KR20010065673A - Method for milling cantilever probe tip of scanning probe microscope - Google Patents

Method for milling cantilever probe tip of scanning probe microscope Download PDF

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KR20010065673A
KR20010065673A KR1019990065593A KR19990065593A KR20010065673A KR 20010065673 A KR20010065673 A KR 20010065673A KR 1019990065593 A KR1019990065593 A KR 1019990065593A KR 19990065593 A KR19990065593 A KR 19990065593A KR 20010065673 A KR20010065673 A KR 20010065673A
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South Korea
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tip
cantilever probe
ion beam
probe tip
focused ion
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KR1019990065593A
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Korean (ko)
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김중정
김원
이태권
홍영아
김호정
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박종섭
주식회사 하이닉스반도체
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Priority to KR1019990065593A priority Critical patent/KR20010065673A/en
Publication of KR20010065673A publication Critical patent/KR20010065673A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/08—Probe characteristics
    • G01Q70/10—Shape or taper
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
    • G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
    • G01Q70/16—Probe manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Length Measuring Devices With Unspecified Measuring Means (AREA)

Abstract

PURPOSE: A method for machining a cantilever probe tip of a scanning probe microscope is provided to machine the cantilever probe tip like a needle by using a focused ion beam equipment but not using any additional software for obtaining a high aspect ratio, thereby analyzing a deep trench or a lower part of a contact hole as well as a plane surface. CONSTITUTION: A method for machining a cantilever probe tip of a scanning probe microscope includes the steps of coating metal ions by a predetermined thickness on a cantilever probe tip, mounting the cantilever probe tip(10) on a focused ion beam equipment and tilting the cantilever probe tip by an end angle to obtain for setting a fine machining area(20), removing the fine machining area set by the focused ion beam and rotating the tip by a predetermined angle with respect to a shaft Z perpendicular to a plane surface, setting a new fine machining area, and repeating the third and fourth steps until the tip rotates by 360°.

Description

탐침원자현미경의 캔틸레버 프로브 팁 가공 방법{METHOD FOR MILLING CANTILEVER PROBE TIP OF SCANNING PROBE MICROSCOPE}METHOD FOR MILLING CANTILEVER PROBE TIP OF SCANNING PROBE MICROSCOPE}

본 발명은 탐침원자현미경 캔틸레버 프로브 팁 가공 방법에 관한 것으로서, 보다 상세하게는 일반적인 모양의 탐침원자현미경(Scanning Probe Microscope ;SPM) 캔틸레버 프로브 팁을 부가적인 소프트웨어의 사용없이 FIB(Focused Ion Beam) 장비를 이용하여 바늘타입(needlelike)으로 가공하여 고에스펙트율(high aspect ratio)을 갖도록 함으로써 평면시편 뿐만 아니라 깊은 트렌치, 콘택홀 하부 등을 분석할 수 있도록 한 탐침원자현미경 캔틸레버 프로브 팁 가공 방법에 관한 것이다.The present invention relates to a method for processing a probe atom microscope cantilever probe tip, and more specifically, a scanning probe microscope (SPM) cantilever probe tip having a general shape without using additional software. The method relates to a probe atomic force microscope cantilever probe tip processing method for analyzing not only flat specimens but also deep trenches, contact holes, and the like by having a high aspect ratio by processing into a needle type using a needle-like method. .

요즈음 반도체 분야는 보다 높은 처리 속도와 고집적화를 추구하고 있으며 이러한 추세에 맞추어 반도체장치의 분석장비로써 높은 해상도를 위한 분석장비가 요구되고 있다. 특히 높은 공간 분해능 분석장비의 하나로써 탐침원자현미경(Scanning Probe Microscope ; SPM)이 상용화되고 있다.These days, the semiconductor field is pursuing higher processing speed and higher integration, and according to this trend, analytical equipment for high resolution is required as an analytical device for semiconductor devices. In particular, as one of high spatial resolution analysis equipment, Scanning Probe Microscope (SPM) has been commercialized.

이 탐침원자현미경의 종류로는 전자의 터널링(Tunneling) 현상을 이용한 STM(Scanning Tunneling Microscope)과 원자간의 Van der Waals Force를 이용한 AFM(Atomic Force Microscope), Magnetic Force를 이용한 MFM(Magnetic Force Microscope) 등 다양한 SPM(Scanning Probe Microscope) 계열이 있으며 시료의 표면구조(Topography), 분광, 표면조도(surface roughness), 표면을 구성하는 원자 상태 등을 분석할 수 있는 분석장비로써 주로 연구되고 상용화되고 있다.The types of probe atomic force microscopes include STM (Scanning Tunneling Microscope) using electron tunneling phenomenon, AFM (Atomic Force Microscope) using Van der Waals Force between atoms, MFM (Magnetic Force Microscope) using magnetic force, etc. There are various SPM (Scanning Probe Microscope) series, and it is mainly researched and commercialized as an analytical device that can analyze the topography, spectroscopy, surface roughness, and atomic state of surface.

이러한 탐침원자현미경의 반도체 공정에서의 응용분야는 초기에는 박막공정(Thin film process)에 한정적으로 사용되었으나 최근에는 응용범위가 크게 확대되어 초미세 패턴을 얻기 위한 사진공정(Lithography)과 식각공정(etching)과 세정공정(cleaning)에서의 표면분석, 반도체장치의 도판트(dopant) 분석 등에 이용되고 있다.The field of application of the probe atomic force microscope in the semiconductor process was initially limited to the thin film process, but in recent years, the application range has been greatly expanded, so that the photolithography and etching process to obtain the ultra-fine pattern And surface analysis in cleaning processes and dopant analysis of semiconductor devices.

이런 탐침원자현미경(Scanning Probe Microscope) 분석장비에서 시편을 기계적으로 스캐닝하여 시료표면의 평균조도, 3차원 이미지 등 시료 표면의 정보를 얻는 가장 중요한 부품인 캔틸레버 프로브 팁(cantilever probe tip)은 일반적으로 피라미드 모양의 팁이나 혹은 콘 모양의 팁으로 이루어진다.The cantilever probe tip, which is the most important component that mechanically scans the specimen in such a scanning probe microscope microscope and obtains information on the surface of the sample, such as average roughness and three-dimensional image, is generally pyramid. Consists of a tip or cone tip.

도 1은 일반적인 탐침원자현미경의 캔틸레버 프로브 팁을 나타낸 도면이다.1 is a view showing a cantilever probe tip of a conventional probe atomic force microscope.

여기에 도시된 탐침원자현미경(Scanning Probe Microscope) 분석장비의 캔틸레버 프로브 팁의 외형은 피라미드 모양으로 형성되어 있다.The shape of the cantilever probe tip of the scanning probe microscope shown here is shaped like a pyramid.

이와 같이 피라미드 모양이나 콘 모양의 팁으로서 콘택이나 트렌치 구조 등이 있는 반도체장치의 시편에 적용하기에는 에스펙트율이 낮아 에스펙트율이 높은 팁이 요구되고 있다.As described above, in order to be applied to a specimen of a semiconductor device having a contact or trench structure as a pyramid-shaped or cone-shaped tip, a tip having a low aspect ratio and a high aspect ratio is required.

그런데, 고에스펙트율을 갖는 팁은 고가일 뿐만 아니라 FIB로 가공하기 위해서는 부가적인 원형으로 연삭하기 위한 소프트웨어가 필요하기 때문에 고에스펙트율을 갖는 팁을 설치하기 위해서는 부가적인 비용이 많이 드는 문제점이 있다.However, a tip having a high aspect ratio is expensive and additionally expensive to install a tip having a high aspect ratio is required because software for grinding in an additional circle is required for processing with FIB. have.

본 발명은 상기와 같은 문제점을 해결하기 위해 창작된 것으로서, 본 발명의 목적은 일반적인 모양의 탐침원자현미경(Scanning Probe Microscope ; SPM) 캔틸레버 프로브 팁을 부가적인 소프트웨어의 사용없이 반도체 웨이퍼 집적 회로의 표면분석, 미세가공, 집적회로의 수정, 마스크의 수정, 그리고 결함분석 등에 사용되는 집속이온빔(FIB : Focused Ion Beam) 장비를 이용하여 바늘타입(needlelike)으로가공하여 고에스펙트율을 갖도록 함으로써 평면시편 뿐만 아니라 깊은 트렌치, 콘택홀 하부 등을 분석할 수 있도록 한 탐침원자현미경 캔틸레버 프로브 팁 가공 방법을 제공함에 있다.SUMMARY OF THE INVENTION The present invention was made to solve the above problems, and an object of the present invention is to analyze a surface of a semiconductor wafer integrated circuit by using a scanning probe microscope (SPM) cantilever probe tip of a general shape without using additional software. By using a focused ion beam (FIB) device used for microfabrication, integrated circuit correction, mask correction, and defect analysis, the needle-like processing is performed to have a high aspect ratio. It also provides a probe atomic force microscopy cantilever probe tip processing method for analyzing deep trenches, contact hole bottoms, and the like.

도 1은 일반적인 탐침원자현미경의 캔틸레버 프로브 팁을 나타낸 도면이다.1 is a view showing a cantilever probe tip of a conventional probe atomic force microscope.

도 2는 집속이온빔 장비에서 미세가공하기 위해 캔틸레버 프로브 팁을 틸팅시킨 상태를 나타낸 도면이다.2 is a view illustrating a state in which the cantilever probe tip is tilted for microfabrication in the focused ion beam apparatus.

도 3은 본 발명에 의해 가공된 탐침원자현미경의 캔틸레버 프로브 팁을 나타낸 도면이다.3 is a view showing the cantilever probe tip of the probe atomic force microscope processed by the present invention.

- 도면의 주요부분에 대한 부호의 설명 --Explanation of symbols for the main parts of the drawings-

10 : 팁 20 : 미세가공영역10 Tip 20 Micro Machining Area

상기와 같은 목적을 실현하기 위한 본 발명은The present invention for realizing the above object

집속이온빔 장비를 사용하여 가공하는 탐침원자현미경의 캔틸레버 프로브 팁 가공 방법에 있어서,In the method of processing the cantilever probe tip of the probe atomic force microscope to be processed using a focused ion beam equipment,

(a) 캔틸레버 프로브 팁에 일정두께의 금 이온을 코팅하는 단계와,(a) coating a predetermined thickness of gold ions on the cantilever probe tip,

(b) 집속이온빔 장비에 캔틸레버 프로브 팁을 장착한 후 최종 구하고자 하는 팁의 끝각에 따라 틸트시켜 미세가공 영역을 설정하는 단계와,(b) mounting the cantilever probe tip to the focused ion beam apparatus and setting the micromachining area by tilting the tip according to the tip angle of the tip to be finally obtained;

(c) 집속이온빔으로 설정된 미세가공 영역을 제거한 후 팁을 평면에 수직한 Z축을 중심으로 일정각도 회전시키는 단계와,(c) removing the micromachining area set by the focused ion beam and rotating the tip at an angle about the Z axis perpendicular to the plane;

(d) 일정각도 회전된 상태에서 새로운 미세가공 영역을 설정하는 단계와,(d) setting a new micromachining area in a state of being rotated at an angle;

360°회전이 될 때까지 (c)단계와 (d)단계를 반복하는 것을 특징으로 한다.(C) and (d) are repeated until the 360 ° rotation.

위와 같이 이루어진 본 발명은 최종적으로 형성될 팁의 끝각에 따라 틸트시켜 캔틸레버의 밑판이 손상받지 않도록 수차례 회전시키면서 연삭하여 팁의 끝각이 바늘모양이 되도록 가공함으로써 고에스펙트율을 갖는 팁을 부가적인 소프트웨어를 사용하지 않고 FIB장비를 통해 가공하게 된다.The present invention made as described above is tilted in accordance with the end angle of the tip to be finally formed by grinding while rotating several times so as not to damage the base plate of the cantilever by adding a tip having a high aspect ratio by processing the tip angle of the tip to the shape of a needle It is processed through FIB equipment without using software.

이하, 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 설명한다. 또한 본 실시예는 본 발명의 권리범위를 한정하는 것은 아니고, 단지 예시로 제시된 것이다.Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In addition, this embodiment is not intended to limit the scope of the present invention, but is presented by way of example only.

도 2는 집속이온빔 장비에서 미세가공하기 위해 캔틸레버 프로브 팁을 틸팅시킨 상태를 나타낸 도면이다.2 is a view illustrating a state in which the cantilever probe tip is tilted for microfabrication in the focused ion beam apparatus.

먼저, 캔틸레버 프로브 팁(10)을 가공하기 위해 집속이온빔 장비를 통한 미세가공의 용이성을 확보함과 동시에 팁의 보호를 위해 이온 코팅장치로 금을 약 500Å의 두께로 증착한다.First, in order to process the cantilever probe tip 10, gold is deposited to a thickness of about 500 kW with an ion coating device for the protection of the tip while ensuring ease of microprocessing through the focused ion beam equipment.

그런 다음 집속이온빔 장비에 팁(10)을 장착한 후 5㎀의 이온빔 전류로 팁(10)의 형상을 관찰한 후 집속이온빔 장비의 샘플 홀더에 위치한 시편의 수평을 맞춘다.Then, after mounting the tip 10 to the focused ion beam equipment, observe the shape of the tip 10 with an ion beam current of 5 후 and then level the specimen located in the sample holder of the focused ion beam equipment.

그런 다음 도 2에 도시된 바와 같이 최종적으로 구하고자 하는 캔틸레버 프로브 팁(10)의 끝각에 따라 1.5°∼ 6°범위로 틸팅시킨 후 미세가공 영역(20)을 설정한다.Then, as shown in FIG. 2, after tilting in the range of 1.5 ° to 6 ° according to the end angle of the cantilever probe tip 10 to be finally obtained, the micromachining region 20 is set.

이때 미세가공 영역은 캔틸레버의 밑판이 손상받지 않도록 팁의 재질에 따라 사전 실험을 통하여 설정한다.At this time, the micro-machining area is set through a preliminary experiment according to the material of the tip so that the bottom plate of the cantilever is not damaged.

그런 다음 미세가공 조건으로 가속전압 30㎸, 이온빔 전류 20㎀로 설정된 가공영역(20)을 약 1분간 연삭가공한다.Thereafter, the processing region 20, which is set to 30 kV of acceleration voltage and 20 kW of ion beam current, is ground for about 1 minute under micromachining conditions.

그런 다음, 집속이온장비에 장착된 캔틸레버 프로브 팁(10)을 틸팅된 평면에 수직한 Z축을 중심으로 90도씩 4회전 시켜가면서 설정된 미세가공영역을 제거하여끝부분이 바늘 모양인 팁을 가공하게 된다.Then, the cantilever probe tip 10 mounted on the focusing ion equipment is rotated 4 degrees by 90 degrees about the Z-axis perpendicular to the tilted plane to remove the set micromachining area, thereby processing the tip having a needle shape. .

이때 팁의 끝부분을 보다 정교하게 가공할 필요가 있을 경우에는 회전각도를 60도씩 6회전으로 하거나 45도씩 8회전 등으로 회전각도를 줄여서 팁의 끝부분을 정교하게 가공할 수 있다.At this time, if the tip of the tip needs to be processed more precisely, the end of the tip can be precisely machined by reducing the angle of rotation by six rotations of 60 degrees or by eight revolutions of 45 degrees.

도 3은 본 발명에 의해 가공된 탐침원자현미경의 캔틸레버 프로브 팁을 나타낸 도면이다.3 is a view showing the cantilever probe tip of the probe atomic force microscope processed by the present invention.

여기에서 보는 바와 같이 캔틸레버 프로브 팁(10)의 끝부분이 바늘 모양으로 연마되어 고에스펙트율을 갖는 팁이 형성된다.As shown here, the tip of the cantilever probe tip 10 is polished in the shape of a needle to form a tip having a high aspect ratio.

따라서, 본 발명에 의해 가공된 캔틸레버 프로브 팁을 장착한 탐침원자현미경으로 콘택이나 트렌치 구조의 반도체장치의 시편을 용이하게 분석할 수 있게 된다.Therefore, the probe atomic force microscope equipped with the cantilever probe tip processed by the present invention can easily analyze the specimen of the semiconductor device of the contact or trench structure.

상기한 바와 같이 본 발명은 일반적인 모양의 탐침원자현미경 캔틸레버 프로브 팁을 부가적인 소프트웨어의 사용없이 집속이온빔 장비를 이용하여 바늘타입으로 가공하여 고에스펙트율을 갖도록 함으로써 평면시편 뿐만 아니라 깊은 트렌치, 콘택홀 하부 등을 분석할 수 있는 이점이 있다.As described above, the present invention processes a probe atom microscope cantilever probe tip of a general shape into a needle type by using a focused ion beam apparatus without using additional software to have a high aspect ratio, thereby providing deep trenches and contact holes. There is an advantage to analyze the bottom and the like.

또한, 부가적인 소프트웨어를 사용하지 않고 고에스펙트율 팁을 가공함으로써 탐침원자현미경의 분석 영역의 확대 및 신규 소자 개발에 따른 공정의 평가 및 불량 분석에 적용가능하며 가공에 필요한 원가가 절감되는 이점이 있다.In addition, by processing the high aspect ratio tip without using additional software, it is applicable to the expansion of the analysis area of the probe atomic force microscope, the process evaluation and the defect analysis according to the development of new devices, and the cost required for processing is reduced. have.

Claims (5)

집속이온빔 장비를 사용하여 가공하는 탐침원자현미경의 캔틸레버 프로브 팁 가공 방법에 있어서,In the method of processing the cantilever probe tip of the probe atomic force microscope to be processed using a focused ion beam equipment, (a) 캔틸레버 프로브 팁에 일정두께의 금 이온을 코팅하는 단계와,(a) coating a predetermined thickness of gold ions on the cantilever probe tip, (b) 집속이온빔 장비에 캔틸레버 프로브 팁을 장착한 후 최종 구하고자 하는 팁의 끝각에 따라 틸트시켜 미세가공 영역을 설정하는 단계와,(b) mounting the cantilever probe tip to the focused ion beam apparatus and setting the micromachining area by tilting the tip according to the tip angle of the tip to be finally obtained; (c) 집속이온빔으로 설정된 미세가공 영역을 제거한 후 팁을 평면에 수직한 Z축을 중심으로 일정각도 회전시키는 단계와,(c) removing the micromachining area set by the focused ion beam and rotating the tip at an angle about the Z axis perpendicular to the plane; (d) 일정각도 회전된 상태에서 새로운 미세가공 영역을 설정하는 단계와,(d) setting a new micromachining area in a state of being rotated at an angle; 360°회전이 될 때까지 (c)단계와 (d)단계를 반복하는 것Repeating steps (c) and (d) until the rotation is 360 ° 을 특징으로 하는 탐침원자현미경의 캔틸레버 프로브 팁의 가공 방법.Method of processing the cantilever probe tip of the probe atomic force microscope, characterized in that. 제 1항에 있어서, 상기 (a)단계에서 금 이온은 500Å의 두께로 코팅하는 것을 특징으로 하는 탐침원자현미경의 캔틸레버 프로브 팁의 가공 방법.The method of claim 1, wherein in the step (a), the gold ions are coated with a thickness of 500 kPa. 제 1항에 있어서, 상기 (b)단계에서 틸팅각도는 최종 구하고자 하는 팁의 끝각에 따라 1.5°∼ 6°범위인 것을 특징으로 하는 탐침원자현미경의 캔틸레버 프로브 팁의 가공 방법.The method of claim 1, wherein the tilting angle in step (b) is in the range of 1.5 ° to 6 ° depending on the tip angle of the tip to be finally obtained. 제 1항에 있어서, 상기 (c)단계에서 집속이온빔 장비의 미세가공 조건은 가속전압 30㎸, 이온빔 전류 20㎀의 갈륨빔으로 1분간 진행하는 것을 특징으로 한 탐침원자현미경의 캔틸레버 프로브 팁의 가공 방법.The method of claim 1, wherein the microfabrication conditions of the focused ion beam equipment in step (c) is a gallium beam with an acceleration voltage of 30 kW and an ion beam current of 20 kW for 1 minute. Way. 제 1항에 있어서, 상기 (c)단계에서 팁의 끝부분 정밀도에 따라 90도 4회전, 60도 6회전, 45도 8회전 등으로 회전각도를 가변시켜 진행하는 것을 특징으로 하는 탐침원자현미경의 캔틸레버 프로브 팁의 가공 방법.The method according to claim 1, wherein in the step (c), the angle of rotation is varied according to the tip precision of the tip at 90 degrees 4 rotations, 60 degrees 6 rotations, 45 degrees 8 rotations, and the like. Method of machining cantilever probe tips.
KR1019990065593A 1999-12-30 1999-12-30 Method for milling cantilever probe tip of scanning probe microscope KR20010065673A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100793122B1 (en) * 2003-08-11 2008-01-10 도쿠리쓰교세이호징 가가쿠 기주쓰 신코 기코 Probe for probe microscope using transparent substrate, method of producing the same, and probe microscope device
US7494575B2 (en) * 2003-04-15 2009-02-24 Sii Nanotechnology Inc. Method for manufacturing a split probe

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7494575B2 (en) * 2003-04-15 2009-02-24 Sii Nanotechnology Inc. Method for manufacturing a split probe
KR100793122B1 (en) * 2003-08-11 2008-01-10 도쿠리쓰교세이호징 가가쿠 기주쓰 신코 기코 Probe for probe microscope using transparent substrate, method of producing the same, and probe microscope device

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