KR20010056655A - Apparatus for fabricating semiconductor devices - Google Patents

Apparatus for fabricating semiconductor devices Download PDF

Info

Publication number
KR20010056655A
KR20010056655A KR1019990058215A KR19990058215A KR20010056655A KR 20010056655 A KR20010056655 A KR 20010056655A KR 1019990058215 A KR1019990058215 A KR 1019990058215A KR 19990058215 A KR19990058215 A KR 19990058215A KR 20010056655 A KR20010056655 A KR 20010056655A
Authority
KR
South Korea
Prior art keywords
reactor
susceptor
plasma
relay
plasma electrode
Prior art date
Application number
KR1019990058215A
Other languages
Korean (ko)
Inventor
심경식
황철주
Original Assignee
황 철 주
주성엔지니어링(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 황 철 주, 주성엔지니어링(주) filed Critical 황 철 주
Priority to KR1019990058215A priority Critical patent/KR20010056655A/en
Publication of KR20010056655A publication Critical patent/KR20010056655A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: An apparatus for manufacturing semiconductor devices is provided to be capable of forming an optimum plasma atmosphere and also suitably cleaning every corner of the interior of a reactor using plasma. CONSTITUTION: An apparatus for manufacturing semiconductor devices includes a reactor electrically grounded, for providing a reaction space shielded from the outside. A susceptor(140) is located within the reactor so that it should not be electrically connected to the reactor and functions to seat wafers. A plasma electrode(130) is installed on the outside of the top of the reactor. A RF power supply source(170) is electrically connected to the susceptor and the plasma electrode, respectively, in order to supply RF power. A RF relay(180a) applies selectively or simultaneously the RF power from the RF power supply source to the susceptor or the plasma electrode.

Description

반도체 소자 제조 장치 {Apparatus for fabricating semiconductor devices}Apparatus for fabricating semiconductor devices

본 발명은 반도체 소자 제조 장치에 관한 것으로서, 특히 서셉터를 플라즈마 전극화한 반도체 소자 제조 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device manufacturing apparatus, and more particularly, to a semiconductor device manufacturing apparatus in which a susceptor is converted into plasma electrodes.

플라즈마를 이용하여 박막을 식각을 하거나 증착하는 반도체소자 제조 장치에는, 일반적으로 플라즈마전극이 한 곳에 고정되어 있다. 따라서, 공정마진이 작을 뿐만 아니라 박막증착 공정후에 플라즈마를 이용하여 반응기의 내부를 세정함에 있어서도 그 구석구석이 제대로 세정되지 아니한다. 따라서, 공정마진을 향상시키거나 반응기의 내부를 제대로 세정하기 위해서는 별도의 플라즈마전극을 구비해야 하는데 이는 비용의 상승요인이 되어 바람직하지 않다.In a semiconductor device manufacturing apparatus for etching or depositing a thin film using plasma, a plasma electrode is generally fixed to one place. Therefore, not only the process margin is small, but also every corner of the reactor is not properly cleaned even after cleaning the inside of the reactor using plasma after the thin film deposition process. Therefore, in order to improve the process margin or to properly clean the inside of the reactor, a separate plasma electrode should be provided, which is an increase in cost and is not preferable.

도 1은 종래의 반도체 소자 제조 장치를 설명하기 위한 개략도이다. 구체적으로, 외부와 차단된 반응공간을 제공하는 반응기는 챔버(10)와 그 상부를 덮는 석영돔(quartz dome, 20)으로 이루어진다. 여기서, 상기 챔버(10)는 접지되며, 상기 석영돔(20)의 외측에는 이를 둘러싸는 플라즈마전극(30)이 설치된다. 상기 플라즈마전극(30)은 RF 전력공급원(70)으로부터 RF 전력을 공급받는다.1 is a schematic view for explaining a conventional semiconductor device manufacturing apparatus. Specifically, the reactor providing a reaction space blocked from the outside consists of a quartz dome (quartz dome) 20 covering the chamber 10 and its top. Here, the chamber 10 is grounded, and the plasma electrode 30 surrounding the quartz dome 20 is installed. The plasma electrode 30 receives RF power from the RF power supply 70.

상기 챔버(10)내로 웨이퍼를 장입시키는 통로인 기판 이송관(60)은 상기 챔버(10)의 측벽에 설치되고, 장입된 웨이퍼(50)를 안착시키기 위한 서셉터(Susceptor, 40)는 상기 챔버(10)의 내부에 위치한다. 여기서, 상기 이송관(60)은 슬롯밸브(slot valve, 60a)에 의해 개폐된다. 그리고, 상기 서셉터(40)는 서셉터 이송수단(45)에 의해 상하로 이동시킬 수 있으며, 그 내부에는 상기 웨이퍼(50)를 가열하기 위한 히터(40a)가 설치되어 있다. 상기이송수단(45)은 상기 챔버(10)와 상기 서셉터(40)가 전기적으로 연결되지 않도록 절연물질로 이루어진다. 따라서, 상기 서셉터(40)는 전기적으로 플로팅(floating)된다. 상기 반응기내에 기체를 주입하거나 배출하기 위한 기체 주입구 및 기체 배기구는 도시를 생략하였다.The substrate transfer pipe 60, which is a passage for loading the wafer into the chamber 10, is installed on the sidewall of the chamber 10, and the susceptor 40 for seating the loaded wafer 50 is the chamber. It is located inside (10). Here, the transfer pipe 60 is opened and closed by a slot valve (60a). The susceptor 40 may be moved up and down by the susceptor transfer means 45, and a heater 40a for heating the wafer 50 is installed therein. The transfer means 45 is made of an insulating material so that the chamber 10 and the susceptor 40 are not electrically connected. Thus, the susceptor 40 is electrically floating. Gas inlets and gas exhaust ports for injecting or discharging gas into the reactor are not shown.

상술한 종래의 반도체 소자 제조장치에 의하면, 상기 플라즈마전극(30)이 상기 반응기의 상부에 고정되어 있으므로 효율적인 공정수행을 위한 최적의 플라즈마 분위기를 형성시키기가 어렵다. 뿐만 아니라, PECVD(plasma enhanced chemical vapor deposition) 공정후에 상기 반응기의 내벽에 원하지 않게 증착된 박막을 플라즈마를 이용하여 제거하고자 할 경우에도, 플라즈마가 상기 서셉터(40)의 하부에는 미치지 못하기 때문에 증착된 박막이 제대로 제거되지 않는다. 이렇게 상기 반응기의 내벽에 증착된 박막은 나중에 일부 박리되어 원하지 않는 미세입자(particle)가 발생하게 된다.According to the conventional semiconductor device manufacturing apparatus described above, since the plasma electrode 30 is fixed to the upper portion of the reactor, it is difficult to form an optimal plasma atmosphere for efficient process performance. In addition, even after the plasma enhanced chemical vapor deposition (PECVD) process to remove the undesired thin film deposited on the inner wall of the reactor by using a plasma, since the plasma does not reach the lower portion of the susceptor 40 is deposited Thin film is not removed properly. The thin film deposited on the inner wall of the reactor is later peeled off partly to generate unwanted fine particles.

따라서, 본 발명이 이루고자 하는 기술적 과제는 효율적인 공정수행을 위한 최적의 플라즈마 분위기를 형성시킬 수 있을 뿐만 아니라 플라즈마를 이용하여 반응기의 내부를 세정할 경우에 그 구석구석을 제대로 세정할 수 있는 반도체 소자 제조 장치를 제공하는 데 있다.Accordingly, the technical problem to be achieved by the present invention is not only to create an optimal plasma atmosphere for efficient process performance, but also to manufacture semiconductor devices capable of properly cleaning every corner of the reactor when the inside of the reactor is cleaned using plasma. To provide a device.

도 1은 종래의 반도체 소자 제조 장치를 설명하기 위한 개략도;1 is a schematic view for explaining a conventional semiconductor device manufacturing apparatus;

도 2는 본 발명에 따른 반도체 소자 제조 장치를 설명하기 위한 개략도이다.2 is a schematic view for explaining a semiconductor device manufacturing apparatus according to the present invention.

< 도면의 주요 부분에 대한 참조번호의 설명 ><Description of Reference Numbers for Main Parts of Drawings>

10, 110: 챔버 20, 120: 석영돔10, 110: chamber 20, 120: quartz dome

30, 130: 플라즈마전극 40, 140: 서셉터30, 130: plasma electrodes 40, 140: susceptor

40a, 140a: 히터 45, 145:서셉터 이송수단40a, 140a: heater 45, 145: susceptor transfer means

50, 150:웨이퍼 60, 160: 기판 이송관50, 150: wafer 60, 160: substrate transfer pipe

60a, 160a: 슬롯밸브 70, 170: RF 전력공급원60a, 160a: slot valve 70, 170: RF power supply

175: 매칭박스 180a: RF 계전기175: matching box 180a: RF relay

180b: 접지용 계전기180b: grounding relay

190a, 190b, 190c, 190d, 190e, 190f: 제1, 2, 3, 4, 5, 6 파워라인,190a, 190b, 190c, 190d, 190e, 190f: first, two, three, four, five, six power lines,

상기 기술적 과제를 달성하기 위한 본 발명의 실시예에 의하면, 본 발명은 외부와 차단된 반응공간을 제공하며 전기적으로 접지된 반응기와, 상기 반응기와 전기적으로 연결되지 않도록 상기 반응기내에 위치하며 웨이퍼가 안착되어지는 서셉터와, 상기 반응기의 상부 외측에 설치된 플라즈마전극과, 상기 서셉터와 플라즈마 전극에 RF 전력을 공급하기 위하여 이들과 각각 전기적으로 연결되는 RF 전력공급원과, 상기 RF 전력공급원에서 공급되는 RF 전력을 상기 서셉터 또는 플라즈마전극에 선택적으로 또는 동시에 인가시키기 위한 RF 계전기를 구비하는 것을 특징으로 하는 반도체 소자 제조장치를 제공한다.According to an embodiment of the present invention for achieving the above technical problem, the present invention provides a reaction space that is cut off from the outside and the electrically grounded reactor, the wafer is located in the reactor so as not to be electrically connected to the reactor and seated A susceptor to be provided, a plasma electrode provided at an upper outside of the reactor, an RF power source electrically connected to each of them to supply RF power to the susceptor and the plasma electrode, and an RF supplied from the RF power supply. Provided is a semiconductor device manufacturing apparatus comprising an RF relay for selectively or simultaneously applying power to the susceptor or plasma electrode.

본 발명에 따른 반도체 소자 제조장치는 상기 플라즈마전극과 반응기의 전기적 연결 여부를 결정하는 접지용 계전기를 더 구비하는 것을 특징으로 한다.Semiconductor device manufacturing apparatus according to the invention is characterized in that it further comprises a grounding relay for determining whether or not the electrical connection between the plasma electrode and the reactor.

여기서, 상기 RF 계전기가 상기 RF 전력공급원과 서셉터를 전기적으로 서로 차단시키고 상기 RF 전력공급원과 플라즈마전극은 전기적으로 서로 연결시킬 경우에, 상기 접지용 계전기는 상기 플라즈마전극과 반응기를 전기적으로 서로 차단시키도록 동작한다.Here, when the RF relay electrically disconnects the RF power supply and the susceptor from each other, and the RF power supply and the plasma electrode are electrically connected to each other, the grounding relay electrically blocks the plasma electrode and the reactor from each other. To work.

그리고, 상기 RF 계전기가 상기 RF 전력공급원과 플라즈마전극을 전기적으로 서로 차단시키고 상기 RF 전력공급원과 서셉터는 전기적으로 서로 연결시킬 경우에, 상기 접지용 계전기는 상기 플라즈마전극과 반응기를 전기적으로 서로 연결시키도록 동작한다.When the RF relay electrically disconnects the RF power supply and the plasma electrode from each other and the RF power supply and the susceptor are electrically connected to each other, the grounding relay electrically connects the plasma electrode and the reactor to each other. To work.

본 발명에 의하면, 상기 RF 전력공급원으로부터 공급되는 RF전력을 단지 상기 RF 계전기를 통하여 상기 서셉터와 상기 플라즈마전극에 선택적으로 인가할 수 있다. 따라서, 별도의 플라즈마전극을 새로 구비하지 않아도 특정의 공정에 대한 최적의 플라즈마 분위기를 용이하게 형성시킬 수 있다. 뿐만 아니라, 상기 플라즈마전극에 의해 발생된 플라즈마를 이용하여 PECVD 공정을 진행한 다음 상기 반응기의 내벽에 원하지 않게 증착된 박막을 플라즈마를 이용하여 제거하고자 할 경우, 상기 서셉터를 플라즈마전극으로 사용함으로써 상기 서셉터 부근의 세정을 효과적으로 할 수 있다.According to the present invention, RF power supplied from the RF power supply source can be selectively applied to the susceptor and the plasma electrode only through the RF relay. Therefore, it is possible to easily form the optimum plasma atmosphere for a specific process even without a new plasma electrode. In addition, when the PECVD process is performed by using the plasma generated by the plasma electrode, and then the undesired thin film deposited on the inner wall of the reactor is removed by using the plasma, the susceptor is used as the plasma electrode. The cleaning in the vicinity of the susceptor can be effectively performed.

또한, 상기 서셉터와 상기 플라즈마전극에 동시에 RF 전력을 인가시킬 수도 있으므로 HDP(high density plasma) 공정도 용이하게 할 수 있다.In addition, since the RF power may be simultaneously applied to the susceptor and the plasma electrode, a high density plasma (HDP) process may be facilitated.

이하, 본 발명의 바람직한 실시예를 첨부한 도면을 참조하여 상세히 설명한다.Hereinafter, with reference to the accompanying drawings, preferred embodiments of the present invention will be described in detail.

도 2는 본 발명에 따른 반도체 소자 제조 장치를 설명하기 위한 개략도이다. 구체적으로, 외부와 차단된 반응공간을 제공하는 반응기는 상부에 개구부를 갖는 챔버(110)와 그 개구부를 덮는 석영돔(120)으로 이루어진다. 여기서, 상기 챔버(110)는 전기적으로 접지되며, 상기 석영돔(120)의 외측에는 이를 둘러싸는 플라즈마전극(130)이 설치된다.2 is a schematic view for explaining a semiconductor device manufacturing apparatus according to the present invention. Specifically, the reactor providing a reaction space blocked from the outside consists of a chamber 110 having an opening at the top and a quartz dome 120 covering the opening. Here, the chamber 110 is electrically grounded, and a plasma electrode 130 surrounding the quartz dome 120 is installed on the outer side of the quartz dome 120.

상기 챔버(110) 내로 웨이퍼를 장입시키는 통로인 기판 이송관(160)은 상기 챔버(110)의 측벽에 설치되고, 장입된 웨이퍼(150)를 안착시키기 위한 서셉터(140)는 상기 챔버(110)의 내부에 위치한다. 여기서, 상기 이송관(160)은 슬롯 밸브(160a)에 의해 개폐된다. 그리고, 상기 서셉터(140)는 서셉터 이송수단(145)에의해 상하로 이동시킬 수 있으며, 그 내부에는 상기 웨이퍼(150)를 가열하기 위한 히터(140a)가 설치되어 있다. 상기 이송수단(145)은 상기 챔버(110)와 상기 서셉터(140)가 전기적으로 연결되지 않도록 절연물질, 예컨대 세라믹으로 이루어진다. 따라서, 상기 서셉터(140)는 전기적으로 플로팅(floating)된다. 상기 반응기내에 기체를 주입하거나 배출하기 위한 기체 주입구 및 기체 배기구는 도시를 생략하였다.The substrate transfer pipe 160, which is a passage for charging the wafer into the chamber 110, is installed on the sidewall of the chamber 110, and the susceptor 140 for seating the charged wafer 150 is the chamber 110. Is located inside). Here, the transfer pipe 160 is opened and closed by the slot valve (160a). The susceptor 140 may be moved up and down by the susceptor transfer means 145, and a heater 140a for heating the wafer 150 is installed therein. The transfer means 145 is made of an insulating material, for example, ceramic so that the chamber 110 and the susceptor 140 are not electrically connected. Thus, the susceptor 140 is electrically floating. Gas inlets and gas exhaust ports for injecting or discharging gas into the reactor are not shown.

RF 전력공급원(170)은 제1 파워라인(190a)을 통하여 매칭박스(matching box, 175)에 연결되며, 상기 매칭박스(175)는 제2 파워라인(190b)을 통하여 RF 계전기(180a)와 연결된다. 또한, 상기 RF 계전기(180a)는 제3 파워라인(190c) 및 제4 파워라인(190d)을 통하여 상기 서셉터(140) 및 상기 플라즈마전극(130)에 각각 연결된다. 상기 반응기(110)는 제5 파워라인(190e)에 의해 접지용 계전기(180b)와 연결되며, 상기 접지용 계전기(180b)는 제6 파워라인(190f)을 통하여 상기 제4 파워라인(190d)과 연결된다.The RF power supply 170 is connected to a matching box 175 through a first power line 190a, and the matching box 175 is connected to the RF relay 180a through a second power line 190b. Connected. In addition, the RF relay 180a is connected to the susceptor 140 and the plasma electrode 130 through a third power line 190c and a fourth power line 190d, respectively. The reactor 110 is connected to the grounding relay 180b by the fifth power line 190e, and the grounding relay 180b is connected to the fourth power line 190d through the sixth power line 190f. Connected with

상기 매칭박스(175)는 상기 제1 파워라인(190a)을 통하여 상기 RF 전력공급원(170)으로부터 공급되는 RF 전력을 그 반사율이 최소가 되도록 매칭(matching)시킨 후 상기 제2 파워라인(190b)을 통하여 상기 RF 계전기(180a)에 공급한다.The matching box 175 matches the RF power supplied from the RF power supply 170 through the first power line 190a such that its reflectance is minimized, and then the second power line 190b. It supplies to the RF relay 180a through.

상기 RF 계전기(180a)는 외부전압신호, 예컨대 24V가 입력되지 않을 때에는 상기 플라즈마전극(130)에만 RF 전력이 인가되도록 상기 제2 파워라인(190b)과 상기 제4 파워라인(190d)만을 서로 연결시킨다. 이 때, 상기 외부전압신호는 상기 접지용 계전기(180b)에도 동시에 입력되며 이러한 신호를 입력받은 상기 접지용 계전기(180b)는 상기 제5 파워라인(190e)과 상기 제6 파워라인(190f)을 서로 차단시킨다. 따라서, 이 경우 상기 서셉터(140)는 플로팅되고 상기 챔버(110)는 접지된 상태에서, 상기 플라즈마전극(130)에 인가되는 RF 전력에 의해서 상기 반응기내에 플라즈마가 형성되어진다.The RF relay 180a connects only the second power line 190b and the fourth power line 190d to each other such that RF power is applied only to the plasma electrode 130 when an external voltage signal, for example, 24V is not input. Let's do it. At this time, the external voltage signal is simultaneously input to the grounding relay 180b, and the grounding relay 180b receiving the signal receives the fifth power line 190e and the sixth power line 190f. Block each other. Therefore, in this case, while the susceptor 140 is floated and the chamber 110 is grounded, plasma is formed in the reactor by RF power applied to the plasma electrode 130.

상기 RF 계전기(180a)에 상기 외부전압신호가 입력될 때에는 상기 RF 계전기(180a)는 상기 서셉터(140)에만 RF 전력이 인가되도록 상기 제2 파워라인(190b)과 상기 제3 파워라인(190c)만을 연결시킨다. 이 때, 상기 외부전압신호는 상기 접지용 계전기(180b)에도 동시에 입력되며 이러한 신호를 입력받은 상기 접지용 계전기(180b)는 상기 제5 파워라인(190e)과 상기 제6 파워라인(190f)을 서로 연결시킨다. 따라서, 이 경우 상기 플라즈마전극(130)과 상기 챔버(110)는 접지된 상태에서, 상기 서셉터(140)에 인가된 RF 전력에 의해서 상기 반응기내에 플라즈마가 형성되어진다.When the external voltage signal is input to the RF relay 180a, the RF relay 180a may apply the second power line 190b and the third power line 190c to apply RF power only to the susceptor 140. ) Only. At this time, the external voltage signal is simultaneously input to the grounding relay 180b, and the grounding relay 180b receiving the signal receives the fifth power line 190e and the sixth power line 190f. Connect to each other. Therefore, in this case, plasma is formed in the reactor by RF power applied to the susceptor 140 while the plasma electrode 130 and the chamber 110 are grounded.

상기 RF 계전기(180a)는 상기 서셉터(140)와 상기 플라즈마전극(130)에 선택적으로 RF 전력이 인가되도록 동작하는 것 이외에, 위에서 설명하지는 않았지만 상기 서셉터(140)와 상기 플라즈마전극(130)에 동시에 RF 전력이 인가되도록 상기 제2 파워라인(190b)을 상기 제3 파워라인(190c) 및 제4 파워라인(190d)에 동시에 연결시킬 수도 있다.Although not described above, the RF relay 180a operates to selectively apply RF power to the susceptor 140 and the plasma electrode 130, but the susceptor 140 and the plasma electrode 130 are not described above. The second power line 190b may be simultaneously connected to the third power line 190c and the fourth power line 190d to simultaneously apply RF power to the third power line 190c.

상술한 바와 같은 본 발명의 실시예에 의하면, 상기 RF 전력공급원(170)으로부터 공급되는 RF전력을 단지 상기 RF 계전기(180a)를 통하여 상기 서셉터(140)와 상기 플라즈마전극(130)에 선택적으로 인가할 수 있다. 따라서, 별도의 플라즈마전극을 새로 구비하지 않아도 특정의 공정에 대한 최적의 플라즈마 분위기를 용이하게 형성시킬 수 있다. 뿐만 아니라, 상기 플라즈마전극(130)에 의해 발생된 플라즈마를 이용하여 PECVD 공정을 진행한 다음 상기 반응기의 내벽에 원하지 않게 증착된 박막을 플라즈마를 이용하여 제거하고자 할 경우, 상기 서셉터(140)를 플라즈마전극으로 사용함으로써 상기 서셉터(140)부근의 세정을 효과적으로 할 수 있다.According to the embodiment of the present invention as described above, the RF power supplied from the RF power supply 170 is selectively supplied to the susceptor 140 and the plasma electrode 130 only through the RF relay 180a. Can be authorized. Therefore, it is possible to easily form the optimum plasma atmosphere for a specific process even without a new plasma electrode. In addition, when the PECVD process is performed using the plasma generated by the plasma electrode 130, and then the undesired thin film deposited on the inner wall of the reactor is removed using plasma, the susceptor 140 may be removed. By using the plasma electrode, it is possible to effectively clean the vicinity of the susceptor 140.

또한, 상기 서셉터(140)와 상기 플라즈마전극(130)에 동시에 RF 전력을 인가시킬 수도 있으므로 HDP(high density plasma) 공정도 용이하게 할 수 있다.In addition, since the RF power may be simultaneously applied to the susceptor 140 and the plasma electrode 130, a high density plasma (HDP) process may be facilitated.

본 발명은 상기 실시예에만 한정되지 않으며, 본 발명의 기술적 사상 내에서 당 분야에서 통상의 지식을 가진 자에 의해 많은 변형이 가능함은 명백하다.The present invention is not limited to the above embodiments, and it is apparent that many modifications are possible by those skilled in the art within the technical spirit of the present invention.

Claims (5)

외부와 차단된 반응공간을 제공하며 전기적으로 접지된 반응기;An electrically grounded reactor that provides a reaction space isolated from the outside; 상기 반응기와 전기적으로 연결되지 않도록 상기 반응기내에 위치하며 웨이퍼가 안착되어지는 서셉터;A susceptor located in the reactor so as not to be electrically connected to the reactor and having a wafer seated thereon; 상기 반응기의 상부 외측에 설치된 플라즈마전극;A plasma electrode installed outside the upper portion of the reactor; 상기 서셉터와 플라즈마 전극에 RF 전력을 공급하기 위하여 이들과 각각 전기적으로 연결되는 RF 전력공급원; 및An RF power supply electrically connected to each of the susceptors and the plasma electrodes to supply RF power; And 상기 RF 전력공급원에서 공급되는 RF 전력을 상기 서셉터 또는 플라즈마전극에 선택적으로 또는 동시에 인가시키기 위한 RF 계전기를 구비하는 것을 특징으로 하는 반도체 소자 제조 장치.And an RF relay for selectively or simultaneously applying the RF power supplied from the RF power supply source to the susceptor or the plasma electrode. 제 1항에 있어서, 상기 플라즈마전극과 반응기의 전기적 연결 여부를 결정하는 접지용 계전기를 더 구비하는 것을 특징으로 하는 반도체 소자 제조 장치.The semiconductor device manufacturing apparatus of claim 1, further comprising a grounding relay configured to determine whether the plasma electrode and the reactor are electrically connected to each other. 제 2항에 있어서, 상기 RF 계전기가 상기 RF 전력공급원과 서셉터를 전기적으로 서로 차단시키고 상기 RF 전력공급원과 플라즈마전극은 전기적으로 서로 연결시킬 경우에, 상기 접지용 계전기는 상기 플라즈마전극과 반응기를 전기적으로 서로 차단시키도록 동작하는 것을 특징으로 하는 플라즈마 처리장치.3. The grounding relay of claim 2, wherein the RF relay electrically disconnects the RF power supply and the susceptor from each other and the RF power supply and the plasma electrode are electrically connected to each other. Plasma processing apparatus characterized in that it is operable to electrically disconnect from each other. 제 2항에 있어서, 상기 RF 계전기가 상기 RF 전력공급원과 플라즈마전극을 전기적으로 서로 차단시키고 상기 RF 전력공급원과 서셉터는 전기적으로 서로 연결시킬 경우에, 상기 접지용 계전기는 상기 플라즈마전극과 반응기를 전기적으로 서로 연결시키도록 동작하는 것을 특징으로 하는 플라즈마 처리장치.3. The grounding relay of claim 2, wherein the RF relay electrically disconnects the RF power supply and the plasma electrode from each other, and the RF power supply and the susceptor are electrically connected to each other. Plasma processing apparatus, operative to electrically connect with each other. 제 3항 또는 제 4항에 있어서, 상기 RF 계전기와 접지용 계전기가 동일한 외부전압신호를 동시에 입력신호로 받아 동작하는 것을 특징으로 하는 플라즈마 처리장치.The plasma processing apparatus according to claim 3 or 4, wherein the RF relay and the grounding relay receive the same external voltage signal simultaneously as an input signal.
KR1019990058215A 1999-12-16 1999-12-16 Apparatus for fabricating semiconductor devices KR20010056655A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019990058215A KR20010056655A (en) 1999-12-16 1999-12-16 Apparatus for fabricating semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990058215A KR20010056655A (en) 1999-12-16 1999-12-16 Apparatus for fabricating semiconductor devices

Publications (1)

Publication Number Publication Date
KR20010056655A true KR20010056655A (en) 2001-07-04

Family

ID=19626289

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990058215A KR20010056655A (en) 1999-12-16 1999-12-16 Apparatus for fabricating semiconductor devices

Country Status (1)

Country Link
KR (1) KR20010056655A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007123347A1 (en) * 2006-04-21 2007-11-01 New Power Plasma Co., Ltd. Plasma processing system and a method of controlling the same
KR100980521B1 (en) * 2007-01-29 2010-09-06 도쿄엘렉트론가부시키가이샤 Plasma processing apparatus, plasma processing method and storage medium
KR101411385B1 (en) * 2013-12-17 2014-06-25 주성엔지니어링(주) Substrate supporting plate and apparatus for depositing thin film having the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5464499A (en) * 1992-06-24 1995-11-07 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
US5597438A (en) * 1995-09-14 1997-01-28 Siemens Aktiengesellschaft Etch chamber having three independently controlled electrodes
US5671119A (en) * 1996-03-22 1997-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Process for cleaning an electrostatic chuck of a plasma etching apparatus
US5817534A (en) * 1995-12-04 1998-10-06 Applied Materials, Inc. RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers
JPH11149994A (en) * 1997-08-04 1999-06-02 Tokyo Electron Yamanashi Ltd Plasma treating method

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5464499A (en) * 1992-06-24 1995-11-07 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
US5597438A (en) * 1995-09-14 1997-01-28 Siemens Aktiengesellschaft Etch chamber having three independently controlled electrodes
US5817534A (en) * 1995-12-04 1998-10-06 Applied Materials, Inc. RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers
US5671119A (en) * 1996-03-22 1997-09-23 Taiwan Semiconductor Manufacturing Company, Ltd. Process for cleaning an electrostatic chuck of a plasma etching apparatus
JPH11149994A (en) * 1997-08-04 1999-06-02 Tokyo Electron Yamanashi Ltd Plasma treating method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007123347A1 (en) * 2006-04-21 2007-11-01 New Power Plasma Co., Ltd. Plasma processing system and a method of controlling the same
KR100980521B1 (en) * 2007-01-29 2010-09-06 도쿄엘렉트론가부시키가이샤 Plasma processing apparatus, plasma processing method and storage medium
KR101411385B1 (en) * 2013-12-17 2014-06-25 주성엔지니어링(주) Substrate supporting plate and apparatus for depositing thin film having the same

Similar Documents

Publication Publication Date Title
US6178918B1 (en) Plasma enhanced chemical processing reactor
US8336488B2 (en) Multi-station plasma reactor with multiple plasma regions
US5895530A (en) Method and apparatus for directing fluid through a semiconductor processing chamber
KR101111556B1 (en) Dual-chamber plasma processing apparatus
EP0658918B1 (en) Plasma processing apparatus
JP5279656B2 (en) Plasma processing equipment
US5882414A (en) Method and apparatus for self-cleaning a blocker plate
US20020078893A1 (en) Plasma enhanced chemical processing reactor and method
US20100048022A1 (en) Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
KR19990067742A (en) Plasma cvd device
US20080305275A1 (en) CVD system and substrate cleaning method
JP4114972B2 (en) Substrate processing equipment
TW201729649A (en) Plasma processing method
JPH07312348A (en) Method and apparatus for treatment
KR20200103556A (en) Stage and substrate processing apparatus
KR101089391B1 (en) Multi wafer processing chamber
KR20010056655A (en) Apparatus for fabricating semiconductor devices
TWI787239B (en) Method and apparatus for etching organic materials
WO2019156489A1 (en) Chamber cleaning device and chamber cleaning method
JP2990551B2 (en) Film processing equipment
US11887824B2 (en) Method of cleaning plasma processing apparatus and plasma processing apparatus
KR100415435B1 (en) Apparatus for fabricating semiconductor devices
KR20110047085A (en) Multi wafer processing chamber
JPH09213683A (en) Plasma etching device
US20070221332A1 (en) Plasma processing apparatus

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application