on a substrate 11 including a semiconductor device (not shown). A lower wiring layer 12 is formed. Here, the lower wiring layer 12 is formed of a triple layer of the TiN film 121 / Al film 122 / TiN film 123. The TiN films 121 and 123 are used to improve contact characteristics. Instead of 121 and 123, a double layer of a Ti film, a Ti compound film, or a Ti film / TiN film or a Ti film / Ti compound film may be formed. Subsequently, an interlayer insulating layer 13 is deposited on the lower wiring layer 12 to a thickness of about 1.5 μm and patterned to form a via hole 131 exposing the lower wiring layer 12.

다음, 도 2b에 도시한 바와 같이 Ti막/TiN막의 이중막(141, 142)으로 이루어진 배리어층(14)을 1,000~1,500Å 정도의 두께로 스퍼터링하고, 화학 기상 증착법을 이용하여 텅스텐층(15)을 증착한 후, 그 위에 산화막(16)을 증착한다.Next, as shown in FIG. 2B, the barrier layer 14 including the double films 141 and 142 of the Ti film / TiN film is sputtered to a thickness of about 1,000 to 1,500 kPa, and the tungsten layer 15 is formed by chemical vapor deposition. ) And then deposit an oxide film 16 thereon.

이어, 도 2c에 도시한 바와 같이 산화막(16) 상부에 감광막 패턴(17)을 형성한 다음, CF4를 함유한 식각 기체로 산화막(16)을 식각한다.Subsequently, as illustrated in FIG. 2C, the photoresist pattern 17 is formed on the oxide film 16, and the oxide film 16 is etched with an etching gas containing CF 4 .

다음, 감광막 패턴(17)을 제거한다.Next, the photoresist pattern 17 is removed.

다음, 도 2d에 도시한 바와 같이 산화막(16) 및 텅스텐층(15)을 전면 식각하여 텅스텐층(15)의 높이가 배리어층(14)과 같아지도록 한다. 이때, 산화막(16) 및 텅스텐층(15)은 함께 식각하며, 산화막(16)과 텅스텐층(15)에 대하여 식각 선택비를 가지는 기체를 이용하는데, 산화막(16)에 대한 식각비가 텅스텐층(15)에 대한 식각비보다 크도록 한다. 여기서, 식각 기체는 SF6를 포함할 수 있다.Next, as shown in FIG. 2D, the oxide film 16 and the tungsten layer 15 are etched to the entire surface so that the height of the tungsten layer 15 is the same as the barrier layer 14. At this time, the oxide layer 16 and the tungsten layer 15 are etched together, and a gas having an etching selectivity with respect to the oxide layer 16 and the tungsten layer 15 is used. It should be larger than the etching ratio for 15). Here, the etching gas may include SF 6 .

이와 같이 하면, 산화막(16) 하부의 텅스텐층(15)은 산화막(16) 식각 후 식각되므로 움푹 패일 우려가 없다.In this case, since the tungsten layer 15 under the oxide film 16 is etched after the oxide film 16 is etched, there is no fear of pitting.

다음, 도 2e에 도시한 바와 같이 알루미늄과 같은 금속을 스퍼터링하여 상부 배선층(18)을 형성한다.Next, as shown in FIG. 2E, the upper wiring layer 18 is formed by sputtering a metal such as aluminum.

이와 같이, 본 발명에서는 플러그로 사용되는 텅스텐층(15)이 평탄하게 되어 상부 배선층(18) 및 그 위의 금속막 사이에 접촉이 좋아지므로 접촉 저항이 증가하는 문제를 방지할 수 있다.As described above, in the present invention, the tungsten layer 15 used as the plug is flattened so that the contact between the upper wiring layer 18 and the metal film thereon is improved, thereby preventing the problem of increasing the contact resistance.

본 발명에서는 플러그로 사용되는 텅스텐층 상부에 산화막을 형성한 다음 전면 식각한다. 따라서, 텅스텐층이 평탄하게 되어 접촉 저항의 증가를 방지하므로불량이 발생하는 것을 막을 수 있다.In the present invention, an oxide film is formed on the tungsten layer used as a plug, and then etched entirely. Therefore, the tungsten layer becomes flat to prevent an increase in contact resistance, thereby preventing the occurrence of a defect.

Claims (4)

제1 배선을 드러내는 접촉구를 가지고 있는 절연막을 형성하는 단계,Forming an insulating film having a contact hole for exposing the first wiring, 상기 절연막을 덮는 배리어층을 형성하는 단계,Forming a barrier layer covering the insulating layer; 상기 배리어층 상부에 텅스텐층을 증착하여 상기 접촉구를 채우는 단계,Depositing a tungsten layer on the barrier layer to fill the contact hole; 상기 텅스텐층 위에 산화막을 증착하는 단계,Depositing an oxide film on the tungsten layer, 상기 산화막을 패터닝하여 상기 접촉구 상부에만 남기는 단계,Patterning the oxide film to leave only the contact hole; 상기 산화막 및 상기 텅스텐층을 함께 전면 식각하여 상기 배리어층을 드러내는 단계, 그리고Etching the oxide film and the tungsten layer together to expose the barrier layer, and 상기 텅스텐층 및 배리어층 위에 도전체층을 형성하는 단계Forming a conductor layer on the tungsten layer and the barrier layer 를 포함하는 반도체 소자의 배선 형성 방법.Wire forming method of a semiconductor device comprising a. 제1항에서,In claim 1, 상기 전면 식각시 상기 산화막과 상기 텅스텐층에 대해 식각 선택비를 가지는 기체를 사용하는 반도체 소자의 배선 형성 방법.And a substrate having an etch selectivity with respect to the oxide film and the tungsten layer during the front surface etching. 제2항에서,In claim 2, 상기 기체의 상기 산화막에 대한 식각비가 상기 텅스텐층에 대한 식각비보다 큰 반도체 소자의 배선 형성 방법.And an etching ratio of the gas to the oxide film is greater than an etching ratio to the tungsten layer. 제3항에서,In claim 3, 상기 전면 식각에 사용되는 식각 기체는 SF6를 포함하는 반도체 소자의 배선 형성 방법.The etching gas used for the front side etching includes SF 6 .
KR10-1999-0067696A 1999-12-31 1999-12-31 a manufacturing method for wires of semiconductor devices KR100373706B1 (en)

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JPH05299397A (en) * 1992-04-21 1993-11-12 Sony Corp Forming method for metal plug
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* Cited by examiner, † Cited by third party
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